CA2315020A1 - Electrical circuit arrangement for transforming of magnetic field energy into electric field energy - Google Patents
Electrical circuit arrangement for transforming of magnetic field energy into electric field energy Download PDFInfo
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- CA2315020A1 CA2315020A1 CA002315020A CA2315020A CA2315020A1 CA 2315020 A1 CA2315020 A1 CA 2315020A1 CA 002315020 A CA002315020 A CA 002315020A CA 2315020 A CA2315020 A CA 2315020A CA 2315020 A1 CA2315020 A1 CA 2315020A1
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- Prior art keywords
- energy
- electrical
- active semiconductor
- field energy
- circuit arrangement
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
- Semiconductor Memories (AREA)
Abstract
An electrical circuit arrangement (G) for transforming (W) magnetic field energy (M) into electric field energy (E) has at least one first accumulator element (L) for magnetic field energy (M), a second accumulator element (C) for electric field energy (E), a semiconductor valve element (D) and an electrical switching element (S). According to the invention, the semiconductor material of which the semiconductor valve element (D) is made has a band gap (VB) of at least 2 eV and a breakdown field strength (EK) of at least 5*10~5 V/cm. The semiconductor material of which the semiconductor valve element (D) is made contains, in particular, silicon carbide (SiC), gallium nitride (GaN) or diamond (Cdia). The semiconductor valve element (D) is, in particular, a semiconductor diode, preferably a Schottky diode. Owing to the low dynamic switching losses of the semiconductor valve element (D) according to the invention, the electrical circuit arrangement (G) can be used with the smallest components even at high operating voltages and high switching frequencies.
Description
E00 ~'ed ~essl8 ! 3~~~5-0l 90Y1l;1 l6lA EY+-road ~eIO~ZO 00-9l-unf P~~l~~~a y Description Elcotriaal circuit arrangement for tranaiormation of magnetic field energy into alectrioal field energy The invention rolateo to an electrical circuit arrangement fc~r tran~fc~rrn~rt.lum ut magnetic field energy into electrioctl field energy having at least one rirst rnr_c~yy-~~u.cagr~ element for magnetic field energy, a second energy-storage element !or AJ r~~fi.ri c:~ 1 f Lrld ~suwLgy. an active semiconductor element and an electrical 'witching P1 amanfi, wTrlc:li c:dn d~saume at least one first and one second switching state, which are cannerted rrt nnP another in ~ucar d way that in the brat switching state of the switching ~lom~ent, tt,R
ma7netlr field ~ner~y eau be Stored in the first onQrgy-storage element, and in thA Rwc-.arui ~wiLuhilzg :~ I.rr l_~ ut the switching element, the magnetic field energy oan ba transform~d from thA fir:~l: rue~yy-atoraQe element, being pa'sed via the aotivs semiconductor e1~ment, to tn~e aP~onri ~~rrr,ryy-~l:orage element for electrical field energy.
p wr:~krm5~ u.~ ouch known electrical circuit nrranqemcnta for trans>aarmation of m~yrre~lc: field Rn~r~c3y lrrLo electrical field energy is, in particular, the octave semiconductor element : cm Llue one hand. the active acuclc:urxJuctor element is subject to high voltac~a fluctuations in the fnrwar~l ~lir:oction during each rrcdLgy transformation process, and thRRR Vul~ar~o 3U fluctuations area crt d~~rzoximately the name magnitude as the input voltage of the circuit arrarcyement. On the other hand, thrt dc:Live semiconductor clement should ha able to resist voltages of y Lu several timco the input. vnll_dyes of the circuit arrang~ment in thA rrvrsia~t direction. In the process, elm active semiconductor r.lducant is aubiect to a high alt~ernaring 1uW 1 between the forward St~tR end 1.11e rCVer'e State. z~he power capacity of the active semicon~9mnfinr tslement thus ~0:91I3S C~ lSb3H13~:1~i 90bZ~Z T~Z6 6bt SIV9W3IS 3i"i JJ lZ:IyOi"~ 04 65:90 IVfll-S1 ti00 ~~d m~~lq 1 lm~s_n1 o0~te1 t~l~ 1~~-~u ~10~Z0 00-Gl-unP p~nl~~~all GR y'l 1~ 3943 - 1a -cvn~ide~~dLly limiLe~ the gawer capacity of the entire circuit arrangQmont.
A3 a rule, conventional active aomiconductor a1 ~mr~nl.a are Ntudu~:ml from silicon 3i. These have the disadvantage that b0~31I9S tJ0 1S7~3H13~:IVC 90bZ~Z t~Z6 6bt SIV3~13IS 3~"i 99 lZ~IVOi"i OD
6S~90 lyftf-ST
EBO o~J ae'~!9 ! 3~~~S-of 801rtBl tBtE At+-m d w t0~Z0 00-9l-a~P P~~l~s~a PCT/DiE96/03G03 - 2 h1 gh reverse voltages can k~e ac;l~ldvd~i urrly Ly m~cana of correspo»di.ngiy thick somiconductor function layers i.n L1're au~tive semiconductor clement. liowove:r, thick semiconrlcac.:r, ~r ~nnnt,i on 1 Hytara lidvd Llle di3advantage that they have h:lgh dynamic switching lossms. The dynamic ~wi fie~:hi ng 1 ny~~:~ c~c:c:ur y~iwlc~minantly when the active semioonductor ~loma~nt changes Pram the rPVer.sP
aLdL~s to the forwnrd state and vice versa, in particular due to the 1'~rm~rri~n ancS dissipation of minority and majority cnrriorc. The dynamic switching losses result 1 n rc~rrR~pnr:cj i coyly lri~lr thermal leases, which can lead to destabilization of thQ active Semi nnnr9ur:l.c~ c' rlc~tu~srtL . Ftxtthermore, the maximum power loon Which can be dissipated from trie artivP
semiconductor element limits the 3witehing froquency of the switching element of the ri r~mi 1- ~rranyerudirL, acrd thus it3 power capacity, owing to the maximum temperarurR that. t.hr. ~c:Liv~ ~~nticonductor element can withstand. The first energy-storago element to the ~n msgrmt.lc: Lield energy and the aecand energy-storage oloment for the electrical fiel~t AnArgy c:nrr k~~
ties~.~mvl, in particular, to be inver3ely proportional to the clock frequency. Th~i r ply~iua~l size becomes correspondingly omallcr for higher ,switching frequPnr,i wR _ WO 97/01209 disa.loc~s a converter having least onA Rwi t.c:h 1 rcg cl~sm~nt and one diode, with th~
diode being compos~d of 5i~.
Th~c invention ia~ based on the ob~wct of specifying an e~ar,t-riral circuit d~rangemant for tranaiormation of magnetic field on~rgy into elertrir~.~1 field ~enerqy, wh i c:lc nllrrwa higher switching frequencies, and thus a smallQr physi~~1 aiz~, in a cost-Ai°'fant:1 vr_ urdmrmt .
Tho object is achieved by t:frr_ ~sldotrical ni rc:ulL arrangements specified in claims 1, 5, 7 and 9, ~tnd by the electrical c: i rc:m 1 1. diranqementa used dc:~~rrdinQ to claimo 15 to 20.
>A1~1DED SHBET
~~:31I9S ti0 1S~JSh119~:NC 90bz~Z Z~Z6 6b+ SI~3W3IS 3i"i 'JJ 1Z:IVOi"i OQ
ZO:Z~ lyflr-Sl fB0 olod ~olsl~ ~ ~ra~u$-of 90f1E1 IEIE Ef+-m d ~10~Z0 00-9l-unr psy oooa DR 97 F 343 r Pf'.T/nF98/03b03 - 2a -'1'he sreri a1 fiaatnr~! 1 n r_his ca3e its Llidl. ~lrrs semiconductor material of the active s~miconductor elemPnr f'1?!~i fl fl t'ilCt'~y ~djJ crL at 7.eaat 2 CV and a breakdown field strength of gt lAaRr. ~~10~5 V/c:m. Iii 3 thin cane. the active samiconduator element can be connectQd in parallel withn»r any furl.tm~ dciclili~rr~al meaaureo t7incc at lo3~t one of th~ active semiconductor elemenr.s haR ~ peall.lve Lmup~rature coefficient. The active semiconductor element ~.s, in particular, i n r.hP
1O Lurm ut a diode. prefarably n 3chottky diode.
Uno advantage, in particular of f»rthwr ciralyr~
variants of the clcatrical circuit arrangement according t o zhA i nvant i ~n i a l.lid L Llid 711~IDaD SHgET
bE:91I3S t!O 1Sb31i13~~NH 90bT~Z 'f~Z6 6b+ SIV3lJ3IS 3i"i 9~ 1Z:IVOn 00 Z0:Z0 lyflr-S1 100 o~d »» !9 ! ~~1~5_0l 90i1E1 t&lE Eir+-~~d ~10~Z0 00-Bl-un~ po~~oooa ... . _... ..
rR 9? p 3943 comiconductor material of th~a ~rti ve semic:ur»luuLvr e~.l.dm~uL ~:ontaina silicon ct3rbida, gallium nitride or diamond.
Onc advantage of a furthQr elerrric:~7 c:ltc:uiL
arranr~~manr rrc:c:u.ce3ing to the invention is that thra semiconductor material of the act iva rrr,rnlc:~melwtvr ~1 rmruL ~oiitaina Silicon carbide and, in particular, has 3n energy gap of abnttt 3 ~V nru~ a breakdown field strength of about 25*10~5 V/cm.
lU Gno advanr~gP crf a tuither electrical circuit arrangement according to the invention is that the samiConrinc:r.r~r~ crrdlerial of the active semiconductor elemcrit contains gallium nitride anti, lrr ~rarticular, has an euet~yy ~Ir~p of about 3.2 eV and 3 breakdown fiQld strength of about 3010~5 v/c:rn.
One advantage of a further olectricai c.ir~W fi arrangvmQnt 2oG~rriinc~ ~u the invention is that the semiconductor material of the active :aRmi c:c~riciueavr clement contains r9 i ~urmrtl and. in particular, hac an erierqy gap of about 5.5 eV anti a Lteakdown field strength c~f dLuut 104*10~5 V/cm.
The fact that the ~rnPrQy gt~p v1 the respective RPTTrlc:mreluctor material of the active semi .rnneiuc:~ut clement of the e7.Rrari c:dl circuit arrt~ngoments according to the invention is high i.n r:cuu~dti~run with silicon 2dvantay~uusly means that thra active semiconductor clement has high r-htarrrndl stability. The aCtiva :~r_mi~:vnductor elcrnont thus remains Cully functional and in a stable npr~raLinr~ State evEn at high npr.rw~ing temperatureo. Furthermore, rhP elec;l..civdl circuit arrangr~menr, s ac:c:u~JinQ to the invention can ~1 Hc~ Le operated at high operating vo1 tHyda Jue to the tact that 'thR rw~jrrrvtive semiconductor material of t.lm active semiconductor elQm~ent his' a breakdown field strenc~rh whietr is high in comparison with s~ 1 i c:cm. In consequence, the elR~i-.r~lc:~l circuit arrangemQnt aecorrii try lv the invention can also 2dvrrrWagevusly be operated as a pnwar c:ltvu3.t with high reverse voltar~~g.
