WO2005069075A1 - 感光性重合体組成物、パターンの製造法及び電子部品 - Google Patents
感光性重合体組成物、パターンの製造法及び電子部品 Download PDFInfo
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- WO2005069075A1 WO2005069075A1 PCT/JP2004/018832 JP2004018832W WO2005069075A1 WO 2005069075 A1 WO2005069075 A1 WO 2005069075A1 JP 2004018832 W JP2004018832 W JP 2004018832W WO 2005069075 A1 WO2005069075 A1 WO 2005069075A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/13—Phenols; Phenolates
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/13—Phenols; Phenolates
- C08K5/138—Phenolates
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
- C08L77/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino-carboxylic acids or of polyamines and polycarboxylic acids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/02—Halogenated hydrocarbons
- C08K5/03—Halogenated hydrocarbons aromatic, e.g. C6H5-CH2-Cl
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
- C08L77/06—Polyamides derived from polyamines and polycarboxylic acids
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Definitions
- Photosensitive polymer composition composition, method for producing pattern, and electronic component
- the present invention relates to a photosensitive polymer composition, a method for producing a pattern using the composition, and an electronic component. More specifically, a positive-type, heat-resistant photosensitive polymer composition which becomes a polybenzoxazole-based heat-resistant polymer by heat treatment and can be used as a surface protective film, an interlayer insulating film, etc. of electronic components such as semiconductor devices.
- the present invention relates to a method for producing a pattern using a composition, and an electronic component.
- polyimide As a surface protective film or an interlayer insulating film of a semiconductor element, polyimide has been used because of its advantages such as excellent heat resistance, mechanical properties and electrical properties, easy film formation and flattening of the film surface. Is widely used.
- composition (1) for example, see Patent Document 1
- composition (2) a polyamic acid and actinic radiation
- composition (2) a compound containing a carbon-carbon double bond, an amino group, and an aromatic bisazide which can be dimerized or polymerized by irradiation of a compound is added
- a photosensitive polyimide composition When a photosensitive polyimide composition is used, it is usually applied on a substrate in a solution state, dried, irradiated with an actinic ray through a mask, and the exposed portion is removed with a developer to form a pattern. .
- the above compositions (1) and (2) are negative-tone compositions using an organic solvent for a developer. Developers of organic solvents have recently become wasteful due to environmental considerations when treating wastewater. There is a need for a photosensitive heat-resistant material that can be developed with an aqueous developer that can be easily processed with a developer. Further, in order to switch from an etching process using a positive photoresist to a negative photosensitive polyimide, it is necessary to change the mask and developing equipment of the exposure apparatus.
- the above compositions (1) and (2) have the problems as described above.
- composition (3) a polyimide precursor having an o_nitrobenzyl group introduced through an ester bond
- precursor composition (3) a polyimide precursor having an o_nitrobenzyl group introduced through an ester bond
- composition (4) a composition containing a polyamic acid ester containing a phenolic hydroxyl group and an o-diazoquinone compound (hereinafter, referred to as composition (4) (for example, see Patent Document 4)) is known.
- composition (5) a photosensitive agent material using polybenzoxazole, which has the same heat resistance, mechanical properties, and electrical properties as polyimide
- composition (5) a composition containing a polybenzoxazole precursor and 0_diazoquinone compound
- the precursor composition (3) has a wavelength of 300 nm or less, which is sensitive to light
- the precursor composition (3) has low sensitivity and is used particularly in an i-line stepper (365 nm single-wavelength light) which is recently used. Is difficult.
- the compositions (4) and (5) have higher sensitivity than the precursor composition (3), but have a problem that they are not practically sufficient.
- a composition to which a phenol binuclear substance or the like is added in order to improve sensitivity hereinafter, referred to as composition (6); see, for example, Patent Document 6) is also known.
- Patent Document 1 Japanese Patent Publication No. 52-30207
- Patent Document 2 Japanese Patent Publication No. 3-36861
- Patent Document 3 JP-A-60-37550
- Patent Document 4 JP-A-4-1204945
- Patent Document 5 JP-A-64-6947
- Patent Document 6 JP-A-9-302221 Disclosure of the invention
- An object of the present invention is to solve at least the above-mentioned problems.
- An object of the present invention is to provide a favorable positive-type photosensitive polymer composition which has high sensitivity, is excellent in the shape of a pattern, and is free from pattern deformation in a curing step.
- the present invention also provides a method for producing a pattern in which a good-shaped pattern with high resolution is obtained by using the photosensitive polymer composition.
- the present invention provides a highly reliable electronic component having a precise pattern having a good shape.
- the present invention is as follows.
- a photosensitive polymer composition comprising a compound represented by the formula:
- the compound represented by the above general formula (II) has 2,2-bis [3,5 bis (hydroxymethyl) 4 -hydroxyphenyl 1,1,3,3,3_hexafluoropropane.
- the compound represented by the general formula (II) is 2,2-bis [3,5_bis (methoxymethyl) -4-hydroxyphenyl] -1,1,1,3,3,3
- the photosensitive polymer composition according to the above [1] which is 3-hexafluoropropane.
- the component (a), the component (b), and the component (c) are mixed in an amount of 5 to 100 parts by weight of the component (b) and 100 parts by weight of the component (a).
- the photosensitive polymer composition according to any one of [1] to [3], wherein the amount is 1 to 30 parts by weight.
