CN101820025A - Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process - Google Patents
Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process Download PDFInfo
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Abstract
The invention relates to a method for preparing a copper-indium-gallium-selenium(sulfur) light absorption layer by adopting a non-vacuum process. The method comprises the following steps of: in a formula ratio, blending two component powder, three component powder or four component powder which is of different particle size and contains IB, IIIA and VIA group elements to obtain copper-indium-gallium-selenium(sulfur)-containing mixed powder, wherein the average particle size of the small-size particles is less than 30 percent of the average particle size of the small-size particles; adding a solvent into the copper-indium-gallium-selenium(sulfur)-containing mixed powder; coating the copper-indium-gallium-selenium(sulfur)-containing pulp on a lower electrode-containing substrate by a non-vacuum coating method, obtaining a copper-indium-gallium-selenium(sulfur)-containing light absorption precursor layer by soft-baking; and putting the copper-indium-gallium-selenium(sulfur)-containing light absorption precursor layer in a high-temperature RTA furnace containing VIA group element powder for growing crystals, and obtaining the copper-indium-gallium-selenium(sulfur) light absorption layer. The method can improve the compactness of the coated film, and because a selenization method is not adopted, the use of the dangerous hydrogen selenide is avoided.
Description
Technical field
The present invention relates to a kind of method of light absorbing zone, particularly relate to a kind of method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process.
Background technology
In recent years, the new line of and environmental consciousness surging with international oil price, green energy resource has become the new forms of energy main flow, wherein solar cell is again because of taking from the stable radiant energy of the sun, the source can be inexhausted, and therefore more various countries pay attention to draw from one to make good the deficits of another invariably a large amount of development costs and subsidies granted for policy considerations, to foster local solar cell industry, make that the development of global solar industry is very quick.
First generation solar modules comprises the solar modules of monocrystalline silicon and polysilicon, though photoelectric conversion efficiency height and volume production technology maturation, because the material cost height, and Silicon Wafer influences follow-up volume production scale often because of the demand source of goods deficiency of semi-conductor industry.Therefore, comprise (CIGSS) the thin film solar module of the second generation of film and Cadimium telluride thin film of amorphous silicon membrane, Copper Indium Gallium Selenide (CIGS) film or Copper Indium Gallium Selenide (sulphur), in development and ripe gradually in recent years, wherein, therefore come into one's own especially again with the conversion efficiency of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) solar cell the highest (element cell can up to 20% module about 14%).
Consult Fig. 1, the schematic diagram of existing located by prior art Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) solar battery structure.As shown in Figure 1; the copper indium gallium selenium solar cell structure of existing located by prior art comprises substrate 10; first conductive layer 20; Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer 30; resilient coating 40; the insulating barrier 50 and second conductive layer 60; wherein substrate 10 can be glass plate; aluminium sheet; Stainless Steel plate or plastic plate; first conductive layer 20 generally comprises metal molybdenum; be used as backplate; Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer 30 comprises the copper of proper proportion; indium; gallium and selenium; be used as p type film; be main light absorbed layer; resilient coating 40 can comprise cadmium sulfide (CdS); be used as n type film; insulating barrier 50 comprises zinc oxide (ZnO); in order to protection to be provided, second conductive layer 60 comprises zinc oxide aluminum (ZnO:Al), in order to connect front electrode.
The manufacture method of above-mentioned Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) solar cell mainly is divided into vacuum process and antivacuum processing procedure according to the manufacturing environment of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer.Vacuum process comprises sputtering method or vapour deposition method, and shortcoming is that cost of investment is higher and stock utilization is lower, so the integral manufacturing cost is higher.Antivacuum processing procedure comprises print process or electrodeposition process, and shortcoming is that technology is still immature, does not still have the larger area commercial prod.But antivacuum processing procedure still has the advantage that manufacturing equipment is simple and process conditions is reached easily, and suitable business potential is arranged.
The antivacuum processing procedure of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer is to allocate Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry or ink (Ink) earlier, in order to be applied on the molybdenum layer.
In the existing located by prior art, Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry preparation mixes with proper proportion earlier and contains IB, two compositions of IIIA and VIA family element, the powder of three compositions or four compositions is to form the original powder that contains Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur), add the solvent of proper proportion again, and stir to form original Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry, add solid (binder) or interfacial agent then property at last, and mix to form last Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry with raising Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer and molybdenum backplate.
Select for use the how ground rice end of two compositions, three compositions or four compositions of single average grain diameter IB, IIIA and VIA family element can make particle and intergranular hole big, reduce the compactness of film, therefore need to use different average grain diameters how the problems referred to above are improved at the ground rice end, to increase the compactness of coating caudacoria.