L0:31I3S tb 1S~1-119~:1yti 90bZEL Z~T6 6b+ Sh13W3IS SI1 J9 1Z:IJ0~"i D4 00:L0 IVnf-SZ
800 ~~ed ~e»tg ~ ye~ng_ol OOirlhl 1618 8i~+-and ~10~a0 00-9l-onr p~~~~o~a _ q _ .i n p~rr.i nul ar, the tclylr Lteakdown field strength allows the semiconductor malarial xhi~knASR of the ac'a,ivr. :~Cmic:uwluc:;tur element to be redueed. In consequence, the dynamic anc~ rhrrnnrrl luaaea in the a~:tive semiconductor element are advantageously reduced. Un the one hand, chi ~ sc:t.iv~s aemicanductor elemsnt is 3ub~cct to reduced loads, and on the other hand the Rwi rnhi ny tLwdudric:y rrf the atditchinq element in the electrical circuit arrangement pan hp increased.
a.ct A ti i ytret switching frequency allows, in particular, the components, preferably the first Pnarc~y-:~t.utwy~ ~l~ntant fur magnetic field energy and the second energy-storage clement for alertxir~a1 fir.ld eudigy to be designed to be conaidcrably omullcr. This is associated, firstly, with an i r~c:rrrra~r irr l:he power capacity of the overall electrical circuit arrangrsment. Secondly, thR phyr~ic:dl rsixr. uL Llue electrical circuit arrangement is x~dueed.
A particularly adVantarlarn~R CdaLute of one rrnk~udlmrsuit c~ the invention 1~ that thA active ~U semiconductor elemRnr i:~ ~ dlude or. in particular, a Schottky diode. Sohottky diodes having a somiaonrimct.cm material wir.h charael.et'i~Lias cvrreaponding to those mentioned above have considerable ac9varrt_ac~ds. the schottky clicrde du~ra not need to be dcratod, or requires only minor derating, at lR~rit. wil.h regard to the t.rcamrioal characteristics. Tho revers~ vo~.tag~ of the Schottky diode is hirlh rnc~uylu for the electrical circuit arxanqemcnto according to the invr~nt.ium to be used Qven at high uNdiating voltaqea. On thQ other hand. the oomiaonductor-metal y.m~r.i~n in 4lcd 9chottky diode can hr c3d~igned to be thin doapite the capabili.r.y to with3tand high reverse voltarlPr~, su that the dynamic 1 nrsar.5 are low even when the switchinrl al rrn~mL is operated at high swit~hiny rtequencica. This allows the ?tS advali~ageoua charactcriotica of Schottky diudda to be used as act iVP! ~srmiuutductor clemerito in the elQCtrira 1 ~:ircuit arrangement according tn rhr: ilivention, even tit high ~prraLiry voltegea and at high ~wiTChing frequencioa.
80~91I9S tip 1S~113~:I~C 90bZ~L Z~Z6 6b+ ShIS~I3IS 3i"i D9 lZ:hlOi"t Oa 00:t0 hifif-SZ
600 ~~ed ~e»!9 1 ;~eng_ol OO~lB1 lBlB Bti+-~m d ~t0~a0 00-9l-un~ p~el~wa 9a -In tur~ti~=' eWuciim~suts of the invention, the circuit arrangvm~nts according to the i nvant.i ~n rrt~r.
u~~scl in a step-up controller.
60~31I3S tip 1S~19hi1S~:IVti 90bt~Z S~Z6 6bt SIy~IS ~"i J9 lz:NOi"i OD z0:Z0 IVflf-ST
0l0 amd W~19 ! ~~e~S_ol 80~1B1 lBle ei+-gird ~IO~ZO 00-9l-unp panlaaaa r ..
-otop-down controller, torw2rrcl rnnvPrl:Pr or jJUWCL'-Lnc:l.or c:c~mLic~ller circuit.
~'urthEr arlvsnragrc~u:~ ~sritbadimenta of the invention are speciti~d in the apprnpri at.r dC~rdtli.lEl'lt claj.mR .
The invention will bQ Qxplalnati i rt tuc~ctr eletail i n Llie fcrllowinc~ text with roference to exQmplary embodimwnts which are 17.1n:atr~t.rci .lu Che figurCa, which are described briofly below and in which, try way of example:
FIGURE 1 ohowa an electrical circuit ~rr~nyetu~srtl aur:rrZdinQ to the invention for transformation of magnat.i c: tldld energy into dlcctrical field energy, 7.5 FIGURE :~ shows an ill mt.r~t.lmr of energy gape with at leerat 2 cV for semiconductor materi a1 s cat the ~c:Livr~ semiconductor elcmont, with, by way of example, a function r.c~ a umtallic S~t~c~l.Lky ~untent.
FICURE 3 shows an illust.ratinrt ur breakdown field strengths of apt toast 510~5 V/cm fnr samirondunrnr materlala in the activo semiconductor olement, FIGUR» 4 shcwa a Rt.~p-ry u~ntrollEr circuit having an 2~ clcctrica.L circuit arrangRmrrr~ according to rnrr Lmvr<srWiun, FIGUR>J 5 ohowa a stop-down conrrnlldt circuit having au electrical cix'cuit arrangQment arr:c~ri.iitlg to the inv~entinn, 1~TGURE 6 Show' a forward-convQrter ni rauit ttavin~t an Qlectric:~1 c:l~cuit arrangement according r.n the invention, and flVUFcE 7 R?~c~w~ ~t powCr faotor controller caiouit having an sler~rric:~l circuit axrangamEnt acc;c~tding to the invention.
By way of Qxampl~s. Figure 1 ahowc an electrical circuit r~r~r~ngEment G according to the lm~ention for tranoformation tN of rndyicetic f field onergy M into OZ:31I9S tip 1S~19hI1S~~lyti 90bZ~L z~I6 6b+ SI~19W3IS 3i"i :9"J lZ:hICh"i l7O
Z0~Z0 I~flr-St ll0 used ~e'sl~ ~ y e~us-of 90Y1E1 LtIE EY+-~o~d ~IO:ZO 00-9l-un~ p~npa~a GR H'/ 1~ 3943 electrical field enere~y E. The elQatrieai circuit arrangement G is a~.y~1 i ~~i, TZ:S1ISS ti'J 1S2~-113~~hIH 90bZ~Z t~Z6 6bt ShIS4JSIS 3i"i JJ 1Z:I~Oi"i 04 TO:L0 IVflf-SZ
Zt0 osod ro>sal8 t ~~aos-of 80irtE1 tEt6 S>rt-oo~d oalO~tO 00-9l-onr ponloaoa rR 97 p ~94~
in particular, with the input vr~ltagR IIF and has ti 1.
lR~al. urrd rirst energy-etoraqe elemCnt L for magnotic fiold enorgy M and a a~cnnd AnRrgy-aLutarge element C
for electriCt~l fiold energy J;. t'urthPrmora, tE~r.
e~.ectric.al ni rc:u i 1. d~~angement G has on active semiconductor clement D and an raloetrirat ~wi tc:Trlry AlRmpr~l. S. The electrical switching clement s may naaumo at hart one first anti ~nA rsruutici switching ~Cate 31 or 32, reapectivCly. The first energy-storage elwmont L, the second Rnrnyy-sLuraqe element C, the ,active semiconductor elcmont D and the clectrj.ral switchi ng ~1 rrririW S art connected to one another in such ti way that in th~ first switching sfi~l.r. S1 uL the Rwitching ~leruerW 9, the magnetic field onorgy M can be stored in the first energy-st~rnyr~ dlement L, and in t.hr. sduund switching state 82 of the switching Qlsment S, the magnetic fiRld rnrryy M can be transformed from the first erierqy--OtOrago element t0 thQ .BeCOnt.1 Rnr.ryy-storagQ Qlement r. fc~r.~ dld~:trical field enorgy 1;. The energy flow which rosults from r.ha t.rwr~tvrmation of magnetic fi r.1 c1 dciergy M into electrical field onergy E
is passed vii the active ~amironductvt~ dlement D. In rhiw c:dse, the active aemiaonductor olsment D has. irr particular, a forwa.r, d ci 9 rdc:LlGn and a rcvorae direction, thuo allowing transform~ati~n ur cnagnetic field energy tH i rmu rslectrical field onorgy >L in thQ
forward direction, while the Qlectr.ir~.a1 Lidld energy >r stored i n t.lm second energy-otorage element r_. rannc~l.
react to the first energy-stnr~gr_ dlrrm~nt h owing to thA rr.vdise direction.
In the Qxamp7.a i n Fl~ura 1. when the switching alrrnHiiL 3 is in the first awltching star.a S1, a current I1 fed from rhr liiput voltage UE flows through The Lirst energy-otorage atoment L, ~r~ ~ iesult of whivh magnQtir field ene~c~y M is built up in this elemwnt..
The input voltag~ Ul=: may hP Pi Llirrr an AC voltage or a UC voltadP" tnllt~tn the switching element S rhangrb ~u the 3CCOnd switching ~t.a~d 32. the curr4nt I1 ins 1 nt taw u~rted.
~t :31I3S CO lSaSi113~:1~ti 90bT~Z ~~t6 6bt Sh13W3IS 3i"i JJ lz:NDl"i 0(1 Z0:Z21 I~'Ir-Sl el0 ,~d ae~l8 t ~~o~S-~1 90~1E1 late 0~+-m d ~QIp~ZO 00-9t-unr p~~l.a~a f;R 97 P 3993 _ ~a _ whioh results in a currQnt 12, which j~ =pd at least L~um thG first energy-atoraqe elcmcnt L and tlowc via th4 active semicondu~ctc~r e1 amAnt. D, .Lm its forward direction. The current I~ tlowc into the second enerc~y-stor2r~P a1 amAnt. C: w?ieL~ i~ ~G3ult3 in ~'L:31I9S ti0 lSaSfil3~:l~i 9~bZ~Z T~Z6 6bt SIy3W9IS 3i"i JJ lZ~IVDI"i Od 't0:Z0 hlflf-SZ
fl0 ~d m~sl~ t ~aors-of 90flEl lElB Eft-m d ~IO~ZO 00-91-un~ pay toga electrical field enPrc~y F h~ing built up, .i.it NdzLi4ular in the form of the voltage UC.
ps h~~a ~1 rr:ac3y hddm aliown by way of example in Figure l, the first enorgy-storage R1 Rme~.r~r L lm um rmLucli~atllt of the invention is preferably an induativo element, for example a coil. Iri 2 frrri-hwr rmlmdlnmtil, of the invention, thQ ocaond onorgy-storage element ~: is pr~ferably ~ rap~ni i-. i vr. ~lmu~nt, for example a oapacitor. In a further embodiment of thR invPnrlnn, ~.n th~~ r-le~c:t_ti~:al switching element B is prcforably a acmiconduator switching element, for Ax~mFrlr ~ .Cldld-~tfect transistor. In a further embodiment of the inv~ntion, at least onr~ fmrtair_r, iri particular identical, active semiconductor element D' is connected in paral 1 a1 wi i.fi t.lm dc:t_ive aemiconductox element D.
Farallcl aonnoction is advantageously possible wirhrnH:
any Lutt.hez additional measures, oinco the aativra s~omiconduator .lenient T, or D' , whi ~f~ is Vd~c~ribad fu~wlm~ in the followirzq text, hao a positive ;tU temperature ca~ffi~iant,. Tn paL~Liaular, this element i3 in the form of a diode, pretexably a Schottky dj aria.
'fhe i nvRrtt 1 nn will be deSt;t lLed in more detail in the following text with reference to rhea c:c~nyur~enta mentinnad ray way ~t example here.