- X— represents a counter anion
- IT and R 4 each independently represent an alkyl group or an alkenyl group
- a and b each independently represent an integer of 0-5.
- the compounding ratio among the components (a), (b), (c) and (d) is such that 5-100 parts by weight of the component (b) is added to 100 parts by weight of the component (a).
- [8] a step of applying the photosensitive polymer composition according to any one of the above [1] to [3] on a supporting substrate and drying, and coating the photosensitive resin layer obtained by the drying with a predetermined amount; A step of exposing the photosensitive resin layer after the exposure, a step of developing the photosensitive resin layer after the exposure, and a step of heat-treating the photosensitive resin layer after the development.
- the photosensitive polymer composition of the present invention has a high sensitivity and a high resolution and a good pattern shape and a good residual film ratio in an unexposed portion. Further, the pattern formed in the present invention does not undergo deformation of the pattern shape due to the thermosetting process after development, and has excellent heat resistance.
- a pattern having a high resolution and a good shape can be obtained by using the composition having high sensitivity.
- the electronic component of the present invention has high reliability by having a polybenzoxazole pattern having a good shape as a surface protective film and / or an interlayer insulating film.
- FIG. 1 is a diagram showing a manufacturing process of a semiconductor device having a multilayer wiring structure.
- the component (a) having a repeating unit represented by the general formula (I) in the present invention is generally a phenolic hydroxyl group-containing polyamide that is soluble in an aqueous alkali solution.
- the alkali aqueous solution is an alkaline solution such as an aqueous solution of tetramethylammonium hydroxide, an aqueous solution of a metal hydroxide, or an aqueous solution of an organic amine.
- the amide unit containing a hydroxy group represented by the general formula (I) can be finally converted into an oxazole compound having excellent heat resistance, mechanical properties, and electrical properties by dehydration and ring closure during curing.
- the polyamide having a repeating unit represented by the general formula (I) used in the present invention may have the repeating unit, but the solubility of the polyamide in an aqueous alkaline solution is derived from the phenolic hydroxyl group. Therefore, it is preferable that the amide unit containing a hydroxy group is contained in a predetermined ratio or more.
- U represents a tetravalent organic group
- V and W represent a divalent organic group
- W is a divalent organic group different from _U ( ⁇ H) —.
- k indicates the mole fraction, and the sum of j and k is 100 moles
- the molecular weight of the component (a) is preferably from 3,000 to 200,000 by weight average molecular weight, from 5,000 to 100,000 force S, more preferably S.
- the molecular weight is a value measured by a gel permeation chromatography method and converted by a standard polystyrene calibration curve.
- the polyamide having a repeating unit represented by the general formula (I) is a general polyamide Can be synthesized from a dicarboxylic acid derivative and a hydroxy group-containing diamine. Specifically, the compound can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting the dicarboxylic acid derivative with the hydroxy group-containing diamine. As the dihalide derivative, a dichloride derivative is preferable.
- the dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent.
- thionyl chloride which is used in an ordinary acid croking reaction of a carboxylic acid, is used.
- Phosphoryl chloride phosphorus oxychloride, phosphorus pentachloride and the like can be used.
- a method for synthesizing the dichloride derivative for example, a method in which a dicarboxylic acid derivative is reacted with the halogenating agent in a solvent, or a method in which the reaction is performed in an excess of a halogenating agent, and then the excess is distilled off There is a method of leaving.
- the reaction solvent N-methyl-2-pyrrolidone, N_methyl_2_pyridone, N, N-dimethylacetamide, N, N-dimethylformamide, toluene, benzene, and the like can be used.
- the amount of the halogenating agent used is preferably 1.5-3.0 monoreca S, more preferably 2.0- 2.5 More preferred than Monoreca S.
- 4.0 to 50 mol is preferable, and 5.0 to 20 monoreca S is more preferable.
- the reaction temperature is preferably -10 to 70 ° C, and more preferably 0 to 20 ° C.
- the reaction of the dichloride derivative with the diamines is preferably carried out in an organic solvent in the presence or absence of a dehydrohalogenating agent.
- a dehydrohalogenating agent an organic base such as pyridine or triethylamine is usually used.
- the organic solvent for example, N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide and the like can be used.
- the reaction temperature is preferably from -10 to 30 ° C, more preferably from 0 to 20 ° C.
- a tetravalent organic group represented by U generally means a polyamide structure formed by reacting with a dicarboxylic acid. It is a residue of diamine having a structure located at the position. Among such diamine residues, a tetravalent aromatic group is preferred. As the number of carbon atoms, a tetravalent aromatic group having 640 carbon atoms is more preferable, which is preferably a residue of 640 diamine. Furthermore, a tetravalent aromatic group Preferably, all four binding sites are present on an aromatic ring.
- diamines examples include 3,3, -diamino-4,4, dihydroxybiphenyl, 4,4 diamino-1,3'-dihydroxybiphenyl, bis (3-amino) I-4-hydroxyphenyl) propane, bis (4-amino-13-hydroxyphenyl) propane, bis (3-amino-14-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4-amino-3- Hydroxyphenyl) -1,1,1,1,3,3,3-hexafluoropropane. These compounds can be used alone or in combination of two or more.
- the divalent organic group represented by W is generally a diamine residue that reacts with a dicarboxylic acid to form a polyamide structure.
