WO2004068608A2 - Organischer feldeffekt transistor, integrierter schaltkreis - Google Patents
Organischer feldeffekt transistor, integrierter schaltkreis Download PDFInfo
- Publication number
- WO2004068608A2 WO2004068608A2 PCT/DE2003/004036 DE0304036W WO2004068608A2 WO 2004068608 A2 WO2004068608 A2 WO 2004068608A2 DE 0304036 W DE0304036 W DE 0304036W WO 2004068608 A2 WO2004068608 A2 WO 2004068608A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ofet
- electrode
- integrated circuit
- electrodes
- connection
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
Definitions
- the invention relates to an organic field effect transistor (OFET) and / or an integrated circuit on an organic basis with a high switching frequency.
- OFET organic field effect transistor
- a disadvantage of the known layout for organic electronics is that no organic conductor tracks are provided.
- the task is to redesign the basic components of all digital circuits such as transistors, inverters and NAND or NOR gates and to create a suitable layout for them.
- the invention therefore relates to an organic field effect transistor, at least a first electrode layer with source and drain electrodes, a semiconducting layer, a Insulator layer and a second electrode layer comprising, in which in the first electrode layer one of the electrodes, source or drain the other except for one side or location, the connection side or location of this electrode, 2-dimensionally, so that a current channel can be formed, that begins and ends on one side or location of an electrode of the first electrode layer.
- the source electrode delimits the drain electrode of each organic field effect transistor (OFET) used on three sides, the respectively enclosed electrode, the drain electrode (drain and source can of course also be interchanged) only open on one side and has only one connection on one side, ie the current channel that forms after the gate voltage is applied begins and ends on the same side of the electrode, the connection side, and is eg U-shaped or meandering.
- OFET organic field effect transistor
- the OFETs are arranged in the NAND or NOR gate such that the connection sides are opposite each other.
- the NAND and / or in the NOR gate there are 2 or more OFETs in parallel (two or more U-shaped channels next to one another in the NOR gate) or one inside the other (two or more U-shaped channels one inside the other in the NAND gate) nested.
- the connecting lines and / or the inputs and outputs are each preferably located in the area between the connection sides.
- the gate electrode also covers a small part of the source or drain electrode in addition to the entire channel.
- the current channel is completely covered and additionally at least part of one or both of the first electrodes, this additional covered part lying in the width in the range from 0 to 20 ⁇ m and in length in the range of the length of the current channel.
- the width of the coverage depends on the adjustment accuracy of the production technology and is in the range from a few (0 to 8) ⁇ m to about 20 ⁇ m, preferably 1 to 5 ⁇ m.
- holes or interruptions in the semiconductor layer that reduce leakage currents between the OFETs are provided. These holes are preferably located between the connection sides. These subsequently created holes or interruptions serve to reduce leakage currents that are generated by the unintentional background doping or contamination of the typically unstructured semiconductor layer that covers the entire chip.
- Yet another embodiment provides that instead of an electrical connection, which is sometimes necessary between the gate electrode and the drain electrode of a load OFET, a through contact is used, which is additionally connected to the output of the inverter. This saves at least one through-contact. Typically, one through-contact is required for the gate-drain connection from the load FET and another at the inverter output for the
- the via is preferably shaped so that it extends to one or both sides of the OFET.
- the leakage currents are minimized on the one hand by the arrangement of the electrodes and on the other hand by the holes in the semiconductor layer.
- the arrangement of the electrodes completely suppresses leakage currents between different inverters or NAND or NOR gates, since neighboring electrodes are each at the same electrical potential (supply voltage or ground), which in turn is a consequence of the fact that an OFET electrode has the respective encloses and shields others up to one side or place.
- the electrode 5 is grounded and the electrode 1 is connected to the supply voltage, two immediately adjacent inverters (one above the other in the figure) then only touch electrodes with the same potential (see also FIG. 5).
- Circuits are much simpler to design in accordance with the invention: the inverters or the logic gates can be assembled in a modular manner without having to maintain distances.
- the channel geometries channel length and width
- the space required for the circuit is smaller, which is why the entire available area can be used to advantage.
- the number of vias is reduced by reducing the number (see FIG. 5).
