US20070215325A1 - Double sided heat sink with microchannel cooling - Google Patents
Double sided heat sink with microchannel cooling Download PDFInfo
- Publication number
- US20070215325A1 US20070215325A1 US11/693,255 US69325507A US2007215325A1 US 20070215325 A1 US20070215325 A1 US 20070215325A1 US 69325507 A US69325507 A US 69325507A US 2007215325 A1 US2007215325 A1 US 2007215325A1
- Authority
- US
- United States
- Prior art keywords
- manifolds
- layer
- supply
- exhaust
- coolant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Definitions
- the invention relates generally to an apparatus for cooling a heated surface and, more particularly, to a heat sink with microchannel cooling for semiconductor power devices.
- microchannel cooling One promising technology for high performance thermal management is microchannel cooling. In the 1980's, it was demonstrated as an effective means of cooling silicon integrated circuits, with designs demonstrating heat fluxes of up to 1000 W/cm 2 and surface temperature rise below 100° C.
- the apparatus includes a base plate defining a number of upper and lower supply manifolds and a number of upper and lower exhaust manifolds.
- the upper and lower supply manifolds are configured to receive a coolant, and the upper and lower exhaust manifolds are configured to exhaust the coolant.
- the upper (lower) supply and exhaust manifolds are interleaved.
- the apparatus further includes an upper substrate having an inner surface and an outer surface. The inner surface is coupled to the base plate and defines a number of microchannels configured to receive the coolant from the upper supply manifolds and to deliver the coolant to the upper exhaust manifolds.
- the microchannels are oriented substantially perpendicular to the upper supply and exhaust manifolds.
- the outer surface is in thermal contact with one of the heated surfaces.
- the apparatus further includes a lower substrate having an inner surface and an outer surface. The inner surface is coupled to the base plate and defines a number of microchannels configured to receive the coolant from the lower supply manifolds and to deliver the coolant to the lower exhaust manifolds.
- the microchannels are oriented substantially perpendicular to the lower supply and exhaust manifolds.
- the outer surface is in thermal contact with another of the heated surfaces.
- the apparatus further includes a supply plenum configured to supply the coolant to the upper and lower supply manifolds and an exhaust plenum configured to exhaust the coolant from the upper and lower exhaust manifolds. The supply plenum and exhaust plenum are oriented in a plane of base plate.
- the apparatus includes a base plate, as described above.
- the apparatus further includes an upper substrate comprising a top layer, an insulating layer and an inner layer.
- the inner layer defines a number of microchannels, described above.
- the insulating layer is disposed between the top and inner layers, the inner layer is coupled to the base plate, and the top layer is in thermal contact with one of the heated surfaces.
- the apparatus further includes a lower substrate comprising a bottom layer, a second insulating layer and a second inner layer.
- the second inner layer defines a number of microchannels, described above.
- the second insulating layer is disposed between the bottom and second inner layers, the second inner layer is coupled to the base plate, and the bottom layer is in thermal contact with another of the heated surfaces.
- the apparatus further includes a supply plenum and an exhaust plenum, as described above.
- the apparatus includes a base plate, as described above.
- the apparatus further includes an upper substrate that includes a top layer and an insulating microchannel layer.
- the insulating microchannel layer defines a number of microchannels, described above.
- the insulating microchannel layer is disposed between the top layer and the base plate, and the top layer is thermally coupled to one of the heated surfaces.
- the apparatus further includes a lower substrate that includes a bottom layer and an insulating microchannel layer.
- the insulating microchannel layer defines a number of microchannels, described above.
- the insulating microchannel layer is disposed between the bottom layer and the base plate, and the bottom layer is thermally coupled to another of the heated surfaces.
- the apparatus further includes a supply plenum and an exhaust plenum, as described above.
- FIG. 1 is a perspective view of an apparatus for cooling at least two heated surfaces
- FIG. 2 shows interleaved upper and lower supply and exhaust manifolds within a base plate of the apparatus of FIG. 1 ;
- FIG. 3 depicts, in cross-sectional view, an exemplary heat-sink with microchannels formed in the inner surfaces of the upper and lower substrates;
- FIG. 4 depicts, in cross-sectional view, an exemplary heat-sink with microchannels formed in insulating microchannel layers
- FIG. 5 depicts, in cross-sectional view, an exemplary heat-sink for use with low-voltage devices
- FIG. 6 illustrates in side view a double-sided heat sink apparatus for cooling multiple power devices
- FIG. 7 is a top view of the manifolds for the double-sided heat sink module of FIGS. 2 and 3 ;
- FIG. 8 is a side view of the manifolds for the double-sided heat sink module of FIG. 7 .
- the apparatus 10 includes a base plate 8 , which is shown in greater detail in FIG. 2 .
- the base plate 8 defines a number of upper supply manifolds 12 , a number of upper exhaust manifolds 14 , a number of lower supply manifolds 16 and a number of lower exhaust manifolds 18 .
- the upper and lower supply manifolds 12 , 16 are configured to receive a coolant, and the upper and lower exhaust manifolds 14 , 18 are configured to exhaust the coolant.
- the upper supply and exhaust manifolds 12 , 14 are interleaved, and the lower supply and exhaust manifolds 16 , 18 are interleaved.
- the supply manifolds 12 , 14 , 16 and 18 are oriented in a plane of the base plate 8 .
- the apparatus 10 further includes an upper substrate 20 having an inner surface 22 and an outer surface 24 .
- the inner surface 22 is coupled to the base plate 8 .
- the inner surface 22 defines a number of microchannels 26 configured to receive the coolant from the upper supply manifolds 12 and to deliver the coolant to the upper exhaust manifolds 14 .
- the microchannels 26 are oriented substantially perpendicular to the upper supply and exhaust manifolds 12 , 14 , as indicated in FIG. 1 , for example.
- the outer surface 24 is thermally coupled to one of the heated surfaces 40 , as indicated in FIG. 6 , for example.
- the apparatus 10 further includes a lower substrate 50 having an inner surface 52 and an outer surface 54 .
- the inner surface 52 is coupled to the base plate 8 .
- the inner surface 52 defines a number of microchannels 56 configured to receive the coolant from the lower supply manifolds 16 and to deliver the coolant to the lower exhaust manifolds 18 .
- the microchannels 56 are oriented substantially perpendicular to the lower supply and exhaust manifolds 16 , 18 .
- the outer surface 24 is thermally coupled to another of the heated surfaces 44 , as indicated in FIG. 6 , for example.
- the apparatus 10 further includes a supply plenum 30 configured to supply the coolant to the upper and lower supply manifolds 12 , 16 and an exhaust plenum 32 configured to exhaust the coolant from the upper and lower exhaust manifolds 14 , 18 .
- a supply plenum 30 configured to supply the coolant to the upper and lower supply manifolds 12 , 16
- an exhaust plenum 32 configured to exhaust the coolant from the upper and lower exhaust manifolds 14 , 18 .
- the supply plenum 30 and the exhaust plenum 32 are oriented in a plane of the base plate 8 .
- the microchannels 26 , 56 provide the link between the supply and exhaust manifolds. This provides the beneficial heat transfer performance of microchannels with a controlled pressure loss between the manifolds. Moreover, the use of two independent sets of supply and exhaust manifolds, one for cooling an upper power device(s) 80 and the other for cooling a lower power device(s) 82 , which are interdigitated, permits coolant to uniformly pass to the top and bottom of the module 10 . By attaching the microchannel substrates 20 , 50 to the top and bottom of the module, the heat exchanger is closed, permitting cooling on two surfaces using a heat exchanger volume previously used to cool only one surface.
- the heated surfaces correspond to power devices, non-limiting examples of which include Insulated Gate Bipolar Transistors (IGBT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET), Diodes, Metal Semiconductor Field Effect Transistors (MESFET), and High Electron Mobility Transistors (HEMT).
- IGBT Insulated Gate Bipolar Transistors
- MOSFET Metal Oxide Semiconductor Field Effect Transistors
- MESFET Metal Oxide Semiconductor Field Effect Transistors
- HEMT High Electron Mobility Transistors
- the phrase “oriented substantially perpendicular” should be understood to mean that the microchannels 26 ( 56 ) are oriented at angles of about ninety degrees plus/minus about thirty degrees (90+/ ⁇ 30 degrees) relative to the inlet and outlet manifolds 12 , 14 ( 16 , 18 ). According to a more particular embodiment, the microchannels 26 ( 56 ) are oriented at angles of about ninety degrees plus/minus about fifteen degrees (90+/ ⁇ 15 degrees) relative to the inlet and outlet manifolds 12 , 14 ( 16 , 18 ).
- coolants can be employed for apparatus 10 , and the invention is not limited to a particular coolant.
- Exemplary coolants include water, ethylene-glycol, oil, aircraft fuel and combinations thereof.
- the coolant is a single phase liquid.
- the coolant enters the manifolds 12 , 16 in base plate 8 and flows through microchannels 26 , 56 before returning through exhaust manifolds 14 , 18 . More particularly, coolant enters supply plenum 30 , whose fluid diameter exceeds that of the other channels in apparatus 10 , according to a particular embodiment, so that there is no significant pressure-drop in the plenum.
- the fluid diameter of supply plenum 30 exceeds that of the other channels by a ratio of about three-to-one (3:1) relative to the manifold hydraulic diameter.
- the coolant exits apparatus 10 through exhaust plenum 32 . It should be noted that this simple example assumes that all of the flow passes from one plenum to one manifold, so that the pressure scales at the ratio given above. In the illustrated embodiments of the present invention, however, there are multiple manifolds branching off of a single plenum. Accordingly, the increased number of channels partly tempers the increased pressure loss due to reduced flows in each channel.
- base plate 8 comprises a thermally conductive material.
- Exemplary materials include copper, Kovar, Molybdenum, titanium, ceramics and combinations thereof. The invention is not limited to specific base plate materials.
- microchannel 26 , 56 configurations are discussed and illustrated in U.S. patent application Ser. No. 10/998,707, referenced above.
- each of the upper and lower supply manifolds 12 , 16 is tapered such that a cross-section of the respective upper or lower supply manifold is larger at the supply plenum than at the exhaust plenum.
- each of the upper and lower supply manifolds 12 , 16 extends from the supply plenum 30 and is oriented substantially perpendicular to the supply plenum 30 .
- dimensional factors may be tailored to enhance thermal performance.
- the upper and lower supply manifolds 12 , 16 are characterized by a width in a range of about 0.5 mm to about 1 mm. According to a particular embodiment, the upper and lower supply manifolds 12 , 16 are about 0.5 mm wide.
- each of the upper and lower exhaust manifolds 14 , 18 is tapered such that a cross-section of the respective upper or lower exhaust manifold is larger at the exhaust plenum than at the supply plenum.
- each of the upper and lower exhaust manifolds 14 , 18 extends from the exhaust plenum 32 and is oriented substantially perpendicular to the exhaust plenum 32 .
- the upper and lower exhaust manifolds are characterized by a width in a range of about 0.5 mm to about 1 mm. According to a particular embodiment, the upper and lower exhaust manifolds are about 0.5 mm wide.
- FIG. 7 is a top view of the manifolds of FIG. 2 .
- the number of the upper supply and exhaust manifolds 12 , 14 differ by one.
- the example shown in FIG. 7 in which there are four upper supply manifolds 12 and five upper exhaust manifolds 14 , is merely illustrative.
- the number of the lower supply and exhaust manifolds 16 , 18 differ by one.
- the supply plenum 30 and the exhaust plenum 32 are substantially uniform in cross-section. In other embodiments, the supply plenum 30 and the exhaust plenum 32 are tapered.
- the coolant is selected from the group consisting of water, ethylene-glycol, oil, aircraft fuel and combinations thereof.
- the apparatus 10 accommodates cooling with single phase flow, such as impingement or cross-flow cooling.
