CN101599471B - Cooling structure of power device and manufacturing method thereof - Google Patents
Cooling structure of power device and manufacturing method thereof Download PDFInfo
- Publication number
- CN101599471B CN101599471B CN 200910100292 CN200910100292A CN101599471B CN 101599471 B CN101599471 B CN 101599471B CN 200910100292 CN200910100292 CN 200910100292 CN 200910100292 A CN200910100292 A CN 200910100292A CN 101599471 B CN101599471 B CN 101599471B
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- CN
- China
- Prior art keywords
- power
- power device
- silicon wafer
- bare silicon
- raceway groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a cooling structure of a power device. The cooling structure of the power device comprises a drain metal layer and a metal covering layer, wherein, the drain metal layer is deposited on the back of a power bare wafer; the metal covering layer is provided with micro channels vertically and transversely penetrated; the micro channels are provided with inlets and outlets of cooling fluid; and the metal covering layer is welded with the drain metal layer in a bonding way. The invention also provides a manufacturing method of the cooling structure of the power device. The invention can simultaneously satisfy miniaturization and low noise; besides, the heat emission efficiency is high.
Description
Technical field
The present invention relates to power electronics field, relate in particular to a kind of radiator structure and manufacturing approach thereof with power device (Power Device) of the miniature raceway groove of heat radiation (Microchannel).
Background technology
Power device has been widely used in fields such as national defence, medical treatment, Aero-Space, automobile.Along with power device develops towards microminiaturized and high power direction, how efficiently heat radiation has become the bottleneck of restriction power device development.The heat abstractor of conditional electronic equipment is to utilize fin structure to increase area of dissipation and form forced convection through the fan rotation to take away heat, but there is the big problem of noise in it.Heat pump is the heat abstractor that is used for the other a kind of extensive use of electronic equipment, and its principle is to utilize the evaporation of cooling agent and the purpose that condensation reaches heat radiation, but there is the big problem that takes up room in it, can't be microminiaturized.
In order to solve the heat dissipation problem of electronic equipment, the someone proposes the jet cooling means based on miniature channel structure, has been applied to conventional IC wafer encapsulation.But the miniature channel structure that forefathers propose mainly is produced on the silicon layer of chip, is mainly used in flip-chip (FlipChip) and ball grid array package structure (BGA) etc.The cooling means of not seeing as yet based on miniature channel structure is applied to power chip, like mos field effect transistor (MOSFET) and igbt (IGBT).
Summary of the invention
For overcome existing be used for that the power device radiator structure exists can not satisfy microminiaturized and the little deficiency of noise simultaneously, the present invention provides a kind of radiator structure and manufacturing approach thereof that can satisfy microminiaturization and the power device that noise is little and radiating efficiency is high simultaneously.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of radiator structure of power device; Said power device radiator structure comprises drain metal layer and metal cladding; Said drain metal is deposited upon on the power bare silicon wafer sheet back side; Metal cladding is provided with vertically and the miniature raceway groove that laterally runs through, and miniature raceway groove is provided with the import and the outlet of cooling fluid, metal cladding and the welding of drain metal layer bonding.
As preferred a kind of scheme: said miniature raceway groove forms on metal cladding through engraving method.
A kind of manufacturing approach of radiator structure of power device, said manufacturing approach may further comprise the steps:
(1), power bare silicon wafer sheet is placed on first carrier, the power bare silicon wafer sheet back side up;
(2), power bare silicon wafer sheet back is ground, and carry out back face metalization and handle, form drain electrode;
(3), will place on second carrier with the measure-alike metal disk of power bare silicon wafer sheet vertical, horizontal, on said sheet metal, etch vertically and the miniature raceway groove that laterally runs through, final etch goes out the import and the outlet of cooling fluid;
(4), the power bare silicon wafer sheet after will metallizing turns, and with accomplish the metal disk that miniature raceway groove makes and carry out the bonding welding;
(5), remove first carrier and second carrier, the wafer behind the cutting bonding, the installation of the radiator structure of completion power device.
Technical conceive of the present invention is: cooling fluid gets into from import, through miniature raceway groove, goes out from outlet, has formed cool cycles.Heat has been taken away in mobile and circulation through cooling fluid, plays cooling effect.
Beneficial effect of the present invention mainly shows: satisfy microminiaturized with noise is little and the radiating efficiency height simultaneously.
Description of drawings
Fig. 1 is a structure chart of the present invention.
Fig. 2 is the upward view of Fig. 1.
Fig. 3 is the left view of Fig. 1.
Fig. 4 is the cutaway view of the miniature raceway groove of Fig. 1.
Fig. 5 is the back side import and export position view of the miniature raceway groove of Fig. 1.
Fig. 6 (a)～(e) is a manufacture process sketch map of the present invention.
Fig. 7 is a concrete application example sketch map of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
Embodiment 1
With reference to Fig. 1～Fig. 5; A kind of radiator structure of power device; Said power device radiator structure comprises drain metal layer 3 and metal cladding 1, and drain metal layer 3 is deposited on power bare silicon wafer sheet 4 back sides, and metal cladding 1 is provided with vertically and the miniature raceway groove 2 that laterally runs through; Miniature raceway groove 2 is provided with the import 5 and outlet 6 of cooling fluid, metal cladding 1 and the welding of drain metal layer 3 bondings.
The power bare silicon wafer sheet 4 of present embodiment comprises source electrode 41, grid 42, grid bus 43, dielectric 44, silicon 45, source metal 46, gate metal 47.
