WO2006120904A1 - 表面波励起プラズマ処理装置 - Google Patents
表面波励起プラズマ処理装置 Download PDFInfo
- Publication number
- WO2006120904A1 WO2006120904A1 PCT/JP2006/308732 JP2006308732W WO2006120904A1 WO 2006120904 A1 WO2006120904 A1 WO 2006120904A1 JP 2006308732 W JP2006308732 W JP 2006308732W WO 2006120904 A1 WO2006120904 A1 WO 2006120904A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- microwave
- dielectric
- surface wave
- plasma
- processing apparatus
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Definitions
- the present invention relates to a surface wave excited plasma processing apparatus that performs various types of processing using surface wave excited plasma.
- an apparatus using surface wave excitation plasma is known.
- the microwave waveguides are branched and arranged in parallel on the dielectric plate, the microwaves introduced from one microwave generator are branched and propagated in each microwave waveguide, and the dielectric
- an apparatus that aims to generate plasma uniformly over a large area by taking in microwave power from a wide area on a body plate see, for example, Patent Document 1).
- Patent Document 1 Japanese Patent Laid-Open No. 2005-33100 (Page 2, FIGS. 1 and 4)
- a large-area plasma can be generated by distributing microwave power to a plurality of branched microwave waveguides.
- the coupling state between the microwave power and the plasma for each waveguide changes due to a slight change in the plasma that is the load, and the distribution ratio of the input power to each waveguide changes. In some cases, a uniform plasma cannot be obtained.
- a surface wave excitation plasma processing apparatus includes a microwave generation unit that generates a microwave, and a microwave that introduces the microwave from the microwave generation unit and propagates the inside of the tube.
- Waveguides, slot antennas that are openings of a predetermined shape arranged on the H-plane of microwave waveguides, and the slot antenna force of microwave waveguides is also excited by surface waves by introducing microwaves and forming surface waves
- Two or more plasma source portions having a dielectric member for generating plasma, and between two adjacent side surfaces of the two or more dielectric members arranged side by side A reflection plate is provided.
- the invention according to claim 2 is the surface wave excitation plasma processing apparatus according to claim 1, wherein the reflecting plate is at least a surface of an electric conductor, and the surface potential of each of the dielectric members is disposed. It is characterized by being short-circuited to the housing.
- the invention according to claim 3 is the surface wave-excited plasma processing apparatus according to claim 1 or 2, wherein at least the surface is an electric conductor on the outer peripheral side surface of the two or more dielectric members, and the surface potential thereof Is provided with a side reflector short-circuited to the housing.
- the invention according to claim 4 is characterized in that, in the surface wave excitation plasma treatment according to any one of claims 1 to 3, a dielectric plate that covers at least an exposed portion of the reflector is provided. .
- each plasma generation part can be controlled independently, and by adjusting these, it is possible to constantly maintain a uniform plasma generation in a large area.
- FIG. 1 is a plan view schematically showing a schematic configuration of a SWP processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a longitudinal sectional view schematically showing a configuration of a main part of the SWP processing apparatus according to the embodiment of the present invention.
- FIG. 3 is a bottom view of dielectric blocks 13 and 23 as seen along line II in FIG.
- FIG. 4 is a diagram schematically showing a configuration of a plasma source of the SWP processing apparatus according to the embodiment of the present invention.
- Fig. 4 (a) shows a configuration with two plasma sources
- Fig. 4 (b) shows a configuration with three plasma sources.
- Chamber 2 Chamber body
- FIG. 1 is a plan view schematically showing a schematic configuration of a SWP processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a longitudinal sectional view schematically showing the configuration of the main part of the SWP processing apparatus according to the embodiment of the present invention.
- SWP processing apparatus 100 includes chamber 1 and two plasma sources 10 and 20.
- the chamber 1 is a closed casing for performing plasma processing of the substrate to be processed.
- the plasma source 10 includes a microwave generator 11, a microwave waveguide 12, and a dielectric block 13.
- the microwave generator 11 includes a high-voltage power source l la, a microwave oscillator l lb, an isolator l lc, a directional coupler l ld, a matching unit l ie, and a connecting tube 1 If, and oscillates microwaves to conduct microwaves. It is configured to output to the end face of the wave tube 12.
