WO2007101099A3 - High-throughput printing of chalcogen layer and the use of an inter-metallic material - Google Patents
High-throughput printing of chalcogen layer and the use of an inter-metallic material Download PDFInfo
- Publication number
- WO2007101099A3 WO2007101099A3 PCT/US2007/062694 US2007062694W WO2007101099A3 WO 2007101099 A3 WO2007101099 A3 WO 2007101099A3 US 2007062694 W US2007062694 W US 2007062694W WO 2007101099 A3 WO2007101099 A3 WO 2007101099A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- iiia
- chalcogen
- elements
- particles
- Prior art date
Links
- 229910052798 chalcogen Inorganic materials 0.000 title abstract 6
- 150000001787 chalcogens Chemical class 0.000 title abstract 6
- 229910000765 intermetallic Inorganic materials 0.000 title abstract 2
- 239000007769 metal material Substances 0.000 title 1
- 239000002243 precursor Substances 0.000 abstract 6
- 239000002245 particle Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000905 alloy phase Inorganic materials 0.000 abstract 1
- 150000004770 chalcogenides Chemical class 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001995 intermetallic alloy Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000013528 metallic particle Substances 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
- C23C18/127—Preformed particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008556559A JP2009528680A (en) | 2006-02-23 | 2007-02-23 | High-throughput printing of chalcogen layers and the use of intermetallic materials |
CN2007800146270A CN101443892B (en) | 2006-02-23 | 2007-02-23 | High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material |
EP07757400A EP1992010A2 (en) | 2006-02-23 | 2007-02-23 | High-throughput printing of chalcogen layer and the use of an inter-metallic material |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/361,522 US20070166453A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of chalcogen layer |
US11/361,522 | 2006-02-23 | ||
US11/395,438 | 2006-03-30 | ||
US11/395,438 US20070163643A1 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of chalcogen layer and the use of an inter-metallic material |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007101099A2 WO2007101099A2 (en) | 2007-09-07 |
WO2007101099A3 true WO2007101099A3 (en) | 2007-11-22 |
Family
ID=38459748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/062694 WO2007101099A2 (en) | 2006-02-23 | 2007-02-23 | High-throughput printing of chalcogen layer and the use of an inter-metallic material |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1992010A2 (en) |
JP (1) | JP2009528680A (en) |
CN (1) | CN101443892B (en) |
WO (1) | WO2007101099A2 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5738601B2 (en) * | 2008-03-05 | 2015-06-24 | ハナジー・ハイ−テク・パワー・(エイチケー)・リミテッド | Buffer layer deposition for thin film solar cells. |
US8277869B2 (en) * | 2008-03-05 | 2012-10-02 | Global Solar Energy, Inc. | Heating for buffer layer deposition |
US20100087015A1 (en) | 2008-03-05 | 2010-04-08 | Global Solar Energy, Inc. | Feedback for buffer layer deposition |
JP4540724B2 (en) * | 2008-05-20 | 2010-09-08 | 昭和シェル石油株式会社 | CIS type thin film solar cell manufacturing method |
JP5192990B2 (en) * | 2008-11-11 | 2013-05-08 | 光洋應用材料科技股▲分▼有限公司 | Copper-gallium alloy sputtering target, method for producing the sputtering target, and related applications |
JP2011023520A (en) * | 2009-07-15 | 2011-02-03 | Panasonic Electric Works Co Ltd | P-type semiconductor film and solar cell |
CN102046836B (en) * | 2009-07-27 | 2012-10-03 | Jx日矿日石金属株式会社 | Sintered Cu-Ga sputtering target and method for producing the target |
US8308973B2 (en) * | 2009-07-27 | 2012-11-13 | Rohm And Haas Electronic Materials Llc | Dichalcogenide selenium ink and methods of making and using same |
JP5973913B2 (en) * | 2009-09-08 | 2016-08-23 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Imaging measurement system with printed photodetector array |
JP5639816B2 (en) * | 2009-09-08 | 2014-12-10 | 東京応化工業株式会社 | Coating method and coating apparatus |
US20110076798A1 (en) * | 2009-09-28 | 2011-03-31 | Rohm And Haas Electronic Materials Llc | Dichalcogenide ink containing selenium and methods of making and using same |
JP5782672B2 (en) * | 2009-11-06 | 2015-09-24 | 凸版印刷株式会社 | COMPOUND SEMICONDUCTOR THIN FILM INK |
KR101271753B1 (en) | 2009-11-20 | 2013-06-05 | 한국전자통신연구원 | Manufacturing method for thin film type absorber layer, manufacturing method for thin film solar cell using thereof and thin film solar cell |
