WO2005071511A1 - 過電流検出回路及びそれを備えたレギュレータ - Google Patents
過電流検出回路及びそれを備えたレギュレータ Download PDFInfo
- Publication number
- WO2005071511A1 WO2005071511A1 PCT/JP2005/000605 JP2005000605W WO2005071511A1 WO 2005071511 A1 WO2005071511 A1 WO 2005071511A1 JP 2005000605 W JP2005000605 W JP 2005000605W WO 2005071511 A1 WO2005071511 A1 WO 2005071511A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transistor
- output
- voltage
- terminal
- overcurrent detection
- Prior art date
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
- G05F1/573—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
Definitions
- the present invention detects and protects, for example, when an overcurrent flows through an output transistor as a component that outputs a current to a load in a regulator that converts a power supply voltage into a predetermined DC voltage
- the present invention relates to an overcurrent detection circuit and a regulator provided with the overcurrent detection circuit.
- a switching regulator such as a series regulator, has an output transistor provided between an input power supply voltage and a terminal connected to a load and outputting a predetermined DC voltage, and controls the output transistor. Maintains a predetermined DC voltage. Then, in the event of an abnormality such as when the load is short-circuited, a circuit for detecting and protecting the overcurrent is provided to prevent the output transistor from being destroyed by the overcurrent (for example, Patent Document 1)
- FIG. 4 shows a conventional overcurrent detection circuit and a regulator provided with the same.
- the regulator 101 includes an output transistor 11 which is a P-type MOS transistor, a smoothing circuit 12 for smoothing the output of the output transistor 11, an output terminal OUT for outputting a smoothed predetermined DC voltage, and an output terminal.
- a control circuit 14 that controls the output transistor 11 by feedback-inputting the voltage of OUT, an overcurrent detection circuit 110a that detects and protects an overcurrent of the output transistor 11, and a power are also configured.
- the load 13 is connected to the output terminal OUT.
- the overcurrent detection circuit 110a uses the power supply voltage V
- a monitoring transistor 121 which is a P-type MOS transistor having a gate connected thereto, an output current detection resistor 122 connected to the drain of the monitoring transistor 121 and the other end grounded, a drain of the monitoring transistor 121 and an output current detection
- the gate is connected to the connection point of the resistor 122, the drain is connected to the control circuit 14, and the source is also configured with the overcurrent detection output transistor 123 which is an N-type MOS transistor whose source is grounded.
- the size of the monitoring transistor 121 is set to 1ZN of the output transistor 11.
- the monitor transformer Since the current flowing through the resistor 121 is used only for overcurrent detection, the power loss is not increased, so N is a large natural number so as to reduce the current value.
- the current of IZN flows, and the voltage corresponding to the output current is detected based on the ground potential.
- the overcurrent detection output transistor 123 When the threshold value of the output transistor 123 exceeds the value (Vth), the overcurrent detection output transistor 123 outputs a single level. As a result, the control circuit 14 turns off the output transistor 11 assuming that the output current of the output transistor 11 has exceeded the overcurrent detection level (determining that an overcurrent is flowing).
- the overcurrent detection level can be adjusted by the size of the monitoring transistor 121 and the resistance value of the output current detection resistor 122.
- This regulator 102 has substantially the same configuration as that of the above-described regulator 101 except for the overcurrent detection circuit 110b.
- the overcurrent detection circuit 110b has a monitoring transistor 121 and a An output current detection resistor 122.
- the overcurrent detection circuit 110b includes an overcurrent detection output comparator 125 instead of the overcurrent detection output transistor 123.
- This overcurrent detection output comparator 125 has an inverting input terminal at the connection point of the monitoring transistor 121 and the output current detecting resistor 122, a non-inverting input terminal at the overcurrent detection reference voltage 124, and an output terminal at the control circuit 14. Are connected to each other.
- the overcurrent detection output comparator 125 When the output reference voltage 124 is exceeded, the overcurrent detection output comparator 125 outputs a low level. Accordingly, the control circuit 14 turns off the output transistor 11 assuming that the output current of the output transistor 11 has exceeded the overcurrent detection level.
