WO2005083374A1 - 赤外線センサ及びその製造方法 - Google Patents
赤外線センサ及びその製造方法 Download PDFInfo
- Publication number
- WO2005083374A1 WO2005083374A1 PCT/JP2005/003118 JP2005003118W WO2005083374A1 WO 2005083374 A1 WO2005083374 A1 WO 2005083374A1 JP 2005003118 W JP2005003118 W JP 2005003118W WO 2005083374 A1 WO2005083374 A1 WO 2005083374A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- infrared
- semiconductor substrate
- substrate
- hole
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 225
- 239000004065 semiconductor Substances 0.000 claims description 112
- 239000012790 adhesive layer Substances 0.000 claims description 51
- 239000010409 thin film Substances 0.000 claims description 32
- 238000001514 detection method Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 230000002265 prevention Effects 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 15
- 230000006866 deterioration Effects 0.000 abstract description 7
- 230000006378 damage Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 115
- 238000005530 etching Methods 0.000 description 42
- 229910052710 silicon Inorganic materials 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 229910052782 aluminium Inorganic materials 0.000 description 26
- 239000010410 layer Substances 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- -1 # 7740 of Kojung Co. Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 241000652704 Balta Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 241000245665 Taraxacum Species 0.000 description 1
- 235000005187 Taraxacum officinale ssp. officinale Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Definitions
- the present invention relates to an infrared sensor and a method for manufacturing the same.
- thermopile-type infrared sensor As a conventional thermopile-type infrared sensor, the one shown in Patent Documents 13 to 13 below is known.
- a thermocouple is formed by adjacent polysilicon and aluminum, and an infrared ray that is incident is detected by an infrared detection unit using the thermocouple.
- thermopile is a thermopile in which thermocouples are arranged in a small area in series.
- Thermocouples are temperature sensors that use the principle of the Seebeck effect, in which when a circuit is made of two types of metal and the two junctions are kept at different temperatures, a thermoelectromotive force is generated and current flows.
- Thermocouples measure the thermoelectromotive force between a temperature measuring junction (hot junction) and a reference junction (cold junction), and
- the infrared sensor disclosed in Patent Document 1 is an example in which a thermocouple composed of a p-type semiconductor and an n-type semiconductor is formed on a cantilever. These measures the amount of infrared light incident on the infrared sensor from the electromotive force generated by the temperature difference between the hot junction and the cold junction of the thermocouple due to the Seebeck effect.By arranging a plurality of thermocouples, the infrared sensor High sensitivity has been achieved. An infrared sensor provided with an infrared filter is described in Patent Document 3.
- Patent Document 3 discloses an example in which an infrared sensor is formed on an insulating substrate.
- Patent Document 1 Japanese Patent No. 2663612
- Patent Document 2 JP-A-6-249708
- Patent Document 3 JP 2001-174324 A
- the present invention has been made in view of such a problem, and has as its object to provide an infrared sensor capable of improving characteristics and a method of manufacturing the same.
- an infrared sensor includes a semiconductor substrate having an infrared detection unit formed thereon, an infrared transmission substrate facing the semiconductor substrate, and a semiconductor substrate and the infrared transmission substrate.
- a bonding layer that partially intervenes and provides a space between these substrates, wherein the semiconductor substrate has a through hole at a position facing the bonding layer for extracting an electric signal from the infrared detection unit. It is characterized by
- the infrared light incident on the infrared sensor passes through the infrared transmitting substrate and is incident on an infrared detector such as a thermocouple.
- the infrared detector converts the incident infrared light into an electric signal. This electric signal is taken out through the through-hole.
- the infrared detecting section is disposed in a space formed by an adhesive layer interposed between the semiconductor substrate and the infrared transmitting substrate. Therefore, the response characteristic of the infrared detector to the temperature change is improved.
- the through-hole is provided at a position facing the adhesive layer. Therefore, even if a pressure difference between the inside and outside of the space occurs during, for example, mounting, the through-hole and its bottom are supported by the adhesive layer, and the through-hole and the insulating film formed therein are deteriorated or damaged. Is suppressed, and the characteristics of the infrared sensor are improved.
- a radius prevention wall for suppressing a radius of the infrared transmitting substrate toward the infrared detection unit be provided in the space.
- the radius prevention wall is provided in order to prevent such breakage and sensitivity deterioration.
- the height of the radius prevention wall from the semiconductor substrate is higher than the upper surface of the infrared detection unit. In this case, this comes into contact with the radius prevention wall, and the amount of radius of the infrared transmitting substrate is suppressed.
- the radius prevention wall is provided between the infrared detection units. Is preferred. In other words, when there are a plurality of infrared detectors, the size of the infrared transmitting substrate is increased. In this case, however, the amount of radius is suppressed entirely by providing a radius prevention wall between the infrared detectors. be able to.
- the infrared detecting section is formed on a membrane structure formed on the semiconductor substrate. In this case, the responsiveness of the infrared detecting section to a temperature change can be improved.
- a space between the semiconductor substrate and the infrared ray transmitting substrate via the adhesive layer is a vacuum.
- the transfer of thermal energy can be heat conduction, convection and radiation.
- the portion related to the heat conduction is prevented from escaping by forming the infrared detecting portion on a thin film that does not easily conduct heat.
- the infrared (heat) incident on the infrared detecting unit formed on the semiconductor substrate can escape to the space by convection. Therefore, detection with higher sensitivity is possible.
- higher sensitivity can be detected by providing an infrared reflective film made of metal or the like on the surface of the semiconductor substrate facing the infrared detector.
- the above-described infrared sensor having excellent characteristics can be manufactured by suppressing breakage and deterioration of the through-hole and the like at the time of forming the through-hole by supporting the adhesive layer.
- the characteristics can be improved, and the productivity can be improved at low cost.
- FIG. 1 is a side view of an infrared sensor according to an embodiment.
- FIG. 2 is a front view of the infrared sensor according to the embodiment (a plan view excluding the infrared-transmitting substrate having infrared sensor power).
- FIG. 3 is a bottom view of the infrared sensor.
- FIG. 4 is a cross-sectional view of the infrared sensor in FIG. 2 taken along line IV-IV.
- FIG. 5 is an enlarged view of a peripheral portion of a through hole P.
- FIG. 6 is a diagram for explaining a manufacturing process of the infrared detection unit.
- FIG. 7 is a diagram for explaining a process of attaching the infrared transmitting substrate FL.
- FIG. 8 is a view for explaining a step of forming a through hole P.
- FIG. 9 is a view for explaining a bump attaching step.
- FIG. 10 is a cross-sectional view of an infrared sensor having a through hole P formed by etching substantially perpendicularly to the back surface of the substrate.
