WO2000034829A1 - Composition a base de resine photosensible - Google Patents
Composition a base de resine photosensible Download PDFInfo
- Publication number
- WO2000034829A1 WO2000034829A1 PCT/JP1999/006729 JP9906729W WO0034829A1 WO 2000034829 A1 WO2000034829 A1 WO 2000034829A1 JP 9906729 W JP9906729 W JP 9906729W WO 0034829 A1 WO0034829 A1 WO 0034829A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- novolak resin
- photosensitive resin
- resin composition
- molecular weight
- soluble
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Definitions
- the present invention relates to a novel positive photosensitive resin composition, and more particularly, it is suitable for manufacturing semiconductors, creating a display surface of a liquid crystal display device of an LCD panel, manufacturing a circuit board such as a thermal head, and the like.
- the present invention relates to a positive photosensitive resin composition containing a photosensitive novolak resin.
- a photolithography method In order to form or process fine elements in a wide range of fields, such as the production of semiconductor integrated circuits such as LSIs, the display surface of liquid crystal display devices for LCD panels, and the manufacture of circuit boards such as thermal heads.
- a photolithography method a positive or negative photosensitive resin composition is used to form a resist pattern.
- a composition containing an alkali-soluble resin and a quinonediazide compound as a photosensitive agent is most widely used as a positive photosensitive resin composition.
- This composition is referred to as, for example, “Novolak resin noquinonediazide compound”, Japanese Patent Publication No. 54-23570 (U.S. Pat. No.
- compositions containing these novolak resins and quinonediazide compounds are Until now, research and development has been carried out from both sides of novolak resin and photosensitive agent. From the viewpoint of the novolak resin, a new resin is of course developed, but a light-sensitive resin composition having excellent characteristics has also been obtained by improving the physical properties of a conventionally known resin.
- Japanese Unexamined Patent Publication Nos. 60-140235 and 1-254243 disclose that novolak resin has a specific molecular weight distribution.
- Japanese Patent Application Laid-Open No. 60-977347, Japanese Patent Application Laid-Open No. Sho 60-1897339, and Japanese Patent No. 25903042 disclose a novolak obtained by fractionally removing low molecular weight components.
- a technique for providing a photosensitive resin composition having excellent properties by using fat is disclosed.
- the degree of integration of integrated circuits of semiconductor devices is increasing year by year, and in the manufacture of semiconductor devices and the like, processing of patterns having a line width of submicron or less has been required.
- processing of patterns having a line width of submicron or less has been required.
- not only resolution but also good pattern reproducibility are required.
- throughput during manufacturing Is also required to be improved.
- it is also an important condition that the sensitivity of the photosensitive resin composition is high and the dimensional accuracy is small in process dependency.
- none of the conventionally known photosensitive resin compositions satisfies all of these conditions at the same time, and has a problem.
- the present invention provides a photosensitive resin composition that simultaneously satisfies all of the properties conventionally required, that is, a high-sensitivity, high-resolution, good pattern can be formed, With an energy ratio 00/34829
- the present invention relates to (i) a reaction product of an alcohol-soluble novolak resin from which low-molecular-weight components have been removed by a fractionation treatment and an o-naphthoquinonediazide compound, or an alcohol-soluble novolak resin and an o-naphtoquinonediazide.
- a photosensitive novolak resin consisting of a fractionated product obtained by removing a low molecular weight component by fractionating a reaction product with a compound, and (ii) a phenolic hydroxyl group represented by the following general formula (I):
- the present invention relates to a photosensitive resin composition characterized by containing a dissolution inhibitor consisting of a low-molecular compound having the same.
- R ,, R 2, R 3 , R 4, R 5, R 6 and R 7 are each independently, H, C, alkyl group -C 4, alkoxy group of C i ⁇ C 4 , Cyclohexyl 00/34829
- the alkali-soluble novolak resin used as a raw material for producing the photosensitive nopolak resin of the present invention comprises at least one kind of phenols and aldehydes such as formalin. Is produced by subjecting a novolak-type phenol resin obtained by polycondensation to a low-molecular-weight component to a fractionation treatment.
- the polycondensation of at least one of these phenols with an aldehyde such as formalin is performed by a conventionally well-known or known method using oxalic acid as a catalyst.