- the overcurrent detection level can be adjusted by the size of the monitor transistor 121, the resistance value of the output current detection resistor 122, and the value of the overcurrent detection reference voltage 124.
- Patent Document 1 Japanese Patent Application Laid-Open No. H8-331757 Disclosure of the invention
- the overcurrent detection circuits 110a and 110b can detect the overcurrent flowing through the output transistor 11.
- the present inventor has studied higher accuracy of the overcurrent detection level of the overcurrent detection circuit, and has found that in these overcurrent detection circuits 110a and 110b, the voltage generated in the output current detection resistor 122, That is, attention was paid to the fact that the drain voltage of the monitoring transistor 121 is based on the ground potential, and the drain voltage of the output transistor 11 is not based on the ground potential. In other words, this assumes that the drain voltage of the monitor transistor 121 is different from the drain voltage of the output transistor 11, and as a result, the current of the monitor transistor 121 deviates from the value of IZN.
- the inventor of the present application has found that when the temperature fluctuates, the monitoring transistor 121 and the output transistor 11 and the output current detection resistor 122 have different temperature characteristics, which may affect the overcurrent detection level. I paid attention.
- the characteristics of the overcurrent detection output transistor 123 also fluctuate, so that the overcurrent detection level is assumed to further fluctuate.
- the present invention has been made in view of the above-described circumstances, and an object of the present invention is to suppress the fluctuation of the overcurrent detection level when the input power supply voltage or the temperature fluctuates.
- An object of the present invention is to provide an overcurrent detection circuit and a regulator including the same.
- an overcurrent detection circuit is configured such that a power supply voltage is input to an input terminal and a control voltage is input to a control terminal to output an output current.
- An overcurrent detection circuit that detects when an overcurrent flows through an output transistor, the monitor transistor having a control terminal and an output terminal connected to a control terminal and an output terminal of the output transistor, and a power supply voltage, Detection bias voltage controlled at input terminal
- An output current detection transistor whose input is connected to the input terminal of the monitoring transistor, an output terminal is connected to the input terminal of the monitoring transistor, a constant current source for generating a reference current, a power supply voltage is provided to the input terminal, and a detection bias voltage is provided to the control terminal.
- the output voltage is compared by comparing the voltage at the output terminal of the output current detection transistor with the voltage at the output terminal of the reference transistor, which outputs the reference current to the constant current source.
- a comparison circuit that detects when an overcurrent flows through the transistor and outputs an overcurrent detection signal.
- the output transistor, the monitoring transistor, the output current detecting transistor, and the reference transistor are preferably P-type MOS transistors.
- the comparison circuit preferably includes a diode-connected first comparison transistor provided between the constant current source and the reference transistor, and a predetermined multiple of a reference current generated by the constant current source.
- a second constant current source for generating the current of the first current source, and a control terminal connected to the control terminal of the first comparison transistor, interposed between the second constant current source and the output current detection transistor. And a second comparison transistor.
- a regulator is a regulator including the above-described overcurrent detection circuit, wherein an output transistor is provided between a power supply voltage and an output terminal that outputs a predetermined DC voltage, A control circuit is provided to control the output transistor to maintain a predetermined DC voltage by feedback-inputting the voltage of the output terminal and to turn off the output transistor when an overcurrent detection signal of the overcurrent detection circuit is input. Become.
- a series body of a monitoring transistor and an output current detection transistor is provided in parallel with the output transistor, and a power reference transistor is connected in parallel with the output current detection transistor.
- the overcurrent is detected by comparing the output of the output current detection transistor with the output of the reference transistor, so that even if the input power supply voltage or temperature fluctuates, the characteristics of those transistors are relatively high. Since there is no substantial change, the change in the overcurrent detection level can be suppressed.
- the regulator equipped with the same can stabilize the overcurrent detection level, so that the reliability can be improved.