- FIG. 11 is a plan view of an infrared sensor according to another embodiment, omitting an infrared sensor cover infrared transmitting substrate FL.
- FIG. 12 is a cross-sectional view of the infrared sensor shown in FIG. 11, taken along the line XII-XII.
- FIG. 13 is a cross-sectional view of an infrared sensor provided with a plurality of infrared detectors 4 and 6.
- FIG. 14 is an exploded perspective view of the infrared sensor according to the present embodiment, in which disassembled components are arranged.
- FIG. 1 is a side view of the infrared sensor according to the embodiment.
- FIG. 2 is a plan view of the infrared sensor excluding the infrared transmitting substrate.
- FIG. 3 is a bottom view of the infrared sensor.
- FIG. 4 is a cross-sectional view taken along the line IV-IV of the infrared sensor in FIG.
- FIG. 14 is an exploded perspective view of the infrared sensor according to the present embodiment, in which disassembled components are arranged.
- the support member having the membrane structure includes a semiconductor substrate 1 having a thin plate portion having a hollow portion 2 and a thin film (thermal insulating film) 3 for supporting and reinforcing the thin plate portion.
- the semiconductor substrate 1 also has a silicon substrate force.
- the back side of the infrared sensor is closed by the semiconductor substrate 1 and has etching holes 13 at four places of the passivation film 7 on the surface. That is, the hollow portion 2 is formed below the thin film 3.
- This infrared sensor has a structure in which the back side is closed by the semiconductor substrate 1, so that it is easy to die-bond to a support member such as a lead frame or a circuit board, and the mechanical strength is increased.
- the thin film 3 is made of a single layer of SiN, a single layer of SiO, or any of SiN, SiO 2, PSG, and BPSG.
- the thickness of a multi-layer film containing these materials is 0.1 to 5 m.
- a polysilicon film 4 doped with n-type or p-type impurities by 10 17 to 10 2 cm- 3 and an aluminum film 6 are laminated via an SiO film 5 serving as an insulating film. I have. And
- the polysilicon film 4 and the aluminum film 6 are connected by the opening holes of the SiO film 5,
- thermocouple The thin film 3 and the exposed surface of the thermocouple are covered with a passivation film 7 that also has a SiN force, and an infrared absorption film 8 is formed on the passivation film 7 above the hollow portion 2.
- a passivation film 7 that also has a SiN force
- an infrared absorption film 8 is formed on the passivation film 7 above the hollow portion 2.
- an SiO film 5 is interposed between the polysilicon film 4 and the aluminum film 6 except for an opening hole serving as a contact point between them, and a passivation film 7 exists on the aluminum film 6.
- the infrared absorbing film 8 is provided to capture infrared light as heat energy.
- Nozzle film 7 that can be used as a laminated film with high strength is made of SiO, PSG, BPSG,
- the infrared absorbing film 8 is made of black dandelion resin, which is mixed with black filler such as carbon filler (epoxy, silicone, acrylic, urethane). System, a polyimide system, etc.) or a black resist.
- black filler such as carbon filler (epoxy, silicone, acrylic, urethane). System, a polyimide system, etc.) or a black resist.
- the long laminated structure of the polysilicon film 4 and the aluminum film 6 is formed so as to extend from the upper portion of the outer edge of the semiconductor substrate 1 to the upper portion of the central hollow portion 2.
- the shape of the hollow portion 2 is rectangular (square or rectangular), and each laminated structure extends along four directions perpendicular to the four sides of the hollow portion 2.
- the polysilicon film 4 and the aluminum film 6 are stacked on the hollow portion 2, and the width of the aluminum film 6 is formed smaller than the width of the polysilicon film 4. Then, in the opening of the SiO film 5 in the region where the infrared absorption film 8 is formed, the laminated polysilicon film 4 and aluminum film 6
- thermocouples are connected in series, and the electromotive force generated by the Seebeck effect is taken out through a terminal 10.
- thermoelectric infrared detecting sections thermoelectric infrared detecting sections (thermopiles) 4 and 6. That is, the semiconductor substrate 1 is provided with an infrared detecting section. An infrared transmitting substrate FL made of a silicon substrate is opposed to the semiconductor substrate 1. The infrared transmitting substrate FL functions as an infrared transmitting filter. Alternatively, by adding an antireflection film to one or both surfaces of the infrared transmitting substrate, the transmittance can be improved, or a bandpass filter that transmits only a necessary wavelength can be formed.
- An adhesive layer AD is partially interposed between the semiconductor substrate (first silicon substrate) 1 and the infrared transmitting substrate (second silicon substrate) FL.
- the adhesive layer AD provides a space between the semiconductor substrate 1 and the infrared ray transmitting substrate FL.
- the thickness of the adhesive layer AD is set so as to be higher than the upper surface of the infrared absorbing film 8, and the gap between the infrared absorbing film 8 and the infrared detecting section and the surface of the infrared transmitting substrate FL facing the semiconductor substrate is set. A gap exists.
- the adhesive layer AD of the present example is exposed to silicon such as Pyrex (registered trademark) glass.
- the layer is capable of pole bonding.
- At least one of the semiconductor substrate (first silicon substrate) 1 and the infrared transmitting substrate (second silicon substrate) FL and the adhesive layer AD are anodically bonded.
- a concave portion may be formed on the inner surface of the infrared ray transmitting substrate FL facing the hollow portion 2.
- the periphery of the inner surface of the infrared ray transmitting substrate FL forms a convex portion, and the convex portion and the adhesive layer AD will be bonded.
- the adhesive layer AD is provided on the outer edge of the semiconductor substrate 1 and forms a rectangular annular frame.
- the adhesive layer AD is interposed between the outer edge of the semiconductor substrate 1 and the outer edge of the infrared transmitting substrate FL, and seals the internal space of the infrared sensor from the outside air.
- This internal space is preferably set in a vacuum state.
- the adhesive layer AD also has a borosilicate glass force containing an alkali metal such as # 7740 of Kojung Co., for example.
- the bonding of the adhesive layer AD is performed by anodically bonding the semiconductor substrate and the adhesive layer AD using an anodic bonding apparatus.
- the anodic bonding is performed at a low temperature of 400 ° C. or less.
- a force for applying a voltage of about 250 to 800 V between the semiconductor substrate 1 and the infrared transmitting substrate FL is relatively low, the above-mentioned thermal stress can be suppressed.
- the inner space of the infrared sensor is sealed with an inert gas such as nitrogen, xenon, krypton, or argon.
- an inert gas such as nitrogen, xenon, krypton, or argon.
