WO2005001925A1 - 真空処理装置の操作方法 - Google Patents
真空処理装置の操作方法 Download PDFInfo
- Publication number
- WO2005001925A1 WO2005001925A1 PCT/JP2004/009011 JP2004009011W WO2005001925A1 WO 2005001925 A1 WO2005001925 A1 WO 2005001925A1 JP 2004009011 W JP2004009011 W JP 2004009011W WO 2005001925 A1 WO2005001925 A1 WO 2005001925A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing
- cleanliness
- chamber
- common transfer
- medium
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Definitions
- the present invention provides a vacuum processing apparatus for continuously performing a process such as PVD or CVD on a semiconductor wafer or the like using a vacuum processing apparatus having a plurality of processing chambers connected to a common transfer chamber. Related to the operation method.
- the apparatus includes a pre / post-processing chamber, a common transfer chamber connected to the pre / post-processing chamber and having a transfer robot therein, and a plurality of processing chambers connected to the common transfer chamber.
- the wafer to be processed is transferred to the first processing chamber by the transfer robot in the common transfer chamber after preprocessing such as preheating in the pre-Z post-processing chamber.
- the wafer is transferred to each processing room by the transfer robot, and the processing is performed in each processing room.
- high cleanliness processing is physical vapor deposition (PVD) and medium cleanliness processing is CVD.
- PVD physical vapor deposition
- CVD chemical vapor deposition
- the common transfer room is connected to a PVD processing room as a high cleanliness processing room and a CVD processing room as a medium cleanliness processing room.
- PVD processing chambers must achieve a significantly lower pressure (base pressure) than CVD processing chambers, and must highly avoid contamination of the atmosphere inside the processing chamber.
- base pressure base pressure
- the residual gas and particles in the CVD processing chamber, the gas (including outgas) and the contamination source generated from the wafer in a high temperature state after the CVD processing, etc. Etc. may enter through the common transfer chamber.
- an object of the present invention is to provide a method of operating a vacuum processing apparatus capable of reliably preventing contamination in a high-cleanliness processing chamber connected to a medium-cleanliness processing chamber via a common transfer chamber. It is in.
- a high-cleanliness processing chamber that is capable of being evacuated to perform a high-purity processing that highly dislikes atmospheric contamination is performed on an object to be processed.
- a medium-cleanliness processing chamber capable of being evacuated for performing medium-cleanliness processing on the object, which dislikes contamination of the atmosphere to a level lower than the high-cleanliness processing.
- a medium transfer chamber having a medium cleanliness processing container and a transfer mechanism for transferring the object is defined, and the common transfer chamber communicates with the high cleanliness processing chamber and the medium cleanliness processing chamber, respectively.
- a common transport container connected to the high-cleanliness processing container and the medium-cleanliness processing container via a gate vanoleb, respectively, so as to be able to shut off.
- the pressure in the high-cleanliness processing chamber is slightly higher than the pressure in the common transfer chamber, and the common transfer is performed.
- the medium cleanliness A method for operating a vacuum processing apparatus is provided, wherein the pressure in the processing chamber is slightly lower than the pressure in the common transfer chamber.
- the pressure in the high-cleanliness processing chamber is slightly higher than the pressure in the common transfer chamber immediately before the communication.
- the atmosphere in the high-purity processing chamber flows toward the common transfer chamber during communication.
- the pressure in the medium-cleanliness processing chamber was slightly lower than the pressure in the common transfer chamber immediately before the communication.
- the atmosphere in the common transfer chamber flows toward the medium-cleanliness processing chamber. Therefore, it is possible to prevent gas and particles, which are a source of contamination in the medium-cleanliness processing chamber and the common transfer chamber, from entering the high-cleanliness processing chamber.
- the high cleanliness process is physical vapor deposition and the medium cleanliness process is chemical vapor deposition.
- FIG. 1 is a schematic plan view showing an example of a vacuum processing apparatus to which the operation method of the present invention is applied.