- FIG. 1 is a circuit diagram of an overcurrent detection circuit according to an embodiment of the present invention and a regulator including the same.
- FIG. 2 is an operation waveform diagram of the above.
- FIG. 3 is a circuit diagram of an overcurrent detection circuit according to another embodiment of the present invention and a regulator including the same.
- FIG. 4 is a circuit diagram of an overcurrent detection circuit of the background art and a regulator provided with the same.
- FIG. 5 is a circuit diagram of another overcurrent detection circuit of the background art and a regulator including the same. Explanation of symbols
- FIG. 1 is a circuit diagram of an overcurrent detection circuit according to an embodiment of the present invention and a regulator including the overcurrent detection circuit.
- This regulator 1 is a P-type MOS transistor between the power supply voltage V and the output terminal OUT.
- the output transistor OUT is maintained at a predetermined DC voltage by controlling the output transistor 11 and, when an overcurrent flows through the output transistor 11, the overcurrent detection circuit 1 Oa detects it.
- the output transistor 11 is turned off. More specifically, the regulator 1 inputs the power supply voltage V to the input terminal (source).
- the control voltage is input to the control terminal (gate), and the output current I
- An output transistor 11 that also outputs 0 at the output terminal (drain) force, a smoothing circuit 12 that smoothes the voltage generated at the output terminal of the output transistor 11, and an output terminal OUT that outputs a predetermined DC voltage that has been smoothed.
- the output transistor 11 is controlled from the node in FIG. 1 and the overcurrent detection signal of the overcurrent detection circuit 10a is supplied to the node D input.
- the control circuit 14 sets the control voltage at the node C to the power supply voltage V level so as to turn off the output transistor 11, and when an overcurrent flows through the output transistor 11,
- an overcurrent detection circuit 10a for detecting the overcurrent and outputting the overcurrent detection signal from the node D to the control circuit 14.
- the load 13 is connected to the output terminal OUT.
- the overcurrent detection circuit 10a is a monitoring transistor which is a P-type MOS transistor in which the control terminal (gate) and the output terminal (drain) are connected to the control terminal (gate) and the output terminal (drain) of the output transistor 11, respectively. 21 and the power supply voltage V is applied to the input
- An output current detection transistor 22a which is a P-type MOS transistor, having a control voltage (gate) input to the control terminal (gate) and an output terminal (drain) connected to the input terminal (source) of the monitoring transistor 21; N-type MOS transistor that generates a reference current I (for example, 10 ⁇ )
- the constant current source 24 and the power supply voltage V control the input terminal (source), and the detection bias voltage 28 controls
- the terminal (gate) is input and the output terminal (drain) is also supplied with the reference current I to the constant current source 24.
- the overcurrent detection circuit 10a A series body of the monitoring transistor 21 and the output current detection transistor 22a is provided in parallel with the output transistor 11, and the reference transistor 23 is provided in parallel with the output current detection transistor 22a, and the output of the output current detection transistor 22a is provided.
- the overcurrent is detected by comparing with the output of the reference transistor 23.
- the sizes of the monitoring transistor 21, the output current detecting transistor 22a, and the reference transistor 23 are equal and set to 1ZN (for example, 1Z50000) which is the size of the output transistor 11.
- the overcurrent detection circuit 10a further includes an N-type MOS transistor 26 and a constant current source 27, which determine the current value of the constant current source 24.
- the detection bias voltage 28 commonly input to the control terminals of the output current detection transistor 22a and the reference transistor 23 should be substantially equal to the voltage of the control terminal (gate) of the monitor transistor 21. Is desirable. For example, when the regulator 1 is a switching regulator, it is desirable to set the detection bias voltage 28 to the ground voltage level.
- This operating waveform diagram shows the operating waveforms at nodes A and B (curves A and B), that is, the output current I.
- the current I flowing through the star 21 and the output current detection transistor 22a is approximately I Z2N.
- the voltage required to supply the reference current I to the sense transistor 23 is based on the power supply voltage V.