- a getter material may be provided in the internal space between the semiconductor substrate 1 and the infrared transmitting substrate FL.
- the getter material a material containing barium, titanium, zirconium, or the like as a main component can be used.
- the infrared transmitting substrate FL is used together with the adhesive layer AD, there is an advantage that the mechanical strength of the infrared sensor is increased, so that the thickness of the semiconductor substrate 1 can be reduced. That is, after bonding the infrared-transmitting substrate FL, the back surface of the semiconductor substrate 1 is mechanically and chemically polished to thin the plate, thereby reducing the aspect ratio in the depth direction of the through hole P. You. In the thin plate drier process, dry etching or wet etching can be used in addition to mechanical polishing. When performing the process on the back side, the process is performed with the back side facing upward.
- the reduction of the aspect ratio by this thin plate is very useful, can shorten the formation time of the through hole P, and easily form the high quality insulating film Pi on the inner wall surface of the through hole P. become able to. That is, when the insulating film Pi is formed on the inner wall surface of the through hole P, the depth of the through hole P is small, and in the case, the insulating film Pi having good coverage and good quality is formed by a plasma CVD method or a sputtering method. become able to.
- the insulating film Pi formed on the inner wall surface of the through hole P can be favorably manufactured, and as a result, Improvements in infrared sensor characteristics are expected.
- the advantages of thinning are summarized below. 'Since the depth of the through hole P is shallow, the terminal (electrode pad) 10 and the contact electrode CE can be miniaturized and formed at a narrow interval.
- the depth of the through hole P is shallow, the coverage of the insulating film Pi can be improved.
- the depth of the through hole P is shallow, it becomes easy to apply a photoresist when forming the contact electrode CE, and the amount of blurring of the exposure pattern at the bottom of the through hole P in the photolithographic process is reduced.
- the infrared detectors 4 and 6 are electrically connected in series with different materials (aluminum, polysilicon) that generate thermoelectromotive force.
- Terminals (pads) 10 at both ends of the series connection circuit are formed on the thin film 3 of the semiconductor substrate 1.
- the semiconductor substrate 1 has a through hole P at a position facing the adhesive layer AD for taking out the output of the infrared detection unit from the terminal 10. That is, the outer edge of the semiconductor substrate 1, the terminal 10, the adhesive layer AD, and the outer edge of the infrared transmitting substrate FL are located on the axis of the through hole P.
- the terminals 10 are located at two corners of the semiconductor substrate 1 having a rectangular planar shape. Dummy terminals 10 'are provided at the remaining corners to improve the mounting stability of the infrared sensor.
- the through-hole P has a truncated pyramid shape, in which a bump B having a shape close to a sphere is arranged.
- the diameter of the through-hole P is tapered so that the force on the back side of the semiconductor substrate 1 also decreases toward the front side.
- one bump B may be arranged in one through hole P, or only one of the opening diameters is set to be much longer than the other, and the through hole P forms a groove, and a large number of grooves are formed in the groove.
- Bump B may be arranged.
- the aspect ratio of the hole depth to the opening diameter of the through hole P (hole depth Z opening diameter) is desirably 1 or less.
- the bump B has a portion that slightly protrudes from the through hole P of the semiconductor substrate 1 and is easily mounted on the circuit board.
- FIG. 5 is an enlarged view of a peripheral portion of the through hole P.
- an insulating film Pi having a SiO force is formed on the inner surface of the through-hole P.
- Bump B is an insulating film It is in contact with Pi.
- the insulating film Pi in the through hole P is continuous with the insulating film 9 covering the back surface of the semiconductor substrate 1.
- the bump B is connected to a terminal 10 via a contact electrode CE in a contact hole CH provided in the thin film 3.
- one bump B is connected to one of the aluminum film 6, the polysilicon film 4, the aluminum film 6, the polysilicon film 4, They are electrically connected in order, and are electrically connected to the other bump B via the polysilicon film 4, the wiring, and the other terminal 10.
- a dummy bump B 'as shown in FIG. 3 can be provided directly below the dummy terminal 10', similarly to the peripheral portion of the terminal 10.
- the insulating film Pi is not limited to SiO. PSG, BPSG, SiN, SiON, polymer
- It may be a single-layer insulating film such as one or a laminated film composed of them.
- the infrared light incident on the infrared sensor passes through an infrared transmission substrate (infrared transmission window) FL made of a silicon substrate coated with an antireflection film, and is incident on infrared detection units 4 and 6 such as thermocouples.
- the infrared detectors 4 and 6 convert the incident infrared light into an electric signal.
- the electric signal is taken out through the through hole P.
- the infrared detectors 4 and 6 are arranged in a space formed by the adhesive layer AD interposed between the semiconductor substrate 1 and the infrared transmitting substrate FL. Therefore, the response characteristics of the infrared detectors 4 and 6 to a temperature change are improved.
- the infrared detecting sections 4 and 6 are formed on a membrane structure composed of the thin film 3 formed on the semiconductor substrate 1 and have the hollow portion 2 below the thin film 3, so that The responsiveness to temperature changes of the parts 4 and 6 is further improved.
- the through-hole P is provided at a position facing the adhesive layer AD. Therefore, even if a pressure difference occurs inside and outside the space defined by the adhesive layer AD, the through hole P and its bottom are supported by the adhesive layer AD, and the through hole P and the through hole P are formed. The deterioration and damage of the insulating film Pi are suppressed, and the characteristics, yield, and productivity of the infrared sensor are improved.
- the polysilicon film 4 and the aluminum film 6 are formed by lamination, the arrangement area for one thermocouple is narrowed, so that the heat density is high. A couple can be placed. Also, the polysilicon film 4 and the aluminum
- thermopile pattern formed by laminating the membrane 6 has a three-layer structure, which improves mechanical support strength, and forms a mesa from the top of the thin film 3 above the hollow part 2 to the top of the extension of the semiconductor substrate 1. Therefore, the mechanical strength of the thin film 3 can be increased.
- the single mass of the infrared absorbing film 8 having a material strength having an adhesive force at the upper part of the thin film 3 on the upper part of the hollow part 2 fixes the thin film 3 and all of the thermopile pattern, the hollow part 2 Therefore, the mechanical strength of the region thinned by the thin film 3 above the hollow portion 2 can be further improved. Further, the infrared absorbing film 8 is formed so as to cover the hot junction 11 of the thermopile pattern, so that the heat generated by the infrared absorbing film 8 due to infrared absorption can be efficiently transmitted to the hot junction 11. Can be.