- FIG. 2 is a timing chart showing a pressure change by the operation method of the present invention.
- FIG. 1 shows an example of a vacuum processing apparatus to which the operation method of the present invention is applied.
- the processing apparatus 2 shown in FIG. 1 includes four processing chambers 4A, 4B, 4C, and 4D, one common transfer chamber 6, and two load lock chambers 8A and 8B.
- Each chamber is defined by a processing container 4A, 4B, 4C, 4D, a common transfer container 6, and a load lock container 8A, 8B.
- the common transfer container 6 has a substantially hexagonal prism shape, and the processing containers 4 are joined to four sides thereof, and the load lock containers 8A and 8B are joined to the other two sides.
- the common transfer chamber 6 and each of the processing chambers 4A-4D, and the common transfer chamber 6 and each of the load lock chambers 8A and 8B are connected via a gate vanoleb G that can be opened and closed in an airtight manner. ing .
- a gate valve G which can be opened and closed in an airtight manner is provided on the opposite side of the common transfer chamber 6 of each of the load lock chambers 8A and 8B.
- susceptors 12A, 12B, 12 are in each of the processing chambers 4A and 4D.
- a transfer mechanism 14 composed of an articulated arm that can be bent, extended, raised and lowered, and pivoted is provided at a position where the load lock chambers 8A and 8B and the processing chambers 4A to 4D can be accessed.
- the transfer mechanism 14 has two picks Bl and B2 that can bend and stretch independently in the opposite directions, and can handle two wafers at a time. Note that the transport mechanism 14 may be one having only one pick.
- Each of the processing chambers 4A to 4D has a predetermined processing containing an inert gas (Ar gas, N gas, or the like) therein.
- an inert gas Ar gas, N gas, or the like
- Gas supply systems 16A, 16B, 16C and 16D for supplying the processing gas are connected respectively.
- vacuum evacuation systems 18A, 18B, 18C, and 18D for evacuating the internal atmosphere are connected to the processing chambers 4A to 4D, respectively.
- the common transfer chamber 6 and each of the load lock chambers 8A, 8B also have a gas supply system 22A, 24A, 26A for supplying inert gas, and a vacuum exhaust system 22B, 24B, 26B for evacuating the internal atmosphere, respectively. It is connected.
- a pressure gauge P for detecting the internal pressure is provided in each of the common transfer chamber 6 and each of the load lock chambers 8A and 8B.
- the two processing chambers 4A-4D are high-cleanliness processing chambers for performing high-cleanliness processing that highly dislikes atmospheric contamination of the wafer W. .
- the other two processing chambers 4C and 4D are medium-cleanliness processing chambers for performing medium-cleanliness processing on wafers W, which dislikes atmospheric contamination to a lower degree than high-cleanliness processing.
- “high cleanliness” “Medium cleanliness” does not indicate absolute cleanliness but merely indicates the relative degree of cleanliness between the two.
- the high cleanliness processing for example, 1 X 10- 7 Torr (l. 33 X 10- 5 Pa) less ultimate pressure there is a PVD processing required.
- the medium cleanliness processing there is a CVD processing which requires an ultimate pressure of, for example, about 1 ⁇ 10 ⁇ 3 Torr (1.33 ⁇ 10 ⁇ ⁇ a).
- PVD processing for forming a sputter film of Ti, Cu, or the like is performed in the high cleanliness processing chambers 4A and 4B, and TaN, WN, W, TiN, and the like are performed in the medium cleanliness processing chambers 4C and 4D.
- a case where a CVD process for forming a film is performed will be described.
- Each of the vacuum exhaust systems 18A and 18B of the high cleanliness processing chambers 4A and 4B has a cryopump in addition to a dry pump and a turbo molecular pump (not shown) in order to achieve the high vacuum described above. 30 are attached. Further, control of gas supply / exhaust and pressure of each chamber is performed by a controller (not shown) which controls the overall operation of the processing apparatus 2.