- the diamine residue is a residue having a structure different from that of the diamine that forms the 1 U ( ⁇ H) —, and is preferably a divalent aromatic group or an aliphatic group.
- a divalent aromatic group having 414 carbon atoms is more preferable, which is preferably a residue of 440 diamine.
- diamines examples include 4,4, diaminodiphenyl ether, 4,4, _diaminodiphenylmethane, 4,4'diaminodiphenylsulfone, 4,4'diaminodiphenylsulfide, and benzine.
- Aromatic diamine compounds such as enoxypheninole) sulfone, bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl] ether, 1,4-bis (4-aminophenoxy) benzene, etc.
- X-7-22, 161AS, X-22-161A, X-22-161B, X-22-161C and X-22-161E Re also manufactured by Shin-Etsu Chemical Co., Ltd., and trade name), and the like. These conjugates can be used alone or in combination of two or more.
- the divalent organic group represented by V is a residue of a dicarboxylic acid that forms a polyamide structure by reacting with diamine.
- divalent aromatic groups are preferred.
- a divalent aromatic group having 6 to 40 carbon atoms which is preferably a residue of a dicarboxylic acid having 6 to 40 carbon atoms, is more preferable.
- Divalent aromatic group It is preferable that both of the two binding sites be present on the aromatic ring.
- Examples of such a dicarboxylic acid include isophthalic acid, terephthalic acid, 2,2_bis (4_carboxyphenyl) -1,1,1,1,3,3,3_hexafluoro. Propane, 4,4'-dicarboxybiphenyl, 4,4'_dicanolepoxydiphenylenolate, 4,4'_dicanolepoxytetrafenylsilane, bis (4-carboxyphenyl) sulfone, 2,2- Aromatic dicarboxylic acids such as bis (p-carboxyphenylinole) propane, 5_tert-butylisophthalic acid, 5-bromoisophthalic acid, 5_fluoroisophthalic acid, 5_chloroisophthalic acid, and 2,6_naphthalenedicarboxylic acid; Examples include 1,2-cyclobutanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, 1,3-cyclopen
- the compound that generates an acid by light which is the component (b) used in the present invention, is a photosensitizer and has a function of generating an acid by irradiation with light and increasing the solubility of the irradiated portion in an aqueous alkaline solution. It has.
- Examples of the type include o quinonediazide compounds, aryldiazonium salts, diarylodonium salts, and triarylsulfonium salts, and are not particularly limited, but in terms of 0-quinonediazide compound power sensitivity. It is preferred.
- This o_quinonediazide compound can be obtained, for example, by subjecting o_quinonediazidosulfonyl chlorides to a condensation reaction with a hydroxy compound, an amino compound and the like in the presence of a dehydrochlorinating agent.
- Examples of the o-quinonediazidosulfoyl chlorides include 1,2-benzoquinone 2-diazido-4-sulfonyl chloride, 1,2-naphthoquinone-2-diazide-5-sulfonyl chloride, and 1,2_naphthoquinone — 2-diazide _4_sulfoyl chloride and the like.
- hydroxy compound examples include hydroquinone, resorcinol, pyrogallonole, bisphenol A, bis (4-hydroxyphenyl) methane, 2,2-bis (4-hydroxyphenyl) hexafluoropropane, 2,3,4_trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2 ', 4,4'-tetrahydroxybenzophenone, 2,3,4,2 ,, 3'-pentahydroxybenzophenone, 2,3,4,3,4 ', 5'-hexahydroxybenzophenone, bis (2,3,4-trihydroxyphenyl) methane, bis (2 , 3, 4-trihydroxy (Feninole) pro / ⁇ °, 4b, 5, 9b, 10-tetrahydro-1,3,6,8-tetrahydroxy-1,5,10-dimethylindeno [2,1-a] indene, tris (4 -Hydroxyphenyl) methane, tris (4 -Hyd
- amino compound examples include p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, and 4,4'-diamine.
- the equivalent ratio of o-quinonediazidosulfonyl chloride to the hydroxy compound and the amino compound is preferably 0.5-1.
- the preferred ratio between the dehydrochlorinating agent and 0-quinonediazidosulfonyl chloride is in the range 0.95 / 1-1 / 0.95.
- the preferred reaction temperature is 0-40 ° C, and the preferred reaction time is 110 hours.
- reaction solvent a solvent such as dioxane, acetone, methyl ethyl ketone, tetrahydrofuran, dimethyl ether, N_methylpyrrolidone, or the like is used.
- Examples of the dehydrochlorinating agent include sodium carbonate, sodium hydroxide, sodium hydrogencarbonate, potassium carbonate, potassium hydroxide, trimethylamine, triethylamine, pyridine and the like.
- the amount of the component (b) is 100 parts by weight of the component (a) in view of the difference in dissolution rate between the exposed and unexposed portions and the allowable range of sensitivity. 5 to 100 parts by weight is preferred, and 8 to 40 parts by weight is more preferred.
- the component (c) used in the present invention has two or more phenolic hydroxyl groups, two or more hydroxymethyl groups, alkoxymethyl groups, acyloxymethyl groups, and a fluoroalkyl group in the molecule. Is a specific compound having The use of the component (c) increases the dissolution rate of the exposed part and increases the sensitivity when developing with an aqueous alkali solution. Further, when the film is cured after the pattern is formed, the pattern can be prevented from being deformed. Hydroxymethinole group, al Among the oxymethyl group or the acyloxymethyl group, a hydroxymethyl group, a methoxymethyl group and an ethoxymethyl group are particularly preferred.