- the aluminum film 6 has a high thermal conductivity, so that the heat obtained at the hot junction is transmitted to the semiconductor substrate 1 and missed, and there is a possibility that the sensitivity of the infrared sensor may be reduced. Since it is thinly and thinly laminated on the film 4 with the SiO film 5 interposed therebetween,
- the second film 5 also has a thermal insulation function for transferring heat of the polysilicon film 4 to the aluminum film 6 which is merely an electrical insulation between the polysilicon film 4 and the aluminum film 6.
- infrared rays incident on the infrared absorption film 8 may be reflected by the aluminum film 6 formed below the infrared absorption film 8, which may lower the sensitivity of the infrared sensor.
- the aluminum film 6 is formed to be thin, reflection can be minimized, and the reflected infrared rays are further absorbed by the infrared absorption film 8, so that the sensitivity of the infrared sensor does not decrease.
- the shape of the hollow portion 2 is not limited to a rectangular shape, but may be a circular shape or the like.
- a thermopile pattern can be formed according to the shape of the hollow portion.
- FIG. 6 is a diagram for explaining a manufacturing process of the infrared detection unit.
- a semiconductor substrate 1 (first silicon substrate) made of silicon is prepared.
- Semiconductor substrate A sacrificial layer which also has a polysilicon force is formed on the surface of 1. This sacrificial layer is removed in a later step, and forms the upper space DL of the hollow part 2. That is, before the sacrificial layer is etched, the upper space DL is filled with the sacrificial layer.
- the hollow portion 2 may be formed by etching only the sacrificial layer, or may be formed by re-etching the semiconductor substrate 1 of Balta in the thickness direction! / ⁇ . In this sense, the hollow portion 2 in FIG. 6 shows the semiconductor substrate 1 side by a dotted line.
- a thin film 3 made of an insulating layer is formed on the surface of the semiconductor substrate 1, and the exposed surfaces of the semiconductor substrate 1 and the sacrificial layer are covered with the thin film 3.
- the sacrifice layer is formed on the thin film 3 side of the semiconductor substrate 1 with substantially the same size as the hollow portion 2.
- the thin film 3 and the passivation film 7 are opened, an etching hole 13 is formed, and an infrared absorbing film 8 is formed on the thermopile pattern (see FIG. 2). It should be noted that the infrared absorbing film 8 does not exert any force even if it is formed after etching described later.
- a protective mask is formed on the back surface of the semiconductor substrate (first silicon substrate) 1 as necessary.
- the etching solution introduced into the etching hole 13 for example, a solution obtained by heating a mixed solution of ethylenediamine, pyrocatechol and water is used.
- the semiconductor substrate 1 is a (100) substrate, and the (100) plane is exposed.
- the etching solution is introduced into the etching hole 13 the etching solution penetrates into the sacrificial layer of polysilicon from the etching hole 13, and while etching the sacrificial layer or after etching all of the sacrificial layer, the semiconductor substrate 1 is etched according to the design. Start anisotropic etching.
- a membrane structure having the hollow portion 2 can be formed. Etching shall be performed at a depth of about 2 to 30 m. Alternatively, only the polysilicon sacrificial layer may be etched to form a membrane structure. In this case, the thickness of the polysilicon sacrificial layer is set to 0.2111 to 3111. The etching may be performed by using a hydrazine aqueous solution or the like in addition to the above-mentioned etching solution, or by dry etching using XeF or the like.
- FIG. 7 is a diagram for explaining a process of attaching the infrared transmitting substrate FL.
- an infrared transmitting group that also has a silicon power while increasing the mechanical strength.
- an adhesive layer AD made of Pyrex glass is formed on the outer edge of a semiconductor substrate (first silicon substrate) 1.
- An infrared transmitting substrate (second silicon substrate) FL is superimposed on the adhesive layer AD, and the adhesive layer AD and the infrared transmitting substrate (second silicon substrate) FL are anodically bonded in a vacuum or a nitrogen atmosphere.
- the formation of the adhesive layer AD may be performed before the etching. Further, the adhesive layer AD may be formed on the infrared transmitting substrate (second silicon substrate) FL side.
- the back surface of the semiconductor substrate (first silicon substrate) 1 is mechanically and mechanically polished to make the semiconductor substrate 1 thinner.
- the thickness of the outer edge portion of the thinned semiconductor substrate 1 is about 50 to 200 ⁇ m.
- FIG. 8 is a diagram for explaining a process of forming the through hole P.
- a mask 9 that is resistant to an etchant is formed on the back surface of the semiconductor substrate 1.
- the mask 9 also has a SiN force.
- an etching solution such as a KOH aqueous solution is introduced into the opening to etch the first semiconductor substrate 1 inward.
- anisotropic etching proceeds, and when the etching liquid reaches the thin film (thermal insulating film) 3, the etching stops, and a tapered through hole P is formed.
- the above-mentioned mask 9 may be removed as necessary, and then a new insulating film 9 may be formed on the back surface of the substrate.
- etching solution a potassium hydroxide aqueous solution, hydrazine, an anorekari aqueous solution such as EDP (EthyleneDiamine Pyrocatechol), TMAH (TetraMethyl Ammonium Hydroxide) can be used.
- EDP EthyleneDiamine Pyrocatechol
- TMAH TetraMethyl Ammonium Hydroxide
- High film thickness which can be formed by a CVD (Chemical Vapor Deposition) method or the like.
- CVD Chemical Vapor Deposition
- the infrared transmitting substrate (second silicon substrate) FL exists through the adhesive layer AD, so that the yield is lowered when the etching is completed and the film is not damaged after the completion. The process can proceed without the need.
- FIG. 9 is a diagram for explaining a bump electrode attaching process.
- an insulating layer Pi made of a passivation film is formed on the inner wall surface of the through hole P by a CVD method or a sputtering method. After sealing, the bottom of the insulating layer Pi and the corresponding An opening (contact hole CH) is formed in the region of the thin film 3 to expose the back surface of the terminal 10.
- a contact electrode (under bump metal) CE is formed on the exposed surface of the terminal 10 by electroless plating or the like.
- the bump B is arranged in the through hole P and is brought into contact with the contact electrode CE. Note that the end of the bump B opposite to the contact electrode CE protrudes from the back surface of the semiconductor substrate 1.
- the contact electrode CE can be formed by vapor deposition, sputtering, or the like in addition to the electroless plating.
- the material of the contact electrode CE may be a single metal layer of Ni, Au, Cr, Cu, Pt, etc., an alloy, or a laminated film thereof.
- a force for forming a bump B made of solder or the like so as to contact the contact electrode CE The bump B can be formed by a ball mounting method, a printing method, a plating method, a bonding method, or the like.
- the bump formation part is concave, preventing misalignment.