With reference to Fig. 1～Fig. 7, a kind of manufacturing approach of radiator structure of power device, said manufacturing approach may further comprise the steps:
(1) power bare silicon wafer sheet 4 is placed on first carrier 7, power bare silicon wafer sheet 4 back sides up;
(2) power bare silicon wafer sheet 4 backs are ground, and carry out back face metalization and handle, form drain electrode;
(3) will place on second carrier with the measure-alike metal disk of power bare silicon wafer sheet 4 vertical, horizontal, and on said sheet metal, etch vertically and the miniature raceway groove that laterally runs through, final etch goes out the import and the outlet of cooling fluid;
(4) the power bare silicon wafer sheet after will metallizing turns, and with accomplish the metal disk that miniature raceway groove makes and carry out the bonding welding;
(5) remove first carrier 7 and second carrier 8, the wafer behind the cutting bonding is accomplished the installation of power device radiator structure.
The specific operation process of present embodiment is: power bare silicon wafer sheet 4 is placed on first carrier 7 of plastic film (or corresponding other carriers) of viscosity, the power bare silicon wafer sheet back side up, shown in Fig. 6 (a); Power bare silicon wafer sheet back is ground, and carry out back face metalization (like deposited copper) and handle, form drain metal layer, shown in Fig. 6 (b); Place on second carrier 8 with the essentially identical metal disk of power bare silicon wafer sheet vertical, horizontal size (exemplary material is a copper) certain thickness; On this sheet metal 1, etch miniature raceway groove 2 (thickness direction does not run through) vertical and that laterally run through; Final etch goes out the import 5 and outlet 6 (thickness that run through sheet metal) of cooling fluid; Process is shown in Fig. 6 (c), and miniature raceway groove is as shown in Figure 4; Power bare silicon wafer sheet after the metallization is turned, and carry out the bonding welding, shown in Fig. 6 (d) with the metal disk of accomplishing miniature raceway groove making; Remove first carrier 7 and second carrier 8, the structure after the completion is shown in Fig. 6 (e), and the wafer behind the para-linkage cuts then, accomplishes the installation of power device radiator structure, further needs the encapsulation of chip.
Like Fig. 7, cooling fluid gets into from extraneous import 9, and through miniature raceway groove 2, outlet 10 is gone out from the external world, has formed cool cycles.Heat has been taken away in mobile and circulation through cooling fluid, plays cooling effect.
Claims (3)
1. the radiator structure of a power device; It is characterized in that: said power device radiator structure comprises drain metal layer and metal cladding; Said drain metal is deposited upon on the power bare silicon wafer sheet back side; Metal cladding is provided with vertically and the miniature raceway groove that laterally runs through, and miniature raceway groove is provided with the import and the outlet of cooling fluid, metal cladding and the welding of drain metal layer bonding.
2. the radiator structure of power device as claimed in claim 1, it is characterized in that: said miniature raceway groove forms on metal cladding through engraving method.
3. the manufacturing approach of the radiator structure of a power device as claimed in claim 1, it is characterized in that: said manufacturing approach may further comprise the steps:
(1), power bare silicon wafer sheet is placed on first carrier, the power bare silicon wafer sheet back side up;
(2), power bare silicon wafer sheet back is ground, and carry out back face metalization and handle, form drain electrode;
(3), will place on second carrier with the measure-alike metal disk of power bare silicon wafer sheet vertical, horizontal, on said metal disk, etch vertically and the miniature raceway groove that laterally runs through, final etch goes out the import and the outlet of cooling fluid;
(4), the power bare silicon wafer sheet after will metallizing turns, and with accomplish the metal disk that miniature raceway groove makes and carry out the bonding welding;
(5), remove first carrier and second carrier, the wafer behind the cutting bonding, the installation of the radiator structure of completion power device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910100292 CN101599471B (en) | 2009-06-29 | 2009-06-29 | Cooling structure of power device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910100292 CN101599471B (en) | 2009-06-29 | 2009-06-29 | Cooling structure of power device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101599471A CN101599471A (en) | 2009-12-09 |
| CN101599471B true CN101599471B (en) | 2012-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910100292 Expired - Fee Related CN101599471B (en) | 2009-06-29 | 2009-06-29 | Cooling structure of power device and manufacturing method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2696126Y (en) * | 2004-04-06 | 2005-04-27 | 谢步明 | IGBT labyrinth water-cooled heat sink |
| CN2798313Y (en) * | 2005-04-09 | 2006-07-19 | 襄樊台基半导体有限公司 | Water cooled radiator for power semiconductor component |
| JP2007227598A (en) * | 2006-02-23 | 2007-09-06 | Toyota Industries Corp | Circuit board and semiconductor device |
| CN101103659A (en) * | 2004-11-24 | 2008-01-09 | 通用电气公司 | Heat sink with microchannel cooling for power devices |
-
2009
- 2009-06-29 CN CN 200910100292 patent/CN101599471B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2696126Y (en) * | 2004-04-06 | 2005-04-27 | 谢步明 | IGBT labyrinth water-cooled heat sink |
| CN101103659A (en) * | 2004-11-24 | 2008-01-09 | 通用电气公司 | Heat sink with microchannel cooling for power devices |
| CN2798313Y (en) * | 2005-04-09 | 2006-07-19 | 襄樊台基半导体有限公司 | Water cooled radiator for power semiconductor component |
| JP2007227598A (en) * | 2006-02-23 | 2007-09-06 | Toyota Industries Corp | Circuit board and semiconductor device |
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| Publication number | Publication date |
|---|---|
| CN101599471A (en) | 2009-12-09 |
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