US20060102228A1 - Method of making solar cell contacts - Google Patents

Method of making solar cell contacts Download PDF

Info

Publication number
US20060102228A1
US20060102228A1 US10/988,208 US98820804A US2006102228A1 US 20060102228 A1 US20060102228 A1 US 20060102228A1 US 98820804 A US98820804 A US 98820804A US 2006102228 A1 US2006102228 A1 US 2006102228A1
Authority
US
United States
Prior art keywords
mol
solar cell
cell contact
silver
glass component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/988,208
Inventor
Srinivasan Sridharan
Tung Pham
Chandrashekhar Khadilkar
Aziz Shaikh
Steve Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vibrantz Corp
Original Assignee
Ferro Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/988,208 priority Critical patent/US20060102228A1/en
Application filed by Ferro Corp filed Critical Ferro Corp
Assigned to FERRO CORPORATION reassignment FERRO CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KHADILKAR, CHANDRASHEKHAR S., KIM, STEVE S., PHAM, TUNG, SHAIKH, AZIZ S., SRIDHARAN, SRINIVASAN
Priority to AU2005307036A priority patent/AU2005307036B2/en
Priority to PCT/US2005/036680 priority patent/WO2006055126A2/en
Priority to KR1020077010508A priority patent/KR101127085B1/en
Priority to EP05815033.5A priority patent/EP1810343A4/en
Priority to CA2584073A priority patent/CA2584073C/en
Priority to CN201210335668.2A priority patent/CN102891215B/en
Priority to JP2007541189A priority patent/JP2008520094A/en
Priority to CN2005800385361A priority patent/CN101379620B/en
Priority to TW094139362A priority patent/TWI380458B/en
Assigned to NATIONAL CITY BANK, AS ADMINISTRATIVE AGENT reassignment NATIONAL CITY BANK, AS ADMINISTRATIVE AGENT SECURITY AGREEMENT Assignors: FERRO CORPORATION
Publication of US20060102228A1 publication Critical patent/US20060102228A1/en
Assigned to NATIONAL CITY BANK, AS COLLATERAL AGENT reassignment NATIONAL CITY BANK, AS COLLATERAL AGENT SECURITY AGREEMENT Assignors: FERRO CORPORATION
Assigned to J.P. MORGAN TRUST COMPANY, NATIONAL ASSOCIATION, AS TRUSTEE reassignment J.P. MORGAN TRUST COMPANY, NATIONAL ASSOCIATION, AS TRUSTEE SECURITY AGREEMENT Assignors: FERRO CORPORATION
Assigned to FERRO CORPORATION reassignment FERRO CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. (AS SUCCESSOR-IN-INTEREST TO J.P. MORGAN TRUST COMPANY)
Priority to US12/573,209 priority patent/US8889041B2/en
Priority to JP2012233543A priority patent/JP5591901B2/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07Glass compositions containing silica with less than 40% silica by weight containing lead
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • This invention relates to a paste composition and a method of making contacts for solar cells as well as other related components used in fabricating photovoltaic cells.
  • Solar cells are generally made of semiconductor materials, such as silicon (Si), which convert sunlight into useful electrical energy.
  • Solar cells are, in general, made of thin wafers of Si in which the required PN junction is formed by diffusing phosphorus (P) from a suitable phosphorus source into a P-type Si wafer.
  • P phosphorus
  • the side of silicon wafer on which sunlight is incident is in general coated with an anti-reflective coating (ARC) to prevent reflective loss of incoming sunlight, and thus to increase the efficiency of the solar cell.
  • ARC anti-reflective coating
  • a two dimensional electrode grid pattern known as a front contact makes a connection to the N-side of silicon, and a coating of aluminum (Al) on the other side (back contact) makes connection to the P-side of the silicon.
  • the present invention provides glass compositions for use in front contact paste materials that provide low series resistance (Rs) and high shunt resistance (R sh ) to give high performance solar cells, as measured by efficiency ( ⁇ ) and fill factor (FF).
  • the present invention includes a solar cell contact made from a mixture of ingredients, wherein the mixture comprises a solids portion and an organics portion.
  • the solids portion comprises from about 85 to about 99 wt % of a metal component preferably silver, and from about 1 to about 15 wt % of a glass component.
  • the glass component comprises from about 15 to about 75 mol % PbO, and from about 5 to about 50 mol % SiO 2 .
  • the metal component comprises silver flakes, silver power, colloidal silver, and/or phosphorus-coated silver powder. Methods for making solar cells using the above ingredients and amounts are also envisioned.
  • compositions and methods of the present invention overcome the drawbacks of the prior art by facilitating optimized interaction, bonding, and contact formation between front contact components, typically Ag and Si, through the glass medium.
  • a conductive paste containing glass and silver is printed on a silicon substrate, and fired to fuse the glass and sinter the metal therein.
  • Ag/Si conductive islands are formed providing conductive bridges between bulk paste and silicon wafer.
  • Leaded glasses allow low firing temperatures owing to their excellent flow characteristics relatively at low temperatures.
  • Silver- and glass-containing thick film pastes are used to make front contacts for silicon-based solar cells to collect current generated by exposure to light.
  • the cell electrical performance as measured by cell efficiency ( ⁇ ) and fill factor (FF) is strongly affected by the microstructure and the electrical properties of the silver/silicon interface.
  • the electrical properties of the solar cell are also characterized by R S and R Sh .
  • the composition and microstructure of the front contact interface largely determine R S .
  • the paste is generally applied by screen-printing, methods such as extrusion, pad printing, and hot melt printing may be used.
  • Solar cells with screen-printed front contacts are fired to relatively low temperatures (550° C. to 850° C. wafer temperature; firing furnace set temperatures of 650° C.
  • the front contact paste before firing, contains a silver-containing compound in one or more forms (powder, flake, colloid) and a glass component, and/or other additives.
  • the glass component contains at least PbO and SiO 2 .
  • the sequence and rates of reactions occurring as a function of temperature are factors in forming the low resistance contact between the silver paste and silicon wafer.
  • the interface structure consists of multiple phases: substrate silicon, Ag/Si islands, Ag precipitates within the insulating glass layer, and bulk silver.
  • the glass forms a nearly continuous layer between the silicon interface and the bulk silver.
  • Solar cells include a front contact made from pastes or inks consisting of a mixture of ingredients. These mixtures, prior to firing, comprise a solids portion and an organics portion.
  • the solids portion comprises a conductive metal and a glass component.
  • the solids portion for the paste composition according to the present invention comprises: (a) a metal component comprising silver, an alloy of silver, or an oxide of silver, or a silver compound (i.e., silver component), from about 85 to about 99 wt %, preferably from about 88 to about 95 wt % of the solids portion; and, (b) a glass component, from about 1 to about 15 wt %, preferably about 2 to about 9 wt %, and more preferably from about 3 to about 8 wt % of the solids portion.
  • the organics portion of the pastes herein comprises (a) at least about 80 wt % organic solvent; (b) up to about 15 wt % of a thermoplastic resin; (c) up to about 4 wt % of a thixotropic agent; and (d) up to about 2 wt % of a wetting agent.
  • the use of more than one solvent, resin, thixotrope, and wetting agent is also envisioned.
  • weight ratios of the solids portion to the organics portion includes a weight ratio of the solids portion to the organics portion from about 20:1 to about 1:20. In preferred embodiments the weight ratio is from about 15:1 to about 1:15, and most preferably the ratio is about 10:1 to about 1:10.
  • Each of the major ingredient types (glass, metal, organics) is detailed hereinbelow.
  • the glass component comprises, prior to firing, one or more glass compositions.
  • Each glass composition comprises oxide frits including, at a minimum, PbO and SiO 2 .
  • Zinc oxide (ZnO) may replace a portion of the PbO in the glass component herein.
  • a glass composition comprises the ingredients of Table 1. When at least two glass compositions are present, the selection of their makeup and proportions has an effect on the quality of the solar cell contact.
  • the use of a (first) glass composition containing a high proportion of ZnO e.g., up to about 35 mol %) provides minimum penetration into silicon.
  • Such a glass composition is exemplified by embodiments V and VII in Table 3, and composition A in Table 4.
  • a (second) zinc-free glass composition with high proportion of PbO provides more penetration into silicon.
  • Such a glass composition is exemplified by embodiments VI, VIII, IX, X, and XI in Table 3, and compositions B, C, D, and E in Table 4. Regardless of the number of glass compositions used, the total content of PbO and SiO 2 in the glass component overall will fall within the range of about 15 to about 75 mol % PbO, and from about 5 to about 50 mol % SiO 2 .
  • Varying proportions of the first and second glass compositions can be used in forming a solar cell contact to control, the extent of penetration into silicon, and hence the resultant solar cell properties.
  • the first and second glass compositions may be present in a weight ratio of about 1:20 to about 20:1, and preferably about 1:3 to about 3:1.
  • the glass component preferably contains no cadmium or oxides of cadmium.
  • a portion of PbO can be replaced by Bi 2 O 3 to provide a glass composition used in making a solar cell within the scope of the present invention.
  • about 1 to about 30 mol % of Bi 2 O 3 can be used.
  • inventions may further comprise Al 2 O 3 , Ta 2 O 5 , Sb 2 O 5 , ZrO 2 , HfO 2 , In 2 O 3 , Ga 2 O 3 , Y 2 O 3 , Yb 2 O 3 and combinations thereof.
  • An entry such as Y 2 O 3 means that Y 2 O 3 or Yb 2 O 3 or a combination of the two is present in the specified amount.
  • the embodiments set forth in Table 1, may in addition include the following oxide frit ingredients as shown in Table 2. TABLE 1 Oxide frit ingredients in mole percent of the glass component.
  • Glass Composition III (more Ingredient I (broad) II (preferred) preferred) PbO 15-75 25-66 30-64 SiO 2 5-50 15-40 20-35 ZnO 0-50 5-35 20-33 PbO + ZnO 15-80 — —
  • Glass Composition III (more Ingredient I (broad) II (preferred) preferred) Al 2 O 3 0-15 1-11 2-10 Ta 2 O 5 0.1-10 0.1-3 0.2-2 Sb 2 O 5 0.1-10 0.1-3 0.2-2 ZrO 2 0.1-10 0.5-5 1-2 P 2 O 5 0.1-8 1-5 2-4 MoO 3 0.1-3 — — HfO 2 + In 2 O 3 + Ga 2 O 3 0.1-15 1-10 3-8 Y 2 O 3 + Yb 2 O 3 0.1-10 1-8 3-8
  • a given embodiment need not contain all frit ingredients as noted in Table 2, but various combinations are possible.
  • Other specific embodiments may contain various amounts of the aforementioned ingredients in mole percent as shown in Table 3.
  • TABLE 3 Further embodiments of glass compositions in the glass component in mole percent of the glass component.
  • the source of the silver in the silver component can be one or more fine powders of silver metal, or alloys of silver.
  • a portion of the silver can be added as silver oxide (Ag 2 O) or as silver salts such as AgCl, AgNO 3 or AgOOCCH 3 (silver acetate).
  • the silver may be coated with various materials such as phosphorus.
  • the silver oxide can be dissolved in the glass during the glass melting/manufacturing process.
  • the silver particles used in the paste may be spherical, flaked, or provided in a colloidal suspension, and combinations of the foregoing may be used. Any of the aforementioned silver sources may be used to contribute silver to the silver component of the solar cell contacts herein.
  • the solids portion of the paste may comprise about 80 to about 99 wt % spherical silver particles or about 75 to about 90 wt % silver particles and about 1 to about 10 wt % silver flakes.
  • Another alternative composition of the solids portion comprises about 75 to about 90 wt % silver flakes and about 1 to about 10 wt % of colloidal silver.
  • the solids portion may comprise about 60 to about 95 wt % of silver powder or silver flakes and about 0.1 to about 20 wt % of colloidal silver.
  • Suitable commercial examples of silver particles are spherical silver powder Ag3000-1, silver flakes SF-23, and colloidal silver suspension RDAGCOLB, all commercially available from Ferro Corporation, Cleveland, Ohio.
  • Phosphorus can be added to the paste in a variety of ways to reduce the resistance of the front contacts.
  • certain glasses can be modified with P 2 O 5 in the form of a powdered or fritted oxide, or phosphorus can be added to the paste by way of phosphate esters and other organo-phosphorus compounds. More simply, phosphorus can be added as a coating to silver particles prior to making a paste. In such case, prior to pasting, the silver particles are mixed with liquid phosphorus and a solvent.
  • a blend of from about 85 to about 95 wt % silver particles, from about 5 to about 15 wt % solvent and from about 0.5 to about 10 wt % liquid phosphorus is mixed and the solvent evaporated.
  • Phosphorus coated silver particles help ensure intimate mixing of phosphorus and silver in the inventive pastes.
  • additives such as fine silicon or carbon powder, or both, can be added to the paste to control the silver reduction and precipitation reaction.
  • the silver precipitation at the interface or in the bulk glass can also be controlled by adjusting the firing atmosphere (e.g., firing in flowing N 2 or N 2 /H 2 /H 2 O mixtures).
  • Fine low melting metal additives i.e., elemental metallic additives as distinct from metal oxides
  • Pb, Bi, In, Ga, Sn, and Zn and alloys of each with at least one other metal can be added to provide a contact at a lower temperature, or to widen the firing window.
  • Zinc is the preferred metal additive