As is show7"~ by w2~y nf. axHrnpl~r in Fiqurea 2 and J, t_lirs aemicvnduator material of the act ivP
semiconductor element D 2ornr~ii rty Lu the invention hat3 an energy gap VB of at least :2 ev, in ela~rrnn v~lt.a, and a bre2kct~wn fl~slcl at~:ength CK of at laast JO 5''10~5 V/cm, in volts par r..AntimPtre. Tlid "10~5"
nataric~n lir this cane correopondo to the notation "lE+5".
In figure 2, by way of ~xample, the Pnr.tyy gap VB of thQ semir~ncW o:t_r.~t materiel of the active 33 ;~dmiconductor element D is shown in gymtrc~liu form.
according tn I.hr_ invention. to be at least 2 eV_ The energy gap V8 is in this case 1-hr. e~mrgy difference bP~WRPr1 Llm energy level of the valwncy band ~:v ant! The bT:31I3S t!O 1S~13H13~:hIG 90bZ~Z Z~~6 6b+ SIV9WSIS 3i"i °J9 1Z:1~0~"i Oa c0:z~ nnr-sz 9l0 esed ~essit! ! ~~eWS-of 99Y1B1 IEIE 6Yt-~~d eeIO:ZO 00-9l-un~ penle~ea rR 97 P 3943 _ 7~ _ onorgy level of the conduCtinn h~n~1 >rC. The euet~y ldv~sl of the E'ermi level i~ ~l~o ohown, for assistance.
The illustration is Fir~urR ~ i :~, try ST:31I3S ti'J 1S~13H13~:IVH 90bT~L Z~Z6 6b+ SIV~3IS 3~"~ JJ 1Z:IV0~"i 00 c~:Z0 Nflf-SZ
910 used ~eDW 9 ! m e~S-of 9091E1 IEIB 89+-road me10:Z0 00-91-unf P~~mu~b C:k 97 ~ 3943 _ g way of example, rclatod to 3 ~Bemiconductor junction rn a m4taliia snhnttky c:wW dc:L in the direction of tho ordinate . In Figure '.~' , by way o= caxample, r. hA hrrr~ kt3uwri tl~ld strength EK of the oemiconductor matwrial of the 3etivc semiconductor elemRnt f) 1~ shown in symbolic form, according to the invontion, to be at least 5*10~5 V/em. Ry way crt e~xdritple. the abscissa of the illustration in Figure ;i shows valu~as of dnri nc~ i rr 1/cm~.'~ crt elm semiconductor material of the active semiconductor wloment u. Th~ numerirwl deLdils fcr this dnFri ny rdptesent only levels chosen by way of ~xample.
In various Pmt7c~ci i mews of the electrical circuit arrangement C according to the invention, thr.
somieondurtnr material vI ll'm active semiconductor element D contains, in particular, sill c-.nn c:Ht~t~icA~ 31C, gallium ni Lc~ld~s Ga~N v~- diamond C diamond, that is to nay carbon with a r91 amnnci caystalline network ~rl~.Lwc:~utt, with the semiconductor matorial having ~n onorgy gap vJi of at least ~ rv died a breakdown field r~trangth CK of at least 5*lU~b v/cm.
In ,furthAr cirslyic variants of the invontion, the semiconductor material of thR antive semic~rlciu~tor elemenr n c:c~cWaims, i.n particular, silicon carbide Sic, gallium nitride GaN or diamond r di arnc~:rd.
If the 'emiconduotar matorial of the ant.lve semiconductor elemPnr. ~ lc~ vne embodiment of the el~svtriaal circuit arrangemQnt V aecarnii ng ~u the invantinn nr in eerie design variant of thra invanti~n contains oilicon carbide Si.C:, then, i n Narticuler, thin has ~n diiwigy gap VD of about 3 oV and a hra~kdown field rstrength ~;lc of abour. 75"10~~ V/cm, as i3 shown by way of r_xdut~-rle in 1:'igures 2 and 3.
It the semi c:cm~iu4tor material of thw active arsmivonductor elomont D in on! Amhndim~snt of the electrical c~.ir.cuit a~tangement G according to the invention or in one dQSign varLarrl of the invention contains c~~r1 lluirc nitride GaN, then, in particul err, ~lris has err enorgy gap vt~ of dh~out 3.2 eV and a breakdown 9'i:31I3S CO lSrJ3H193:NC 90bZ~Z 'f~Z6 6bt SIV3W3IS 3~"~ "J"J 1Z:1~7 00 c0:1.0 Nflf-ST
llp fed ~e» IS t ~~e~S-of 9pYlE1 l6lE EY+-eo~d melp:Ep pp-9l-un~ penleoea ..
field otrcngth EK o~ about 3U"~lU~5 V/cm, aR 1~ shown by way ~f ax~tn~ld in Figturea 2 and 3.
LZ:31I3S tfJ 1S~-113~:hIG 90bT~L Z~Z6 6b+ SN3W3IS Si"i 99 1Z:IVOi"i 17a ~21:L0 I~II~f-SZ
t10 oDed m~l~ f ~~e~3-of 90~1e~ 1610 eft-gad ~10~Z0 00-9l-unp po~loooa . .~. , --., .
- a~ -If thQ a~miconductor m2stPrial of the t~c:~lv~s r~rmic:umclu~tcrr element D in one ombodim~nt of the electrical circuit arrangPmant: G dur:ordi.nQ to the invention or in ono design variant of the 1 nvRnt: ! cm b contains dismnnci C: cildmurml. then. in pnrtieular, thin has an energy gap VB of about 5.5 av and a hrr.~kciuwss fir.l.d 'Lteng'th EK of about 100*10~5 V/cm, as is likewiaQ shown by way or eXamFslR im Flyutea 2 and 3.
Dy way of example, Figures o tn ~ shnw J. t) advarstageous ri rrni t. dttr~rir~cmenta in which the invention is used.
Fl,yurc~ 4 shows, by way of example, a stop-up controller circuit H having an Rt~nt.t~lual oirouit arrangecuess~ f3 accoa:dinq to the invention, to which, in 15 particular, an input v~trag~ tlE1 is supplied and which lsr~a an output voltaqc U111. Th4 stop-up cantrnlt ar circuit H has, fc~r~ exdm~la, a coil L11, a field-effect tranai9tar S11, a semiconductor di~cia nl.l, in particular a Sc:hc~L~kyliode. arid a capacitor C11. Tha 20 ooil L11 iri connected in series wi t.ts ~lsc input voltage tTFl. Tlue~ field-effect tranoiotor S11 and she capacitn.r.
C11 arQ arrangRd cinwnstream tt~uu~ the coil L11, in paiallel with the input voltag~ U~:l . The sAmi c-.ariduc:Lui diode U11 is arranr~rci iss Llw forward direction betweQn 25 the field-effect txansoistor s11 and t.tl~ c:dpa~citor C11, ind 1 n ar~~t~s~ with the coil L11. According to the invention, thw semiconductor dinrie~ D11 la composed of a :~e_mic':unductor material t~ccording to Lhe invent i.nn . Wtmu the bald-~tfQCt tranai at.c~r S11 is switched on and oft, 30 magnetic field energy is transformed rr~m the cell L11 into thQ cara~ir.nr C11 rsa electrical field energy.
Ciqurc 5 ehow~c, by way of Pxampl~s. a step-down rr~nrrnl ldt oircuit T having an oloctrical ri rc:w i ~
arrangement G according r.n thr invention, in which, in 't!5 partic;ulai. an input voltage t)E:~ is supplied anti wlsic.,h has an output vnt rac3r. t)A2 . The step-down controller c:itr:uit T has. for example, a coil L21, a Ii~sld-effect transistor S?.t, H ~maiconductor 8t~91I3S f~a lSa9h113~:IdH 90bT~L z~T6 6b+ SI~3W3IS 3i"i 9J 1Z~IyOi"i (7O
~0~Z0 Nflr-S1 Elp ~~d ~es'!S t ~~e~5-of 9pYltl 161E EYt-~~d ~elp:i0 pp-4l-un~ p~nl~»b diode D21, in particular a Schottky diode, and ~
L:dj.7dG:l~uL C21. The field-effect tranai3tor S21 i~
connected in series with the inner v~1 t:egtr I7E2 . Tlr~s semiconductor diodes D21 and the capacitor C21 arQ
arranr~Pd i n the rrvr.,r.~a~ di~d~:Liori downstream from the field-effect translator Sll, in parallel with the input VUlLdy~ UE2. Tho coil L21 is arranged between tha semiconductor diode U21 and the oarari,r, ~r C:~1 , ~nc3 lu series with the field-cffcat translator S21. According to the inventlnn, 1-hR :,rmlc:umclu~Lor diode D21 is composed of a 3emivonductor material according to the invanfii~n. Wlm~ ~i~rs field-effcct transistor X11 is owitahed on and ott, magnetic field energy i~
transfarmad rruui l.he flail L21 into the capacitor C21 as l~ electrical field energy.
figure 6 shows, by way of example, a tarward-eonvertAr c:i rc:~~t I. Dtn1 lidvirig an electrical circuit arrangement C according to the invention, to which, in particul ar, xn icrpuL vull.age UE3 is supplied and which has an output voltage 17A3. In this c:axr., r~ ~tlmdiy c:irc:uiL DWl and/or n~ secondary circuit DW:? of the forward-converter of rr»i r. fivll have/has l.lie alectiical circuit arrangement C according to the invention. The primary circuit >7m1 and t.?~r. 5dc;uldary circuit DW2 are c5 preferably docoupled from one another by mR~nx m L a transformwr T3. Tkm primary circuit DW1 hac, for example, a first capacitor C31, a lEirRt r:c~ll L31. a Llt~L aemicvnductor diode D31, in particular a ~chottky diode, and a first fielri-Pff~c:t. ~Lamistor 331. As a rule. the fir3t soil L31 is a winding elemAnr ~t the primary coil wi nc91 ry, in particular a ao-called demagnetizntion winding, of the transformer T?l. Tlres secnn~iary c:lLUUit DW2 has, for example, a second semiconductor diode U32, in part.i c:uldt ex 9chottky ~5 diode, a Ll~ird Semiconductor diode D33, a second coil L3~ and a second sansei tar C:32 . When the field -effect t.L'dtl'Sl9tOr S31 is switched on and off, magnotia fi p1 c3 energy is transfnrmrd rtwn the first coil L31 into the fi~:at capacitor C31 as electrical field PnPrc~y.
6Z:31I9S C~ lSa~i.LS~:IVC 90bT~L t~t6 6b+ SI~3WSIS 3i~i '99 1Z:IVCh"i Oa ~0:Z0 Nflr-S1 OZl1 mid ~e~l~ ! iaem$_ol 90Ylel tats EYt-~~d mEIO~ZO 00-9l-onf Pm~lm~ma rR 97 P 3943 - 1 'I -The capacitor C31, tho first rvi 1 T~31 which is c:r~rurdc:t_wcl in the reverse direction and in aeries with the first semiconductor dio~la O~1 , drml Llle first field effect tranaiotor Sal which is connected in series wi th t.hr_ ptiuraiy of the tran3former T3 arc arranged in tho primary circuit uWl, in raraltr~l wil-,h the lripuL voltage UE3. When the field-effect transistor S31 is awitchod on and oft, mac~nPr. i r-.. f i rlc3 dm~~y is transformed from the firot coil L31 into the first lU capacitor C31 as elRrr.ri~~rl flrld eiZergy.