The shortcoming of above-mentioned existing located by prior art is, the slurry that configures is in the RTA process, can be because the selenium volatilization, cause the original scale of IB/IIIA/VIA in Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer to change too greatly, influence the optical absorption characteristics of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer, severe patient can cause this light absorbing zone to be varied to the N layer from the P layer, formed solar cell can lose the characteristic of battery, be the selenium of replenish lost in the past, can use the selenizing processing procedure, promptly use highly toxic hydrogen selenide gas, with the selenium composition of replenish lost, but highly toxic hydrogen selenide gas one can cause fatal danger slightly accidentally.Therefore, need a kind of danger lower, the light absorbing zone manufacture method that can replenish VI family composition again is to improve the problem of above-mentioned existing located by prior art.
This shows that the method for above-mentioned existing light absorbing zone obviously still has inconvenience and defective, and demands urgently further being improved in method and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but does not see always that for a long time appropriate method can address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new method with adopting non-vacuum process making Copper Indium Gallium Selenide (sulphur) light absorbing zone, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that the method for above-mentioned existing light absorbing zone exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new method with adopting non-vacuum process making Copper Indium Gallium Selenide (sulphur) light absorbing zone, can improve the method for general existing light absorbing zone, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present invention is, overcome the defective of the method existence of existing light absorbing zone, and a kind of new method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process is provided, technical problem to be solved is to use the copper-indium-gallium-selenium compound of different-grain diameter and normal ratio to be made into slurry, and in the RTA process, add VIA family powder, the loss that the VIA family volatilization of additional Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) precursor layer is caused is very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process that the present invention proposes, in order to form even light absorbing zone on antivacuum next molybdenum layer, it may further comprise the steps:
(1) at first, according to formula rate, allocate two compositions, three compositions or the four composition powder that different average grain diameters contain IB, IIIA and VIA family element and contain Copper Indium Gallium Selenide (sulphur) mixed-powder with formation, wherein the small sized particles average grain diameter is below 30% of a large scale average grain diameter;
Secondly (2) add solvent, NaI and interfacial agent and stir to form and contain Copper Indium Gallium Selenide (sulphur) slurry containing Copper Indium Gallium Selenide (sulphur) mixed-powder;
(3) then will contain Copper Indium Gallium Selenide (sulphur) slurry is coated on the substrate that contains bottom electrode with antivacuum rubbing method;
(4) pass through soft roasting removal solvent contains Copper Indium Gallium Selenide (sulphur) with formation light-absorbing precursor layer again;
(5) will contain the light-absorbing precursor layer of Copper Indium Gallium Selenide (sulphur) at last, and place the high temperature RTA stove that contains VIA family element powders long brilliant, finish the making of Copper Indium Gallium Selenide (sulphur) light absorbing zone.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said formula rate refers to IB: IIIA: the not ear ratio=0.9-1.0 of VI element: 1.0: 2.0.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said IB family element comprises copper.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said IIIA family element comprises indium or gallium or indium gallium composite material.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said VIA family element is selenium or sulphur or selenium sulphur composite material.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, the average grain diameter powder of wherein said large-size particle powder is between 5-500nm.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone, wherein said solvent with adopting non-vacuum process comprise alcohols, ethers, ketone or mix described more than two kinds solvent at least one of them.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said antivacuum rubbing method comprises electrodeposition process, scraper rubbing method, slot coated method, wire mark method or ultrasonic waves rubbing method.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone, wherein said VIA family element powders with adopting non-vacuum process be selenium powder, sulphur powder or selenium sulphur mixed-powder one of them.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, temperature is between 400-800 ℃ in the wherein said high temperature RTA stove.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above,, the invention provides a kind of method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone, in order on antivacuum next molybdenum layer, to form even light absorbing zone with adopting non-vacuum process for achieving the above object.When the present invention mainly utilizes allotment Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry, use the copper-indium-gallium-selenium compound of different-grain diameter and normal ratio to be made into slurry, after coating forms the light precursor layer, in the RTA process, add VIA family powder, make VIA family powder high temperature form steam, the loss that the VIA family volatilization of additional Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) precursor layer is caused.
By technique scheme, the method that the present invention makes Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process has following advantage and beneficial effect at least:
1, the present invention improves the compactness of coating caudacoria.
2, the present invention does not use the selenizing method, avoids using dangerous hydrogen selenide.