  • silver is the preferred metal with which the metal additive is alloyed.
  • a zinc-silver alloy is most preferred.
  • a mixture of (a) glasses or a mixture of (b) glasses and crystalline additives or a mixture of (c) one or more crystalline additives can be used to formulate a glass component in the desired compositional range.
  • the goal is to reduce the contact resistance and improve the solar cell electrical performance.
  • second-phase crystalline materials such as Bi 2 O 3 , Sb 2 O 3 , Sb 2 O 5 , In 2 O 3 , Ga 2 O 3 , SnO, ZnO, Pb 3 O 4 , PbO, SiO 2 , ZrO 2 , Al 2 O 3 , B 2 O 3 , and Ta 2 O 5 may be added to the glass component to adjust contact properties.
  • Combinations and reaction products of the aforementioned oxides can also be suitable to design a glass component with desired characteristics.
  • low melting lead silicates either crystalline or glassy, formed by the reaction of PbO and SiO 2 such as 4PbO.SiO 2 , 3PbO.SiO 2 , 2PbO.SiO 2 , 3PbO.2SiO 2 , and PbO.SiO 2 , either singly or in mixtures can be used to formulate a glass component.
  • a second phase of lead silicates may optionally be used.
  • Other reaction products of the aforementioned oxides such as ZnO.SiO 2 and ZrO 2 .SiO 2 may also be used. However, the total amounts of the above oxides must fall within the ranges specified for various embodiments disclosed elsewhere herein.
  • the glass component contains no more than about 3 mol % of B 2 O 3 , preferably no more than about 1 mol % B 2 O 3 . Most preferably, the glass component contains no B 2 O 3 .
  • Oxides of tantalum and molybdenum reduce glass viscosity and surface tension of the glass during firing, facilitating better wetting of the wafer by the molten glass. Accordingly, up to about 10 mol % Ta 2 O 5 , and up to about 3 mol % MoO 3 can be included in the glass component.
  • compositions of the present invention may further comprise oxides of alkali metals, for example Na 2 O, K 2 O, and Li 2 O and combinations thereof.
  • the glass components of certain embodiments herein may contain from about 0.1 to about 15 mol % Na 2 O+K 2 O+Li 2 O, or more preferably from about 0.1 to about 5 mol % of those alkali metal oxides.
  • the glass in the front contact paste or ink plays many key roles in forming an efficient front contact silver-silicon interface.
  • the front contact paste glass corrodes the antireflective coating, typically made of silicon nitride (SiN x ) or titanium dioxide (TiO 2 ) to form fired through contacts to underlying Si.
  • the glass also takes part in a self-limiting interaction with Si to oxidize and dissolve a portion of Si into the glass as SiO 2 . Because the local concentration of SiO 2 increases the viscosity of the glass, this increase will eventually limit further dissolution of Si as SiO 2 , giving rise to a self-limiting interaction of the glass with Si to preserve the PN junction.
  • the glass also dissolves Ag metal into the glass, transports Ag ions to the silicon interface, and precipitates Ag from the glass to form beneficial Ag/Si islands at the interface. Finally, the glass serves to enhance densification of the silver paste to reduce bulk silver resistivity and enhances bonding (adhesion) between the silicon wafer and the fired (silver) paste.
  • the vehicle or carrier for most conductive compositions is typically a solution of a resin dissolved in a solvent and, frequently, a solvent solution containing both resin and a thixotropic agent.
  • the solvent usually boils from about 130° C. to about 350° C.
  • the most frequently used resin for this purpose is ethyl cellulose.
  • resins such as ethyl hydroxy ethyl cellulose, wood rosin, mixtures of ethyl cellulose and phenolic resins, polymethacrylates of lower alcohols and the monobutyl ether of ethylene glycol monoacetate can also be used.
  • terpenes such as alpha- or beta-terpineol or higher boiling alcohols such as Dowanol® (diethylene glycol monoethyl ether), or mixtures thereof with other solvents such as butyl Carbitol® (diethylene glycol monobutyl ether); dibutyl Carbitol® (diethylene glycol dibutyl ether), butyl Carbitol® acetate (diethylene glycol monobutyl ether acetate), hexylene glycol, Texanol® (2,2,4-trimethyl-1,3-pentanediol monoisobutyrate), as well as other alcohol esters, kerosene, and dibutyl phthalate.
  • Dowanol® diethylene glycol monoethyl ether
  • other solvents such as butyl Carbitol® (diethylene glycol monobutyl ether); dibutyl Carbitol® (diethylene glycol dibutyl ether
  • the vehicle can contain organometallic compounds, for example those based on nickel, phosphorus or silver, to modify the contact.
  • organometallic compounds for example those based on nickel, phosphorus or silver
  • Various combinations of these and other solvents can be formulated to obtain the desired viscosity and volatility requirements for each application.
  • Other dispersants, surfactants and rheology modifiers, which are commonly used in thick film paste formulations, may be included.
  • Products useful in the organic carrier may be obtained commercially under any of the following trademarks: Texanol® (Eastman Chemical Company, Kingsport, Tenn.); Dowanol® and Carbitol® (Dow Chemical Co., Midland, Mich.); Triton® (Union Carbide Division of Dow Chemical Co., Midland, Mich.), Thixatrol® (Elementis Company, Hightstown N.J.), and Diffusol® (Transene Co. Inc., Danvers, Mass.).
  • N-DIFFUSOL® is a stabilized liquid preparation containing an n-type diffusant with a diffusion coefficient similar to that of elemental phosphorus.
  • organic thixotropic agents is hydrogenated castor oil and derivatives thereof.
  • a thixotrope is not always necessary because the solvent/resin properties coupled with the shear thinning inherent in any suspension may alone be suitable in this regard.
  • wetting agents may be employed such as fatty acid esters, e.g., N-tallow-1,3-diaminopropane di-oleate; N-tallow trimethylene diamine diacetate; N-coco trimethylene diamine, beta diamines; N-oleyl trimethylene diamine; N-tallow trimethylene diamine; and N-tallow trimethylene diamine dioleate, and combinations thereof.
  • compositional ranges are preferred and it is not the intention to be limited to these ranges where one of ordinary skill in the art would recognize that these ranges may vary depending upon specific applications, specific components and conditions for processing and forming the end products.
  • the paste according to the present invention may be conveniently prepared on a three-roll mill.
  • the amount and type of carrier utilized are determined mainly by the final desired formulation viscosity, fineness of grind of the paste, and the desired wet print thickness.
  • the particulate inorganic solids are mixed with the carrier and dispersed with suitable equipment, such as a three-roll mill, to form a suspension, resulting in a composition for which the viscosity will be in the range of about 100 to about 500 kcps, preferably about 300 to about 400 kcps, at a shear rate of 9.6 sec ⁇ 1 as determined on a Brookfield viscometer HBT, spindle 14, measured at 25° C.
  • the aforementioned paste compositions may be used in a process to make a solar cell contact or other solar cell components.
  • the inventive method of making solar cell contacts comprises (1) applying a silver-containing paste to the silicon substrate, (2) drying the paste, and (3) firing the paste to sinter the metal and make contact to silicon.
  • the printed pattern of the paste is fired at a suitable temperature, such as about 650-950° C. furnace set temperature, or about 550-850° C. wafer temperature.
  • the furnace set temperature is about 750-930° C.
  • the paste is fired in air.
  • the antireflective SiN X layer is believed to be oxidized and corroded by the glass and Ag/Si islands are formed on reaction with the Si substrate, which are epitaxially bonded to silicon. Firing conditions are chosen to produce a sufficient density of Ag/Si islands on the silicon wafer at the silicon/paste interface, leading to a low resistivity, high efficiency, high-fill factor front contact and solar cell.
  • a typical ARC is made of a silicon compound such as silicon nitride, generically SiNx, such as Si 3 N 4 .
  • This layer acts as an insulator, which tends to increase the contact resistance. Corrosion of this ARC layer by the glass component is hence a necessary step in front contact formation.
  • the inventors herein have discovered that reducing the resistance between the silicon wafer and the paste is facilitated by the formation of epitaxial silver/silicon conductive islands at the interface. That is, the silver islands on silicon assume the same crystalline structure as is found in the silicon substrate. When such an epitaxial silver/silicon interface does not result, the resistance at that interface becomes unacceptably high.
  • the pastes and processes herein now make it possible to produce an epitaxial silver/silicon interface leading to a contact having low resistance under broad processing conditions—a minimum firing temperature as low as about 650° C., but which can be fired up to about 850° C. (wafer temperature).
  • the pastes herein can be fired in air.
  • the properties discussed herein are believed to depend on a variety of variables, including the glass composition, amount of glass in the paste, silver morphology, and firing conditions.
  • Several physical and chemical phenomena within the glass component must take place in order to form a front contact having low series resistance (R S ).
  • Optimization of front contact properties requires fine tuning of firing temperature and conditions because small changes in the temperature—temperature variations with in the PV cell, between cells, furnace-to-furnace, cell lot to cell lot—can have a large effect on the performance of a cell: It is believed that resistance is decreased and conductivity is increased by increasing the number and quality of contacts between silver and silicon (that is, epitaxial silver-silicon islands) provided the interlayer glass thickness is minimized.
  • a solar cell contact according to the present invention may be produced by applying any conductive paste disclosed herein to a substrate, for example by screen-printing, to a desired wet thickness, e.g., from about 40 to about 80 microns.
  • Automatic screen-printing techniques can be employed using a 200-325 mesh screen.
  • the printed pattern is then dried at 200° C. or less, preferably at about 120° C. for about 5-15 minutes before firing.
  • the dry printed pattern can be fired for as little as 1 second up to about 5 minutes at peak temperature, in a belt conveyor furnace in air. During firing, the glass is fused and the metal is sintered.
  • Nitrogen (N 2 ) or another inert atmosphere may be used if desired.
  • the firing is generally according to a temperature profile that will allow burnout of the organic matter at about 300° C. to about 550° C., a period of peak furnace set temperature of about 650° C. to about 1000° C., lasting as little as about 1 second, although longer firing times as high as 1, 3, or 5 minutes are possible when firing at lower temperatures.
  • a three-zone firing profile may be used, with a belt speed of about 1 to about 4 meters (40-160 inches) per minute, preferably 3 meters/minute (about 120 inches/minute).
  • zone 1 is about 7 inches (18 cm) long
  • zone 2 is about 16 inches (40 cm) long
  • zone 3 is about 7 inches (18 cm) long.
  • each successive zone is typically higher than the previous, for example, 700-790° C. in zone 1,800-850° C. in zone 2, and 800-970° C. in zone 3.
  • firing arrangements having more than 3 zones are envisioned by the present invention, including 4, 5, 6, or 7, zones or more, each with zone lengths of about 5 to about 20 inches and firing temperatures of 650 to 1000° C.
  • back surface field aluminum paste (Ferro CN53-038) and backside silver paste (Ferro CN33-451) were used for the back contact.
  • the front contact pattern was printed using a 280 mesh screen with 100 ⁇ m openings for finger lines and with about a 2.8 mm spacing between the lines.
  • Glass compositions used in the exemplary pastes were prepared by known glass-making techniques, and are presented in Table 4, the properties of those glass compositions are in Table 5, and the paste compositions are in Table 6. Samples were dried at about 100 to about 150° C. for about 3 to about 15 minutes after printing the front contacts.
  • the printed wafers were co-fired using a 3-zone infrared (IR) belt furnace with a belt speed of about 3 meters (120′′) per minute, with temperature settings of 780° C., 810° C., and 930° C. for the three zones.
  • the zones were 7′′, 16′′, and 7′′ long, respectively.
  • the fired finger width for most samples was about 120 to about 170 ⁇ m, and the fired thickness was about 10 to 15 ⁇ m.
  • Tg stands for glass transition temperature
  • TCE thermal coefficient of expansion over the range of 25-300° C.
  • TABLE 5 Glass Properties Glass Composition Glass properties A B C D E Tg, ° C. 498 404 390 — 404 TCE, (25-300° C.) ⁇ 10 ⁇ 7 /° C. 68 105 98 105 97 Density, gm/cc 5.8 6.7 6.5 6.8 6.3
  • Paste formulations in Table 6 were made using organic vehicles V131 and V132, commercially available from Ferro Corporation, Cleveland, Ohio. All amounts in Table 6 are in weight percent of the paste, including the solids portion and the organics portion. TABLE 6 Paste Formulations Paste Ingredients in wt % 1 2 3 4 5 6 Glass component A B C D E B Glass component in paste 4.5 4.5 4.5 4.5 4.5 4.5 4.5 Silver flake, SF-23 73.0 Silver powder, Ag3000-1 68 68 68 68 68 68 68 Colloidal silver, RDAGCOLB 12.4 12.4 12.4 12.4 5.0 Vehicle V131 0.6 6.5 0.6 0.6 0.6 17.5 Vehicle V132 14.5 8.6 14.5 14.5 14.5 14.5
  • the front contact pastes in Table 6 were fired according to the firing profile disclosed herein.
  • the electrical properties of the resultant solar cells are set forth in Table 7.
  • Isc short circuit current, measured at zero output voltage
  • Voc open circuit voltage measured at zero output current
  • R S and R sh were previously defined.

