WO2005050680A1 - エレクトレット及びエレクトレットコンデンサー - Google Patents
エレクトレット及びエレクトレットコンデンサー Download PDFInfo
- Publication number
- WO2005050680A1 WO2005050680A1 PCT/JP2004/016835 JP2004016835W WO2005050680A1 WO 2005050680 A1 WO2005050680 A1 WO 2005050680A1 JP 2004016835 W JP2004016835 W JP 2004016835W WO 2005050680 A1 WO2005050680 A1 WO 2005050680A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- electret
- silicon oxide
- electrode
- oxide film
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 69
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 52
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 39
- 239000000463 material Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/01—Details
- H01G5/013—Dielectrics
- H01G5/0134—Solid dielectrics
- H01G5/0136—Solid dielectrics with movable electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
- H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
- H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2499/00—Aspects covered by H04R or H04S not otherwise provided for in their subgroups
- H04R2499/10—General applications
- H04R2499/11—Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
Definitions
- the present invention relates to an electret capacitor having a vibrating electrode and a fixed electrode, and in particular to an electret capacitor formed using MEMS (Micro Electro Mechanical Systems) technology.
- MEMS Micro Electro Mechanical Systems
- the film forming chamber 1 is not exposed to the atmosphere without containing water. Further, the silicon oxide film is heat-treated at 200 ° C. to 400 ° C. in an atmosphere containing oxygen, and then the silicon oxide film is charged.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2002-33241
- an object of the present invention to provide an electret capacitor application element such as an ECM (electret condenser microphone) having a structure excellent in moisture resistance.
- Another object of the present invention is to provide a small ECM which does not require a charge supply circuit by fabricating an ECM composed of electrets having permanent charges by the MEMS technology.
- the electret according to the present invention comprises a charged silicon oxide film and an insulating film formed to cover the silicon oxide film.
- a first electrode having a through hole and a second electrode disposed with an air gap interposed between the first electrode and the first electrode. And an electret formed of a charged silicon oxide film formed on the surface facing the first electrode of the second electrode, and an insulating film is formed to cover the silicon oxide film.
- the second electret capacitor according to the present invention is disposed with the air gap interposed between the fixed film having the first electrode and having the first through hole formed therein, and the fixed film. And an electret formed of a charged silicon oxide film formed on the surface of the second electrode facing the fixed film, and an insulating film is formed to cover the silicon oxide film. It is being done.
- a semiconductor substrate having a region removed so as to leave a peripheral portion, and a vibrating film formed on the semiconductor substrate so as to cover the region.
- the vibrating film has a laminated structure of an extralet, an electrode film, a first insulating film, and a second insulating film, and the electret is covered with the first insulating film and the second insulating film.
- the surface of the charged silicon oxide film that is, the upper surface, the lower surface and the side surface can be protected by the insulating film.
- the silicon oxide film is covered with an insulating film so that the surface of the silicon oxide film, which is a material in which the adsorption of moisture in the atmosphere is remarkable, is not exposed to the atmosphere.
- the insulating film may not directly cover the surface of the charged silicon dioxide film (electret), for example, the upper surface or the lower surface.
- an electrode may be interposed between the lower surface of the silicon oxide film and the insulating film.
- the moisture resistance of the insulating film covering the charged silicon oxide film is preferably higher than that of the silicon oxide film. That is, the moisture resistance of the silicon oxide film covered with the insulating film (predetermined humidity state, for example, the resistance to charge loss in the moisture resistance test) is not covered by the insulating film V, the silicon oxide film. Higher than moisture resistance.
- a silicon nitride film can be used as the insulating film, which has higher moisture resistance than a silicon oxide film.
- an electret condenser application element such as ECM having an electret structure excellent in moisture resistance. Also, by manufacturing such an ECM by MEMS technology, it is possible to provide a small ECM which does not require a charge supply circuit. That is, according to the present invention, it is possible to realize a reliable, compact, high-performance microphone. Furthermore, it becomes possible to widely supply various application devices equipped with the microphone to the society.
- FIG. 1 (a) and 1 (b) are block diagrams of an ECM according to an embodiment of the present invention, and FIG. 1 (a) is a plan view of the ECM, and FIG. ) Is a cross-sectional view of the ECM.
- FIG. 2 is a circuit block diagram of an ECM according to an embodiment of the present invention.
- FIG. 3 is a cross-sectional view of an electret capacitor constituting an ECM according to an embodiment of the present invention.