- the component (c) represented by the general formula (II) includes 2,2 bis [3,5bis (hydroxymethylenol) -4-hydroxyphenyl] -1,1,1,3,3 3,3-hexafluoropropane, 2,2-bis
- the amount of the component (c) is determined based on the development time and the allowable width of the unexposed portion remaining film ratio, based on 100 parts by weight of the component (a). 1 to 30 parts by weight is preferred, and 5 to 20 parts by weight is more preferred.
- the component (d) optionally used is the component described above with respect to an aqueous alkali solution.
- R 3 and R 4 each independently represent an alkyl group or an alkenyl group, and a and b each independently represent an integer of 0-5.
- anion represented by X— examples include nitrate ion, boron tetrafluoride ion, perchlorate ion, trifluoromethanesulfonic acid ion, p-toluenesulfonic acid ion, thiocyanate ion, Chloride ion, bromine ion, iodine ion and the like can be mentioned.
- diarydominium salt represented by the general formula (III) examples include diphenyldonium nitrate, bis (p_tert-butylphenylenole) odenium nitrate, diphenyl nitrite and the like. Don't trifluoromethanesulfonate, bis (p_tert_butylphenol) nordone -Dite and the like.
- diphenodornodnimunitrate diphenododonium trifluorosulfonate methanesulfonate
- diphenodorenodonium_8-anilinonaphthalene-1-sulfonate are highly effective. Preferred are mentioned.
- the amount of the component (d) is preferably 0.01 to 15 parts by weight with respect to 100 parts by weight of the component (a) from the viewpoint of sensitivity and the allowable range of the development time. Parts are more preferred 0.05-5 parts by weight are even more preferred 0.1-5 parts by weight are particularly preferred.
- the photosensitive polymer composition of the present invention can be obtained by dissolving the components (a), (b), (c) and, if necessary, component (d) in a solvent. .
- solvent examples include N-methyl-2-pyrrolidone, N, N-dimethylformamide, N,
- Aprotic polar solvents such as N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphorylamide, tetramethylene sulfone, and ⁇ -butyrolataton are preferred. These are used alone or in combination of two or more.
- a jetinole ketone, a diisobutinoleketone, a methinoleaminoleketone in order to improve the coating property, a jetinole ketone, a diisobutinoleketone, a methinoleaminoleketone, The ability to use solvents such as ethyl lactate and propylene glycol monomethyl ether acetate together.
- the amount of the solvent is not particularly limited, but is generally adjusted so that the amount of the solvent in the composition is 20 to 90% by weight.
- the photosensitive polymer composition of the present invention may further contain, as necessary, as an adhesion assistant, for example, an organic silane compound, an aluminum chelate compound, or the like.
- an adhesion assistant for example, an organic silane compound, an aluminum chelate compound, or the like.
- organosilane conjugate examples include ⁇ -aminopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, burtriethoxysilane, ⁇ -glycidoxypropyltriethoxysilane, and ureapropyltriethoxysilane. Is mentioned.
- aluminum chelate conjugate examples include aluminum tris (acetyl acetate), acetyl acetate aluminum diisopropylate and the like.
- the photosensitive polymer composition of the present invention can be formed into a polyoxazole pattern through a pattern production method described below.
- the pattern production method of the present invention comprises the steps of: applying a photosensitive polymer composition on a support substrate and drying; and exposing the photosensitive resin layer obtained by the drying to a predetermined pattern.
- the method includes a step of developing the photosensitive resin layer after the exposure, and a step of heat-treating the developed photosensitive resin film.
- the photosensitive polymer composition is spin-coated using a spinner or the like on a supporting substrate made of, for example, TiO or SiO or silicon nitride, and then dried using a hot plate or an oven.
- the photosensitive polymer composition which has become a coating layer on the supporting substrate, is irradiated with actinic light such as ultraviolet light, visible light, or radiation through a mask.
- a relief pattern is obtained by removing the exposed portion with a developing solution.
- a developing solution for example, an alkali aqueous solution such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, getylamine, triethynoleamine, triethanolanolamine, or tetramethylammonium hydroxide is preferable. No. these The aqueous solution preferably has a base concentration of 0.1 to 10% by weight. Further, an alcohol or a surfactant may be added to the above-mentioned developer for use. These can be used in an amount of preferably 0.01 to 10 parts by weight, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the developer.
- the obtained pattern is preferably subjected to a heat treatment at 150 to 450 ° C. to form a pattern of a heat-resistant polybenzoxazole having an oxazole ring and other functional groups. obtain.
- the photosensitive polymer composition of the present invention can be used for electronic components such as semiconductor devices and multilayer wiring boards.
- the surface protective film, interlayer insulating film, and multilayer wiring of semiconductor devices can be used. It can be used for forming an interlayer insulating film or the like of a plate.
- the semiconductor device of the present invention is not particularly limited except that it has a surface protective film and an interlayer insulating film formed using the composition, and can have various structures.
- the electronic component of the present invention is an electronic component having an electronic device having a pattern layer obtained by the manufacturing method, wherein the pattern layer is an interlayer insulating film layer and And / or is provided as a surface protective film layer.
