WO2005125007A1 - 高周波素子及び電源供給素子、並びに通信装置 - Google Patents
高周波素子及び電源供給素子、並びに通信装置 Download PDFInfo
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- WO2005125007A1 WO2005125007A1 PCT/JP2005/010756 JP2005010756W WO2005125007A1 WO 2005125007 A1 WO2005125007 A1 WO 2005125007A1 JP 2005010756 W JP2005010756 W JP 2005010756W WO 2005125007 A1 WO2005125007 A1 WO 2005125007A1
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- power supply
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2463—Clamped-clamped beam resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0073—Integration with other electronic structures
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0075—Arrangements or methods specially adapted for testing microelecro-mechanical resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2426—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators in combination with other electronic elements
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H03H9/505—Mechanical coupling means for microelectro-mechanical filters
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
- H03H9/52—Electric coupling means
- H03H9/525—Electric coupling means for microelectro-mechanical filters
Definitions
- High frequency element power supply element, and communication device
- the present invention relates to a high-frequency element having a high-frequency signal element having an electrostatic drive type moving element and DC voltage supply means for supplying a DC noise voltage to the high-frequency signal element.
- the present invention also relates to a power supply element for supplying the high-frequency signal element with a DC bias voltage.
- the present invention relates to a communication device using a filter including the high-frequency element.
- a DC bias current is applied to the transducer.
- a DC noise voltage is supplied to a vibrator in a static state in which the power supply circuit is imprinted, for example, when power is supplied using a simple circuit, the voltage that fluctuates due to the instability of the power supply circuit or ⁇ A high voltage generated by any factor is applied to the pole that drives the vibrator (the driving portion of the vibrator or the lower electrode);
- the variation of the fe motion fe width causes the signal processing characteristics of the high-frequency signal element to fluctuate. If the voltage change is remarkable, the vibrator cannot be recovered due to factors such as the sticking of the drive part of the vibrator and the lower electrode, the occurrence of discharge between the moving part and the lower electrode, and the occurrence of abnormal vibration. Ready to go
- a high-frequency filter configured using MEMS (microelectromechanical system) elements has been proposed, but in such a high-frequency finoletor, when the DC bias voltage fluctuates, the oscillator Time variation of impedance occurs, and it is difficult to obtain good filter characteristics.
- MEM microelectromechanical system
- a semiconductor integrated circuit is configured by incorporating the s element into a digital circuit, the drive circuit for the digital signal processing part and the power supply for the MEMS element are shared, and the stability is not particularly enhanced. There is a concern that the characteristics of the MEMS device may fluctuate due to voltage fluctuations.
- High frequency filters using MEMS devices have been proposed by research institutions such as the University of Michigan (see Non-Patent Document 1).
- Non-Patent Document 1 C.T.-N guyen, Microchanchanica 1 componentsform lnt aturizedlow— powercommunications (invitedplenary), proceedings, 1999. , 18, 1999, pp. 48-77. Disclosure of the Invention
- the present invention provides a high-frequency device having a supply means for improving the stability of a DC bias voltage applied to an electrostatic drive type vibrator.
- Another object of the present invention is to provide a power supply element capable of supplying a stable DC bias voltage to the vibrator.
- the present invention provides a filter using the high-frequency element described above. It is intended to provide a communication device with improved reliability.
- the high-frequency element according to the present invention includes a high-frequency signal element including an electrostatically driven vibrator that is operated by applying a DC bias voltage, and includes a pad that supplies a DC bias voltage and the vibrator.
- a circuit having the function of stabilizing the DC bias voltage is added to this configuration.
- a power supply element is a power supply element for driving a high-frequency signal element including a driving type vibrator that is operated by applying a DC bias voltage, and stabilizes a DC bias voltage.
- the configuration is such that a circuit having a function is added.
- a communication device is a communication device provided with a filter for limiting a band of a transmission signal and / or a reception signal.
- an electrostatic drive type vibrator operated by applying a DC bias voltage is used as a finator.
- a circuit having a function of stabilizing the DC bias voltage is added between the pad that supplies the DC / bias voltage and the electrostatic drive type vibrator.
- ⁇ ⁇ ⁇ By supplying a stable DC bias voltage to the electrostatic drive type vibrator, it is possible to suppress the time variation of the output high frequency signal. Surge voltage) can prevent the destruction of the vibrator.
- a DC bias voltage is stabilized between the electrostatic drive type coupling 465- element which comprises a filter, and the pad which supplies a DC bias voltage.
- the electrostatic drive type coupling 465- element which comprises a filter
- the pad which supplies a DC bias voltage.
- 3A and 3B are conceptual diagrams illustrating a basic configuration of a high-frequency device according to the present invention.
- FIG. 2 is a conceptual diagram showing a second basic configuration of the high-frequency device according to the present invention.
- FIG. 3 is a conceptual diagram of the high-frequency device according to the present invention, which does not have the third basic configuration.
- the figure is a schematic view of an embodiment in which a filter is formed by one MEMS electrostatic drive type pendulum.
- the figure is a schematic diagram of another embodiment in which a finoleta is formed with one MEMS electrostatically driven pendulum.
- the figure is a schematic diagram of an embodiment in which a filter is formed by a plurality of MEMS electrostatically driven vibrators arranged in parallel.
- FIG. 7 is a schematic diagram of another embodiment in which a filter is formed by a plurality of MEMS electrostatically driven vibrators arranged in parallel.
- 8A and 8B are a plan view and a cross-sectional view showing a composite vibrator constituting a composite vibrator type filter used in the present invention.
- FIG. 9 is a plan view showing a parallel composite oscillator constituting a composite oscillator type filter applied to the present invention.
- FIG. 10 is a plan view showing a high-frequency device according to a first embodiment of the present invention.
- FIG. 11 is a cross-sectional view showing the first embodiment of the high-frequency device according to the present invention.
- 12A to 12B are manufacturing process diagrams (part 1) illustrating one embodiment of a method for manufacturing a high-frequency device according to the present invention.
- 13A to 13B are manufacturing process diagrams (part 2) illustrating one embodiment of a method for manufacturing a high-frequency device according to the present invention.
- 14A to 14B are manufacturing process diagrams (part 3) illustrating one embodiment of a method for manufacturing a high-frequency device according to the present invention.
- FIG. 15 is a manufacturing process diagram (part 4) illustrating one embodiment of a method for manufacturing a high-frequency device according to the present invention.
- FIG. 16 is an equivalent circuit diagram showing a second embodiment in which the high-frequency element according to the present invention is applied to a ladder-type filter having a one-stage configuration.