- the printing method it is possible to form a ball by embedding solder paste directly in the concave part with a squeegee and opening the riff It becomes.
- the above process is performed in a wafer state, and finally, a chip is completed by dicing the substrate bonding portion. That is, after the above-described bump arrangement step, a region on the semiconductor substrate or the infrared-transmitting substrate FL anodically bonded via the adhesive layer AD is set as a dicing line, and the dicing line is cut.
- the infrared sensors when a plurality of infrared sensors are formed, if the dicing line between the infrared sensors is cut after the formation of the through hole P, the infrared sensors can be separated into individual infrared sensors.
- the dicing since the bonding of the semiconductor substrate 1 and the infrared transmitting substrate FL and the formation of the through hole P have been completed, the dicing is used to separate the infrared sensors into chip-size individual infrared sensors, which is close to the final shipping form. The product is completed. Therefore, according to this manufacturing method, a small and thin infrared sensor can be manufactured at low cost and with high productivity.
- FIG. 10 is a cross-sectional view of an infrared sensor having a through hole P formed by etching substantially perpendicularly to the back surface of the substrate.
- This infrared sensor is the same as the above-described infrared sensor except for the shape of the through hole P.
- the formation method is almost the same as the alkaline wet etching, and the etching mask 9 is made of SiO or resist.
- a portion corresponding to the through hole of the semiconductor substrate 1 is dry-etched using a reactive ion etching (RIE) method as a metal layer such as aluminum or aluminum or a laminated film thereof.
- RIE reactive ion etching
- the etching is selectively stopped. If ICP-RIE using high-density plasma is used as RIE, the etching rate is high and etching can be performed almost vertically.
- the resist is removed by oxygen asshing or the like, and the process after the formation of the through hole is performed.
- the planar shape of the through hole P may be circular.
- FIG. 11 is a plan view of an infrared sensor according to another embodiment, omitting the infrared sensor substrate and the infrared transmitting substrate FL. The notation in this plan view conforms to FIG.
- FIG. 12 is a cross-sectional view of the infrared sensor shown in FIG.
- This infrared sensor is different from that shown in Fig. 2 only in the shape of the hollow portion 2 and the method of manufacturing that portion, and the other configuration and the manufacturing method are the same. In this case, since the hollow portion 2 is open to the back surface of the semiconductor substrate 1, the etching hole is omitted.
- the method of forming the hollow portion 2 will be explained. After forming the thin film 3, the thermopile pattern, the noise film 7, and the infrared absorbing film 8 on the surface of the semiconductor substrate 1 where the hollow portion 2 is not formed, the semiconductor substrate 1 On the surface (back surface) opposite to the surface on which the thin film 3 is formed, a strong mask such as SiN which is resistant to a silicon etchant is formed. Then, the mask is opened in a region where the hollow portion 2 is to be formed, and etching is performed while protecting the surface of the semiconductor substrate 1.
- a strong mask such as SiN which is resistant to a silicon etchant
- the opening force of the mask on the back surface also starts to be etched, and stops when the thin film 3 having resistance to the etchant is reached.
- Anisotropic etching can be performed by using, for example, a KOH aqueous solution as an etching solution and using a (100) substrate as the first semiconductor substrate 1. By this etching, a membrane structure having the hollow portion 2 shown in FIG. 12 can be formed.
- the etching of the back surface can be performed simultaneously with the formation of the through hole P with the back surface described in the first embodiment.
- An insulating film 9 is formed on the back surface of the semiconductor substrate 1 as necessary. Also, if necessary, the hollow portion 2 is opened at the back surface of the semiconductor substrate to provide a space. It may be closed by bonding a substrate or the like. This makes it possible to prevent the membrane from being damaged.
- the shape of the above-mentioned hollow portion 2 is not limited to a rectangular shape but may be a circular shape or the like, and a thermopile pattern can be formed according to the shape. When an etching hole is used, its shape and location can be changed by a thermopile pattern.
- FIG. 13 is a cross-sectional view of an infrared sensor including a plurality of the above-described infrared detectors 4 and 6.
- the infrared detecting units 4 and 6 are denoted by reference characters IRP, and the description of the detailed configuration is omitted.
- the infrared sensor has an internal space SP between the semiconductor substrate 1 and the infrared transmitting substrate FL.
- a radius prevention wall (spacer) STP for suppressing the radius of the infrared transmitting substrate FL toward the infrared detecting unit IRP is provided.
- the infrared transmitting substrate FL When the infrared transmitting substrate FL is bent, the infrared transmitting substrate FL comes into contact with the infrared detecting unit IRP, and the infrared detecting unit IRP is thermally connected to the substrate, whereby the sensitivity may be reduced or the device may be damaged.
- the radius prevention wall STP is provided to prevent a decrease in force sensitivity and breakage.
- the height of the radius prevention wall STP from the semiconductor substrate 1 is higher than the height of the infrared detection unit IRP.
- the number of infrared detection units IRP is plural, and each infrared detection unit IRP forms a pixel and independently outputs a signal. Shows only two.
- the radius prevention wall STP is formed on the thin film 3 having no hollow portion below, and is provided between the infrared detection units IRP.
- the sensor When there are a plurality of infrared detecting units IRP, the sensor becomes large in size together with the infrared transmitting substrate FL, but since the radius prevention wall STP is provided between the infrared detecting units IRP, the amount of radius is reduced. It can be suppressed overall.
- the formation position of the radius prevention wall STP is set in a region between the adjacent hollow regions 2.
- the chip size increases. If the chip size is large, the semiconductor substrate 1 and the infrared ray When the excess substrate FL is bonded, the size of the internal space SP in the plane direction increases.
- the infrared detector IRP on the substrate surface and the infrared transmitting substrate FL may come into contact with each other due to the warpage or external force of the wafer (for example, at the time of wafer bonding or mounting after chip bonding). Problems may occur, such as breakage, or loss of heat due to the escape of heat due to the contact of the infrared transmitting substrate FL.
- a radius prevention wall STP is provided between adjacent pixels or between pixels at a certain pixel interval.
- the size of the internal space SP in the planar direction can be reduced, and the contact between the infrared detecting unit IRP and the infrared transmitting substrate FL due to wafer warpage or external force can be prevented.
- the radius prevention wall STP can suppress element destruction due to pressure application during mounting such as flip chip bonding.
- the radius prevention wall STP is formed on a portion of the semiconductor substrate 1 where the radius prevention wall is to be formed, by Al, Ti, Au, Ni, Ti, Cr, W, Si, Pt, Cu, SiN, SiO, and BPSG. , PSG and other materials and their conversion
- the compound or alloy is deposited as a single layer or stacked layers by evaporation, sputtering, CVD, etc., and formed by patterning by etching or lift-off.
