WO2003036251A1 - Detecteur - Google Patents

Detecteur Download PDF

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Publication number
WO2003036251A1
WO2003036251A1 PCT/JP2001/009145 JP0109145W WO03036251A1 WO 2003036251 A1 WO2003036251 A1 WO 2003036251A1 JP 0109145 W JP0109145 W JP 0109145W WO 03036251 A1 WO03036251 A1 WO 03036251A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
resin
sensor
lead material
sensor device
Prior art date
Application number
PCT/JP2001/009145
Other languages
English (en)
Japanese (ja)
Inventor
Atsushi Miyazaki
Katsuhiko Kikuchi
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to JP2003538702A priority Critical patent/JP4127396B2/ja
Priority to PCT/JP2001/009145 priority patent/WO2003036251A1/fr
Publication of WO2003036251A1 publication Critical patent/WO2003036251A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/0627—Protection against aggressive medium in general
    • G01L19/0645—Protection against aggressive medium in general using isolation membranes, specially adapted for protection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/142—Multiple part housings

Definitions

  • the present invention relates to a sensor device, and particularly to a sensor device using a one-chip semiconductor sensor. Background art
  • Conventional sensor devices include, for example, a semiconductor sensor chip that converts a physical quantity into an electric signal and an arithmetic processing on a sensor output signal of the sensor chip, as described in Japanese Patent Application Laid-Open No. H10-170380. And a semiconductor circuit chip for obtaining a detection signal.
  • the semiconductor circuit chip is mounted on a lead frame and then sealed with a resin to form a package.
  • a recess cavity is formed in a part of the package.
  • a semiconductor sensor chip is placed in the recess cavity and electrically connected to form a sensor unit.
  • the outer case integrally formed with the lead material has a concave opening. A part of the lead material becomes a connector terminal, and the other part is exposed in the concave opening.
  • the sensor unit is arranged in the opening of the concave part, and after electrically connecting the lead material and the lead frame, the sensor unit is configured by closing the cover with a cover. Disclosure of the invention
  • the conventional semiconductor chip may not be able to satisfy the specification. At this time, it was necessary to redesign the customized chip to cope with it, and there was a problem that a great deal of development man-hours and costs were required.
  • An object of the present invention is to provide a sensor device having improved durability compared to the conventional one without requiring a large number of development steps and costs.
  • the present invention provides a part of a connector for electrical connection with the outside.
  • a lead material serving as a connector terminal, a semiconductor sensor chip that converts a physical quantity into an electric signal, and a semiconductor resin chip provided between the semiconductor sensor chip and the connector terminal, and sealed in advance with a first resin.
  • a semiconductor resin chip provided between the semiconductor sensor chip and the connector terminal, and sealed in advance with a first resin.
  • an exterior case in which the lead material and the electronic component are integrally molded with a second resin.
  • the semiconductor sensor chip is housed in a chip case with a terminal in advance, and the terminal and the semiconductor sensor chip are electrically connected to form a sensor unit.
  • the sensor unit is electrically connected and molded integrally with a second resin to form an exterior case.
  • a lead material to which the electronic component is fixed is sealed with the first resin to form a chip case, and a semiconductor sensor chip is provided in the chip case.
  • the sensor unit is electrically connected to the lead material to form a sensor unit, and a part of the lead material of the sensor unit is integrally molded with a second resin so as to be a connector terminal to form an exterior case.
  • the lead material serving as the connector terminal and the lead material serving as the terminal of the chip case sealed with the first resin together with the electronic component are formed of different components. However, they are electrically connected before being integrally molded with the second resin. .
  • the outer case has a recessed opening, and a part of the lead material is exposed in the opening, and the chip case in which the semiconductor sensor chip is disposed is formed. It is arranged in the concave opening.
  • the outer case has a concave opening, a part of the lead material is exposed in the opening, and the semiconductor sensor chip is disposed in the concave opening. And a cover for closing the concave opening.
  • the semiconductor sensor chip is a single chip including a sensor circuit for converting a physical quantity into an electric signal and a compensation circuit for performing arithmetic processing on the sensor output signal.
  • Chip components such as capacitors and resistors.
  • the lead material is made of a metal material
  • the lead material and the electronic component are electrically connected by a joining member of solder or a conductive adhesive
  • the first resin is a thermosetting resin.
  • the second resin is made of a thermoplastic resin.
  • the melting point of the joining member is higher than the molding temperature of the first resin and the second resin
  • the linear expansion coefficient of the first resin is It is a value that falls between the linear expansion coefficients of the lead material and the main constituent material of the electronic component.
  • FIG. 1 is a sectional view showing the configuration of the sensor device according to the first embodiment of the present invention.