- the apparatus 10 also accommodates cooling with two-phase flow, such as boiling or spray cooling.
- Dielectric fluids, such as FC-72, HFE7100 and conductive fluids such as water can be used as the coolant, depending upon the design of the jet and the packaging.
- the top and bottom side manifolds may need to be offset and staggered.
- the lengths of the individual microchannel links would be longer relative to the single-sided module described in U.S. patent application Ser. No. 10/998,707, referenced above, but would permit double-sided cooling.
- the upper and lower supply manifolds 12 , 16 are offset, and the upper and lower exhaust manifolds 14 , 18 are offset.
- the upper supply manifolds 12 are aligned with one of the lower exhaust and supply manifolds 18 , 16
- the upper exhaust manifolds 14 are aligned with the other of the lower exhaust and supply manifolds 18 , 16 .
- the upper and lower substrates 20 , 50 comprise at least one thermally conductive material and at least one electrically isolating material.
- substrates 20 , 50 are formed of either a direct bonded copper (DBC) or an active metal braze (AMB) structure.
- DBC and AMB refer to processes by which copper layers are directly bonded to a ceramic substrate.
- Exemplary ceramic bases include aluminum-oxide (AL 2 O 3 ), aluminum nitride (AIN), berilium oxide (BeO) and silicon nitride (Si 3 N 4 ).
- Both DBC and AMB are convenient structures for substrates 20 , 50 and the use of the same conductive material (in this case, copper) on both sides of the ceramic base provides thermal and mechanical stability.
- substrates 20 , 50 can be constructed from other materials, such as gold or silver.
- the substrates 20 , 50 can be attached to base plate 8 using any one of a number of techniques, including brazing, bonding, diffusion bonding, soldering, or pressure contact such as clamping. This provides a simple assembly process, which reduces the overall cost of the apparatus 10 .
- fluid passages are formed under the upper and lower heated surfaces 40 , 42 , enabling practical and cost-effective implementation of the microchannel cooling technology.
- the upper substrate 20 comprises a top layer 62 , an insulating layer 64 and an inner layer 66 .
- the microchannels 26 are formed in the inner layer 66
- the insulating layer 64 is disposed between the top layer 62 and the inner layer.
- the inner layer 66 is attached to the base plate 8
- the top layer is coupled to one of the heated surfaces 42 .
- the inner layer 66 is attached to the base plate 8 by brazing, bonding, diffusion bonding, soldering, pressure contact such as clamping or other attachment means.
- the heated surface 40 is coupled to the top layer 62 by solder 68 , as shown.
- microchannels 26 extend through the inner layer 66 .
- the microchannel depth is equal to the thickness of the inner layer 66 .
- CFD modeling results demonstrated improved performance for tall, high-aspect ratio microchannels, such as those shown in FIG. 3 .
- the microchannels in FIG. 3 would be about 0.3 mm tall.
- the microchannels 26 do not extend through the thickness of the inner layer 66 , thereby isolating the insulating layer 64 from the coolant, which flows through microchannels 26 .
- the ceramic layer 64 provides electrical isolation between the coolant and the power devices 80 mounted atop substrate 20 .
- top layer 62 and inner layer 66 are formed of copper (Cu)
- insulating layer 64 is a ceramic selected from the group consisting of AIN, Al 2 O 3 , Si 3 N , BeO or combinations thereof.
- the microchannels 26 are formed in the copper layer 66 on the underside of a substrate 20 .
- the lower substrate 50 comprises a bottom layer 72 , a second insulating layer 74 and a second inner layer 76 .
- the microchannels 56 are formed in the second inner layer 76
- the second insulating layer 74 is disposed between the bottom layer 72 and the second inner layer 76 .
- the second inner layer is attached to the base plate 8
- the bottom layer is coupled to another of the heated surfaces 44 .
- the lower substrate 50 is similar in construction, dimensions and materials to the upper substrate 50 .
- Reference number 82 indicates power devices mounted on substrate 50
- reference number 58 indicates a solder layer for coupling the heated surface 44 of the power device 82 to the bottom layer 72 .
- the upper substrate 20 includes a top layer 162 and an insulating microchannel layer 164 , and the microchannels 26 are formed in the insulating microchannel layer 162 .
- the insulating microchannel layer 164 is disposed between the top layer 162 and the base plate 8 , and the top layer 162 is coupled to one of the heated surfaces 42 of the power device(s) 80 .
- the microchannels 26 do not extend through insulating microchannel layer 164 , in order to isolate the coolant from the heated surface 42 of the power device(s) 80 .
- the remaining ceramic layer acts as a dielectric barrier between power devices 80 atop substrate 20 and the coolant.
- this embodiment also eliminates the thickness of material between the power devices 80 , 82 and the coolant, resulting in improved thermal performance.
- the lower substrate 50 includes a bottom layer 172 and an insulating microchannel layer 174 , and the microchannels 56 are formed in the insulating microchannel layer 174 .
- the insulating microchannel layer 174 is disposed between the bottom layer 172 and the base plate 8 , and the bottom layer 172 is coupled to another of the heated surfaces 44 of the power device(s) 82 .
- the construction and materials of the lower substrate 50 are similar to that of the upper substrate 20 .
- upper substrate 20 further includes a lower layer 166 disposed between and attached to the insulating microchannel layer 164 and the base plate 8 , as shown for example in FIG. 4 .
- lower substrate 50 further includes an upper layer 176 disposed between and attached to the insulating microchannel layer 174 and the base plate 8 , as shown for example in FIG. 4 .
- Exemplary materials for the lower layer 76 and upper layer 176 include copper.
- the upper substrate 20 includes an inner layer 28 , and microchannels 26 are formed in and extend partially through the inner layer 28 .
- the lower substrate 50 includes a second inner layer 38 , and microchannels 56 are formed in and extend partially through the second inner layer 38 .
- Exemplary materials for the inner layers 28 , 38 include but are not limited to copper, molybdenum, aluminum, composite materials such as aluminum silicon carbide (AlSiC) and aluminum graphite composites, for example the material sold under the tradename MetgrafTM, as well as alloys, such as cobalt-nickel ferrous alloys, for example the material sold under the tradename KovarTM.
- the microchannels 26 , 56 extend through the respective ones of the inner layers 28 , 38 , and the microchannels are less than about 200 ⁇ m wide and are separated by a number of gaps of less than about 200 ⁇ m.
- This embodiment is adapted for use with low voltage devices such as laser diodes, RF power devices and computer chips.
- the upper substrate 20 may further include a top layer 88 and a lower layer 90
- the lower substrate 50 may further include a bottom layer 92 and an upper layer 94 , as shown.
- the top layer 88 of the upper substrate and the bottom layer 92 of the lower substrate are formed of copper.
- Exemplary materials for the lower layer 90 of the upper substrate and for the upper layer 94 of the lower substrate include but are not limited to copper, molybdenum, aluminum, composite materials such as aluminum silicon carbide (AlSiC) and aluminum graphite composites, for example the material sold under the tradename MetgrafTM, as well as alloys, such as cobalt-nickel ferrous alloys, for example the material sold under the tradename KovarTM.
- ceramics or silicon may be used to form lower and upper layers 90 , 94 .
- Benefits of the double sided heat-sink module include reduction of weight, volume and number of heat sinks required. Other benefits of the invention include improved heat transfer due to increased surface areas and heat transfer coefficients for small, densely packed channels.
- the invention provides controlled pressure losses, due to the manifolding structure, for which the effective microchannel length is reduced to the distance between adjacent manifolds. Further, relatively uniform microchannel velocities are achieved by using a tapered manifold structure. Further, the invention enables simpler heat sink manufacturing processes, by reducing the number of bonds to the bond between the substrates and the base plate.
Abstract
An apparatus for cooling at least two heated surfaces includes a base plate defining multiple upper and lower supply manifolds and upper and lower exhaust manifolds. The upper and lower supply (exhaust) manifolds receive (exhaust) coolant, and the upper (lower) supply and exhaust manifolds are interleaved. The apparatus further includes an upper substrate having an inner surface and an outer surface. The inner surface is coupled to the base plate and defines multiple microchannels for receiving and exhausting coolant. The outer surface is in thermal contact with one of the heated surfaces. The apparatus further includes a lower substrate having an inner surface and an outer surface. The inner surface is coupled to the base plate and defines multiple microchannels for receiving and delivering coolant. The outer surface is in thermal contact with another of the heated surfaces. The apparatus further includes a supply plenum and an exhaust plenum oriented in a plane of the base plate.
Description
- This application is a continuation in part of U.S. patent application Ser. No. 10/998,707, Stevanovic et al., entitled “Heat sink with microchannel cooling for power devices,” which patent application is incorporated by reference herein in its entirety.
- The invention relates generally to an apparatus for cooling a heated surface and, more particularly, to a heat sink with microchannel cooling for semiconductor power devices.
- The development of higher-density power electronics has made it increasingly more difficult to cool power semiconductor devices. With modern silicon-based power devices capable of dissipating up to 500 W/cm2, there is a need for improved thermal anagement solutions. When device temperatures are limited to 50K increases, natural and forced-air cooling schemes can only handle heat fluxes up to about one (1) W/cm2. Conventional liquid cooling plates can achieve heat fluxes on the order of a twenty (20) W/cm2. Heat pipes, impingement sprays, and liquid boiling are capable of larger heat fluxes, but these techniques can lead to manufacturing difficulties and high cost.
- An additional problem encountered in conventional cooling of high heat flux power devices is non-uniform temperature distribution across the heated surface. This is due to the non-uniform cooling channel structure, as well as the temperature rise of the cooling fluid as it flows through long channels parallel to the heated surface.
- One promising technology for high performance thermal management is microchannel cooling. In the 1980's, it was demonstrated as an effective means of cooling silicon integrated circuits, with designs demonstrating heat fluxes of up to 1000 W/cm2 and surface temperature rise below 100° C.
- U.S. patent application Ser. No. 10/998,707, Stevanovic et al. discusses drawbacks associated with a number of known heat sink designs. As discussed in Stevanovic et al., desired heat sink properties include improved thermal performance, relatively simple assembly to reduce manufacturing cost, and scalability for accommodating small and large power devices as well as different numbers of power devices. In addition, it would be desirable for the apparatus to provide electrical isolation between high power devices and the coolant. Moreover, volume and weight are important limitations in many power electronics applications, so compact heat exchangers are desired.
- One aspect of the present invention resides in an apparatus for cooling at least two heated surfaces. The apparatus includes a base plate defining a number of upper and lower supply manifolds and a number of upper and lower exhaust manifolds. The upper and lower supply manifolds are configured to receive a coolant, and the upper and lower exhaust manifolds are configured to exhaust the coolant. The upper (lower) supply and exhaust manifolds are interleaved. The apparatus further includes an upper substrate having an inner surface and an outer surface. The inner surface is coupled to the base plate and defines a number of microchannels configured to receive the coolant from the upper supply manifolds and to deliver the coolant to the upper exhaust manifolds. The microchannels are oriented substantially perpendicular to the upper supply and exhaust manifolds. The outer surface is in thermal contact with one of the heated surfaces. The apparatus further includes a lower substrate having an inner surface and an outer surface. The inner surface is coupled to the base plate and defines a number of microchannels configured to receive the coolant from the lower supply manifolds and to deliver the coolant to the lower exhaust manifolds. The microchannels are oriented substantially perpendicular to the lower supply and exhaust manifolds. The outer surface is in thermal contact with another of the heated surfaces. The apparatus further includes a supply plenum configured to supply the coolant to the upper and lower supply manifolds and an exhaust plenum configured to exhaust the coolant from the upper and lower exhaust manifolds. The supply plenum and exhaust plenum are oriented in a plane of base plate.