- a Ti film is formed by PVD processing in both the high cleanliness processing chambers 4A and 4B, and a TiN film is formed by CVD processing in both the medium cleanliness processing chambers 4C and 4D.
- a barrier film is formed on the wafer W by film formation will be described as an example.
- an inert gas such as Ar gas necessary for forming a plasma is used as a process gas, and there is almost no risk of expanding contamination.
- various source gases are used as a processing gas which is a source of expanding pollution.
- An important point of the present invention is that the atmosphere in the high-cleanliness processing chambers 4A and 4B is common in order to prevent cross contamination in the high-cleanliness processing chambers 4A and 4B when transferring the wafer W. This is to flow to the transfer chamber 6 side, and the atmosphere in the common transfer chamber 6 is to flow to the medium cleanliness processing chambers 4C and 4D.
- the semiconductor wafer W to be processed is taken into the common transfer chamber 6 by the transfer mechanism 14 from the outside (atmosphere side) via one of the load lock chambers 8A and 8B.
- the wafer W is first introduced into one of the high-cleanliness processing chambers 4A and 4B for forming a Ti film by PVD processing, for example, into the processing chamber 4A, and the PVD processing has already been completed. ⁇ C Replaced with W.
- the PVD-processed wafer W taken out of the processing chamber 4A is introduced into one of the medium-cleanliness processing chambers 4C and 4D, for example, the processing chamber 4C, to form a TiN film by C VD processing. Replaced with wafer W for which CVD processing has been completed.
- the wafer W that has been subjected to the continuous processing of the PVD processing (Ti film formation) and the CVD processing (TiN film formation) is unloaded to the outside via one of the load lock chambers 8A and 8B. Is performed. A series of operations as described above are sequentially and repeatedly performed. Note that two or more of the six gate valves G provided around the common transfer chamber 6 are not opened at the same time, and that when one gate valve G is opened, The five gate vanolebs G are always closed.
- FIG. 2A shows a pressure change in the high-cleanliness processing chamber 4A
- FIG. 2B shows a pressure change in the medium-cleanliness processing chamber 4C.
- the interior of the common transfer chamber 6 is constantly evacuated, and a constant pressure of, for example, about 200 mTorr (27 Pa) is maintained. It is assumed that the process times of the PVD process and the CVD process are substantially the same for convenience of explanation.
- a Ti film is formed by PVD processing under a predetermined process pressure (for example, lOmTorr (lPa)) in the high cleanliness processing chamber 4A, Purging and exhausting the atmosphere in chamber 4A with inert gas.
- a predetermined process pressure for example, lOmTorr (lPa)
- inert gas such as Ar gas or N gas
- the pressure in the processing chamber 4A is slightly higher than the pressure in the common transfer chamber 6, for example, 250 mTorr (33 Pa), which is higher by about 50 mTorr (7 Pa).
- a TiN film was formed by CVD under a predetermined process pressure (for example, 100 mTorr (13 Pa)) in the medium cleanliness processing chamber 4C. Then, the atmosphere in the processing chamber 4C is purged with an inert gas and exhausted. After that, Ar gas or N gas
- the gate vanoleb G of the medium cleanliness processing chamber 4C is opened, and the wafer W on which the Ti film is formed is loaded into the processing chamber 4C using the transfer mechanism 14. .
- the wafer W on which the TiN film has been formed in the processing chamber 4C is taken out into the common transfer chamber 6.
- the pressure in the medium-cleanliness processing chamber 4C is maintained slightly lower than the pressure in the common transfer chamber 6, the atmosphere in the common transfer chamber 6 flows into the processing chamber 4C. For this reason, particles and gas that is a source of contamination do not enter the common transfer chamber 6.
- the introduction of the inert gas and the exhaust of the internal atmosphere are continued, so that the particles and gases in the processing chamber 4C are exhausted more efficiently.
- the gate valve G of the processing room 4C is closed. As described above, the wafer W on which the Ti film and the TiN film are continuously formed is carried out to the atmosphere through one of the load lock chambers 8A and 8B.