- FIG. 4 is an electret condenser constituting an ECM according to an embodiment of the present invention It is a top view of the lower electrode and lead-out wiring of the
- FIG. 5 is a plan view of a silicon nitride film in a fixed film of an electret capacitor constituting an ECM according to an embodiment of the present invention.
- ECM which is an element to which the electret capacitor of the present embodiment is applied.
- FIGS. 1 (a) and 1 (b) are block diagrams of the ECM of this embodiment, FIG. 1 (a) is a plan view of the ECM, and FIG. 1 (b) is a cross-sectional view of the ECM. It is.
- the ECM includes a microphone 18, an SMD (surface mount component) 19 such as a capacitor, and an FET (field effect type transition) on a printed circuit board 21.
- the star unit 20 is configured to be mounted.
- the printed circuit board 21 on which the microphone unit 18, the SMD 19 and the FET unit 20 are mounted is protected by a case 22 as shown in FIG. 1 (a). There is.
- FIG. 2 is a circuit block diagram of an ECM of the present embodiment.
- the internal circuit 23 of the ECM of this embodiment is composed of a microphone unit 18, an SMD 19 and an FET unit 20, which are electret capacitors of this embodiment described later. Further, signals are output from the output terminal 24 and the output terminal 25 of the internal circuit 23 to the external terminal 26 and the external terminal 27.
- signals are output from the output terminal 24 and the output terminal 25 of the internal circuit 23 to the external terminal 26 and the external terminal 27.
- the signal is connected to the terminal 29 connected to the external terminal 26 via a capacitor.
- Have an alternating voltage of several tens of millivolts Signal is output.
- Each of the external terminal 27 and the terminal 30 connected thereto is connected to an output terminal 25 which is a GND terminal in the ECM internal circuit 23.
- FIG. 3 is a cross-sectional view of the electret condenser of the present embodiment.
- the electret capacitor 1 of the present embodiment covers the membrane area 113 on the semiconductor substrate 101 having the area (hereinafter referred to as the membrane area 113) removed so as to leave the peripheral portion. It has a parallel plate capacitor structure in which the vibrating film 112 thus formed and the fixed film 110 disposed with the air gap 109 interposed between the vibrating film 112 are electrodes.
- the vibrating film 112 has a lower electrode 104 and the fixed film 110 has a conductive film (upper electrode) 118.
- the diaphragm 112 when the diaphragm 112 receives a sound pressure from above through the plurality of acoustic holes 111 and the air gap 109 provided in the fixed film 110, the diaphragm vibrates according to the sound pressure.
- the membrane 112 vibrates up and down mechanically.
- the distance (inter-electrode distance) between the vibrating membrane 112 (that is, the lower electrode 104) and the fixed membrane 110 changes, thereby changing the capacity (C) of the capacitor.
- the charge (Q) stored in the capacitor is constant
- the capacitance (C) of the capacitor changes
- the voltage (V) between the lower electrode 104 and the fixed film 110 changes. The reason is that it is necessary to physically satisfy the condition of the following formula (1).
- the gate potential of the FET unit 20 changes due to the vibration of the vibrating film 112. Also, the change in the gate potential of the FET unit 20 is output to the external output terminal 29 as a voltage change.
- the detailed configuration of the electret condenser of the present embodiment is as follows.
- the silicon oxide film 102 is formed on the semiconductor substrate 101 on which the electret capacitor of the present embodiment is mounted, and the semiconductor substrate 101 and the silicon oxide film 102 are formed.
- the membrane region 113 is formed by partially removing each of the rims so that each peripheral edge remains. That is, in the membrane region 113, the semiconductor substrate 101 is to be vibrated in order to allow the vibrating membrane 112 to vibrate under the pressure of the external force. It is an area that has been partially removed to leave the periphery.
- a silicon nitride film 103 is formed on the silicon oxide film 102 so as to cover the membrane region 113.
- the lower electrode 104 and the lead-out wiring 115 made of the same conductive film are formed on the silicon nitride film 103 covering the membrane area 113 and the area near the membrane area 113 (a part of the outer area of the membrane area 113), and the lead wire 115 is a silicon nitride film outside the membrane area 113. It is formed on the membrane 103 to be connected to the lower electrode 104 !.
- a silicon oxide film 105 and a silicon nitride film 106 are sequentially formed on the silicon nitride film 103, the lower electrode 104 and the lead-out wiring 115.
- a vibrating film 112 is formed by the silicon nitride film 103, the lower electrode 104 made of a conductive film, the silicon oxide film 105, and the silicon nitride film 106 located in the membrane region 113. Further, in the vibrating film 112, a plurality of leak holes 107 connected to the air gap 109 are formed.