- Another aspect of the present invention resides in an apparatus for cooling at least two heated surfaces. The apparatus includes a base plate, as described above. The apparatus further includes an upper substrate comprising a top layer, an insulating layer and an inner layer. The inner layer defines a number of microchannels, described above. The insulating layer is disposed between the top and inner layers, the inner layer is coupled to the base plate, and the top layer is in thermal contact with one of the heated surfaces. The apparatus further includes a lower substrate comprising a bottom layer, a second insulating layer and a second inner layer. The second inner layer defines a number of microchannels, described above. The second insulating layer is disposed between the bottom and second inner layers, the second inner layer is coupled to the base plate, and the bottom layer is in thermal contact with another of the heated surfaces. The apparatus further includes a supply plenum and an exhaust plenum, as described above.
- Yet another aspect of the present invention resides in an apparatus for cooling at least two heated surfaces. The apparatus includes a base plate, as described above. The apparatus further includes an upper substrate that includes a top layer and an insulating microchannel layer. The insulating microchannel layer defines a number of microchannels, described above. The insulating microchannel layer is disposed between the top layer and the base plate, and the top layer is thermally coupled to one of the heated surfaces. The apparatus further includes a lower substrate that includes a bottom layer and an insulating microchannel layer. The insulating microchannel layer defines a number of microchannels, described above. The insulating microchannel layer is disposed between the bottom layer and the base plate, and the bottom layer is thermally coupled to another of the heated surfaces. The apparatus further includes a supply plenum and an exhaust plenum, as described above.
- These and other features, aspects, and advantages of the present invention will become better understood when the following detailed description is read with reference to the accompanying drawings in which like characters represent like parts throughout the drawings, wherein:
-
FIG. 1 is a perspective view of an apparatus for cooling at least two heated surfaces; -
FIG. 2 shows interleaved upper and lower supply and exhaust manifolds within a base plate of the apparatus ofFIG. 1 ; -
FIG. 3 depicts, in cross-sectional view, an exemplary heat-sink with microchannels formed in the inner surfaces of the upper and lower substrates; -
FIG. 4 depicts, in cross-sectional view, an exemplary heat-sink with microchannels formed in insulating microchannel layers; -
FIG. 5 depicts, in cross-sectional view, an exemplary heat-sink for use with low-voltage devices; -
FIG. 6 illustrates in side view a double-sided heat sink apparatus for cooling multiple power devices; -
FIG. 7 is a top view of the manifolds for the double-sided heat sink module ofFIGS. 2 and 3 ; and -
FIG. 8 is a side view of the manifolds for the double-sided heat sink module ofFIG. 7 . - An apparatus 10 (for example a heat sink) for cooling at least two heated
surfaces 42, 44 is described first with reference toFIGS. 1, 2 and 6. As shown, for example in FIGS. 1 and. 6, theapparatus 10 includes abase plate 8, which is shown in greater detail inFIG. 2 . As shown, for example, inFIG. 2 , thebase plate 8 defines a number of upper supply manifolds 12, a number ofupper exhaust manifolds 14, a number oflower supply manifolds 16 and a number oflower exhaust manifolds 18. The upper andlower supply manifolds lower exhaust manifolds exhaust manifolds exhaust manifolds base plate 8. - As shown for example in
FIG. 6 , theapparatus 10 further includes anupper substrate 20 having aninner surface 22 and anouter surface 24. Theinner surface 22 is coupled to thebase plate 8. As indicated, for example inFIG. 3 , theinner surface 22 defines a number ofmicrochannels 26 configured to receive the coolant from the upper supply manifolds 12 and to deliver the coolant to the upper exhaust manifolds 14. Themicrochannels 26 are oriented substantially perpendicular to the upper supply andexhaust manifolds FIG. 1 , for example. Theouter surface 24 is thermally coupled to one of theheated surfaces 40, as indicated inFIG. 6 , for example. - As shown for example in
FIG. 6 , theapparatus 10 further includes alower substrate 50 having aninner surface 52 and anouter surface 54. Theinner surface 52 is coupled to thebase plate 8. As indicated, for example, inFIG. 3 , theinner surface 52 defines a number ofmicrochannels 56 configured to receive the coolant from thelower supply manifolds 16 and to deliver the coolant to thelower exhaust manifolds 18. Themicrochannels 56 are oriented substantially perpendicular to the lower supply andexhaust manifolds outer surface 24 is thermally coupled to another of the heated surfaces 44, as indicated inFIG. 6 , for example. - For the illustrated embodiment, the
apparatus 10 further includes asupply plenum 30 configured to supply the coolant to the upper andlower supply manifolds exhaust plenum 32 configured to exhaust the coolant from the upper andlower exhaust manifolds FIG. 2 , thesupply plenum 30 and theexhaust plenum 32 are oriented in a plane of thebase plate 8. - In operation, the
microchannels module 10. By attaching themicrochannel substrates - In non-limiting examples, the heated surfaces correspond to power devices, non-limiting examples of which include Insulated Gate Bipolar Transistors (IGBT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET), Diodes, Metal Semiconductor Field Effect Transistors (MESFET), and High Electron Mobility Transistors (HEMT). Those skilled in the art will recognize that these are examples of power devices and that the invention is by no means limited to these examples. Rather,
apparatus 10 may be used to cool these or other power devices. - As used herein the phrase “oriented substantially perpendicular” should be understood to mean that the microchannels 26 (56) are oriented at angles of about ninety degrees plus/minus about thirty degrees (90+/−30 degrees) relative to the inlet and outlet manifolds 12, 14 (16, 18). According to a more particular embodiment, the microchannels 26 (56) are oriented at angles of about ninety degrees plus/minus about fifteen degrees (90+/−15 degrees) relative to the inlet and outlet manifolds 12, 14 (16, 18).
- Many coolants can be employed for
apparatus 10, and the invention is not limited to a particular coolant. Exemplary coolants include water, ethylene-glycol, oil, aircraft fuel and combinations thereof. According to a particular embodiment, the coolant is a single phase liquid. In operation, the coolant enters themanifolds base plate 8 and flows throughmicrochannels exhaust manifolds supply plenum 30, whose fluid diameter exceeds that of the other channels inapparatus 10, according to a particular embodiment, so that there is no significant pressure-drop in the plenum. For example, the fluid diameter ofsupply plenum 30 exceeds that of the other channels by a ratio of about three-to-one (3:1) relative to the manifold hydraulic diameter. For this example, the difference in the pressure drop for a single plenum channel (of equal length) would be of the order of 1/(3ˆ5)=1/243 of the loss of the loss in the manifold. The coolant exitsapparatus 10 throughexhaust plenum 32. It should be noted that this simple example assumes that all of the flow passes from one plenum to one manifold, so that the pressure scales at the ratio given above. In the illustrated embodiments of the present invention, however, there are multiple manifolds branching off of a single plenum. Accordingly, the increased number of channels partly tempers the increased pressure loss due to reduced flows in each channel. - According to a particular embodiment,
base plate 8 comprises a thermally conductive material. Exemplary materials include copper, Kovar, Molybdenum, titanium, ceramics and combinations thereof. The invention is not limited to specific base plate materials. -
Exemplary microchannel - The inlet and outlet configuration for the
base plate 8 affects the heat transfer effectiveness of theapparatus 10. For the exemplary arrangement shown inFIG. 8 , each of the upper andlower supply manifolds FIGS. 2 and 8 , each of the upper andlower supply manifolds supply plenum 30 and is oriented substantially perpendicular to thesupply plenum 30. As discussed in U.S. patent application Ser. No. 10/998,707, referenced above, dimensional factors may be tailored to enhance thermal performance. For example, in particular embodiments, the upper andlower supply manifolds lower supply manifolds - For the exemplary arrangement shown in
FIG. 8 , each of the upper andlower exhaust manifolds FIGS. 2 and 8 , each of the upper andlower exhaust manifolds exhaust plenum 32 and is oriented substantially perpendicular to theexhaust plenum 32. In particular embodiments, the upper and lower exhaust manifolds are characterized by a width in a range of about 0.5 mm to about 1 mm. According to a particular embodiment, the upper and lower exhaust manifolds are about 0.5 mm wide. -
FIG. 7 is a top view of the manifolds ofFIG. 2 . For the exemplary embodiment illustrated inFIG. 7 , the number of the upper supply andexhaust manifolds FIG. 7 , in which there are four upper supply manifolds 12 and fiveupper exhaust manifolds 14, is merely illustrative. Similarly, for certain embodiments, the number of the lower supply andexhaust manifolds supply plenum 30 and theexhaust plenum 32 are substantially uniform in cross-section. In other embodiments, thesupply plenum 30 and theexhaust plenum 32 are tapered. In non-limiting examples, the coolant is selected from the group consisting of water, ethylene-glycol, oil, aircraft fuel and combinations thereof. Theapparatus 10 accommodates cooling with single phase flow, such as impingement or cross-flow cooling. Theapparatus 10 also accommodates cooling with two-phase flow, such as boiling or spray cooling. Dielectric fluids, such as FC-72, HFE7100 and conductive fluids such as water can be used as the coolant, depending upon the design of the jet and the packaging. - Depending on the thickness of the
heat sink module 10, the top and bottom side manifolds may need to be offset and staggered. In which case, the lengths of the individual microchannel links would be longer relative to the single-sided module described in U.S. patent application Ser. No. 10/998,707, referenced above, but would permit double-sided cooling. For the illustrated embodiment ofFIGS. 1, 2 and 7, the upper andlower supply manifolds lower exhaust manifolds supply manifolds upper exhaust manifolds 14 are aligned with the other of the lower exhaust andsupply manifolds - For the exemplary embodiments of
FIGS. 3 and 4 , the upper andlower substrates substrates substrates substrates substrates base plate 8 using any one of a number of techniques, including brazing, bonding, diffusion bonding, soldering, or pressure contact such as clamping. This provides a simple assembly process, which reduces the overall cost of theapparatus 10. Moreover, by attaching thesubstrates base plate 8, fluid passages are formed under the upper and lowerheated surfaces - For the exemplary embodiment illustrated in
FIG. 3 , theupper substrate 20 comprises atop layer 62, an insulatinglayer 64 and aninner layer 66. For this embodiment, themicrochannels 26 are formed in theinner layer 66, and the insulatinglayer 64 is disposed between thetop layer 62 and the inner layer. Theinner layer 66 is attached to thebase plate 8, and the top layer is coupled to one of the heated surfaces 42. For example, theinner layer 66 is attached to thebase plate 8 by brazing, bonding, diffusion bonding, soldering, pressure contact such as clamping or other attachment means. For the exemplary embodiment ofFIG. 3 , theheated surface 40 is coupled to thetop layer 62 bysolder 68, as shown. For the exemplary embodiment depicted inFIG. 3 ,microchannels 26 extend through theinner layer 66. In other words, the microchannel depth is equal to the thickness of theinner layer 66. CFD modeling results demonstrated improved performance for tall, high-aspect ratio microchannels, such as those shown inFIG. 3 . For a typical thickness of the inner layer of a substrate, the microchannels inFIG. 3 would be about 0.3 mm tall. Of course other implementations are possible, and for an alternative embodiment (not shown) themicrochannels 26 do not extend through the thickness of theinner layer 66, thereby isolating the insulatinglayer 64 from the coolant, which flows throughmicrochannels 26. Beneficially, theceramic layer 64 provides electrical isolation between the coolant and thepower devices 80 mounted atopsubstrate 20. According to a particular embodiment,top layer 62 andinner layer 66 are formed of copper (Cu), and insulatinglayer 64 is a ceramic selected from the group consisting of AIN, Al2O3, Si3N , BeO or combinations thereof. According to a more particular embodiment, themicrochannels 26 are formed in thecopper layer 66 on the underside of asubstrate 20. - For the lower portion of the arrangement shown in