- FIG. 1 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure. From top to bottom, a series of steps from the first step to the fifth step is shown.
- a semiconductor substrate 1 such as a Si substrate having circuit elements is covered with a protective film 2 such as a silicon oxide film except for a predetermined portion of the circuit elements, and a first conductor layer 3 is formed on the exposed circuit elements. Is formed.
- a film layer of a polyimide resin or the like is formed as an interlayer insulating film layer 4 on the semiconductor substrate by spin coating or the like (first step).
- a photosensitive resin layer 5 of a Shiridani rubber type or a phenol novolak type is formed on the interlayer insulating film layer 4 by spin coating, and a predetermined portion of the interlayer insulating film layer is formed by a known photolithography technique.
- a window 6A is provided so that 4 is exposed (second step).
- the interlayer insulating film layer 4 of the window 6A is selectively etched by dry etching using a gas such as oxygen or carbon tetrafluoride to provide a window 6B.
- a gas such as oxygen or carbon tetrafluoride
- an etching method that does not corrode the first conductive layer 3 exposed from the window 6B but corrodes only the photosensitive resin layer 5 is used.
- the photosensitive resin layer 5 is completely removed by using the etching solution (third step).
- the second conductor layer 7 is formed by using a known photolithography technique, and the electrical connection with the first conductor layer 3 is completely performed (fourth step).
- the surface protective film layer 8 is formed.
- the photosensitive polymer composition is applied by a spin coating method, dried, irradiated with light from a mask on which a pattern for forming a window 6C is drawn on a predetermined portion, and then developed with an alkaline aqueous solution. Then, a relief pattern is formed and heated to form a surface protective film layer 8 (polybenzoxazole film) (fifth step).
- the surface protection film layer 8 (polybenzoxazole film) protects the conductor layer from external stress, wire, and the like, and the resulting semiconductor device has excellent reliability.
- the interlayer insulating film layer 4 can be formed using the photosensitive polymer composition of the present invention.
- the reaction solution thus obtained is poured into 4 liters of water, and the precipitate is collected, washed, and dried under reduced pressure at 50 ° C for 24 hours to obtain 55 g of polyhydroxyamide (P-1). Obtained.
- the weight average molecular weight of the obtained polymer was 25,200, and the ratio of the cyclopropylcarbonyl group at the terminal of the polymer calculated from the ⁇ -NMR spectrum was 86%.
- the reaction solution thus obtained is poured into 4 liters of water, and the precipitate is collected, washed, and dried under reduced pressure at 50 ° C for 24 hours to obtain 55 g of polyhydroxyamide (P-2). Obtained.
- the weight average molecular weight of the obtained polymer was 17,300, and the ratio between the cyclopropylcarbonyl group and the amino group at the polymer end calculated from the NMR spectrum was 91%.
- the reaction solution was poured into 1 liter of a 0.1% aqueous hydrochloric acid solution, and the precipitate was collected, washed, and dried under reduced pressure at 40 ° C. for 24 hours to obtain 30 g of naphthoquinonediazidosulfonyl ester (A).
- the obtained naphthoquinonediazidosulfonyl ester (A) was analyzed by HPLC, the content of the triester was 91.8%.
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate, and dried by heating at 120 ° C for 3 minutes. Obtained .
- This coating using an i-line Sutetsupa (Canon Inc.) as an exposure apparatus, through the reticle, in steps of exposure of 10 mjZcm 2, was subjected to exposure processing by changing the exposure amount in the range of 100 810mjZcm 2 .
- a 2.38% by weight aqueous solution of tetramethylammonium hydroxide was used as a developing solution, and paddle development was performed for 90 seconds, followed by washing with pure water to obtain a pattern.
- the proper exposure was determined to be 280 mjZcm 2, and it was confirmed that a pattern having a good shape was formed up to a size of 3 ⁇ m with this exposure.
- the residual film ratio in the unexposed area was 81%.
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate and dried by heating at 120 ° C. for 3 minutes to form a 11.7 / im coating film. Obtained .
- This coating i line Sutetsupa the (Canon Inc.) as an exposure apparatus, through the reticle, in steps of an exposure amount of 10 mj / cm 2, in the range of 100- 810mj / cm 2 by changing the exposure amount exposed Processing was performed. Then, to obtain a tetramethylammonium Niu beam hydroxide 2. 38 wt 0/0 aqueous developing solution and to wash the 110 seconds and puddle developed with row-,, pure water pattern.
- the appropriate exposure was determined to be 280 mjZcm 2, and it was confirmed that a pattern having a good shape up to the size of 3 ⁇ m was formed at this exposure.
- the residual film ratio in the unexposed area was 80%.
- Example 3 20.0 g of the polyhydroxyamide (P-2) obtained in Synthesis Example 2, 2.0 g of the naphthoquinonediazidosulfonyl ester (A) obtained in Synthesis Example 4, 2,2_bis [3,5_bis ( Hydroxymethyl) —4-Hydroxyphenyl] — 1,1,1,3,3,3-hexafluoropropane 2.0 g, diphenolenordonidimnitrate 0.36 g, ⁇ -mercapto 0.6 g of propyltrimethoxysilane was dissolved by stirring in 30 g of ⁇ -petit ratatone. This solution was filtered under pressure using a Teflon (registered trademark) filter having a pore size of 3 ⁇ m to obtain a photosensitive polymer composition.