The third semiconductor diod~ u33 is connected in rhA :sr:c:cmcidiy ~:ircu~.t DW2, in eerico with the secondary of the transformer T3 and in tt~r. Lutwxr~l directive. T!m second semiconductor diodo D32 and th~
second capacitor C32 are arrsnyr_d, in the reverse dizectivn, downstream from tho third semiconductor di.oda~ L~33, i n par~lldl with the secondary of the transformer T3. The second coil L32 is arrangari t;~r~l.wddm thQ seronci ~tarnlr.:umiuvtur diode D32 and tho second eApacitor Cj:t and in serj.a~ w i. t.ti the third sE?rmi c:nrrduc:Lur diode D33. When the bald-effQCt transistor S~1 is awir. r..hpci ~n and vrt, rnagnetic field tstWlS~y is tran3formed from the second coil L32 inr.n fi,hr:
second capacitor f.::~9 a:~ c~lCC:Ltival field energy.
Tho first sQmiconductor diodes 1731 d1~1C1IVl the sQCOnd ~Pmi r:urrciuc:tvr diode D32, but preferably both, are, according to the invent i, Win, c:mn~rvsed of a sami~:rmdu~Lvr material according to the invQntion- Thr.
third semiconductor diode ~~:1 mdy likewise be eompoaod ur a semiconductor matorial according to rhR inventivr~.
le'igure 7 shc~w:~, Ly way of examples, a power Lxcaor circuit fFC of an elraetrlcal cirr» i t. d~iangement accord~.nrl t.c~ ~tr~s invention, to which, in particular, an input voltage U1;4 is suprl i rd acid which hao an ;i5 ourn»r. voltage UA4 . The power-fsetor circuit P~'r i s also roferrcd to, in parric:ulat, as a so c~;llod "powQr far..rnr s;urrtrvller" circuit. In this casA, ~n d~cCcrnal c3aeade circuit Pfr ~nci/uL an internal caaoadv circuit OZ:31I3S CO 1S~13N13~:t~i 90bZ~Z Z~Z6 6bt SIV3W3IS 3i"i J9 lZ:IyQ"i OQ bO:L~
lyfir-S1 ~Y-_ Ito used ~esa~g ! m e~g_ol 9091E1 1618 at+_~ro~d melo:ZO 00-91-un~ pw va~a GR 97 P 'i943 - lla -fI of the pow~r-factox circuit PFC has thA A1 art-.ri aal ri r~mi t-.
ZC:31ISS ti'J 1S~I1S~:I~i 90bT~L t~T6 6b+ SN3W3IS 9i"i JJ 1Z:IVOi"i Od b0:L0 IVfif-ST
ZZO ~~J »» 19 ! ~to~g_ol 9Ot'1B1 1E18 03r+-m d w IO~tO OO-9t-un~ p~~l~ova arrangemQnt G accordinr~ to r, h~ i nvPnr.1 on. The exteftictl cascade circuit rA has, for examplo, a first coil L41, a first fielel-effar~t fi.ranyi al_Ut' S41 and a first ocmiconductor di.od~ U41, in particular 2 Sr~hnrr.ky !5 di c~cW . Tltw internal cascade circuit fI hao, for example, a st~rcond coil L42, a seGnnr'1 aRmi c:nrvcW c:t_c.~t diode D42, in particular to Schottky diode, and a third semicondttCtor d~.ndR n4~. TT1H E:xl_dtttfll Ga3CadC circuit fA and tho internal aascado circuit PI have a cnmmnn rapac:i t.ctr C41. W1'iert the first and second field-effect tranaiotors S91 and 59:G, respectively, are swi tc:h~ci c~ri and off. magnetic field energy from the first soil L41 and magnetic field enerr~y from rhe~. Hrc:c~tttl u~il L92 era tralzsformed into the capacitor C41 ao electrical field 13 ~on~rgy.
In the oxtornal cascade circuit F~~, the Lixsr.
c-r~t 1. L41 is ~:unnectad in aeries with the input voltage UE4. Thw first field-affect transi star S41 dw1 the C.djJdl:1'tUR C41 are arranged down3trctam from the first au coil L41, in pare 1 1 a1 wi t:h t.lm iryut voltage UC4 . The first semiconductor diode D41 is arrang~d, in the foxwarA di rection. bel.we~stt the first field effect tran3iator S91 and the capacitor C41, anti in seti~~
with rhr. flt~~t_ coil L41. When tho firot fiold-effect 25 transistor S41 i.s switched nn and ctLL, mat~natic field dr~digy is transformed from the first coil L41 into the capacitor c:41 as electriaa.l fi A1 c9 ermt~y.
In the intornal casead4 Circuit PI, the !~~~c:arid coil L42 i.s c:nnnrc:l_eci t_~ thG common node bctwoon the 30 first coil L41, th~ first field-AffP~r transist~t~ S41 ~tnd t_lm first semiconductor diodo D41. Tha second fiold-ettQCt transistor s42, which is connected in aerios with the third oamiconduator diodo D43 (which is connected in the f~rwarc9 cilt~~tivnl , and the capacitor 3~ C47, arc arranged downatroam from the second aoll T,4~, in parall a1 w i t.Tr Llt~ first field-effect transistor 541.
The second semiconductor diode G42 is arrangrd lm the forward ditdraion between the second field-affoct ~Z:91I9S tie lSa3H19~:hlti 90bT~Z '~~Z6 6bt SIV3W3IS Si"i °YJ 1Z:I~lOn Of3 ~:LO IVflf-SZ
BZG esed ~e~p ! ~~e~S-of B~YlE1 IEIE EYt-~o~d eel0:Z0 00-9l-un~ penloeea ~R 97 P 3943 - 12a -trai'sictor S42 and tho capacitor C41, and in series with the second coil L42.
~~:S1I9S C~ 1S~1J.3~:hIG 90bT~Z L~t6 6b+ SI~3WSIS 3i"i J9 lZ:IyOi"i 00 S0:Z0 hair-SZ
fE0 ~»d m~19 ! im~S-of 80~t61 t6t6 Ef+-gad ~l0=Z0 00-9l-unr p~nl~aoa GR ~'! P .i ~ 4 ,i Tilts rlt 'S (,. ~dmluuJl3uc:l.ut tiiu~,id D$1 dll'ld/vx the sQCOnd sQmiconductor diodes u4~ arQ/is, according to thQ
invention, composed of a semiconductor matorial Flt)C:Ur'C.~illt~ ~.U Ltll~ ilJVt'_111.1C)11. TIC LtJit'C.~
'.it'JlLI.tC:Vl1(~UC.:LUt diode D43 may likewise be composed o~ a semiconductor 111dLCt1d1 dtrC:Utllllll~ LU (_tltl 1JJVL-'IlL1U11.
b~~31I3S ties 1S~13H13~:I~ti 90bt~Z Z~Z6 6bt SI~3W3IS 31"1 J°~ 1Z:N01"1 Od S0:L0 I~tlf-S'
ma7netlr field ~ner~y eau be Stored in the first onQrgy-storage element, and in thA Rwc-.arui ~wiLuhilzg :~ I.rr l_~ ut the switching element, the magnetic field energy oan ba transform~d from thA fir:~l: rue~yy-atoraQe element, being pa'sed via the aotivs semiconductor e1~ment, to tn~e aP~onri ~~rrr,ryy-~l:orage element for electrical field energy.
p wr:~krm5~ u.~ ouch known electrical circuit nrranqemcnta for trans>aarmation of m~yrre~lc: field Rn~r~c3y lrrLo electrical field energy is, in particular, the octave semiconductor element : cm Llue one hand. the active acuclc:urxJuctor element is subject to high voltac~a fluctuations in the fnrwar~l ~lir:oction during each rrcdLgy transformation process, and thRRR Vul~ar~o 3U fluctuations area crt d~~rzoximately the name magnitude as the input voltage of the circuit arrarcyement. On the other hand, thrt dc:Live semiconductor clement should ha able to resist voltages of y Lu several timco the input. vnll_dyes of the circuit arrang~ment in thA rrvrsia~t direction. In the process, elm active semiconductor r.lducant is aubiect to a high alt~ernaring 1uW 1 between the forward St~tR end 1.11e rCVer'e State. z~he power capacity of the active semicon~9mnfinr tslement thus ~0:91I3S C~ lSb3H13~:1~i 90bZ~Z T~Z6 6bt SIV9W3IS 3i"i JJ lZ:IyOi"~ 04 65:90 IVfll-S1 ti00 ~~d m~~lq 1 lm~s_n1 o0~te1 t~l~ 1~~-~u ~10~Z0 00-Gl-unP p~nl~~~all GR y'l 1~ 3943 - 1a -cvn~ide~~dLly limiLe~ the gawer capacity of the entire circuit arrangQmont.
A3 a rule, conventional active aomiconductor a1 ~mr~nl.a are Ntudu~:ml from silicon 3i. These have the disadvantage that b0~31I9S tJ0 1S7~3H13~:IVC 90bZ~Z t~Z6 6bt SIV3~13IS 3~"i 99 lZ~IVOi"i OD
6S~90 lyftf-ST
EBO o~J ae'~!9 ! 3~~~S-of 801rtBl tBtE At+-m d w t0~Z0 00-9l-a~P P~~l~s~a PCT/DiE96/03G03 - 2 h1 gh reverse voltages can k~e ac;l~ldvd~i urrly Ly m~cana of correspo»di.ngiy thick somiconductor function layers i.n L1're au~tive semiconductor clement. liowove:r, thick semiconrlcac.:r, ~r ~nnnt,i on 1 Hytara lidvd Llle di3advantage that they have h:lgh dynamic switching lossms. The dynamic ~wi fie~:hi ng 1 ny~~:~ c~c:c:ur y~iwlc~minantly when the active semioonductor ~loma~nt changes Pram the rPVer.sP
aLdL~s to the forwnrd state and vice versa, in particular due to the 1'~rm~rri~n ancS dissipation of minority and majority cnrriorc. The dynamic switching losses result 1 n rc~rrR~pnr:cj i coyly lri~lr thermal leases, which can lead to destabilization of thQ active Semi nnnr9ur:l.c~ c' rlc~tu~srtL . Ftxtthermore, the maximum power loon Which can be dissipated from trie artivP
semiconductor element limits the 3witehing froquency of the switching element of the ri r~mi 1- ~rranyerudirL, acrd thus it3 power capacity, owing to the maximum temperarurR that. t.hr. ~c:Liv~ ~~nticonductor element can withstand. The first energy-storago element to the ~n msgrmt.lc: Lield energy and the aecand energy-storage oloment for the electrical fiel~t AnArgy c:nrr k~~
ties~.~mvl, in particular, to be inver3ely proportional to the clock frequency. Th~i r ply~iua~l size becomes correspondingly omallcr for higher ,switching frequPnr,i wR _ WO 97/01209 disa.loc~s a converter having least onA Rwi t.c:h 1 rcg cl~sm~nt and one diode, with th~
diode being compos~d of 5i~.
Th~c invention ia~ based on the ob~wct of specifying an e~ar,t-riral circuit d~rangemant for tranaiormation of magnetic field on~rgy into elertrir~.~1 field ~enerqy, wh i c:lc nllrrwa higher switching frequencies, and thus a smallQr physi~~1 aiz~, in a cost-Ai°'fant:1 vr_ urdmrmt .
Tho object is achieved by t:frr_ ~sldotrical ni rc:ulL arrangements specified in claims 1, 5, 7 and 9, ~tnd by the electrical c: i rc:m 1 1. diranqementa used dc:~~rrdinQ to claimo 15 to 20.