FIG. 3 , thelower substrate 50 comprises abottom layer 72, a second insulatinglayer 74 and a secondinner layer 76. For this embodiment, themicrochannels 56 are formed in the secondinner layer 76, and the second insulatinglayer 74 is disposed between thebottom layer 72 and the secondinner layer 76. The second inner layer is attached to thebase plate 8, and the bottom layer is coupled to another of the heated surfaces 44. For the illustrated embodiment, thelower substrate 50 is similar in construction, dimensions and materials to theupper substrate 50.Reference number 82 indicates power devices mounted onsubstrate 50, and reference number 58 indicates a solder layer for coupling the heated surface 44 of thepower device 82 to thebottom layer 72. - Another exemplary embodiment is shown in
FIG. 4 . For this embodiment, theupper substrate 20 includes atop layer 162 and an insulatingmicrochannel layer 164, and themicrochannels 26 are formed in the insulatingmicrochannel layer 162. The insulatingmicrochannel layer 164 is disposed between thetop layer 162 and thebase plate 8, and thetop layer 162 is coupled to one of theheated surfaces 42 of the power device(s) 80. As shown inFIG. 4 , themicrochannels 26 do not extend through insulatingmicrochannel layer 164, in order to isolate the coolant from theheated surface 42 of the power device(s) 80. More particularly, the remaining ceramic layer acts as a dielectric barrier betweenpower devices 80 atopsubstrate 20 and the coolant. Beneficially, while maintaining electrical isolation, this embodiment also eliminates the thickness of material between thepower devices - For the lower portion of the arrangement shown in
FIG. 4 , thelower substrate 50 includes abottom layer 172 and an insulatingmicrochannel layer 174, and themicrochannels 56 are formed in the insulatingmicrochannel layer 174. As shown, the insulatingmicrochannel layer 174 is disposed between thebottom layer 172 and thebase plate 8, and thebottom layer 172 is coupled to another of the heated surfaces 44 of the power device(s) 82. For the illustrated embodiment, the construction and materials of thelower substrate 50 are similar to that of theupper substrate 20. According to a more particular embodiment,upper substrate 20 further includes alower layer 166 disposed between and attached to the insulatingmicrochannel layer 164 and thebase plate 8, as shown for example inFIG. 4 . For this particular embodiment,lower substrate 50 further includes an upper layer 176 disposed between and attached to the insulatingmicrochannel layer 174 and thebase plate 8, as shown for example inFIG. 4 . Exemplary materials for thelower layer 76 and upper layer 176 include copper. - Another embodiment is shown in
FIG. 5 . For this embodiment, theupper substrate 20 includes aninner layer 28, and microchannels 26 are formed in and extend partially through theinner layer 28. As shown inFIG. 5 , thelower substrate 50 includes a secondinner layer 38, and microchannels 56 are formed in and extend partially through the secondinner layer 38. Exemplary materials for theinner layers inner layers microchannels inner layers upper substrate 20 may further include atop layer 88 and alower layer 90, and thelower substrate 50 may further include abottom layer 92 and anupper layer 94, as shown. In one non-limiting example, thetop layer 88 of the upper substrate and thebottom layer 92 of the lower substrate are formed of copper. Exemplary materials for thelower layer 90 of the upper substrate and for theupper layer 94 of the lower substrate include but are not limited to copper, molybdenum, aluminum, composite materials such as aluminum silicon carbide (AlSiC) and aluminum graphite composites, for example the material sold under the tradename Metgraf™, as well as alloys, such as cobalt-nickel ferrous alloys, for example the material sold under the tradename Kovar™. In other applications, ceramics or silicon may be used to form lower andupper layers - Benefits of the double sided heat-sink module include reduction of weight, volume and number of heat sinks required. Other benefits of the invention include improved heat transfer due to increased surface areas and heat transfer coefficients for small, densely packed channels. In addition, the invention provides controlled pressure losses, due to the manifolding structure, for which the effective microchannel length is reduced to the distance between adjacent manifolds. Further, relatively uniform microchannel velocities are achieved by using a tapered manifold structure. Further, the invention enables simpler heat sink manufacturing processes, by reducing the number of bonds to the bond between the substrates and the base plate.
- Although only certain features of the invention have been illustrated and described herein, many modifications and changes will occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
Claims (23)
1. An apparatus for cooling at least two heated surfaces, said apparatus comprising:
a base plate defining a plurality of upper supply manifolds, a plurality of upper exhaust manifolds, a plurality of lower supply manifolds and a plurality of lower exhaust manifolds, wherein said upper and lower supply manifolds are configured to receive a coolant, wherein said upper and lower exhaust manifolds are configured to exhaust the coolant, wherein said upper supply and exhaust manifolds are interleaved, and wherein said lower supply and exhaust manifolds are interleaved;
an upper substrate having an inner surface and an outer surface, wherein said inner surface is coupled to said base plate, wherein said inner surface defines a plurality of microchannels configured to receive the coolant from said upper supply manifolds and to deliver the coolant to said upper exhaust manifolds, wherein said microchannels are oriented substantially perpendicular to said upper supply and exhaust manifolds, and wherein said outer surface is in thermal contact with one of the heated surfaces;
a lower substrate having an inner surface and an outer surface, wherein said inner surface is coupled to said base plate, wherein said inner surface defines a plurality of microchannels configured to receive the coolant from said lower supply manifolds and to deliver the coolant to said lower exhaust manifolds, wherein said microchannels are oriented substantially perpendicular to said lower supply and exhaust manifolds, and wherein said outer surface is in thermal contact with another of the heated surfaces;
a supply plenum configured to supply the coolant to said upper and lower supply manifolds; and
an exhaust plenum configured to exhaust the coolant from said upper and lower exhaust manifolds, wherein said supply plenum and said exhaust plenum are oriented in a plane of said base plate.
2. The apparatus of claim 1 , wherein said microchannels are about 100 μm wide, and wherein said gaps are about 100 μm.
3. The apparatus of claim 1 , wherein each of said upper and lower supply manifolds is tapered such that a cross-section of the respective upper or lower supply manifold is larger at said supply plenum than at said exhaust plenum.
4. The apparatus of claim 3 , wherein each of said upper and lower supply manifolds extends from said supply plenum and is oriented substantially perpendicular to said supply plenum.
5. The apparatus of claim 1 , wherein each of said upper and lower exhaust manifolds is tapered such that a cross-section of the respective upper or lower exhaust manifold is larger at said exhaust plenum than at said supply plenum.
6. The apparatus of claim 5 , wherein each of said upper and lower exhaust manifolds extends from said exhaust plenum and is oriented substantially perpendicular to said exhaust plenum.
7. The apparatus of claim 1 , wherein a number of said upper supply manifolds and a number of said upper exhaust manifolds differ by one, and wherein a number of said lower supply manifolds and a number of said lower exhaust manifolds differ by one.
8. The apparatus of claim 1 , wherein said upper supply manifolds are aligned with one of said lower exhaust and supply manifolds, and wherein said upper exhaust manifolds are aligned with the other of said lower exhaust and supply manifolds.
9. The apparatus of claim 1 , wherein said upper and lower supply manifolds are offset, and wherein said upper and lower exhaust manifolds are offset.
10. The apparatus of claim 1 , wherein said base plate comprises a thermally conductive material.
11. The apparatus of claim 10 , wherein each of said upper and lower substrates comprises at least one thermally conductive material.
12. The apparatus of claim 11 , wherein each of said upper and lower substrates comprises at least one electrically isolating material.
13. The apparatus of claim 11 , wherein at least one of said upper and lower substrates comprises a direct bonded copper structure.
14. The apparatus of claim 11 , wherein at least one of said upper and lower substrates comprises an active metal braze (AMB) structure.
15. The apparatus of claim 1 , wherein said upper substrate comprises a top layer, an insulating layer and an inner layer, wherein said microchannels are formed in said inner layer, wherein said insulating layer is disposed between said top layer and said inner layer, wherein said inner layer is attached to said base plate, and wherein said top layer is coupled to one of the heated surfaces, and
wherein said lower substrate comprises a bottom layer, a second insulating layer and a second inner layer, wherein said microchannels are formed in said second inner layer, wherein said second insulating layer is disposed between said bottom layer and said second inner layer, wherein said second inner layer is attached to said base plate, and wherein said bottom layer is coupled to another of the heated surfaces.
16. The apparatus of claim 1 , wherein said upper substrate comprises a top layer and an insulating microchannel layer, wherein said microchannels are formed in said insulating microchannel layer, wherein said insulating microchannel layer is disposed between said top layer and said base plate, and wherein said top layer is coupled to one of the heated surfaces,
wherein said lower substrate comprises a bottom layer and an insulating microchannel layer, wherein said microchannels are formed in said insulating microchannel layer, wherein said insulating microchannel layer is disposed between said bottom layer and said base plate, and wherein said bottom layer is coupled to another of the heated surfaces.
17. The apparatus of claim 1 , wherein said upper substrate comprises an inner layer, wherein said microchannels are formed in and extend partially through said inner layer,
wherein said lower substrate comprises a second inner layer, wherein said microchannels are formed in and extend partially through said inner layer.
18. The heat sink of claim 17 , wherein said microchannels extend through the respective ones of said inner layers, and wherein said microchannels are less than about 200 μm wide and are separated by a plurality of gaps of less than about 200 μm.
19. An apparatus for cooling at least two heated surfaces, said apparatus comprising:
a base plate defining a plurality of upper supply manifolds, a plurality of upper exhaust manifolds, a plurality of lower supply manifolds and a plurality of lower exhaust manifolds, wherein said upper and lower supply manifolds are configured to receive a coolant, wherein said upper and lower exhaust manifolds are configured to exhaust the coolant, wherein said upper supply and exhaust manifolds are interleaved, and wherein said lower supply and exhaust manifolds are interleaved;
an upper substrate comprising a top layer, an insulating layer and an inner layer, wherein said inner layer defines a plurality of microchannels configured to receive the coolant from said upper supply manifolds and to deliver the coolant to said upper exhaust manifolds, wherein said microchannels are oriented substantially perpendicular to said upper supply and exhaust manifolds, wherein said insulating layer is disposed between said top layer and said inner layer, wherein said inner layer is coupled to said base plate, and wherein said top layer is in thermal contact with one of the heated surfaces;
a lower substrate comprising a bottom layer, a second insulating layer and a second inner layer, wherein said second inner layer defines a plurality of microchannels configured to receive the coolant from said lower supply manifolds and to deliver the coolant to said lower exhaust manifolds, wherein said microchannels are oriented substantially perpendicular to said lower supply and exhaust manifolds, wherein said second insulating layer is disposed between said bottom layer and said second inner layer, wherein said second inner layer is coupled to said base plate, and wherein said bottom layer is in thermal contact with another of the heated surfaces;
a supply plenum configured to supply the coolant to said upper and lower supply manifolds; and
an exhaust plenum configured to exhaust the coolant from said upper and lower exhaust manifolds, wherein said supply plenum and said exhaust plenum are oriented in a plane of said base plate.
20. The apparatus of claim 19 , wherein said microchannels extend through respective ones of said inner layers.
21. The apparatus of claim 19 , wherein said top and bottom layers and said inner layers comprise copper, and wherein said insulating layers comprise a ceramic.