- the silicon nitride film 103 and the silicon nitride film 106 are formed to cover the entire surface of the lower electrode 104 including the inner wall surface of the leak hole 107 and the silicon oxide film 105.
- the silicon oxide film 105 is an electret film storing charges. Specifically, by exposing the silicon oxide film 105 during corona discharge or plasma discharge, charges are injected into the silicon oxide film 105, whereby the silicon oxide film 105 is electretized. Can be formed. At this time, the silicon oxide film 105 may be exposed to corona discharge or plasma discharge, or may be covered with the silicon nitride film 103 and the silicon nitride film 106.
- the conductive film 118 covered by the lower silicon nitride film 114 and the upper silicon nitride film 119 is provided above the vibrating film 112, ie, above the silicon nitride film 106.
- the fixed film 110 is provided.
- the air gap 109 is formed between the vibrating membrane 112 and the fixed membrane 110 in the membrane area 113 and the area near the membrane area 113 (a part of the outer area of the membrane area 113)
- a silicon oxide film 108 is formed between the silicon nitride film 106 or the silicon oxide film 102 and the fixed film 110. That is, the air gap 109 is formed on an area including at least the entire membrane area 113, and the fixed film 110 is formed on the vibrating film 112.
- a plurality of acoustic holes 111 connected to the air gap 109 are formed. Further, an opening 116 is provided in the fixed film 110 including the silicon nitride film 114 and the silicon oxide film 108 so as to partially expose the lead wire 115.
- the lower electrode 104 is electrically connected to the gate of the FET unit 20 shown in FIG. 2 through the lead wire 115.
- the silicon nitride film 119 constituting the fixed film 110 is provided with the opening 117 and the conductive film 118 constituting the fixed film 110 is exposed at the opening 117, whereby the relevant film is concerned.
- the conductive film 118 is electrically connected to the GND terminal 25 of FIG.
- FIG. 4 is a plan view of the lower electrode 104 and the lead-out wiring 115 of the electret capacitor of the present embodiment.
- the lower electrode 104 and the lead wire 115 are made of the same conductive film.
- the lower electrode 104 is formed inside the membrane region 113, and a plurality of leak holes 107 are formed in the peripheral portion of the lower electrode 104. Then, a lead wire 115 is formed to electrically connect the lower electrode 104 to the outside.
- the reason why the lower electrode 104 is formed in the inner portion of the lower electrode 104 will be described below.
- the capacitance of the capacitor in the ECM is determined by the capacitance component that changes due to the vibration of the vibrating membrane and the capacitance component that does not change due to the vibration of the vibrating membrane.
- the capacitance component which does not change due to the vibration of the vibrating film is increased, which largely affects the performance of the ECM.
- the lower electrode 104 of the electret capacitor is provided inside the membrane area 113.
- the large area metal oxide semiconductor (MOS) capacitance consisting of the lower electrode 104, the silicon oxide film 102 and the semiconductor substrate 101 is eliminated.
- the parasitic capacitance can be made to be only a small-area MOS capacitance composed of the lead-out line 115, the silicon oxide film 102 and the semiconductor substrate 101. Therefore, since it is possible to prevent an increase in the invariable capacitance component (parasitic capacitance) in the capacitor, a compact and high performance electret capacitor can be realized.
- components of the vibrating film 112 that is, the silicon nitride film 103, the lower electrode 104 made of a conductive film, the silicon oxide film 105, and the silicon nitride film 106, the membrane region A silicon nitride film 103, a silicon oxide film 105 and a silicon nitride film 106 which are formed so as to cover 113 are formed so as to overlap with the semiconductor substrate 101.
- the ends of the silicon nitride film 103, the silicon oxide film 105 and the silicon nitride film 106 are located on the semiconductor substrate 101.
- the lower electrode 104 of the vibrating film 112 made of a conductive film is formed inside the membrane region 113 so as not to overlap with the semiconductor substrate 101.
- the end of the lower electrode 104 is located inside the membrane region 113.
- the resonance frequency characteristics of the vibrating film 112 can be controlled by adjusting the film thicknesses of the silicon nitride film 103, the silicon oxide film 105, and the silicon nitride film 106. That is, it is possible to facilitate control of the changing capacity component under the pressure of external force in the capacitor, thereby realizing a compact and highly sensitive electret capacitor.
