CN107634037A

CN107634037A - High heat conduction package substrate

Info

Publication number: CN107634037A
Application number: CN201710119406.5A
Authority: CN
Inventors: 王晓嗣
Original assignee: Tianjin Development Zone Tiandi Information Technology Co Ltd
Current assignee: Tianjin Development Zone Tiandi Information Technology Co Ltd
Priority date: 2017-03-02
Filing date: 2017-03-02
Publication date: 2018-01-26

Abstract

High heat conduction package substrate, for the electrical apparatus insulation of power semiconductor, electrical connection, the export of heat is produced when device works.By heat-conducting silicone grease with heat sink during traditional power semiconductor installation, or cabinet is fixed together, and causes thermal resistance big, radiating effect is poor, limits the performance of power semiconductor performance.The present invention passes through vacuum welding, vacuum friction welding (FW), active metal brazing using micro heat pipe and high-heat-conductivity ceramic circuit board, the means such as Nano Silver welding reach metallurgical binding, thermal resistance is reduced, high efficiency and heat radiation is realized, good basis is established to give full play to the performance of power semiconductor.

Description

High heat conduction package substrate

Technical field

The present invention relates to the devices such as power power electronic device, power integrated circuit, power microwave device, power LED envelope The high heat conduction package substrate of dress, belongs to power semiconductor package field and field of heat management.

Background technology

Encapsulation technology is most important for the function of playing power semiconductor.Good electric isolution and heat management, minimum posts Raw electric capacity, few distributed inductance, will be realized by well-designed encapsulating structure.Power semiconductor produces when working Power consumption be converted into heat energy, raise device temperature.More than one critical value of semiconductor devices power consumption, will result in thermally labile And thermal breakdown.Meanwhile many parameters of device can also be adversely affected because temperature raises, as p-n junction reverse current can be by Exponential law increases, and the turn-off time of bipolar device is elongated, and the break over voltage of IGCT reduces.When thermal breakdown is serious, cause device Part fails, and causes economic loss and accident.Therefore the die temperature of limitation power semiconductor just seems no more than certain value It is extremely important.And this measure is realized by encapsulating.Power module package technology, use ceramic substrate Direct Bonding copper （Direct bonding copper abbreviations DBC）, a face copper foil packaging, another side is used for as module bottom surface and copper bottom Plate connects, and is either connected with aluminium silicon carbide bottom plate or is connected for direct fin.At present between power model and fin Combined closely by heat-conducting cream.And the thermal resistance of heat-conducting cream is high, influences tube core heat diffusion and go out.Therefore new encapsulation knot is used Structure, the overall thermal resistance of heat transfer circuit is reduced, accelerate the quick export of tube core heat, be that power semiconductor package technology will solve Matter of utmost importance.

The content of the invention

Therefore, the technical problem to be solved in the present invention is to reduce the overall thermal resistance of heat transfer circuit, accelerate tube core heat Speed is distributed, power device is operated under safe temperature, is played power device efficiency, is increased the service life.

In order to solve the above technical problems, the technical scheme is that micro heat pipe and ceramic substrate copper foil metallurgical binding, heat Resistance reduces, while by the efficient heat transfer performance of micro heat pipe so that die temperature maintains safe temperature all the time, ensures power half The safe, long-term of conductor module, reliability service.

Brief description of the drawings

In Fig. 1 high heat conduction package substrate construction figure figures：1 metal level, 2 ceramics, 3 micro heat pipes.

Claims

1. a kind of package substrate of high heat conduction, it is covered with conductive layer by two-sided（1）Ceramics（2）And micro heat pipe（3）Form, its feature It is：Conductive layer has pattern, and a face pattern is used to encapsulate power power electronic device, power microwave device, logic control circuit, inspection Slowdown monitoring circuit, lead etc.；Another side pattern is connected with micro heat pipe.

2. according to the package substrate of the high heat conduction described in claim 1, it is characterised in that：Conductive layer is anaerobic copper foil or fine aluminium Paper tinsel, conductive layer thickness：0.1~0.6mm.

3. according to the package substrate of the high heat conduction described in claim 1, it is characterised in that：Ceramics are thermal conductive ceramics.

4. according to the package substrate of the high heat conduction described in claim 1, it is characterised in that：Conductive layer is by Direct Bonding, is lived Property solder bonding metal method, nanometer silver process are combined closely with ceramics.

5. according to the package substrate of the high heat conduction described in claim 1, it is characterised in that：Micro heat pipe is manufactured by copper aluminium material material.

6. according to the package substrate of the high heat conduction described in claim 1, it is characterised in that：By true between micro heat pipe and conductive layer Empty friction welding (FW), active metal brazing method, nanometer silver process closely connect.

7. according to the package substrate of the high heat conduction described in claim 3, it is characterised in that：Thermal conductive ceramic is aluminum oxide, aluminium nitride, Carborundum, beryllium oxide, silicon nitride, 0.25~1.00mm of ceramic thickness.