Abstract

Formulations and methods of making solar cells are disclosed. In general, the invention presents a solar cell contact made from a mixture wherein the mixture comprises a solids portion and an organics portion, wherein the solids portion comprises from about 85 to about 99 wt % of silver, and from about 1 to about 15 wt % of a glass component wherein the glass component comprises from about 15 to about 75 mol % PbO, and from about 5 to about 50 mol % SiO2, and preferably with no B2O3.

Description

    FIELD OF THE INVENTION
  • This invention relates to a paste composition and a method of making contacts for solar cells as well as other related components used in fabricating photovoltaic cells.
  • BACKGROUND
  • Solar cells are generally made of semiconductor materials, such as silicon (Si), which convert sunlight into useful electrical energy. Solar cells are, in general, made of thin wafers of Si in which the required PN junction is formed by diffusing phosphorus (P) from a suitable phosphorus source into a P-type Si wafer. The side of silicon wafer on which sunlight is incident is in general coated with an anti-reflective coating (ARC) to prevent reflective loss of incoming sunlight, and thus to increase the efficiency of the solar cell. A two dimensional electrode grid pattern known as a front contact makes a connection to the N-side of silicon, and a coating of aluminum (Al) on the other side (back contact) makes connection to the P-side of the silicon. These contacts are the electrical outlets from the PN junction to the outside load.
  • SUMMARY OF THE INVENTION
  • The present invention provides glass compositions for use in front contact paste materials that provide low series resistance (Rs) and high shunt resistance (Rsh) to give high performance solar cells, as measured by efficiency (η) and fill factor (FF). Generally, the present invention includes a solar cell contact made from a mixture of ingredients, wherein the mixture comprises a solids portion and an organics portion. The solids portion comprises from about 85 to about 99 wt % of a metal component preferably silver, and from about 1 to about 15 wt % of a glass component. The glass component comprises from about 15 to about 75 mol % PbO, and from about 5 to about 50 mol % SiO2. The metal component comprises silver flakes, silver power, colloidal silver, and/or phosphorus-coated silver powder. Methods for making solar cells using the above ingredients and amounts are also envisioned.
  • The compositions and methods of the present invention overcome the drawbacks of the prior art by facilitating optimized interaction, bonding, and contact formation between front contact components, typically Ag and Si, through the glass medium. A conductive paste containing glass and silver is printed on a silicon substrate, and fired to fuse the glass and sinter the metal therein. Upon firing, Ag/Si conductive islands are formed providing conductive bridges between bulk paste and silicon wafer. Leaded glasses allow low firing temperatures owing to their excellent flow characteristics relatively at low temperatures.
  • The foregoing and other features of the invention are hereinafter more fully described and particularly pointed out in the claims, the following description setting forth in detail certain illustrative embodiments of the invention, these being indicative, however, of but a few of the various ways in which the principles of the present invention may be employed.
  • DETAILED DESCRIPTION
  • The foregoing and other features of the invention are hereinafter more fully described. Silver- and glass-containing thick film pastes are used to make front contacts for silicon-based solar cells to collect current generated by exposure to light. The cell electrical performance as measured by cell efficiency (η) and fill factor (FF) is strongly affected by the microstructure and the electrical properties of the silver/silicon interface. The electrical properties of the solar cell are also characterized by RS and RSh. The composition and microstructure of the front contact interface largely determine RS. While the paste is generally applied by screen-printing, methods such as extrusion, pad printing, and hot melt printing may be used. Solar cells with screen-printed front contacts are fired to relatively low temperatures (550° C. to 850° C. wafer temperature; firing furnace set temperatures of 650° C. to 1000° C.) to form a low resistance contact between the N-side of a phosphorus doped silicon wafer and a silver based paste. The front contact paste, before firing, contains a silver-containing compound in one or more forms (powder, flake, colloid) and a glass component, and/or other additives. The glass component contains at least PbO and SiO2.
  • The sequence and rates of reactions occurring as a function of temperature are factors in forming the low resistance contact between the silver paste and silicon wafer. The interface structure consists of multiple phases: substrate silicon, Ag/Si islands, Ag precipitates within the insulating glass layer, and bulk silver. The glass forms a nearly continuous layer between the silicon interface and the bulk silver.
  • Solar cells include a front contact made from pastes or inks consisting of a mixture of ingredients. These mixtures, prior to firing, comprise a solids portion and an organics portion. The solids portion comprises a conductive metal and a glass component. Up to about 30 wt % of other (i.e., inorganic) additives, preferably up to about 25 wt % and more preferably up to about 10 wt %, may be included as needed. The solids portion for the paste composition according to the present invention comprises: (a) a metal component comprising silver, an alloy of silver, or an oxide of silver, or a silver compound (i.e., silver component), from about 85 to about 99 wt %, preferably from about 88 to about 95 wt % of the solids portion; and, (b) a glass component, from about 1 to about 15 wt %, preferably about 2 to about 9 wt %, and more preferably from about 3 to about 8 wt % of the solids portion. The organics portion of the pastes herein comprises (a) at least about 80 wt % organic solvent; (b) up to about 15 wt % of a thermoplastic resin; (c) up to about 4 wt % of a thixotropic agent; and (d) up to about 2 wt % of a wetting agent. The use of more than one solvent, resin, thixotrope, and wetting agent is also envisioned. Although a variety of weight ratios of the solids portion to the organics portion are envisioned, one embodiment includes a weight ratio of the solids portion to the organics portion from about 20:1 to about 1:20. In preferred embodiments the weight ratio is from about 15:1 to about 1:15, and most preferably the ratio is about 10:1 to about 1:10. Each of the major ingredient types (glass, metal, organics) is detailed hereinbelow.
  • Paste Glasses. The glass component comprises, prior to firing, one or more glass compositions. Each glass composition comprises oxide frits including, at a minimum, PbO and SiO2. Zinc oxide (ZnO) may replace a portion of the PbO in the glass component herein. In particular, in various embodiments of the present invention, a glass composition comprises the ingredients of Table 1. When at least two glass compositions are present, the selection of their makeup and proportions has an effect on the quality of the solar cell contact. The use of a (first) glass composition containing a high proportion of ZnO (e.g., up to about 35 mol %) provides minimum penetration into silicon. Such a glass composition is exemplified by embodiments V and VII in Table 3, and composition A in Table 4. On the other hand the use of a (second) zinc-free glass composition with high proportion of PbO (e.g., up to about 75 mol %) provides more penetration into silicon. Such a glass composition is exemplified by embodiments VI, VIII, IX, X, and XI in Table 3, and compositions B, C, D, and E in Table 4. Regardless of the number of glass compositions used, the total content of PbO and SiO2 in the glass component overall will fall within the range of about 15 to about 75 mol % PbO, and from about 5 to about 50 mol % SiO2. Varying proportions of the first and second glass compositions can be used in forming a solar cell contact to control, the extent of penetration into silicon, and hence the resultant solar cell properties. For example, within the glass component, the first and second glass compositions may be present in a weight ratio of about 1:20 to about 20:1, and preferably about 1:3 to about 3:1. The glass component preferably contains no cadmium or oxides of cadmium. Further, a portion of PbO can be replaced by Bi2O3 to provide a glass composition used in making a solar cell within the scope of the present invention. For example, about 1 to about 30 mol % of Bi2O3 can be used.
  • Other embodiments may further comprise Al2O3, Ta2O5, Sb2O5, ZrO2, HfO2, In2O3, Ga2O3, Y2O3, Yb2O3 and combinations thereof. An entry such as Y2O3 means that Y2O3 or Yb2O3 or a combination of the two is present in the specified amount. The embodiments set forth in Table 1, may in addition include the following oxide frit ingredients as shown in Table 2.
    TABLE 1
    Oxide frit ingredients in mole percent of the glass component.
    Glass Composition
    III (more
    Ingredient I (broad) II (preferred) preferred)
    PbO 15-75 25-66 30-64
    SiO2  5-50 15-40 20-35
    ZnO  0-50  5-35 20-33
    PbO + ZnO 15-80
  • TABLE 2
    Additional oxide frit ingredients in embodiments of
    Table 1 in mole percent of the glass component.
    Glass Composition
    III (more
    Ingredient I (broad) II (preferred) preferred)
    Al2O3   0-15 1-11 2-10
    Ta2O5 0.1-10 0.1-3   0.2-2  
    Sb2O5 0.1-10 0.1-3   0.2-2  
    ZrO2 0.1-10 0.5-5   1-2 
    P2O5 0.1-8  1-5  2-4 
    MoO3 0.1-3 
    HfO2 + In2O3 + Ga2O3 0.1-15 1-10 3-8 
    Y2O3 + Yb2O3 0.1-10 1-8  3-8 
  • A given embodiment need not contain all frit ingredients as noted in Table 2, but various combinations are possible. Other specific embodiments may contain various amounts of the aforementioned ingredients in mole percent as shown in Table 3.
    TABLE 3
    Further embodiments of glass compositions in the glass
    component in mole percent of the glass component.
    Glass Composition
    Ingredient IV V VI VII VIII IX X XI
    PbO 58-64 25-40  58-64 26-34  58-66  58-66 58-70  58-66
    SiO2 25-31 20-31  22-32 27-33  20-31  20-31 20-31  20-32
    ZnO  0-10 5-34 27-33
    Al2O3  2-11 4-10  1-10  5-11  1-9  1-9  1-11  1-9
    Ta2O5 0-2  0.1-2   0.1-2 
    P2O5 0.1-4 
    HfO2 + In2O3 + Ga2O3 0.1-8  
    ZrO2 0.1-5  0.1-2   0.1-4 
    B2O3  0-3
    Sb2O5 0.1-3 
  • Silver Component. The source of the silver in the silver component can be one or more fine powders of silver metal, or alloys of silver. A portion of the silver can be added as silver oxide (Ag2O) or as silver salts such as AgCl, AgNO3 or AgOOCCH3 (silver acetate). Additionally, the silver may be coated with various materials such as phosphorus. Alternately, the silver oxide can be dissolved in the glass during the glass melting/manufacturing process. The silver particles used in the paste may be spherical, flaked, or provided in a colloidal suspension, and combinations of the foregoing may be used. Any of the aforementioned silver sources may be used to contribute silver to the silver component of the solar cell contacts herein. For example the solids portion of the paste may comprise about 80 to about 99 wt % spherical silver particles or about 75 to about 90 wt % silver particles and about 1 to about 10 wt % silver flakes. Another alternative composition of the solids portion comprises about 75 to about 90 wt % silver flakes and about 1 to about 10 wt % of colloidal silver. In general, the solids portion may comprise about 60 to about 95 wt % of silver powder or silver flakes and about 0.1 to about 20 wt % of colloidal silver. Suitable commercial examples of silver particles are spherical silver powder Ag3000-1, silver flakes SF-23, and colloidal silver suspension RDAGCOLB, all commercially available from Ferro Corporation, Cleveland, Ohio.
  • Inorganic/Other Additives. Phosphorus can be added to the paste in a variety of ways to reduce the resistance of the front contacts. For example, certain glasses can be modified with P2O5 in the form of a powdered or fritted oxide, or phosphorus can be added to the paste by way of phosphate esters and other organo-phosphorus compounds. More simply, phosphorus can be added as a coating to silver particles prior to making a paste. In such case, prior to pasting, the silver particles are mixed with liquid phosphorus and a solvent. For example, a blend of from about 85 to about 95 wt % silver particles, from about 5 to about 15 wt % solvent and from about 0.5 to about 10 wt % liquid phosphorus is mixed and the solvent evaporated. Phosphorus coated silver particles help ensure intimate mixing of phosphorus and silver in the inventive pastes.
  • Other additives such as fine silicon or carbon powder, or both, can be added to the paste to control the silver reduction and precipitation reaction. The silver precipitation at the interface or in the bulk glass, can also be controlled by adjusting the firing atmosphere (e.g., firing in flowing N2 or N2/H2/H2O mixtures). Fine low melting metal additives (i.e., elemental metallic additives as distinct from metal oxides) such as Pb, Bi, In, Ga, Sn, and Zn and alloys of each with at least one other metal can be added to provide a contact at a lower temperature, or to widen the firing window. Zinc is the preferred metal additive, and silver is the preferred metal with which the metal additive is alloyed. A zinc-silver alloy is most preferred.
  • A mixture of (a) glasses or a mixture of (b) glasses and crystalline additives or a mixture of (c) one or more crystalline additives can be used to formulate a glass component in the desired compositional range. The goal is to reduce the contact resistance and improve the solar cell electrical performance. For example, second-phase crystalline materials such as Bi2O3, Sb2O3, Sb2O5, In2O3, Ga2O3, SnO, ZnO, Pb3O4, PbO, SiO2, ZrO2, Al2O3, B2O3, and Ta2O5 may be added to the glass component to adjust contact properties. Combinations and reaction products of the aforementioned oxides can also be suitable to design a glass component with desired characteristics. For example, low melting lead silicates, either crystalline or glassy, formed by the reaction of PbO and SiO2 such as 4PbO.SiO2, 3PbO.SiO2, 2PbO.SiO2, 3PbO.2SiO2, and PbO.SiO2, either singly or in mixtures can be used to formulate a glass component. A second phase of lead silicates may optionally be used. Other reaction products of the aforementioned oxides such as ZnO.SiO2 and ZrO2.SiO2 may also be used. However, the total amounts of the above oxides must fall within the ranges specified for various embodiments disclosed elsewhere herein.
  • The inventors herein have found that boron content (as B2O3) has an effect on contact formation. The presence of high amounts (>10 mol %) of B2O3 can cause poor contact formation, especially contacts with high RS. Accordingly, in a preferred embodiment, the glass component contains no more than about 3 mol % of B2O3, preferably no more than about 1 mol % B2O3. Most preferably, the glass component contains no B2O3.
  • The inventors herein have also found that certain glasses containing oxides of hafnium (HfO2), indium (In2O3), and/or gallium (Ga2O3) increase both the size and quantity of the conductive Ag/Si islands. Hence, up to 15 mol % of HfO2 and/or In2O3 and/or Ga2O3 may be included in the glass component.