- the silicon nitride film 103 and the silicon nitride film 106 are formed to cover the lower electrode 104 and the silicon oxide film 105.
- the charge of the electret is greatly reduced.
- at least the surface (upper surface, lower surface, and side surface) of the silicon oxide film 105 which is the electret is formed of the silicon nitride film 103 and the silicon nitride film 106 in order to suppress the reduction of the electret charge. Covering.
- the inner wall surface of the leak hole 107 is also completely covered with the silicon nitride film 106 so that the silicon oxide film (electret) 105 is not exposed in the leak hole 107 formed in the vibrating film 112.
- an electret condenser having an electret excellent in moisture resistance and heat resistance can be realized.
- FIG. 5 is a plan view of the silicon nitride film 114 that constitutes the fixed film 110 of the electret capacitor of the present embodiment.
- a plurality of acoustic holes 111 are formed in the fixed film 110 formed above the semiconductor substrate 101 including the membrane region 113.
- Each acoustic hole 111 is disposed in the membrane area 113 and its adjacent area (a part of the outer area of the membrane area 113).
- the operation of the electret condenser of the present embodiment will be described below.
- the vibrating membrane 112 receives an upward force also through the acoustic hole 111 and the air gap 109, the vibrating membrane 112 is mechanically operated according to the sound pressure.
- the electret capacitor of the present embodiment has a parallel plate type capacitor structure in which the lower electrode 104 forming the vibrating film 112 and the conductive film 118 forming the fixed film 110 are electrodes. Therefore, when the vibrating membrane 112 vibrates, the inter-electrode distance between the lower electrode 104 and the conductive film 118 changes, thereby changing the capacity (C) of the capacitor.
- C capacity
- the charge (Q) stored in the capacitor is constant
- the capacitance (C) of the capacitor changes, the voltage (V) between the lower electrode 104 and the fixed film 110 (conductive film 118) changes. It occurs. The reason is that it is necessary to physically satisfy the condition of the following formula (1).
- the lower electrode 104 is electrically connected to the gate of the FET portion 20 in FIG.
- the gate potential of section 20 changes.
- the gate potential of the FET unit 20 changes due to the vibration of the vibrating film 112, and the change of the gate potential of the FET unit 20 is output as the voltage change to the external output terminal 29 in FIG.
- the charged silicon oxide film 105 can be protected by the silicon nitride film 103 and the silicon nitride film 106. That is, the surface of the silicon oxide film 105 is silicon nitride film 103 and silicon nitride film so that the silicon oxide film 105, which is a material in which the adsorption of moisture in the atmosphere is remarkable, is not exposed to the atmosphere.
- the film 106 By covering with the film 106, it is possible to suppress a decrease in the charge amount of the silicon oxide film 105. Thereby, the temporal reliability of the electret can be improved. Therefore, an electret condenser such as ECM having an electret structure excellent in moisture resistance can be provided.
- ECM electret condenser
- the present embodiment it is possible to realize a highly reliable, small and high-performance microphone. Furthermore, to widely supply various applied devices equipped with the microphone to the society It becomes possible.
- the lower surface of the charged silicon oxide film 105 is covered with the silicon nitride film 103 via the lower electrode 104 in the present embodiment, the lower surface of the silicon oxide film 105 is directly silicon nitride film. Cover by.
- the surface of the charged silicon oxide film 105 is covered with the silicon nitride film, but instead of the silicon nitride film, other types having higher moisture resistance than the silicon oxide film are used. You can cover it with an insulating film.
- a conductive material constituting the lower electrode 104 silicon or polysilicon doped with an impurity, gold, refractory metal, aluminum, aluminum-containing alloy or the like is used. You may use it.
- silicon or polysilicon doped with impurities, gold, refractory metal, aluminum or an aluminum-containing alloy or the like may be used as the material of conductive film 118 constituting fixed film 110. ,.
- a substrate made of an insulator instead of the semiconductor substrate 101, a substrate made of an insulator may be used.
