CN101789470A - Method for fabricating CuInGaSe absorbed layer in antivacuum way - Google Patents
Method for fabricating CuInGaSe absorbed layer in antivacuum way Download PDFInfo
- Publication number
- CN101789470A CN101789470A CN201010120009A CN201010120009A CN101789470A CN 101789470 A CN101789470 A CN 101789470A CN 201010120009 A CN201010120009 A CN 201010120009A CN 201010120009 A CN201010120009 A CN 201010120009A CN 101789470 A CN101789470 A CN 101789470A
- Authority
- CN
- China
- Prior art keywords
- powder
- cuingase
- indium gallium
- sulphur
- copper indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for fabricating a CuInGaSe absorbed layer in an antivacuum way, which is used for forming a uniform light absorption layer on a molybdenum layer under an antivacuum condition. The method comprises the following steps of: firstly, mixing the powder of a second component, a third component and a fourth component which contain the elements of an IB group, an IIIA group and a VIA group so as to form a primary mixed powder containing CuInGaSe (sulfide) based on formula ratio; secondly, adding extra VIA group element powder into the mixed powder to form final mixed powder containing the CuInGaSe or CuInGaSe sulfide; thirdly, adding a solvent, a surfactant and an adhesion agent to the final mixed powder and stirring to form CuInGaSe slurry; fourthly, coating the CuInGaSe slurry on a molybdenum layer and soft-baking to enable the solvent to volatilize so as to form a light absorption precursor layer; and finally placing a substrate containing the light absorption precursor layer in an RTA (rapid thermal annealing) furnace containing the VIA group element powder, annealing for growing crystal under a VIA group steam atmosphere formed at high temperature so as to form the light absorption layer containing the CuInGaSe or the CuInGaSe sulfide.
Description
Technical field
The present invention relates to a kind of method of making the Copper Indium Gallium Selenide light absorbing zone, particularly relate to a kind of method of fabricating CuInGaSe absorbed layer in antivacuum way.
Background technology
In recent years, the new line of and environmental consciousness surging with international oil price, green energy resource has become the new forms of energy main flow, wherein solar cell is again because of being the stable radiant energy of taking from the sun, the source can be inexhausted, and therefore more various countries pay attention to draw from one to make good the deficits of another invariably a large amount of development costs and subsidies granted for policy considerations, to foster local solar cell industry, make that the development of global solar industry is very quick.
First generation solar modules comprises the solar modules of monocrystalline silicon and polysilicon, though photoelectric conversion efficiency height and volume production technology maturation, because the material cost height, and Silicon Wafer influences follow-up volume production scale often because of the demand source of goods deficiency of semi-conductor industry.Therefore, comprise (CIGSS) the thin film solar module of the second generation of film and Cadimium telluride thin film of amorphous silicon membrane, Copper Indium Gallium Selenide (CIGS) film or Copper Indium Gallium Selenide (sulphur), in development and ripe gradually in recent years, wherein, therefore come into one's own especially again with the conversion efficiency of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) solar cell the highest (element cell can up to 20% module about 14%).
Seeing also shown in Figure 1ly, is the schematic diagram of prior art Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) solar battery structure.As shown in Figure 1; the copper indium gallium selenium solar cell structure of prior art comprises substrate 10; first conductive layer 20; Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer 30; resilient coating 40; the insulating barrier 50 and second conductive layer 60; wherein substrate 10 can be glass plate; aluminium sheet; Stainless Steel plate or plastic plate; first conductive layer 20 generally comprises metal molybdenum; be used as backplate; Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer 30 is the copper that comprises proper proportion; indium; gallium and selenium; be used as p type film; be main light absorbed layer; resilient coating 40 can comprise cadmium sulfide (CdS); be used as n type film; insulating barrier 50 comprises zinc oxide (ZnO); in order to protection to be provided, second conductive layer 60 comprises zinc oxide aluminum (ZnO:Al), in order to connect front electrode.
The manufacture method of above-mentioned Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) solar cell mainly is divided into vacuum manufacturing process and antivacuum manufacturing process according to the manufacturing environment of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer.Vacuum manufacturing process comprises sputtering method or vapour deposition method, and shortcoming is that cost of investment is higher and stock utilization is lower, so the integral manufacturing cost is higher.Antivacuum manufacturing process comprises print process or electrodeposition process, and shortcoming is that technology is still immature, does not still have the larger area commercial prod.But antivacuum manufacturing process still has the advantage that manufacturing equipment is simple and fabrication process condition is reached easily, and suitable business potential is arranged.