- Teflon registered trademark
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate, and dried by heating at 120 ° C for 3 minutes. I got This coating, i line Sutetsupa the (Canon Inc.) through a Yore ,, reticle as exposure machine, in increments of 10 mjZcm 2 exposure, the exposure processing by changing the exposure amount in the range of 100 810mjZcm 2 Done. Next, a 2.38% by weight aqueous solution of tetramethylammonium hydroxide was used as a developing solution, and paddle development was performed for 90 seconds, followed by washing with pure water to obtain a pattern.
- the appropriate exposure amount was determined to be 260 mj / cm 2, and it was confirmed that a pattern having a good shape up to the size of 3 ⁇ m was formed at this exposure amount.
- the residual film ratio in the unexposed area was 80%.
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate, and dried by heating at 120 ° C for 3 minutes. Obtained .
- the coating film i-ray Sutetsupa the (Canon Inc.) through a Yore ,, reticle as exposure machine, in steps of exposure of 10 mjZcm 2, the exposure processing by changing the exposure amount in the range of 100 810mjZcm 2 was performed. Then, to obtain a tetramethylammonium Niu beam hydroxide 2. 38 wt 0/0 aqueous developing solution and was washed for 100 seconds and puddle developed with row-,, pure water pattern.
- the appropriate exposure was determined to be 230 mj / cm 2, and it was confirmed that a pattern having a good shape up to a size of 3 ⁇ m was formed at this exposure.
- the residual film ratio in the unexposed area was 79%.
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate, and dried by heating at 120 ° C for 3 minutes. Obtained .
- This coating i line Sutetsupa the (Canon Inc.) as an exposure apparatus, through the reticle, in steps of an exposure amount of 10 mj / cm 2, in the range of 100- 810mj / cm 2 by changing the exposure amount exposed Processing was performed. Then, to obtain a tetramethylammonium Niu beam hydroxide 2. 38 wt 0/0 aqueous developing solution and to wash the 130 seconds and puddle developed with row-,, pure water pattern.
- the appropriate exposure was determined to be 350 mj / cm 2, and it was confirmed that a pattern having a good shape up to a size of 3 ⁇ m was formed at this exposure.
- the residual film ratio in the unexposed area was 79%.
- a photosensitive polymer composition was obtained by the same composition, blending amount and procedure as in Example 3, except that the dimnitrate was changed to 0.1 lg.
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate, and dried by heating at 120 ° C for 3 minutes. Got .
- This coating i line Sutetsupa the (Canon Inc.) as an exposure apparatus, through the reticle, in steps of an exposure amount of 10 mj / cm 2, in the range of 100- 810mj / cm 2 by changing the exposure amount exposed Processing was performed. Then, to obtain a tetramethylammonium Niu beam hydroxide 2. 38 wt 0/0 aqueous developing solution and was washed for 90 seconds and puddle developed with row-,, pure water pattern.
- the appropriate exposure was determined to be 330 mjZcm 2, and it was confirmed that a pattern having a good shape up to a size of 3 ⁇ m was formed at this exposure.
- the residual film ratio in the unexposed area was 80%.
- a photosensitive polymer composition was obtained by the same composition, amount and procedure as in Example 4, except that the amount of munitrate was changed to 0.16 g.
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate, and dried by heating at 120 ° C for 3 minutes. Obtained .
- This coating i line Sutetsupa the (Canon Inc.) as an exposure apparatus, through the reticle, in steps of an exposure amount of 10 mj / cm 2, in the range of 100- 810mj / cm 2 by changing the exposure amount exposed Processing was performed. Then, to obtain a tetramethylammonium Niu beam hydroxide 2. 38 wt 0/0 aqueous developing solution and was washed for 100 seconds and puddle developed with row-,, pure water pattern.
- the appropriate exposure was determined to be 320 mj / cm 2, and it was confirmed that a pattern having a good shape up to the size of 3 ⁇ m was formed at this exposure.
- the residual film ratio in the unexposed area was 78%.
- the obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, placed on a hot plate, and dried by heating at 120 ° C for 3 minutes. I got This coating, i line Sutetsupa the (Canon Inc.) through a Yore ,, reticle as exposure machine, in increments of 10 mjZcm 2 exposure, the exposure processing by changing the exposure amount in the range of 100 810mjZcm 2 Done. Next, a 2.38% by weight aqueous solution of tetramethylammonium hydroxide was used as a developing solution, and paddle development was performed for 80 seconds, followed by washing with pure water to obtain a pattern.
- the appropriate exposure was determined to be 320 mjZcm 2, and the sensitivity was not so high. It was confirmed that a pattern having a good shape was formed up to the size of 3 ⁇ m at this exposure dose.
- the residual film ratio of the unexposed portion was 80%.
- the method for producing a photosensitive polymer composition and a pattern according to the present invention is suitable for forming a surface protective film and an interlayer insulating film of an electronic component such as a semiconductor device. Further, since the electronic component of the present invention has a pattern having a good shape, it is possible to provide a highly reliable electronic device.