22. An apparatus for cooling at least two heated surfaces, said apparatus comprising:
a base plate defining a plurality of upper supply manifolds, a plurality of upper exhaust manifolds, a plurality of lower supply manifolds and a plurality of lower exhaust manifolds, wherein said upper and lower supply manifolds are configured to receive a coolant, wherein said upper and lower exhaust manifolds are configured to exhaust the coolant, wherein said upper supply and exhaust manifolds are interleaved, and wherein said lower supply and exhaust manifolds are interleaved;
an upper substrate comprising a top layer and an insulating microchannel layer, wherein said insulating microchannel layer defines a plurality of microchannels configured to receive the coolant from said upper supply manifolds and to deliver the coolant to said upper exhaust manifolds, wherein said microchannels are oriented substantially perpendicular to said upper supply and exhaust manifolds, wherein said insulating microchannel layer is disposed between said top layer and said base plate, and wherein said top layer is thermally coupled to one of the heated surfaces,
a lower substrate comprising a bottom layer and an insulating microchannel layer, wherein said insulating microchannel layer defines a plurality of microchannels configured to receive the coolant from said lower supply manifolds and to deliver the coolant to said lower exhaust manifolds, wherein said microchannels are oriented substantially perpendicular to said lower supply and exhaust manifolds, wherein said insulating microchannel layer is disposed between said bottom layer and said base plate, and wherein said bottom layer is thermally coupled to another of the heated surfaces;
a supply plenum configured to supply the coolant to said upper and lower supply manifolds; and
an exhaust plenum configured to exhaust the coolant from said upper and lower exhaust manifolds, wherein said supply plenum and said exhaust plenum are oriented in a plane of said base plate.
23. The apparatus of claim 22 , wherein said upper substrate further comprises a lower layer disposed between and attached to said insulating microchannel layer and said base plate, and
wherein said lower substrate further comprises an upper layer disposed between and attached to said insulating microchannel layer and said base plate.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/693,255 US20070215325A1 (en) | 2004-11-24 | 2007-03-29 | Double sided heat sink with microchannel cooling |
US12/942,232 US20110087320A1 (en) | 2001-11-28 | 2010-11-09 | Devices, Systems, and Methods for Prosthesis Delivery and Implantation, Including a Prosthesis Assembly |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/998,707 US7353859B2 (en) | 2004-11-24 | 2004-11-24 | Heat sink with microchannel cooling for power devices |
US11/693,255 US20070215325A1 (en) | 2004-11-24 | 2007-03-29 | Double sided heat sink with microchannel cooling |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/693,255 Division US6929661B2 (en) | 2001-11-28 | 2003-10-24 | Multi-lumen prosthesis systems and methods |
US10/998,707 Continuation-In-Part US7353859B2 (en) | 2004-11-24 | 2004-11-24 | Heat sink with microchannel cooling for power devices |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/786,465 Continuation-In-Part US8231639B2 (en) | 2001-11-28 | 2004-02-25 | Systems and methods for attaching a prosthesis within a body lumen or hollow organ |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070215325A1 true US20070215325A1 (en) | 2007-09-20 |
Family
ID=36459885
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/998,707 Expired - Fee Related US7353859B2 (en) | 2004-11-24 | 2004-11-24 | Heat sink with microchannel cooling for power devices |
US11/693,255 Abandoned US20070215325A1 (en) | 2001-11-28 | 2007-03-29 | Double sided heat sink with microchannel cooling |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/998,707 Expired - Fee Related US7353859B2 (en) | 2004-11-24 | 2004-11-24 | Heat sink with microchannel cooling for power devices |
Country Status (8)
Country | Link |
---|---|
US (2) | US7353859B2 (en) |
EP (1) | EP1825730B1 (en) |
JP (1) | JP5052350B2 (en) |
CN (1) | CN100559926C (en) |
CA (1) | CA2589183C (en) |
DE (1) | DE602005025923D1 (en) |
IL (1) | IL183311A0 (en) |
WO (1) | WO2007001456A1 (en) |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100038774A1 (en) * | 2008-08-18 | 2010-02-18 | General Electric Company | Advanced and integrated cooling for press-packages |
US20100038058A1 (en) * | 2008-08-18 | 2010-02-18 | General Electric Company | Heat sink and cooling and packaging stack for press-packages |
WO2010036442A1 (en) * | 2008-07-21 | 2010-04-01 | The Regents Of The University Of California | Titanium-based thermal ground plane |
US20100157526A1 (en) * | 2008-12-22 | 2010-06-24 | General Electric Company | Low cost anufacturing of micro-channel heatsink |
US20100175857A1 (en) * | 2009-01-15 | 2010-07-15 | General Electric Company | Millichannel heat sink, and stack and apparatus using the same |
EP2222150A1 (en) * | 2009-02-24 | 2010-08-25 | Jungheinrich Aktiengesellschaft | Circuit board with cooling unit |
US20100226093A1 (en) * | 2009-03-09 | 2010-09-09 | General Electric Company | Methods for making millichannel substrate, and cooling device and apparatus using the substrate |
US20100230800A1 (en) * | 2009-03-13 | 2010-09-16 | Richard Alfred Beaupre | Double side cooled power module with power overlay |
US20100315782A1 (en) * | 2008-08-18 | 2010-12-16 | General Electric Company | Integral heat sink with spiral manifolds |
US20110226445A1 (en) * | 2010-03-22 | 2011-09-22 | Brand Joseph H | Heat exchanger |
US20110317368A1 (en) * | 2010-06-29 | 2011-12-29 | General Electric Company | Heat sinks with c-shaped manifolds and millichannel cooling |
US20120327603A1 (en) * | 2011-06-24 | 2012-12-27 | General Electric Company | Cooling device for a power module, and a related method thereof |
US20130050944A1 (en) * | 2011-08-22 | 2013-02-28 | Mark Eugene Shepard | High performance liquid cooled heatsink for igbt modules |
WO2014144535A1 (en) * | 2013-03-15 | 2014-09-18 | Mtpv Power Corporation | Microchannel heat sink for micro-gap thermophotovoltaic device |
US20150180311A1 (en) * | 2013-12-20 | 2015-06-25 | Industrial Technology Research Institute | Motor controller with cooling function and cooling method for cooling a motor controller |
US9337121B2 (en) | 2014-01-09 | 2016-05-10 | Electronics And Telecommunications Research Institute | Semiconductor device and method of fabricating the same |
WO2016089385A1 (en) * | 2014-12-03 | 2016-06-09 | Ge Intelligent Platforms, Inc. | Combined energy dissipation apparatus and method |
US9437523B2 (en) | 2014-05-30 | 2016-09-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Two-sided jet impingement assemblies and power electronics modules comprising the same |
US9484284B1 (en) | 2016-03-16 | 2016-11-01 | Northrop Grumman Systems Corporation | Microfluidic impingement jet cooled embedded diamond GaN HEMT |
US9613884B2 (en) | 2015-03-03 | 2017-04-04 | Electronics And Telecommunications Research Institute | Semiconductor device |
US10574175B2 (en) | 2016-02-08 | 2020-02-25 | Mtpv Power Corporation | Energy conversion system with radiative and transmissive emitter |
US10622280B2 (en) * | 2018-02-14 | 2020-04-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
CN111315182A (en) * | 2018-12-12 | 2020-06-19 | 台达电子工业股份有限公司 | Integrated electronic device |
US10822096B2 (en) | 2018-03-30 | 2020-11-03 | Ge Aviation Systems Llc | Avionics cooling module |
US10928141B2 (en) | 2017-03-06 | 2021-02-23 | Dana Canada Corporation | Heat exchanger for cooling multiple layers of electronic modules |
US11310935B2 (en) | 2017-05-17 | 2022-04-19 | Huawei Technologies Co., Ltd. | Heat dissipator and communications device |
US20220418159A1 (en) * | 2021-06-24 | 2022-12-29 | Baidu Usa Llc | Multi-system cooling device for high powered integrated circuits |
WO2023076093A1 (en) * | 2021-10-25 | 2023-05-04 | Lam Research Corporation | Microchannel assembly cooled power circuits for power boxes of substrate processing systems |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7327024B2 (en) * | 2004-11-24 | 2008-02-05 | General Electric Company | Power module, and phase leg assembly |
US7190581B1 (en) * | 2005-01-11 | 2007-03-13 | Midwest Research Institute | Low thermal resistance power module assembly |
CN100555613C (en) * | 2005-03-22 | 2009-10-28 | 布哈拉特强电有限公司 | The selectively grooved cold drawing that is used for the electronic unit cooling |
US7331378B2 (en) * | 2006-01-17 | 2008-02-19 | Delphi Technologies, Inc. | Microchannel heat sink |
US7515415B2 (en) * | 2006-02-02 | 2009-04-07 | Sun Microsystems, Inc. | Embedded microchannel cooling package for a central processor unit |
US20070259523A1 (en) * | 2006-05-04 | 2007-11-08 | Yechuri Sitaramarao S | Method of fabricating high speed integrated circuits |
KR100737162B1 (en) * | 2006-08-11 | 2007-07-06 | 동부일렉트로닉스 주식회사 | Semiconductor device and fabricating method thereof |
US7762314B2 (en) * | 2007-04-24 | 2010-07-27 | International Business Machines Corporation | Cooling apparatus, cooled electronic module and methods of fabrication employing a manifold structure with interleaved coolant inlet and outlet passageways |
US8479806B2 (en) * | 2007-11-30 | 2013-07-09 | University Of Hawaii | Two-phase cross-connected micro-channel heat sink |
US20090151907A1 (en) * | 2007-12-13 | 2009-06-18 | International Business Machines Corporation | Compliant thermal interface design and assembly method |
US20110056668A1 (en) * | 2008-04-29 | 2011-03-10 | Carrier Corporation | Modular heat exchanger |
US8302671B2 (en) * | 2008-04-29 | 2012-11-06 | Raytheon Company | Scaleable parallel flow micro-channel heat exchanger and method for manufacturing same |
US8472193B2 (en) * | 2008-07-04 | 2013-06-25 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device |
KR20120042713A (en) | 2009-02-04 | 2012-05-03 | 퍼듀 리서치 파운데이션 | Coiled and microchannel heat exchangers for metal hydride storage systems |
KR20110125231A (en) | 2009-02-04 | 2011-11-18 | 퍼듀 리서치 파운데이션 | Finned heat exchangers for metal hydride storage systems |
US7929306B2 (en) * | 2009-03-31 | 2011-04-19 | Alcatel-Lucent Usa Inc. | Circuit pack cooling solution |
US20100302734A1 (en) * | 2009-05-29 | 2010-12-02 | General Electric Company | Heatsink and method of fabricating same |
US8582298B2 (en) * | 2009-06-22 | 2013-11-12 | Xyber Technologies | Passive cooling enclosure system and method for electronics devices |
CN101599471B (en) * | 2009-06-29 | 2012-05-23 | 浙江工业大学 | Cooling structure of power device and manufacturing method thereof |
US8345720B2 (en) | 2009-07-28 | 2013-01-01 | Northrop Grumman Systems Corp. | Laser diode ceramic cooler having circuitry for control and feedback of laser diode performance |
