WO2007032175A1 - 導電性積層体及び有機el素子 - Google Patents
導電性積層体及び有機el素子 Download PDFInfo
- Publication number
- WO2007032175A1 WO2007032175A1 PCT/JP2006/316052 JP2006316052W WO2007032175A1 WO 2007032175 A1 WO2007032175 A1 WO 2007032175A1 JP 2006316052 W JP2006316052 W JP 2006316052W WO 2007032175 A1 WO2007032175 A1 WO 2007032175A1
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- WIPO (PCT)
- Prior art keywords
- layer
- organic
- conductive laminate
- indium
- zinc
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011701 zinc Substances 0.000 claims abstract description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052738 indium Inorganic materials 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 13
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 239000011733 molybdenum Substances 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 7
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 7
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 7
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 7
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims abstract description 7
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims abstract description 7
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 239000010955 niobium Substances 0.000 claims abstract description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 7
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims abstract description 7
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 6
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 150000004767 nitrides Chemical class 0.000 claims abstract description 5
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 4
- 239000011777 magnesium Substances 0.000 claims abstract description 4
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 3
- 239000010941 cobalt Substances 0.000 claims abstract description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 239000010937 tungsten Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 95
- -1 zirco-a Chemical compound 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 239000012044 organic layer Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 abstract description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 14
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000013080 microcrystalline material Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 235000014692 zinc oxide Nutrition 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052955 covellite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01059—Praseodymium [Pr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
Definitions
- the present invention relates to a conductive laminate and an organic electoluminescence device (organic EL device) using the same.
- Patent Document 1 is a method in which ITO is deposited at room temperature and then heated in an oxidizing atmosphere or oxygen plasma irradiation.
- No. 3 a method of implanting oxygen ions after ITO film formation is disclosed.
- Patent Document 4 Patent Document 5
- Patent Document 6 Patent Document 7, and Patent Document 8 disclose approaches from electrode materials.
- the organic EL elements disclosed in these documents have a structure in which an inorganic semiconductor layer as a hole injection layer or an electron injection layer and an organic light emitting layer are laminated.
- the lifetime of the element is improved by using an inorganic semiconductor layer that is less deteriorated than the organic layer.
- Patent Document 4 as an inorganic semiconductor layer material, for example, amorphous Sil-X CX III-V or II-V amorphous material, Cul, CuS, GaAs and ZnTe A crystalline material such as is used.
- Patent Document 6 and Patent Document 7 crystalline oxide semiconductor materials such as Cu 2 O are used as the material of the inorganic semiconductor layer.
- Patent Document 8 an inorganic non-degenerate semiconductor that includes an amorphous material or a microcrystalline material between the anode and the organic light emitting layer and has a band gap energy larger than that of the organic light emitting layer. A method of providing a layer is disclosed.
- these organic EL devices have a problem that the light emission efficiency is lowered.
- the temperature is higher (200 ° C. or higher) than the heat resistant temperature of the organic light emitting layer. For this reason, the organic light emitting layer has to be formed after the inorganic semiconductor layer is formed.
- the energy gap of the amorphous material of Si 1 -XCX used in the organic EL devices disclosed in Patent Document 4 and Patent Document 5 is smaller than 2.6 eV.
- the energy gap of the organic light emitting layer containing an aluminum complex or a stilbene derivative is larger than 2.6 eV.
- the oxide semiconductor such as Cu 2 O used in Patent Document 6 and Patent Document 7 is crystalline.
- oxide semiconductors such as Cu 2 O are baked at high temperatures, they have a thickness of 50 nm or more.
- the organic EL element of Patent Document 8 has a structure in which a first electrode layer, an inorganic non-degenerate semiconductor layer, one or more organic layers including a light emitting layer, and a second electrode layer are sequentially stacked, and an inorganic EL element.
- the semiconductor layer is characterized in that it contains an amorphous material or a microcrystalline material and has a band gap energy larger than the band gap energy of the organic light emitting layer, so that the efficiency of the element can be improved and the lifetime can be extended.
- Patent Document 1 JP-A-8-167479
- Patent Document 2 JP 2000-68073 A
- Patent Document 3 Japanese Patent Laid-Open No. 2001-284060
- Patent Document 4 JP-A-1-312873
- Patent Document 5 Japanese Patent Laid-Open No. 2-207488
- Patent Document 6 Japanese Patent Laid-Open No. 5-41285
- Patent Document 7 Japanese Patent Laid-Open No. 6-119973
- Patent Document 8 Japanese Patent Laid-Open No. 11-297478
- An object of the present invention is to provide a long-life organic EL device having a low driving voltage and a high luminous efficiency.