  • Oxides of tantalum and molybdenum reduce glass viscosity and surface tension of the glass during firing, facilitating better wetting of the wafer by the molten glass. Accordingly, up to about 10 mol % Ta2O5, and up to about 3 mol % MoO3 can be included in the glass component.
  • Kinetics of silver dissolution and precipitation from the glass compositions can be significantly altered by the presence of alkali metal oxides. In that regard, -the compositions of the present invention may further comprise oxides of alkali metals, for example Na2O, K2O, and Li2O and combinations thereof. In particular, the glass components of certain embodiments herein may contain from about 0.1 to about 15 mol % Na2O+K2O+Li2O, or more preferably from about 0.1 to about 5 mol % of those alkali metal oxides.
  • The glass in the front contact paste or ink plays many key roles in forming an efficient front contact silver-silicon interface. The front contact paste glass corrodes the antireflective coating, typically made of silicon nitride (SiNx) or titanium dioxide (TiO2) to form fired through contacts to underlying Si. The glass also takes part in a self-limiting interaction with Si to oxidize and dissolve a portion of Si into the glass as SiO2. Because the local concentration of SiO2 increases the viscosity of the glass, this increase will eventually limit further dissolution of Si as SiO2, giving rise to a self-limiting interaction of the glass with Si to preserve the PN junction. The glass also dissolves Ag metal into the glass, transports Ag ions to the silicon interface, and precipitates Ag from the glass to form beneficial Ag/Si islands at the interface. Finally, the glass serves to enhance densification of the silver paste to reduce bulk silver resistivity and enhances bonding (adhesion) between the silicon wafer and the fired (silver) paste.
  • Organic Vehicle. The vehicle or carrier for most conductive compositions is typically a solution of a resin dissolved in a solvent and, frequently, a solvent solution containing both resin and a thixotropic agent. The solvent usually boils from about 130° C. to about 350° C. The most frequently used resin for this purpose is ethyl cellulose. However, resins such as ethyl hydroxy ethyl cellulose, wood rosin, mixtures of ethyl cellulose and phenolic resins, polymethacrylates of lower alcohols and the monobutyl ether of ethylene glycol monoacetate can also be used. The most widely used solvents for thick film applications are terpenes such as alpha- or beta-terpineol or higher boiling alcohols such as Dowanol® (diethylene glycol monoethyl ether), or mixtures thereof with other solvents such as butyl Carbitol® (diethylene glycol monobutyl ether); dibutyl Carbitol® (diethylene glycol dibutyl ether), butyl Carbitol® acetate (diethylene glycol monobutyl ether acetate), hexylene glycol, Texanol® (2,2,4-trimethyl-1,3-pentanediol monoisobutyrate), as well as other alcohol esters, kerosene, and dibutyl phthalate. The vehicle can contain organometallic compounds, for example those based on nickel, phosphorus or silver, to modify the contact. Various combinations of these and other solvents can be formulated to obtain the desired viscosity and volatility requirements for each application. Other dispersants, surfactants and rheology modifiers, which are commonly used in thick film paste formulations, may be included. Products useful in the organic carrier may be obtained commercially under any of the following trademarks: Texanol® (Eastman Chemical Company, Kingsport, Tenn.); Dowanol® and Carbitol® (Dow Chemical Co., Midland, Mich.); Triton® (Union Carbide Division of Dow Chemical Co., Midland, Mich.), Thixatrol® (Elementis Company, Hightstown N.J.), and Diffusol® (Transene Co. Inc., Danvers, Mass.). N-DIFFUSOL® is a stabilized liquid preparation containing an n-type diffusant with a diffusion coefficient similar to that of elemental phosphorus.
  • Among commonly used organic thixotropic agents is hydrogenated castor oil and derivatives thereof. A thixotrope is not always necessary because the solvent/resin properties coupled with the shear thinning inherent in any suspension may alone be suitable in this regard. Furthermore, wetting agents may be employed such as fatty acid esters, e.g., N-tallow-1,3-diaminopropane di-oleate; N-tallow trimethylene diamine diacetate; N-coco trimethylene diamine, beta diamines; N-oleyl trimethylene diamine; N-tallow trimethylene diamine; and N-tallow trimethylene diamine dioleate, and combinations thereof.
  • It should be kept in mind that the foregoing compositional ranges are preferred and it is not the intention to be limited to these ranges where one of ordinary skill in the art would recognize that these ranges may vary depending upon specific applications, specific components and conditions for processing and forming the end products. The paste according to the present invention may be conveniently prepared on a three-roll mill. The amount and type of carrier utilized are determined mainly by the final desired formulation viscosity, fineness of grind of the paste, and the desired wet print thickness. In preparing compositions according to the present invention, the particulate inorganic solids are mixed with the carrier and dispersed with suitable equipment, such as a three-roll mill, to form a suspension, resulting in a composition for which the viscosity will be in the range of about 100 to about 500 kcps, preferably about 300 to about 400 kcps, at a shear rate of 9.6 sec−1 as determined on a Brookfield viscometer HBT, spindle 14, measured at 25° C.
  • Printing and Firing of the Paste. The aforementioned paste compositions may be used in a process to make a solar cell contact or other solar cell components. The inventive method of making solar cell contacts comprises (1) applying a silver-containing paste to the silicon substrate, (2) drying the paste, and (3) firing the paste to sinter the metal and make contact to silicon. The printed pattern of the paste is fired at a suitable temperature, such as about 650-950° C. furnace set temperature, or about 550-850° C. wafer temperature. Preferably, the furnace set temperature is about 750-930° C., and the paste is fired in air. During the firing the antireflective SiNX layer is believed to be oxidized and corroded by the glass and Ag/Si islands are formed on reaction with the Si substrate, which are epitaxially bonded to silicon. Firing conditions are chosen to produce a sufficient density of Ag/Si islands on the silicon wafer at the silicon/paste interface, leading to a low resistivity, high efficiency, high-fill factor front contact and solar cell.
  • A typical ARC is made of a silicon compound such as silicon nitride, generically SiNx, such as Si3N4. This layer acts as an insulator, which tends to increase the contact resistance. Corrosion of this ARC layer by the glass component is hence a necessary step in front contact formation. The inventors herein have discovered that reducing the resistance between the silicon wafer and the paste is facilitated by the formation of epitaxial silver/silicon conductive islands at the interface. That is, the silver islands on silicon assume the same crystalline structure as is found in the silicon substrate. When such an epitaxial silver/silicon interface does not result, the resistance at that interface becomes unacceptably high. Until now, the processing conditions to achieve a low resistance epitaxial silver/silicon interface have been very narrow and difficult to achieve. The pastes and processes herein now make it possible to produce an epitaxial silver/silicon interface leading to a contact having low resistance under broad processing conditions—a minimum firing temperature as low as about 650° C., but which can be fired up to about 850° C. (wafer temperature). The pastes herein can be fired in air.
  • The formation of a low resistance front contact on a silicon solar cell is technically challenging. Both the interactions among paste constituents (silver metal, glass, additives, organics), and the interactions between paste constituents and silicon substrate are complex. However the interaction between paste constituents and silicon substrate must be controlled. The rapid furnace processing makes all the reactions highly dependent on kinetics. Further, the reactions of interest must take place within a very narrow region (<0.5 micron) of silicon in order preserve the P-N junction.
  • The properties discussed herein are believed to depend on a variety of variables, including the glass composition, amount of glass in the paste, silver morphology, and firing conditions. Several physical and chemical phenomena within the glass component must take place in order to form a front contact having low series resistance (RS). Optimization of front contact properties requires fine tuning of firing temperature and conditions because small changes in the temperature—temperature variations with in the PV cell, between cells, furnace-to-furnace, cell lot to cell lot—can have a large effect on the performance of a cell: It is believed that resistance is decreased and conductivity is increased by increasing the number and quality of contacts between silver and silicon (that is, epitaxial silver-silicon islands) provided the interlayer glass thickness is minimized. If the paste is fired at too low a temperature, a high series resistance results because silver and silicon fail to react sufficiently at the Ag/Si interface. Conversely, if the paste is fired at too high a temperature, the PN junction in the silicon wafer is affected by excessive silver diffusion into silicon (and away from the interface), thereby reducing cell performance due to reduced Rsh. A high Rsh is needed for good cell performance.
  • Method of Front Contact Production. A solar cell contact according to the present invention may be produced by applying any conductive paste disclosed herein to a substrate, for example by screen-printing, to a desired wet thickness, e.g., from about 40 to about 80 microns. Automatic screen-printing techniques can be employed using a 200-325 mesh screen. The printed pattern is then dried at 200° C. or less, preferably at about 120° C. for about 5-15 minutes before firing. The dry printed pattern can be fired for as little as 1 second up to about 5 minutes at peak temperature, in a belt conveyor furnace in air. During firing, the glass is fused and the metal is sintered.
  • Nitrogen (N2) or another inert atmosphere may be used if desired. The firing is generally according to a temperature profile that will allow burnout of the organic matter at about 300° C. to about 550° C., a period of peak furnace set temperature of about 650° C. to about 1000° C., lasting as little as about 1 second, although longer firing times as high as 1, 3, or 5 minutes are possible when firing at lower temperatures. For example a three-zone firing profile may be used, with a belt speed of about 1 to about 4 meters (40-160 inches) per minute, preferably 3 meters/minute (about 120 inches/minute). In a preferred example, zone 1 is about 7 inches (18 cm) long, zone 2 is about 16 inches (40 cm) long, and zone 3 is about 7 inches (18 cm) long. The temperature in each successive zone is typically higher than the previous, for example, 700-790° C. in zone 1,800-850° C. in zone 2, and 800-970° C. in zone 3. Naturally, firing arrangements having more than 3 zones are envisioned by the present invention, including 4, 5, 6, or 7, zones or more, each with zone lengths of about 5 to about 20 inches and firing temperatures of 650 to 1000° C.
  • Experimental Examples: Polycrystalline silicon wafers, 12.5 cm×12.5 cm, thickness 250-300 μm, were coated with a silicon nitride antireflective coating. The sheet resistivity of these wafers was about 1 Ω-cm.
  • Commercially available back surface field aluminum paste (Ferro CN53-038) and backside silver paste (Ferro CN33-451) were used for the back contact. The front contact pattern was printed using a 280 mesh screen with 100 μm openings for finger lines and with about a 2.8 mm spacing between the lines. Glass compositions used in the exemplary pastes were prepared by known glass-making techniques, and are presented in Table 4, the properties of those glass compositions are in Table 5, and the paste compositions are in Table 6. Samples were dried at about 100 to about 150° C. for about 3 to about 15 minutes after printing the front contacts. The printed wafers were co-fired using a 3-zone infrared (IR) belt furnace with a belt speed of about 3 meters (120″) per minute, with temperature settings of 780° C., 810° C., and 930° C. for the three zones. The zones were 7″, 16″, and 7″ long, respectively. The fired finger width for most samples was about 120 to about 170 μm, and the fired thickness was about 10 to 15 μm.
  • Electrical performance of the solar cells was measured with a solar tester, Model 91193-1000, Oriel Instrument Co., Stratford, Conn., under AM 1.5 sun conditions, in accordance with ASTM G-173-03. The results of this electrical testing are presented in Table 7.
    TABLE 4
    Exemplary Glass Compositions
    Glass
    mole % A B C D E
    PbO 31.3 61.6 61.5 58.9 61.9
    ZnO 30.0
    SiO2 29.8 30.3 27.2 28.7 30.1
    Al2O3 8.0 3.3 5.6 7.7
    B2O3 2.4
    Ta2O5 0.9
    ZrO2 1.6 2.0
    P2O5 3.3
    Sb2O5 1.4
    Ga2O3 8.0
    HfO2 4.8
  • Properties of the glass compositions A-E are set forth in the following Table 5. Tg stands for glass transition temperature; TCE is thermal coefficient of expansion over the range of 25-300° C.
    TABLE 5
    Glass Properties
    Glass Composition
    Glass properties A B C D E
    Tg, ° C. 498 404 390 404
    TCE, (25-300° C.) × 10−7/° C. 68 105 98 105 97
    Density, gm/cc 5.8 6.7 6.5 6.8 6.3
  • Paste formulations in Table 6 were made using organic vehicles V131 and V132, commercially available from Ferro Corporation, Cleveland, Ohio. All amounts in Table 6 are in weight percent of the paste, including the solids portion and the organics portion.
    TABLE 6
    Paste Formulations
    Paste
    Ingredients in wt % 1 2 3 4 5 6
    Glass component A B C D E B
    Glass component in paste 4.5 4.5 4.5 4.5 4.5 4.5
    Silver flake, SF-23 73.0
    Silver powder, Ag3000-1 68 68 68 68 68
    Colloidal silver, RDAGCOLB 12.4 12.4 12.4 12.4 12.4 5.0
    Vehicle V131 0.6 6.5 0.6 0.6 0.6 17.5
    Vehicle V132 14.5 8.6 14.5 14.5 14.5
  • The front contact pastes in Table 6 were fired according to the firing profile disclosed herein. The electrical properties of the resultant solar cells are set forth in Table 7.
    TABLE 7
    Properties of Solar cells made with front contact pastes of Table 6.
    Paste
    1 2 3 4 5 6
    Glass
    A B C D E B
    Isc, A 4.73 4.93 4.73 4.83 4.72 4.89
    Voc, mV 597 605 601 602 598 600
    Efficiency, % 13.9 14.7 14.1 14.3 11.0 14.1
    Fill Factor, % 76.5 77.2 76.1 76.6 61.1 75.2
    Rs, mΩ 8.5 8.1 8.8 8.8 21.7 8.8
    Rsh, Ω 31.7 29 20 38 22.3 8.0
  • Isc means short circuit current, measured at zero output voltage; Voc means open circuit voltage measured at zero output current; RS and Rsh were previously defined.
  • Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and illustrative example shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general invention concept as defined by the appended claims and their equivalents.