- a plating method may be used.
- a glass frit resin or a solder paste may be printed and cured.
- a photosensitive resin may be used.
- the main resin components of the light-sensitive resin include polyimide acrylate, PMMA (polymethyl methacrylate), silicone, and epoxy. Photosensitive resin can be formed at very low cost with few processes.
- the above-described method for manufacturing an infrared sensor includes the steps of forming a membrane structure composed of three thin films on the semiconductor substrate 1, and forming an infrared detecting unit IRP on the membrane structure.
- the adhesive layer AD is partially formed on the semiconductor substrate 1 or the infrared-transmitting substrate FL or on both substrates so that a space can be provided between the semiconductor substrate 1 and the infrared-transmitting substrate FL made of silicon.
- the through hole P is provided at a position facing the adhesive layer AD. According to this manufacturing method, damage and deterioration of the through-hole at the time of forming the through-hole, the bottom thereof, the insulating film Pi, and the like are prevented by the adhesive layer A. By suppressing by the support by D, the above-described infrared sensor having excellent characteristics can be manufactured.
- thermopile In addition to a thermopile, a porometer, a thermistor, a pyroelectric element, a metal element, a diode, a crystal oscillator, and a Golay cell can be used as the infrared detection unit IRP.
- the infrared transmitting substrate FL may be a silicon substrate or a substrate that transmits infrared light such as a germanium substrate or an infrared transmitting glass.
- the material of the adhesive layer AD may be low-melting glass, solder, metal (simple or alloy), resin, or the like. In order to increase the adhesive strength and reliability, a single layer, It may be a laminate.
- the above-mentioned bonding method is not limited to anodic bonding. It is sufficient to apply heat, pressure, ultrasonic waves, etc. as necessary to bond! ,.
- an adhesive layer for improving the adhesion between the adhesive layer AD and the substrate may be provided.
- the adhesive layer AD may be provided on the infrared transmitting substrate FL side to bond the force, or may be provided on both sides to perform the bonding. Further, the adhesive layer AD may be provided only on the infrared transmitting substrate FL side.
- a circuit for processing the output signal of the infrared detection unit is provided on the semiconductor substrate 1, and the input / output terminal of this circuit is provided.
- the bump electrode may be connected.
- a thermistor diode for monitoring the substrate temperature can be formed on the semiconductor substrate 1 and its terminals and bumps can be electrically connected.
- a light-shielding film such as a metal is provided on a portion of the semiconductor substrate opposite to the infrared ray transmitting substrate and without through holes. Is also good.
- an infrared reflective film made of metal or the like may be provided on the surface of the semiconductor substrate facing the infrared detector. This makes it possible to block infrared light incident from the semiconductor substrate side, including that from the semiconductor substrate itself.
- the present invention can be used for an infrared sensor and a method for manufacturing the same.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05719519.0A EP1719988B1 (en) | 2004-02-26 | 2005-02-25 | Infrared sensor and method of producing the same |
KR1020067019767A KR101118797B1 (ko) | 2004-02-26 | 2005-02-25 | 적외선 센서 및 그 제조 방법 |
US10/590,510 US7635605B2 (en) | 2004-02-26 | 2005-02-25 | Infrared sensor and method of producing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-052114 | 2004-02-26 | ||
JP2004052114A JP2005241457A (ja) | 2004-02-26 | 2004-02-26 | 赤外線センサ及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005083374A1 true WO2005083374A1 (ja) | 2005-09-09 |
Family
ID=34908659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/003118 WO2005083374A1 (ja) | 2004-02-26 | 2005-02-25 | 赤外線センサ及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7635605B2 (ja) |
EP (1) | EP1719988B1 (ja) |
JP (1) | JP2005241457A (ja) |
KR (1) | KR101118797B1 (ja) |
CN (1) | CN100552393C (ja) |
TW (1) | TWI336394B (ja) |
WO (1) | WO2005083374A1 (ja) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4944590B2 (ja) * | 2005-11-25 | 2012-06-06 | パナソニック株式会社 | 熱型赤外線検出装置の製造方法 |
JP4158830B2 (ja) * | 2005-11-25 | 2008-10-01 | 松下電工株式会社 | 熱型赤外線検出装置の製造方法 |
JP5250236B2 (ja) * | 2006-10-31 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
KR101447044B1 (ko) | 2006-10-31 | 2014-10-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
JP2008190992A (ja) * | 2007-02-05 | 2008-08-21 | Seiko Npc Corp | 赤外線センサ |
US7988794B2 (en) * | 2007-02-07 | 2011-08-02 | Infineon Technologies Ag | Semiconductor device and method |
DE102007024902B8 (de) * | 2007-05-29 | 2010-12-30 | Pyreos Ltd. | Vorrichtung mit Membranstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung |
EP2015046A1 (en) * | 2007-06-06 | 2009-01-14 | Infineon Technologies SensoNor AS | Vacuum Sensor |
JP5001788B2 (ja) * | 2007-10-29 | 2012-08-15 | 浜松ホトニクス株式会社 | 光検出装置 |
JP4997066B2 (ja) * | 2007-10-29 | 2012-08-08 | 浜松ホトニクス株式会社 | 光検出装置 |
JP2009135353A (ja) * | 2007-12-03 | 2009-06-18 | Panasonic Corp | 半導体装置及びその製造に使用する樹脂接着材 |
DE102007062688B3 (de) | 2007-12-17 | 2009-02-05 | Pyreos Ltd. | Vorrichtung mit einer abgeschirmten Sandwichstruktur zur Detektion von Wärmestrahlung und Verwendung der Vorrichtung |
JP2009174917A (ja) * | 2008-01-22 | 2009-08-06 | Oki Semiconductor Co Ltd | 赤外線検出素子、及び赤外線検出素子の製造方法 |
TWI384602B (zh) * | 2008-06-13 | 2013-02-01 | Unimicron Technology Corp | 嵌埋有感光半導體晶片之封裝基板及其製法 |
KR101008260B1 (ko) * | 2008-06-27 | 2011-01-13 | (주)엔아이디에스 | 적외선 센서 및 그 제조방법 |
JP5625233B2 (ja) * | 2008-10-30 | 2014-11-19 | 日産自動車株式会社 | 赤外線検出素子及びその製造方法 |
JP5409251B2 (ja) * | 2008-11-19 | 2014-02-05 | キヤノン株式会社 | 電気機械変換装置およびその製造方法 |
JP2010262862A (ja) * | 2009-05-08 | 2010-11-18 | Panasonic Corp | 非水電解質二次電池用負極活物質、その製造方法、および非水電解質二次電池 |
JP4951088B2 (ja) * | 2009-05-21 | 2012-06-13 | 韓國電子通信研究院 | 輻射熱を熱源として利用する熱電素子及びその製造方法 |
JP5348405B2 (ja) * | 2009-05-27 | 2013-11-20 | 株式会社ザイキューブ | 半導体イメージセンサの製造方法 |
FR2946777B1 (fr) * | 2009-06-12 | 2011-07-22 | Commissariat Energie Atomique | Dispositif de detection et/ou d'emission de rayonnement electromagnetique et procede de fabrication d'un tel dispositif |
US8304851B2 (en) * | 2010-03-30 | 2012-11-06 | Texas Instruments Incorporated | Semiconductor thermocouple and sensor |
JP5558189B2 (ja) * | 2010-04-26 | 2014-07-23 | 浜松ホトニクス株式会社 | 赤外線センサ及びその製造方法 |
JP5824690B2 (ja) * | 2010-04-26 | 2015-11-25 | 株式会社エッチ.エム.イー | 温度センサ素子及びこれを用いた放射温度計 |
US8608894B2 (en) * | 2010-11-23 | 2013-12-17 | Raytheon Company | Wafer level packaged focal plane array |
US20150122999A1 (en) * | 2010-12-22 | 2015-05-07 | Seiko Epson Corporation | Thermal detector, thermal detection device, electronic instrument, and thermal detector manufacturing method |
JP2012195514A (ja) * | 2011-03-17 | 2012-10-11 | Seiko Epson Corp | 素子付き基板、赤外線センサー、および貫通電極形成方法 |
JP5736906B2 (ja) | 2011-03-30 | 2015-06-17 | 三菱マテリアル株式会社 | 赤外線センサ |
FR2982073B1 (fr) * | 2011-10-28 | 2014-10-10 | Commissariat Energie Atomique | Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique |
JP2013131600A (ja) * | 2011-12-21 | 2013-07-04 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、センサー及び電子機器 |
JP6291760B2 (ja) * | 2012-09-18 | 2018-03-14 | 株式会社リコー | 熱電対、サーモパイル、赤外線センサー及び赤外線センサーの製造方法 |
JP2014139545A (ja) * | 2013-01-21 | 2014-07-31 | Panasonic Corp | 赤外線検出素子 |
WO2014112392A1 (ja) | 2013-01-21 | 2014-07-24 | パナソニック株式会社 | 赤外線検出素子、赤外線検出器及び赤外線式ガスセンサ |
JP6079327B2 (ja) * | 2013-03-14 | 2017-02-15 | オムロン株式会社 | 赤外線センサおよび赤外線センサチップ |
JP2014178172A (ja) * | 2013-03-14 | 2014-09-25 | Omron Corp | 赤外線センサおよびその製造方法 |
US9489607B2 (en) * | 2013-05-17 | 2016-11-08 | Infineon Technologies Ag | Semiconductor device and an identification tag |
US10119865B2 (en) * | 2013-06-10 | 2018-11-06 | Panasonic Intellectual Property Management Co., Ltd. | Infrared sensor having improved sensitivity and reduced heat generation |
US9423304B2 (en) | 2014-03-27 | 2016-08-23 | Panasonic Intellectual Property Management Co., Ltd. | Infrared ray detecting element and infrared ray detector including the same |
CN104409624B (zh) * | 2014-12-05 | 2016-09-07 | 上海新微技术研发中心有限公司 | 封装方法和半导体器件 |
TWI615985B (zh) | 2015-12-25 | 2018-02-21 | 財團法人工業技術研究院 | 光感測元件及其製造方法 |
TWI613428B (zh) * | 2016-08-16 | 2018-02-01 | 菱光科技股份有限公司 | 高真空的紅外線感測器及其封裝方法 |
WO2018193825A1 (ja) * | 2017-04-17 | 2018-10-25 | パナソニックIpマネジメント株式会社 | 焦電センサ素子及びこれを用いた焦電センサ |
CN109599445A (zh) * | 2018-12-26 | 2019-04-09 | 西南技术物理研究所 | 一种背光半导体光电类芯片及其互连方法 |
CN114097086A (zh) * | 2019-07-09 | 2022-02-25 | 海曼传感器有限责任公司 | 在真空填充的晶片级壳体中生产热红外传感器阵列的方法 |
TWI712105B (zh) * | 2019-10-31 | 2020-12-01 | 新唐科技股份有限公司 | 半導體裝置與其製造方法 |
TWI795245B (zh) * | 2022-03-23 | 2023-03-01 | 鴻海精密工業股份有限公司 | 紅外線偵測結構 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6119734U (ja) * | 1984-07-10 | 1986-02-05 | タツモ株式会社 | サ−モパイル |
JPH04158584A (ja) * | 1990-10-22 | 1992-06-01 | Matsushita Electric Works Ltd | 赤外線検出素子 |
JPH05235415A (ja) * | 1992-02-19 | 1993-09-10 | Murata Mfg Co Ltd | 赤外線センサ |
JPH05283757A (ja) * | 1992-03-30 | 1993-10-29 | New Japan Radio Co Ltd | 光電変換素子 |
JPH0581666U (ja) * | 1992-03-31 | 1993-11-05 | シチズン時計株式会社 | チップ型赤外線センサ |
JPH06249708A (ja) | 1993-02-23 | 1994-09-09 | Nissan Motor Co Ltd | 赤外線センサおよびその製造方法 |
WO1995017014A1 (en) * | 1993-12-13 | 1995-06-22 | Honeywell Inc. | Integrated silicon vacuum micropackage for infrared devices |
JP2663612B2 (ja) | 1989-02-09 | 1997-10-15 | 日産自動車株式会社 | 赤外線センサ |
JP2000028463A (ja) * | 1998-07-10 | 2000-01-28 | Teijin Seiki Co Ltd | 気密封止構造およびその製造方法 |
US6236046B1 (en) | 1997-10-28 | 2001-05-22 | Matsushita Electric Works, Ltd. | Infrared sensor |
JP2001174324A (ja) | 1999-12-17 | 2001-06-29 | Tdk Corp | 赤外線検出器および赤外線検出装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2567151B1 (fr) | 1984-07-04 | 1986-11-21 | Ugine Aciers | Procede de fabrication de barres ou de fil machine en acier inoxydable martensitique et produits correspondants |