In sum, the invention relates to a kind of method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, obvious improvement is arranged technically, have tangible good effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the schematic diagram of prior art Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) solar battery structure.
Fig. 2 is the manufacturing process schematic diagram of Copper Indium Gallium Selenide of the present invention or Copper Indium Gallium Selenide (sulphur) solar cell light absorption layer.
10: substrate
20: the first conductive layers
30: Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer
40: resilient coating
50: insulating barrier
60: the second conductive layers
S210-S250: manufacturing step
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of method, method, step, feature and the effect thereof of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process that foundation the present invention proposes, describe in detail as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can clearly present in the following detailed description that cooperates with reference to graphic preferred embodiment.For convenience of description, in following embodiment, components identical is represented with identical numbering.
See also shown in Figure 2, the method for making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process of preferred embodiment of the present invention, it mainly may further comprise the steps:
Step S210, elder generation's computation requirement Copper Indium Gallium Selenide or Cu-In-Ga-Se-S formula rate, allocate two compositions, three compositions or the four composition powder that different average grain diameters contain IB, IIIA and VIA family element and contain Copper Indium Gallium Selenide (sulphur) mixed-powder with formation, wherein the small sized particles average grain diameter is below 30% of a large scale average grain diameter;
Secondly step S220 adds solvent, NaI and interfacial agent and stirs to form and contain Copper Indium Gallium Selenide (sulphur) slurry containing Copper Indium Gallium Selenide (sulphur) mixed-powder;
Step S230 then will contain Copper Indium Gallium Selenide (sulphur) slurry and be coated on the substrate that contains bottom electrode with antivacuum rubbing method;
Step S240, the soft roasting removal solvent of process contains the light-absorbing precursor layer of Copper Indium Gallium Selenide (sulphur) with formation again;
Step S250 will contain the light-absorbing precursor layer of Copper Indium Gallium Selenide (sulphur) at last, place the high temperature RTA stove that contains VIA family element powders long brilliant, finish the making of Copper Indium Gallium Selenide (sulphur) light absorbing zone.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said formula rate refers to IB: IIIA: the not ear ratio=0.9-1.0 of VI element: 1.0: 2.0.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said IB family element comprises copper.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said IIIA family element comprises indium or gallium or indium gallium composite material.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said VIA family element is selenium or sulphur or selenium sulphur composite material.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, the average grain diameter powder of wherein said large-size particle powder is between 5-500nm.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone, wherein said solvent with adopting non-vacuum process comprise alcohols, ethers, ketone or mix described more than two kinds solvent at least one of them.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, wherein said antivacuum rubbing method comprises electrodeposition process, scraper rubbing method, slot coated method, wire mark method or ultrasonic waves rubbing method.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone, wherein said VIA family element powders with adopting non-vacuum process be selenium powder, sulphur powder or selenium sulphur mixed-powder one of them.
Aforesaid method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process, temperature is between 400-800 ℃ in the wherein said high temperature RTA stove.
When the present invention mainly utilizes allotment Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry, use the copper-indium-gallium-selenium compound of different-grain diameter and normal ratio to be made into slurry, after coating forms the light precursor layer, in the RTA process, add VIA family powder, make VIA family powder high temperature form steam, the loss that the VIA family volatilization of additional Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) precursor layer is caused.
Copper Indium Gallium Selenide of the present invention (sulphur) slurry preparation method, elder generation's computation requirement Copper Indium Gallium Selenide (sulphur) formula rate, mix the IB that contains different average grain diameters, two compositions of IIIA and VIA family element, how the ground rice end is to form original Copper Indium Gallium Selenide (sulphur) mixed-powder that contains for three compositions or four compositions, big grain diameter is in the 5-500nm scope, little particle then is oarse-grained below 30%, for example select the about 100nm bulky grain of average grain diameter earlier for use, then other how the following particle of 30nm is then selected at the ground rice end for use, can make the how rice of different average grain diameters particle is arranged in the mixed-powder, when variable grain when how the ground rice end stacks, formation improves the compactness of last slurry coating film forming caudacoria than closs packing.
The ratio of Copper Indium Gallium Selenide (sulphur) IB, IIIA that formula rate comprised and VIA family element is not ear ratio=0.9-1.0 of IB: IIIA: VI: 1.0: 2.0.Wherein IIIA family element can be the material of pure indium, pure gallium or mixing indium and gallium, VIA family element can be the material of pure selenium, bright sulfur or mixing selenium and sulphur in addition, with single solvents such as this composite material and alcohols, ethers, ketones or mix two or more mixed solvents as mixed media, and interpolation stirs to finish the allotment of slurry, with the material as light-absorbing precursor layer as NaI or interfacial agent of different nature.