Claims (29)

1. A solar cell contact made from a mixture wherein the mixture comprises:
a. a solids portion and
b. an organics portion,
c. wherein the solids portion comprises
i. from about 85 to about 99 wt % of a silver component, and
ii. from about 1 to about 15 wt % of a glass component
iii. wherein the glass component comprises
a. from about 15 to about 75 mol % PbO,
b. from about 5 to about 50 mol % SiO2, and
c. no B2O3.
2. The solar cell contact of claim 1 wherein the weight ratio of the solids portion to the organics portion is from about 20:1 to about 1:20.
3. The solar cell contact of claim 1 wherein the glass component further comprises about 1 to about 30 mol % Bi2O3.
4. The solar cell contact of claim 1 wherein the glass component further comprises about 0.1 to about 15 mol % Al2O3.
5. The solar cell contact of claim 4 wherein the glass component further comprises about 0.1 to about 10 mol % Ta2O5.
6. The solar cell contact of claim 5 wherein the glass component further comprises about 0.1 to about 10 mol % ZrO2.
7. The solar cell contact of claim 6 wherein the glass component further comprises about 0.1 to about 8 mol % P2O5.
8. The solar cell contact of claim 1 wherein the glass component further comprises about 0.1 to about 15 mol % HfO2+In2O3+Ga2O3.
9. The solar cell contact of claim 1 wherein the glass component further comprises about 0.1 to about 10 mol % Y2O3+Yb2O3.
10. The solar cell contact of claim 4 wherein the glass component further comprises about 0.1 to about 15 mol % HfO2.
11. The solar cell contact of claim 4 wherein the glass component further comprises about 0.1 to about 10 mol % ZrO2.
12. The solar cell contact of claim 11 wherein the glass component further comprises about 0.1 to about 8 mol % P2O5.
13. The solar cell contact of claim 4 wherein the glass component further comprises about 0.1 to about 3 mol % B2O3.
14. The solar cell contact of claim 13 wherein the glass component further comprises about 0.1 to about 10 mol % Sb2O5.
15. The solar cell contact of claim 14 wherein the glass component further comprises about 0.1 to about 10 mol % ZrO2.
16. The solar cell contact of claim 4 wherein the glass component comprises:
a. about 26 to about 34 mol % PbO,
b. about 27 to about 33 mol % SiO2,
c. about 5 to about 11 mol % A12O3,
d. about 0.1 to about 2 mol % Ta2O5,
e. and further comprises about 27 to about 33 mol % ZnO.
17. The solar cell contact of claim 4 wherein the glass component further comprises about 0.1 to about 3 mol % MoO3.
18. The solar cell contact of claim 1 wherein the solids portion further comprises a crystalline additive selected from the group consisting of Bi2O3, Sb2O3, In2O3, Ga2O3, SnO, ZnO, Pb3O4, PbO, SiO2, ZrO2, Al2O3, B2O3, Ta2O5, 4PbO.SiO2, 3PbO.SiO2, 2PbO.SiO2, 3PbO.2SiO2, PbO.SiO2, ZnO.SiO2, and ZrO2.SiO2, and reaction products thereof and combinations thereof.
19. The solar cell contact of claim 1 wherein the solids portion comprises about 60 to about 95 wt % of flaked silver or powdered silver, and about 0.1 to about 20 wt % of colloidal silver.
20. The solar cell contact of claim 1 wherein the silver component comprises silver selected from the group consisting of present as flakes, powder, or colloidal particles of silver, wherein the solids portion further comprises phosphorus, at least a portion of which is present as a coating on at least a portion of the silver flakes, powder or colloidal particles.
21. The solar cell contact of claim 1 wherein the silver component contains a compound selected from the group consisting of an oxide of silver or a salt of silver, or combinations thereof.
22. The solar cell contact of claim 1 wherein the solids portion further comprises about 0.5 to about 25 wt % of a first metal selected from the group consisting of Pb, Bi, Zn, In, Ga, and Sb and alloys thereof with at least one second metal.
23. The solar cell contact of claim 22 wherein the at least one second metal is silver.
24. The solar cell contact of claim 22 wherein the first metal is zinc.
25. The solar cell contact of claim 24 wherein the at least one second metal is silver.
26. The solar cell contact of claim 1 wherein the glass component comprises a first glass composition and a second glass composition, wherein
a. the first glass composition comprises:
i. about 26 to about 34 mol % PbO,
ii. about 27 to about 33 mol % SiO2,
iii. about 20 to about 33 mol % ZnO, and
iv. about 5 to about 11 mol % Al2O3,
b. the second glass composition comprises:
i. about 58 to about 70 mol % PbO and
ii. about 5 to about 50 mol % SiO2,
c. wherein the weight ratio between the first and second glass compositions is from about 1:20 to about 20:1.
27. The solar cell contact of claim 26 wherein the weight ratio between the first and second glass compositions is from about 1:3 to about 3:1.
28. A process for making a solar cell contact comprising:
a. applying a silver-containing paste on an antireflective silicon wafer and
b. firing the paste to form a coating,
c. wherein the paste comprises a solids portion and an organics portion, the solids portion comprising:
i. about 85 to about 99 wt % silver, and
ii. about 1 to about 15 wt % of a glass component;
d. wherein the glass component comprises
i. about 15% to 75 mol % PbO,
ii. about 5% to about 50 mol % SiO2, and
iii. less than about 3 mol % B2O3.
29. The process of claim 28 wherein the paste is fired at a furnace set temperature of about 650° C. to about 1000° C. for about 1 second to about 5 minutes.
US10/988,208 2004-11-12 2004-11-12 Method of making solar cell contacts Abandoned US20060102228A1 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
US10/988,208 US20060102228A1 (en) 2004-11-12 2004-11-12 Method of making solar cell contacts
AU2005307036A AU2005307036B2 (en) 2004-11-12 2005-10-14 Method of making solar cell contacts
PCT/US2005/036680 WO2006055126A2 (en) 2004-11-12 2005-10-14 Method of making solar cell contacts
KR1020077010508A KR101127085B1 (en) 2004-11-12 2005-10-14 Method of making solar cell contacts
EP05815033.5A EP1810343A4 (en) 2004-11-12 2005-10-14 Method of making solar cell contacts
CA2584073A CA2584073C (en) 2004-11-12 2005-10-14 Method of making solar cell contacts
CN201210335668.2A CN102891215B (en) 2004-11-12 2005-10-14 Manufacture the method for solar cell contacts
JP2007541189A JP2008520094A (en) 2004-11-12 2005-10-14 Method for manufacturing solar cell contact
CN2005800385361A CN101379620B (en) 2004-11-12 2005-10-14 Method of making solar cell contacts
TW094139362A TWI380458B (en) 2004-11-12 2005-11-10 Method of making solar cell contacts
US12/573,209 US8889041B2 (en) 2004-11-12 2009-10-05 Method of making solar cell contacts
JP2012233543A JP5591901B2 (en) 2004-11-12 2012-10-23 Mixture for manufacturing solar cell contacts and method for manufacturing solar cell contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/988,208 US20060102228A1 (en) 2004-11-12 2004-11-12 Method of making solar cell contacts

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/573,209 Continuation US8889041B2 (en) 2004-11-12 2009-10-05 Method of making solar cell contacts

Publications (1)

Publication Number Publication Date
US20060102228A1 true US20060102228A1 (en) 2006-05-18

Family

ID=36384917

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/988,208 Abandoned US20060102228A1 (en) 2004-11-12 2004-11-12 Method of making solar cell contacts
US12/573,209 Active US8889041B2 (en) 2004-11-12 2009-10-05 Method of making solar cell contacts

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/573,209 Active US8889041B2 (en) 2004-11-12 2009-10-05 Method of making solar cell contacts

Country Status (9)

Country Link
US (2) US20060102228A1 (en)
EP (1) EP1810343A4 (en)
JP (2) JP2008520094A (en)
KR (1) KR101127085B1 (en)
CN (2) CN101379620B (en)
AU (1) AU2005307036B2 (en)
CA (1) CA2584073C (en)
TW (1) TWI380458B (en)
WO (1) WO2006055126A2 (en)

