Classifications

• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M3/00—Conversion of dc power input into dc power output
  • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
  • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
  • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
  • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
  • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
  • H02M3/00—Conversion of dc power input into dc power output
  • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
  • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
  • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
  • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
  • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

• the invention relates to an electrical circuit arrangement for transforming magnetic field energy into electrical field energy, with at least a first storage element for magnetic field energy, a second storage element for electrical field energy, a semiconductor valve element and an electrical switching element, which can assume at least a first and a second switching state, which are interconnected in such a way that magnetic field energy can be stored in the first storage element in the first switching state of the switching element, and in the second
• the semiconductor valve element in particular represents a weak point in such known electrical circuit arrangements for transforming magnetic field energy into electrical field energy: on the one hand, the semiconductor valve element is exposed to high voltage fluctuations in the direction of passage in the passage direction of high voltage fluctuations in the amount of approximately the input voltage of the circuit arrangement. On the other hand, the semiconductor valve element should be voltage-resistant in the reverse direction up to a multiple of the input voltage of the circuit arrangement. The semiconductor valve element is subject to a high alternating load between the open and closed states. The performance of the semiconductor valve element thus significantly limits the performance of the entire circuit arrangement.
• semiconductor valve elements are usually made of silicon Si. These have the disadvantage that high reverse voltages can only be achieved by means of correspondingly thick semiconductor junction layers in the semiconductor valve element. Thick semiconductor junction layers, however, have the disadvantage of having high dynamic switching losses.
• the dynamic switching losses arise primarily during the transition of the semiconductor valve element from the blocking state into the through state and vice versa, in particular through the construction and dismantling of minority or majority carriers.
• the dynamic switching losses cause correspondingly high thermal losses, which can lead to the destabilization of the semiconductor valve element.
• the maximum power dissipation that can be dissipated by the semiconductor valve element limits the switching frequency of the switching element of the circuit arrangement and thus its performance due to its maximum thermal stability.
• the first storage element for magnetic field energy and the second storage element for electrical field energy can be dimensioned in inverse proportion to the clock frequency. With higher switching frequencies, their size is reduced accordingly.
• the object of the invention is to provide an electrical circuit arrangement for transforming magnetic field energy into electrical field energy, in which the disadvantages listed above are considerably reduced.
• the semiconductor material of the semiconductor valve element has a band gap of at least 2 eV and a breakthrough field strength of at least 5 * 10/5 V / cm.
• the advantage in particular of further embodiment variants of the electrical circuit arrangement according to the invention is that the Contains semiconductor material of the semiconductor valve element silicon carbide, gallium nitride or diamond.
• the semiconductor material of the semiconductor valve element contains silicon carbide and in particular has a band gap of approximately 3 eV and a breakdown field strength of approximately 25 * 10 -5 V / cm.
• An advantage of a further electrical circuit arrangement according to the invention is that the semiconductor material of the semiconductor valve element contains gallium nitride and in particular has a band gap of approximately 3.2 eV and a breakdown field strength of approximately 30 * 10 -5 V / cm.
• the semiconductor material of the semiconductor valve element contains diamond and in particular has a band gap of approximately 5.5 eV and a breakdown field strength of approximately 100 * 10 -5 V / cm.
• the semiconductor valve element of the electrical circuit arrangements according to the invention Due to the large band gap of the respective semiconductor material of the semiconductor valve element of the electrical circuit arrangements according to the invention in comparison with silicon, it is advantageously brought about that the semiconductor valve element has a high thermal stability.
• the semiconductor valve element thus remains fully functional and in a stable operating state even at high operating temperatures.
