WO1992008946A2 - Anordnung zum messen linearer abmessungen auf einer strukturierten oberfläche eines messobjektes - Google Patents
Anordnung zum messen linearer abmessungen auf einer strukturierten oberfläche eines messobjektes Download PDFInfo
- Publication number
- WO1992008946A2 WO1992008946A2 PCT/EP1991/002088 EP9102088W WO9208946A2 WO 1992008946 A2 WO1992008946 A2 WO 1992008946A2 EP 9102088 W EP9102088 W EP 9102088W WO 9208946 A2 WO9208946 A2 WO 9208946A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- measuring
- resonator
- circuit
- measurement
- tip
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/14—Particular materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/28—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/34—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring roughness or irregularity of surfaces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/32—AC mode
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
Definitions
- the invention relates to an arrangement for measuring linear dimensions on a structured surface - a measuring object, in which a tip probing the surface is attached to a resonator movable parallel to the surface by means of guides, to which displacement measuring systems are coupled for position determination and which is connected to an evaluation circuit for detecting changes in resonance and a connected control circuit which is connected to actuating elements which act on the resonator perpendicular to the surface.
- the invention is Q especially in two-coordinate measuring devices, in measuring devices for the
- Ultra-precision machining technology for probe cutters, for measuring devices for measuring microelectronic semiconductor structures, for roughness measuring devices, for profile measuring devices and for producing microstructures on surfaces. 5
- optical arrangements For the measurement of linear dimensions of semiconductor structures, optical arrangements are known which achieve a linear resolution of approximately 0.7 ⁇ m with the aid of optical imaging systems and Q optoelectronic receivers.
- the measuring process takes place in a vacuum, so that the vacuum clamping which is customary for wafers cannot be used, and measurements on wafers with these arrangements can therefore only be carried out to a limited extent.
- measurement errors occur here as a result of electron-optical ones
- Nanometer over the surface of the test piece, so that between the tip and the surface either a tunnel current of a few nanoamperes is formed at a voltage of a few millivolts (STM) or interatomic forces become effective (AFM), which are kept constant by a distance controller.
- STM millivolts
- AFM interatomic forces
- test specimen surface at the STM must be electrically conductive due to the tunnel current.
- An electrical measuring circuit determines the shift in the resonance frequency of the piezoelectric oscillator, which is caused by touching the test specimen surface with the stylus.
- a control circuit connected to the measuring circuit and an actuating unit carrying the piezo oscillator are used to determine the profile.
- a disadvantage of this arrangement is that the one shown in the measuring arrangement cube-shaped geometry of the piezo oscillator does not allow harmonic oscillation and that the probe needle, which is massive in comparison to the piezo oscillator, dampens the natural resonance of the piezo oscillator. Furthermore, the measuring method used for the resonance frequency difference measurement is slow in time and relatively insensitive and is therefore less suitable as a highly dynamic and at the same time highly sensitive measuring principle (EP 0 290 647).
- probe cutters which have a diamond tip as
- Probe tip depending on probe tip geometry and measuring force achieve a lateral resolution of 6 nm.
- a disadvantage of these conventional stylus devices is that due to dynamic effects, e.g. Jumping the stylus, only low measuring speeds are possible, which require long measuring times.
- the constant contact of the diamond tip and the surface of the test specimen requires measuring forces of at least 10 N, which can create traces of injury on the surface of the test object (special print from "Control" 1 1/12, 1 87).
- stylus cutters are known, the stylus tip of which is attached to a piezoelectric s pizzate crystal with a large piezo effect.
- Crystal acts as a spiral spring, which generates electrical voltages when the probe tip is moved over the surface of a measuring object, which voltages are further processed to obtain measured values.
- a disadvantage of these solutions is that only a low measuring speed is possible and that the measuring forces of the probe tip are too great (Perthen, J .: “Checking and measuring the surface shape", Carl Hanser Verlag, Kunststoff, 1949, p.118 -1 1 9).
- a piezo crystal is integrated in a lever which scans the surface with a tip, the measuring forces of which it is loaded are used for signal acquisition. Disadvantages are the large measuring forces, which make it difficult to scan microstructures without damaging them, and the only low permissible measuring speeds due to the quasi-static measuring method (DE 8 600 738.6 Ul).