  • FIG. 2 is a plan view showing a configuration of a sensor unit and a lead material unit of the sensor device according to the first embodiment of the present invention.
  • FIG. 3 is a cross-sectional view illustrating a configuration of the sensor device according to the second embodiment of the present invention.
  • FIG. 4 is a plan view showing the configuration of the sensor unit of the sensor device according to the second embodiment of the present invention.
  • FIG. 5 is a cross-sectional view illustrating a configuration of the sensor device according to the third embodiment of the present invention.
  • a pressure sensor will be described as an example of the sensor device of the present embodiment.
  • FIG. 1 is a sectional view showing the configuration of the sensor device according to the first embodiment of the present invention.
  • FIG. 2 is a plan view showing a configuration of a sensor unit and a lead material unit of the sensor device according to the first embodiment of the present invention.
  • a sensor unit 11 composed of a chip case 5 with a terminal in which a semiconductor chip 1 is provided, and electronic components 22 and 23 are mounted and sealed in advance with a first resin.
  • the stopped lead material 13 is electrically connected.
  • the semiconductor sensor chip 1 is made of silicon.
  • the semiconductor sensor chip 1 is located at the center The lower surface is subjected to concave processing by etching or the like, and a thin diaphragm 2 is formed at the center.
  • a pressure detection circuit (not shown) is integrally formed on the upper surface of the diaphragm 2 of the semiconductor sensor chip 1 by a semiconductor process.
  • the pressure detection circuit is composed of four diffusion resistors formed on the upper surface of the diaphragm 2, and is configured by wiring the bridge with an aluminum conductor.
  • a characteristic compensation circuit and a protection circuit are integrally formed in a peripheral portion other than the diaphragm on the upper surface of the semiconductor chip 1 by the same semiconductor process.
  • the characteristic compensation circuit is composed of a digital-analog hybrid circuit that adjusts the relationship between pressure and output to a predetermined transfer function.
  • the digital / analog hybrid circuit is mainly composed of a digital unit having an EPROM that stores and holds the characteristic adjustment signal, and an analog unit that amplifies the signal.
  • the characteristic adjustment signal is for adjusting each characteristic obtained in zero-span adjustment, sensitivity adjustment, and temperature characteristic adjustment.
  • the protection circuit is a circuit for protecting an internal circuit from transient electromagnetic noise or the like for an input / output signal provided at an input / output stage connected to the outside.
  • the pressure detection circuit, the characteristic adjustment circuit, and the protection circuit are each electrically connected by an aluminum conductor or the like.
  • the semiconductor sensor chip 1 is joined to the glass table 3 by anodic bonding or the like.
  • the chip sensor is composed of the semiconductor sensor chip 1 and the glass table 3.
  • a vacuum chamber 4 is provided in a portion between the lower surface of the diaphragm 2 of the semiconductor sensor chip 1 and the upper surface of the glass base 3.
  • the linear expansion coefficient of the glass table 3 is substantially equal to the linear expansion coefficient of the semiconductor chip 1.
  • the chip case 5 is made of a thermosetting resin such as an epoxy resin or a thermoplastic resin such as PPS.
  • Terminal 6 is made of phosphor bronze.
  • the terminal 6 is obtained by press-molding a pre-plated nickel material with nickel.
  • the terminal case 6 is formed by insert-molding the terminal 6 with an epoxy resin or the like. After the chip case 5 is formed, the terminals 6 are connected in a rectangular shape, but are cut so that the five adjustment terminals and the three input / output terminals are each independent.
  • a concave chip storage part 7 is provided on the bottom surface of the chip case 5 on the opening side.
  • the terminal 6 is arranged so that a part thereof is exposed around the arrangement portion of the chip holder and a part is drawn out of the chip case 5.
  • the electrodes of the semiconductor sensor chip 1 are wire-bonded to the terminals 6 using wires 9 made of gold, aluminum, or the like. Exposed portions of the semiconductor chip 1 and the glass base 3 provided in the chip case 5, the aluminum wire 9, and the exposed portions of the lead terminals 6 are covered with a fluorosilicone-based or fluorine-based silicone gel 10. .
  • the silicone gel 10 transmits pressure to the semiconductor chip 1 and prevents corrosive liquids and gases from coming into contact.
  • the sensor unit 11 is configured as described above.
  • the sensor unit 11 can adjust the characteristics of the internal circuit of the semiconductor sensor chip by bringing a probe into contact with the adjustment terminal and the input / output terminal 12 and electrically communicating with the external pressure adjustment device. After the characteristic adjustment, the terminals arranged outside the case of the adjustment terminal and the input / output terminal 12 are cut to a predetermined length.
  • the lead material 13 is made of brass.
  • the lead material 13 is formed by pressing a pre-tinned foil material.
  • the right side of the lead material 13 is processed into the shape of the connector terminal 14, and the left side is processed into a terminal shape to be fitted with the input / output terminal 12 of the sensor unit 11.
  • a projection 15 for projection welding is provided on a part of the left terminal. Further, the left end of the terminal is connected to a not-shown hoop material main body.
  • the lead material 13 is configured as a ground terminal 16, an output terminal 17, and a power supply terminal 18 from the upper side of the sheet of FIG. In the vicinity of the center between the ground terminal 16 and the output terminal 17, concave processing portions 19 for disposing the chip capacitors 22 are provided.