- FIG. 17 is a filter characteristic diagram showing the frequency dependence of the transmission characteristic value of the one-stage ladder filter of FIG.
- Fig. 18 is an enlarged view of the main part of Fig. 17 when the center frequency of the shunt oscillator group in the equivalent circuit of Fig. 16 is 92 MHz.
- Fig. 19 is an enlarged view of the main part of Fig. 17 when the center frequency of the shunt oscillator group in the equivalent circuit of Fig. 16 is 95 MHz.
- FIG. 20 is an enlarged view of the main part of FIG. 17 when the center frequency of the shunt oscillator group in the equivalent circuit of FIG. 16 is set to 96 MHz.
- FIG. 21 is an equivalent circuit diagram showing a third embodiment in which the high-frequency element according to the present invention is applied to a two-stage ladder filter.
- FIG. 22 is a filter characteristic diagram showing the frequency dependence of the transmission characteristic value of the two-stage ladder filter of FIG. 21.
- FIG. 23 is an equivalent circuit showing a fourth embodiment in which the high-frequency element according to the present invention is applied to a high-frequency resonator.
- FIG. 24 is a characteristic diagram showing the frequency dependence of the transmission characteristic value of the watt-frequency resonator of FIG.
- FIG. 25 is a circuit diagram showing an embodiment of a communication device according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
- a high-frequency element includes a high-frequency element including an electrostatic drive type vibrator that is operated by applying a DC bias voltage, and a package that supplies a DC bias voltage and a vibrator.
- a high-frequency signal element configured by adding a circuit having a function of stabilizing a DC bias voltage between the It is possible to adopt a configuration having a group of transducers for performing signal processing as circuit elements.
- the circuit having the function of stabilizing the current bias voltage is composed of a resistor inserted in series with the DC power supply line, and a capacitor inserted between the DC power supply line and the ground. be able to.
- a circuit having a function of stabilizing a DC noise voltage can be provided on the same substrate on which a high-frequency signal element is formed.
- the high-frequency signal element has a function of selecting a signal in a desired frequency band from the input high-frequency signal.
- the high-frequency signal element includes a reference signal of the high-frequency signal. It can be configured to have the function of generating
- a power supply element is a power supply element for driving a high-frequency signal element including an electrostatically driven vibrator operated by applying a DC bias voltage. It is configured by adding a circuit having the function of stabilizing the ground voltage.
- the communication device provides a ⁇ ⁇ f3 ⁇ 4 signal and / or
- a device having a fin notator for limiting the bandwidth of a communication signal has an electrostatic drive type vibrator that is operated by applying a dc noise voltage as a finolator.
- a filter having a circuit having a function of stabilizing a DC noise voltage is provided between a head for supplying a negative voltage and the actuator.
- the circuit having the function of stabilizing the DC bias voltage can be configured by a resistor inserted in series with the DC power supply line and a capacitor inserted between the terminal and the ground. it can.
- a circuit with a function to stabilize the DC bias voltage can be provided on the same substrate on which the filter is formed.
- a circuit having a function of stabilizing a DC bias voltage is provided between a pad for supplying a DC / bias voltage and an electrostatic drive type vibrator.
- the high-frequency element according to the embodiment of the present invention can be configured as a high-frequency filter, for example, a ladder type filter using an electrostatic drive type vibrator as the high-frequency signal element.
- a stable DC bias voltage to the driving portion of the vibrator serving as the high-frequency signal selector or the lower electrode, it is possible to suppress the time variation of the finalized high-frequency signal. It is out. Also, damage to the irrecoverable resonator due to surge voltage can be minimized.
- the high-frequency element according to the embodiment of the present invention can be configured as a reference signal generator by using an electrostatic drive element as the high-frequency signal element.
- the high-frequency element according to the embodiment of the present invention uses an electrostatic drive type vibrator as the high-frequency signal element, and mechanically couples the plurality of vibrators to form a composite vibrator-type finalizer. It can be. Then, by applying a stable DC bias voltage to the driving part or lower electrode of the vibrator constituting the composite vibrator-type fill, the time variation of the filtered high-frequency signal is suppressed. can do. Also, damage to the irrecoverable oscillator due to the surge voltage can be minimized. ⁇
- the DC bias voltage is applied to the electrostatic drive type vibrator through this power supply element.
- the DC bias voltage does not fluctuate, the fluctuation in the impedance of the vibrator is suppressed, and a high-frequency signal with a stable signal strength can be obtained.
- the DC noise voltage is stabilized between the electrostatic drive type vibrator constituting the filter and the pad for supplying the DC bias voltage.
- the time variation of the output high-frequency signal or the intermediate frequency signal can be suppressed.
- Communication devices can be provided.
- FIG. 1 shows a first basic configuration (concept) of a high-frequency device according to the present invention.
- the high-frequency element 1 includes a high-frequency signal element including an electrostatically driven oscillator 2 and a DC voltage supply for supplying a DC bias voltage to the oscillator 2.
- a DC power source 3 serving as a means.
- the vibrator 2 has a lower electrode, that is, an input electrode 5 and an output electrode 6 arranged at a required distance from each other on the surface of the substrate 4, and a vibrating portion or a rail that bridges the input / output electrodes 5 and 6 in a bridge shape.
- beams beam-type vibrating electrodes
- a ground plane 8 is formed on the back surface of the substrate 4, and the laser DC power supply 3 is connected between the beam 7 and the ground plane 8.
- a resistor Ra is inserted in series with the feed line 9 between the DC power source 3 and the beam 7, and a capacitance (shunt capacitance) C a is inserted between the feed line 9 and the ground plane 8, and these resistors R a a and a capacitor C a form a DC voltage stabilization circuit 10 for stabilizing the DC bias voltage.
- FIG. 2 shows a second basic configuration (concept) of the high-frequency device of the present invention.
- This high-frequency element 11 has a high-frequency signal element including a vibrator 2 having the same configuration as that shown in FIG. 1, and connects a DC power supply 3 to an input electrode 5 and a ground plane 8. Between the DC power supply 3 and the input electrode 5, a resistor Ra is inserted in series with the power supply line 9, and a capacitor C a is inserted between the power supply line 9 and the ground plane 8.
- a DC voltage stabilizing circuit 10 is formed by the capacitor and the capacitor C a. Beam 7 is left electrically floating.
- a DC bias voltage and a high-frequency signal are input to the input electrode 5 in a superimposed manner.