>A1~1DED SHBET
~~:31I9S ti0 1S~JSh119~:NC 90bz~Z Z~Z6 6b+ SI~3W3IS 3i"i 'JJ 1Z:IVOi"i OQ
ZO:Z~ lyflr-Sl fB0 olod ~olsl~ ~ ~ra~u$-of 90f1E1 IEIE Ef+-m d ~10~Z0 00-9l-unr psy oooa DR 97 F 343 r Pf'.T/nF98/03b03 - 2a -'1'he sreri a1 fiaatnr~! 1 n r_his ca3e its Llidl. ~lrrs semiconductor material of the active s~miconductor elemPnr f'1?!~i fl fl t'ilCt'~y ~djJ crL at 7.eaat 2 CV and a breakdown field strength of gt lAaRr. ~~10~5 V/c:m. Iii 3 thin cane. the active samiconduator element can be connectQd in parallel withn»r any furl.tm~ dciclili~rr~al meaaureo t7incc at lo3~t one of th~ active semiconductor elemenr.s haR ~ peall.lve Lmup~rature coefficient. The active semiconductor element ~.s, in particular, i n r.hP
1O Lurm ut a diode. prefarably n 3chottky diode.
Uno advantage, in particular of f»rthwr ciralyr~
variants of the clcatrical circuit arrangement according t o zhA i nvant i ~n i a l.lid L Llid 711~IDaD SHgET
bE:91I3S t!O 1Sb31i13~~NH 90bT~Z 'f~Z6 6b+ SIV3lJ3IS 3i"i 9~ 1Z:IVOn 00 Z0:Z0 lyflr-S1 100 o~d »» !9 ! ~~1~5_0l 90i1E1 t&lE Eir+-~~d ~10~Z0 00-Bl-un~ po~~oooa ... . _... ..
rR 9? p 3943 comiconductor material of th~a ~rti ve semic:ur»luuLvr e~.l.dm~uL ~:ontaina silicon ct3rbida, gallium nitride or diamond.
Onc advantage of a furthQr elerrric:~7 c:ltc:uiL
arranr~~manr rrc:c:u.ce3ing to the invention is that thra semiconductor material of the act iva rrr,rnlc:~melwtvr ~1 rmruL ~oiitaina Silicon carbide and, in particular, has 3n energy gap of abnttt 3 ~V nru~ a breakdown field strength of about 25*10~5 V/cm.
lU Gno advanr~gP crf a tuither electrical circuit arrangement according to the invention is that the samiConrinc:r.r~r~ crrdlerial of the active semiconductor elemcrit contains gallium nitride anti, lrr ~rarticular, has an euet~yy ~Ir~p of about 3.2 eV and 3 breakdown fiQld strength of about 3010~5 v/c:rn.
One advantage of a further olectricai c.ir~W fi arrangvmQnt 2oG~rriinc~ ~u the invention is that the semiconductor material of the active :aRmi c:c~riciueavr clement contains r9 i ~urmrtl and. in particular, hac an erierqy gap of about 5.5 eV anti a Lteakdown field strength c~f dLuut 104*10~5 V/cm.
The fact that the ~rnPrQy gt~p v1 the respective RPTTrlc:mreluctor material of the active semi .rnneiuc:~ut clement of the e7.Rrari c:dl circuit arrt~ngoments according to the invention is high i.n r:cuu~dti~run with silicon 2dvantay~uusly means that thra active semiconductor clement has high r-htarrrndl stability. The aCtiva :~r_mi~:vnductor elcrnont thus remains Cully functional and in a stable npr~raLinr~ State evEn at high npr.rw~ing temperatureo. Furthermore, rhP elec;l..civdl circuit arrangr~menr, s ac:c:u~JinQ to the invention can ~1 Hc~ Le operated at high operating vo1 tHyda Jue to the tact that 'thR rw~jrrrvtive semiconductor material of t.lm active semiconductor elQm~ent his' a breakdown field strenc~rh whietr is high in comparison with s~ 1 i c:cm. In consequence, the elR~i-.r~lc:~l circuit arrangemQnt aecorrii try lv the invention can also 2dvrrrWagevusly be operated as a pnwar c:ltvu3.t with high reverse voltar~~g.
L0:31I3S tb 1S~1-119~:1yti 90bZEL Z~T6 6b+ Sh13W3IS SI1 J9 1Z:IJ0~"i D4 00:L0 IVnf-SZ
800 ~~ed ~e»tg ~ ye~ng_ol OOirlhl 1618 8i~+-and ~10~a0 00-9l-onr p~~~~o~a _ q _ .i n p~rr.i nul ar, the tclylr Lteakdown field strength allows the semiconductor malarial xhi~knASR of the ac'a,ivr. :~Cmic:uwluc:;tur element to be redueed. In consequence, the dynamic anc~ rhrrnnrrl luaaea in the a~:tive semiconductor element are advantageously reduced. Un the one hand, chi ~ sc:t.iv~s aemicanductor elemsnt is 3ub~cct to reduced loads, and on the other hand the Rwi rnhi ny tLwdudric:y rrf the atditchinq element in the electrical circuit arrangement pan hp increased.
a.ct A ti i ytret switching frequency allows, in particular, the components, preferably the first Pnarc~y-:~t.utwy~ ~l~ntant fur magnetic field energy and the second energy-storage clement for alertxir~a1 fir.ld eudigy to be designed to be conaidcrably omullcr. This is associated, firstly, with an i r~c:rrrra~r irr l:he power capacity of the overall electrical circuit arrangrsment. Secondly, thR phyr~ic:dl rsixr. uL Llue electrical circuit arrangement is x~dueed.
A particularly adVantarlarn~R CdaLute of one rrnk~udlmrsuit c~ the invention 1~ that thA active ~U semiconductor elemRnr i:~ ~ dlude or. in particular, a Schottky diode. Sohottky diodes having a somiaonrimct.cm material wir.h charael.et'i~Lias cvrreaponding to those mentioned above have considerable ac9varrt_ac~ds. the schottky clicrde du~ra not need to be dcratod, or requires only minor derating, at lR~rit. wil.h regard to the t.rcamrioal characteristics. Tho revers~ vo~.tag~ of the Schottky diode is hirlh rnc~uylu for the electrical circuit arxanqemcnto according to the invr~nt.ium to be used Qven at high uNdiating voltaqea. On thQ other hand. the oomiaonductor-metal y.m~r.i~n in 4lcd 9chottky diode can hr c3d~igned to be thin doapite the capabili.r.y to with3tand high reverse voltarlPr~, su that the dynamic 1 nrsar.5 are low even when the switchinrl al rrn~mL is operated at high swit~hiny rtequencica. This allows the ?tS advali~ageoua charactcriotica of Schottky diudda to be used as act iVP! ~srmiuutductor clemerito in the elQCtrira 1 ~:ircuit arrangement according tn rhr: ilivention, even tit high ~prraLiry voltegea and at high ~wiTChing frequencioa.
80~91I9S tip 1S~113~:I~C 90bZ~L Z~Z6 6b+ ShIS~I3IS 3i"i D9 lZ:hlOi"t Oa 00:t0 hifif-SZ
600 ~~ed ~e»!9 1 ;~eng_ol OO~lB1 lBlB Bti+-~m d ~t0~a0 00-9l-un~ p~el~wa 9a -In tur~ti~=' eWuciim~suts of the invention, the circuit arrangvm~nts according to the i nvant.i ~n rrt~r.
u~~scl in a step-up controller.
60~31I3S tip 1S~19hi1S~:IVti 90bt~Z S~Z6 6bt SIy~IS ~"i J9 lz:NOi"i OD z0:Z0 IVflf-ST
0l0 amd W~19 ! ~~e~S_ol 80~1B1 lBle ei+-gird ~IO~ZO 00-9l-unp panlaaaa r ..
-otop-down controller, torw2rrcl rnnvPrl:Pr or jJUWCL'-Lnc:l.or c:c~mLic~ller circuit.
~'urthEr arlvsnragrc~u:~ ~sritbadimenta of the invention are speciti~d in the apprnpri at.r dC~rdtli.lEl'lt claj.mR .
The invention will bQ Qxplalnati i rt tuc~ctr eletail i n Llie fcrllowinc~ text with roference to exQmplary embodimwnts which are 17.1n:atr~t.rci .lu Che figurCa, which are described briofly below and in which, try way of example:
FIGURE 1 ohowa an electrical circuit ~rr~nyetu~srtl aur:rrZdinQ to the invention for transformation of magnat.i c: tldld energy into dlcctrical field energy, 7.5 FIGURE :~ shows an ill mt.r~t.lmr of energy gape with at leerat 2 cV for semiconductor materi a1 s cat the ~c:Livr~ semiconductor elcmont, with, by way of example, a function r.c~ a umtallic S~t~c~l.Lky ~untent.
FICURE 3 shows an illust.ratinrt ur breakdown field strengths of apt toast 510~5 V/cm fnr samirondunrnr materlala in the activo semiconductor olement, FIGUR» 4 shcwa a Rt.~p-ry u~ntrollEr circuit having an 2~ clcctrica.L circuit arrangRmrrr~ according to rnrr Lmvr<srWiun, FIGUR>J 5 ohowa a stop-down conrrnlldt circuit having au electrical cix'cuit arrangQment arr:c~ri.iitlg to the inv~entinn, 1~TGURE 6 Show' a forward-convQrter ni rauit ttavin~t an Qlectric:~1 c:l~cuit arrangement according r.n the invention, and flVUFcE 7 R?~c~w~ ~t powCr faotor controller caiouit having an sler~rric:~l circuit axrangamEnt acc;c~tding to the invention.
By way of Qxampl~s. Figure 1 ahowc an electrical circuit r~r~r~ngEment G according to the lm~ention for tranoformation tN of rndyicetic f field onergy M into OZ:31I9S tip 1S~19hI1S~~lyti 90bZ~L z~I6 6b+ SI~19W3IS 3i"i :9"J lZ:hICh"i l7O
Z0~Z0 I~flr-St ll0 used ~e'sl~ ~ y e~us-of 90Y1E1 LtIE EY+-~o~d ~IO:ZO 00-9l-un~ p~npa~a GR H'/ 1~ 3943 electrical field enere~y E. The elQatrieai circuit arrangement G is a~.y~1 i ~~i, TZ:S1ISS ti'J 1S2~-113~~hIH 90bZ~Z t~Z6 6bt ShIS4JSIS 3i"i JJ 1Z:I~Oi"i 04 TO:L0 IVflf-SZ
Zt0 osod ro>sal8 t ~~aos-of 80irtE1 tEt6 S>rt-oo~d oalO~tO 00-9l-onr ponloaoa rR 97 p ~94~
in particular, with the input vr~ltagR IIF and has ti 1.
lR~al. urrd rirst energy-etoraqe elemCnt L for magnotic fiold enorgy M and a a~cnnd AnRrgy-aLutarge element C
for electriCt~l fiold energy J;. t'urthPrmora, tE~r.
e~.ectric.al ni rc:u i 1. d~~angement G has on active semiconductor clement D and an raloetrirat ~wi tc:Trlry AlRmpr~l. S. The electrical switching clement s may naaumo at hart one first anti ~nA rsruutici switching ~Cate 31 or 32, reapectivCly. The first energy-storage elwmont L, the second Rnrnyy-sLuraqe element C, the ,active semiconductor elcmont D and the clectrj.ral switchi ng ~1 rrririW S art connected to one another in such ti way that in th~ first switching sfi~l.r. S1 uL the Rwitching ~leruerW 9, the magnetic field onorgy M can be stored in the first energy-st~rnyr~ dlement L, and in t.hr. sduund switching state 82 of the switching Qlsment S, the magnetic fiRld rnrryy M can be transformed from the first erierqy--OtOrago element t0 thQ .BeCOnt.1 Rnr.ryy-storagQ Qlement r. fc~r.~ dld~:trical field enorgy 1;. The energy flow which rosults from r.ha t.rwr~tvrmation of magnetic fi r.1 c1 dciergy M into electrical field onergy E
is passed vii the active ~amironductvt~ dlement D. In rhiw c:dse, the active aemiaonductor olsment D has. irr particular, a forwa.r, d ci 9 rdc:LlGn and a rcvorae direction, thuo allowing transform~ati~n ur cnagnetic field energy tH i rmu rslectrical field onorgy >L in thQ
forward direction, while the Qlectr.ir~.a1 Lidld energy >r stored i n t.lm second energy-otorage element r_. rannc~l.
react to the first energy-stnr~gr_ dlrrm~nt h owing to thA rr.vdise direction.