The antivacuum manufacturing process of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer is to allocate Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry or ink (Ink) earlier, in order to be applied on the molybdenum layer.
In the prior art, Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry preparation is to mix with proper proportion earlier to contain IB, two compositions of IIIA and VIA family element, the powder of three compositions or four compositions is to form the original powder that contains Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur), add the solvent of proper proportion again, and stir to form original Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry, add solid (binder) or interfacial agent then property at last, and mix to form last Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry with raising Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer and molybdenum backplate.
The shortcoming of above-mentioned prior art is, the slurry that configures is in the RTA process, can be because the selenium volatilization, cause the original scale of IB/IIIA/VIA in Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer to change too greatly, influence the optical absorption characteristics of Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) absorbed layer, severe patient can cause this light absorbing zone to be varied to the N layer from the P layer, formed solar cell can lose the characteristic of battery, be the selenium of replenish lost in the past, can use the selenizing processing procedure, promptly use highly toxic hydrogen selenide gas, with the selenium composition of replenish lost, but highly toxic hydrogen selenide gas one can cause fatal danger slightly accidentally.Therefore, need a kind of danger lower, the light absorbing zone manufacture method that can replenish VI family composition again is to improve above-mentioned prior art problems.
Summary of the invention
The objective of the invention is to, overcome the defective of the method existence of existing fabricating CuInGaSe absorbed layer in antivacuum way, and a kind of method of new fabricating CuInGaSe absorbed layer in antivacuum way is provided, technical problem to be solved is to make it not use the selenizing method, avoids using dangerous hydrogen selenide.
The object of the invention to solve the technical problems realizes by the following technical solutions.The method of a kind of fabricating CuInGaSe absorbed layer in antivacuum way that proposes according to the present invention, in order on antivacuum next molybdenum layer and form even light absorbing zone, this method may further comprise the steps: step 1, according to formula rate, mix and contain two compositions, three compositions or the four composition powder of IB, IIIA and VIA family element to form original Copper Indium Gallium Selenide (sulphur) mixed-powder that contains; Step 2 is added extra VIA family element powders in this mixed-powder, the ratio of VIA family is improved, and forms the last mixed-powder that contains Copper Indium Gallium Selenide or contain Cu-In-Ga-Se-S; Step 3 is added solvent, interfacial agent and solid to this last mixed-powder and stir, and uses the copper indium gallium selenide sizing agent that formation contains IB, IIIA and VIA family element; Step 4 is coated on this copper indium gallium selenide sizing agent on the molybdenum layer, and the soft roasting solvent evaporates that makes forms light-absorbing precursor layer; And step 5, the substrate that will contain Copper Indium Gallium Selenide (sulphur) precursor layer again places the RTA stove that contains VIA family element powders, and high temperature forms the long crystalline substance of annealing under the VIA family vapor atmosphere, contains the light absorbing zone of Copper Indium Gallium Selenide (sulphur) with formation.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The method of aforesaid fabricating CuInGaSe absorbed layer in antivacuum way, wherein said IB family element comprises copper.
The method of aforesaid fabricating CuInGaSe absorbed layer in antivacuum way, wherein said IIIA family element comprises indium or gallium or indium gallium composite material.
The method of aforesaid fabricating CuInGaSe absorbed layer in antivacuum way, wherein said VI family element can be selenium, sulphur or selenium sulphur composite material.
The method of aforesaid fabricating CuInGaSe absorbed layer in antivacuum way, the VI family element of wherein said extra interpolation can be selenium powder, sulphur powder or selenium sulphur mixed-powder.
The method of aforesaid fabricating CuInGaSe absorbed layer in antivacuum way, wherein said solvent comprise alcohols, ethers, ketone or mix described more than two kinds solvent at least one of them.
The method of aforesaid fabricating CuInGaSe absorbed layer in antivacuum way, wherein said RTA furnace temperature is between 400-800 ℃.