- the operation and effect of the vibrator 2 of the high-frequency element 11 are basically the same as those of the high-frequency element 1 of FIG.
- FIG. 3 shows a third basic configuration (concept) of the high-frequency device of the present invention.
- the high-frequency element 12 includes a high-frequency signal element including an electrostatic drive type oscillator 13 and a DC power supply 3 serving as a DC voltage supply unit for supplying a DC bias voltage to the oscillator 13. I do.
- Vibrator 1 Vibrator 1
- DC power supply 3 is connected between beam 16 and ground plane 17. In addition, DC power supply
- a resistor Ra is inserted in series into the line 9 between the beam 3 and the beam 16, and a capacitance (shunt capacitance) C a is inserted between the supply line 9 and the ground plane 17. And a capacitor C a form a DC voltage stabilization circuit 10 for stabilizing the DC bias voltage.
- the beam 16 becomes an input electrode, and the lower electrode 15 becomes an output electrode.
- the beam 1 When a DC bias voltage and a high-frequency signal are input to the beam 16 in a superimposed state, the beam 1
- the beam 16 resonates due to electrostatic force generated between the lower electrode 15 and the lower electrode (output electrode) 15, and a high-frequency signal of a desired frequency is output from the lower electrode 15. Since a stable DC bias voltage is supplied to the vibrator 13 through the DC voltage stabilizing circuit 10, it is possible to suppress the time variation of the output high-frequency signal. Also, suddenly It is possible to prevent the vibrator 13 from being destroyed by the applied high voltage pulse (surge voltage).
- the high-frequency signal element can be formed by a filter composed of a MEMS electrostatic drive type vibrator.
- a filter composed of a MEMS electrostatic drive type vibrator.
- an RC circuit DC voltage stabilizing circuit for stabilizing the DC voltage composed of the above-described resistor Ra and the capacitor C a.
- 10 is the distance between the DC power input pad to the filter, that is, the DC power input pad 22 connected to the DC power source, and the beam 7 of one vibrator 21.
- an RC circuit DC pressure stabilization circuit that stabilizes the DC voltage composed of the above-mentioned resistance Ra and capacitance C a
- 10 is the DC power input pad of the filter, that is, the E power input -y connected to the DC power supply 3 and the input electrode 5 of one vibrator 21. Can be connected between and.
- the RC circuit (DC voltage stabilization circuit) 10 that stabilizes the DC voltage composed of C a is connected to the DC power input pad to the finoleta, that is, the DC power supply 3, DC power input pad, 2
- the RC circuit (DC voltage stabilization circuit) 10 that stabilizes the DC voltage composed of C a is connected to the DC power input to the finalizer.
- the RC circuit (DC voltage stabilizing circuit) 10 for stabilizing the DC voltage described above can be formed on the same substrate as the filter.
- the above-mentioned RC circuit (DC voltage stabilization circuit) 10 is composed of the DC power input pad 22 to the filter in FIGS. 4 to 7 and the filter] It can also be formed as a part of a line formed between a DC power supply 3 for driving an electrically driven vibrator.
- the MEMS electrostatic drive type vibrator can be replaced with the configuration shown in FIG.
- the high-frequency signal element according to the present embodiment can be formed by a standard signal generator including a MEMS electrostatically driven oscillator.
- a standard signal generator including a MEMS electrostatically driven oscillator
- a a RC circuit DC voltage stabilization
- the DC power supply input pad for generating the standard signal that is, the DC connected to DC power supply 3 It can be connected between the power input pad 22 and the beam 7 of one vibrator 21.
- an RC circuit DC voltage stabilization circuit that stabilizes the DC voltage composed of the above-mentioned resistor Ra and capacitor C a 10 is the DC power input pad to the standard signal generator, that is, the DC power input pad 2 connected to the DC power source 3 as shown in Fig. 5 (however, the filter is replaced with a standard signal generator). 2 and the input electrode 5 of one vibrator 21 can be connected.
- a standard signal generator can be When manufactured using an EMS electrostatic drive type vibrator, the RC circuit (DC voltage stabilization circuit) 10 that stabilizes the DC voltage composed of the resistor Ra and the capacitor C a described above is similar to that shown in FIG. (However, replace the filter with a standard signal generator), the DC power input pad to the standard signal generator, that is, the DC power input pad 22 connected to the DC power supply 3, and the multiple oscillators 2 3, that is, it can be connected to the parallel beam 7.
- the RC circuit DC voltage stabilization circuit 10 that stabilizes the DC voltage composed of the resistor Ra and the capacitor C a described above is similar to that shown in FIG. (However, replace the filter with a standard signal generator), the DC power input pad to the standard signal generator, that is, the DC power input pad 22 connected to the DC power supply 3, and the multiple oscillators 2 3, that is, it can be connected to the parallel beam 7.
- a Circuit (DC voltage stabilization circuit) 10 is a DC power input pad to the standard signal generator, that is, the DC power input pad, that is, the filter is replaced with a standard signal generator, as shown in Fig. 7 (the filter is replaced with a standard signal generator). It can be connected between the DC power supply input pad 22 connected to the power supply 3 and the plurality of vibrators 23, that is, the input electrodes 5 thereof.
- the R C circuit (DC voltage stabilization circuit) 10 for stabilizing the direct voltage described above is formed on the same substrate as the standard signal generator.
- the above-mentioned RC circuit (DC voltage stabilization circuit) 10 is used to drive the DC power supply input pad 22 to the standard signal generator and the MEMS electrostatic drive type oscillator of the standard signal generator. It can also be formed as a part of a line formed between the DC power supply 3 and the DC power supply 3.
- the high-frequency signal element according to the present embodiment can be formed by a composite vibrator-type finoleta composed of a mechanical coupling, such as a MEMS electrostatic drive vibrator.
- Figure 8 shows the schematic configuration of the composite resonator that constitutes this composite resonator type filter.
- this composite oscillator 24 two beams 7C7A and 7B are arranged in parallel, and the two beams 7C7A and 7B are arranged in parallel.
- a part of A and B is mechanically connected by the connecting part 25,
- An input electrode 26 A composed of a lower electrode 26 is arranged below the beam 7 A, and an output electrode 26 B composed of the lower electrode 26 is arranged below the other beam 7 B.
- a plurality of such composite oscillators 24 are parallelized to output high-frequency signals in parallel.
- the composite vibrator 27 has an input electrode 26 composed of one lower electrode for one beam group 71 composed of a plurality of parallel beams 7A. A is arranged, and a beam group 7 2 composed of a plurality of parallel beams 7 B is arranged so as to be in parallel with the beam group 7 1.