- an aldehyde such as formalin
- any known method can be employed as a fractionation treatment method for removing low molecular weight components in the novolak resin obtained by the polycondensation reaction.
- the separation treatment method include a one-liquid separation method of separating a novolak resin in two kinds of solvents having different solubilities, and a method of removing low molecular weight components by centrifugation.
- removal of low molecular weight components of novolak resin is performed using alkali-soluble novola.
- the reaction may be carried out after the reaction of the block resin and the ⁇ -naphthoquinonediazide compound, but it is better to carry out the reaction before reacting them, as there is no risk that the photosensitive agent will be deactivated by heating during the separation process.
- the separation of the reactants can be performed by the same method as the separation of the novolak resin.
- the dissolution rate of the novolak resin in the aqueous solution of the rubber is from 10 to 180 AZ sec, and preferably from 20 to 150 AZ sec. If the dissolution rate is less than 10 A / sec, it may cause low sensitivity and residual dissolution, and sufficient resolution may not be obtained. If the dissolution rate is greater than 180 AZ sec, after development It is difficult to obtain a good pattern because the film thickness is large.
- the photosensitive novolak resin is a mixture of two or more photosensitive novolak resins
- the novolak resin is reacted with each single o-naphthoquinonediazide compound, and then the two or more photosensitive novolak resins are mixed.
- the o-naphthoquinonediazide compound previously mixed may be produced by reacting it with a novolak resin. However, it is preferable that the o-naphthoquinonediazide compound is reacted individually with the novolak resin and then mixed.
- Alkali soluble novolak resin and o-naphtoquinonediazide compound The reaction may be carried out by any conventionally known method such as, for example, a method in which a soluble novolak resin and o-naphthoquinonediazidesulfonic acid chloride are dissolved in a solvent, and an organic amine solution is dropped into this solution.
- the photosensitive novolak resin of the present invention has a reaction substitution rate of an o-naphthoquinonediazide compound with respect to an alkali-soluble novolak resin from which low molecular weight components have been removed, which is 3 to 3 with respect to a hydrogen atom of a hydroxyl group of the novolak resin.
- reaction substitution ratio is preferably 2 to 5 mol% der shall, further, it is more preferably 4-1 5 mol 0/0. If the reaction substitution ratio is less than 3 mol%, it is difficult to obtain the desired resolution, and if it is more than 25 mol%, there is a strong tendency for the positive pattern to be left undeveloped.
- the photosensitive novolak resin of the present invention and the dissolution inhibitor, which is a low molecular weight compound having a functional hydroxyl group, are dissolved in a solvent to form a positive photosensitive resin composition.
- Solvents for dissolving these components include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and the like, ethylene glycol monoethylene quinoleate etherates, ethylen glycolone monomethine etherate, and the like.
- Ethylene glycol monoolenoethyl acetate such as ethylene glycol monoethylene oleate acetate, propylene glycol monoolenoethylenoate, propylene glycol monoolenoethyl ether, propylene glycol monoolenoethylenoate, etc.
- Pyrene glycols monopyrogenic glycol monomethinoleate
- Propylene glycol monoalkyl acetate such as monoethyl ethyl acetate
- lactate esters such as methyl lactate and ethyl lactate
- aromatic hydrocarbons such as toluene and xylene
- methyl ethyl ketone 2-heptanone
- amides such as N, N-dimethylacetamide and N-methylpyrrolidone, and lactones such as ⁇ -butyrolactone.
- These solvents are used alone or as a mixture of two or more.
- Examples of the compound containing a hydroxyl group include, for example, hydroquinone, resosine; 2,4-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,4, 6—Trihydroxybenzophenone, 2,4,4′—Trihydroxybenzophenone, 2,3,4,4—Tetrahydroxybenzophenone, 2,2 ′, 4,4 '-Tetrahydroxybenzophenone, 2,2,3,4,6' -Hydroxybenzophenones such as pentahydroxybenzophenone; bis (2,4-dihydroxyphenyl) me Hydroxyphenylalkanes such as tan, bis (2,3,4-trihydroxyphenyl) methane, bis (2,4-dihydroxyphenyl) pulp bread; 4,4 ', 3 ", 4 Tetrahydroxy-1,3,5,3 ', 5'—Tetramethylphenyl Methane, 4, 4 ', 2 ", 3", 4''single base pointer arsenide Dorok
- the photosensitive resin composition of the present invention may optionally contain a dye, an adhesion aid, a surfactant, and the like, which are conventionally used as additives of the photosensitive resin composition.