JPH0581666A (ja) | 1991-09-19 | 1993-04-02 | Hitachi Ltd | 磁気記録媒体の製造方法 |
JP3405102B2 (ja) * | 1996-12-19 | 2003-05-12 | 株式会社村田製作所 | 半田バンプ接続素子の製造方法 |
JP2001319997A (ja) * | 2000-05-10 | 2001-11-16 | Mitsubishi Electric Corp | 半導体パッケージおよび半導体チップ |
JP4389394B2 (ja) | 2001-02-23 | 2009-12-24 | パナソニック電工株式会社 | 焦電型赤外線検知素子及びその製造方法 |
JP4009046B2 (ja) | 2001-04-10 | 2007-11-14 | 浜松ホトニクス株式会社 | 赤外線センサ |
SG161099A1 (en) * | 2001-08-24 | 2010-05-27 | Schott Ag | Method for producing electronic components |
JP2003270047A (ja) | 2002-03-15 | 2003-09-25 | Denso Corp | 赤外線センサ |
JP4271904B2 (ja) * | 2002-06-24 | 2009-06-03 | 富士フイルム株式会社 | 固体撮像装置の製造方法 |
US7429495B2 (en) * | 2002-08-07 | 2008-09-30 | Chang-Feng Wan | System and method of fabricating micro cavities |
JP2005019966A (ja) * | 2003-06-06 | 2005-01-20 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP4228232B2 (ja) * | 2005-02-18 | 2009-02-25 | 日本電気株式会社 | 熱型赤外線検出素子 |
-
2004
- 2004-02-26 JP JP2004052114A patent/JP2005241457A/ja active Pending
-
2005
- 2005-02-25 US US10/590,510 patent/US7635605B2/en not_active Expired - Fee Related
- 2005-02-25 TW TW094105789A patent/TWI336394B/zh not_active IP Right Cessation
- 2005-02-25 KR KR1020067019767A patent/KR101118797B1/ko active IP Right Grant
- 2005-02-25 CN CNB2005800038563A patent/CN100552393C/zh not_active Expired - Fee Related
- 2005-02-25 EP EP05719519.0A patent/EP1719988B1/en not_active Expired - Fee Related
- 2005-02-25 WO PCT/JP2005/003118 patent/WO2005083374A1/ja active Application Filing
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6119734U (ja) * | 1984-07-10 | 1986-02-05 | タツモ株式会社 | サ−モパイル |
JP2663612B2 (ja) | 1989-02-09 | 1997-10-15 | 日産自動車株式会社 | 赤外線センサ |
JPH04158584A (ja) * | 1990-10-22 | 1992-06-01 | Matsushita Electric Works Ltd | 赤外線検出素子 |
JPH05235415A (ja) * | 1992-02-19 | 1993-09-10 | Murata Mfg Co Ltd | 赤外線センサ |
JPH05283757A (ja) * | 1992-03-30 | 1993-10-29 | New Japan Radio Co Ltd | 光電変換素子 |
JPH0581666U (ja) * | 1992-03-31 | 1993-11-05 | シチズン時計株式会社 | チップ型赤外線センサ |
JPH06249708A (ja) | 1993-02-23 | 1994-09-09 | Nissan Motor Co Ltd | 赤外線センサおよびその製造方法 |
WO1995017014A1 (en) * | 1993-12-13 | 1995-06-22 | Honeywell Inc. | Integrated silicon vacuum micropackage for infrared devices |
US6236046B1 (en) | 1997-10-28 | 2001-05-22 | Matsushita Electric Works, Ltd. | Infrared sensor |
JP2000028463A (ja) * | 1998-07-10 | 2000-01-28 | Teijin Seiki Co Ltd | 気密封止構造およびその製造方法 |
JP2001174324A (ja) | 1999-12-17 | 2001-06-29 | Tdk Corp | 赤外線検出器および赤外線検出装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1719988A4 |
Also Published As
Publication number | Publication date |
---|---|
JP2005241457A (ja) | 2005-09-08 |
CN100552393C (zh) | 2009-10-21 |
US7635605B2 (en) | 2009-12-22 |
CN1914490A (zh) | 2007-02-14 |
US20070278605A1 (en) | 2007-12-06 |
EP1719988A1 (en) | 2006-11-08 |
KR20070015527A (ko) | 2007-02-05 |
EP1719988B1 (en) | 2013-09-04 |
KR101118797B1 (ko) | 2012-03-20 |
TWI336394B (en) | 2011-01-21 |
TW200540401A (en) | 2005-12-16 |
EP1719988A4 (en) | 2010-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005083374A1 (ja) | 赤外線センサ及びその製造方法 | |
JP7045430B2 (ja) | ウェハレベルパッケージ内の熱赤外線センサアレイ | |
US8519336B2 (en) | Infrared sensor and infrared sensor module | |
US20080164413A1 (en) | Infrared Sensor | |
US9759613B2 (en) | Temperature sensor device and radiation thermometer using this device, production method of temperature sensor device, multi-layered thin film thermopile using photo-resist film and radiation thermometer using this thermopile, and production method of multi-layered thin film thermopile | |
JP5425207B2 (ja) | 赤外線撮像素子 | |
JP2000298063A (ja) | 赤外線検出器 | |
JP2006047085A (ja) | 赤外線センサ装置およびその製造方法 | |
JPH11326037A (ja) | 赤外線検出器用真空パッケージ及びその製造方法 | |
JP5558189B2 (ja) | 赤外線センサ及びその製造方法 | |
JPS6212454B2 (ja) | ||
JPH11258038A (ja) | 赤外線センサ | |
JP2001174323A (ja) | 赤外線検出装置 | |
JPH09113352A (ja) | マイクロレンズ付赤外線検出素子およびその製造方法 | |
JP2001174324A (ja) | 赤外線検出器および赤外線検出装置 | |
JP2013186038A (ja) | 赤外線検出装置 | |
JP2013108970A (ja) | 赤外線検出装置 | |
JP2000321125A (ja) | 赤外線センサ素子 | |
KR101034647B1 (ko) | 웨이퍼 레벨 패키징을 이용한 ndir 방식의 가스 센서용적외선 감지소자 및 그의 제조방법 | |
JP2012230010A (ja) | 赤外線センサ | |
JPH08261832A (ja) | 赤外線センサ及びその製造方法 | |
JP2000346704A (ja) | ボロメーター型赤外線検出素子 | |
US20240194707A1 (en) | Enhanced area getter architecture for wafer-level vacuum packaged uncooled focal plane array | |
JP2022540409A (ja) | 真空充填式ウェハレベル筐体により熱赤外線センサーアレーを製作する方法 | |
JP2016173250A (ja) | 赤外線センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 200580003856.3 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005719519 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067019767 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2005719519 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067019767 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10590510 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 10590510 Country of ref document: US |