- An output electrode 26B consisting of one lower electrode is placed, and ⁇
- a composite resonator type filter is combined with one composite resonator 2
- an R C circuit DC voltage stabilization circuit that stabilizes the DC voltage composed of the above-mentioned resistance Ra and capacitance C a
- the filter is replaced by a composite resonator type filter
- the DC power supply input pad-of the composite resonator type filter that is, the DC power supply 3 is connected. It can be connected between the direct power input pad 22 and the beam 7 [7A7B] of one composite oscillator 24.
- the composite resonator type finalizer is manufactured by using 1 ⁇ parallelized composite resonators 27 (see FIG. 9)
- the DC voltage composed of the above-described resistance Ra and capacitance C a is stabilized.
- the RC circuit (DC voltage stabilization circuit) 10 is the same as that shown in Fig. 4 (however, the filter is replaced with a composite resonator type filter), and the DC power input pad to the composite resonator type filter is That is, a DC power supply input pad 22 connected to the DC power supply 3 and a plurality of paralleled composite vibrators 27, It can be connected between the structured beams 71 and 72.
- the above-mentioned RC circuit (DC voltage stabilization circuit) 10 is composed of a DC power supply input pad 22 to a composite resonator type filter and a composite resonator of a composite resonator type filter. It can be formed as a part of a line formed between the DC power supply 3 for driving 24 and 27.
- the above-described RC circuit (DC voltage stabilizing circuit) 10 for stabilizing the DC voltage can be formed on the same substrate as the composite resonator type filter.
- the DC voltage stabilization circuit 10 is connected between the input electrode 26A of the resonator and the DC power supply input pad 22. It can be connected between them.
- the high-frequency signal element and the DC voltage supply means for supplying the DC bias voltage can be formed on the same substrate (in the same die).
- the high-frequency signal element and the DC voltage supply means for supplying the DC bias voltage may be formed on separate substrates and connected to each other.
- FIG. 10 plan view
- FIG. 11 schematic sectional view
- a MEMS electrostatic drive type vibrator is applied to a composite vibrator type filter configured by mechanical coupling.
- the composite resonator type filter 101 includes a plurality of composite resonators 103 and 104 on a common substrate 102 and beams of the resonators 103 and 104.
- a resistor R 1, R 2 for preventing leakage of high frequency (RF) signals between 106 and 107, a resistor Ra and a pair of comb-shaped electrodes 108 and 109 are placed at a required interval.
- a DC voltage stabilizing circuit (a so-called RC circuit) 10 composed of a capacitor C a formed by forming a capacitor, and an electrode pad for supplying a DC power supply, a so-called DC power input pad 22 are provided. Consisting of
- the substrate 102 for example, a substrate having an insulating film on the surface of a semiconductor substrate, a substrate such as an insulating substrate, and in this example, a substrate having the insulating film 122 on the surface of the semiconductor substrate 121 is used.
- a lower electrode that is, an input electrode 112 and an output electrode 113, are formed on the surface of the substrate 102, and a plurality of vibrating portions, that is, both ends, which straddle the input electrode 112 in a prism shape.
- Beams 106 of beam structure are arranged in parallel, and a plurality of (same or different as above) vibrating portions that straddle output electrode 113 in a bridge-like manner, that is, beams 10 of doubly supported structure 7 are arranged in parallel.
- a plurality of beams 1 1 2 straddling the input electrode 1 0 6 are connected to each other via a support (anchor) 1 1 4 of the beam 1 1 2 to a wiring section 1 1 7 formed on the substrate 10 2. Is done.
- a plurality of beams 107 crossing over the output electrodes 113 are also connected to each other via the supporting portions (anchors) 115 of the beams 113 and the wiring portions 110 formed on the substrate 102 with each other. Commonly connected to 8.
- shield electrodes surround the composite oscillator 103, 104, resistors 11, R2, DC voltage stabilization circuit 10, and DC power input pad 22.
- a conductive layer 1 19 serving as a (ground) plane is formed.
- a ground plane that is, a ground electrode 120 to which a ground potential is applied is formed on the back surface of the substrate 102 via an insulating film 123.
- each of the resistors R 1 and R 2 for preventing the leakage of the RF signal is connected to the wiring sections 117 and 118 of the two beam groups 106 and 107 via the wiring section 128.
- the other ends of the resistors R l and R 2 are commonly connected to the wiring section 125.
- one end of the resistor Ra constituting the DC voltage stabilization circuit 10 is connected to the wiring portion 125, and the other end of the resistor Ra constitutes the capacitance C a via the wiring portion 129.
- One of the comb-shaped electrodes 108 is connected to a DC power input pad 22.
- the other comb-shaped electrode that constitutes the capacitance C a 109 is connected to the conductive layer 119 for shielding formed on the surface of the substrate 102 and, for example, through a through hole provided on the substrate 102 or through the side surface of the substrate.
- Through 6 is connected to the ground electrode 120 on the back of the substrate.
- the resonators 103, 101 are passed through the DC voltage stabilization circuit 10 including the resistance Ra and the capacitance C a. Since a DC bias voltage is applied to the beams 104 and 107 of the 04, it is possible to suppress the temporal fluctuation of the filtered high-frequency signal. In addition, damage to the vibrator due to surge voltage can be minimized.
- a MEMS device such as a high-frequency filter is incorporated into another semiconductor circuit, for example, a digital circuit to constitute a semiconductor integrated circuit.
- the present invention can also be applied to the case where voltage supply to the MS element and the digital circuit is performed using a common power supply means.
- a substrate 130 is prepared.
- an insulating film for example, a silicon oxide thin film (HDP film: High Density Plasma oxide film) and a silicon nitride film serving as an anti-etching film are formed on a high-resistance silicon (Si) wafer 13 1.
- a composite insulating film 132 composed of a silicon thin film (upper surface side) is formed to a required thickness, for example, a thickness of about 200 nm.
- a conductive polycrystalline silicon thin film (PDAS: Phosphorus doped) is formed on the composite insulating film 132.
- Amorphous silicon) 133 is formed to a required thickness, about 380 nm.
- Wiring section 13 8 [13 8 A, 13 8 B and the resistance Ra are buried between each other.
- a sacrificial layer such as a silicon oxide thin film (HDP) 13 9 is deposited. After that, the silicon oxide thin film
- 1 3 9 is flattened.