- Dyes include, for example, methyl violet, crystal violet, and malachite green.
- Adhesion aids include alkylimidazolin, butyric acid, alkyl acids, polyhydroxystyrene, polyvinyl methyl ether, and t- Examples of surfactants include butyl novolak, epoxy silane, epoxy polymer, and silane.
- the surfactant include non-ionic surfactants such as polyglycols such as polypropylene glycol or polyoxyethylene lauryl ether and derivatives thereof. Mouth lard
- KP 34 1 Organic siloxane surfactants (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.).
- the photosensitive resin composition of the present invention can be used for inorganic antireflection films such as Tin, SiN, and SiON, and AZ®BARLi, AZ®BARLiII (all of which are available from Clariant Japan). It can also be used in combination with an organic anti-reflection film (manufactured by KK).
- inorganic antireflection films such as Tin, SiN, and SiON, and AZ®BARLi, AZ®BARLiII (all of which are available from Clariant Japan). It can also be used in combination with an organic anti-reflection film (manufactured by KK).
- the positive photosensitive resin composition of the present invention is applied, for example, by spin coating on a substrate such as a silicon wafer provided with an antireflection film, and the substrate on which the photosensitive resin composition is applied is generally The film is king and a photosensitive resin film is formed on the substrate.
- the substrate on which the photosensitive resin film is formed is exposed to radiation such as ultraviolet rays, far ultraviolet rays, X-rays, and electron beams, and then developed with an alkaline developing agent to obtain a high-resolution and good pattern shape. A resist pattern is formed.
- FIG. 1 is a GPC chart of the novolak resin A produced in Synthesis Example 1.
- FIG. 2 is a GPC chart of the novolak resin B obtained by fractionating the novolak resin A.
- the molecular weight of the obtained novolak resin A was measured by gel permeation chromatography (GPC).
- Figure 1 shows the measurement results.
- the polystyrene-equivalent weight average molecular weight of novolak resin A is 6,800, the dispersity (MwZMn) is 10.5, and the content of dimers, trimers, and tetramers is 12.1% and 4.2%, respectively. , 4.5%. Also, 2.38 weight 0 /.
- the dissolution rate in an aqueous solution of tetramethylammonium hydroxide was 199 AZ sec.
- the polystyrene-equivalent weight average molecular weight of Novolak Resin B was 8,000, the dispersity was 7.9, and the content of dimers, trimers, and tetramers was 7.1%, 2.2%, and 3.3%, respectively. .
- the dissolution rate in 2.38% by weight aqueous tetramethylammonium hydroxide solution was 40 k / sec.
- the GPC measurement was performed as follows.
- the column used was a Showa Denko GPC column (one KF-804, two KF-802, one KF-801), with a flow rate of 1. O ml and a mobile phase.
- the measurement was performed with tetrahydrofuran (THF) for liquid chromatography at a column temperature of 40 ° C.
- the positive photosensitive resin composition 1 obtained above was evaluated for sensitivity, resolution, pattern shape, scum-forming property, and micro-grooving property according to the following “Evaluation of photosensitive resin composition”. Table 1 shows the results.
- Exposure energy capable of forming an isolated space of 0.80 / xm as designed by the reticle.
- the cross-sectional shape of the isolated space on the wafer on which the resist pattern was formed was observed with a scanning electron microscope (SEM), and there was no film loss.
- SEM scanning electron microscope
- the rate of increase in pattern dimension at a height of / 3 is less than + 10% ⁇ , the rate is more than + 10% and less than 15% ⁇ , the rate is more than + 15% or less or the film is reduced Is X
- the shape of the isolated pattern at the limit resolution is observed with a scanning electron microscope (SEM).