- the atmosphere in the processing chambers 4A and 4B may always flow to the common transfer chamber 6 side. it can. Further, when loading / unloading (swapping) the wafer W to / from the medium-cleanliness processing chambers 4C and 4D, the atmosphere in the common transfer chamber 6 can always flow toward the processing chambers 4C and 4D. For this reason, it is possible to reliably prevent gas or particles serving as a contamination source from entering the high cleanliness processing chambers 4A and 4B.
- the atmosphere in the common transfer chamber 6 becomes medium-cleanliness processing chambers 4C and 4 Even if it flows into D, these processing chambers 4C and 4D are not contaminated.
- each pressure value in the above-described embodiment is merely an example, and is not limited to the numerical values shown.
- the pressure difference between the processing chambers 4A, 4B and 4C and 4D with respect to the common transfer chamber 6 may be about + 10- + 200 mTorr and about -10 ⁇ 200 mTorr, respectively.
- the pressure is simply lower than that of the common transfer chamber 6, so that the pressure adjustment during the period t2 and the inert gas such as Ar gas and N gas are performed.
- cryopump 30 is used instead of this.
- a turbo molecular pump may be used.
- the temperature of the cryopanel is set at about 100-110 ° K. In this way, of the gas molecules exhausted from the processing chambers 4A and 4B, only water vapor is trapped in the cryopanel, and Ar gas, N gas, etc. are trapped.
- a vacuum processing apparatus provided with two high-cleanliness processing chambers and two medium-cleanliness processing chambers was used. It can be any number greater than one. The number of each processing chamber should be set so as to obtain the optimum throughput in consideration of the processing time in each processing chamber.
- the type of film to be formed is not limited to the combination of the Ti film and the TiN film.
- a Cu film formed by PVD processing, a TaN film formed by CVD processing, a WN film or a W film, or the like is used.
- the present invention can be applied to a case where a barrier film is formed by a combination of the above.
- etching processing is performed using only Ar gas plasma.
- the so-called soft etching process PCEM: pre-clean etching module
- Examples of the medium cleanliness processing include ALD (Atomic Layer Deposition) processing, RTP (Rapid Thermal Processing), and the like, in addition to CVD processing.
- the object to be processed is not limited to a semiconductor wafer, and the present invention can be applied to a case where an LCD substrate, a glass substrate, or the like is to be processed.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003183238A JP4517595B2 (ja) | 2003-06-26 | 2003-06-26 | 被処理体の搬送方法 |
JP2003-183238 | 2003-06-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005001925A1 true WO2005001925A1 (ja) | 2005-01-06 |
Family
ID=33549576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/009011 WO2005001925A1 (ja) | 2003-06-26 | 2004-06-25 | 真空処理装置の操作方法 |
Country Status (2)
Country | Link |
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JP (1) | JP4517595B2 (ja) |
WO (1) | WO2005001925A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8672603B2 (en) | 2009-12-10 | 2014-03-18 | Orbotech LT Solar, LLC. | Auto-sequencing inline processing apparatus |
US8998552B2 (en) | 2007-10-23 | 2015-04-07 | Orbotech LT Solar, LLC. | Processing apparatus and processing method |