- it is flattened by chemical mechanical polishing (CMP), and the input / output electrodes 13 6, 13 7, wiring section 13 8 [1 38 A, 1
- a silicon oxide thin film (low-pressure TEOS) that serves as a sacrificial layer with a thickness corresponding to the distance between 13 6 and 13 7 and a beam to be formed later, in this example, about 50 nm in thickness.
- TEOS low-pressure TEOS
- a silicon oxide thin film serving as a sacrificial layer serving as a silicon oxide thin film serving as a sacrificial layer
- the surface of the surface including the through holes 144A and 142B is covered with a desired thickness of a phosphorus-doped polycrystalline silicon thin film (P
- a DAS film is formed, patterned into a beam shape, and, for example, notched by a dry etching method.
- Support part 1 4 6 A, 1 is formed, patterned into a beam shape, and, for example, notched by a dry etching method.
- a pattern 9 is formed by dry etching, and openings are formed between the wiring portion 13 A and the resistor Ra, the wiring portion in contact with the resistor Ra, and the portion of the capacitor C a. C, 142 D.
- the support portions 144 A and 144 B of the beam 144 are mechanically and electrically connected to the wiring portions 144 A, 142 B. Is done.
- a thin film for example, an A1-Si film, which becomes a connection wiring, a capacitance, and a DC power input pad, is formed, and a resist mask and a hydrogen fluoride solution ( Patterning is performed using DHF (Diluted HF) to form a capacitance C a of A 1 -Si film, connection wiring 148 and DC power input pad 150.
- DHF Diluted HF
- connection wire 1448a between the wiring portion 144A and the resistor Ra, a pair of comb-shaped electrodes constituting the capacitance C a, and an electrode pad 15 connected to one of the comb-shaped electrodes
- a connection wiring 1 48 b is formed between 0 and one of the comb-shaped electrodes and the resistor Ra.
- the silicon oxide thin film (HDP) 140 serving as a sacrificial layer is removed by this hydrogen fluoride solution (DHF), and the beam 144 and the input / output electrodes 13 6 and 13 A space 1 5 1 is formed between 7.
- DHF hydrogen fluoride solution
- the MEMS electrostatic drive type oscillator 152, the DC voltage stabilizing circuit 10 and the DC power input pad 150 are formed. Obtain 5 3 (see Figure 15).
- FIG. 2 is a diagram illustrating another embodiment of a high-frequency device according to the present invention.
- a high-frequency signal element that is operated by applying a DC noise voltage to a part of the high-frequency signal line is provided, and the impedance of the high-frequency signal line and the DC bias voltage are reduced. Impedance ⁇ between the impedance of the DC power supply wiring that supplies the voltage and the impedance
- the high-frequency element that suppresses signal leakage includes a high-frequency signal element that is operated by applying a DC bias voltage to a part of a high-frequency signal line, and a direct voltage supply that drives a high-frequency signal element. Means, and the impedance of the other wiring connected to the high-frequency signal line is irregular with respect to the impedance of the high-frequency signal line.
- a specific example of a high-frequency element that suppresses signal leakage is a high-frequency circuit block when a DC bias voltage is supplied to one or a plurality of high-frequency blocks (for example, a parallel oscillator). Is divided into weeks, and the interval between them is connected with an impedance that is different from the impedance of the RF signal line as viewed from the DC power supply that forms part of the RF signal line in the high-frequency circuit block.
- the DC power supply wiring is formed using such a connection method as described above, the signal line to which the DC bias voltage and the high-frequency signal are mixedly applied in the high-frequency circuit block passes through the DC power supply circuit.
- connection method ⁇ most good that can have a suppressing this minimizes leakage to block outside, although the child against the DC power feed line through b over Nono 0 pass filter, the resistance difference only Even so, a sufficient effect can be obtained.
- MEMS micro electro mechanical system
- the DC impedance of the S resonator is extremely large, and only a very small direct current flows through the DC power supply line.Therefore, a considerably large resistance, for example, a group of resonators of several M ⁇ and DC power supply Insert between wiring However, the voltage does not drop due to the resistance, and therefore, effective impedance mismatch can be realized.
- the present embodiment enables a stable supply of a DC bias voltage to a vibrator to a high-frequency element in which leakage can be suppressed by such impedance mismatch.
- FIG. 16 is an equivalent circuit of a second embodiment in which the high-frequency device according to the present invention is applied to a one-stage ladder filter.
- the high-frequency signal line 32 is formed of a microstrip line, and the high-frequency signal line 32 is connected in series between the input terminals T in and T out of the signal line 33.
- a vibrator 35 composed of a plurality of vibrators (vibrator groups) is connected, and a plurality of parallel vibrators are similarly connected between the output side of the series vibrator 35 and the ground line 34.
- a shunt oscillator 36 composed of an oscillator (oscillator group) is connected. The series vibrator 35 and the shunt vibrator 36 are configured to operate by supplying a DC bias voltage.
- a DC voltage supply means for example, a DC power supply circuit having a DC power supply circuit 37 and a DC power supply line 38 is provided. It is connected to a driving part that becomes a part of a signal line 33 described later of the element 35 and the shunt vibrator 36.
- the DC power supply circuit 37 for example, a circuit configuration in which AC is converted to a constant voltage / DC and supplied, or a circuit configuration in which DC is converted into a constant voltage / DC converted and supplied to DC is supplied. It is out.
- the impedance of the series oscillator 35 and the shunt oscillator 36 between the impedance of the signal line 33 from the DC power supply terminal side and the impedance of the DC power supply wiring 38 is set. Configured to have inconsistencies. That is, between the signal line 33 in the series oscillator 35 and the shunt oscillator 36 and the DC power supply wiring 38 Connect elements to form impedance mismatch.
- resistance elements R 1 and R 2 are used as this element.
- a resistance element R 1 is connected between the beam of the series oscillator 35 and the DC power supply wiring 38, and a resistor is connected between the beam of the shunt oscillator 36 and the DC power supply wiring 38.
- Element R2 is connected.
- a DC voltage stabilization circuit 10 consisting of a resistance Ra and a capacitance C a is connected between the DC power supply wiring 38 and the DC power supply input pad 22 connected to the DC power supply circuit 37. Is done. In this case, it is possible to omit the resistor R a and use the resistors R 1 and R 2 and the capacitor R a to form the DC voltage stabilization circuit 10 using the resistors R 1 and R 2.
- the series vibrator 35 and the shunt vibrator 36 are formed of MEMS electrostatically driven vibrators.
- This MEMS electrostatic drive type oscillator adopts the same configuration as that of FIGS. 1 and 2 described above, that is, the structure of the oscillator itself except for the circuit system.