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Abstract
Description
Claims
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EP04807191A EP1708026B1 (en) | 2004-01-14 | 2004-12-16 | Photosensitive polymer composition, process for producing pattern, and electronic part |
KR1020067015312A KR101122446B1 (ko) | 2004-01-14 | 2004-12-16 | 감광성 중합체 조성물, 패턴의 제조법 및 전자부품 |
AT04807191T ATE527577T1 (de) | 2004-01-14 | 2004-12-16 | Lichtempfindliche polymerzusammensetzung, prozess zur erzeugung einer struktur und elektronisches teil |
US10/585,738 US8231959B2 (en) | 2004-01-14 | 2004-12-16 | Photosensitive polymer composition, method of producing pattern and electronic parts |
JP2005516974A JP4207960B2 (ja) | 2004-01-14 | 2004-12-16 | 感光性重合体組成物、パターンの製造法及び電子部品 |
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US (2) | US8231959B2 (ja) |
EP (1) | EP1708026B1 (ja) |
JP (1) | JP4207960B2 (ja) |
KR (1) | KR101122446B1 (ja) |
CN (2) | CN1902548A (ja) |
AT (1) | ATE527577T1 (ja) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008032865A (ja) * | 2006-07-27 | 2008-02-14 | Asahi Kasei Electronics Co Ltd | ポジ型感光性樹脂組成物 |
JP2010096927A (ja) * | 2008-10-15 | 2010-04-30 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
TWI461849B (zh) * | 2008-07-09 | 2014-11-21 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及聚羥基醯胺樹脂 |
TWI468855B (zh) * | 2007-06-05 | 2015-01-11 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及聚羥基醯胺樹脂 |
JPWO2019003913A1 (ja) * | 2017-06-30 | 2019-06-27 | 住友ベークライト株式会社 | 感光性樹脂組成物、樹脂膜及び電子装置 |
Families Citing this family (2)
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ATE547743T1 (de) * | 2007-03-14 | 2012-03-15 | Fujifilm Corp | Lichtempfindliche zusammensetzung und herstellungsverfahren für ein gehärtetes reliefmuster |
US11048167B2 (en) * | 2015-01-23 | 2021-06-29 | Hd Microsystems, Ltd. | Positive photosensitive resin composition, patterned cured film production method, patterned cured film, and electronic component |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5230207B2 (ja) | 1971-10-26 | 1977-08-06 | ||
JPS6037550A (ja) | 1983-08-09 | 1985-02-26 | Mitsubishi Electric Corp | ポジ型感光性耐熱材料 |
JPS646947A (en) | 1987-05-18 | 1989-01-11 | Siemens Ag | Manufacture of heat resistant positive type resist and heat resistant relief construction |
JPH0336861B2 (ja) | 1982-03-19 | 1991-06-03 | Hitachi Seisakusho Kk | |
JPH04204945A (ja) | 1990-11-30 | 1992-07-27 | Toshiba Corp | 感光性樹脂組成物 |
JPH09302221A (ja) | 1996-05-13 | 1997-11-25 | Sumitomo Bakelite Co Ltd | ポジ型感光性樹脂組成物 |
JP2001042527A (ja) * | 1999-07-29 | 2001-02-16 | Hitachi Chem Co Ltd | 感光性重合体組成物、パターンの製造法及び電子部品 |
JP2001312063A (ja) * | 2000-04-28 | 2001-11-09 | Hitachi Chemical Dupont Microsystems Ltd | 感光性重合体組成物、パターンの製造法及び電子部品 |
JP2002202593A (ja) * | 2000-10-31 | 2002-07-19 | Sumitomo Bakelite Co Ltd | ポジ型感光性樹脂組成物、ポジ型感光性樹脂組成物の製造方法及び半導体装置 |
JP2002328472A (ja) * | 2001-02-26 | 2002-11-15 | Toray Ind Inc | ポジ型感光性樹脂前駆体組成物及びそれを用いた電子部品ならびに表示装置 |
JP2003300923A (ja) * | 2002-04-08 | 2003-10-21 | Honshu Chem Ind Co Ltd | ヒドロキシメチル置換多官能フェノール類 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL177718C (nl) | 1973-02-22 | 1985-11-01 | Siemens Ag | Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren. |
JPS5839437B2 (ja) | 1978-08-24 | 1983-08-30 | 岩崎通信機株式会社 | ボタン電話装置における本電話機接続方式 |
JP2787531B2 (ja) * | 1993-02-17 | 1998-08-20 | 信越化学工業株式会社 | 感光性樹脂組成物及び電子部品用保護膜 |
JP3846103B2 (ja) | 1999-04-16 | 2006-11-15 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性重合体組成物、レリーフパターンの製造法及び電子部品 |
JP4288796B2 (ja) * | 1999-10-29 | 2009-07-01 | 日立化成デュポンマイクロシステムズ株式会社 | ネガ型感光性樹脂組成物、パターンの製造法及び電子部品 |
JP4130297B2 (ja) * | 2000-09-14 | 2008-08-06 | 旭化成エレクトロニクス株式会社 | イミドフェノール化合物 |
JP2002169283A (ja) * | 2000-11-30 | 2002-06-14 | Hitachi Chemical Dupont Microsystems Ltd | 感光性重合体組成物、パターンの製造法及び電子部品 |