• the electrical circuit arrangements according to the invention can also be operated at high operating voltages due to the high breakdown field strength of the respective semiconductor material of the semiconductor valve element in comparison with silicon.
• the electrical circuit arrangement according to the invention can advantageously also be operated as a power circuit with high reverse voltages. Due to the high breakthrough field strength, in particular the semiconductor material thickness of the semiconductor valve element can be reduced. This advantageously reduces the dynamic and thermal losses in the semiconductor valve element.
• the switching frequency of the switching element of the electrical circuit arrangement can be increased.
• a higher switching frequency makes it possible, in particular, to be able to dimension the components, preferably the first storage element for magnetic field energy and the second storage element for electrical field energy, much smaller.
• this is associated with an increase in the performance of the entire electrical circuit arrangement.
• the size of the electrical circuit arrangement is reduced.
• the semiconductor valve element is a diode or, in particular, a Sclvc tk - - o e.
• Schottky diodes with a semiconductor material according to the properties listed above have considerable advantages.
• the Schottky diode need have no or only a slight oversizing, at least with regard to the technical properties.
• the reverse voltage of the Schottky diode is high enough to use the electrical circuit arrangements according to the invention even at high operating voltages.
• the semiconductor-metal transition of the Schottky diode can be made thin despite the high reverse voltage capacities, so that the dynamic losses are low even at high switching frequencies of the switching element. This makes it possible to use the advantageous characteristics of Schottky diodes as semiconductor valve elements of the electrical circuit arrangement according to the invention, even at high operating voltages and at high switching frequencies.
• the circuit arrangements according to the invention are in a step-up converter, Buck divider, forward converter or power factor controller circuit used.
• FIG. 1 shows an electrical circuit arrangement according to the invention for transforming magnetic field energy into electrical field energy
• FIG. 2 shows a representation of band gaps with at least 2 eV of semiconductor materials of the semiconductor valve element, with a transition, for example, to a metallic Schottky contact,
• FIG. 6 shows a flow converter circuit with an electrical circuit arrangement according to the invention
• FIG. 7 shows a power factor controller circuit with an electrical circuit arrangement according to the invention.
• FIG. 1 shows an example of an electrical circuit arrangement G according to the invention for transforming W from magnetic field energy M into electrical field energy E.
• the electrical circuit arrangement G is in particular the input voltage UE is supplied and has at least a first storage element L for magnetic field energy M and a second storage element C for electrical field energy E.
• the electrical circuit arrangement G has a semiconductor valve element D and an electrical switching element S.
• the electrical switching element S can assume at least a first and a second switching state S1 or S2.
• the first storage element L, the second storage element C, the semiconductor valve element D and the electrical switching element S are interconnected in such a way that magnetic field energy M can be stored in the first storage element L in the first switching state S1 of the switching element S, and the in the second switching state S2 of the switching element S.
• magnetic field energy M can be transformed from the first storage element L into the second storage element C for electrical field energy E.
• the energy flow resulting from the transformation of magnetic field energy M into electrical field energy E is conducted via the semiconductor valve element D.
• the half valve element D in particular has one. Passage direction and a blocking direction, so that a transformation of magnetic field energy M into electrical field energy E is made possible in the passage direction, but the electrical field energy E stored in the second storage element C cannot react on the first storage element L due to the blocking direction.
• a current II fed from the input voltage UE flows through the first storage element L, as a result of which magnetic field energy M is built up in it.
• the input voltage UE can be an AC or a DC voltage.
• the current II is interrupted by the transition of the switching element S to the second switching state S2, as a result of which a current 12 which is fed at least from the first storage element L and flows through the semiconductor valve element D in the direction of its passage.
• the current 12 flows into the second storage element C and causes the structure of electrical field energy E, in particular in the form of the voltage UC.
• the first storage element L is preferably an inductive element, for example a coil.
• the second storage element C is preferably a capacitive element, for example a capacitor.