- the current I Z2N flowing through the transistor 21 and the output current detection transistor 22a is the reference current
- the detection signal at the node D which is the output of the comparison circuit 25a, changes from a high level to a low level (overcurrent detection signal).
- N is set to 50,000
- reference current I is set to 10 A
- the detection signal goes low.
- the control circuit 14 determines that the output current I of the output transistor 11 has exceeded the overcurrent detection level I (determines that overcurrent is flowing), and
- the power transistor 11 is turned off.
- the voltage of each output terminal (drain) of the monitoring transistor 21 and the output current detection transistor 22a in the series body, and the reference transistor 23 is the same as that of the output transistor 11, It is generated based on the power supply voltage V according to the value. Therefore,
- the output transistor 11, the monitoring transistor 21, the output current detecting transistor 22a, and the reference transistor 23 are all P-type MOS transistors and therefore have the same temperature characteristics. Therefore, the characteristics of the monitoring transistor 21, the output current detection transistor 22a, and the reference transistor 23 change in the same manner as the output transistor 11 even if the temperature changes, and the overcurrent detection level I caused by the temperature change. Fluctuation
- This regulator 2 has substantially the same configuration as that of the above-described regulator 1 except for the overcurrent detection circuit 10b. The following is explained.
- the overcurrent detection circuit 10b includes a monitoring transistor 21, an output current detection transistor 22b, a reference transistor 23, and a reference current I
- the size of the monitoring transistor 21 and the reference transistor 23 is set in the same manner as in the overcurrent detection circuit 10a, and the size of the force output current detection transistor 22b is the size of the monitoring transistor 21 and the reference transistor 23. It is set to double.
- the overcurrent detection circuit 10b replaces the comparison circuit 25a with a powerful comparator in the previous embodiment with a comparison circuit 25b having another circuit configuration.
- the comparison circuit 25b is a diode-connected (output terminal (drain) and control terminal (gate) connected) P-type MOS transistor interposed between the constant current source 24 and the reference transistor 23.
- a current that is a predetermined multiple (in this case, 1) of the reference current I generated by the constant current source 24 is generated.
- the second constant current source 33 which is interposed between the second constant current source 33 and the output current detection transistor 22b, has a control terminal (gate) connected to the control terminal (gate) of the first comparison transistor 31.
- a second comparison transistor 32 which is a P-type MOS transistor connected to the second transistor. Accordingly, when the potential of the input terminal (source) of the second comparison transistor 32 falls below the input terminal (source) of the first comparison transistor 31, no current flows through the second comparison transistor 32. (Turn off).
- the overcurrent detection circuit 10b Assuming that the equivalent resistance of the monitoring transistor 21 and the reference transistor 23 is R, the equivalent resistance of the output current detecting transistor 22b is RZ2, and the equivalent resistance of the output transistor 11 is RZN.
- the current flowing through the output current detection transistor 22b branches into a current I flowing through the monitoring transistor 21 and a current I flowing into the second constant current source 33. Therefore, at node B,
- Voltage RI is generated with reference to the power supply voltage V.
- Node B voltage is Node A voltage
- the second comparison transistor 32 is turned off, and the output of the comparison circuit 25b, that is, the detection signal of the node D also changes to a low level (overcurrent detection signal).
- I do Specifically, N is 50,000 and the reference current I 10
- the overcurrent detection circuit 10b detects the overcurrent and outputs an overcurrent detection signal from the node D to the control circuit. Can be output to road 14.
- the comparison circuit 25b of the overcurrent detection circuit 10b uses a comparator like the comparison circuit 25a of the overcurrent detection circuit 10a, the number of elements constituting the circuit can be reduced. Occupied area and power consumption can be reduced.
- the overcurrent detection level I is changed by changing the size of the second constant current source (N-type MOS transistor)
- the voltage at the node B becomes equal to the voltage at the node A. Therefore, if N is 50000, the reference current I
- the overcurrent detection level I is changed.
- overcurrent detection level I is 2.5A.