The method of aforesaid fabricating CuInGaSe absorbed layer in antivacuum way, wherein the VIA family element powders that places the RTA stove described in can be selenium powder end, sulphur powder or contains the mixed-powder of selenium sulphur.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, for achieving the above object, the invention provides a kind of method of fabricating CuInGaSe absorbed layer in antivacuum way, the main utilization when allocating Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) slurry, use the copper-indium-gallium-selenium compound of normal ratio to be made into slurry, after coating forms the light precursor layer, in the RTA process, add VIA family powder, make VIA family powder high temperature form steam, the loss that the VIA family volatilization of additional Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) precursor layer is caused.
By technique scheme, the method for fabricating CuInGaSe absorbed layer in antivacuum way of the present invention has following advantage and beneficial effect at least:
Problem solved by the invention or the benefit of being brought
One, the method for fabricating CuInGaSe absorbed layer in antivacuum way of the present invention is not used the selenizing method, avoids using dangerous hydrogen selenide.
Two, the method for fabricating CuInGaSe absorbed layer in antivacuum way of the present invention is not used the selenizing method, adds VIA family powder in the RTA process, makes VIA family powder high temperature form steam, the loss that the VIA family volatilization of additional Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) precursor layer is caused.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the schematic diagram of the copper indium gallium selenium solar cell structure of prior art.
Fig. 2 is the flow chart of the method for fabricating CuInGaSe absorbed layer in antivacuum way of the present invention.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of method, structure, step, feature and the effect thereof of the fabricating CuInGaSe absorbed layer in antivacuum way that foundation the present invention is proposed describe in detail as open.
Seeing also shown in Figure 2ly, is the flow chart of the method for fabricating CuInGaSe absorbed layer in antivacuum way of the present invention.The method of the fabricating CuInGaSe absorbed layer in antivacuum way of preferred embodiment of the present invention may further comprise the steps.
IB, the IIIA that Copper Indium Gallium Selenide or Cu-In-Ga-Se-S formula rate are comprised and the ratio of VIA family element are molar ratio=0.9-1.0 of IB: IIIA: VI: 1.0: 2.0.Wherein IB family element comprises copper, and I I IA family element can be pure indium, pure gallium or mixes the material of indium and gallium, and VIA family element can be the material of pure selenium, bright sulfur or mixing selenium and sulphur in addition.
Step 110, to contain the original mixed powder in Copper Indium Gallium Selenide or the Copper Indium Gallium Selenide sulphur formula, add extra VIA family element powders, the ratio of VIA family is improved, formation contains the last mixed-powder of Copper Indium Gallium Selenide or Cu-In-Ga-Se-S, the ratio of the IB that wherein comprises, IIIA and VIA family element is the molar ratio=1.0: 1.0 of IB: IIIA: VI: X, X is between 2.0～4.0.
Step 120 is added into solvent, interfacial agent and solid in the last mixed-powder of step 110 and stirs and forms the slurry that contains Copper Indium Gallium Selenide or contain Cu-In-Ga-Se-S, with the material as light-absorbing precursor layer.This solvent can be single solvents such as alcohols, ethers, ketone or mix two or more mixed solvents; This interfacial agent can be as NaI or interfacial agent of different nature.
Step 130 is coated on the slurry in the step 110 on the molybdenum layer (substrate that contains bottom electrode) with antivacuum rubbing method, and soft roasting removal solvent is to form light-absorbing precursor layer.This antivacuum rubbing method, as electrodeposition process, scraper rubbing method, slot coated method, wire mark method or ultrasonic waves rubbing method etc., but not as limit.
Step 140, again the light-absorbing precursor layer in the step 120 is made the formation light absorbing zone with 400-800 ℃ of long crystalline substance of high temperature of RTA stove, in the RTA process, add VIA family element powders, powder is volatilized in high temperature form VIA family steam, the selenium composition of replenish lost makes the ratio that contains IB, IIIA and VIA family element in the precursor layer still maintain molar ratio=0.9-1.0 of IB: IIIA: VI: 1.0: 2 optimal proportion.The VIA family element powders that adds in the step 140 can be selenium powder, sulphur powder or mixes the mixture of selenium powder and sulphur powder.
One, the method for fabricating CuInGaSe absorbed layer in antivacuum way of the present invention is not used the selenizing method, avoids using dangerous hydrogen selenide.