JP2011165790A (en) * | 2010-02-08 | 2011-08-25 | Fujifilm Corp | Solar cell and method of manufacturing the same |
CN101826574A (en) * | 2010-02-10 | 2010-09-08 | 昆山正富机械工业有限公司 | Method for making copper-indium-gallium-selenium light-absorbing layer under non-vacuum condition |
CN101853885A (en) * | 2010-02-10 | 2010-10-06 | 昆山正富机械工业有限公司 | Manufacturing method of slurry of solar absorbing layer, slurry and absorbing layer |
CN101818375A (en) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process |
CN101820025A (en) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process |
CN101820032A (en) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | Method for manufacturing light absorption layer by collocating CuInGaSe slurry under non-vacuum environment |
CN101789470A (en) * | 2010-02-12 | 2010-07-28 | 昆山正富机械工业有限公司 | Method for fabricating CuInGaSe absorbed layer in antivacuum way |
US8709917B2 (en) * | 2010-05-18 | 2014-04-29 | Rohm And Haas Electronic Materials Llc | Selenium/group 3A ink and methods of making and using same |
CN101937943A (en) * | 2010-08-30 | 2011-01-05 | 浙江尚越光电科技有限公司 | Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution |
CN101944556A (en) * | 2010-09-17 | 2011-01-12 | 浙江尚越光电科技有限公司 | Preparation method of high-uniformity copper-indium-gallium-selenium (CIGS) absorbed layer |
WO2012043242A1 (en) * | 2010-09-29 | 2012-04-05 | 京セラ株式会社 | Photoelectric conversion device and method for manufacturing photoelectric conversion device |
EP2660871A1 (en) * | 2010-12-27 | 2013-11-06 | Toppan Printing Co., Ltd. | Compound semiconductor thin film solar cell, and process for production thereof |
CN102569514B (en) * | 2012-01-04 | 2014-07-30 | 中国科学院合肥物质科学研究院 | Method for preparing copper indium gallium selenide solar cell optical absorption layer |
WO2013106836A1 (en) * | 2012-01-13 | 2013-07-18 | The Regents Of The University Of California | Metal-chalcogenide photovoltaic device with metal-oxide nanoparticle window layer |
EP2647595A2 (en) * | 2012-04-03 | 2013-10-09 | Neo Solar Power Corp. | Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same |
CN103915516B (en) * | 2013-01-07 | 2016-05-18 | 厦门神科太阳能有限公司 | A kind of sodium doping method of CIGS base film photovoltaic material |
JP6126867B2 (en) * | 2013-02-25 | 2017-05-10 | 東京応化工業株式会社 | Coating apparatus and coating method |
CN107078180B (en) * | 2014-02-14 | 2020-12-11 | 新南创新有限公司 | Photovoltaic cell and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040219730A1 (en) * | 2001-04-16 | 2004-11-04 | Basol Bulent M. | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
US20050183768A1 (en) * | 2004-02-19 | 2005-08-25 | Nanosolar, Inc. | Photovoltaic thin-film cell produced from metallic blend using high-temperature printing |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0743686A3 (en) * | 1995-05-15 | 1998-12-02 | Matsushita Electric Industrial Co., Ltd | Precursor for semiconductor thin films and method for producing semiconductor thin films |
US6268014B1 (en) * | 1997-10-02 | 2001-07-31 | Chris Eberspacher | Method for forming solar cell materials from particulars |
US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
AU2249201A (en) * | 1999-11-16 | 2001-05-30 | Midwest Research Institute | A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2 |
EP1556902A4 (en) * | 2002-09-30 | 2009-07-29 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
CN101894881A (en) * | 2004-03-15 | 2010-11-24 | 索罗能源公司 | Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton |
-
2007
- 2007-02-23 CN CN2007800146270A patent/CN101443892B/en not_active Expired - Fee Related
- 2007-02-23 JP JP2008556559A patent/JP2009528680A/en active Pending
- 2007-02-23 WO PCT/US2007/062694 patent/WO2007101099A2/en active Application Filing
- 2007-02-23 EP EP07757400A patent/EP1992010A2/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040219730A1 (en) * | 2001-04-16 | 2004-11-04 | Basol Bulent M. | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
US20050183768A1 (en) * | 2004-02-19 | 2005-08-25 | Nanosolar, Inc. | Photovoltaic thin-film cell produced from metallic blend using high-temperature printing |
Also Published As
Publication number | Publication date |
---|---|
EP1992010A2 (en) | 2008-11-19 |
CN101443892A (en) | 2009-05-27 |
WO2007101099A2 (en) | 2007-09-07 |
JP2009528680A (en) | 2009-08-06 |
CN101443892B (en) | 2013-05-01 |
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