US9462921B2 (en) | 2011-05-24 | 2016-10-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
CN113130345A (zh) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | 基片处理***及其维护方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005037822A1 (de) * | 2005-08-08 | 2007-02-15 | Systec System- Und Anlagentechnik Gmbh & Co.Kg | Vakuumbeschichtung mit Kondensatentfernung |
JP4884816B2 (ja) * | 2006-02-02 | 2012-02-29 | 上村工業株式会社 | 浸漬処理装置 |
JP2008032335A (ja) * | 2006-07-31 | 2008-02-14 | Hitachi High-Technologies Corp | ミニエンバイロメント装置、検査装置、製造装置、及び空間の清浄化方法 |
CN102046840B (zh) * | 2008-03-25 | 2012-08-01 | 奥宝科技Lt太阳能有限公司 | 处理装置及处理方法 |
JP5385425B2 (ja) * | 2012-05-24 | 2014-01-08 | 株式会社日立ハイテクノロジーズ | 検査装置及びミニエンバイロメント構造 |
JP6270952B1 (ja) * | 2016-09-28 | 2018-01-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体。 |
WO2020106418A1 (en) * | 2018-11-19 | 2020-05-28 | Mattson Technology, Inc. | Systems and methods for workpiece processing |
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JPH04162709A (ja) * | 1990-10-26 | 1992-06-08 | Fujitsu Ltd | 半導体製造装置および反応処理方法 |
JPH07211761A (ja) * | 1994-01-21 | 1995-08-11 | Tokyo Electron Ltd | 処理装置内の被処理体の搬送方法 |
JPH09199569A (ja) * | 1996-01-17 | 1997-07-31 | Yamaha Corp | ウエハ処理装置 |
JPH10270527A (ja) * | 1997-03-21 | 1998-10-09 | Ulvac Japan Ltd | 複合型真空処理装置 |
JP2002289668A (ja) * | 2001-03-27 | 2002-10-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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JPS60180117A (ja) * | 1984-02-28 | 1985-09-13 | Oki Electric Ind Co Ltd | 半導体製造装置 |
JPH04314981A (ja) * | 1991-04-12 | 1992-11-06 | Shimadzu Corp | クライオポンプ |
JP3155366B2 (ja) * | 1992-08-03 | 2001-04-09 | 日本真空技術株式会社 | ターボ分子ポンプ用クライオトラップ |
JP3061011B2 (ja) * | 1997-07-23 | 2000-07-10 | ダイキン工業株式会社 | クライオポンプ |
US5819545A (en) * | 1997-08-28 | 1998-10-13 | Helix Technology Corporation | Cryopump with selective condensation and defrost |
JP2000274356A (ja) * | 1999-03-19 | 2000-10-03 | Daikin Ind Ltd | クライオポンプの再生装置および再生方法 |
JP4451952B2 (ja) * | 1999-12-24 | 2010-04-14 | キヤノンアネルバ株式会社 | 基板処理装置 |
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2003
- 2003-06-26 JP JP2003183238A patent/JP4517595B2/ja not_active Expired - Lifetime
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2004
- 2004-06-25 WO PCT/JP2004/009011 patent/WO2005001925A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04162709A (ja) * | 1990-10-26 | 1992-06-08 | Fujitsu Ltd | 半導体製造装置および反応処理方法 |
JPH07211761A (ja) * | 1994-01-21 | 1995-08-11 | Tokyo Electron Ltd | 処理装置内の被処理体の搬送方法 |
JPH09199569A (ja) * | 1996-01-17 | 1997-07-31 | Yamaha Corp | ウエハ処理装置 |
JPH10270527A (ja) * | 1997-03-21 | 1998-10-09 | Ulvac Japan Ltd | 複合型真空処理装置 |
JP2002289668A (ja) * | 2001-03-27 | 2002-10-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8998552B2 (en) | 2007-10-23 | 2015-04-07 | Orbotech LT Solar, LLC. | Processing apparatus and processing method |
US8672603B2 (en) | 2009-12-10 | 2014-03-18 | Orbotech LT Solar, LLC. | Auto-sequencing inline processing apparatus |
US9287152B2 (en) | 2009-12-10 | 2016-03-15 | Orbotech LT Solar, LLC. | Auto-sequencing multi-directional inline processing method |
US9462921B2 (en) | 2011-05-24 | 2016-10-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
CN113130345A (zh) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | 基片处理***及其维护方法 |
CN113130345B (zh) * | 2019-12-31 | 2023-12-08 | 中微半导体设备(上海)股份有限公司 | 基片处理***及其维护方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4517595B2 (ja) | 2010-08-04 |
JP2005019739A (ja) | 2005-01-20 |
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