  • the depth of the recessed portion 19 of the lead material 13 is preferably about 3 to ⁇ of the thickness of the lead material 13.
  • the ground terminal 16 and the power supply terminal 18 are also provided with a recessed processed portion 20 for disposing the chip capacitor 23. Since the output terminal 17 is interposed between the ground terminal 16 and the power terminal 18, the terminals 17 and 18 extend near the center of the ground terminal 16 and the power terminal 18. It is provided with a portion that protrudes in a direction perpendicular to the direction in which it moves.
  • the concave processing portion 20 is formed in a portion that protrudes in the perpendicular direction.
  • a predetermined amount of a conductive paste or a bonding member 21 such as solder is applied to the concave processing portions 19 and 20 of the lead material 13 using a print mask, a dispenser or the like.
  • Chip capacitors 22 and 23 are disposed on the joining member 21. Electrodes are provided on both sides of the chip capacitors 22 and 23, respectively.
  • a material having a melting temperature of the joining member 21 such as a conductive paste or solder that is higher than the injection molding temperature of the resin 24 is selected. For example, a high-temperature solder (320 ° C) higher than a mold injection molding temperature of 260 ° C is used.
  • the electrodes of the chip capacitors 22 and 23 in contact with the solder coating are irradiated with a predetermined amount of light, or heat is applied from a plate heated to a predetermined amount of temperature to melt the solder. As a result, the lead material 13 and the chip capacitors 22 and 23 are joined.
  • the center portions of the chip capacitors 22 and 23 and the lead material 13 are coated in a rectangular shape by injection molding using epoxy resin 24.
  • the epoxy resin 24 preferably has a glass transition point higher than the operating temperature upper limit of 130 ° C. required for parts mounted on automobiles, and has a linear expansion coefficient equal to or lower than the glass transition point temperature, which is manufactured by Ceramics. It is desirable to be between the linear expansion coefficients of the chip capacitors 22 and 23 and the lead material 13. In this example, an epoxy resin having a glass transition point temperature of 150 ° C. and a linear expansion coefficient equal to or lower than the glass transition point temperature of 11 ppm is used. After the injection molding, the lead material 13 is cut from the hoop material main body while keeping a predetermined shape. Thus, a lead material unit 25 is obtained.
  • the terminal 6 of the sensor unit 11 and the projection 15 for projection welding provided on the lead material 13 of the lead material unit 25 are positioned at predetermined positions, and are electrically connected by projection welding.
  • the pipe 26 has, at one end, a concave groove 28 that fits with the ring-shaped projection 27 of the sensor unit 11, and at the other end, a cylindrical shape whose central part penetrates vertically.
  • a sealing material 29 such as a rubber-based sheet or an epoxy-based adhesive sheet that is melted and cured by heat is provided in the concave groove 28 of the pipe 26, and is a molded metal for forming the outer case 28. Set in the mold.
  • the outer case 30 in which the sensor unit 11, the lead material unit 25, and the pipe 26 are integrally fixed and built-in is obtained by extrusion molding.
  • the outer case 30 is provided with a flange for attachment to the outside (not shown).
  • a pressure sensor is configured.
  • Manufacturing a semiconductor sensor chip using the standard CMOS process can be advantageous in terms of manufacturing cost.However, with regard to device resistance when an excessive voltage is applied due to transient voltage such as static electricity or surge, bipolar It is generally inferior to other processes such as On the other hand, it is possible to increase the resistance by using a one-chip sensor combined with a high-voltage DMOS. However, if the requirements of customers and the industry rise and the protection elements incorporated in one chip can no longer cope, it is necessary to redo the entire chip design, resulting in enormous development costs and development. It will take some time.
  • the chip capacitors 22 and 23 for improving the transient voltage and the electromagnetic resistance are mounted on the input / output terminals 16, 17 and 18 in advance. Without this, the chip resistance can be improved. In addition, even if it is desired to further improve the tolerance according to customer requirements, it is possible to easily respond by changing the capacitance of the chip capacitor.
  • the chip capacitor is arranged so as to straddle the two input / output terminals.
  • a combination of a chip resistor and a capacitor may be used as an electronic component for improving the durability. It can.
  • the arrangement of the chip resistor can be performed in the middle of the input / output terminal, for example, by forming one input / output terminal in the middle and connecting the terminal cut by the chip resistor.
  • the epoxy resin having a linear expansion coefficient between the chip capacitor (6 ppm) and the lead material (17 ppm) is used. (1 lppm) can relieve the thermal stress at the junction of the chip capacitor caused by the temperature change of the usage environment, and can greatly improve the thermal degradation life.