- the output transistor 11 of the regulator is a P-type MOS transistor
- the monitoring transistor 21, the output current detection transistor 22a (22b), and the reference transistor 23 of the overcurrent detection circuit are all P-type MOS transistors.
- the output transistor 11 can be an N-type MOS transistor, a PNP-type bipolar transistor, or an NPN-type bipolar transistor.
- the monitoring transistor 21 and the output current detecting transistor 22a are used.
- the overcurrent detection circuit may be configured by matching (22b) and the reference transistor 23 to those types.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Emergency Protection Circuit Devices (AREA)
- Control Of Voltage And Current In General (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/597,381 US7573689B2 (en) | 2004-01-22 | 2005-01-19 | Overcurrent detecting circuit and regulator having the same |
EP05703842A EP1708069A4 (en) | 2004-01-22 | 2005-01-19 | CURRENT SURCHARGE DETECTION CIRCUIT AND REGULATOR COMPRISING SUCH A CIRCUIT |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-014988 | 2004-01-22 | ||
JP2004014988A JP3889402B2 (ja) | 2004-01-22 | 2004-01-22 | 過電流検出回路及びそれを備えたレギュレータ |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005071511A1 true WO2005071511A1 (ja) | 2005-08-04 |
Family
ID=34805442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/000605 WO2005071511A1 (ja) | 2004-01-22 | 2005-01-19 | 過電流検出回路及びそれを備えたレギュレータ |
Country Status (7)
Country | Link |
---|---|
US (1) | US7573689B2 (ja) |
EP (1) | EP1708069A4 (ja) |
JP (1) | JP3889402B2 (ja) |
KR (1) | KR20060127070A (ja) |
CN (1) | CN100504709C (ja) |
TW (1) | TW200601658A (ja) |
WO (1) | WO2005071511A1 (ja) |
Families Citing this family (27)
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US7672107B2 (en) * | 2006-10-13 | 2010-03-02 | Advanced Analogic Technologies, Inc. | Current limit control with current limit detector |
US7957116B2 (en) | 2006-10-13 | 2011-06-07 | Advanced Analogic Technologies, Inc. | System and method for detection of multiple current limits |
US7532448B2 (en) * | 2006-10-13 | 2009-05-12 | Advanced Analogic Technologies, Inc. | Current limit detector |
JP4996203B2 (ja) * | 2006-11-07 | 2012-08-08 | ルネサスエレクトロニクス株式会社 | 電源電圧回路 |
CN101247212B (zh) * | 2007-02-14 | 2012-06-20 | 中芯国际集成电路制造(上海)有限公司 | 数据检测电路 |
JP4953246B2 (ja) * | 2007-04-27 | 2012-06-13 | セイコーインスツル株式会社 | ボルテージレギュレータ |
CN101188413B (zh) * | 2007-11-30 | 2010-05-26 | 艾默生网络能源有限公司 | 一种变频器模拟输入检测电路 |
JP5310023B2 (ja) * | 2009-01-23 | 2013-10-09 | ミツミ電機株式会社 | レギュレータ用半導体集積回路 |
US8325453B2 (en) * | 2009-05-28 | 2012-12-04 | Qualcomm, Incorporated | Short-circuit protection for switched output stages |
JP5285644B2 (ja) * | 2010-03-26 | 2013-09-11 | 旭化成エレクトロニクス株式会社 | 過電流保護回路、スイッチングレギュレータ、スイッチングアンプ |
JP5537272B2 (ja) * | 2010-06-07 | 2014-07-02 | ローム株式会社 | 負荷駆動回路装置及びこれを用いた電気機器 |
TWI448870B (zh) * | 2010-08-25 | 2014-08-11 | Hon Hai Prec Ind Co Ltd | 穩壓電路結構 |
US8816722B2 (en) * | 2010-09-13 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Current detection circuit |