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- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/622,179 US6475693B1 (en) | 1998-12-10 | 1999-12-01 | Positively photosensitive resin composition |
EP99957401A EP1055969A4 (en) | 1998-12-10 | 1999-12-01 | PHOTOSENSITIVE RESIN COMPOSITION |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35158198 | 1998-12-10 | ||
JP10/351581 | 1998-12-10 |
Publications (1)
Publication Number | Publication Date |
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WO2000034829A1 true WO2000034829A1 (fr) | 2000-06-15 |
Family
ID=18418248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1999/006729 WO2000034829A1 (fr) | 1998-12-10 | 1999-12-01 | Composition a base de resine photosensible |
Country Status (6)
Country | Link |
---|---|
US (1) | US6475693B1 (ja) |
EP (1) | EP1055969A4 (ja) |
KR (1) | KR100690227B1 (ja) |
CN (1) | CN1306337C (ja) |
TW (1) | TWI224714B (ja) |
WO (1) | WO2000034829A1 (ja) |
Cited By (3)
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WO2008016270A1 (en) * | 2006-08-04 | 2008-02-07 | Dongwoo Fine-Chem. Co., Ltd. | Photoresist composition and patterning method thereof |
US7514201B2 (en) | 2001-07-05 | 2009-04-07 | Fujifilm Corporation | Positive photosensitive composition |
JP2016031788A (ja) * | 2014-07-25 | 2016-03-07 | 東京応化工業株式会社 | 有機el表示素子における絶縁膜形成用の感光性樹脂組成物 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003195495A (ja) * | 2001-12-26 | 2003-07-09 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
KR100783603B1 (ko) * | 2002-01-05 | 2007-12-07 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 사용한 패턴의 형성방법 |
JP3894477B2 (ja) * | 2002-02-27 | 2007-03-22 | Azエレクトロニックマテリアルズ株式会社 | 感光性樹脂組成物 |
US6790582B1 (en) * | 2003-04-01 | 2004-09-14 | Clariant Finance Bvi Limited | Photoresist compositions |
US6905809B2 (en) * | 2003-04-01 | 2005-06-14 | Clariant Finance (Bvi) Limited | Photoresist compositions |
JP4112416B2 (ja) * | 2003-04-04 | 2008-07-02 | 東京応化工業株式会社 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
JP2004347682A (ja) * | 2003-05-20 | 2004-12-09 | Tokyo Ohka Kogyo Co Ltd | システムlcd製造用ポジ型ホトレジスト組成物及びレジストパターン形成方法 |
EP1630606B1 (en) * | 2003-06-30 | 2008-08-13 | Think Laboratory Co., Ltd. | Positive photosensitive composition |
US20050033811A1 (en) | 2003-08-07 | 2005-02-10 | International Business Machines Corporation | Collaborative email |
JP3977307B2 (ja) * | 2003-09-18 | 2007-09-19 | 東京応化工業株式会社 | ポジ型フォトレジスト組成物及びレジストパターン形成方法 |
JP4152852B2 (ja) * | 2003-09-30 | 2008-09-17 | 東京応化工業株式会社 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
JP4440600B2 (ja) * | 2003-10-31 | 2010-03-24 | Azエレクトロニックマテリアルズ株式会社 | 厚膜および超厚膜対応化学増幅型感光性樹脂組成物 |
US8353896B2 (en) | 2004-04-19 | 2013-01-15 | The Invention Science Fund I, Llc | Controllable release nasal system |
US20070154835A1 (en) * | 2004-05-27 | 2007-07-05 | Think Laboratory Co., Ltd. | Positive photosensitive composition |
JP2006154477A (ja) * | 2004-11-30 | 2006-06-15 | Think Laboratory Co Ltd | ポジ型感光性組成物 |
US7747903B2 (en) * | 2007-07-09 | 2010-06-29 | Micron Technology, Inc. | Error correction for memory |
KR101432503B1 (ko) | 2008-02-26 | 2014-08-22 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법 |
KR20120107653A (ko) | 2011-03-22 | 2012-10-04 | 삼성디스플레이 주식회사 | 감광성 수지 조성물 및 이를 이용한 패턴의 형성 방법 |
US10723684B2 (en) * | 2014-05-27 | 2020-07-28 | University Of Delaware | Bisphenol alternative derived from renewable substituted phenolics and their industrial application |