- the present inventors have determined that if a conductive laminate having a specific first layer and a second layer force is used as the anode, the driving voltage can be reduced. It was found that an organic EL that satisfies the requirements of reduction, improvement of luminous efficiency, and extension of lifetime can be obtained. According to the present invention, the following conductive laminate and organic EL element are provided. 1. Metal or transparent conductive material force first layer,
- the work function of the second layer is greater than the work function of the first layer
- the second carrier concentration of the layer is, 10 15 cm_ 3 or more at which 1 or 2 wherein the conductive product Sotai.
- the first layer is made of one or more metals selected from gold, platinum, noradium, copper, aluminum, neodymium, silicon, titanium, chromium, nickel, silver and molybdenum force. Conductive laminate.
- the transparent conductive material constituting the first layer is an oxide of one or more metals selected from indium, zinc, tin, aluminum, gallium, titanium, and niobium force. Conductive laminate.
- the second layer is selected from indium, tin, zinc, lanthanum, cerium, praseodymium, neodymium, samarium, samarium, gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium force.
- the conductive laminate according to any one of 1 to 5, comprising an oxide of the metal.
- An organic electoluminescence device having an organic layer including a light emitting layer interposed between a cathode and an anode, wherein the conductive laminate according to any one of 1 to 6 is used as the anode.
- Machine-elect luminescence element Machine-elect luminescence element.
- FIG. 1 is a diagram showing an embodiment of an organic EL device of the present invention.
- the conductive laminate of the present invention comprises a first layer and a second layer.
- the first layer is a metal or transparent conductive material force.
- the metal constituting the first layer can be gold, platinum, cerium, copper, aluminum, neodymium, silicon, One or more metals selected from tan, chromium, nickel, zinc, molybdenum, indium, tin, silver and antimony are preferred. More preferred are one or more metals from which gold, platinum, palladium, copper, aluminum, neodymium, silicon, titanium, chromium, nickel, silver and molybdenum forces are also selected.
- the thickness of the first layer is not particularly limited, but is, for example, 10 nm to 500 nm.
- at least a semi-transparent electrode can be obtained by setting the metal to 5 nm to 50 nm.
- the first layer is a transparent conductive material
- indium, zinc, tin, aluminum, gallium, titanium and niobium forces are also selected. It is also preferred that the armor force is also configured.
- indium and tin oxides, indium, tin and zinc oxides, zinc and aluminum oxides, zinc and gallium oxides, titanium and niobium oxides, indium and Examples include zinc oxide and transparent conductive materials.
- the second layer is indium, tin, zinc, aluminum, magnesium, silicon, titanium, vanadium, manganese, connort, nickel, copper, gallium, germanium, yttrium, zirco-a, niobium, molybdenum, antimony, barium.
- One or more metal acids selected It consists of metal, carbide or nitride, or carbon.
- the second layer is indium, tin, zinc, aluminum, lanthanum, cerium, brazeodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium force.
- the driving voltage of the organic EL element can be more effectively reduced, the luminous efficiency can be improved, and the life can be extended.
- the thickness of the second layer is preferably 0.5 nm or more and less than 50 nm. If the thickness of the second layer is less than 0.5 nm, the film thickness is too small and the effect of generating an electric field may be lost. In addition, when the thickness of the second layer is 50 nm or more, since the thickness is too large, the electric field for promoting hole injection may not work effectively. A more preferable film thickness is from 1 nm to 20 nm.
- the work function of the second layer is larger than the work function of the first layer.
- the first layer force also diffuses into the second layer so that the Fermi levels match. This creates an electric field in a direction that facilitates positive injection of holes.
- carrier concentration of the second layer is 10 15 CM_ 3 or more. If the carrier concentration is less than 10 15 cm _3 , electrons cannot be accepted when bonded to the first layer.
- the laminate is usually formed on an insulating substrate so that the first layer is on the substrate side.
- the conductive laminate of the present invention can be produced by sequentially laminating two layers by a method such as sputtering, ion plating, vacuum deposition, sol-gel, and printing.
- the conductive laminate of the present invention can be used as an electrode, in particular, an organic EL electrode for promoting hole injection.
- the organic EL device of the present invention uses the above conductive laminate for the anode.
- FIG. 1 shows an embodiment of the organic EL device of the present invention.
- an organic EL element 1 is provided on a glass substrate 2, and the organic EL element 1 has an organic layer 20 between an anode 10 and a cathode 30 facing each other.
- the anode 10 is a laminated body composed of a first layer 12 and a second layer 14 according to the conductive laminate strength of the present invention.
- the organic layer 20 includes a hole injection layer 22, a hole transport layer 24, a light emitting layer 26, and an electron injection layer 28.
- the holes supplied from the hole transport layer 24 and the electrons supplied from the electron injection layer 28 combine to emit light.