  • epoxy resin has extremely good adhesion to the vicinity of the chip capacitor joint due to the formation of hydrogen bonds between the resin and the surface of the component. Also, When melted during injection molding, the epoxy resin can fill even small gaps of several microns, leaving no space. Therefore, it is possible to prevent corrosion due to intrusion of water or corrosive gas into the solder or conductive adhesive, etc. of the joining members, and to have insufficient adhesion with the insert terminal, which is always a problem with thermoplastic resins such as PBT and PPS. This eliminates the need to reinforce airtightness by applying a silicone adhesive or the like to the connector terminals after molding to cure the problem of poor airtightness.
  • the lead material unit which is covered tightly with epoxy resin, is subjected to insert injection molding with PBT or the like. Since the handling of the unit is very good, and the chip capacitor mounting portion can be disposed inside the resin constituting the outer case, the outer case can be downsized.
  • the lead material pressed in series with the hoop material is cut out in a state where it is connected every 10 pieces, and a further 10 sets of lead materials are arranged, and solder or conductive bonding is performed. Applying the agent all together using a print mask, mounting each chip capacitor, curing it with a badge, and integrating the injection molding in the state of 10-terminals enables mass production at low cost. .
  • FIG. 3 is a cross-sectional view illustrating a configuration of the sensor device according to the second embodiment of the present invention.
  • FIG. 4 is a plan view showing the configuration of the sensor unit of the sensor device according to the second embodiment of the present invention. 1 and 2 indicate the same parts.
  • a chip case 38 is formed by integrally molding a lead material 31 on which electronic components 36 are mounted, and a sensor unit 40 is provided by disposing a semiconductor sensor chip 1. Make up.
  • the lead material 31 is configured as the connector terminal 32, and the other end is configured as the terminal 33 of the chip case 38.
  • the lead material 31 is made of a hoop so that the thickness of the portion that becomes the connector terminal 32 becomes 0.64 mm and the thickness of the terminal 33 of the chip case 38 becomes 0.30 mm. It is formed by cutting in advance and then pressing.
  • the terminals embedded in the chip case 3 8 of the lead material 3 1 A concave groove 34 for mounting H ⁇ is formed.
  • a predetermined amount of a joining member 35 such as solder or conductive paste is applied to the concave groove 34.
  • a chip capacitor 36 is disposed in the concave groove 34, and a predetermined temperature is applied to join the lead material 31 and the chip capacitor 36.
  • the lead material unit 37 is configured.
  • the lead material unit 37 is insert-molded with epoxy resin to form a chip case 38.
  • the chip case 38 has a concave chip holder 7. A part of the terminal of the lead material 31 is exposed around the concave chip storage part 7.
  • a chip chip in which the semiconductor sensor chip 1 and the glass base 3 are bonded to the concave chip chip storage section 7 is disposed via a silicone-based adhesive 8, and the two members are bonded by applying a predetermined heat.
  • the electrode of the semiconductor sensor chip 1 and the terminal portion 32 of the lead material are electrically connected by a wire 9, and the entire concave chip storage portion is filled with fluorosilicone or fluorine silicone gel 10. Cover.
  • the sensor unit 40 is configured.
  • the sensor unit 40 is set in a mold (not shown) via a pipe 26 and a sealant 29, and is subjected to insert molding with a resin such as PBT.
  • a resin such as PBT.
  • the chip material is mounted, and the lead material unit, part of which is a connector terminal, is integrated with the chip case. Since the step of forming the single unit can be eliminated and the step of electrically connecting the lead material and the chip case terminal can be eliminated, the process can be simplified and the cost can be reduced.
  • the size can be made smaller than the embodiment shown in FIG. 1, and the size and weight of the pressure sensor can be further reduced.
  • the chip case terminal 33 and the connector terminal 32 are integrated in advance, but the chip capacitor 36 is integrated with the chip case terminal 33 and the connector terminal is formed as a separate member, and the It is also possible to adopt a method of making a connection. In this case, various connector terminals with different shapes are individually Therefore, it is possible to standardize a sensor unit that does not include a connector terminal, and the cost of the sensor unit can be reduced.
  • FIG. 5 is a cross-sectional view illustrating a configuration of the sensor device according to the third embodiment of the present invention. 1 to 4 indicate the same parts.
  • the lead member 42 is provided with a connector terminal 43 at one end and a projection 44 for welding at the other end.
  • a concave groove 45 for mounting the electronic component 47 is provided near the center.
  • a joining member 46 such as solder is applied to the concave groove 45, and a chip capacitor 47 is provided.
  • the chip capacitor 47 is sealed with an epoxy resin 48 to obtain a lead material unit 49.
  • the outer case 50 is obtained by setting the lead material unit 49 in a mold (not shown) and performing insert molding with a resin such as PBT.
  • the welding projections 44 of the lead material 42 of the outer case 50 are welded to the terminals 52 of the sensor unit 51, and an adhesive 53 is applied to the mating portion of both members from the periphery and hardened.
  • an adhesive 55 is applied to the concave groove 54 provided around the opening of the outer case, and a cover 56 is provided and cured to obtain a pressure sensor.
  • the outer case is more compact than when the electronic components are individually mounted in the opening of the outer case.
  • the size can be reduced, and the connection reliability of electronic components can be improved.
  • tolerance can be improved rather than before, without generating a lot of development man-hours and cost.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