TWI678596B (zh) * | 2018-09-13 | 2019-12-01 | 新應材股份有限公司 | 正型光阻組成物及圖案化聚醯亞胺層之形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62160444A (ja) * | 1986-01-09 | 1987-07-16 | Mitsubishi Petrochem Co Ltd | ポジ型レジスト樹脂 |
JPH0667418A (ja) * | 1992-08-14 | 1994-03-11 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
JPH08129255A (ja) * | 1994-10-31 | 1996-05-21 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JPH1069077A (ja) * | 1996-08-27 | 1998-03-10 | Shin Etsu Chem Co Ltd | ポジ型レジスト組成物 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666473A (en) | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
JPS5280022A (en) | 1975-12-26 | 1977-07-05 | Fuji Photo Film Co Ltd | Light solubilizable composition |
DE2847878A1 (de) | 1978-11-04 | 1980-05-22 | Hoechst Ag | Lichtempfindliches gemisch |
JPS61205933A (ja) | 1985-03-08 | 1986-09-12 | Konishiroku Photo Ind Co Ltd | 感光性平版印刷版 |
JP2590342B2 (ja) | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
JP3010963B2 (ja) * | 1993-02-17 | 2000-02-21 | 信越化学工業株式会社 | レジスト組成物 |
JP3796555B2 (ja) * | 1995-08-01 | 2006-07-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
JP3287234B2 (ja) * | 1996-09-19 | 2002-06-04 | 信越化学工業株式会社 | リフトオフ法用ポジ型レジスト組成物及びパターン形成方法 |
JPH10153857A (ja) * | 1996-11-22 | 1998-06-09 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
JP4068253B2 (ja) * | 1999-01-27 | 2008-03-26 | Azエレクトロニックマテリアルズ株式会社 | ポジ型感光性樹脂組成物 |
-
1999
- 1999-12-01 US US09/622,179 patent/US6475693B1/en not_active Expired - Lifetime
- 1999-12-01 EP EP99957401A patent/EP1055969A4/en not_active Withdrawn
- 1999-12-01 WO PCT/JP1999/006729 patent/WO2000034829A1/ja not_active Application Discontinuation
- 1999-12-01 KR KR1020007008523A patent/KR100690227B1/ko active IP Right Grant
- 1999-12-01 CN CNB998027987A patent/CN1306337C/zh not_active Expired - Lifetime
- 1999-12-06 TW TW088121308A patent/TWI224714B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62160444A (ja) * | 1986-01-09 | 1987-07-16 | Mitsubishi Petrochem Co Ltd | ポジ型レジスト樹脂 |
JPH0667418A (ja) * | 1992-08-14 | 1994-03-11 | Japan Synthetic Rubber Co Ltd | ポジ型感放射線性樹脂組成物 |
JPH08129255A (ja) * | 1994-10-31 | 1996-05-21 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JPH1069077A (ja) * | 1996-08-27 | 1998-03-10 | Shin Etsu Chem Co Ltd | ポジ型レジスト組成物 |
Non-Patent Citations (1)
Title |
---|
See also references of EP1055969A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7514201B2 (en) | 2001-07-05 | 2009-04-07 | Fujifilm Corporation | Positive photosensitive composition |
US7977029B2 (en) | 2001-07-05 | 2011-07-12 | Fujifilm Corporation | Positive photosensitive composition |
WO2008016270A1 (en) * | 2006-08-04 | 2008-02-07 | Dongwoo Fine-Chem. Co., Ltd. | Photoresist composition and patterning method thereof |
US8211614B2 (en) | 2006-08-04 | 2012-07-03 | Dongwoo Fine-Chem. Co., Ltd. | Photoresist composition and patterning method thereof |
JP2016031788A (ja) * | 2014-07-25 | 2016-03-07 | 東京応化工業株式会社 | 有機el表示素子における絶縁膜形成用の感光性樹脂組成物 |
Also Published As
Publication number | Publication date |
---|---|
CN1306337C (zh) | 2007-03-21 |
KR100690227B1 (ko) | 2007-03-20 |
CN1290357A (zh) | 2001-04-04 |
EP1055969A1 (en) | 2000-11-29 |
EP1055969A4 (en) | 2002-01-16 |
TWI224714B (en) | 2004-12-01 |
KR20010040651A (ko) | 2001-05-15 |
US6475693B1 (en) | 2002-11-05 |
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