- the series vibrator 35 in FIG. 16 is configured by paralleling a plurality of, for example, 40, individual MEMS electrostatically driven vibrators 2.
- the shunt vibrator 36 is configured by paralleling a plurality of, for example, 160 MEMS electrostatically driven vibrators 2.
- the resistive elements R 1 and R 2 connected between the beam forming a part of the signal line 33 and the DC feed line 38 are formed using, for example, a thin line made of a polycrystalline silicon film.
- R 1 and R 2 1 ⁇ .
- the characteristic impedance of the signal line 33 shown in Fig. 16 is designed to be the same as the combined impedance ⁇ of the shunt oscillator 36.
- the single-stage ladder-type high-frequency filter 31 of the second embodiment has a series A high-frequency circuit block, a DC power supply circuit 37, and a DC power supply block including a DC voltage stabilization circuit 10 and a DC power supply wiring 38 are provided. It is formed on the same semiconductor chip.
- FIGS. 17 to 20 show the filter characteristics of the one-stage ladder filter 31 shown by the equivalent circuit of FIG. That Shi Li co down semiconductors process ladder off I filter 3 1 configured with by Ri fabricated MEMS electrostatic drive type vibrator group in, ⁇ Dobante' click manufactured nets work analyzer 3 7 6
- the frequency dependence of the transmission characteristic value S 21 (S parameter) measured using 7 G is shown.
- DC 15 V was applied to the series oscillator (oscillator group) 35 and the shunt oscillator (oscillator group) 36 using a common power supply.
- the resonance frequency of the series vibrator (vibrator group) 35 is 98 MHz
- the center frequency of the shunt vibrator (vibrator group) 36 is 2 MHz and 3 MHz higher than those of the series vibrator. z, 6 MHz lower, 96 MHz, 95 MHz, and 92 MHz, respectively.
- Figure 17 shows the filter characteristics showing the shunt frequency dependence (the curves with different shunt frequencies shown in Figs. 18 to 20 overlapped).
- Figures 18, 19, and 20 show the main part A of Figure 17 when the center frequency of the shunt oscillator 36 is 96 MHz, 95 MHz, and 92 MHz, respectively. Shows the expanded frequency characteristics corresponding to.
- all the shunt frequencies exhibit almost the same curve without ghost (noise), and particularly the same curve at the resonance and anti-resonance peaks. It shows the expected frequency characteristics without noise.
- the effect of the shunt oscillator 36 can be observed only obscurely because the input impedance of the network analyzer is 50 ⁇ .
- M The impedance between the beam forming part of the signal line 33 and the DC power supply line 38 of the series oscillator 35 and shunt oscillator 36 formed of the EMS electrostatic drive type oscillator
- FIG. 21 is an equivalent circuit of a third embodiment in which the high-frequency device according to the present invention is applied to a two-stage ladder type finoletor.
- the ladder-type filter 61 includes a plurality of oscillators (oscillators) each of which is parallelized to a high-frequency signal line 32 constituted by a microstrip line as described above. Group), and shunt oscillators 661 and 662 each composed of a plurality of oscillators (oscillator groups) paralleled with each other.
- a ladder-type finolater consisting of That is, the series oscillator is connected between the input terminal T in and the output terminal T out of the signal line 33.
- a second ladder-type filter in which a shunt oscillator 62 is connected between the output side of the series oscillator 652 and the ground line 34 is provided.
- Each series vibrator 651, 652 and shunt vibrator 661, 66 2 is configured to operate by supplying a DC bias voltage.o Therefore, similar to the above description, a DC voltage supply means, for example, a DC power supply circuit having a DC power supply circuit 37 and a DC power supply line 38 is provided. Is provided from the DC power supply circuit 37 through the DC power supply circuit, that is, the DC power supply wiring 38, and the straight IJ vibrators 651, 652 and the shunt vibrator 661,
- a DC voltage stabilizing circuit 10 consisting of a resistance Ra and a capacitance C a is connected between 38 and the DC power input pad 22 connected to the DC power circuit 37. It is also possible to omit this person- ⁇ A port and the resistance Ra.
- the series vibrators 651, 652 and the shunt vibrators 661, 662 are the same as 3 ⁇ 4 3 ⁇ 4E (the MEMS electrostatic drive type vibrator 2.
- a resistive element R 3 is connected between the beam of the series vibrator 65 1 of the stage and the DC power supply wiring 38, and a resistance is provided between the beam of the shunt vibrator 66 1 and the DC power supply wiring 38.
- the element R 4 is connected.
- a resistive element R5 is connected between the beam of the second-stage series oscillator 652 and the DC power supply wiring 38, and the resistance element R5 is connected between the beam of the shunt oscillator 662 and the DC holoelectric wiring 38. Is connected to a resistance element R 6.
- the series vibrators 66 1 and 62 2 in FIG. 21 are configured by paralleling a plurality of, for example, 40 individual MEMS electrostatically driven vibrators 2.
- the shunt vibrators 66 1 and 62 2 are configured by paralleling a plurality of, for example, 160 MEMS electrostatically driven vibrators 2.
- the characteristic impedance of the signal line 33 shown in FIG. 21 is designed to be the same as the impedance ⁇ of the shunt oscillators 66 1 and 62 2.
- the high-frequency filter 61 includes a high-frequency circuit block including series vibrators 651 and 652 and shunt vibrators 661 and 62, and a DC power supply circuit.
- a DC power supply block including a DC voltage stabilizing circuit 10 and a DC power supply wiring 38 is formed on the same semiconductor chip.
- FIG. 22 shows the filter characteristics of the two-stage ladder filter 61 represented by the equivalent circuit of FIG.
- a ladder-type filter 61 composed of a group of MEMS beam-type vibrators manufactured by a silicon semiconductor process is used to convert an Advantech's network * analyzer 37
- S 21 S parameter
- DC 15 V was applied to the series oscillators (vibrator group) 651, 652 and the shunt oscillators (vibrator group) 661, 662 using a common power supply.
- the resonance frequency of the series oscillators (vibrator group) 651, 652 is 98 MHz
- the center frequency of the shunt oscillators (vibrator group) 661, 662 is The measurement was performed with the frequency set to 94 MHz, 4 MHz lower than that. As is evident from the characteristic curve in Fig. 22, the expected frequency characteristics without noise are shown.
- the only reason why the effects of the shunt oscillators 66 1 and 62 2 can be observed unclear is that the network analyzer
- the input impedance of the input impedance is 50 ⁇ .