- the present invention relates to an electret capacitor having a vibrating electrode and a fixed electrode, and in particular, when applied to an ECM or the like formed using MEMS technology, the ECM has high performance and high reliability. Yes, very useful.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Multimedia (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2004800340597A CN1883020B (zh) | 2003-11-20 | 2004-11-12 | 驻极体和驻极体电容器 |
US10/576,518 US7620192B2 (en) | 2003-11-20 | 2004-11-12 | Electret covered with an insulated film and an electret condenser having the electret |
EP04818870A EP1686599A4 (en) | 2003-11-20 | 2004-11-12 | ELECTRIC AND ELECTRIC CAPACITOR |
KR1020067008847A KR101059364B1 (ko) | 2003-11-20 | 2004-11-12 | 일렉트릿 및 일렉트릿 컨덴서 |
JP2005515593A JP4181580B2 (ja) | 2003-11-20 | 2004-11-12 | エレクトレット及びエレクトレットコンデンサー |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003390554 | 2003-11-20 | ||
JP2003-390554 | 2003-11-20 | ||
JP2004-019616 | 2004-01-28 | ||
JP2004019616 | 2004-01-28 | ||
JP2004-253894 | 2004-09-01 | ||
JP2004253894 | 2004-09-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005050680A1 true WO2005050680A1 (ja) | 2005-06-02 |
Family
ID=34623574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/016835 WO2005050680A1 (ja) | 2003-11-20 | 2004-11-12 | エレクトレット及びエレクトレットコンデンサー |
Country Status (7)
Country | Link |
---|---|
US (1) | US7620192B2 (ja) |
EP (1) | EP1686599A4 (ja) |
JP (1) | JP4181580B2 (ja) |
KR (1) | KR101059364B1 (ja) |
CN (1) | CN1883020B (ja) |
TW (1) | TW200519991A (ja) |
WO (1) | WO2005050680A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1722595A1 (en) * | 2004-03-05 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Electret condenser |
JP2007267272A (ja) * | 2006-03-29 | 2007-10-11 | Matsushita Electric Ind Co Ltd | コンデンサマイクロフォン |
JP2008112755A (ja) * | 2006-10-27 | 2008-05-15 | Matsushita Electric Ind Co Ltd | エレクトレット化方法およびエレクトレット化装置 |
JP2008277473A (ja) * | 2007-04-27 | 2008-11-13 | Sanyo Electric Co Ltd | エレクトレット素子および静電動作装置 |
JPWO2006132193A1 (ja) * | 2005-06-06 | 2009-01-08 | 松下電器産業株式会社 | コンデンサマイクロホンのエレクトレット化方法、エレクトレット化装置およびこれを用いたコンデンサマイクロホンの製造方法 |
JP2009123999A (ja) * | 2007-11-16 | 2009-06-04 | Panasonic Corp | 微小コンデンサマイクロホンの製造方法 |
JP2009141591A (ja) * | 2007-12-05 | 2009-06-25 | Rohm Co Ltd | Memsセンサ |
WO2010035507A1 (ja) * | 2008-09-29 | 2010-04-01 | パナソニック株式会社 | 振動発電器、振動発電装置及び振動発電装置を搭載した通信装置 |
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EP1722595A4 (en) * | 2004-03-05 | 2010-07-28 | Panasonic Corp | ELECTRET condenser |
EP1722595A1 (en) * | 2004-03-05 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Electret condenser |
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JPWO2006132193A1 (ja) * | 2005-06-06 | 2009-01-08 | 松下電器産業株式会社 | コンデンサマイクロホンのエレクトレット化方法、エレクトレット化装置およびこれを用いたコンデンサマイクロホンの製造方法 |
JP2007267272A (ja) * | 2006-03-29 | 2007-10-11 | Matsushita Electric Ind Co Ltd | コンデンサマイクロフォン |
JP2008112755A (ja) * | 2006-10-27 | 2008-05-15 | Matsushita Electric Ind Co Ltd | エレクトレット化方法およびエレクトレット化装置 |
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JP4663035B2 (ja) * | 2008-09-29 | 2011-03-30 | パナソニック株式会社 | 振動発電器、振動発電装置及び振動発電装置を搭載した通信装置 |
US8674582B2 (en) | 2008-09-29 | 2014-03-18 | Panasonic Corporation | Vibration power generator, vibration power generating device and communication device having vibration power generating device mounted thereon |
Also Published As
Publication number | Publication date |
---|---|
TW200519991A (en) | 2005-06-16 |
JPWO2005050680A1 (ja) | 2007-12-06 |
KR101059364B1 (ko) | 2011-08-24 |
EP1686599A4 (en) | 2009-04-15 |
US7620192B2 (en) | 2009-11-17 |
EP1686599A1 (en) | 2006-08-02 |
CN1883020A (zh) | 2006-12-20 |
US20070029894A1 (en) | 2007-02-08 |
JP4181580B2 (ja) | 2008-11-19 |
CN1883020B (zh) | 2011-02-02 |
KR20060115870A (ko) | 2006-11-10 |
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