US20110024150A1 (en) * | 2009-07-31 | 2011-02-03 | General Electric Company | Cooling system and method for current carrying conductor |
US9157581B2 (en) | 2009-10-05 | 2015-10-13 | Lighting Science Group Corporation | Low profile luminaire with light guide and associated systems and methods |
US9581756B2 (en) | 2009-10-05 | 2017-02-28 | Lighting Science Group Corporation | Light guide for low profile luminaire |
US8522569B2 (en) * | 2009-10-27 | 2013-09-03 | Industrial Idea Partners, Inc. | Utilization of data center waste heat for heat driven engine |
CN102076203B (en) * | 2009-11-24 | 2015-11-25 | 通用电气公司 | For the radiator of press pack and cooling and packaging laminate |
EP2395549B1 (en) * | 2010-06-10 | 2014-06-25 | Imec | Device for cooling integrated circuits |
US8743023B2 (en) | 2010-07-23 | 2014-06-03 | Biological Illumination, Llc | System for generating non-homogenous biologically-adjusted light and associated methods |
US9532423B2 (en) | 2010-07-23 | 2016-12-27 | Lighting Science Group Corporation | System and methods for operating a lighting device |
US9024536B2 (en) | 2011-12-05 | 2015-05-05 | Biological Illumination, Llc | Tunable LED lamp for producing biologically-adjusted light and associated methods |
US8465167B2 (en) | 2011-09-16 | 2013-06-18 | Lighting Science Group Corporation | Color conversion occlusion and associated methods |
US8841864B2 (en) | 2011-12-05 | 2014-09-23 | Biological Illumination, Llc | Tunable LED lamp for producing biologically-adjusted light |
US9681522B2 (en) | 2012-05-06 | 2017-06-13 | Lighting Science Group Corporation | Adaptive light system and associated methods |
US8760370B2 (en) | 2011-05-15 | 2014-06-24 | Lighting Science Group Corporation | System for generating non-homogenous light and associated methods |
US9827439B2 (en) | 2010-07-23 | 2017-11-28 | Biological Illumination, Llc | System for dynamically adjusting circadian rhythm responsive to scheduled events and associated methods |
US8686641B2 (en) | 2011-12-05 | 2014-04-01 | Biological Illumination, Llc | Tunable LED lamp for producing biologically-adjusted light |
US9252069B2 (en) | 2010-08-31 | 2016-02-02 | Teledyne Scientific & Imaging, Llc | High power module cooling system |
US8514901B2 (en) * | 2010-11-02 | 2013-08-20 | Gerald Ho Kim | Silicon-based cooling package for laser gain medium |
US8401231B2 (en) | 2010-11-09 | 2013-03-19 | Biological Illumination, Llc | Sustainable outdoor lighting system for use in environmentally photo-sensitive area |
US8384984B2 (en) | 2011-03-28 | 2013-02-26 | Lighting Science Group Corporation | MEMS wavelength converting lighting device and associated methods |
US9360202B2 (en) | 2011-05-13 | 2016-06-07 | Lighting Science Group Corporation | System for actively cooling an LED filament and associated methods |
US9151482B2 (en) | 2011-05-13 | 2015-10-06 | Lighting Science Group Corporation | Sealed electrical device with cooling system |
US8608348B2 (en) | 2011-05-13 | 2013-12-17 | Lighting Science Group Corporation | Sealed electrical device with cooling system and associated methods |
US8754832B2 (en) | 2011-05-15 | 2014-06-17 | Lighting Science Group Corporation | Lighting system for accenting regions of a layer and associated methods |
US8901850B2 (en) | 2012-05-06 | 2014-12-02 | Lighting Science Group Corporation | Adaptive anti-glare light system and associated methods |
US9173269B2 (en) | 2011-05-15 | 2015-10-27 | Lighting Science Group Corporation | Lighting system for accentuating regions of a layer and associated methods |
KR101255935B1 (en) * | 2011-07-08 | 2013-04-23 | 삼성전기주식회사 | Power Module Package and Method for Manufacturing the same |
US20130056176A1 (en) * | 2011-08-26 | 2013-03-07 | Mikros Manufacturing, Inc. | Heat Exchanger with Controlled Coefficient of Thermal Expansion |
US8408725B1 (en) | 2011-09-16 | 2013-04-02 | Lighting Science Group Corporation | Remote light wavelength conversion device and associated methods |
US9220202B2 (en) | 2011-12-05 | 2015-12-29 | Biological Illumination, Llc | Lighting system to control the circadian rhythm of agricultural products and associated methods |
US8963450B2 (en) | 2011-12-05 | 2015-02-24 | Biological Illumination, Llc | Adaptable biologically-adjusted indirect lighting device and associated methods |
US9913341B2 (en) | 2011-12-05 | 2018-03-06 | Biological Illumination, Llc | LED lamp for producing biologically-adjusted light including a cyan LED |
US9289574B2 (en) | 2011-12-05 | 2016-03-22 | Biological Illumination, Llc | Three-channel tuned LED lamp for producing biologically-adjusted light |
US8866414B2 (en) | 2011-12-05 | 2014-10-21 | Biological Illumination, Llc | Tunable LED lamp for producing biologically-adjusted light |
US8545034B2 (en) | 2012-01-24 | 2013-10-01 | Lighting Science Group Corporation | Dual characteristic color conversion enclosure and associated methods |
CN102548367B (en) * | 2012-02-07 | 2014-07-02 | 山东大学 | Small passageway liquid cooling base board of power electronic integration module with double-trapezoid cross section fins |
US9402294B2 (en) | 2012-05-08 | 2016-07-26 | Lighting Science Group Corporation | Self-calibrating multi-directional security luminaire and associated methods |
US8899776B2 (en) | 2012-05-07 | 2014-12-02 | Lighting Science Group Corporation | Low-angle thoroughfare surface lighting device |
US8680457B2 (en) | 2012-05-07 | 2014-03-25 | Lighting Science Group Corporation | Motion detection system and associated methods having at least one LED of second set of LEDs to vary its voltage |
US9006987B2 (en) | 2012-05-07 | 2015-04-14 | Lighting Science Group, Inc. | Wall-mountable luminaire and associated systems and methods |
US8899775B2 (en) | 2013-03-15 | 2014-12-02 | Lighting Science Group Corporation | Low-angle thoroughfare surface lighting device |
JP5924106B2 (en) * | 2012-05-08 | 2016-05-25 | 富士電機株式会社 | Power converter |
US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
US9127818B2 (en) | 2012-10-03 | 2015-09-08 | Lighting Science Group Corporation | Elongated LED luminaire and associated methods |
US9174067B2 (en) | 2012-10-15 | 2015-11-03 | Biological Illumination, Llc | System for treating light treatable conditions and associated methods |
US9322516B2 (en) | 2012-11-07 | 2016-04-26 | Lighting Science Group Corporation | Luminaire having vented optical chamber and associated methods |
CN103809708A (en) * | 2012-11-07 | 2014-05-21 | 辉达公司 | Panel electronic device, auxiliary heat dissipating device of panel electronic device and assembly of panel electronic device and auxiliary heat dissipating device |
US9347655B2 (en) | 2013-03-11 | 2016-05-24 | Lighting Science Group Corporation | Rotatable lighting device |
US9459397B2 (en) | 2013-03-12 | 2016-10-04 | Lighting Science Group Corporation | Edge lit lighting device |
US10270220B1 (en) * | 2013-03-13 | 2019-04-23 | Science Research Laboratory, Inc. | Methods and systems for heat flux heat removal |
US9255670B2 (en) | 2013-03-15 | 2016-02-09 | Lighting Science Group Corporation | Street lighting device for communicating with observers and associated methods |
US20140268731A1 (en) | 2013-03-15 | 2014-09-18 | Lighting Science Group Corpporation | Low bay lighting system and associated methods |
EP2992577B1 (en) | 2013-05-02 | 2019-01-09 | Koninklijke Philips N.V. | Cooling device for cooling a laser arrangement and laser system comprising cooling devices |
US9510478B2 (en) | 2013-06-20 | 2016-11-29 | Honeywell International Inc. | Cooling device including etched lateral microchannels |
US20150034280A1 (en) * | 2013-08-01 | 2015-02-05 | Hamilton Sundstrand Corporation | Header for electronic cooler |
US9041193B2 (en) | 2013-09-17 | 2015-05-26 | Hamilton Sundstrand Corporation | Semiconductor substrate including a cooling channel and method of forming a semiconductor substrate including a cooling channel |
US9429294B2 (en) | 2013-11-11 | 2016-08-30 | Lighting Science Group Corporation | System for directional control of light and associated methods |
US20150195951A1 (en) * | 2014-01-06 | 2015-07-09 | Ge Aviation Systems Llc | Cooled electronic assembly and cooling device |
JP6279950B2 (en) * | 2014-03-25 | 2018-02-14 | 京セラ株式会社 | Heat exchange member |
JP6156283B2 (en) * | 2014-08-07 | 2017-07-05 | 株式会社デンソー | Power converter |
WO2016044246A1 (en) * | 2014-09-15 | 2016-03-24 | D Onofrio Nicholas Michael | Liquid cooled metal core printed circuit board |
KR102291151B1 (en) * | 2014-11-03 | 2021-08-19 | 현대모비스 주식회사 | Cooling flow channel module for power changing device and power changing device having the same |
US20160150678A1 (en) * | 2014-11-22 | 2016-05-26 | Gerald Ho Kim | Silicon Cooling Plate With An Integrated PCB |
US20170303431A1 (en) * | 2014-11-22 | 2017-10-19 | Gerald Ho Kim | Silicon Cooling Plate With An Integrated PCB |
US9762018B2 (en) | 2014-12-09 | 2017-09-12 | Raytheon Company | System and method for cooling a laser gain medium using an ultra-thin liquid thermal optical interface |
US9445526B2 (en) | 2014-12-22 | 2016-09-13 | Toyota Motor Engineering & Manufacturing North America, Inc. | Modular jet impingement assemblies with passive and active flow control for electronics cooling |
FI127831B (en) * | 2015-01-15 | 2019-03-29 | Lappeenrannan Teknillinen Yliopisto | A method for fabricating a semiconductor module |
US9693487B2 (en) | 2015-02-06 | 2017-06-27 | Caterpillar Inc. | Heat management and removal assemblies for semiconductor devices |
CN104768356B (en) * | 2015-04-27 | 2017-06-06 | 中国电子科技集团公司第三十八研究所 | A kind of water cooling hardened structure of application 3D printing technique |
CN104852257A (en) * | 2015-05-18 | 2015-08-19 | 大连理工大学 | Large-diameter laser liquid cooling mirror structure |
US9443786B1 (en) * | 2015-08-19 | 2016-09-13 | Ac Propulsion, Inc. | Packaging and cooling method and apparatus for power semiconductor devices |
US9980415B2 (en) | 2015-08-20 | 2018-05-22 | Toyota Motor Engineering & Manufacturing North America, Inc. | Configurable double-sided modular jet impingement assemblies for electronics cooling |
US11003808B2 (en) * | 2015-09-30 | 2021-05-11 | Siemens Industry Software Inc. | Subtractive design for heat sink improvement |
US9953899B2 (en) | 2015-09-30 | 2018-04-24 | Microfabrica Inc. | Micro heat transfer arrays, micro cold plates, and thermal management systems for cooling semiconductor devices, and methods for using and making such arrays, plates, and systems |
US10211590B2 (en) | 2015-11-25 | 2019-02-19 | Raytheon Company | Dual-function optical bench and cooling manifold for high-power laser system |
US10056731B2 (en) | 2015-11-25 | 2018-08-21 | Raytheon Company | Planar waveguide (PWG) amplifier-based laser system with adaptive optic wavefront correction in low-power beam path |
US11114813B2 (en) | 2015-11-25 | 2021-09-07 | Raytheon Company | Integrated pumplight homogenizer and signal injector for high-power laser system |
US10297968B2 (en) | 2015-11-25 | 2019-05-21 | Raytheon Company | High-gain single planar waveguide (PWG) amplifier laser system |