- the damage to 652 and shunt oscillators 661 and 662 can be minimized.
- FIG. 23 is an equivalent circuit of the fourth embodiment in which the r3 ⁇ 4 frequency element according to the present invention is used as a watt frequency resonator.
- the high frequency resonator 71 according to the fourth embodiment has a A vibrator composed of a plurality of vibrators (vibrator group) paralleled between the input / output terminals T in and T out of the signal line 73 of the high-frequency signal line 72 composed of a trip line 7 5 is connected, and a DC power supply circuit 7 for operating the vibrator 7 5
- a mouth-to-pass finoletor 79 Connected and configured.
- a DC voltage stabilization circuit 1 consisting of a resistance Ra and a capacitance C a is connected between the DC power supply wiring 78 and the DC power supply input pad connected to the DC power supply circuit 77. 0 is connected.
- the vibrator 75 It is composed of the MEMS-driven vibrator 2 shown in Figs.
- the vibrator 75 in FIG. 23 is configured by paralleling a plurality of, for example, 50 MEMS beam-type vibrators 2 as described above.
- the characteristic impedance of the signal line 73 of the high-frequency signal line 72 is designed to be the same as the impedance Z s of the vibrator 75.
- C 1 indicates the stray capacitance of the DC power supply wiring 78 or the capacitance forming part of the low-pass circuit.
- FIG. 24 shows the resonance characteristics of the high-frequency resonator 71 represented by the equivalent circuit of FIG. That is, a high-frequency resonator 71 composed of a group of MEMS electrostatically driven beam-type vibrators manufactured by a silicon semiconductor process is connected to a network manufactured by Advantech Co., Ltd. The frequency dependence of the transmission characteristic value S21 (S parameter) measured using an analyzer 3767G is shown. A DC power supply circuit 77 incorporating a low-pass filter 79 was applied to the vibrator group, and a direct current of ⁇ 20 V was applied.
- the beam of the vibrator 75 which is a part of the signal line 73, was connected to the low-pass filter 79 of the DC power supply circuit 77 by an Au thin wire by the wire-bond method. As is evident from Fig. 24, a resonance curve with no noise and a peak near 98 MHz can be observed.
- a low-pass filter 79 is used as an element for effectively making the impedance mismatch, but an RC circuit, a resistance element, or the like may be used. You can also.
- a portion of the signal line 73 of the vibrator 75 formed of the MEMS electrostatic drive type vibrator is connected between the beam serving as a part of the signal line 73 and the DC power supply wiring 78.
- a single-pass filter 79 By connecting a single-pass filter 79 to the power supply, unnecessary reflection of the high-frequency signal through the DC power supply wiring 78 is suppressed, and the signal-to-noise ratio of the high-frequency signal at the resonance frequency can be improved.
- a DC bias voltage is applied to the vibrator 75 through the direct voltage stabilization circuit 10, time fluctuation of the resonated high-frequency signal can be suppressed. Damage to customers can be minimized.
- the present invention was applied to a ladder type filter or a resonator in which a plurality of MEMS electrostatically driven vibrators were formed by electrical coupling. It can be applied to a composite electrostatic drive oscillator type filter (see Figs. 8 and 9) composed of coupling.
- a plurality of composite vibrators can be installed in parallel, and high-frequency signals can be filtered in parallel. Then, a DC bias voltage to the vibrator or vibrator group constituting such a composite vibrator type filter is supplied in a state in which the impedance of the high-frequency signal line is inconsistent with that of the vibrator.
- the configuration is the same as that described above, for example, by supplying a DC bias voltage to the DC voltage stabilizing circuit 10 via the DC voltage stabilizing circuit 10.
- the high-frequency resonance # 5 according to the fifth embodiment also has the same operation and effect as described above.
- the present invention is applied to a high-frequency finoletor and a high-frequency resonator.
- a high-frequency switch using an electrostatic drive type MEMS element, a passive element such as a distributor, and a MEMS (micro mechanical system) Etc. can be applied.
- the high-frequency circuit block constituting them and the power supply circuit block for operating the high-frequency circuit block are formed by the same wafer. • It can be formed by forming on a single semiconductor chip.
- the high-frequency element of the present invention includes, for example, a semiconductor chip on which a high-frequency circuit block is formed, and a semiconductor chip on which the power supply circuit block is formed. Can be configured by connecting them with wires.
- the means for making the impedance mismatch may be inserted into the DC power supply circuit side or may be inserted into the high-frequency signal element side.
- the filter using the electrostatic drive type vibrator of each of the embodiments described above can be used as an r3 ⁇ 4 frequency (R F) filter, an intermediate frequency (IF) filter, or the like.
- communication is performed using an electromagnetic wave of a communication device including the filter of the above-described embodiment, that is, for example, a mobile phone, a wireless LAN device, a wireless transceiver, a television tuner, a fuji tuner, or the like.
- a communication device including the filter of the above-described embodiment, that is, for example, a mobile phone, a wireless LAN device, a wireless transceiver, a television tuner, a fuji tuner, or the like.
- a communication device including the filter of the above-described embodiment, that is, for example, a mobile phone, a wireless LAN device, a wireless transceiver, a television tuner, a fuji tuner, or the like.
- the transmission data of the I channel and the transmission data of the Q channel are converted to digital Z-analog conversion (DAC) 201 I and 201 I, respectively. Supply it to Q and convert it to an analog signal.
- the converted signal of each channel is To the filters 202 I and 202 Q to remove signal components other than the ⁇ 1Bi band, and to use the noise filters 200 I and 200
- a buffer amplifier 211 for each channel is used.
- a signal is mixed and modulated, and both mixed signals
- the frequency signal to be supplied to the mixers 2 12 I is shifted by 90 ° in the signal phase by the ⁇ phase shifter 2 13, so that the signals of the I channel and the Q channel Is to be quadrature modulated
- the output of the adder 214 is supplied to a power amplifier 204 via a noise amplifier 215, and is amplified so as to have a predetermined transmission power.
- the signal amplified by the power amplifier 204 is supplied to the antenna 207 via the transmission / reception switch 205 and the high frequency filter 206, and is supplied to the antenna 207.
- the high-frequency filter 206 is a band-nos filter that removes signal components other than the frequency band transmitted and received by the communication device.
- the configuration of the receiving system is as follows: a signal received by the antenna 207 is transmitted to the high-frequency section 2 through the high-frequency filter 206 and the transmission / reception switch 205.
