WO2003001253A3 - Optoelektronisches bauelement und verfahren zu seiner herstellung - Google Patents

Optoelektronisches bauelement und verfahren zu seiner herstellung Download PDF

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Publication number
WO2003001253A3
WO2003001253A3 PCT/DE2002/002232 DE0202232W WO03001253A3 WO 2003001253 A3 WO2003001253 A3 WO 2003001253A3 DE 0202232 W DE0202232 W DE 0202232W WO 03001253 A3 WO03001253 A3 WO 03001253A3
Authority
WO
WIPO (PCT)
Prior art keywords
filling material
transmitter
receiver
optoelectronic component
production
Prior art date
Application number
PCT/DE2002/002232
Other languages
English (en)
French (fr)
Other versions
WO2003001253A2 (de
Inventor
Bert Braune
Patrick Kromotis
Original Assignee
Osram Opto Semiconductors Gmbh
Bert Braune
Patrick Kromotis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Bert Braune, Patrick Kromotis filed Critical Osram Opto Semiconductors Gmbh
Priority to US10/481,528 priority Critical patent/US7256428B2/en
Priority to JP2003507594A priority patent/JP2004532533A/ja
Publication of WO2003001253A2 publication Critical patent/WO2003001253A2/de
Publication of WO2003001253A3 publication Critical patent/WO2003001253A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/08—Simple or compound lenses with non-spherical faces with discontinuous faces, e.g. Fresnel lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Zum Aufbringen eines optischen Elements, wie beispielsweise einer Linse, auf ein optoelektronisches Bauelement wird vorgeschlagen, die dem Sender oder Empfänger (2) abgewandte Oberfläche (3B) des Füllmaterials (3) direkt mit einem Linsenprofil (7) auszubilden. Dies geschieht erfindungsgemäss durch Einfüllen einer definierten Menge des transparenten Füllmaterials (3) in die Ausnehmung (1A) des Trägerkörpers (1) zum Einbetten des Senders oder Empfängers (2) und durch anschliessendes Aufprägen eines Linsenprofils (7) auf die dem Sender oder Empfänger abgewandte Oberfläche (3B) des transparenten Füllmaterials (3) mittels eines Stempels (8), bevor das transparente Füllmaterial mit dem so aufgeprägten Linsenprofil (7) vollständig ausgehärtet wird.
PCT/DE2002/002232 2001-06-20 2002-06-19 Optoelektronisches bauelement und verfahren zu seiner herstellung WO2003001253A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/481,528 US7256428B2 (en) 2001-06-20 2002-06-19 Optoelectronic component and method for the production thereof
JP2003507594A JP2004532533A (ja) 2001-06-20 2002-06-19 オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10129785.8 2001-06-20
DE10129785A DE10129785B4 (de) 2001-06-20 2001-06-20 Optoelektronisches Bauelement und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
WO2003001253A2 WO2003001253A2 (de) 2003-01-03
WO2003001253A3 true WO2003001253A3 (de) 2003-03-13

Family

ID=7688865

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002232 WO2003001253A2 (de) 2001-06-20 2002-06-19 Optoelektronisches bauelement und verfahren zu seiner herstellung

Country Status (4)

Country Link
US (1) US7256428B2 (de)
JP (1) JP2004532533A (de)
DE (1) DE10129785B4 (de)
WO (1) WO2003001253A2 (de)

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DE102004001312B4 (de) * 2003-07-25 2010-09-30 Seoul Semiconductor Co., Ltd. Chip-Leuchtdiode und Verfahren zu ihrer Herstellung
DE10353604B4 (de) * 2003-08-27 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE10361650A1 (de) * 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zu dessen Herstellung
DE102004014354A1 (de) * 2004-03-24 2005-10-13 G.L.I. Global Light Industries Gmbh Optoelektronisches Bauelement mit einer auf seine Abbildung abgestimmten Abstrahlcharakteristik
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
JP4615981B2 (ja) * 2004-12-08 2011-01-19 スタンレー電気株式会社 発光ダイオード及びその製造方法
US20060189013A1 (en) * 2005-02-24 2006-08-24 3M Innovative Properties Company Method of making LED encapsulant with undulating surface
JP2009513021A (ja) * 2005-10-24 2009-03-26 スリーエム イノベイティブ プロパティズ カンパニー 成形された封入材を有する発光デバイスの製造方法
US7595515B2 (en) 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
KR20080106402A (ko) 2006-01-05 2008-12-05 일루미텍스, 인크. Ｌｅｄ로부터 광을 유도하기 위한 개별 광학 디바이스
KR100764148B1 (ko) * 2006-01-17 2007-10-05 루시미아 주식회사 시트상 형광체와 그 제조방법 및 이를 이용한 발광장치
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
KR100703217B1 (ko) * 2006-02-22 2007-04-09 삼성전기주식회사 발광다이오드 패키지 제조방법
US8044585B2 (en) * 2006-05-02 2011-10-25 Chain Technology Consultant Inc. Light emitting diode with bumps
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
KR100770424B1 (ko) 2006-12-13 2007-10-26 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
US9944031B2 (en) * 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
JP5473609B2 (ja) 2007-02-13 2014-04-16 スリーエム イノベイティブ プロパティズ カンパニー レンズを有するｌｅｄデバイス及びその作製方法
EP2240968A1 (de) 2008-02-08 2010-10-20 Illumitex, Inc. System und verfahren zur bildung einer emitterschicht
JP2010050294A (ja) * 2008-08-22 2010-03-04 Glory Science Co Ltd レンズを有する発光ユニットの製造方法
KR100993317B1 (ko) * 2008-08-26 2010-11-09 삼성전기주식회사 발광 다이오드 패키지의 렌즈 제조방법
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5428358B2 (ja) * 2009-01-30 2014-02-26 ソニー株式会社 光学素子パッケージの製造方法
US7892869B2 (en) * 2009-07-23 2011-02-22 Edison Opto Corporation Method for manufacturing light emitting diode assembly
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
TWM382505U (en) * 2010-01-15 2010-06-11 Cheng Uei Prec Ind Co Ltd Video device
DE102010024545B4 (de) * 2010-06-22 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102010024864B4 (de) 2010-06-24 2021-01-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
JP2012069589A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 発光装置
TWI517452B (zh) * 2011-03-02 2016-01-11 建準電機工業股份有限公司 發光晶體之多晶封裝結構
KR20130096094A (ko) * 2012-02-21 2013-08-29 엘지이노텍 주식회사 발광소자 패키지, 발광 소자 패키지 제조방법 및 이를 구비한 조명 시스템
WO2016004487A1 (en) * 2014-07-10 2016-01-14 "Octa Light Bulgaria" Ad Method and installation for manufacture of light emitting diodes
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Also Published As

Publication number Publication date
US7256428B2 (en) 2007-08-14
DE10129785A1 (de) 2003-01-09
US20050001228A1 (en) 2005-01-06
JP2004532533A (ja) 2004-10-21
DE10129785B4 (de) 2010-03-18
WO2003001253A2 (de) 2003-01-03

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