CN102594109A (zh) * | 2011-01-05 | 2012-07-18 | 上海华虹集成电路有限责任公司 | 限流比较电路 |
US8890579B2 (en) * | 2012-07-20 | 2014-11-18 | Texas Instruments Incorporated | Circuit for current sensing in high-voltage transistor |
US10041982B2 (en) * | 2012-08-15 | 2018-08-07 | Texas Instruments Incorporated | Switch mode power converter current sensing apparatus and method |
JP6205142B2 (ja) * | 2013-03-08 | 2017-09-27 | エスアイアイ・セミコンダクタ株式会社 | 定電圧回路 |
JP6302639B2 (ja) * | 2013-10-08 | 2018-03-28 | ローム株式会社 | 電流監視回路 |
JP6354720B2 (ja) | 2015-09-25 | 2018-07-11 | 株式会社デンソー | 保護回路付きのレギュレータ回路 |
US11239837B2 (en) * | 2017-12-15 | 2022-02-01 | Rohm Co., Ltd. | Switch device |
JP7149104B2 (ja) | 2018-05-28 | 2022-10-06 | ローム株式会社 | 半導体集積回路、オーディオ出力装置、電子機器 |
TWI715096B (zh) | 2018-07-02 | 2021-01-01 | 極創電子股份有限公司 | 過電流保護裝置及方法 |
CN110401168B (zh) * | 2019-08-22 | 2022-02-11 | 广东美的制冷设备有限公司 | 抗干扰电路及空调器 |
KR20210051388A (ko) * | 2019-10-30 | 2021-05-10 | 삼성전자주식회사 | 전자 장치에서의 보호 회로 및 이를 위한 방법 |
US11539393B2 (en) * | 2020-08-07 | 2022-12-27 | Apple Inc. | Radio-frequency front end modules with leakage management engines |
CN113884208B (zh) * | 2021-09-09 | 2023-10-10 | 芯原微电子(成都)有限公司 | 一种高精度过温检测电路 |
CN116609643B (zh) * | 2023-07-21 | 2023-09-19 | 江苏兴宙微电子有限公司 | 信号检测电路和集成电路 |
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2004
- 2004-01-22 JP JP2004014988A patent/JP3889402B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-19 KR KR1020067014794A patent/KR20060127070A/ko not_active Application Discontinuation
- 2005-01-19 EP EP05703842A patent/EP1708069A4/en not_active Ceased
- 2005-01-19 CN CNB2005800029850A patent/CN100504709C/zh not_active Expired - Fee Related
- 2005-01-19 US US10/597,381 patent/US7573689B2/en not_active Expired - Fee Related
- 2005-01-19 WO PCT/JP2005/000605 patent/WO2005071511A1/ja active Application Filing
- 2005-01-21 TW TW094101860A patent/TW200601658A/zh not_active IP Right Cessation
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JPH0576133A (ja) * | 1991-05-02 | 1993-03-26 | New Japan Radio Co Ltd | 電源用icの短絡保護回路 |
JPH08331757A (ja) * | 1995-06-01 | 1996-12-13 | Toshiba Corp | 過電流制限回路 |
JPH10322185A (ja) * | 1997-05-16 | 1998-12-04 | Nec Corp | 半導体集積回路装置 |
EP0881769A2 (en) * | 1997-05-30 | 1998-12-02 | Nec Corporation | Abnormal current detection circuit and load drive circuit including the same |
US20030122530A1 (en) * | 2001-12-05 | 2003-07-03 | Takahiro Hikita | Voltage regulator |
Non-Patent Citations (1)
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Also Published As
Publication number | Publication date |
---|---|
TWI345863B (ja) | 2011-07-21 |
EP1708069A1 (en) | 2006-10-04 |
CN100504709C (zh) | 2009-06-24 |
JP3889402B2 (ja) | 2007-03-07 |
US7573689B2 (en) | 2009-08-11 |
CN1910529A (zh) | 2007-02-07 |
TW200601658A (en) | 2006-01-01 |
US20080247099A1 (en) | 2008-10-09 |
EP1708069A4 (en) | 2008-01-16 |
JP2005208949A (ja) | 2005-08-04 |
KR20060127070A (ko) | 2006-12-11 |
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