In the Qxamp7.a i n Fl~ura 1. when the switching alrrnHiiL 3 is in the first awltching star.a S1, a current I1 fed from rhr liiput voltage UE flows through The Lirst energy-otorage atoment L, ~r~ ~ iesult of whivh magnQtir field ene~c~y M is built up in this elemwnt..
The input voltag~ Ul=: may hP Pi Llirrr an AC voltage or a UC voltadP" tnllt~tn the switching element S rhangrb ~u the 3CCOnd switching ~t.a~d 32. the curr4nt I1 ins 1 nt taw u~rted.
~t :31I3S CO lSaSi113~:1~ti 90bT~Z ~~t6 6bt Sh13W3IS 3i"i JJ lz:NDl"i 0(1 Z0:Z21 I~'Ir-Sl el0 ,~d ae~l8 t ~~o~S-~1 90~1E1 late 0~+-m d ~QIp~ZO 00-9t-unr p~~l.a~a f;R 97 P 3993 _ ~a _ whioh results in a currQnt 12, which j~ =pd at least L~um thG first energy-atoraqe elcmcnt L and tlowc via th4 active semicondu~ctc~r e1 amAnt. D, .Lm its forward direction. The current I~ tlowc into the second enerc~y-stor2r~P a1 amAnt. C: w?ieL~ i~ ~G3ult3 in ~'L:31I9S ti0 lSaSfil3~:l~i 9~bZ~Z T~Z6 6bt SIy3W9IS 3i"i JJ lZ~IVDI"i Od 't0:Z0 hlflf-SZ
fl0 ~d m~sl~ t ~aors-of 90flEl lElB Eft-m d ~IO~ZO 00-91-un~ pay toga electrical field enPrc~y F h~ing built up, .i.it NdzLi4ular in the form of the voltage UC.
ps h~~a ~1 rr:ac3y hddm aliown by way of example in Figure l, the first enorgy-storage R1 Rme~.r~r L lm um rmLucli~atllt of the invention is preferably an induativo element, for example a coil. Iri 2 frrri-hwr rmlmdlnmtil, of the invention, thQ ocaond onorgy-storage element ~: is pr~ferably ~ rap~ni i-. i vr. ~lmu~nt, for example a oapacitor. In a further embodiment of thR invPnrlnn, ~.n th~~ r-le~c:t_ti~:al switching element B is prcforably a acmiconduator switching element, for Ax~mFrlr ~ .Cldld-~tfect transistor. In a further embodiment of the inv~ntion, at least onr~ fmrtair_r, iri particular identical, active semiconductor element D' is connected in paral 1 a1 wi i.fi t.lm dc:t_ive aemiconductox element D.
Farallcl aonnoction is advantageously possible wirhrnH:
any Lutt.hez additional measures, oinco the aativra s~omiconduator .lenient T, or D' , whi ~f~ is Vd~c~ribad fu~wlm~ in the followirzq text, hao a positive ;tU temperature ca~ffi~iant,. Tn paL~Liaular, this element i3 in the form of a diode, pretexably a Schottky dj aria.
'fhe i nvRrtt 1 nn will be deSt;t lLed in more detail in the following text with reference to rhea c:c~nyur~enta mentinnad ray way ~t example here.
As is show7"~ by w2~y nf. axHrnpl~r in Fiqurea 2 and J, t_lirs aemicvnduator material of the act ivP
semiconductor element D 2ornr~ii rty Lu the invention hat3 an energy gap VB of at least :2 ev, in ela~rrnn v~lt.a, and a bre2kct~wn fl~slcl at~:ength CK of at laast JO 5''10~5 V/cm, in volts par r..AntimPtre. Tlid "10~5"
nataric~n lir this cane correopondo to the notation "lE+5".
In figure 2, by way of ~xample, the Pnr.tyy gap VB of thQ semir~ncW o:t_r.~t materiel of the active 33 ;~dmiconductor element D is shown in gymtrc~liu form.
according tn I.hr_ invention. to be at least 2 eV_ The energy gap V8 is in this case 1-hr. e~mrgy difference bP~WRPr1 Llm energy level of the valwncy band ~:v ant! The bT:31I3S t!O 1S~13H13~:hIG 90bZ~Z Z~~6 6b+ SIV9WSIS 3i"i °J9 1Z:1~0~"i Oa c0:z~ nnr-sz 9l0 esed ~essit! ! ~~eWS-of 99Y1B1 IEIE 6Yt-~~d eeIO:ZO 00-9l-un~ penle~ea rR 97 P 3943 _ 7~ _ onorgy level of the conduCtinn h~n~1 >rC. The euet~y ldv~sl of the E'ermi level i~ ~l~o ohown, for assistance.
The illustration is Fir~urR ~ i :~, try ST:31I3S ti'J 1S~13H13~:IVH 90bT~L Z~Z6 6b+ SIV~3IS 3~"~ JJ 1Z:IV0~"i 00 c~:Z0 Nflf-SZ
910 used ~eDW 9 ! m e~S-of 9091E1 IEIB 89+-road me10:Z0 00-91-unf P~~mu~b C:k 97 ~ 3943 _ g way of example, rclatod to 3 ~Bemiconductor junction rn a m4taliia snhnttky c:wW dc:L in the direction of tho ordinate . In Figure '.~' , by way o= caxample, r. hA hrrr~ kt3uwri tl~ld strength EK of the oemiconductor matwrial of the 3etivc semiconductor elemRnt f) 1~ shown in symbolic form, according to the invontion, to be at least 5*10~5 V/em. Ry way crt e~xdritple. the abscissa of the illustration in Figure ;i shows valu~as of dnri nc~ i rr 1/cm~.'~ crt elm semiconductor material of the active semiconductor wloment u. Th~ numerirwl deLdils fcr this dnFri ny rdptesent only levels chosen by way of ~xample.
In various Pmt7c~ci i mews of the electrical circuit arrangement C according to the invention, thr.
somieondurtnr material vI ll'm active semiconductor element D contains, in particular, sill c-.nn c:Ht~t~icA~ 31C, gallium ni Lc~ld~s Ga~N v~- diamond C diamond, that is to nay carbon with a r91 amnnci caystalline network ~rl~.Lwc:~utt, with the semiconductor matorial having ~n onorgy gap vJi of at least ~ rv died a breakdown field r~trangth CK of at least 5*lU~b v/cm.
In ,furthAr cirslyic variants of the invontion, the semiconductor material of thR antive semic~rlciu~tor elemenr n c:c~cWaims, i.n particular, silicon carbide Sic, gallium nitride GaN or diamond r di arnc~:rd.
If the 'emiconduotar matorial of the ant.lve semiconductor elemPnr. ~ lc~ vne embodiment of the el~svtriaal circuit arrangemQnt V aecarnii ng ~u the invantinn nr in eerie design variant of thra invanti~n contains oilicon carbide Si.C:, then, i n Narticuler, thin has ~n diiwigy gap VD of about 3 oV and a hra~kdown field rstrength ~;lc of abour. 75"10~~ V/cm, as i3 shown by way of r_xdut~-rle in 1:'igures 2 and 3.
It the semi c:cm~iu4tor material of thw active arsmivonductor elomont D in on! Amhndim~snt of the electrical c~.ir.cuit a~tangement G according to the invention or in one dQSign varLarrl of the invention contains c~~r1 lluirc nitride GaN, then, in particul err, ~lris has err enorgy gap vt~ of dh~out 3.2 eV and a breakdown 9'i:31I3S CO lSrJ3H193:NC 90bZ~Z 'f~Z6 6bt SIV3W3IS 3~"~ "J"J 1Z:1~7 00 c0:1.0 Nflf-ST
llp fed ~e» IS t ~~e~S-of 9pYlE1 l6lE EY+-eo~d melp:Ep pp-9l-un~ penleoea ..
field otrcngth EK o~ about 3U"~lU~5 V/cm, aR 1~ shown by way ~f ax~tn~ld in Figturea 2 and 3.
LZ:31I3S tfJ 1S~-113~:hIG 90bT~L Z~Z6 6b+ SN3W3IS Si"i 99 1Z:IVOi"i 17a ~21:L0 I~II~f-SZ
t10 oDed m~l~ f ~~e~3-of 90~1e~ 1610 eft-gad ~10~Z0 00-9l-unp po~loooa . .~. , --., .
- a~ -If thQ a~miconductor m2stPrial of the t~c:~lv~s r~rmic:umclu~tcrr element D in one ombodim~nt of the electrical circuit arrangPmant: G dur:ordi.nQ to the invention or in ono design variant of the 1 nvRnt: ! cm b contains dismnnci C: cildmurml. then. in pnrtieular, thin has an energy gap VB of about 5.5 av and a hrr.~kciuwss fir.l.d 'Lteng'th EK of about 100*10~5 V/cm, as is likewiaQ shown by way or eXamFslR im Flyutea 2 and 3.
Dy way of example, Figures o tn ~ shnw J. t) advarstageous ri rrni t. dttr~rir~cmenta in which the invention is used.
Fl,yurc~ 4 shows, by way of example, a stop-up controller circuit H having an Rt~nt.t~lual oirouit arrangecuess~ f3 accoa:dinq to the invention, to which, in 15 particular, an input v~trag~ tlE1 is supplied and which lsr~a an output voltaqc U111. Th4 stop-up cantrnlt ar circuit H has, fc~r~ exdm~la, a coil L11, a field-effect tranai9tar S11, a semiconductor di~cia nl.l, in particular a Sc:hc~L~kyliode. arid a capacitor C11. Tha 20 ooil L11 iri connected in series wi t.ts ~lsc input voltage tTFl. Tlue~ field-effect tranoiotor S11 and she capacitn.r.
C11 arQ arrangRd cinwnstream tt~uu~ the coil L11, in paiallel with the input voltag~ U~:l . The sAmi c-.ariduc:Lui diode U11 is arranr~rci iss Llw forward direction betweQn 25 the field-effect txansoistor s11 and t.tl~ c:dpa~citor C11, ind 1 n ar~~t~s~ with the coil L11. According to the invention, thw semiconductor dinrie~ D11 la composed of a :~e_mic':unductor material t~ccording to Lhe invent i.nn . Wtmu the bald-~tfQCt tranai at.c~r S11 is switched on and oft, 30 magnetic field energy is transformed rr~m the cell L11 into thQ cara~ir.nr C11 rsa electrical field energy.
