WO2004015774A1 - Commutateur de puissance - Google Patents

Commutateur de puissance Download PDF

Info

Publication number
WO2004015774A1
WO2004015774A1 PCT/DE2003/002202 DE0302202W WO2004015774A1 WO 2004015774 A1 WO2004015774 A1 WO 2004015774A1 DE 0302202 W DE0302202 W DE 0302202W WO 2004015774 A1 WO2004015774 A1 WO 2004015774A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit breaker
breaker according
dielectric
leiteφlatten
recesses
Prior art date
Application number
PCT/DE2003/002202
Other languages
German (de)
English (en)
Inventor
Klaus Olesen
Ronald Eisele
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10257100A external-priority patent/DE10257100B4/de
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Priority to AU2003257379A priority Critical patent/AU2003257379A1/en
Publication of WO2004015774A1 publication Critical patent/WO2004015774A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Definitions

  • IMS instead of ceramic, there is a polymer-glass fiber layer between two applied metal layers.
  • the metallization of the line layer must allow soldering and at the same time the bonding of lines in order to be able to fasten the semiconductor devices thereon.
  • the semiconductors consisting of silicon, are mounted directly onto one of the two solid copper conductor tracks, preferably soldered, without electrically insulating substrates. With this direct assembly, the thermal resistance between the semiconductor and the copper conductor is now only formed by the solder layer and drastically reduced.
  • the copper conductor track also takes on the function of heat spreading and the primary heat sink.
  • the dielectric layer (FIG. 3) can be laminated between the two copper parts, with a correspondingly high pressure being applied at elevated temperature.
  • the typical thickness of such a dielectric layer is 75 to 200 ⁇ m.
  • the thermal resistance of the dielectric in this exemplary embodiment is not added to the measured thermal resistance, since the thin dielectric transfers the heat from the lower copper part to the upper copper part and thus distributes the heat more evenly over the module.
  • An extended plastic frame for example, carries additional contact pins for contacting the outside world (a common epoxy resin circuit board with control electronics).
  • circuit breaker can, for example, be designed so that it heats up during the entire forward operation, in the case of an application in an immobilizer, that is to say when the vehicle is in operation, it is important to also maintain a to be able to offer mesenke. This is exactly what a long, good heat-conducting copper cable can be, even when it is hidden (insulated) installed in a motor vehicle.
  • the corner bores 28 in the upper copper plate 10 in FIG. 2 serve for fastening on a chassis or a further heat sink, wherein further holes can be provided for aligning the parts during the lamination process.
  • the rectangular cutouts 12 are slightly larger than those 13 of the dielectric 18 to be located below (FIG. 3), so that the edges of the cutouts 12 relative to the underlying copper plate 14 (FIG. 4) due to a horizontal overlap of the dielectric 18 are additionally spaced.
  • the dielectric in turn is provided with recesses that allow alignment during the lamination process.
  • a metallic intermediate layer can be used while preserving the advantages of direct mounting according to the invention, which consists, for example, of a copper-tungsten alloy and thus has a thermal conductivity of approximately 230 W / mK compared to the thermal conductivity of only approximately 25 W / mK an electrically insulating intermediate layer made of aluminum oxide (commercially available ceramic circuit board).
  • the compensating layer should not have an electrically insulating effect; on the contrary, sufficient electrical conductivity is assumed.
  • the intermediate layer 44 shown in FIG. 10 between the semiconductor 46 and the copper plate 48 inserted through two solder layers 50 ensures such a low-stress layer structure.
  • the semiconductor is soldered onto the compensation layer and the compensation layer onto the copper plate.
  • it is sufficient to place a plate-like intermediate layer the size of the semiconductor dimension and at least 10% enlargement exclusively or for each semiconductor.
  • the enlargement of the intermediate layer compared to the semiconductor causes the solder layer under the semiconductor to form a meniscus after the soldering process, the thickness of the intermediate layer being between 0.1 mm and 1 mm.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

L'invention concerne un commutateur de puissance comportant deux cartes de circuits imprimés (10, 14) pleines, l'une (10) de ces cartes étant pourvue d'évidements (12) servant à recevoir au moins un composant semi-conducteur (16). Ces deux cartes de circuits imprimés sont isolées l'une de l'autre par un diélectrique (18) pourvu de passages (13) correspondant aux évidements (12) ménagés dans ladite carte de circuits imprimés (10). Le composant ou les composants semi-conducteurs (16) sont fixés au moins sur une des cartes de circuits imprimés (10; 14) et sont en contact avec l'autre carte de circuits imprimés (14; 10) par l'intermédiaire d'une pluralité de fils de connexion (20) servant à conduire des courants élevés, et sont reliés à des bornes de commutation (24) par l'intermédiaire d'autres fils de connexion (22) qui sont montés dans un cadre (26) fixé sur au moins une des cartes de circuits imprimés (14; 10).
PCT/DE2003/002202 2002-07-12 2003-07-02 Commutateur de puissance WO2004015774A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003257379A AU2003257379A1 (en) 2002-07-12 2003-07-02 Power circuit breaker

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10231836 2002-07-12
DE10231836.0 2002-07-12
DE10257100A DE10257100B4 (de) 2002-07-12 2002-12-05 Leistungsschalter
DE10257100.7 2002-12-05

Publications (1)

Publication Number Publication Date
WO2004015774A1 true WO2004015774A1 (fr) 2004-02-19

Family

ID=31716585

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002202 WO2004015774A1 (fr) 2002-07-12 2003-07-02 Commutateur de puissance

Country Status (2)

Country Link
AU (1) AU2003257379A1 (fr)
WO (1) WO2004015774A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB601872A (en) * 1940-07-17 1948-05-13 Philips Nv Improvements in or relating to blocking-layer cell units
DE970502C (de) * 1950-07-01 1958-09-25 Siemens Ag Trockengleichrichteranordnung kleiner Bauart mit einer Vielzahl von Gleichrichtertabletten
US4879630A (en) * 1987-09-03 1989-11-07 Bendix Electronics S.A. Housing for an electronic circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB601872A (en) * 1940-07-17 1948-05-13 Philips Nv Improvements in or relating to blocking-layer cell units
DE970502C (de) * 1950-07-01 1958-09-25 Siemens Ag Trockengleichrichteranordnung kleiner Bauart mit einer Vielzahl von Gleichrichtertabletten
US4879630A (en) * 1987-09-03 1989-11-07 Bendix Electronics S.A. Housing for an electronic circuit

Also Published As

Publication number Publication date
AU2003257379A1 (en) 2004-02-25

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