Des matériaux de plomb (13, 31; 42) servent partiellement de terminaux de connexion (14; 32; 43) pour des connexions électriques externes. Une puce de détection à semi-conducteur (1) convertit une quantité physique en un signal électrique. Des composants électroniques (22, 23; 36; 47) sont interposés entre la puce de détection à semi-conducteur (1) et les terminaux de connexion (14; 32; 43) tout en étant préalablement scellés avec une première résine. Des boîtiers (30; 41; 50) sont formés par moulage des matériaux de plomb (13, 31; 42) et des composants électroniques (22, 23; 36; 47) en une seule pièce au moyen d'une seconde résine.
PCT/JP2001/009145 2001-10-18 2001-10-18 Detecteur WO2003036251A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003538702A JP4127396B2 (ja) 2001-10-18 2001-10-18 センサ装置
PCT/JP2001/009145 WO2003036251A1 (fr) 2001-10-18 2001-10-18 Detecteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/009145 WO2003036251A1 (fr) 2001-10-18 2001-10-18 Detecteur

Publications (1)

Publication Number Publication Date
WO2003036251A1 true WO2003036251A1 (fr) 2003-05-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/009145 WO2003036251A1 (fr) 2001-10-18 2001-10-18 Detecteur

Country Status (2)

Country Link
JP (1) JP4127396B2 (fr)
WO (1) WO2003036251A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004354294A (ja) * 2003-05-30 2004-12-16 Hitachi Ltd 圧力センサ
US6955091B2 (en) 2003-05-19 2005-10-18 Seizo Fujimoto Pressure sensor apparatus
JP2008014917A (ja) * 2005-10-21 2008-01-24 Denso Corp 液面検出装置とその製造方法
JP2008032506A (ja) * 2006-07-28 2008-02-14 Denso Corp センサ装置およびその製造方法
JP2010190819A (ja) * 2009-02-20 2010-09-02 Denso Corp センサ装置
JP2011502355A (ja) * 2007-10-30 2011-01-20 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング モジュールケーシング並びにモジュールケーシングを製造する方法
JP2012068229A (ja) * 2010-07-21 2012-04-05 Hella Kgaa Hueck & Co 媒体の物理的な状態変数を検出するためのデバイス
JP2013512422A (ja) * 2009-11-26 2013-04-11 コンチネンタル オートモーティヴ ゲゼルシャフト ミット ベシュレンクテル ハフツング センサモジュールおよびセンサモジュールの製造方法
WO2014136336A1 (fr) * 2013-03-04 2014-09-12 日立オートモティブシステムズ株式会社 Dispositif de capteur