Two, the method for fabricating CuInGaSe absorbed layer in antivacuum way of the present invention is not used the selenizing method, adds VIA family powder in the RTA process, makes VIA family powder high temperature form steam, the loss that the VIA family volatilization of additional Copper Indium Gallium Selenide or Copper Indium Gallium Selenide (sulphur) precursor layer is caused.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (8)
1. the method for a fabricating CuInGaSe absorbed layer in antivacuum way in order on antivacuum next molybdenum layer and form even light absorbing zone, is characterized in that this method may further comprise the steps:
At first, according to formula rate, mix the original mixed powder that two compositions, three compositions or the four composition powder that contain IB, IIIA and VIA family element contain Copper Indium Gallium Selenide with formation or contain Cu-In-Ga-Se-S;
Secondly, in this mixed-powder, add extra VIA family element powders, the ratio of VIA family is improved, form the last mixed-powder that contains Copper Indium Gallium Selenide or contain Cu-In-Ga-Se-S;
Add solvent, interfacial agent and solid again to this last mixed-powder and stir, use the copper indium gallium selenide sizing agent that formation contains IB, IIIA and VIA family element;
Then, this copper indium gallium selenide sizing agent is coated on the molybdenum layer, the soft roasting solvent evaporates that makes forms light-absorbing precursor layer; And
At last, the substrate that will contain this light-absorbing precursor layer again places the RTA stove that contains VIA family element powders, and it is long brilliant that high temperature forms under the VIA family vapor atmosphere annealing, with formation contain Copper Indium Gallium Selenide or contain Cu-In-Ga-Se-S light absorbing zone.
2. method according to claim 1 is characterized in that wherein said IB family element comprises copper.
3. method according to claim 1 is characterized in that wherein said IIIA family element comprises indium or gallium or indium gallium composite material.
4. method according to claim 1 is characterized in that wherein said VI family element can be selenium, sulphur or selenium sulphur composite material.
5. method according to claim 1, the VIA family element powders that it is characterized in that wherein said extra interpolation comprise selenium powder end, sulphur powder or contain selenium sulphur mixed-powder at least one of them.
6. method according to claim 1, it is characterized in that wherein said solvent comprise alcohols, ethers, ketone or mix described more than two kinds solvent at least one of them.
7. method according to claim 1 is characterized in that wherein said RTA furnace temperature is between 400-800 ℃.
8. method according to claim 1, the VIA family element powders that it is characterized in that the wherein said RTA of placing stove are selenium powder end, sulphur powder or the mixed-powder that contains selenium sulphur.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010120009A CN101789470A (en) | 2010-02-12 | 2010-02-12 | Method for fabricating CuInGaSe absorbed layer in antivacuum way |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010120009A CN101789470A (en) | 2010-02-12 | 2010-02-12 | Method for fabricating CuInGaSe absorbed layer in antivacuum way |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101789470A true CN101789470A (en) | 2010-07-28 |
Family
ID=42532606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010120009A Pending CN101789470A (en) | 2010-02-12 | 2010-02-12 | Method for fabricating CuInGaSe absorbed layer in antivacuum way |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101789470A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102463349A (en) * | 2010-11-05 | 2012-05-23 | 慧濠光电科技股份有限公司 | Manufacturing method of copper-indium-gallium-selenium-sulfur five-element target material |
| CN109671787A (en) * | 2019-01-08 | 2019-04-23 | 哈尔滨理工大学 | A kind of CuInGaSe absorbed layer of no selenidation process antivacuum method preparation |
| CN110752272A (en) * | 2019-10-18 | 2020-02-04 | 信阳师范学院 | Method for improving efficiency of flexible copper indium gallium sulfur selenium thin-film solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060178012A1 (en) * | 2001-04-16 | 2006-08-10 | Basol Bulent M | Method of Forming Semiconductor Compound Film for Fabrication of Electronic Device and Film Produced By Same |
| CN101443892A (en) * | 2006-02-23 | 2009-05-27 | 耶罗恩·K·J·范杜伦 | High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material |