Above-mentioned slurry with antivacuum rubbing method, is coated on the substrate that contains bottom electrode as electrodeposition process, scraper rubbing method, slot coated method, wire mark method or ultrasonic waves rubbing method etc., and soft roasting removal solvent is to form precursor layer.
Again precursor layer is made the formation light absorbing zone with 400-800 ℃ of long crystalline substance of high temperature of RTA stove, in addition in the high temperature RTA process, the selenium composition can reduce, can in the RTA process, add pure VIA family element powders, can be selenium powder, sulphur powder or mix selenium powder and sulphur powder, powder is volatilized in high temperature form VIA family steam, the selenium composition of replenish lost makes the ratio that contains IB, IIIA and VIA family element in the precursor layer still maintain not ear ratio=0.9-1.0 of IB: IIIA: VI: 1.0: 2 optimal proportion.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process in order to form even light absorbing zone on antivacuum next molybdenum layer, is characterized in that it may further comprise the steps:
(1) at first, according to formula rate, allocate two compositions, three compositions or the four composition powder that different average grain diameters contain IB, IIIA and VIA family element and contain Copper Indium Gallium Selenide (sulphur) mixed-powder with formation, wherein the small sized particles average grain diameter is below 30% of a large scale average grain diameter;
Secondly (2) add solvent, NaI and interfacial agent and stir to form and contain Copper Indium Gallium Selenide (sulphur) slurry containing Copper Indium Gallium Selenide (sulphur) mixed-powder;
(3) then will contain Copper Indium Gallium Selenide (sulphur) slurry is coated on the substrate that contains bottom electrode with antivacuum rubbing method;
(4) pass through soft roasting removal solvent contains Copper Indium Gallium Selenide (sulphur) with formation light-absorbing precursor layer again;
(5) will contain the light-absorbing precursor layer of Copper Indium Gallium Selenide (sulphur) at last, and place the high temperature RTA stove that contains VIA family element powders long brilliant, finish the making of Copper Indium Gallium Selenide (sulphur) light absorbing zone.
2. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process according to claim 1 is characterized in that wherein said formula rate refers to IB: IIIA: the not ear ratio=0.9-1.0 of VI element: 1.0: 2.0.
3. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process according to claim 1 is characterized in that wherein said IB family element comprises copper.
4. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process according to claim 1 is characterized in that wherein said IIIA family element comprises indium or gallium or indium gallium composite material.
5. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process according to claim 1 is characterized in that wherein said VIA family element is selenium or sulphur or selenium sulphur composite material.
6. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process according to claim 1, the average grain diameter powder that it is characterized in that wherein said large-size particle powder is between 5-500nm.
7. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone according to claim 1 with adopting non-vacuum process, it is characterized in that wherein said solvent comprise alcohols, ethers, ketone or mix described more than two kinds solvent at least one of them.
8. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process according to claim 1 is characterized in that wherein said antivacuum rubbing method comprises electrodeposition process, scraper rubbing method, slot coated method, wire mark method or ultrasonic waves rubbing method.
9. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone according to claim 1 with adopting non-vacuum process, it is characterized in that wherein said VIA family element powders be selenium powder, sulphur powder or selenium sulphur mixed-powder one of them.
10. method of making Copper Indium Gallium Selenide (sulphur) light absorbing zone with adopting non-vacuum process according to claim 1 is characterized in that temperature is between 400-800 ℃ in the wherein said high temperature RTA stove.
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| CN103077998A (en) * | 2011-10-26 | 2013-05-01 | 上海空间电源研究所 | Antivacuum alkali metal doping method for flexible substrate copper indium gallium selenide (CIGS) solar battery |
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| CN101613091A (en) * | 2009-07-27 | 2009-12-30 | 中南大学 | A kind of CIGS powder, target, film and preparation method thereof |
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| CN102694060A (en) * | 2011-07-27 | 2012-09-26 | 上海理工大学 | Non-vacuum preparation technique of compound thin-film solar cell and annealing mode |
| CN102694060B (en) * | 2011-07-27 | 2014-07-23 | 上海理工大学 | Non-vacuum preparation technique of compound thin-film solar cell and annealing mode |
| CN103077998A (en) * | 2011-10-26 | 2013-05-01 | 上海空间电源研究所 | Antivacuum alkali metal doping method for flexible substrate copper indium gallium selenide (CIGS) solar battery |
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