• the electrical switching element S is preferably a semiconductor switching element, for example a field effect transistor.
• the semiconductor valve element D is connected in parallel with at least one further, in particular identical semiconductor valve element D '. The parallel connection is advantageously possible without further additional measures, since the semiconductor valve element D or D 'described further below has a positive temperature coefficient. This is in particular in the form of a diode, preferably a Schottky diode. In the following, the invention is further described with reference to the components listed here as examples.
• the semiconductor material of the semiconductor valve element D according to the invention has a band gap VB of at least 2 eV, in electron volts, and a breakthrough field strength EK of at least 5 * 10 -5 V / cm, in volts per centimeter, on.
• the representation "10 ⁇ 5" corresponds to the representation "1E + 5".
• the band gap VB of the semiconductor material of the semiconductor valve element D is symbolized with at least 2 eV according to the invention.
• the band gap VB is the energy difference between the energy level of the valence band EV and the energy level of the conduction band
• the energy level of the Fermini level is also shown.
• the illustration in FIG. 2 is playfully related to a semiconductor transition to a metallic Schottky contact in the direction of the ordinate.
• the breakdown field strength symbolized EK of the semiconductor material of the semiconductor valve element D according to the invention is at least 5 10 5 ⁇ / cm * V shown.
• Values of a doping in l / cm ⁇ 3 of the semiconductor material of the semiconductor valve element D are shown as examples on the abscissa of the illustration in FIG. 3. The size specifications of this doping are only examples of selected sizes.
• the semiconductor material of the semiconductor valve element D contains, in particular, silicon carbide SiC, gallium nitride GaN or diamond Cdia, ie carbon with a diamond crystal lattice structure, the semiconductor material having a band gap VB of at least 2 eV and a breakdown field strength EK of has at least 5 * 10 ⁇ 5 V / cm.
• nrf " ⁇ ngs variantn invention includes the semiconductor material of the semiconductor valve element D, in particular silicon carbide SiC, gallium nitride GaN, or diamond CDIA.
• the semiconductor material of the semiconductor valve element D of an embodiment of the electrical circuit arrangement G according to the invention or an embodiment variant of the invention contains silicon carbide SiC, then this has in particular a band gap VB of approximately 3 eV and a breakdown field strength EK of approximately 25 * 10 -5 V / cm , as exemplified in Figures 2 and 3.
• the semiconductor material of the semiconductor valve element D contains an embodiment of the electrical circuit arrangement G according to the invention or an embodiment variant of the invention gallium nitride GaN, then this has in particular a band gap VB of approximately 3.2 eV and a breakdown field strength EK of approximately 30 * 10 -5 V / cm , as exemplified in Figures 2 and 3.
• the semiconductor material of the semiconductor valve element D contains an embodiment of the electrical circuit arrangement G according to the invention or an embodiment variant of the invention diamond Cdia, this has in particular a band gap VB of about 5.5 eV and a breakdown field strength EK of about 100 * 10 -5 V / cm , as is also shown by way of example in FIGS. 2 and 3.
• FIGS. 4 to 7 show exemplary advantageous circuit arrangements in which the invention is used.
• FIG. 4 shows an example of a step-up converter circuit H with an electrical circuit arrangement G according to the invention, to which in particular an input voltage UE1 is supplied and which has an output voltage UAl.
• the step-up converter circuit H has, for example, a coil Lll, a field effect transistor Sll, a semiconductor ClJ oX DU .. in particular a Schottky diode, and a capacitor Cll.
• the coil Lll is in series with the
• the field effect transistor Sll and the capacitor Cll are arranged behind the coil Lll.
• the semiconductor diode DU is arranged in the forward direction between the field effect transistor Sll and the capacitor Cll and in series with the coil Lll.
• the semiconductor diode D11 has a semiconductor material according to the invention.
• FIG. 5 shows an example of a buck converter circuit T with an electrical circuit arrangement G according to the invention, to which in particular an input voltage UE2 is supplied and which has an output voltage UA2.
• the buck converter circuit T has, for example, a coil L21, a field effect transistor S21 a terdiode D21, in particular a Schottky diode, and a capacitor C21.
• the field effect transistor S21 is connected in series with the input voltage UE2.
• the semiconductor diode D21 and the capacitor C21 are arranged behind the field effect transistor S21 in the reverse direction.
• the coil L21 is arranged between the semiconductor diode D21 and the capacitor C21 and in series with the field effect transistor S21.
• the semiconductor diode D21 has a semiconductor material according to the invention.
• FIG. 6 shows an example of a forward converter circuit DW with an electrical circuit arrangement G according to the invention, to which in particular an input voltage UE3 is supplied and which has an output voltage UA3.
• a primary circuit DW1 and / or a secondary circuit DW2 has the forward converter ⁇ ci-ai ung ⁇ -? , -lie electrical circuit arrangement G according to the invention.
• the primary and the secondary circuit DW1 and DW2 are preferably decoupled from one another by means of a transformer T3.
• the primary circuit DW1 has, for example, a first capacitor C31, a first coil L31, a first semiconductor diode D31, in particular a Schottky diode, and a first field effect transistor S31.
• the first coil L31 is a partial winding of the primary coil winding, in particular a so-called demagnetization winding, of the transformer T3.
• the secondary circuit DW2 has, for example, a second semiconductor diode D32, in particular a Schottky diode, a third semiconductor diode D33, a second coil L32 and a second capacitor C32.
• the capacitor C31, the first coil L31 connected in series and in the reverse direction with the first semiconductor diode D31, and the first field effect transistor S31 connected in series with the primary side of the transformer T3 are arranged in parallel with the input voltage UE3.
• the field effect transistor S31 is switched on and off, magnetic field energy from the first coil L31 is transformed into the first capacitor C31 as electrical field energy.
• the third semiconductor diode D33 is connected in series to the secondary side of the transformer T3 in the forward direction. Parallel to the secondary side of the transformer T3, the second semiconductor diode D32 and the second capacitor C32 are arranged behind the third semiconductor diode D33 in the reverse direction.
• the second coil L32 is arranged between the second semiconductor diode D32 and the second capacitor C32 and in series with the third semiconductor diode D33.
• the first and / or the second semiconductor diode D31 or D32 have a semiconductor material according to the invention.
• the third semiconductor diode D33 can also have a semiconductor material according to the invention.
• a power factor circuit PFC of an electrical circuit arrangement G according to the invention is shown by way of example in FIG. 7, to which an input voltage UE4 is supplied in particular and which has an output voltage UA4.
• the power factor circuit PFC is also referred to in particular as a so-called "power factor controller" circuit.
• An outer cascade circuit PA and / or an inner cascade circuit PI of the power factor circuit PFC has the electrical switching circuit according to the invention. arrangement G on.
• the outer cascade circuit PA has, for example, a first coil L41, a first field effect transistor S41 and a first semiconductor diode D41, in particular a Schottky diode.
• the inner cascade circuit PI has, for example, a second coil L42, a second semiconductor diode D42, in particular a Schottky diode, and a third semiconductor diode D43.
• the outer and inner cascade circuits PA and PI have a common capacitor C41.
• the first coil L41 is in series with the input voltage UE4.
• the first field effect transistor S41 and the capacitor C41 are arranged in parallel to the input voltage UE4 behind the first coil L41.
• the first semiconductor diode D41 is arranged in the through direction.
• the second coil L42 is connected to the common node between the first coil L41, the first field effect transistor S41 and the first semiconductor diode D41.
• Parallel to the first field effect transistor S41, the second field effect transistor S42 and the capacitor C41 are arranged in series with the third semiconductor diode D43 connected in the forward direction and behind the second coil L42.
• the second semiconductor diode D42 is arranged in the forward direction between the second field effect transistor S42 and the capacitor C41 and in series with the second coil L42.
• the first and / or the second semiconductor diode D41 or D42 but preferably both, have a semiconductor material according to the invention.
• the third semiconductor diode D43 can also have a semiconductor material according to the invention.

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Dc-Dc Converters (AREA)
• Electrodes Of Semiconductors (AREA)
• Rectifiers (AREA)
• Semiconductor Memories (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (1)

Family

ID=7852743

Family Applications (1)

Country Status (8)

Cited By (7)

Families Citing this family (7)

Citations (7)

Family Cites Families (1)

• 1997
  • 1997-12-19 DE DE19756873A patent/DE19756873A1/de not_active Withdrawn
• 1998
  • 1998-11-30 TW TW087119826A patent/TW416181B/zh active
  • 1998-12-08 KR KR1020007006803A patent/KR20010033341A/ko not_active Application Discontinuation
  • 1998-12-08 WO PCT/DE1998/003603 patent/WO1999033160A1/de not_active Application Discontinuation
  • 1998-12-08 CN CN98813317A patent/CN1290422A/zh active Pending
  • 1998-12-08 JP JP2000525963A patent/JP2001527377A/ja not_active Withdrawn
  • 1998-12-08 EP EP98963391A patent/EP1040556A1/de not_active Withdrawn
  • 1998-12-08 CA CA002315020A patent/CA2315020A1/en not_active Abandoned

Patent Citations (7)

Also Published As

Similar Documents

Legal Events