Ciqurc 5 ehow~c, by way of Pxampl~s. a step-down rr~nrrnl ldt oircuit T having an oloctrical ri rc:w i ~
arrangement G according r.n thr invention, in which, in 't!5 partic;ulai. an input voltage t)E:~ is supplied anti wlsic.,h has an output vnt rac3r. t)A2 . The step-down controller c:itr:uit T has. for example, a coil L21, a Ii~sld-effect transistor S?.t, H ~maiconductor 8t~91I3S f~a lSa9h113~:IdH 90bT~L z~T6 6b+ SI~3W3IS 3i"i 9J 1Z~IyOi"i (7O
~0~Z0 Nflr-S1 Elp ~~d ~es'!S t ~~e~5-of 9pYltl 161E EYt-~~d ~elp:i0 pp-4l-un~ p~nl~»b diode D21, in particular a Schottky diode, and ~
L:dj.7dG:l~uL C21. The field-effect tranai3tor S21 i~
connected in series with the inner v~1 t:egtr I7E2 . Tlr~s semiconductor diodes D21 and the capacitor C21 arQ
arranr~Pd i n the rrvr.,r.~a~ di~d~:Liori downstream from the field-effect translator Sll, in parallel with the input VUlLdy~ UE2. Tho coil L21 is arranged between tha semiconductor diode U21 and the oarari,r, ~r C:~1 , ~nc3 lu series with the field-cffcat translator S21. According to the inventlnn, 1-hR :,rmlc:umclu~Lor diode D21 is composed of a 3emivonductor material according to the invanfii~n. Wlm~ ~i~rs field-effcct transistor X11 is owitahed on and ott, magnetic field energy i~
transfarmad rruui l.he flail L21 into the capacitor C21 as l~ electrical field energy.
figure 6 shows, by way of example, a tarward-eonvertAr c:i rc:~~t I. Dtn1 lidvirig an electrical circuit arrangement C according to the invention, to which, in particul ar, xn icrpuL vull.age UE3 is supplied and which has an output voltage 17A3. In this c:axr., r~ ~tlmdiy c:irc:uiL DWl and/or n~ secondary circuit DW:? of the forward-converter of rr»i r. fivll have/has l.lie alectiical circuit arrangement C according to the invention. The primary circuit >7m1 and t.?~r. 5dc;uldary circuit DW2 are c5 preferably docoupled from one another by mR~nx m L a transformwr T3. Tkm primary circuit DW1 hac, for example, a first capacitor C31, a lEirRt r:c~ll L31. a Llt~L aemicvnductor diode D31, in particular a ~chottky diode, and a first fielri-Pff~c:t. ~Lamistor 331. As a rule. the fir3t soil L31 is a winding elemAnr ~t the primary coil wi nc91 ry, in particular a ao-called demagnetizntion winding, of the transformer T?l. Tlres secnn~iary c:lLUUit DW2 has, for example, a second semiconductor diode U32, in part.i c:uldt ex 9chottky ~5 diode, a Ll~ird Semiconductor diode D33, a second coil L3~ and a second sansei tar C:32 . When the field -effect t.L'dtl'Sl9tOr S31 is switched on and off, magnotia fi p1 c3 energy is transfnrmrd rtwn the first coil L31 into the fi~:at capacitor C31 as electrical field PnPrc~y.
6Z:31I9S C~ lSa~i.LS~:IVC 90bT~L t~t6 6b+ SI~3WSIS 3i~i '99 1Z:IVCh"i Oa ~0:Z0 Nflr-S1 OZl1 mid ~e~l~ ! iaem$_ol 90Ylel tats EYt-~~d mEIO~ZO 00-9l-onf Pm~lm~ma rR 97 P 3943 - 1 'I -The capacitor C31, tho first rvi 1 T~31 which is c:r~rurdc:t_wcl in the reverse direction and in aeries with the first semiconductor dio~la O~1 , drml Llle first field effect tranaiotor Sal which is connected in series wi th t.hr_ ptiuraiy of the tran3former T3 arc arranged in tho primary circuit uWl, in raraltr~l wil-,h the lripuL voltage UE3. When the field-effect transistor S31 is awitchod on and oft, mac~nPr. i r-.. f i rlc3 dm~~y is transformed from the firot coil L31 into the first lU capacitor C31 as elRrr.ri~~rl flrld eiZergy.
The third semiconductor diod~ u33 is connected in rhA :sr:c:cmcidiy ~:ircu~.t DW2, in eerico with the secondary of the transformer T3 and in tt~r. Lutwxr~l directive. T!m second semiconductor diodo D32 and th~
second capacitor C32 are arrsnyr_d, in the reverse dizectivn, downstream from tho third semiconductor di.oda~ L~33, i n par~lldl with the secondary of the transformer T3. The second coil L32 is arrangari t;~r~l.wddm thQ seronci ~tarnlr.:umiuvtur diode D32 and tho second eApacitor Cj:t and in serj.a~ w i. t.ti the third sE?rmi c:nrrduc:Lur diode D33. When the bald-effQCt transistor S~1 is awir. r..hpci ~n and vrt, rnagnetic field tstWlS~y is tran3formed from the second coil L32 inr.n fi,hr:
second capacitor f.::~9 a:~ c~lCC:Ltival field energy.
Tho first sQmiconductor diodes 1731 d1~1C1IVl the sQCOnd ~Pmi r:urrciuc:tvr diode D32, but preferably both, are, according to the invent i, Win, c:mn~rvsed of a sami~:rmdu~Lvr material according to the invQntion- Thr.
third semiconductor diode ~~:1 mdy likewise be eompoaod ur a semiconductor matorial according to rhR inventivr~.
le'igure 7 shc~w:~, Ly way of examples, a power Lxcaor circuit fFC of an elraetrlcal cirr» i t. d~iangement accord~.nrl t.c~ ~tr~s invention, to which, in particular, an input voltage U1;4 is suprl i rd acid which hao an ;i5 ourn»r. voltage UA4 . The power-fsetor circuit P~'r i s also roferrcd to, in parric:ulat, as a so c~;llod "powQr far..rnr s;urrtrvller" circuit. In this casA, ~n d~cCcrnal c3aeade circuit Pfr ~nci/uL an internal caaoadv circuit OZ:31I3S CO 1S~13N13~:t~i 90bZ~Z Z~Z6 6bt SIV3W3IS 3i"i J9 lZ:IyQ"i OQ bO:L~
lyfir-S1 ~Y-_ Ito used ~esa~g ! m e~g_ol 9091E1 1618 at+_~ro~d melo:ZO 00-91-un~ pw va~a GR 97 P 'i943 - lla -fI of the pow~r-factox circuit PFC has thA A1 art-.ri aal ri r~mi t-.
ZC:31ISS ti'J 1S~I1S~:I~i 90bT~L t~T6 6b+ SN3W3IS 9i"i JJ 1Z:IVOi"i Od b0:L0 IVfif-ST
ZZO ~~J »» 19 ! ~to~g_ol 9Ot'1B1 1E18 03r+-m d w IO~tO OO-9t-un~ p~~l~ova arrangemQnt G accordinr~ to r, h~ i nvPnr.1 on. The exteftictl cascade circuit rA has, for examplo, a first coil L41, a first fielel-effar~t fi.ranyi al_Ut' S41 and a first ocmiconductor di.od~ U41, in particular 2 Sr~hnrr.ky !5 di c~cW . Tltw internal cascade circuit fI hao, for example, a st~rcond coil L42, a seGnnr'1 aRmi c:nrvcW c:t_c.~t diode D42, in particular to Schottky diode, and a third semicondttCtor d~.ndR n4~. TT1H E:xl_dtttfll Ga3CadC circuit fA and tho internal aascado circuit PI have a cnmmnn rapac:i t.ctr C41. W1'iert the first and second field-effect tranaiotors S91 and 59:G, respectively, are swi tc:h~ci c~ri and off. magnetic field energy from the first soil L41 and magnetic field enerr~y from rhe~. Hrc:c~tttl u~il L92 era tralzsformed into the capacitor C41 ao electrical field 13 ~on~rgy.
In the oxtornal cascade circuit F~~, the Lixsr.
c-r~t 1. L41 is ~:unnectad in aeries with the input voltage UE4. Thw first field-affect transi star S41 dw1 the C.djJdl:1'tUR C41 are arranged down3trctam from the first au coil L41, in pare 1 1 a1 wi t:h t.lm iryut voltage UC4 . The first semiconductor diode D41 is arrang~d, in the foxwarA di rection. bel.we~stt the first field effect tran3iator S91 and the capacitor C41, anti in seti~~
with rhr. flt~~t_ coil L41. When tho firot fiold-effect 25 transistor S41 i.s switched nn and ctLL, mat~natic field dr~digy is transformed from the first coil L41 into the capacitor c:41 as electriaa.l fi A1 c9 ermt~y.
In the intornal casead4 Circuit PI, the !~~~c:arid coil L42 i.s c:nnnrc:l_eci t_~ thG common node bctwoon the 30 first coil L41, th~ first field-AffP~r transist~t~ S41 ~tnd t_lm first semiconductor diodo D41. Tha second fiold-ettQCt transistor s42, which is connected in aerios with the third oamiconduator diodo D43 (which is connected in the f~rwarc9 cilt~~tivnl , and the capacitor 3~ C47, arc arranged downatroam from the second aoll T,4~, in parall a1 w i t.Tr Llt~ first field-effect transistor 541.
The second semiconductor diode G42 is arrangrd lm the forward ditdraion between the second field-affoct ~Z:91I9S tie lSa3H19~:hlti 90bT~Z '~~Z6 6bt SIV3W3IS Si"i °YJ 1Z:I~lOn Of3 ~:LO IVflf-SZ
BZG esed ~e~p ! ~~e~S-of B~YlE1 IEIE EYt-~o~d eel0:Z0 00-9l-un~ penloeea ~R 97 P 3943 - 12a -trai'sictor S42 and tho capacitor C41, and in series with the second coil L42.
~~:S1I9S C~ 1S~1J.3~:hIG 90bT~Z L~t6 6b+ SI~3WSIS 3i"i J9 lZ:IyOi"i 00 S0:Z0 hair-SZ
fE0 ~»d m~19 ! im~S-of 80~t61 t6t6 Ef+-gad ~l0=Z0 00-9l-unr p~nl~aoa GR ~'! P .i ~ 4 ,i Tilts rlt 'S (,. ~dmluuJl3uc:l.ut tiiu~,id D$1 dll'ld/vx the sQCOnd sQmiconductor diodes u4~ arQ/is, according to thQ
invention, composed of a semiconductor matorial Flt)C:Ur'C.~illt~ ~.U Ltll~ ilJVt'_111.1C)11. TIC LtJit'C.~
'.it'JlLI.tC:Vl1(~UC.:LUt diode D43 may likewise be composed o~ a semiconductor 111dLCt1d1 dtrC:Utllllll~ LU (_tltl 1JJVL-'IlL1U11.
b~~31I3S ties 1S~13H13~:I~ti 90bt~Z Z~Z6 6bt SI~3W3IS 31"1 J°~ 1Z:N01"1 Od S0:L0 I~tlf-S'
Claims (20)
1. An electrical circuit arrangement (G) for transformation (w) of magnetic field energy (M) into electrical field energy (E), having at least one first energy-storage element (L) for magnetic field energy (M), a second energy-storage element (C) for electrical field energy (E), an active semiconductor element (D) and an electrical switching element (S) which can assume at least one first and one second switching state (S1, S2), a) which are connected to one another in such a way that a1) in the first switching state (S1) of the switching element (S), the magnetic field energy (M) can be stored in the first energy-storage element (L), and a2) in the second switching state (S2) of the switching element (S), the magnetic field energy (M) can be transformed from the first energy-storage element (L), bring passed via the active semiconductor element (D), to the second energy-storage element (C) for electrical field energy (E), wherein b) the active semiconductor element (D) has an energy gap (VB) of at least 2 oV and a breakdown field strength (EK) of at least 5*10~5 V/cm, and wherein c) at least one further active semiconductor element (D') is connected in parallel with the active semiconductor element (D).