Cited By (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070215202A1 (en) * 2006-03-20 2007-09-20 Ferro Corporation Aluminum-boron solar cell contacts
US7485245B1 (en) 2007-10-18 2009-02-03 E.I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
US20090056798A1 (en) * 2007-08-29 2009-03-05 Ferro Corporation Thick Film Pastes For Fire Through Applications In Solar Cells
US20090101199A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US20090101190A1 (en) * 2006-03-20 2009-04-23 Ferro Corporation Solar Cell Contacts Containing Aluminum And At Least One Of Boron, Titanium, Nickel, Tin, Silver, Gallium, Zinc, Indium And Copper
US20090120497A1 (en) * 2007-11-09 2009-05-14 Schetty Iii Robert A Method of metallizing solar cell conductors by electroplating with minimal attack on underlying materials of construction
US20090162972A1 (en) * 2007-12-21 2009-06-25 Palo Alto Research Center Incorporated Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells
US20090239331A1 (en) * 2008-03-24 2009-09-24 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
WO2010003619A1 (en) 2008-07-10 2010-01-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Metal-containing composition, process for producing electric contact structures on electronic components and also electronic component
US20100108141A1 (en) * 2007-05-09 2010-05-06 Hitachi Chemical Company, Ltd. Method for connecting conductor, member for connecting conductor, connecting structure and solar cell module
WO2010049223A2 (en) * 2008-10-31 2010-05-06 Bosch Solar Energy Ag Method, device, and printing substance for producing a metal contact structure
US20100124619A1 (en) * 2008-11-14 2010-05-20 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US20100126565A1 (en) * 2008-11-26 2010-05-27 E. I. Du Pont De Nemours And Company Conductive paste for solar cell electrode
US20100163101A1 (en) * 2007-04-25 2010-07-01 Ferro Corporation Thick Film Conductor Formulations Comprising Silver And Nickel Or Silver And Nickel Alloys And Solar Cells Made Therefrom
US20100236621A1 (en) * 2009-03-19 2010-09-23 E.I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US20110012066A1 (en) * 2009-06-17 2011-01-20 Innovalight, Inc. Group iv nanoparticle fluid
US20110070676A1 (en) * 2008-09-09 2011-03-24 Palo Alto Research Center Incorporated Interdigitated Back Contact Silicon Solar Cells Fabrication Using Diffusion Barriers
US20110143497A1 (en) * 2009-12-16 2011-06-16 E. I. Du Pont De Nemours And Company Thick film conductive composition used in conductors for photovoltaic cells
US20110186787A1 (en) * 2008-10-22 2011-08-04 Ferro Corporation Electrically Conductive Polymeric Compositions, Contacts, Assemblies and Methods
US20110227004A1 (en) * 2010-03-19 2011-09-22 Seok Hyun Jung Paste for solar cell electrode and solar cell using the same
US20110232746A1 (en) * 2010-05-04 2011-09-29 E. I. Du Pont De Nemours And Company Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices
US20110315210A1 (en) * 2009-12-18 2011-12-29 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
WO2012019065A2 (en) 2010-08-06 2012-02-09 E. I. Du Pont De Nemours And Company Conductive paste for a solar cell electrode
CN102364583A (en) * 2011-09-30 2012-02-29 宁波广博纳米新材料股份有限公司 Silver paste for back face of lead-free crystal silicon solar cell and preparation method thereof
US20120048363A1 (en) * 2010-08-24 2012-03-01 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the conductive paste
US20120067417A1 (en) * 2006-04-25 2012-03-22 Namics Corporation Solar cell and method for manufacturing the same
EP2452366A2 (en) * 2009-07-06 2012-05-16 LG Electronics Inc. Electrode paste for solar cell, solar cell using the paste, and fabrication method of the solar cell
CN102498524A (en) * 2009-09-18 2012-06-13 株式会社则武 Paste composition for solar battery electrode
US20120186647A1 (en) * 2011-01-06 2012-07-26 Ferro Corporation Organometallic And Hydrocarbon Additives For Use With Aluminum Back Solar Cell Contacts
CN102737751A (en) * 2011-04-08 2012-10-17 上海新天和电子材料有限公司 Back surface field aluminum conductive slurry used for preparing silicon solar battery, and manufacturing method thereof
US20130104973A1 (en) * 2011-10-26 2013-05-02 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including electrode formed using the conductive paste
US20130115460A1 (en) * 2010-07-02 2013-05-09 Sophia Product Co. Bonding material
DE102012221334A1 (en) 2011-12-22 2013-06-27 Schott Ag Flux used for bonding silicon-based solar cells, contains metal powder and glass powder which is sulfate-containing glass powder containing sulfur trioxide
WO2013096715A1 (en) * 2011-12-22 2013-06-27 Ferro Corporation Solar cell pastes for low resistance contacts
EP2636070A1 (en) * 2010-10-28 2013-09-11 Heraeus Precious Metals North America Conshohocken LLC Solar cell metallizations containing metal additive
US20130312825A1 (en) * 2012-05-22 2013-11-28 Namics Corporation Conductive pastes for forming solar cell electrodes
CN103514973A (en) * 2012-06-25 2014-01-15 比亚迪股份有限公司 Conductive slurry used for solar cell and method of preparing the same
US8668847B2 (en) 2010-08-13 2014-03-11 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8709862B2 (en) 2011-01-06 2014-04-29 Heraeus Precious Metals North America Conshohocken Llc Vanadium, cobalt and strontium additives for use in aluminum back solar cell contacts
US8715535B2 (en) 2010-08-05 2014-05-06 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
EP2749546A1 (en) * 2012-12-28 2014-07-02 Heraeus Precious Metals GmbH & Co. KG An electro-conductive paste comprising elemental phosphorus in the preparation of electrodes in MWT solar cells
US20140186994A1 (en) * 2012-12-29 2014-07-03 Sang Hee Park Composition for solar cell electrodes and electrode fabricated using the same
US8815636B2 (en) 2011-01-06 2014-08-26 Heraeus Precious Metals North America Conshohocken Llc Oxides and glasses for use with aluminum back solar cell contacts
WO2014172106A1 (en) 2013-04-18 2014-10-23 Ferro Corporation Low melting glass compositons
US8889040B2 (en) 2010-07-02 2014-11-18 Noritake Co., Limited Conductive paste composition for solar cell
US8940195B2 (en) 2011-01-13 2015-01-27 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
US8962424B2 (en) 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
US8974703B2 (en) 2010-10-27 2015-03-10 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the same
US8987586B2 (en) 2010-08-13 2015-03-24 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US20150099352A1 (en) * 2011-07-19 2015-04-09 Hitachi Chemical Company, Ltd. COMPOSITION FOR FORMING n-TYPE DIFFUSION LAYER, METHOD OF PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT
US9105370B2 (en) 2011-01-12 2015-08-11 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
EP2913140A1 (en) * 2014-02-26 2015-09-02 Heraeus Precious Metals North America Conshohocken LLC Molybdenum-containing glass frit for electroconductive paste composition
EP2913139A1 (en) * 2014-02-26 2015-09-02 Heraeus Precious Metals North America Conshohocken LLC A glass comprising molybdenum and lead in a solar cell paste
EP2805334A4 (en) * 2012-01-16 2015-10-28 Heraeus Precious Metals North America Conshohocken Llc Aluminum conductor paste for back surface passivated cells with locally opened vias
US20150364621A1 (en) * 2012-12-29 2015-12-17 Cheil Industries Inc. Composition for forming electrode of solar cell and electrode manufactured by using same
US9312045B2 (en) 2011-07-29 2016-04-12 Noritake Co., Limited Conductive paste composition for solar cells and solar cell
WO2017052786A1 (en) * 2015-09-25 2017-03-30 Heraeus Precious Metals North America Conshohocken Llc Poly-siloxane containing organic vehicle for electroconductive pastes
EP3032547B1 (en) 2014-12-08 2017-06-28 Giga Solar Materials Corp. A conductive paste containing lead-free glass frit
EP2270841A4 (en) * 2008-03-21 2017-08-23 Shin-Etsu Chemical Co., Ltd. Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste
KR101802546B1 (en) * 2012-12-29 2017-11-30 제일모직주식회사 Composition for forming solar cell and electrode prepared using the same
US9984787B2 (en) 2009-11-11 2018-05-29 Samsung Electronics Co., Ltd. Conductive paste and solar cell
US10186627B2 (en) 2007-05-09 2019-01-22 Hitachi Chemical Company, Ltd. Conductor connection member, connection structure, and solar cell module
US10217876B2 (en) 2015-09-25 2019-02-26 Heraeus Precious Metals North America Conshohocken Llc Poly-siloxane containing organic vehicle for electroconductive pastes
US10658528B2 (en) 2017-04-18 2020-05-19 Dupont Electronics, Inc. Conductive paste composition and semiconductor devices made therewith

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060102228A1 (en) 2004-11-12 2006-05-18 Ferro Corporation Method of making solar cell contacts
TWI370552B (en) * 2007-06-08 2012-08-11 Gigastorage Corp Solar cell
JP5272373B2 (en) * 2007-10-17 2013-08-28 セントラル硝子株式会社 Polycrystalline Si solar cell
JP5059042B2 (en) 2009-02-25 2012-10-24 株式会社ノリタケカンパニーリミテド Paste composition for solar cell electrode
JP5550881B2 (en) * 2009-10-15 2014-07-16 ナミックス株式会社 Solar cell and manufacturing method thereof
KR101332429B1 (en) * 2009-12-17 2013-11-22 제일모직주식회사 Paste for forming electrode of solar cell and solar cell with the same
KR101309809B1 (en) * 2010-08-12 2013-09-23 제일모직주식회사 Aluminium paste for solar cell and solar cell using the same
JP5454414B2 (en) * 2010-08-18 2014-03-26 住友金属鉱山株式会社 Thick film conductor forming composition, thick film conductor formed using the composition, and chip resistor using the thick film conductor
CN102131315B (en) * 2010-09-28 2013-03-06 施吉承 Formula of electrode solution for electro-thermal film heating tube
KR101130196B1 (en) * 2010-11-11 2012-03-30 엘지전자 주식회사 Solar cell
JP2012142422A (en) * 2010-12-28 2012-07-26 Noritake Co Ltd Glass for conductive paste for solar cell
KR101765919B1 (en) 2011-01-25 2017-08-07 엘지이노텍 주식회사 Glass frit, paste compisition, and solar cell
EP2754185A4 (en) * 2011-09-09 2015-06-03 Heraeus Precious Metals North America Conshohocken Llc Silver solar cell contacts
CN103021511B (en) * 2011-09-22 2016-05-11 比亚迪股份有限公司 A kind of crystal silicon solar energy battery front electrode silver slurry and preparation method thereof
JP2013077774A (en) * 2011-09-30 2013-04-25 Noritake Co Ltd Conductive paste composition for solar cell
CN104380391A (en) 2012-04-18 2015-02-25 赫劳斯贵金属北美康舍霍肯有限责任公司 Solar cell contacts with nickel intermetallic compositions
DE102012216970A1 (en) 2012-09-21 2014-03-27 Schott Ag Solder joint of electrically conductive solder material comprising substrate, metal and glass material, preferably glass or glass-ceramic comprising e.g. lead(II) oxide, silicon dioxide and lithium oxide, useful e.g. in electrical component
CN103151096B (en) * 2013-02-06 2015-09-02 苏州达方电子有限公司 Silver slurry and the purposes for the manufacture of photovoltaic module thereof
KR101598501B1 (en) 2014-08-25 2016-03-02 한국에너지기술연구원 Methods of manufacturing silver printed transparent electrode and methods of manufacturing solar cell using the same
CN104575667B (en) * 2014-12-24 2017-09-26 乐凯胶片股份有限公司 Crystal silicon solar energy battery front conductive silver paste
KR101961946B1 (en) * 2017-07-17 2019-03-25 한화큐셀앤드첨단소재 주식회사 Glass frit, paste for forming perc solar cell electrode comprising the same and perc solar cell electrode
CN111116239B (en) * 2019-12-25 2022-06-07 西安英诺维特新材料有限公司 Electronic paste suitable for PZT atomized sheet co-firing process and co-firing method