- the cathode 30 is a laminate composed of a conductive layer 32 and an electron injection metal layer 34.
- the configuration of the organic EL element is not limited to the configuration shown in FIG. 1, and various changes can be made.
- the conductive film thus obtained had a thickness of 120 nm and a specific resistance of 2 ⁇ 10_3 ⁇ ′cm .
- this conductive film was annealed in air at 300 ° C. for 1 hour to obtain a transparent electrode ITO (ITO substrate).
- the ITO work function thus obtained was measured with AC-1 (RIKEN Keiki Co., Ltd.) and found to be 4.8 eV.
- IZO indium zinc oxide
- both the ITO substrate obtained above and a slide glass were used.
- the physical properties of IZO alone were evaluated using the same method as that of ITO using the film formed on the slide glass.
- the film thickness was 2 nm
- the specific resistance was 2 ⁇ 10 _2 ⁇ 'cm
- the work function was 5.3 eV
- the carrier concentration was 5 ⁇ 10 19 cm _3 .
- the film thickness was measured with DEKTAK (manufactured by SLOAN Co., Ltd.) when a film was formed for 5 minutes under the same conditions using the target 2, and a calibration curve was created and controlled by the film formation time.
- an 8-hydroxyquinoline A1 complex (Alq complex), which is an electron-transporting organic compound, is used as a light-emitting layer to a thickness of 60 nm by resistance heating. Vapor deposited. Further, an Al: Li alloy was deposited as a counter electrode on the light emitting layer to a thickness of 200 nm by resistance heating. In Example 1, this counter electrode is a cathode. The organic EL element of Example 1 was formed through the above steps.
- the device was driven at a constant voltage by applying a voltage of 6 V between the lower electrode and the counter electrode.
- the initial luminance at this time was 120 cdZm 2 and the luminous efficiency was 1.51 mZW.
- the half-life was measured with a current value of 120 cd / m 2 constant, it was 5700 hours. The half-life means the time required for the luminance to become half the initial luminance.
- target 1 and target 2 were changed to the oxide powders of the respective metal elements shown in Tables 1 and 2, and targets were produced in the same manner as in Example 1. Next, a laminate and an organic EL element were produced in the same manner as in Example 1, and the performance of the organic EL element was evaluated. The results are shown in Table 1 and Table 2.
- the target string indicates the ratio of each metal atom to the total metal atoms in the target, and the target contains oxygen atoms in addition to metal atoms.
- Examples 28-36 a metal thin film was used for the first layer.
- the target 1 used was a metal or alloy target shown in Table 2.
- a target was produced in the same manner as in Example 1 except that the target 2 was changed to the oxide powder of each metal element shown in Table 2.
- a laminate and an organic EL device were produced in the same manner as in Example 1 except that sputtering was performed without introducing oxygen using these targets, and the performance of the organic EL device was evaluated. . The results are shown in Table 2.
- the conductive laminate of the present invention can be used as an electrode.
- it is suitably used for elements that require control of carrier injection, such as organic EL elements.
- the organic EL device of the present invention can be used for various display devices.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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Abstract
Description
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Priority Applications (3)
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US12/066,453 US20090039775A1 (en) | 2005-09-12 | 2006-08-15 | Conductive laminate and organic el device |
JP2007535402A JPWO2007032175A1 (ja) | 2005-09-12 | 2006-08-15 | 導電性積層体及び有機el素子 |
EP06796442A EP1933603A1 (en) | 2005-09-12 | 2006-08-15 | Conductive laminate and organic el device |
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JP2005263859 | 2005-09-12 | ||
JP2005-263859 | 2005-09-12 |
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WO2007032175A1 true WO2007032175A1 (ja) | 2007-03-22 |
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US (1) | US20090039775A1 (ja) |
EP (1) | EP1933603A1 (ja) |
JP (1) | JPWO2007032175A1 (ja) |
KR (1) | KR20080042887A (ja) |
CN (1) | CN101263744A (ja) |
TW (1) | TW200723954A (ja) |
WO (1) | WO2007032175A1 (ja) |
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CN110783462A (zh) * | 2018-07-27 | 2020-02-11 | 诺瓦尔德股份有限公司 | 电子器件、显示装置、其制备方法和化合物 |
CN110783462B (zh) * | 2018-07-27 | 2024-05-24 | 诺瓦尔德股份有限公司 | 电子器件、显示装置、其制备方法和化合物 |
Also Published As
Publication number | Publication date |
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US20090039775A1 (en) | 2009-02-12 |
JPWO2007032175A1 (ja) | 2009-03-19 |
EP1933603A1 (en) | 2008-06-18 |
KR20080042887A (ko) | 2008-05-15 |
CN101263744A (zh) | 2008-09-10 |
TW200723954A (en) | 2007-06-16 |
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