2. The electrical circuit arrangement as claimed in claim 1, characterized in that the semiconductor material of the active semiconductor element (D) contains silicon carbide (SiC).
3. The electrical circuit arrangement as claimed in claim 1, characterized in that the semiconductor material of the active semiconductor element (D) contains gallium nitride (GaN).
4. The electrical circuit arrangement as claimed in claim 1, characterized in that the semiconductor material of the active semiconductor element (D) contains diamond (C diamond).
5. An electrical circuit arrangement (G) for transformation (W) of magnetic field energy (M) into electrical field energy (K) having at least one first energy-storage element (L) for magnetic field energy (M), a second energy-storage element (C) for electrical field energy (E), an active semiconductor element (D) and an electrical switching element (S) which can assume at least one first and one second switching state (S1, S2), a) which are connected to one another in such a way that a1) in the first switching state (S1) of the switching element (S), the magnetic field energy (M) can be stored in the first energy-storage element (L), and a2) in the second switching state (S2) of the switching element (3), the magnetic field energy (M) can be transformed from the first energy-storage element (L), being passed via the active semiconductor element (D), to the second energy-storage element (C) for electrical field energy (E), wherein b) the semiconductor material of the active semiconductor element (D) contains silicon carbide (SiC), and wherein.
c) at least one further active semiconductor element (D') is connected in parallel with the active semiconductor element (D).
c) at least one further active semiconductor element (D') is connected in parallel with the active semiconductor element (D).
6. The electrical circuit arrangement as claimed in one of claims 1, 2 or 5, characterized in that the active semiconductor element (D) has an energy gap (VB) of about 3 eV and a breakdown field strength (EK) of about 25~10~5 V/cm (Figure 2, Figure 3, SiC).
7. An electrical circuit arrangement (G) for transformation (W) of magnetic field energy (M) into electrical field energy (E) having at least one first energy-storage element (L) for magnetic field energy (M), a second energy storage element (C) for electrical field energy (E), an active semiconductor element (D) and an electrical switching element (S) which can assume at least one first and one second switching state (S1, S2), a) which are connected to one another in such a way that a1) in the first switching state (S1) of the switching element (S), the magnetic field energy (M) can be stored in the first energy-storage element (L), and a2) in the second switching state (S2) of the switching element (S), the magnetic field energy (M) can be transformed from the first energy storage element (L), being passed via the active semiconductor element (D), to the second energy-storage element (C) for electrical field energy (E), wherein b) the semiconductor material of the active semiconductor element (D) contains gallium nitride (GaN), and wherein c) at least one further active semiconductor element (D') is connected in parallel with the active semiconductor element (D).
8. The electrical circuit arrangement as claimed in one of claims 1, 3 or 7, characterized in that the active semiconductor element (D) has an energy gap (VB) of about 3.2 oV and a breakdown field strength (EK) of about 30~10~5 V/cm (Figure 2, Figure 3, Gan).
9. An electrical circuit arrangement (G) for transformation (W) of magnetic field energy (M) into electrical field energy (E) having at least one first energy storage element (L) for magnetic field energy (M), a second energy-storage element (C) for electrical field energy (E), an active semiconductor element (D) and an electrical switching element (S) which can assume at least one first and one second switching state (31, 32).
a) which are connected to one another in such a way that a1) in the first switching state (S1) of the switching element (S), the magnetic field energy (M) can be stored in the first energy-storage element (~), and a2) in the second switching state (S2) of the switching element (S), the magnetic field energy (M) can be transformed from the first energy-storage element (L), being passed via the active semiconductor element (D), to the second energy-storage element (C) for electrical field energy (E) (Figure 1), wherein b) the semiconductor material of the active semiconductor element (D) contains diamond (C diamond), and wherein c) at least one further active semiconductor element (D') is connected in parallel with the active semiconductor element (D).
a) which are connected to one another in such a way that a1) in the first switching state (S1) of the switching element (S), the magnetic field energy (M) can be stored in the first energy-storage element (~), and a2) in the second switching state (S2) of the switching element (S), the magnetic field energy (M) can be transformed from the first energy-storage element (L), being passed via the active semiconductor element (D), to the second energy-storage element (C) for electrical field energy (E) (Figure 1), wherein b) the semiconductor material of the active semiconductor element (D) contains diamond (C diamond), and wherein c) at least one further active semiconductor element (D') is connected in parallel with the active semiconductor element (D).
10. The electrical circuit arrangement as claimed in one of claims 1, 4 or 9, characterized in that the active semiconductor element (D) has an energy gap (VB) of about 5.5 eV and a breakdown field strength (EK) of about 100*10~5 V/cm (Figure 2, Figure 3, C diamond).
11. The electrical circuit arrangement as claimed in one of the preceding claims, characterized in that the first energy-storage element (L) for magnetic field energy (M) in an inductive element (L), in particular a coil.
12. The electrical circuit arrangement as claimed in one of the preceding claims, characterized in that the second energy-storage element (C) for electrical field energy (E) is a capacitive element (C), in particular a capacitor.
13. The electrical circuit arrangement as claimed in one of the preceding claims, characterized in that the electrical switching element (S) is a semiconductor switching element (S), in particular a field-effect transistor.
14. The electrical circuit arrangement as claimed in one of the preceding claims, characterized in that the active semiconductor element (D) and/or the further active semiconductor element (D') are/is a Schottky diode.
15. The use of an electrical circuit arrangement as claimed in one of the preceding claims in a step-up controller circuit (H, D11).
16. The use of an electrical circuit arrangement as claimed in one of the preceding claims in a step-down controller circuit (T, D21).
17. The use of an electrical circuit arrangement as claimed in one of the preceding claims in the primary circuit. (DW1, D31) of a forward converter circuit (DW).
18. The use of an electrical circuit. arrangement as claimed in one of the preceding claims in the secondary circuit (DW2, D32) of a forward converter circuit (DW).
19. The use of an electrical circuit arrangement as claimed in one of the preceding claims in the external cascade circuit (PA, D41) of a power-factor circuit (PFC).
20. The use of an electrical circuit arrangement as claimed in one of the preceding claims in the internal cascade circuit. (PT, D42) or a power-factor controller circuit (PFC).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19756873A DE19756873A1 (en) | 1997-12-19 | 1997-12-19 | Electrical circuit arrangement for transforming magnetic field energy into electrical field energy |
| DE19756873.4 | 1997-12-19 | ||
| PCT/DE1998/003603 WO1999033160A1 (en) | 1997-12-19 | 1998-12-08 | Electrical circuit arrangement for transforming magnetic field energy into electric field energy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2315020A1 true CA2315020A1 (en) | 1999-07-01 |
Family
ID=7852743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002315020A Abandoned CA2315020A1 (en) | 1997-12-19 | 1998-12-08 | Electrical circuit arrangement for transforming of magnetic field energy into electric field energy |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP1040556A1 (en) |
| JP (1) | JP2001527377A (en) |
| KR (1) | KR20010033341A (en) |
| CN (1) | CN1290422A (en) |
| CA (1) | CA2315020A1 (en) |
| DE (1) | DE19756873A1 (en) |
| TW (1) | TW416181B (en) |
| WO (1) | WO1999033160A1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10011523A1 (en) * | 2000-03-09 | 2001-09-20 | Siemens Ag | Power supply circuit with silicon-carbide components especially for converter |
| JP2002218742A (en) * | 2001-01-15 | 2002-08-02 | Nippon Inter Electronics Corp | Serially-connected circuit for schottky barrier diode, and the schottky barrier diode thereof |
| SE0101848D0 (en) * | 2001-05-25 | 2001-05-25 | Abb Research Ltd | A method regarding a junction barrier Schottky diode, such a diode and its use |
| JP4639557B2 (en) * | 2001-09-04 | 2011-02-23 | 三菱電機株式会社 | DC power supply, DC power supply load device |
| US7116567B2 (en) * | 2005-01-05 | 2006-10-03 | Velox Semiconductor Corporation | GaN semiconductor based voltage conversion device |
| JP4980126B2 (en) * | 2007-04-20 | 2012-07-18 | 株式会社日立製作所 | Circuit device having freewheeling diode |
| JP2010220478A (en) * | 2010-07-09 | 2010-09-30 | Mitsubishi Electric Corp | Dc power supply and dc power loading device |
| JP5701595B2 (en) * | 2010-12-28 | 2015-04-15 | 三洋電機株式会社 | Grid connection device |
| JP5170270B2 (en) * | 2011-03-09 | 2013-03-27 | 三菱電機株式会社 | Power supply |
| JP2011160656A (en) * | 2011-05-24 | 2011-08-18 | Mitsubishi Electric Corp | Dc power supply |
| JP5822773B2 (en) * | 2012-04-17 | 2015-11-24 | 三菱電機株式会社 | Power converter |
| JP5664601B2 (en) * | 2012-07-06 | 2015-02-04 | 三菱電機株式会社 | Room air conditioner |
| CN109655691B (en) * | 2018-12-25 | 2021-01-22 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method, device and system for monitoring degradation of power device in board-level circuit |
| CN114244147B (en) * | 2021-12-17 | 2023-05-12 | 四川大学 | Electromagnetic field coupling generating device and method for electromagnetic strengthening treatment |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4437146A (en) * | 1982-08-09 | 1984-03-13 | Pacific Electro Dynamics, Inc. | Boost power supply having power factor correction circuit |
| US4801859A (en) * | 1986-12-23 | 1989-01-31 | Sundstrand Corporation | Boost/buck DC/DC converter |
| DE3914799A1 (en) * | 1989-05-05 | 1990-11-08 | Standard Elektrik Lorenz Ag | FLOW CONVERTER |
| US5256888A (en) * | 1992-05-04 | 1993-10-26 | Motorola, Inc. | Transistor device apparatus employing free-space electron emission from a diamond material surface |
| US5334853A (en) * | 1993-09-29 | 1994-08-02 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor cold electron emission device |
| US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
| JPH0897441A (en) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | Manufacture of silicon carbide schottky diode |
| US5821576A (en) * | 1995-10-18 | 1998-10-13 | Northrop Grumman Corporation | Silicon carbide power field effect transistor |
-
1997
- 1997-12-19 DE DE19756873A patent/DE19756873A1/en not_active Withdrawn
-
1998
- 1998-11-30 TW TW087119826A patent/TW416181B/en active
- 1998-12-08 KR KR1020007006803A patent/KR20010033341A/en not_active Application Discontinuation
- 1998-12-08 WO PCT/DE1998/003603 patent/WO1999033160A1/en not_active Application Discontinuation
- 1998-12-08 CN CN98813317A patent/CN1290422A/en active Pending
- 1998-12-08 JP JP2000525963A patent/JP2001527377A/en not_active Withdrawn
- 1998-12-08 EP EP98963391A patent/EP1040556A1/en not_active Withdrawn
- 1998-12-08 CA CA002315020A patent/CA2315020A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| DE19756873A1 (en) | 1999-07-01 |
| WO1999033160A1 (en) | 1999-07-01 |
| EP1040556A1 (en) | 2000-10-04 |
| KR20010033341A (en) | 2001-04-25 |
| JP2001527377A (en) | 2001-12-25 |
| TW416181B (en) | 2000-12-21 |
| CN1290422A (en) | 2001-04-04 |
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