| CN101531529A (en) * | 2009-04-14 | 2009-09-16 | 武汉理工大学 | Preparation method of CuInxGa1-xSe2 powder |
| CN201332102Y (en) * | 2008-12-25 | 2009-10-21 | 北京有色金属研究总院 | Device for selenizing light absorption layer of thin film solar cell based on copper indium selenide |
-
2010
- 2010-02-12 CN CN201010120009A patent/CN101789470A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060178012A1 (en) * | 2001-04-16 | 2006-08-10 | Basol Bulent M | Method of Forming Semiconductor Compound Film for Fabrication of Electronic Device and Film Produced By Same |
| CN101443892A (en) * | 2006-02-23 | 2009-05-27 | 耶罗恩·K·J·范杜伦 | High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material |
| CN201332102Y (en) * | 2008-12-25 | 2009-10-21 | 北京有色金属研究总院 | Device for selenizing light absorption layer of thin film solar cell based on copper indium selenide |
| CN101531529A (en) * | 2009-04-14 | 2009-09-16 | 武汉理工大学 | Preparation method of CuInxGa1-xSe2 powder |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102463349A (en) * | 2010-11-05 | 2012-05-23 | 慧濠光电科技股份有限公司 | Manufacturing method of copper-indium-gallium-selenium-sulfur five-element target material |
| CN109671787A (en) * | 2019-01-08 | 2019-04-23 | 哈尔滨理工大学 | A kind of CuInGaSe absorbed layer of no selenidation process antivacuum method preparation |
| CN110752272A (en) * | 2019-10-18 | 2020-02-04 | 信阳师范学院 | Method for improving efficiency of flexible copper indium gallium sulfur selenium thin-film solar cell |
| CN110752272B (en) * | 2019-10-18 | 2021-07-06 | 信阳师范学院 | Method for improving efficiency of flexible copper indium gallium selenide thin-film solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Niki et al. | CIGS absorbers and processes | |
| Abermann | Non-vacuum processed next generation thin film photovoltaics: towards marketable efficiency and production of CZTS based solar cells | |
| Naghavi et al. | Buffer layers and transparent conducting oxides for chalcopyrite Cu (In, Ga)(S, Se) 2 based thin film photovoltaics: present status and current developments | |
| Shafarman et al. | Cu (InGa) Se2 Solar Cells | |
| CN1214445C (en) | Oxide-based method of making compound semiconductor film and making related electronic devices | |
| Jo et al. | 8% Efficiency Cu2ZnSn (S, Se) 4 (CZTSSe) thin film solar cells on flexible and lightweight molybdenum foil substrates | |
| CN103069572B (en) | Compound semiconductor film making ink, the compound semiconductor film using this ink to obtain, possess the solar cell of this compound semiconductor film and the manufacture method of this solar cell | |
| US8569102B2 (en) | Method of manufacturing high density CIS thin film for solar cell and method of manufacturing thin film solar cell using the same | |
| Ge et al. | The interfacial reaction at ITO back contact in kesterite CZTSSe bifacial solar cells | |
| US7922804B2 (en) | Method for preparing sol-gel solution for CIGS solar cell | |
| JP5874645B2 (en) | Compound semiconductor thin film solar cell and method for manufacturing the same | |
| Chu et al. | Semi-transparent thin film solar cells by a solution process | |
| Li et al. | Emergence of flexible kesterite solar cells: Progress and perspectives | |
| CN101789470A (en) | Method for fabricating CuInGaSe absorbed layer in antivacuum way | |
| Hanket et al. | Characterization and device performance of (AgCu)(InGa) Se 2 absorber layers | |
| CN101818375A (en) | Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process | |
| CN101820024A (en) | Production method of multiple copper indium gallium selenide (sulfur) light-absorbing precursor layers | |
| CN101826574A (en) | Method for making copper-indium-gallium-selenium light-absorbing layer under non-vacuum condition | |
| KR20110001734A (en) | Method of fabricating of solar cell | |
| US20150162480A1 (en) | Method of manufacturing ci(g)s-based thin film having reduced carbon layer, thin film manufactured by the method, and solar cell comprising the thin film | |
| KR101584072B1 (en) | Non-vacuum Process Method of Thin film using Carbon Layer as Diffusion Barier Film | |
| Li et al. | Study on the performance of oxygen-rich Zn (O, S) buffers fabricated by sputtering deposition and Zn (O, S)/Cu (In, Ga)(S, Se) 2 interfaces | |
| CN101820025A (en) | Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process | |
| Luo et al. | Recent Progress on Cu2BaSn (SxSe1–x) 4: From Material to Solar Cell Applications | |
| CN101820029A (en) | Non-vacuum manufacturing method of CIGS and/or CIGSS (copper-indium-gallium-selenium and/or sulphur) solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100728 |