- a touch detector is known in which the contact to the surface is determined by a piezoelectric rod resonator on the end face thereof a tip, preferably made of diamond, is attached.
- the rod resonator is excited by a generator or oscillator in self-resonance via lateral electrodes.
- An electronic measuring circuit evaluates the frequency or amplitude changes of the resonator which occur when the probe tip touches the measuring surface as a contact signal which, in conjunction with an actuator, can be used to determine the profile.
- the disadvantage of this arrangement is that the rod resonator produces high measuring forces and has low resonance frequencies, so that the measuring surface can be damaged and only low measuring speeds can be achieved (WO 89/00672 AI).
- Tasfites conspiracy works according to an impulse scanning method, in which a stylus is raised in a pulse from the surface of the measurement object and lowered again.
- the device works almost statically. Raising the stylus serves to reduce frictional and tangential forces in the bearing points of the measuring mechanism. With this device it is disadvantageous that the pulse speed is low and that the measuring forces are too high (Lehmann, R .: “Guide to Length Measurement Technology", VEB Verlag,technik Berlin, 1960, p. 277).
- the object of the invention is to further develop a generic measuring arrangement in such a way that the measuring accuracy is improved, the measuring speed is increased and the measuring forces to be applied are reduced.
- phase measuring circuit is provided as the evaluation circuit, which phase difference of the alternating voltage between at least one first electrode arranged on the resonator and an electrical reference point and the alternating voltage between at least one other on the resonator arranged electrode and the electrical reference point determined.
- the measuring arrangement according to the invention makes it possible to scan the surface of the test object (measurement object) with high frequency with the aid of a piezoelectric resonator.
- a micro-probe tip is used as the probing tip Diamond is used, which is wear-resistant, because of its small mass not noticeably influences the resonance behavior of the resonator and is designed with a total size of less than 20 ⁇ m. Furthermore, it is advantageous as a resonator piezo oscillator with high
- Vibration quality made of lithium niobate as a thickness transducer, made of quartz with an AT cut as a thickness transducer or made of quartz as a rod or tuning fork transducer.
- Evaluation circuit etc. a device for detecting changes in phase on one and the same resonator, but different electrodes mounted on it.
- the measurement signal of the evaluation circuit forms the input signal of a controller.
- the output signal of the controller acts on a piezoelectric, magneto-elastic or micromechanical control element which carries the resonator and brings it into contact with the surface of the test specimen in such a way that the contact shocks
- the control element should have a displacement measuring system in order to be able to obtain measurement values free of hysteresis.
- FIG. 1 shows a basic illustration of an exemplary embodiment of a measuring arrangement according to the invention with a resonator in the form of a LiNbO, thickness transducer and
- Fig. 2 is a schematic representation of another embodiment of a measuring arrangement according to the invention with a resonator in the form of a quartz Dickerscherschwingers. From detailed description of the drawings
- the measuring arrangement shown in principle in FIG. 1 has a frame 1, to each of which a coarse plate 2 and fine divider 3 connected in series is mounted.
- a resonator in the form of a LiNbO ⁇ thickness transducer 4 is fastened to the fine adjuster 3, on which a probe tip 5 is arranged, which touches the surface 6 of a measurement object 7.
- the thickness transducer 4 provided with electrodes is connected to an oscillator circuit 8 and a circuit 9 for detecting changes in the phase.
- the circuit 9 is connected to a control circuit 10, the outputs of which are to the coarse controller 2 and the
- the fine adjuster 3 is coupled via a spacer ring 11 to a resonator in the form of a quartz thickness shear transducer 12 with an AT cut, to which (as in FIG. 1) a probe tip 3 is attached is.
- Coarse adjuster 2 and fine adjuster 3 cause one
- the adjustment path can be detected with a position measuring system.
- the resonator 4 with the probe tip 5 can be guided in the direction 14 over the surface 6.
- the oscillator circuit 8 sets the thickness oscillator 4 or the thickness shear oscillator 12 in a high-frequency oscillation in
- Input signals for the control circuit 10 which acts on the coarse adjuster 2 and fine adjuster 3 such that the probe tip 5 exerts only small measuring forces on the surface 6.
- Measurement methods that react to changes in the resonance frequency or amplitude require an uninfluenced reference oscillator for a comparison measurement.
- the electronic evaluation methods for this, e.g. Frequency measurement, react sluggish in time.
- the phase reacts very sensitively and quickly to changes in the resonance conditions.
- Measuring methods do not necessarily require a reference transducer, but can be carried out on one and the same piezo oscillator because phase changes occur in the piezo oscillator itself.
- the large coupling factor and the oscillation of the probe tip 5 perpendicular to the surface 6 have an advantageous effect.
- the thickness transducer 4 can be coupled to the fine adjuster 3 with a kit layer in such a way that a high reflection of the piezo vibrations occurs on the end face of the fine adjuster 3 and its vibration is only slightly damped by the coupling.
- the Dickenscherschwinger 12 used in FIG. 12 is used in FIG.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4035076.2 | 1990-11-05 | ||
DE4035076A DE4035076A1 (de) | 1990-11-05 | 1990-11-05 | Anordnung zum messen linearer abmessungen auf einer strukturierten oberflaeche eines messobjektes |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1992008946A2 true WO1992008946A2 (de) | 1992-05-29 |
WO1992008946A3 WO1992008946A3 (de) | 1992-07-23 |
Family
ID=6417637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1991/002088 WO1992008946A2 (de) | 1990-11-05 | 1991-11-05 | Anordnung zum messen linearer abmessungen auf einer strukturierten oberfläche eines messobjektes |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0509078A1 (de) |
DE (1) | DE4035076A1 (de) |
WO (1) | WO1992008946A2 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10345993B4 (de) * | 2003-10-02 | 2008-07-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Messen und zum Feinstellen eines Werkzeuges in einem Werkzeughalter und Verfahren zum Messen einer Bearbeitungskraft |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH667835A5 (en) * | 1985-10-14 | 1988-11-15 | Elektroniktechnologie Get | Tactile sensor scanning workpiece surface - uses sensor pin in mechanical oscillation system with driver coil for intermittent contact with scanned surface |
EP0290647A1 (de) * | 1987-05-12 | 1988-11-17 | International Business Machines Corporation | Atomares Kräftemikroskop mit oscillierendem Quarz |
WO1989000672A1 (en) * | 1987-07-20 | 1989-01-26 | Krautkrämer Gmbh & Co. | Process for detecting a nearly pinpoint, essentially force-free contact of small area between a probe and a solid object, and contact detector |
EP0338083A1 (de) * | 1987-10-09 | 1989-10-25 | Hitachi, Ltd. | Rastertunnelmikroskop mit einer Vorrichtung zum Berichtigen von Oberflächendaten |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US33387A (en) * | 1861-10-01 | Improvement in printing-presses | ||
GB1318701A (en) * | 1970-01-30 | 1973-05-31 | Rank Organisation Ltd | Methods of waveform analysis and apparatus therefor |
DE3532654A1 (de) * | 1985-09-13 | 1987-03-26 | Thyssen Industrie | Oberflaechenpruefeinrichtung mit konturnachform-fuehrungssystem |
-
1990
- 1990-11-05 DE DE4035076A patent/DE4035076A1/de not_active Withdrawn
-
1991
- 1991-11-05 WO PCT/EP1991/002088 patent/WO1992008946A2/de not_active Application Discontinuation
- 1991-11-05 EP EP91919134A patent/EP0509078A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH667835A5 (en) * | 1985-10-14 | 1988-11-15 | Elektroniktechnologie Get | Tactile sensor scanning workpiece surface - uses sensor pin in mechanical oscillation system with driver coil for intermittent contact with scanned surface |
EP0290647A1 (de) * | 1987-05-12 | 1988-11-17 | International Business Machines Corporation | Atomares Kräftemikroskop mit oscillierendem Quarz |