- the microwave waveguide 12 is made of a nonmagnetic material such as an aluminum alloy, copper, or copper alloy, and is attached to the upper portion of the chamber 1 and extends in the left-right direction in FIG. .
- a microwave introduction port 12a connected to the connection tube 1 If is provided on the left end face of the microwave waveguide 12, and a termination coupler 12b is provided on the right end face.
- Microwave M introduced from microwave inlet 12a travels in the right direction.
- the dielectric block 13 is a flat plate that is made of quartz, alumina, zirconium, or the like and is disposed in the chamber 1 in contact with the lower surface of the microwave waveguide 12. As will be described later, plasma is generated in the internal space of the chamber 1 by introducing microwave power from the microwave waveguide 12 to the dielectric block 13.
- the plasma source 20 has the same configuration as the plasma source 10.
- Microwave generator 21 The microwave generator 11 has the same dimensions, shape, standards, etc., and the microwave waveguide 22 has the same dimensions, shapes, standards, etc. as the microwave waveguide 12, and the dielectric block 23 has The dimensions, shape, material, etc. are the same as the dielectric block 13. That is, the chamber 1 is provided with plasma sources 10 and 20 having the same configuration. Therefore, in the following, plasma source 10 will be mainly described.
- the chamber 1 is a sealed housing having a chamber body 2 and a lid 3 disposed on the upper surface of the body 2.
- the chamber body 2 is connected to a substrate holder 4 that holds the substrate S to be processed, a gas supply port 5 that is connected to a gas supply system (not shown) and introduces a predetermined gas into the chamber 10, and A vacuum exhaust port 6 that is connected to a vacuum pump and exhausts gas from the chamber 10 is provided.
- Microwave waveguides 12 and 22 are attached to the lid 3 in parallel.
- a plurality of slot antennas 12c are arranged on the bottom plate 12d of the microwave waveguide 12 along the axial direction (perpendicular to the paper surface) of the tube at a predetermined interval.
- the slot antenna 12c is a long rectangular opening formed through the bottom plate 12d.
- the inner surface of the bottom plate 12a is called a magnetic field surface (H surface).
- the microphone mouth wave waveguide 22 has the same configuration as the microwave waveguide 12.
- the dielectric block 13 is disposed on the lower surface of the lid 3 so as to be in contact with the bottom plate 12 d of the microwave waveguide 12 and to maintain airtightness in the chamber 10.
- the dielectric block 23 is disposed below the microwave waveguide 22. Therefore, the dielectric blocks 13 and 23 are arranged side by side at a predetermined interval.
- FIG. 3 which is a bottom view of the dielectric blocks 13 and 23 taken along line II in FIG. 2, a reflector 30 is provided between the dielectric blocks 13 and 23 arranged side by side.
- the upper side is disposed in contact with the lower surface of the lid 3.
- the reflecting plate 30 has a shape and dimension equal to the boundary surface between the dielectric blocks 13 and 23, and is made of an aluminum alloy, stainless steel, copper alloy or the like, and has non-magnetism and conductivity. Since the upper side of the reflector 30 is short-circuited to the lid 3, the reflector 30, the lid 3 and the microwave waveguide 12 are at the same potential.
- the reflecting plate 30 may be composed of a core body made of an insulating material and a covering material such as an aluminum alloy or stainless steel as long as the surface thereof has conductivity.
- a side reflector 40 is disposed around the dielectric blocks 13 and 23 so that the upper side thereof is in contact with the lower surface of the lid 3.
- the side reflector 40 has four flat plates 40a to 40d and has a height substantially equal to the thickness of the dielectric blocks 13 and 23, respectively.
- the side reflector 40 is made of an aluminum alloy, stainless steel, or the like, similar to the reflector 30, and has non-magnetism and conductivity. Since the upper side of the side reflector 40 is short-circuited to the lid 3, the side reflector 40, the lid 3 and the microwave waveguide 12 are at the same potential.
- the cylindrical reflector 40 may be formed of a core body made of an insulating material and a covering material such as an aluminum alloy or stainless steel as long as the surface thereof has conductivity.
- a dielectric plate 50 is provided below the dielectric blocks 13 and 23 so as to be in contact with the lower surfaces of the dielectric blocks 13 and 23 and the lower side of the reflector 30.
- the dielectric plate 50 also has an object of shielding a plasma force from a bolt (not shown) that fixes the dielectric blocks 13 and 23 to the lid 3.
- Gas is introduced.
- the pressure in the chamber 10 is normally maintained at about 0.1 to 50 Pa.
- the gas in the chamber 10 is ionized and dissociated, and the substrate S to be processed is placed in or near the plasma, thereby forming a film, etching, and etching.
- a plasma treatment such as a process is performed.
- a process for generating surface wave excited plasma by the plasma source 10 will be described.
- the microwave oscillated from the microwave generator 11 propagates through the inside of the microwave waveguide 12 and is adjusted to the desired state by adjusting with the matching unit l ie and the termination coupler 12b.
- a wave is formed.
- the microwave passes through the slot antenna 12c arranged at a predetermined position, and is sequentially radiated to the dielectric block 13 and the dielectric plate 50, and in the very initial stage of plasma generation, the microwave power in the chamber 10 is emitted.
- Gas is ionized and dissociated to generate plasma P.
- the microwave becomes a surface wave SW and propagates along the surface of the dielectric plate 50 and spreads over the entire area.
- the energy of the surface wave SW excites the gas in the chamber 10 to generate the surface wave excited plasma P. Generated.
- surface wave excitation plasma P is generated by the same process.
- a surface wave excitation plasma P having a size approximately equal to the total area of the dielectric blocks 13 and 23 is generated as a body.
- Both the microwave propagating in the dielectric block 13 and the microphone mouth wave propagating in the dielectric block 23 are reflected by the reflector 30 and the side reflector 40, respectively, and are reflected by the reflector 30 and the side reflector 40, respectively.
- Standing waves corresponding to the enclosed areas are formed. Therefore, the standing wave mode of the surface wave SW can be uniformly formed in a large area, and as a result, the surface wave excited plasma P can be uniformly generated in a large area.
- the electromagnetic waves (microwaves) propagating in the dielectric blocks 13 and 23 are mutually guided as microwaves as reflected waves. It is possible to prevent the pipe from entering the pipe and to prevent the two surface waves SW from interfering with each other. That is, the plasma sources 10 and 20 can form the surface wave excitation plasma P having a predetermined plasma density and plasma distribution by independently controlling the microwave power without interfering with each other.
- the reflector 30 sufficiently fulfills the above function with a thickness of about 1 mm, so that the plasma sources 10 and 20 arranged side by side operate as a single large area plasma source. Since the reflector 30 is as thin as about 1 mm, a uniform surface wave-excited plasma P can be obtained according to the total area of the dielectric blocks 13 and 23 in which the plasma density does not decrease immediately below the reflector 30. .
- FIG. 4 is a diagram schematically showing the configuration of the plasma source of the SWP processing apparatus according to the embodiment of the present invention.
- Fig. 4 (a) shows the configuration with two plasma sources
- Fig. 4 (b) shows the configuration with three plasma sources.
- the microwave input from the microwave generator 11 to the microwave waveguide 12 is S1
- the output from the microwave waveguide 12 to the dielectric block 13 is Pl
- the microwave transmission loss is Similarly
- the microphone mouth wave input from the microwave generator 21 to the microwave waveguide 22 is S2
- the output from the microwave waveguide 22 to the dielectric block 23 is P2
- the microphone mouth wave propagation loss is If d2, then Equation 1 holds.
- Equation 1 Since the outputs PI and P2 are not affected by each other, and the losses dl and d2 are known to be specific to the microwave waveguides 12 and 22, the microwave power to be easily input from Equation 1 can be set.
- Equation 2 is similarly established.
- the microwave power can be easily set.
- Two plasma sources 10 and 20 are provided in the chamber 1, and the reflector 30 is disposed between the dielectric blocks 13 and 23 of the plasma sources 10 and 20, so that the inside of the dielectric blocks 13 and 23 is maintained. Since the interference of the propagating electromagnetic wave is prevented, the plasma sources 10 and 20 can maintain a predetermined performance. Therefore, the microwave power to be input can be controlled independently by the plasma sources 10 and 20.
- the dielectric plate 50 By disposing the dielectric plate 50 in contact with the lower surfaces of the dielectric blocks 13 and 23 and the lower side of the reflector 30, the contamination of the substrate S to be processed due to metal contamination from the reflector 30 is prevented. be able to.
- the dielectric plate 50 can be used as a protection plate for the dielectric blocks 13 and 23 that do not impair the formation of the surface wave SW, and it is only necessary to replace the dielectric plate 50. improves.
- the present invention is not limited to the above-described embodiment as long as the characteristics are not impaired.
- the dielectric plate 50 may be a small area covering only the reflection plate 30 if the purpose is only to prevent metal contamination from the reflection plate 30.
- the present invention is not limited to the substrate processing apparatus, and the present invention can also be applied to an apparatus that uses SWP as a sterilization / sterilization apparatus for medical instruments.
- the present invention can be applied to an apparatus in which a SWP generation chamber and a processing chamber are provided separately.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/910,202 US8018162B2 (en) | 2005-05-12 | 2006-04-26 | Surface wave excitation plasma processing system |
JP2007528217A JP4803179B2 (ja) | 2005-05-12 | 2006-04-26 | 表面波励起プラズマ処理装置およびプラズマ処理方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-139454 | 2005-02-12 | ||
JP2005139454 | 2005-05-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006120904A1 true WO2006120904A1 (ja) | 2006-11-16 |
Family
ID=37396414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/308732 WO2006120904A1 (ja) | 2005-05-12 | 2006-04-26 | 表面波励起プラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8018162B2 (ja) |
JP (1) | JP4803179B2 (ja) |
KR (1) | KR100885395B1 (ja) |
CN (1) | CN101099419A (ja) |
TW (1) | TW200640301A (ja) |
WO (1) | WO2006120904A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2921388A1 (fr) * | 2007-09-20 | 2009-03-27 | Air Liquide | Dispositif et procede de depot cvd assiste par plasma tres haute frequence a la pression atmospherique, et ses applications |
WO2012008521A1 (ja) * | 2010-07-15 | 2012-01-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
WO2012008523A1 (ja) * | 2010-07-15 | 2012-01-19 | 国立大学法人東北大学 | プラズマ処理装置 |
WO2012008525A1 (ja) * | 2010-07-15 | 2012-01-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6178140B2 (ja) * | 2013-07-10 | 2017-08-09 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置及びマイクロ波供給方法 |
JP6356415B2 (ja) * | 2013-12-16 | 2018-07-11 | 東京エレクトロン株式会社 | マイクロ波プラズマ源およびプラズマ処理装置 |
KR101723190B1 (ko) * | 2015-07-07 | 2017-04-04 | 주식회사 아바코 | 증착장치용 마이크로웨이브 전송장치 |
KR101781290B1 (ko) * | 2016-02-29 | 2017-09-22 | 부산대학교 산학협력단 | 대면적 표면파 플라즈마 장치 및 이를 이용하여 전기전도성 다이아몬드 코팅방법 |
CN108878243B (zh) * | 2017-05-11 | 2020-08-21 | 北京北方华创微电子装备有限公司 | 表面波等离子体加工设备 |
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JP2004285396A (ja) * | 2003-03-20 | 2004-10-14 | Sekisui Chem Co Ltd | プラズマ処理装置およびその構成部材の接着方法 |
JP2005033100A (ja) * | 2003-07-10 | 2005-02-03 | Shimadzu Corp | 表面波励起プラズマ処理装置 |
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JP2932942B2 (ja) * | 1994-07-14 | 1999-08-09 | 住友金属工業株式会社 | プラズマ処理装置 |
JP3164195B2 (ja) * | 1995-06-15 | 2001-05-08 | 住友金属工業株式会社 | マイクロ波プラズマ処理装置 |
JP3164200B2 (ja) * | 1995-06-15 | 2001-05-08 | 住友金属工業株式会社 | マイクロ波プラズマ処理装置 |
WO1997036461A1 (fr) * | 1996-03-28 | 1997-10-02 | Sumitomo Metal Industries, Ltd. | Procede et dispositif de traitement plasmique |
JP3657744B2 (ja) * | 1996-07-08 | 2005-06-08 | 株式会社東芝 | プラズマ処理装置 |
JP3384795B2 (ja) * | 1999-05-26 | 2003-03-10 | 忠弘 大見 | プラズマプロセス装置 |
JP3668079B2 (ja) * | 1999-05-31 | 2005-07-06 | 忠弘 大見 | プラズマプロセス装置 |
JP3723783B2 (ja) | 2002-06-06 | 2005-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2004128346A (ja) * | 2002-10-04 | 2004-04-22 | Sekisui Chem Co Ltd | Cvd装置及び半導体装置の製造方法 |
TW200415726A (en) * | 2002-12-05 | 2004-08-16 | Adv Lcd Tech Dev Ct Co Ltd | Plasma processing apparatus and plasma processing method |
US20050000446A1 (en) * | 2003-07-04 | 2005-01-06 | Yukihiko Nakata | Plasma processing apparatus and plasma processing method |
US7584714B2 (en) * | 2004-09-30 | 2009-09-08 | Tokyo Electron Limited | Method and system for improving coupling between a surface wave plasma source and a plasma space |
-
2006
- 2006-04-24 TW TW095114515A patent/TW200640301A/zh unknown
- 2006-04-26 US US11/910,202 patent/US8018162B2/en not_active Expired - Fee Related
- 2006-04-26 KR KR1020077015157A patent/KR100885395B1/ko not_active IP Right Cessation
- 2006-04-26 CN CNA2006800018348A patent/CN101099419A/zh active Pending
- 2006-04-26 JP JP2007528217A patent/JP4803179B2/ja not_active Expired - Fee Related
- 2006-04-26 WO PCT/JP2006/308732 patent/WO2006120904A1/ja active Application Filing
Patent Citations (2)
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JP2004285396A (ja) * | 2003-03-20 | 2004-10-14 | Sekisui Chem Co Ltd | プラズマ処理装置およびその構成部材の接着方法 |
JP2005033100A (ja) * | 2003-07-10 | 2005-02-03 | Shimadzu Corp | 表面波励起プラズマ処理装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2921388A1 (fr) * | 2007-09-20 | 2009-03-27 | Air Liquide | Dispositif et procede de depot cvd assiste par plasma tres haute frequence a la pression atmospherique, et ses applications |
WO2009047442A1 (fr) * | 2007-09-20 | 2009-04-16 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Dispositif et procede de depot cvd assiste par plasma tres haute frequence a la pression atmospherique, et ses applications |
CN101802259B (zh) * | 2007-09-20 | 2013-02-13 | 乔治洛德方法研究和开发液化空气有限公司 | 用于大气压力下的甚高频等离子体辅助cvd的设备和方法及其应用 |
WO2012008521A1 (ja) * | 2010-07-15 | 2012-01-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
WO2012008523A1 (ja) * | 2010-07-15 | 2012-01-19 | 国立大学法人東北大学 | プラズマ処理装置 |
WO2012008525A1 (ja) * | 2010-07-15 | 2012-01-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
JP2012022916A (ja) * | 2010-07-15 | 2012-02-02 | Tohoku Univ | プラズマ処理装置及びプラズマ処理方法 |
JP2012021196A (ja) * | 2010-07-15 | 2012-02-02 | Tohoku Univ | プラズマ処理装置 |
JP2012022917A (ja) * | 2010-07-15 | 2012-02-02 | Tohoku Univ | プラズマ処理装置及びプラズマ処理方法 |
US9095039B2 (en) | 2010-07-15 | 2015-07-28 | Tohoku University | Plasma processing apparatus and plasma processing method |
Also Published As
Publication number | Publication date |
---|---|
TW200640301A (en) | 2006-11-16 |
JPWO2006120904A1 (ja) | 2008-12-18 |
KR100885395B1 (ko) | 2009-02-24 |
US8018162B2 (en) | 2011-09-13 |
US20090232715A1 (en) | 2009-09-17 |
CN101099419A (zh) | 2008-01-02 |
KR20070088765A (ko) | 2007-08-29 |
JP4803179B2 (ja) | 2011-10-26 |
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