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Publication number Priority date Publication date Assignee Title
JP5953253B2 (ja) * 2013-03-14 2016-07-20 矢崎総業株式会社 センサ及びセンサの製造方法

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US4295117A (en) * 1980-09-11 1981-10-13 General Motors Corporation Pressure sensor assembly
JPS61177797A (ja) * 1985-02-01 1986-08-09 株式会社日立製作所 電子制御装置
JPS62266429A (ja) * 1986-05-14 1987-11-19 Nippon Denso Co Ltd 圧力センサ
US4850227A (en) * 1987-12-22 1989-07-25 Delco Electronics Corporation Pressure sensor and method of fabrication thereof
US5747694A (en) * 1995-07-28 1998-05-05 Nippondenso Co., Ltd. Pressure sensor with barrier in a pressure chamber
US5859759A (en) * 1996-10-02 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor module
US5948991A (en) * 1996-12-09 1999-09-07 Denso Corporation Semiconductor physical quantity sensor device having semiconductor sensor chip integrated with semiconductor circuit chip
US6053049A (en) * 1997-05-30 2000-04-25 Motorola Inc. Electrical device having atmospheric isolation
JP2000337987A (ja) * 1999-05-28 2000-12-08 Mitsubishi Electric Corp 圧力センサ装置
JP2001033335A (ja) * 1999-07-16 2001-02-09 Denso Corp 圧力検出装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
US4295117A (en) * 1980-09-11 1981-10-13 General Motors Corporation Pressure sensor assembly
JPS61177797A (ja) * 1985-02-01 1986-08-09 株式会社日立製作所 電子制御装置
JPS62266429A (ja) * 1986-05-14 1987-11-19 Nippon Denso Co Ltd 圧力センサ
US4850227A (en) * 1987-12-22 1989-07-25 Delco Electronics Corporation Pressure sensor and method of fabrication thereof
US5747694A (en) * 1995-07-28 1998-05-05 Nippondenso Co., Ltd. Pressure sensor with barrier in a pressure chamber
US5859759A (en) * 1996-10-02 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor module
US5948991A (en) * 1996-12-09 1999-09-07 Denso Corporation Semiconductor physical quantity sensor device having semiconductor sensor chip integrated with semiconductor circuit chip
US6053049A (en) * 1997-05-30 2000-04-25 Motorola Inc. Electrical device having atmospheric isolation
JP2000337987A (ja) * 1999-05-28 2000-12-08 Mitsubishi Electric Corp 圧力センサ装置
JP2001033335A (ja) * 1999-07-16 2001-02-09 Denso Corp 圧力検出装置およびその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6955091B2 (en) 2003-05-19 2005-10-18 Seizo Fujimoto Pressure sensor apparatus
JP2004354294A (ja) * 2003-05-30 2004-12-16 Hitachi Ltd 圧力センサ
JP2008014917A (ja) * 2005-10-21 2008-01-24 Denso Corp 液面検出装置とその製造方法
JP2008032506A (ja) * 2006-07-28 2008-02-14 Denso Corp センサ装置およびその製造方法
JP2011502355A (ja) * 2007-10-30 2011-01-20 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング モジュールケーシング並びにモジュールケーシングを製造する方法
JP2010190819A (ja) * 2009-02-20 2010-09-02 Denso Corp センサ装置
JP2013512422A (ja) * 2009-11-26 2013-04-11 コンチネンタル オートモーティヴ ゲゼルシャフト ミット ベシュレンクテル ハフツング センサモジュールおよびセンサモジュールの製造方法
JP2012068229A (ja) * 2010-07-21 2012-04-05 Hella Kgaa Hueck & Co 媒体の物理的な状態変数を検出するためのデバイス
WO2014136336A1 (fr) * 2013-03-04 2014-09-12 日立オートモティブシステムズ株式会社 Dispositif de capteur
JP2014170858A (ja) * 2013-03-04 2014-09-18 Hitachi Automotive Systems Ltd センサ装置

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