US9865988B2 (en) | 2015-11-25 | 2018-01-09 | Raytheon Company | High-power planar waveguide (PWG) pumphead with modular components for high-power laser system |
US10069270B2 (en) | 2016-02-11 | 2018-09-04 | Raytheon Company | Planar waveguides with enhanced support and/or cooling features for high-power laser systems |
US9917413B2 (en) * | 2016-02-11 | 2018-03-13 | Coherent, Inc. | Cooling apparatus for diode-laser bars |
CN105576113A (en) * | 2016-02-16 | 2016-05-11 | 广东富信科技股份有限公司 | Semiconductor refrigeration component |
US10411435B2 (en) | 2016-06-06 | 2019-09-10 | Raytheon Company | Dual-axis adaptive optic (AO) system for high-power lasers |
US11022383B2 (en) | 2016-06-16 | 2021-06-01 | Teledyne Scientific & Imaging, Llc | Interface-free thermal management system for high power devices co-fabricated with electronic circuit |
US10492343B2 (en) * | 2016-08-23 | 2019-11-26 | Ford Global Technologies, Llc | Vehicle power module assembly with cooling |
EP4231796A3 (en) | 2016-08-26 | 2023-11-29 | Inertech IP LLC | Cooling systems and methods using single-phase fluid and a flat tube heat exchanger with counter flow circuiting |
US10615100B2 (en) * | 2016-12-08 | 2020-04-07 | Toyota Motor Engineering & Manufacturing North America, Inc. | Electronics assemblies and cooling structures having metalized exterior surface |
CN108738368B (en) * | 2017-02-13 | 2022-06-17 | 新电元工业株式会社 | Electronic device |
CN107634037A (en) * | 2017-03-02 | 2018-01-26 | 天津开发区天地信息技术有限公司 | High heat conduction package substrate |
CN108011007B (en) * | 2017-11-28 | 2019-11-08 | 刘琼 | LED encapsulation structure |
CN108011008B (en) * | 2017-11-28 | 2020-07-07 | 西安科锐盛创新科技有限公司 | LED packaging structure |
CN108006491B (en) * | 2017-11-28 | 2020-10-30 | 吉安建伟纸塑制品包装有限公司 | LED tunnel lamp |
CN108011019B (en) * | 2017-11-28 | 2019-12-17 | 廊坊源驰科技有限公司 | LED packaging method |
CN108006566B (en) * | 2017-11-28 | 2020-06-05 | 高邮市诚顺照明电器有限公司 | Solar street lamp |
CN108006490B (en) * | 2017-11-28 | 2020-07-07 | 江苏明月照明电器有限公司 | LED tunnel lamp |
CN108006488B (en) * | 2017-11-28 | 2020-06-26 | 广东胜和照明实业有限公司 | LED wall washer |
US10511135B2 (en) | 2017-12-19 | 2019-12-17 | Raytheon Company | Laser system with mechanically-robust monolithic fused planar waveguide (PWG) structure |
DE102018112000A1 (en) | 2018-05-18 | 2019-11-21 | Rogers Germany Gmbh | A system for cooling a metal-ceramic substrate, a metal-ceramic substrate, and method of manufacturing the system |
US11133639B2 (en) | 2018-07-24 | 2021-09-28 | Raytheon Company | Fast axis thermal lens compensation for a planar amplifier structure |
US11729945B2 (en) * | 2018-10-25 | 2023-08-15 | Mikros Technologies Llc | Active device with heat sink and low mechanical stress |
CN110010574B (en) * | 2018-12-29 | 2021-02-09 | 浙江臻镭科技股份有限公司 | Multilayer stacked longitudinally interconnected radio frequency structure and manufacturing method thereof |
CN109980317B (en) * | 2019-03-15 | 2021-05-18 | 北京航空航天大学 | Space power supply system cold plate with active adjusting cooling capacity distribution |
KR102495489B1 (en) | 2019-04-24 | 2023-02-03 | 한화에어로스페이스 주식회사 | Cooling device |
US10874037B1 (en) * | 2019-09-23 | 2020-12-22 | Ford Global Technologies, Llc | Power-module assembly with cooling arrangement |
US11101509B2 (en) * | 2019-10-02 | 2021-08-24 | GM Global Technology Operations LLC | Battery cooling plate with distributed coolant flow |
CN112696961B (en) * | 2019-10-23 | 2022-04-01 | 北京航空航天大学 | Three-stage phase change heat exchanger |
US11428478B2 (en) | 2019-12-16 | 2022-08-30 | Toyota Motor Engineering & Manufacturing North America, Inc. | Fin geometries for manifold microchannel heat sinks |
DE102020200301A1 (en) * | 2020-01-13 | 2021-07-15 | Zf Friedrichshafen Ag | Heat sink and power module assembly |
US20210366806A1 (en) * | 2020-05-20 | 2021-11-25 | Google Llc | Spring Loaded Compliant Coolant Distribution Manifold for Direct Liquid Cooled Modules |
US11602087B2 (en) | 2020-10-30 | 2023-03-07 | Toyota Jidosha Kabushiki Kaisha | Double-sided hybrid cooling of PCB embedded power electronics and capacitors |
CN114178812B (en) * | 2021-12-21 | 2023-05-12 | 威海凯美立电子有限公司 | Be applied to assembly machine of lamination formula auto radiator |
US11723173B1 (en) | 2022-03-23 | 2023-08-08 | Rolls-Royce Corporation | Stacked cold plate with flow guiding vanes and method of manufacturing |
Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4559580A (en) * | 1983-11-04 | 1985-12-17 | Sundstrand Corporation | Semiconductor package with internal heat exchanger |
US4573067A (en) * | 1981-03-02 | 1986-02-25 | The Board Of Trustees Of The Leland Stanford Junior University | Method and means for improved heat removal in compact semiconductor integrated circuits |
US4758926A (en) * | 1986-03-31 | 1988-07-19 | Microelectronics And Computer Technology Corporation | Fluid-cooled integrated circuit package |
US4759403A (en) * | 1986-04-30 | 1988-07-26 | International Business Machines Corp. | Hydraulic manifold for water cooling of multi-chip electric modules |
US5016090A (en) * | 1990-03-21 | 1991-05-14 | International Business Machines Corporation | Cross-hatch flow distribution and applications thereof |
US5345107A (en) * | 1989-09-25 | 1994-09-06 | Hitachi, Ltd. | Cooling apparatus for electronic device |
US5388635A (en) * | 1990-04-27 | 1995-02-14 | International Business Machines Corporation | Compliant fluidic coolant hat |
US5453641A (en) * | 1992-12-16 | 1995-09-26 | Sdl, Inc. | Waste heat removal system |
US5692558A (en) * | 1996-07-22 | 1997-12-02 | Northrop Grumman Corporation | Microchannel cooling using aviation fuels for airborne electronics |
US5727618A (en) * | 1993-08-23 | 1998-03-17 | Sdl Inc | Modular microchannel heat exchanger |
US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
US5998240A (en) * | 1996-07-22 | 1999-12-07 | Northrop Grumman Corporation | Method of extracting heat from a semiconductor body and forming microchannels therein |
US6014312A (en) * | 1997-03-17 | 2000-01-11 | Curamik Electronics Gmbh | Cooler or heat sink for electrical components or circuits and an electrical circuit with this heat sink |
US6129145A (en) * | 1997-08-28 | 2000-10-10 | Sumitomo Electric Industries, Ltd. | Heat dissipator including coolant passage and method of fabricating the same |
US6131650A (en) * | 1999-07-20 | 2000-10-17 | Thermal Corp. | Fluid cooled single phase heat sink |
US6188575B1 (en) * | 1998-06-30 | 2001-02-13 | Intersil Corporation | Heat exchanging chassis and method |
US6344686B1 (en) * | 1998-11-27 | 2002-02-05 | Alstom Holdings | Power electronic component including cooling means |
US6388635B1 (en) * | 1998-11-25 | 2002-05-14 | C2Sat Communications Ab | Feeder horn, intended especially for two-way satellite communication |
US6449158B1 (en) * | 2001-12-20 | 2002-09-10 | Motorola, Inc. | Method and apparatus for securing an electronic power device to a heat spreader |
US20030024689A1 (en) * | 2001-08-06 | 2003-02-06 | Kabushiki Kaisha Toshiba | Cooling device for heat-generating elements |
US6529394B1 (en) * | 2000-11-07 | 2003-03-04 | United Defense Lp | Inverter for an electric motor |
US20030066634A1 (en) * | 2001-10-09 | 2003-04-10 | Mikros Manufacturing, Inc. | Heat exchanger |
US20030108684A1 (en) * | 2001-09-17 | 2003-06-12 | Clariant International Ltd. | Fluorinated cyclopenta[a]naphthalenes and their use in liquid-crystal mixtures |
US6678182B2 (en) * | 2000-11-07 | 2004-01-13 | United Defense Lp | Electrical bus with associated porous metal heat sink and method of manufacturing same |
US20040022691A1 (en) * | 2001-08-15 | 2004-02-05 | Allen Susan D. | Method of manufacturing and design of microreactors, including microanalytical and separation devices |
US20050041087A1 (en) * | 2003-08-19 | 2005-02-24 | Funai Electric Co., Ltd. | Photoprinter printing image on recording paper |
US7032651B2 (en) * | 2003-06-23 | 2006-04-25 | Raytheon Company | Heat exchanger |
US20060113063A1 (en) * | 2004-10-15 | 2006-06-01 | Lalit Chordia | Thin-plate microchannel structure |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06326226A (en) * | 1993-03-15 | 1994-11-25 | Toshiba Corp | Cooling unit |
US6237682B1 (en) | 1999-04-30 | 2001-05-29 | Motorola, Inc. | Cooling module including a pressure relief mechanism |
US7000684B2 (en) * | 2002-11-01 | 2006-02-21 | Cooligy, Inc. | Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device |
-
2004
- 2004-11-24 US US10/998,707 patent/US7353859B2/en not_active Expired - Fee Related
-
2005
- 2005-11-14 EP EP05858320A patent/EP1825730B1/en not_active Not-in-force
- 2005-11-14 WO PCT/US2005/041087 patent/WO2007001456A1/en active Application Filing
- 2005-11-14 CA CA2589183A patent/CA2589183C/en not_active Expired - Fee Related
- 2005-11-14 CN CN200580046881.XA patent/CN100559926C/en not_active Expired - Fee Related
- 2005-11-14 JP JP2007543147A patent/JP5052350B2/en not_active Expired - Fee Related
- 2005-11-14 DE DE602005025923T patent/DE602005025923D1/en active Active
-
2007
- 2007-03-29 US US11/693,255 patent/US20070215325A1/en not_active Abandoned
- 2007-05-20 IL IL183311A patent/IL183311A0/en not_active IP Right Cessation
Patent Citations (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4573067A (en) * | 1981-03-02 | 1986-02-25 | The Board Of Trustees Of The Leland Stanford Junior University | Method and means for improved heat removal in compact semiconductor integrated circuits |
US4559580A (en) * | 1983-11-04 | 1985-12-17 | Sundstrand Corporation | Semiconductor package with internal heat exchanger |
US4758926A (en) * | 1986-03-31 | 1988-07-19 | Microelectronics And Computer Technology Corporation | Fluid-cooled integrated circuit package |
US4759403A (en) * | 1986-04-30 | 1988-07-26 | International Business Machines Corp. | Hydraulic manifold for water cooling of multi-chip electric modules |
US5345107A (en) * | 1989-09-25 | 1994-09-06 | Hitachi, Ltd. | Cooling apparatus for electronic device |
US5016090A (en) * | 1990-03-21 | 1991-05-14 | International Business Machines Corporation | Cross-hatch flow distribution and applications thereof |
US5388635A (en) * | 1990-04-27 | 1995-02-14 | International Business Machines Corporation | Compliant fluidic coolant hat |
US5453641A (en) * | 1992-12-16 | 1995-09-26 | Sdl, Inc. | Waste heat removal system |
US5727618A (en) * | 1993-08-23 | 1998-03-17 | Sdl Inc | Modular microchannel heat exchanger |
US5892279A (en) * | 1995-12-11 | 1999-04-06 | Northrop Grumman Corporation | Packaging for electronic power devices and applications using the packaging |
US5692558A (en) * | 1996-07-22 | 1997-12-02 | Northrop Grumman Corporation | Microchannel cooling using aviation fuels for airborne electronics |
US5998240A (en) * | 1996-07-22 | 1999-12-07 | Northrop Grumman Corporation | Method of extracting heat from a semiconductor body and forming microchannels therein |
US6014312A (en) * | 1997-03-17 | 2000-01-11 | Curamik Electronics Gmbh | Cooler or heat sink for electrical components or circuits and an electrical circuit with this heat sink |