- Figure 1 shows two layouts for an OFET.
- Figure 2 shows two layouts for an inverter.
- Figure 3 shows a layout for a 2-fold NOR gate.
- FIG. 4 shows a layout for a double NAND gate
- Figure 5 shows a layout for a 5-stage ring oscillator
- FIG. 1 shows an OFET with a first electrode 1 (source or drain) and a second electrode 2 (drain or source), the first electrode 1 enclosing the second electrode 2 except for one side or on three of four sides. All that remains is the connection side 4 of the OFET, on which the first electrode 1 does not surround the second electrode 2.
- Figure la shows the simplest version in which a U-shaped current channel (OFET channel 3) is formed and ⁇
- Figure 1b shows a somewhat more elaborate embodiment in which a meandering OFET channel 3 is formed.
- Figure 2 shows two layouts for an inverter
- Figure 2a shows an inverter with load OFET on output:
- the inverter u holds two OFETs, the load OFET (load OFET) and the control OFET (drive OFET).
- the source electrode 1 of the load OFET surrounds the drain electrode 2 of the load OFET on three sides, an OFET channel 3 is formed, which is covered by the gate electrode 13 of the load OFET, with part of the source also -Electrode 1 and the drain electrode 2 of the load OFET are also covered.
- the gate electrode 13 is connected via the via 10 to both the source electrode 2, the output 11 and the source electrode 7 of the drive OFET.
- the gate electrode 8 of the drive OFET covers channel 6 of the drive OFET and is connected to the input 12.
- Drain electrode 5 of the drive OFET encloses source electrode 7 and thus defines channel 6.
- the holes or interruptions 9 in the semiconductor layer are located between load and drive OFET and prevent leakage currents.
- the supply voltage is applied to electrode 1, electrode 5 is grounded.
- the electrical connection which, depending on the circuit, between the gate electrode 13 and the drain electrode 2 of the load OFETs is necessary, is implemented via a via 10, which is additionally connected to the output 11.
- FIG. 2b The example of an inverter shown in FIG. 2b) has the load OFET gate at the supply voltage.
- the structure is analogous to that of Figure 2a).
- the gate electrode 13 is here connected to the source electrode 1 through the via 10a and not as in 2a) with the via 10a to the output 11.
- the through contact 10b is elongated to the edge of electrode 1, which has the advantage that inverters lying next to one another can use the through contact together.
- the through contact is preferably shaped such that it extends to the sides of the OFET.
- inverters, NAND or NOR gates connected in series have a common through-hole.
- FIG. 3 A layout for a double NOR gate is shown in FIG. 3: The layout essentially corresponds to that of the inverter from FIG. 2b) with the difference that two drive OFETs are connected in parallel.
- the second drive OFET comprises the source electrode 14 and has a common drain electrode 5 with the first drive OFET.
- the gate electrode 15 of the drive OFET is connected to the second input 12b of the NOR gate.
- the entire NOR gate is shielded by the two electrodes 1 and 5, which are connected to the supply voltage or ground.
- a double NAND gate is shown in FIG.
- the NAND layout also essentially corresponds to the inverter from FIG. 2b), with the difference that two drive OFETs are connected in series.
- the second drive OFET is enclosed on three sides by the first.
- Source electrode 7 of the first drive OFET is also the drain electrode of the second drive OFETs.
- the source electrode 14 determines the channel 16 of the second drive OFET and is covered by the gate electrode 15, which is connected to the second input 12a. This layout also results in shielding by electrodes 1 and 5.
- FIG. 5 finally shows a 5-stage ring oscillator which comprises five inverters which are constructed in accordance with FIG. 2b.
- the inverters are arranged so that a common via 10 (10b) in the middle can be used for all inverters.
- the inverters are arranged directly abutting one another, which is only possible due to the layout according to the invention.
- the inverters are connected by the connecting lines 17, and the holes or interruptions in the semiconductor 9 between the connecting lines are also continued in order to prevent leakage currents.
- the output 11 of the ring oscillator branches off on a connecting line 17.
- FIG. 5 shows impressively how efficiently circuit layouts are created with the aid of the invention.
- lines are replaced by direct contact, which e.g. leads to higher switching speed.
- the invention relates to an organic field effect transistor (OFET) and / or an integrated circuit on an organic basis with a high switching frequency. Merging the two ends of the power channel results in compact and fast circuit layouts.
- OFET organic field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003299265A AU2003299265A1 (en) | 2003-01-14 | 2003-12-08 | Organic field effect transistor and integrated circuit |
US10/541,957 US20060145140A1 (en) | 2003-01-14 | 2003-12-08 | Organic field effect transistor and integrated circuit |
EP03799430A EP1584113A2 (de) | 2003-01-14 | 2003-12-08 | Organischer feldeffekt transistor, integrierter schaltkreis |
JP2004567249A JP2006513578A (ja) | 2003-01-14 | 2003-12-08 | 有機電界効果トランジスタおよび集積回路 |
DE10394197T DE10394197D2 (de) | 2003-01-14 | 2003-12-08 | Organischer Feldeffekt Transistor, integrierter Schaltkreis |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10301086 | 2003-01-14 | ||
DE10301086.6 | 2003-01-14 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2004068608A2 true WO2004068608A2 (de) | 2004-08-12 |
WO2004068608A3 WO2004068608A3 (de) | 2004-10-14 |
WO2004068608A8 WO2004068608A8 (de) | 2005-08-04 |
Family
ID=32797260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2003/004036 WO2004068608A2 (de) | 2003-01-14 | 2003-12-08 | Organischer feldeffekt transistor, integrierter schaltkreis |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060145140A1 (de) |
EP (1) | EP1584113A2 (de) |
JP (1) | JP2006513578A (de) |
KR (1) | KR100745570B1 (de) |
CN (1) | CN1757123A (de) |
AU (1) | AU2003299265A1 (de) |
DE (1) | DE10394197D2 (de) |
WO (1) | WO2004068608A2 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005009819A1 (de) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
EP1780815A2 (de) * | 2005-10-31 | 2007-05-02 | Fuji Electric Holdings Co., Ltd. | Organischer Dünnfilmtransistor und dessen Herstellungsmethode |
WO2008043475A1 (de) * | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische schaltung |
US8450731B2 (en) | 2009-02-18 | 2013-05-28 | Polyic Gmbh & Co. Kg | Organic electronic circuit |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100669720B1 (ko) * | 2004-08-06 | 2007-01-16 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치 |
US20080128685A1 (en) * | 2006-09-26 | 2008-06-05 | Hiroyuki Honda | Organic semiconductor device, manufacturing method of same, organic transistor array, and display |
JP2010040897A (ja) * | 2008-08-07 | 2010-02-18 | Sony Corp | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器 |
Citations (6)
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WO1999066540A2 (en) * | 1998-06-19 | 1999-12-23 | Thin Film Electronics Asa | An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production |
WO2001017029A1 (en) * | 1999-08-31 | 2001-03-08 | E Ink Corporation | Transistor for an electronically driven display |
EP1102335A2 (de) * | 1999-11-17 | 2001-05-23 | Lucent Technologies Inc. | Dünnfilmtransistor |
WO2001047044A2 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Forming interconnects |
US6326288B1 (en) * | 1999-07-06 | 2001-12-04 | Elmos Semiconductor Ag | CMOS compatible SOI process |
US6362509B1 (en) * | 1999-10-11 | 2002-03-26 | U.S. Philips Electronics | Field effect transistor with organic semiconductor layer |
Family Cites Families (5)
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JPH069214B2 (ja) * | 1984-09-27 | 1994-02-02 | 株式会社東芝 | 薄膜集積回路の製造方法 |
JPS6230375A (ja) * | 1985-07-31 | 1987-02-09 | Fujitsu Ltd | 薄膜トランジスタとその製造方法 |
TW454101B (en) * | 1995-10-04 | 2001-09-11 | Hitachi Ltd | In-plane field type liquid crystal display device comprising liquid crystal molecules with more than two different kinds of reorientation directions and its manufacturing method |
KR100654158B1 (ko) * | 1999-10-25 | 2006-12-05 | 엘지.필립스 엘시디 주식회사 | 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치 |
JP2003529223A (ja) * | 2000-03-28 | 2003-09-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | プログラム可能な記憶素子を有する集積回路 |
-
2003
- 2003-12-08 DE DE10394197T patent/DE10394197D2/de not_active Expired - Fee Related
- 2003-12-08 CN CNA2003801100774A patent/CN1757123A/zh active Pending
- 2003-12-08 US US10/541,957 patent/US20060145140A1/en not_active Abandoned
- 2003-12-08 AU AU2003299265A patent/AU2003299265A1/en not_active Abandoned
- 2003-12-08 JP JP2004567249A patent/JP2006513578A/ja active Pending
- 2003-12-08 EP EP03799430A patent/EP1584113A2/de not_active Withdrawn
- 2003-12-08 WO PCT/DE2003/004036 patent/WO2004068608A2/de active Application Filing
- 2003-12-08 KR KR1020057012958A patent/KR100745570B1/ko not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1999066540A2 (en) * | 1998-06-19 | 1999-12-23 | Thin Film Electronics Asa | An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production |
US6326288B1 (en) * | 1999-07-06 | 2001-12-04 | Elmos Semiconductor Ag | CMOS compatible SOI process |
WO2001017029A1 (en) * | 1999-08-31 | 2001-03-08 | E Ink Corporation | Transistor for an electronically driven display |
US6362509B1 (en) * | 1999-10-11 | 2002-03-26 | U.S. Philips Electronics | Field effect transistor with organic semiconductor layer |
EP1102335A2 (de) * | 1999-11-17 | 2001-05-23 | Lucent Technologies Inc. | Dünnfilmtransistor |
WO2001047044A2 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Forming interconnects |
Non-Patent Citations (2)
Title |
---|
ASSADI A ET AL: "FIELD-EFFECT MOBILITY OF POLY(3-HEXYLTHIOPHENE)" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, Bd. 53, Nr. 3, 18. Juli 1988 (1988-07-18), Seiten 195-197, XP000644969 ISSN: 0003-6951 * |
KOEZUKA H ET AL: "MACROMOLECULAR ELECTRONIC DEVICE" MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY. SECTION A. MOLECULAR CRYSTALS AND LIQUID CRYSTALS, GORDON AND BREACH PUBLISHERS, CH, CH, Bd. 255, 17. November 1993 (1993-11-17), Seiten 221-230, XP002055362 ISSN: 1058-725X * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005009819A1 (de) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
WO2006092215A2 (de) * | 2005-03-01 | 2006-09-08 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
WO2006092215A3 (de) * | 2005-03-01 | 2007-05-10 | Polyic Gmbh & Co Kg | Elektronikbaugruppe |
EP1780815A2 (de) * | 2005-10-31 | 2007-05-02 | Fuji Electric Holdings Co., Ltd. | Organischer Dünnfilmtransistor und dessen Herstellungsmethode |
EP1780815A3 (de) * | 2005-10-31 | 2008-02-27 | Fuji Electric Holdings Co., Ltd. | Organischer Dünnfilmtransistor und dessen Herstellungsmethode |
WO2008043475A1 (de) * | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische schaltung |
EP2387076A1 (de) * | 2006-10-06 | 2011-11-16 | PolyIC GmbH & Co. KG | Feldeffekttransistor sowie elektrische Schaltung |
US8217432B2 (en) | 2006-10-06 | 2012-07-10 | Polyic Gmbh & Co. Kg | Field effect transistor and electric circuit |
US8450731B2 (en) | 2009-02-18 | 2013-05-28 | Polyic Gmbh & Co. Kg | Organic electronic circuit |
Also Published As
Publication number | Publication date |
---|---|
DE10394197D2 (de) | 2005-12-01 |
CN1757123A (zh) | 2006-04-05 |
JP2006513578A (ja) | 2006-04-20 |
AU2003299265A8 (en) | 2004-08-23 |
US20060145140A1 (en) | 2006-07-06 |
KR20050103195A (ko) | 2005-10-27 |
EP1584113A2 (de) | 2005-10-12 |
AU2003299265A1 (en) | 2004-08-23 |
WO2004068608A8 (de) | 2005-08-04 |
KR100745570B1 (ko) | 2007-08-03 |
WO2004068608A3 (de) | 2004-10-14 |
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