- the received signal is amplified by a low noise amplifier (LNA) 221, and then the band, noise filter 22
- the frequency signals supplied from the channel selection PLL circuit 25 1 are mixed, the signal of a predetermined transmission channel is used as an intermediate frequency signal, and the intermediate frequency signal is used as the buffer amplifier 2.
- the signal is supplied to the intermediate frequency circuit 230 through the line 25.
- the intermediate frequency circuit 230 the supplied intermediate frequency signal is supplied to a band pass filter 232 through a buffer amplifier 231 so that a signal component outside the band of the intermediate frequency signal is supplied. Is removed, and the removed signal is supplied to an automatic gain adjustment circuit (AGC circuit) 233 to obtain a substantially constant gain signal.
- AGC circuit automatic gain adjustment circuit
- the supplied intermediate frequency signal is supplied to the mixers 242I and 242Q via the buffer amplifier 241, and the intermediate frequency PLL circuit 245 is supplied. Mixes the frequency signals supplied from 2 and demodulates the received I-channel and Q-channel signal components.
- the I signal mixer 242 1 is supplied with a frequency signal whose signal phase is shifted by 90 ° by the phase shifter 243, and is subjected to ⁇ -cross modulation. Demodulates the I-channel signal component and the Q-channel signal component.
- the demodulated I-channel and Q-channel signals are passed through buffer buffers 244 I and 244 Q, respectively, and are output to / from the respective channels. Supplied to the filters 253 I and 253 Q to remove signal components other than the signals of the I channel and Q channel, and remove the removed signal into an analog / digital converter (ADC). ) Supplied to 254 I and 254 Q, sampled and converted to digital data to obtain I channel reception data and Q channel reception data
- the communication device of the present embodiment it is possible to supply a stable DC bias voltage to the electrostatic drive type vibrator constituting the finoleta. In this way, the time variation of the output high-frequency signal or Z and intermediate frequency signals can be suppressed, and the breakage of the vibrator due to a suddenly applied high-voltage pulse (sashi pressure) can be prevented. It is possible to provide highly reliable communication devices.
- each filter Roh, down K - Nono 0 was configured as scan filter, also or only allowed Ru ⁇ one passage of • path • Huy Noreta frequency band below by a predetermined frequency, It may be configured as a noise-pass filter that passes only the frequency range above a predetermined frequency, and the filter having the configuration of each embodiment described above may be used for those finoleta.
- the transmission and reception are performed by a line communication device, but the transmission and reception are performed via a wired transmission path by a filter provided in the line communication device.
- the filter having the configuration of the above-described embodiment is used for the filter provided in the communication device that performs only the transmission process and the communication device and the reception device that performs only the reception process.
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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US11/570,642 US7893796B2 (en) | 2004-06-18 | 2005-06-07 | High frequency device, power supply device and communication apparatus |
EP05748142A EP1770859A4 (en) | 2004-06-18 | 2005-06-07 | HIGH FREQUENCY ELEMENT, POWER SUPPLY AND COMMUNICATION DEVICE |
CNA2005800266447A CN1993887A (zh) | 2004-06-18 | 2005-06-07 | 高频元件、电源供给元件及通信装置 |
KR1020067026453A KR101180595B1 (ko) | 2004-06-18 | 2005-06-07 | 고주파 소자 및 전원 공급 소자와 통신 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004181459A JP4470606B2 (ja) | 2004-06-18 | 2004-06-18 | 高周波素子、並びに通信装置 |
JP2004-181459 | 2004-06-18 |
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WO2005125007A1 true WO2005125007A1 (ja) | 2005-12-29 |
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PCT/JP2005/010756 WO2005125007A1 (ja) | 2004-06-18 | 2005-06-07 | 高周波素子及び電源供給素子、並びに通信装置 |
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US (1) | US7893796B2 (ja) |
EP (1) | EP1770859A4 (ja) |
JP (1) | JP4470606B2 (ja) |
KR (1) | KR101180595B1 (ja) |
CN (1) | CN1993887A (ja) |
TW (1) | TW200614666A (ja) |
WO (1) | WO2005125007A1 (ja) |
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CN1922755A (zh) * | 2004-07-29 | 2007-02-28 | 日立视听媒体股份有限公司 | 电容式mems元件及其制造方法、高频装置 |
JP5214169B2 (ja) * | 2007-05-17 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2010135614A (ja) * | 2008-12-05 | 2010-06-17 | Fujitsu Ltd | 可変容量素子 |
TWM378573U (en) * | 2009-09-15 | 2010-04-11 | Microelectronics Tech Inc | Low noise block converter |
JP5758648B2 (ja) * | 2010-02-24 | 2015-08-05 | 京セラ株式会社 | 携帯端末 |
JP2014053529A (ja) * | 2012-09-10 | 2014-03-20 | Toshiba Corp | 電子装置 |
JP5908422B2 (ja) * | 2013-03-19 | 2016-04-26 | 株式会社東芝 | Mems装置及びその製造方法 |
CN213342769U (zh) * | 2019-12-31 | 2021-06-01 | 华为机器有限公司 | 光发射组件、半导体光电子器件和设备 |
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2004
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- 2005-06-06 TW TW094118593A patent/TW200614666A/zh not_active IP Right Cessation
- 2005-06-07 KR KR1020067026453A patent/KR101180595B1/ko not_active IP Right Cessation
- 2005-06-07 WO PCT/JP2005/010756 patent/WO2005125007A1/ja active Application Filing
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- 2005-06-07 EP EP05748142A patent/EP1770859A4/en not_active Withdrawn
- 2005-06-07 CN CNA2005800266447A patent/CN1993887A/zh active Pending
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JP2003532320A (ja) * | 2000-04-20 | 2003-10-28 | ザ リージェンツ オブ ザ ユニバーシティ オブ ミシガン | 振動マイクロメカニカル素子列を利用して少なくとも1つの所望の出力周波数を有する信号を生成するための方法及び装置 |
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JP4470606B2 (ja) | 2010-06-02 |
JP2006005758A (ja) | 2006-01-05 |
KR101180595B1 (ko) | 2012-09-07 |
CN1993887A (zh) | 2007-07-04 |
KR20070017412A (ko) | 2007-02-09 |
TWI305977B (ja) | 2009-02-01 |
TW200614666A (en) | 2006-05-01 |
EP1770859A4 (en) | 2012-12-19 |
EP1770859A1 (en) | 2007-04-04 |
US7893796B2 (en) | 2011-02-22 |
US20080272749A1 (en) | 2008-11-06 |
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