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839231A (en) * 1972-04-27 1974-10-01 Du Pont Air fireable compositions containing vanadium oxide and boron silicide, and devices therefrom
US4400214A (en) * 1981-06-05 1983-08-23 Matsushita Electric Industrial, Co., Ltd. Conductive paste
US4486232A (en) * 1982-08-20 1984-12-04 Hitachi, Ltd. Electrode material for semi-conductor devices
US5118362A (en) * 1990-09-24 1992-06-02 Mobil Solar Energy Corporation Electrical contacts and methods of manufacturing same
US5151377A (en) * 1991-03-07 1992-09-29 Mobil Solar Energy Corporation Method for forming contacts
US5198154A (en) * 1990-03-19 1993-03-30 Asahi Kasei Kogyo Kabushiki Kaisha High temperature baking paste
US5698451A (en) * 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
US5841044A (en) * 1995-11-20 1998-11-24 Degussa Aktiengesellschaft Silver-iron material for electrical switching contacts (I)
US5948320A (en) * 1997-07-17 1999-09-07 Alps Electric Co., Ltd. Electro-conductive composition and electronic equipment using same
US6036889A (en) * 1995-07-12 2000-03-14 Parelec, Inc. Electrical conductors formed from mixtures of metal powders and metallo-organic decomposition compounds
US6225392B1 (en) * 1996-05-15 2001-05-01 Asahi Glass Company Ltd. Conductive paste
USRE37512E1 (en) * 1995-02-21 2002-01-15 Interuniversitair Microelektronica Centrum (Imec) Vzw Method of preparing solar cell front contacts
US6632730B1 (en) * 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
JPS5840845A (en) * 1981-09-03 1983-03-09 Nippon Electric Glass Co Ltd Glass for semiconductor coating
JPS5879837A (en) * 1981-10-31 1983-05-13 Tdk Corp Electrically conductive paste composition
JPS5883073A (en) * 1981-11-11 1983-05-18 Shoei Kagaku Kogyo Kk Electrically conductive paint
JPH07109723B2 (en) * 1990-03-19 1995-11-22 旭化成工業株式会社 High temperature firing composition and paste
JP3180299B2 (en) * 1992-05-20 2001-06-25 日本電気硝子株式会社 Low melting point sealing composition
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein
JP3297531B2 (en) * 1994-06-27 2002-07-02 京セラ株式会社 Conductive paste
JPH0850806A (en) * 1994-08-05 1996-02-20 Sumitomo Metal Mining Co Ltd Composition for thick film conductor
EP1007308B1 (en) * 1997-02-24 2003-11-12 Superior Micropowders LLC Aerosol method and apparatus, particulate products, and electronic devices made therefrom
JP3760361B2 (en) * 1997-03-24 2006-03-29 株式会社村田製作所 Conductive composition for solar cell
JPH10340621A (en) * 1997-06-05 1998-12-22 Tanaka Kikinzoku Kogyo Kk Conductive paste
JPH11329070A (en) * 1998-05-13 1999-11-30 Murata Mfg Co Ltd Conductive paste
JP2002367510A (en) * 2001-06-12 2002-12-20 Asahi Glass Co Ltd Glass frit firing method
WO2003025954A1 (en) * 2001-09-20 2003-03-27 E. I. Du Pont De Nemours And Company Silver conductor composition
JP2003133567A (en) * 2001-10-24 2003-05-09 Kyocera Corp Method of manufacturing solar cell and electrode material used in the same solar cell
JP2003165744A (en) * 2001-11-26 2003-06-10 Murata Mfg Co Ltd Conductive paste
US6814795B2 (en) 2001-11-27 2004-11-09 Ferro Corporation Hot melt conductor paste composition
JP4161565B2 (en) * 2001-11-27 2008-10-08 旭硝子株式会社 Lead-free glass and glass-ceramic composition for electronic circuit board production
US6866799B2 (en) * 2002-05-09 2005-03-15 Anuvu, Inc. Water-soluble electrically conductive composition, modifications, and applications thereof
JP2004207493A (en) * 2002-12-25 2004-07-22 Mitsubishi Electric Corp Semiconductor device, its manufacturing method, and solar cell
US20060102228A1 (en) 2004-11-12 2006-05-18 Ferro Corporation Method of making solar cell contacts

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839231A (en) * 1972-04-27 1974-10-01 Du Pont Air fireable compositions containing vanadium oxide and boron silicide, and devices therefrom
US4400214A (en) * 1981-06-05 1983-08-23 Matsushita Electric Industrial, Co., Ltd. Conductive paste
US4486232A (en) * 1982-08-20 1984-12-04 Hitachi, Ltd. Electrode material for semi-conductor devices
US5698451A (en) * 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
US5198154A (en) * 1990-03-19 1993-03-30 Asahi Kasei Kogyo Kabushiki Kaisha High temperature baking paste
US5118362A (en) * 1990-09-24 1992-06-02 Mobil Solar Energy Corporation Electrical contacts and methods of manufacturing same
US5151377A (en) * 1991-03-07 1992-09-29 Mobil Solar Energy Corporation Method for forming contacts
USRE37512E1 (en) * 1995-02-21 2002-01-15 Interuniversitair Microelektronica Centrum (Imec) Vzw Method of preparing solar cell front contacts
US6036889A (en) * 1995-07-12 2000-03-14 Parelec, Inc. Electrical conductors formed from mixtures of metal powders and metallo-organic decomposition compounds
US5841044A (en) * 1995-11-20 1998-11-24 Degussa Aktiengesellschaft Silver-iron material for electrical switching contacts (I)
US6225392B1 (en) * 1996-05-15 2001-05-01 Asahi Glass Company Ltd. Conductive paste
US5948320A (en) * 1997-07-17 1999-09-07 Alps Electric Co., Ltd. Electro-conductive composition and electronic equipment using same
US6632730B1 (en) * 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor
US6664631B2 (en) * 1999-11-23 2003-12-16 Ebara Solar, Inc. Apparatus for self-doping contacts to a semiconductor