US6129145A (en) * | 1997-08-28 | 2000-10-10 | Sumitomo Electric Industries, Ltd. | Heat dissipator including coolant passage and method of fabricating the same |
US6188575B1 (en) * | 1998-06-30 | 2001-02-13 | Intersil Corporation | Heat exchanging chassis and method |
US6388635B1 (en) * | 1998-11-25 | 2002-05-14 | C2Sat Communications Ab | Feeder horn, intended especially for two-way satellite communication |
US6344686B1 (en) * | 1998-11-27 | 2002-02-05 | Alstom Holdings | Power electronic component including cooling means |
US6131650A (en) * | 1999-07-20 | 2000-10-17 | Thermal Corp. | Fluid cooled single phase heat sink |
US6529394B1 (en) * | 2000-11-07 | 2003-03-04 | United Defense Lp | Inverter for an electric motor |
US6678182B2 (en) * | 2000-11-07 | 2004-01-13 | United Defense Lp | Electrical bus with associated porous metal heat sink and method of manufacturing same |
US20030024689A1 (en) * | 2001-08-06 | 2003-02-06 | Kabushiki Kaisha Toshiba | Cooling device for heat-generating elements |
US20040022691A1 (en) * | 2001-08-15 | 2004-02-05 | Allen Susan D. | Method of manufacturing and design of microreactors, including microanalytical and separation devices |
US20030108684A1 (en) * | 2001-09-17 | 2003-06-12 | Clariant International Ltd. | Fluorinated cyclopenta[a]naphthalenes and their use in liquid-crystal mixtures |
US20030066634A1 (en) * | 2001-10-09 | 2003-04-10 | Mikros Manufacturing, Inc. | Heat exchanger |
US6449158B1 (en) * | 2001-12-20 | 2002-09-10 | Motorola, Inc. | Method and apparatus for securing an electronic power device to a heat spreader |
US7032651B2 (en) * | 2003-06-23 | 2006-04-25 | Raytheon Company | Heat exchanger |
US20050041087A1 (en) * | 2003-08-19 | 2005-02-24 | Funai Electric Co., Ltd. | Photoprinter printing image on recording paper |
US20060113063A1 (en) * | 2004-10-15 | 2006-06-01 | Lalit Chordia | Thin-plate microchannel structure |
Cited By (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110120674A1 (en) * | 2008-07-21 | 2011-05-26 | The Regents Of The University Of California | Titanium-based thermal ground plane |
US8807203B2 (en) | 2008-07-21 | 2014-08-19 | The Regents Of The University Of California | Titanium-based thermal ground plane |
WO2010036442A1 (en) * | 2008-07-21 | 2010-04-01 | The Regents Of The University Of California | Titanium-based thermal ground plane |
US10309728B2 (en) | 2008-07-21 | 2019-06-04 | The Regents Of The University Of California | Titanium-based thermal ground plane |
US8120915B2 (en) | 2008-08-18 | 2012-02-21 | General Electric Company | Integral heat sink with spiral manifolds |
US7817422B2 (en) | 2008-08-18 | 2010-10-19 | General Electric Company | Heat sink and cooling and packaging stack for press-packages |
US20100038774A1 (en) * | 2008-08-18 | 2010-02-18 | General Electric Company | Advanced and integrated cooling for press-packages |
US20100038058A1 (en) * | 2008-08-18 | 2010-02-18 | General Electric Company | Heat sink and cooling and packaging stack for press-packages |
US20100315782A1 (en) * | 2008-08-18 | 2010-12-16 | General Electric Company | Integral heat sink with spiral manifolds |
US20100157526A1 (en) * | 2008-12-22 | 2010-06-24 | General Electric Company | Low cost anufacturing of micro-channel heatsink |
US8929071B2 (en) | 2008-12-22 | 2015-01-06 | General Electric Company | Low cost manufacturing of micro-channel heatsink |
US20100175857A1 (en) * | 2009-01-15 | 2010-07-15 | General Electric Company | Millichannel heat sink, and stack and apparatus using the same |
EP2222150A1 (en) * | 2009-02-24 | 2010-08-25 | Jungheinrich Aktiengesellschaft | Circuit board with cooling unit |
US7898807B2 (en) * | 2009-03-09 | 2011-03-01 | General Electric Company | Methods for making millichannel substrate, and cooling device and apparatus using the substrate |
US20100226093A1 (en) * | 2009-03-09 | 2010-09-09 | General Electric Company | Methods for making millichannel substrate, and cooling device and apparatus using the substrate |
CN101840914A (en) * | 2009-03-13 | 2010-09-22 | 通用电气公司 | Power model with double-sided cooled of power overlay |
US8358000B2 (en) * | 2009-03-13 | 2013-01-22 | General Electric Company | Double side cooled power module with power overlay |
US20100230800A1 (en) * | 2009-03-13 | 2010-09-16 | Richard Alfred Beaupre | Double side cooled power module with power overlay |
US20110226445A1 (en) * | 2010-03-22 | 2011-09-22 | Brand Joseph H | Heat exchanger |
US9596785B2 (en) | 2010-03-22 | 2017-03-14 | Pratt & Whitney Canada Corp. | Heat exchanger |
US20110317368A1 (en) * | 2010-06-29 | 2011-12-29 | General Electric Company | Heat sinks with c-shaped manifolds and millichannel cooling |
US8218320B2 (en) * | 2010-06-29 | 2012-07-10 | General Electric Company | Heat sinks with C-shaped manifolds and millichannel cooling |
US8982558B2 (en) * | 2011-06-24 | 2015-03-17 | General Electric Company | Cooling device for a power module, and a related method thereof |
US20120327603A1 (en) * | 2011-06-24 | 2012-12-27 | General Electric Company | Cooling device for a power module, and a related method thereof |
US8897010B2 (en) * | 2011-08-22 | 2014-11-25 | General Electric Company | High performance liquid cooled heatsink for IGBT modules |
US20130050944A1 (en) * | 2011-08-22 | 2013-02-28 | Mark Eugene Shepard | High performance liquid cooled heatsink for igbt modules |
EP2973761A4 (en) * | 2013-03-15 | 2016-10-12 | Mtpv Power Corp | Microchannel heat sink for micro-gap thermophotovoltaic device |
KR20160008506A (en) * | 2013-03-15 | 2016-01-22 | 엠티피브이 파워 코퍼레이션 | Microchannel heat sink for micro-gap thermophotovoltaic device |
JP2016516388A (en) * | 2013-03-15 | 2016-06-02 | エムティーピーヴィ・パワー・コーポレーション | Microchannel heat sink for microgap thermophotovoltaic devices |
KR101998920B1 (en) * | 2013-03-15 | 2019-09-27 | 엠티피브이 파워 코퍼레이션 | Microchannel heat sink for micro-gap thermophotovoltaic device |
WO2014144535A1 (en) * | 2013-03-15 | 2014-09-18 | Mtpv Power Corporation | Microchannel heat sink for micro-gap thermophotovoltaic device |
US20140261644A1 (en) * | 2013-03-15 | 2014-09-18 | Mtpv Power Corporation | Method and structure of a microchannel heat sink device for micro-gap thermophotovoltaic electrical energy generation |
US20150180311A1 (en) * | 2013-12-20 | 2015-06-25 | Industrial Technology Research Institute | Motor controller with cooling function and cooling method for cooling a motor controller |
US9337121B2 (en) | 2014-01-09 | 2016-05-10 | Electronics And Telecommunications Research Institute | Semiconductor device and method of fabricating the same |
US10020201B2 (en) | 2014-01-09 | 2018-07-10 | Electronics And Telecommunications Research Institute | Semiconductor device and method of fabricating the same |
US9437523B2 (en) | 2014-05-30 | 2016-09-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Two-sided jet impingement assemblies and power electronics modules comprising the same |
WO2016089385A1 (en) * | 2014-12-03 | 2016-06-09 | Ge Intelligent Platforms, Inc. | Combined energy dissipation apparatus and method |
US20170321966A1 (en) * | 2014-12-03 | 2017-11-09 | Ge Intelligent Platforms, Inc. | Combined energy dissipation apparatus and method |
US9613884B2 (en) | 2015-03-03 | 2017-04-04 | Electronics And Telecommunications Research Institute | Semiconductor device |
US10574175B2 (en) | 2016-02-08 | 2020-02-25 | Mtpv Power Corporation | Energy conversion system with radiative and transmissive emitter |
US11264938B2 (en) | 2016-02-08 | 2022-03-01 | Mtpv Power Corporation | Radiative micron-gap thermophotovoltaic system with transparent emitter |
US9484284B1 (en) | 2016-03-16 | 2016-11-01 | Northrop Grumman Systems Corporation | Microfluidic impingement jet cooled embedded diamond GaN HEMT |
US10928141B2 (en) | 2017-03-06 | 2021-02-23 | Dana Canada Corporation | Heat exchanger for cooling multiple layers of electronic modules |
US11310935B2 (en) | 2017-05-17 | 2022-04-19 | Huawei Technologies Co., Ltd. | Heat dissipator and communications device |
US11641725B2 (en) | 2017-05-17 | 2023-05-02 | Huawei Technologies Co., Ltd. | Heat dissipator and communications device |
US10622280B2 (en) * | 2018-02-14 | 2020-04-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
US10822096B2 (en) | 2018-03-30 | 2020-11-03 | Ge Aviation Systems Llc | Avionics cooling module |
CN111315182A (en) * | 2018-12-12 | 2020-06-19 | 台达电子工业股份有限公司 | Integrated electronic device |
US20220418159A1 (en) * | 2021-06-24 | 2022-12-29 | Baidu Usa Llc | Multi-system cooling device for high powered integrated circuits |
US11765858B2 (en) * | 2021-06-24 | 2023-09-19 | Baidu Usa Llc | Multi-system cooling device for high powered integrated circuits |
WO2023076093A1 (en) * | 2021-10-25 | 2023-05-04 | Lam Research Corporation | Microchannel assembly cooled power circuits for power boxes of substrate processing systems |
Also Published As
Publication number | Publication date |
---|---|
CA2589183A1 (en) | 2007-01-04 |
US20060108098A1 (en) | 2006-05-25 |
WO2007001456A1 (en) | 2007-01-04 |
CN101103659A (en) | 2008-01-09 |
EP1825730A1 (en) | 2007-08-29 |
JP2008522406A (en) | 2008-06-26 |
CN100559926C (en) | 2009-11-11 |
CA2589183C (en) | 2013-11-12 |
DE602005025923D1 (en) | 2011-02-24 |
EP1825730B1 (en) | 2011-01-12 |
US7353859B2 (en) | 2008-04-08 |
JP5052350B2 (en) | 2012-10-17 |
IL183311A0 (en) | 2007-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20070215325A1 (en) | Double sided heat sink with microchannel cooling | |
EP2200080B1 (en) | Low Cost Manufacturing of Micro-Channel Heatsink | |
US8358000B2 (en) | Double side cooled power module with power overlay | |
US7898807B2 (en) | Methods for making millichannel substrate, and cooling device and apparatus using the substrate | |
US8232637B2 (en) | Insulated metal substrates incorporating advanced cooling | |
JP3254001B2 (en) | Integrated radiator for semiconductor module | |
US7233494B2 (en) | Cooling apparatus, cooled electronic module and methods of fabrication thereof employing an integrated manifold and a plurality of thermally conductive fins | |
US20100302734A1 (en) | Heatsink and method of fabricating same | |
CA2780658C (en) | Cooling device for a power module, and a related method thereof | |
US20100038774A1 (en) | Advanced and integrated cooling for press-packages | |
US20200312746A1 (en) | Modular Microjet Cooling Of Packaged Electronic Components | |
Schulz-Harder et al. | Direct liquid cooling of power electronics devices | |
WO2020210579A1 (en) | Microjet-cooled flanges for electronic devices | |
JPH03257953A (en) | Semiconductor device | |
Steiner et al. | IGBT module setup with integrated micro-heat sinks | |
JPS6229151A (en) | Cooling module for semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: GENERAL ELECTRIC COMPANY, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SOLOVITZ, STEPHEN ADAM;KERN, JOHN MICHAEL;REEL/FRAME:019086/0863 Effective date: 20070326 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |