WO2006061599A3 - Method of manufacturing carbon nanotubes - Google Patents

Method of manufacturing carbon nanotubes Download PDF

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Publication number
WO2006061599A3
WO2006061599A3 PCT/GB2005/004680 GB2005004680W WO2006061599A3 WO 2006061599 A3 WO2006061599 A3 WO 2006061599A3 GB 2005004680 W GB2005004680 W GB 2005004680W WO 2006061599 A3 WO2006061599 A3 WO 2006061599A3
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotubes
vapour deposition
cnt
chemical vapour
growth
Prior art date
Application number
PCT/GB2005/004680
Other languages
French (fr)
Other versions
WO2006061599A2 (en
Inventor
Takashi Uchino
Peter Ashburn
Groot Cornelis H De
Konstantinos N Bourdakos
David C Smith
Original Assignee
Univ Southampton
Takashi Uchino
Peter Ashburn
Groot Cornelis H De
Konstantinos N Bourdakos
David C Smith
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Southampton, Takashi Uchino, Peter Ashburn, Groot Cornelis H De, Konstantinos N Bourdakos, David C Smith filed Critical Univ Southampton
Publication of WO2006061599A2 publication Critical patent/WO2006061599A2/en
Publication of WO2006061599A3 publication Critical patent/WO2006061599A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)

Abstract

A method of manufacturing carbon nanotubes using a low-temperature growth process in a metal-catalyst free environment. The carbon nanotubes are grown using chemical vapour deposition on a material which contains the elements Ge and/or C. No metal catalysts are required to enable chemical vapour deposition of carbon nanotubes. The material containing Ge and/or C can be formed on a substrate by in­ situ growth by chemical vapour deposition or by any other method, such as a combination of vapour deposition of SiGe and C ion implantation. By not using metal catalysts for the CNT growth, the problems associated with these metals compromising CNT device performance are avoided. The method is capable of giving a high yield, and of producing predominantly single wall CNT. Using the method, a variety of CNT devices can be fabricated, such as transistors and field emitters. In an alternative embodiment, the carbon nanotubes are formed from Ge and/or C nanoparticles which are introduced into a C bearing gas stream.
PCT/GB2005/004680 2004-12-07 2005-12-07 Method of manufacturing carbon nanotubes WO2006061599A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0426863.7 2004-12-07
GBGB0426863.7A GB0426863D0 (en) 2004-12-07 2004-12-07 Method of manufacturing carbon nanotubes

Publications (2)

Publication Number Publication Date
WO2006061599A2 WO2006061599A2 (en) 2006-06-15
WO2006061599A3 true WO2006061599A3 (en) 2006-08-03

Family

ID=34073348

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2005/004680 WO2006061599A2 (en) 2004-12-07 2005-12-07 Method of manufacturing carbon nanotubes

Country Status (2)

Country Link
GB (1) GB0426863D0 (en)
WO (1) WO2006061599A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010504268A (en) * 2006-09-21 2010-02-12 アイメック Growth of carbon nanotubes using metal-free nanoparticles
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8304284B2 (en) 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8530318B2 (en) * 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8323439B2 (en) 2009-03-08 2012-12-04 Hewlett-Packard Development Company, L.P. Depositing carbon nanotubes onto substrate
CN109879275A (en) * 2019-01-30 2019-06-14 宁波大学 A kind of method that the concentration of combination germanium prepares graphene with ion implantation technique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020014322A (en) * 2000-08-17 2002-02-25 구자홍 Method for developing carbon nanotube without catalyst
WO2002034669A1 (en) * 2000-10-27 2002-05-02 Commissariat A L'energie Atomique Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes
US20030147801A1 (en) * 2001-03-14 2003-08-07 Masao Someya Process for producing aligned carbon nanotube films

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020014322A (en) * 2000-08-17 2002-02-25 구자홍 Method for developing carbon nanotube without catalyst
WO2002034669A1 (en) * 2000-10-27 2002-05-02 Commissariat A L'energie Atomique Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes
US20030147801A1 (en) * 2001-03-14 2003-08-07 Masao Someya Process for producing aligned carbon nanotube films

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
BOTTI S ET AL: "Carbon nanotubes and nanowires grown from spherical carbon nano-particles", CHEMICAL PHYSICS LETTERS ELSEVIER NETHERLANDS, vol. 355, no. 5-6, 8 April 2002 (2002-04-08), pages 395 - 399, XP002374076, ISSN: 0009-2614 *
BOTTI S ET AL: "Self-assembled carbon nanotubes grown without catalyst from nanosized carbon particles adsorbed on silicon", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 80, no. 8, 25 February 2002 (2002-02-25), pages 1441 - 1443, XP012031667, ISSN: 0003-6951 *
DATABASE WPI Section Ch Week 200268, Derwent World Patents Index; Class E36, AN 2002-633368, XP002374201 *
LAGALLY M G ET AL: "Directed assembly and strain engineering of SiGe films and nanostructures", ELECTROCHEMICAL SOCIETY PROCEEDINGS; SIGE: MATERIALS, PROCESSING, AND DEVICES - PROCEEDINGS OF THE FIRST SYMPOSIUM OCTOBER 3-8, 2004, vol. 7, 2004, pages 1153 - 1160, XP008062037 *
MAO J M ET AL: "Carbon nanotube formation on cobalt-implanted germanium substrate", JOURNAL OF MATERIALS SCIENCE LETTERS KLUWER ACADEMIC PUBLISHERS USA, vol. 18, no. 14, 15 July 1999 (1999-07-15), pages 1151 - 1153, XP001161087, ISSN: 0261-8028 *
PRABHAKARAN KUNIYIL ET AL: "Selective activation and passivation of nanoparticle catalysts through substrate mediation", LANGMUIR; LANGMUIR DEC 23 2003, vol. 19, no. 26, 23 December 2003 (2003-12-23), pages 10629 - 10631, XP002374075 *

Also Published As

Publication number Publication date
WO2006061599A2 (en) 2006-06-15
GB0426863D0 (en) 2005-01-12

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