WO1989000672A1 (en) * | 1987-07-20 | 1989-01-26 | Krautkrämer Gmbh & Co. | Process for detecting a nearly pinpoint, essentially force-free contact of small area between a probe and a solid object, and contact detector |
EP0338083A1 (de) * | 1987-10-09 | 1989-10-25 | Hitachi, Ltd. | Rastertunnelmikroskop mit einer Vorrichtung zum Berichtigen von Oberflächendaten |
Non-Patent Citations (3)
Title |
---|
APPLIED PHYSICS LETTERS. Band 55, Nr. 22, 27. November 1989, (New York, US) P.C.D. Hobbs et al.: "Magnetic force microscopy with 25nm resolution", Seiten 2357-2359, siehe Seite 2357, linke Spalte, Abschnitt 2 - Seite 2358, rechte Spalte, Abschnitt 1; Figur 1 * |
IBM TECHNICAL DISCLOSURE BULLETIN, Band 32, Nr. 88, 1. Januar 1990 (New York, US) "Combined scanning tunneling and capacitance microscope", Seiten 266-267 * |
INTERNATIONAL JOURNAL OF ELECTRONICS, Band 68, Nr. 1, 1. Januar 1990 (London, GB) M. Ahmad: "Measurement of power system frequency deviation using a microprocessor", Seiten 161-164, siehe Abschnitt 2; Figur 1 * |
Also Published As
Publication number | Publication date |
---|---|
EP0509078A1 (de) | 1992-10-21 |
DE4035076A1 (de) | 1992-05-07 |
WO1992008946A3 (de) | 1992-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69010552T2 (de) | Atomkraftmikroskop. | |
EP0711406B1 (de) | Akustisches mikroskop | |
EP0627068B1 (de) | Tastelement fur koordinatenmesssysteme | |
DE3750406T2 (de) | Atomarer Kräftesensor mit interferometrischer Messung der Eigenschaften eines Datenträgers. | |
EP1482297A4 (de) | Rastersondenmikroskop sowie verfahren zur messung der oberflächenstruktur von präparaten | |
DE69828758T2 (de) | Verfahren zur Herstellung eines Magnetkraftbildes und Rastersondenmikroskop | |
DE10307561B4 (de) | Meßanordnung zur kombinierten Abtastung und Untersuchung von mikrotechnischen, elektrische Kontakte aufweisenden Bauelementen | |
DE3820518C1 (de) | ||
DE69434641T2 (de) | Elektrooptisches Messinstrument | |
EP0764261B1 (de) | Anordnung zur erfassung der topographie einer oberfläche | |
WO1992008101A1 (de) | Anordnung zum messen linearer abmessungen auf einer strukturierten oberfläche eines messobjektes | |
WO1992008946A2 (de) | Anordnung zum messen linearer abmessungen auf einer strukturierten oberfläche eines messobjektes | |
WO1992008102A1 (de) | Anordnung zum messen linearer abmessungen auf einer strukturierten oberfläche eines messobjektes | |
EP2218075B1 (de) | Vorrichtung und verfahren für ein raster-kraft mikroskop zur untersuchung und modifikation von oberflächeneigenschaften | |
EP0407835B1 (de) | Rasterkraftmikroskop | |
DE102017202455B4 (de) | MEMS- oder NEMS-basierter Sensor und Verfahren zum Betrieb eines solchen | |
WO2007019913A1 (de) | Vorrichtung zur schwingungsanregung eines einseitig in einem rasterkraftmikroskop befestigten federbalkens | |
EP2051069A2 (de) | Paramagnetischer Gassensensor sowie Verfahren zum Betrieb desselben | |
DE102006013588A1 (de) | Zweidimensinale Profilierung von Dotierungsprofilen einer Materialprobe mittels Rastersondenmikroskopie | |
DE19822286B4 (de) | Akustik-Mikroskop | |
DE3417826C2 (de) | ||
DE3820518C2 (de) | ||
DE964644C (de) | Laengenmessfuehler | |
WO1996012935A1 (de) | Dehnungsmesser zur messung der dehnung einkristallinen halbleitermaterials | |
WO2010105584A1 (de) | Rasterkraftmikroskop |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1991919134 Country of ref document: EP |
|
AK | Designated states |
Kind code of ref document: A3 Designated state(s): JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE |
|
WWP | Wipo information: published in national office |
Ref document number: 1991919134 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1991919134 Country of ref document: EP |