JP2002169286A (ja) | 2000-11-30 | 2002-06-14 | Hitachi Chemical Dupont Microsystems Ltd | 感光性重合体組成物、パターンの製造法及び電子部品 |
TW574620B (en) | 2001-02-26 | 2004-02-01 | Toray Industries | Precursor composition of positive photosensitive resin and display device using it |
TWI287028B (en) * | 2002-05-17 | 2007-09-21 | Hitachi Chem Dupont Microsys | Photosensitive polymer composition, method of forming relief patterns, and electronic equipment |
-
2004
- 2004-12-16 JP JP2005516974A patent/JP4207960B2/ja active Active
- 2004-12-16 AT AT04807191T patent/ATE527577T1/de not_active IP Right Cessation
- 2004-12-16 CN CNA2004800401285A patent/CN1902548A/zh active Pending
- 2004-12-16 EP EP04807191A patent/EP1708026B1/en not_active Not-in-force
- 2004-12-16 CN CN201210272318.6A patent/CN102854745B/zh active Active
- 2004-12-16 KR KR1020067015312A patent/KR101122446B1/ko active IP Right Grant
- 2004-12-16 WO PCT/JP2004/018832 patent/WO2005069075A1/ja active Application Filing
- 2004-12-16 US US10/585,738 patent/US8231959B2/en active Active
- 2004-12-23 TW TW101122323A patent/TWI451195B/zh active
- 2004-12-23 TW TW093140217A patent/TWI439807B/zh active
-
2012
- 2012-06-21 US US13/528,989 patent/US8852726B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5230207B2 (ja) | 1971-10-26 | 1977-08-06 | ||
JPH0336861B2 (ja) | 1982-03-19 | 1991-06-03 | Hitachi Seisakusho Kk | |
JPS6037550A (ja) | 1983-08-09 | 1985-02-26 | Mitsubishi Electric Corp | ポジ型感光性耐熱材料 |
JPS646947A (en) | 1987-05-18 | 1989-01-11 | Siemens Ag | Manufacture of heat resistant positive type resist and heat resistant relief construction |
JPH04204945A (ja) | 1990-11-30 | 1992-07-27 | Toshiba Corp | 感光性樹脂組成物 |
JPH09302221A (ja) | 1996-05-13 | 1997-11-25 | Sumitomo Bakelite Co Ltd | ポジ型感光性樹脂組成物 |
JP2001042527A (ja) * | 1999-07-29 | 2001-02-16 | Hitachi Chem Co Ltd | 感光性重合体組成物、パターンの製造法及び電子部品 |
JP2001312063A (ja) * | 2000-04-28 | 2001-11-09 | Hitachi Chemical Dupont Microsystems Ltd | 感光性重合体組成物、パターンの製造法及び電子部品 |
JP2002202593A (ja) * | 2000-10-31 | 2002-07-19 | Sumitomo Bakelite Co Ltd | ポジ型感光性樹脂組成物、ポジ型感光性樹脂組成物の製造方法及び半導体装置 |
JP2002328472A (ja) * | 2001-02-26 | 2002-11-15 | Toray Ind Inc | ポジ型感光性樹脂前駆体組成物及びそれを用いた電子部品ならびに表示装置 |
JP2003300923A (ja) * | 2002-04-08 | 2003-10-21 | Honshu Chem Ind Co Ltd | ヒドロキシメチル置換多官能フェノール類 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008032865A (ja) * | 2006-07-27 | 2008-02-14 | Asahi Kasei Electronics Co Ltd | ポジ型感光性樹脂組成物 |
TWI468855B (zh) * | 2007-06-05 | 2015-01-11 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及聚羥基醯胺樹脂 |
TWI461849B (zh) * | 2008-07-09 | 2014-11-21 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及聚羥基醯胺樹脂 |
JP2010096927A (ja) * | 2008-10-15 | 2010-04-30 | Hitachi Chemical Dupont Microsystems Ltd | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JPWO2019003913A1 (ja) * | 2017-06-30 | 2019-06-27 | 住友ベークライト株式会社 | 感光性樹脂組成物、樹脂膜及び電子装置 |
KR20200015790A (ko) * | 2017-06-30 | 2020-02-12 | 스미또모 베이크라이트 가부시키가이샤 | 감광성 수지 조성물, 수지막 및 전자 장치 |
KR102146294B1 (ko) | 2017-06-30 | 2020-08-21 | 스미또모 베이크라이트 가부시키가이샤 | 감광성 수지 조성물, 수지막 및 전자 장치 |
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Publication number | Publication date |
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CN102854745B (zh) | 2015-05-27 |
ATE527577T1 (de) | 2011-10-15 |
US8852726B2 (en) | 2014-10-07 |
CN102854745A (zh) | 2013-01-02 |
TW201243498A (en) | 2012-11-01 |
US20080220222A1 (en) | 2008-09-11 |
EP1708026A1 (en) | 2006-10-04 |
TWI439807B (zh) | 2014-06-01 |
EP1708026A4 (en) | 2011-02-02 |
JP4207960B2 (ja) | 2009-01-14 |
CN1902548A (zh) | 2007-01-24 |
US8231959B2 (en) | 2012-07-31 |
EP1708026B1 (en) | 2011-10-05 |
US20120263920A1 (en) | 2012-10-18 |
KR101122446B1 (ko) | 2012-02-29 |
KR20070007066A (ko) | 2007-01-12 |
TW200523679A (en) | 2005-07-16 |
TWI451195B (zh) | 2014-09-01 |
JPWO2005069075A1 (ja) | 2007-12-27 |
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