Cited By (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8575474B2 (en) 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
US20070215202A1 (en) * 2006-03-20 2007-09-20 Ferro Corporation Aluminum-boron solar cell contacts
US8759668B2 (en) 2006-03-20 2014-06-24 Heraeus Precious Metals North America Conshohocken Llc Aluminum-boron solar cell contacts
US20090101190A1 (en) * 2006-03-20 2009-04-23 Ferro Corporation Solar Cell Contacts Containing Aluminum And At Least One Of Boron, Titanium, Nickel, Tin, Silver, Gallium, Zinc, Indium And Copper
US8076570B2 (en) 2006-03-20 2011-12-13 Ferro Corporation Aluminum-boron solar cell contacts
US20120067417A1 (en) * 2006-04-25 2012-03-22 Namics Corporation Solar cell and method for manufacturing the same
US20100163101A1 (en) * 2007-04-25 2010-07-01 Ferro Corporation Thick Film Conductor Formulations Comprising Silver And Nickel Or Silver And Nickel Alloys And Solar Cells Made Therefrom
US9660131B2 (en) 2007-05-09 2017-05-23 Hitachi Chemical Company, Ltd. Method for connecting conductor, member for connecting conductor, connecting structure and solar cell module
US10186627B2 (en) 2007-05-09 2019-01-22 Hitachi Chemical Company, Ltd. Conductor connection member, connection structure, and solar cell module
US10032952B2 (en) * 2007-05-09 2018-07-24 Hitachi Chemical Company, Ltd. Connecting structure and solar cell module
US20100108141A1 (en) * 2007-05-09 2010-05-06 Hitachi Chemical Company, Ltd. Method for connecting conductor, member for connecting conductor, connecting structure and solar cell module
US20090056798A1 (en) * 2007-08-29 2009-03-05 Ferro Corporation Thick Film Pastes For Fire Through Applications In Solar Cells
TWI475699B (en) * 2007-08-29 2015-03-01 Ferro Corp Thick film pastes for fire through applications in solar cells
US8309844B2 (en) 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
US8802970B2 (en) 2007-08-29 2014-08-12 Heraeus Precious Metals North America Conshohocken Llc Thick film pastes for fire through applications in solar cells
US8236598B2 (en) * 2007-08-31 2012-08-07 Ferro Corporation Layered contact structure for solar cells
EP2191514A4 (en) * 2007-08-31 2016-11-30 Heraeus Precious Metals North America Conshohocken Llc Layered contact structure for solar cells
KR101543046B1 (en) 2007-08-31 2015-08-07 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 Layered contact structure for solar cells
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
US20100173446A1 (en) * 2007-08-31 2010-07-08 Ferro Corporation Layered Contact Structure For Solar Cells
US20120270366A1 (en) * 2007-08-31 2012-10-25 Ferro Corporation Layered Contact Structure For Solar Cells
US7485245B1 (en) 2007-10-18 2009-02-03 E.I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste
US7736545B2 (en) 2007-10-18 2010-06-15 E.I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste
US20090101199A1 (en) * 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US8075807B2 (en) 2007-10-18 2011-12-13 E. I. Du Pont De Nemours And Company Electrode paste for solar cell and solar cell electrode using the paste
US8552558B2 (en) * 2007-10-18 2013-10-08 E I Du Pont De Nemours And Company Conductive compositions and processes for use in the manufacture of semiconductor devices
US20090120497A1 (en) * 2007-11-09 2009-05-14 Schetty Iii Robert A Method of metallizing solar cell conductors by electroplating with minimal attack on underlying materials of construction
US20090162972A1 (en) * 2007-12-21 2009-06-25 Palo Alto Research Center Incorporated Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells
US7820540B2 (en) 2007-12-21 2010-10-26 Palo Alto Research Center Incorporated Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells
EP2270841A4 (en) * 2008-03-21 2017-08-23 Shin-Etsu Chemical Co., Ltd. Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste
US20090239331A1 (en) * 2008-03-24 2009-09-24 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
US7833808B2 (en) 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
EP2105969A2 (en) 2008-03-24 2009-09-30 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
US20110186121A1 (en) * 2008-07-10 2011-08-04 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Metal-containing composition, method for producing electrical contact structures on electrical components and also electrical component
DE102008032554A1 (en) 2008-07-10 2010-01-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Metal-containing composition, process for the production of electrical contact structures on electronic components and electronic component
WO2010003619A1 (en) 2008-07-10 2010-01-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Metal-containing composition, process for producing electric contact structures on electronic components and also electronic component
US20110070676A1 (en) * 2008-09-09 2011-03-24 Palo Alto Research Center Incorporated Interdigitated Back Contact Silicon Solar Cells Fabrication Using Diffusion Barriers
US9054237B2 (en) 2008-09-09 2015-06-09 Palo Alto Research Center Incorporated Interdigitated back contact silicon solar cells fabrication using diffusion barriers
US20110186787A1 (en) * 2008-10-22 2011-08-04 Ferro Corporation Electrically Conductive Polymeric Compositions, Contacts, Assemblies and Methods
US8617427B2 (en) 2008-10-22 2013-12-31 Heraeus Precious Metals North America Conshohocken Llc Electrically conductive polymeric compositions, contacts, assemblies and methods
US9082899B2 (en) 2008-10-22 2015-07-14 Heraeus Precious Metals North America Conshohocken Llc Electrically conductive polymeric compositions, contacts, assemblies, and methods
WO2010049223A3 (en) * 2008-10-31 2011-09-09 Robert Bosch Gmbh Method, device, and printing substance for producing a metal contact structure
WO2010049223A2 (en) * 2008-10-31 2010-05-06 Bosch Solar Energy Ag Method, device, and printing substance for producing a metal contact structure
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US20100124619A1 (en) * 2008-11-14 2010-05-20 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
WO2010062881A1 (en) * 2008-11-26 2010-06-03 E. I. Du Pont De Nemours And Company Conductive paste for solar cell electrode
US20100126565A1 (en) * 2008-11-26 2010-05-27 E. I. Du Pont De Nemours And Company Conductive paste for solar cell electrode
US8231934B2 (en) 2008-11-26 2012-07-31 E. I. Du Pont De Nemours And Company Conductive paste for solar cell electrode
US20100236621A1 (en) * 2009-03-19 2010-09-23 E.I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
WO2010107996A1 (en) 2009-03-19 2010-09-23 E. I. Du Pont De Nemours And Company Conductive paste for a solar cell electrode
US8465794B2 (en) 2009-03-19 2013-06-18 E I Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US20110012066A1 (en) * 2009-06-17 2011-01-20 Innovalight, Inc. Group iv nanoparticle fluid
US9496136B2 (en) * 2009-06-17 2016-11-15 Innovalight, Inc. Group IV nanoparticle fluid
EP2452366A2 (en) * 2009-07-06 2012-05-16 LG Electronics Inc. Electrode paste for solar cell, solar cell using the paste, and fabrication method of the solar cell
EP2452366A4 (en) * 2009-07-06 2012-11-28 Lg Electronics Inc Electrode paste for solar cell, solar cell using the paste, and fabrication method of the solar cell
CN102498524A (en) * 2009-09-18 2012-06-13 株式会社则武 Paste composition for solar battery electrode
US8889039B2 (en) * 2009-09-18 2014-11-18 Noritake Co., Limited Paste composition for solar battery electrode
US20120168691A1 (en) * 2009-09-18 2012-07-05 Noritake Co., Limited Paste composition for solar battery electrode
US9984787B2 (en) 2009-11-11 2018-05-29 Samsung Electronics Co., Ltd. Conductive paste and solar cell
US20110143497A1 (en) * 2009-12-16 2011-06-16 E. I. Du Pont De Nemours And Company Thick film conductive composition used in conductors for photovoltaic cells
US20110315210A1 (en) * 2009-12-18 2011-12-29 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
WO2011075703A3 (en) * 2009-12-18 2012-03-01 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
US20110227004A1 (en) * 2010-03-19 2011-09-22 Seok Hyun Jung Paste for solar cell electrode and solar cell using the same
US10069020B2 (en) 2010-05-04 2018-09-04 E I Du Pont De Nemours And Company Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
US8889979B2 (en) 2010-05-04 2014-11-18 E I Du Pont De Nemours And Company Thick-film pastes containing lead—tellurium—lithium—titanium—oxides, and their use in the manufacture of semiconductor devices
US8895843B2 (en) 2010-05-04 2014-11-25 E I Du Pont De Nemours And Company Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices
US10468542B2 (en) 2010-05-04 2019-11-05 Dupont Electronics, Inc. Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
US8889980B2 (en) 2010-05-04 2014-11-18 E I Du Pont De Nemours And Company Thick-film pastes containing lead—tellurium—lithium—oxides, and their use in the manufacture of semiconductor devices
US9722100B2 (en) 2010-05-04 2017-08-01 E I Du Pont De Nemours And Company Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
US20110232746A1 (en) * 2010-05-04 2011-09-29 E. I. Du Pont De Nemours And Company Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices
US11043605B2 (en) 2010-05-04 2021-06-22 E I Du Pont De Nemours And Company Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices
US11158746B2 (en) * 2010-05-04 2021-10-26 Solar Paste, Llc Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the manufacture of semiconductor devices
US10559703B2 (en) 2010-05-04 2020-02-11 Dupont Electronics, Inc. Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices
US20130115460A1 (en) * 2010-07-02 2013-05-09 Sophia Product Co. Bonding material
US8871661B2 (en) * 2010-07-02 2014-10-28 Sophia Product Co. Bonding material
US8889040B2 (en) 2010-07-02 2014-11-18 Noritake Co., Limited Conductive paste composition for solar cell
US8715535B2 (en) 2010-08-05 2014-05-06 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
WO2012019065A3 (en) * 2010-08-06 2012-03-29 E. I. Du Pont De Nemours And Company Conductive paste for a solar cell electrode
WO2012019065A2 (en) 2010-08-06 2012-02-09 E. I. Du Pont De Nemours And Company Conductive paste for a solar cell electrode
US8987586B2 (en) 2010-08-13 2015-03-24 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8668847B2 (en) 2010-08-13 2014-03-11 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste
US8641927B2 (en) * 2010-08-24 2014-02-04 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the conductive paste
US20120048363A1 (en) * 2010-08-24 2012-03-01 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the conductive paste
US8974703B2 (en) 2010-10-27 2015-03-10 Samsung Electronics Co., Ltd. Conductive paste and electronic device and solar cell including an electrode formed using the same
EP2636070A1 (en) * 2010-10-28 2013-09-11 Heraeus Precious Metals North America Conshohocken LLC Solar cell metallizations containing metal additive
US9466738B2 (en) 2010-10-28 2016-10-11 Heracus Precious Metals North America Conshohocken LLC Solar cell metallizations containing metal additive
EP2636070A4 (en) * 2010-10-28 2014-04-02 Heraeus Precious Metals North America Conshohocken Llc Solar cell metallizations containing metal additive
US9680036B2 (en) * 2011-01-06 2017-06-13 Heraeus Precious Metals North America Conshohocken Llc Organometallic and hydrocarbon additives for use with aluminum back solar cell contacts
US8815636B2 (en) 2011-01-06 2014-08-26 Heraeus Precious Metals North America Conshohocken Llc Oxides and glasses for use with aluminum back solar cell contacts
US20120186647A1 (en) * 2011-01-06 2012-07-26 Ferro Corporation Organometallic And Hydrocarbon Additives For Use With Aluminum Back Solar Cell Contacts
US8709862B2 (en) 2011-01-06 2014-04-29 Heraeus Precious Metals North America Conshohocken Llc Vanadium, cobalt and strontium additives for use in aluminum back solar cell contacts
US9105370B2 (en) 2011-01-12 2015-08-11 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
US8940195B2 (en) 2011-01-13 2015-01-27 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including an electrode formed using the same
US8962424B2 (en) 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
CN102737751A (en) * 2011-04-08 2012-10-17 上海新天和电子材料有限公司 Back surface field aluminum conductive slurry used for preparing silicon solar battery, and manufacturing method thereof
US20150099352A1 (en) * 2011-07-19 2015-04-09 Hitachi Chemical Company, Ltd. COMPOSITION FOR FORMING n-TYPE DIFFUSION LAYER, METHOD OF PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT
US9312045B2 (en) 2011-07-29 2016-04-12 Noritake Co., Limited Conductive paste composition for solar cells and solar cell
CN102364583A (en) * 2011-09-30 2012-02-29 宁波广博纳米新材料股份有限公司 Silver paste for back face of lead-free crystal silicon solar cell and preparation method thereof
US20130104973A1 (en) * 2011-10-26 2013-05-02 Samsung Electronics Co., Ltd. Conductive paste, and electronic device and solar cell including electrode formed using the conductive paste
DE102012221334A1 (en) 2011-12-22 2013-06-27 Schott Ag Flux used for bonding silicon-based solar cells, contains metal powder and glass powder which is sulfate-containing glass powder containing sulfur trioxide
EP2795672A4 (en) * 2011-12-22 2015-08-19 Heraeus Precious Metals North America Conshohocken Llc Solar cell pastes for low resistance contacts
DE102012221334B4 (en) 2011-12-22 2018-10-25 Schott Ag Solder paste and its use for front or back side contacting of silicon based solar cells
WO2013096715A1 (en) * 2011-12-22 2013-06-27 Ferro Corporation Solar cell pastes for low resistance contacts
EP2805334A4 (en) * 2012-01-16 2015-10-28 Heraeus Precious Metals North America Conshohocken Llc Aluminum conductor paste for back surface passivated cells with locally opened vias
US20130312825A1 (en) * 2012-05-22 2013-11-28 Namics Corporation Conductive pastes for forming solar cell electrodes
US10475938B2 (en) * 2012-05-22 2019-11-12 Namics Corporation Process for producing conductive pastes for forming solar cell electrodes
CN103514973A (en) * 2012-06-25 2014-01-15 比亚迪股份有限公司 Conductive slurry used for solar cell and method of preparing the same
EP2749546A1 (en) * 2012-12-28 2014-07-02 Heraeus Precious Metals GmbH & Co. KG An electro-conductive paste comprising elemental phosphorus in the preparation of electrodes in MWT solar cells
WO2014102001A1 (en) * 2012-12-28 2014-07-03 Heraeus Precious Metals Gmbh & Co. Kg An electro-conductive paste comprising elemental phosphorus in the preparation of electrodes in mwt solar cells
US9911872B2 (en) 2012-12-29 2018-03-06 Cheil Industries, Inc. Composition for forming electrode of solar cell, and electrode manufactured using same
KR20170136466A (en) * 2012-12-29 2017-12-11 삼성에스디아이 주식회사 Composition for forming solar cell electrode and electrode prepared using the same
CN103915129A (en) * 2012-12-29 2014-07-09 第一毛织株式会社 Composition for solar cell electrodes and electrode fabricated using the same
KR101802546B1 (en) * 2012-12-29 2017-11-30 제일모직주식회사 Composition for forming solar cell and electrode prepared using the same
US20140186994A1 (en) * 2012-12-29 2014-07-03 Sang Hee Park Composition for solar cell electrodes and electrode fabricated using the same
US20150364621A1 (en) * 2012-12-29 2015-12-17 Cheil Industries Inc. Composition for forming electrode of solar cell and electrode manufactured by using same
KR101982412B1 (en) 2012-12-29 2019-05-28 삼성에스디아이 주식회사 Composition for forming solar cell electrode and electrode prepared using the same
US9627556B2 (en) * 2012-12-29 2017-04-18 Cheil Industries, Inc. Composition for forming electrode of solar cell and electrode manufactured by using same
WO2014172106A1 (en) 2013-04-18 2014-10-23 Ferro Corporation Low melting glass compositons
TWI622999B (en) * 2014-02-26 2018-05-01 賀利氏貴金屬北美康舍霍肯有限責任公司 A glass comprising molybdenum and lead in a solar cell paste
EP2913140A1 (en) * 2014-02-26 2015-09-02 Heraeus Precious Metals North America Conshohocken LLC Molybdenum-containing glass frit for electroconductive paste composition
EP2913139A1 (en) * 2014-02-26 2015-09-02 Heraeus Precious Metals North America Conshohocken LLC A glass comprising molybdenum and lead in a solar cell paste
US9722102B2 (en) 2014-02-26 2017-08-01 Heraeus Precious Metals North America Conshohocken Llc Glass comprising molybdenum and lead in a solar cell paste
EP3032547B1 (en) 2014-12-08 2017-06-28 Giga Solar Materials Corp. A conductive paste containing lead-free glass frit
US10217876B2 (en) 2015-09-25 2019-02-26 Heraeus Precious Metals North America Conshohocken Llc Poly-siloxane containing organic vehicle for electroconductive pastes
WO2017052786A1 (en) * 2015-09-25 2017-03-30 Heraeus Precious Metals North America Conshohocken Llc Poly-siloxane containing organic vehicle for electroconductive pastes
US10658528B2 (en) 2017-04-18 2020-05-19 Dupont Electronics, Inc. Conductive paste composition and semiconductor devices made therewith

Also Published As

Publication number Publication date
AU2005307036A1 (en) 2006-05-26
CA2584073C (en) 2012-08-14
KR20070084100A (en) 2007-08-24
CN102891215A (en) 2013-01-23
US8889041B2 (en) 2014-11-18
CA2584073A1 (en) 2006-05-26
CN102891215B (en) 2016-01-20
CN101379620A (en) 2009-03-04
JP2013030804A (en) 2013-02-07
US20100096598A1 (en) 2010-04-22
JP5591901B2 (en) 2014-09-17
WO2006055126A2 (en) 2006-05-26
WO2006055126A3 (en) 2007-11-15
AU2005307036B2 (en) 2011-10-13
TW200631187A (en) 2006-09-01
JP2008520094A (en) 2008-06-12
EP1810343A2 (en) 2007-07-25
KR101127085B1 (en) 2012-03-23
EP1810343A4 (en) 2015-10-14
TWI380458B (en) 2012-12-21
CN101379620B (en) 2012-10-24

Similar Documents

Publication Publication Date Title
US8889041B2 (en) Method of making solar cell contacts
US9105768B2 (en) Lead free solar cell contacts
EP2137739B1 (en) Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom
US8076570B2 (en) Aluminum-boron solar cell contacts
US8815636B2 (en) Oxides and glasses for use with aluminum back solar cell contacts
US20100173446A1 (en) Layered Contact Structure For Solar Cells
US20130160844A1 (en) Thick-Film Composition Containing Antimony Oxides And Their Use In The Manufacture Of Semiconductor Devices
US20130160835A1 (en) Back-side electrode of p-type solar cell and method for forming the same
JP2024503951A (en) Conductive paste composition, its application, crystalline silicon solar cell electrode and its manufacturing method

Legal Events

Date Code Title Description
AS Assignment

Owner name: FERRO CORPORATION, OHIO

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SRIDHARAN, SRINIVASAN;PHAM, TUNG;KHADILKAR, CHANDRASHEKHAR S.;AND OTHERS;REEL/FRAME:016422/0391

Effective date: 20050321

AS Assignment

Owner name: NATIONAL CITY BANK, AS ADMINISTRATIVE AGENT,OHIO

Free format text: SECURITY AGREEMENT;ASSIGNOR:FERRO CORPORATION;REEL/FRAME:017527/0909

Effective date: 20060419

Owner name: NATIONAL CITY BANK, AS ADMINISTRATIVE AGENT, OHIO

Free format text: SECURITY AGREEMENT;ASSIGNOR:FERRO CORPORATION;REEL/FRAME:017527/0909

Effective date: 20060419

AS Assignment

Owner name: NATIONAL CITY BANK, AS COLLATERAL AGENT,OHIO

Free format text: SECURITY AGREEMENT;ASSIGNOR:FERRO CORPORATION;REEL/FRAME:017730/0594

Effective date: 20060606

Owner name: NATIONAL CITY BANK, AS COLLATERAL AGENT, OHIO

Free format text: SECURITY AGREEMENT;ASSIGNOR:FERRO CORPORATION;REEL/FRAME:017730/0594

Effective date: 20060606

AS Assignment

Owner name: J.P. MORGAN TRUST COMPANY, NATIONAL ASSOCIATION, A

Free format text: SECURITY AGREEMENT;ASSIGNOR:FERRO CORPORATION;REEL/FRAME:017794/0411

Effective date: 20060606

AS Assignment

Owner name: FERRO CORPORATION, OHIO

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. (AS SUCCESSOR-IN-INTEREST TO J.P. MORGAN TRUST COMPANY);REEL/FRAME:021590/0591

Effective date: 20080918

Owner name: FERRO CORPORATION,OHIO

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. (AS SUCCESSOR-IN-INTEREST TO J.P. MORGAN TRUST COMPANY);REEL/FRAME:021590/0591

Effective date: 20080918

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION