US10964575B2 - Transfer robot system, teaching method and wafer receptacle - Google Patents

Transfer robot system, teaching method and wafer receptacle Download PDF

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US10964575B2
US10964575B2 US16/565,582 US201916565582A US10964575B2 US 10964575 B2 US10964575 B2 US 10964575B2 US 201916565582 A US201916565582 A US 201916565582A US 10964575 B2 US10964575 B2 US 10964575B2
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reflector
wafer
transfer robot
optical element
end effector
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US20200161154A1 (en
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Kippei Sugita
Kenji Nagai
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Definitions

  • Patent Document 1 describes a cassette stage.
  • the cassette stage mounts thereon a cassette accommodating wafers therein.
  • the cassette stage is equipped with three optical sensors at a front side of the cassette.
  • a taught position is determined based on a position obtained when an end effector attached to a distal end of an arm blocks an optical axis of the sensor.
  • Patent Document 1 Japanese Patent Laid-open Publication No. 2009-049250
  • a transfer robot system in one exemplary embodiment, there is provided a transfer robot system.
  • the transfer robot system includes a transfer robot, a controller, a wafer receptacle and an interferometer.
  • the transfer robot has an arm and an end effector attached to the distal end of the arm, and is configured to transfer a wafer under an operational instruction.
  • the controller is configured to output the operational instruction to the transfer robot.
  • the wafer receptacle accommodates the wafer.
  • the interferometer has a light source configured to emit light, and is connected to the wafer receptacle.
  • the wafer receptacle comprises a receptacle body, pairs of support ribs, a first reflector and a first optical element.
  • the receptacle body has, at an open front through which the end effector and the wafer are allowed to pass, a top plate, two side plates and a bottom plate.
  • the pairs of support ribs are configured to support the wafer horizontally.
  • the first reflector is disposed on an inner face of the bottom plate.
  • the first optical element is disposed on the top plate so as to face the first reflector, and is configured to output the light emitted from the light source toward the first reflector and configured to receive reflected light from the first reflector.
  • the interferometer converts a reflected light spectrum into an interference spectrum.
  • the reflected light spectrum is based on the reflected light received by the first optical element, and the interference spectrum is generated between the wafer supported by the support ribs and the first reflector.
  • the controller determines a taught position based on a variation in the interference spectrum during an operation of the transfer robot under the operational instruction.
  • FIG. 1 is a schematic diagram illustrating an example of a substrate processing system equipped with a transfer robot system according to an exemplary embodiment
  • FIG. 2 is a schematic diagram illustrating an example of the transfer robot system according to the exemplary embodiment
  • FIG. 3 is a perspective view illustrating an example of a wafer receptacle according to the exemplary embodiment
  • FIG. 4 is a cross sectional view illustrating the example of the wafer receptacle according to the exemplary embodiment
  • FIG. 5 is a schematic diagram illustrating a relationship between an end effector and an irradiation position
  • FIG. 6 shows an example of an optical interference intensity distribution when the end effector is located at a reference position
  • FIG. 7 shows an example of the optical interference intensity distribution when the end effector is moved with respect to an expansion axis or a rotation axis
  • FIG. 8 shows an example of the optical interference intensity distribution when the end effector is moved along an elevation axis
  • FIG. 9 is an example flowchart of a taught position determination processing
  • FIG. 10 is an example flowchart of the taught position determination processing
  • FIG. 11 is a diagram illustrating a measurement position in an experimental example
  • FIG. 12 is a graph showing an example before and after an optical interference peak disappears.
  • FIG. 13 is a graph showing an example before and after an optical interference peak is shifted.
  • a taught position of a transfer robot is set to be an outside of a wafer receptacle.
  • a sensor is fixed to a stage on which the wafer receptacle is placed, and the taught position is determined based on a sensor detection result. Since an end effector of the transfer robot advances into an inside of the wafer receptacle and holds a wafer, accurate teaching can be carried out if the taught position is located at the inside of the wafer receptacle.
  • the apparatus described in Patent Document 1 if there is a failure in assembling the wafer receptacle and the stage, the wafer cannot be transferred accurately even if the taught position is accurate.
  • Exemplary embodiments provide a transfer robot system capable of determining a taught position in a support space for the wafer, a teaching method and a wafer receptacle.
  • a transfer robot system in one exemplary embodiment, there is provided a transfer robot system.
  • the transfer robot system includes a transfer robot, a controller, a wafer receptacle and an interferometer.
  • the transfer robot has an end effector and is configured to transfer a wafer under an operational instruction.
  • the controller is configured to output the operational instruction to the transfer robot.
  • the wafer receptacle accommodates the wafer.
  • the interferometer has a light source configured to emit light, and is connected to the wafer receptacle.
  • the wafer receptacle comprises a receptacle body, a first reflector and a first optical element.
  • the receptacle body has, at a front thereof, an opening through which the end effector and the wafer pass, and has a supporting member configured to support the wafer horizontally in a support space therein.
  • the first reflector is disposed below the support space within the receptacle body.
  • the first optical element is disposed above the support space to face the first reflector, and is configured to output the light emitted from the light source toward the first reflector and configured to receive reflected light from the first reflector.
  • the interferometer calculates an optical interference peak, which is generated between the wafer supported by the supporting member and the first reflector, based on the reflected light received by the first optical element.
  • the controller determines a taught position based on a variation in the optical interference peak during an operation of the transfer robot under the operational instruction.
  • the light is outputted from the first optical element disposed above the support space of the wafer toward the first reflection member disposed below the support space. This output light reaches the first reflection member after passing through the object located on the optical path. Then, the light is reflected by the first reflection member, and the reflection light arrives at the first optical element after passing through the object located on the optical path.
  • the optical interference intensity distribution having the optical interference peak in which the thickness and the position of the object located on the optical path is included is obtained based on the reflection light by the optical interference device. If the end effector of the transfer robot blocks the optical path of the first optical element, the optical interference peak disappears. Alternatively, if the end effector of the transfer robot lifts up the wafer, the position of the optical interference peak is shifted.
  • the teaching position of the transfer robot is determined by the controller based on the variation of the optical interference peak during the operation of the transfer robot which is carried out based on the operational instruction. As stated above, according to the transfer robot system, the teaching position in the support space of the wafer can be obtained.
  • the transfer robot system may further include a second reflector, a second optical element, a third reflector and a third optical element.
  • the second reflector is disposed at a different position from the first reflector below the support space within the receptacle body.
  • the second optical element is disposed above the support space to face the second reflector.
  • the second optical element is configured to output the light emitted from the light source toward the second reflector and configured to receive reflected light from the second reflector.
  • the third reflector is disposed at a different position from the first reflector and the second reflector below the support space within the receptacle body.
  • the third optical element is disposed above the support space to face the third reflector.
  • the third optical element is configured to output the light emitted from the light source toward the third reflector and configured to receive reflected light from the third reflector.
  • the interferometer calculates an optical interference peak, which is generated between the wafer supported by the supporting member and the second reflector, based on the reflected light received by the second optical element, and calculates an optical interference peak, which is generated between the wafer supported by the supporting member and the third reflector, based on the reflected light received by the third optical element.
  • the controller determines the taught position of the transfer robot based on a variation in the optical interference peak corresponding to each optical element during the operation of the transfer robot under the operational instruction.
  • the three pairs of the optical element and the reflector are prepared at the three different positions.
  • the variation of the optical interference peak is acquired by each pair, and the taught position is determined based on these variations. Therefore, accuracy of the taught position of the transfer robot system can be improved.
  • the controller may evaluate a horizontal posture of the wafer based on the variation of the optical interference peak corresponding to the respective optical elements during the operation of the transfer robot under the operational instruction. If the wafer is inclined, a contact height between the wafer and the end effector may differ depending on a position. Thus, if the three pairs of the optical element and the reflector are provided at the three different positions, the contact height between the wafer and the end effector can be obtained at each of the three different positions.
  • the transfer robot system is capable of determining whether the wafer is placed horizontally.
  • the transfer robot may be further equipped with an arm configured to support the end effector.
  • the operational instruction may be an instruction to move the end effector along an elevation axis of the arm below the wafer supported by the supporting member.
  • the controller may determine a position at which the optical interference peak starts to vary to be the taught position of the transfer robot.
  • a position of the optical interference peak is varied depending on a distance between the wafer and the reflector.
  • this transfer robot system may set a position where the end effector comes into contact with the wafer as the taught position.
  • the transfer robot may be further equipped with an arm configured to support the end effector.
  • the operational instruction may be an instruction to move the end effector along an expansion axis of the arm below the wafer supported by the supporting member.
  • the controller may determine a position at which the optical interference peak disappears to be the taught position. If the end effector of the transfer robot blocks the optical path of the optical element, the optical interference peak generated depending on the distance between the wafer and the reflector disappears. Therefore, this transfer robot system can determined, based on the variation of the position of the optical interference peak, the position where the end effector blocks the optical path of the optical element as the taught position in the middle of the movement of the end effector along the expansion axis.
  • the transfer robot may be further equipped with an arm configured to support the end effector.
  • the operational instruction may be an instruction to move the end effector along a rotation axis of the arm below the wafer supported by the supporting member.
  • the controller may determine a position at which the optical interference peak disappears to be the taught position. If the end effector of the transfer robot blocks the optical path of the optical element, the optical interference peak generated depending on the distance between the wafer and the reflector disappears. Therefore, this transfer robot system can determined the taught position based on a position at which the end effector blocks the optical path of the optical element in the middle of the movement of the end effector around the rotation axis.
  • a teaching method of a transfer robot configured to transfer a wafer accommodated in a wafer receptacle.
  • the transfer robot has an end effector and transfers the wafer under an operational instruction.
  • the wafer receptacle comprises a receptacle body, a first reflector and a first optical element.
  • the receptacle body has, at a front thereof, an opening through which the end effector and the wafer pass, and has a supporting member configured to support the wafer horizontally in a support space therein.
  • the first reflector is disposed below the support space within the receptacle body.
  • the first optical element is disposed above the support space to face the first reflector.
  • the first optical element is configured to output light emitted from a light source toward the first reflector and configured to receive reflected light from the first reflector.
  • the teaching method comprises: operating the transfer robot under the operational instruction; calculating an optical interference peak, which is generated between the wafer supported by the supporting member and the first reflector, based on the reflected light received by the first optical element during an operation of the transfer robot; and determining a taught position of the transfer robot based on a variation in the optical interference peak. According to the teaching method, the taught position in the support space of the wafer can be determined.
  • the wafer receptacle may further comprise a second reflector, a second optical element, a third reflector and a third optical element.
  • the second reflector is disposed at a different position from the first reflector below the support space within the receptacle body.
  • the second optical element is disposed above the support space to face the second reflector.
  • the second optical element is configured to output the light emitted from the light source toward the second reflector and configured to receive reflected light from the second reflector.
  • the third reflector is disposed at a different position from the first reflector and the second reflector below the support space within the receptacle body.
  • the third optical element is disposed above the support space to face the third reflector.
  • the third optical element is configured to output the light emitted from the light source toward the third reflector and configured to receive reflected light from the third reflector.
  • an optical interference peak generated between the wafer supported by the supporting member and the second reflector may be calculated based on the reflected light received by the second optical element, and, also, an optical interference peak generated between the wafer supported by the supporting member and the third reflector may be calculated based on the reflected light received by the third optical element.
  • the taught position of the transfer robot may be determined based on a variation of the optical interference peak corresponding to the respective optical elements during an operation of the transfer robot which is performed under the operational instruction.
  • the three pairs of the optical element and the reflector are prepared at the three different positions.
  • the variation of the optical interference peak is acquired by each pair, and the taught position is determined based on these variations. Therefore, in the teaching method, accuracy of the taught position can be improved.
  • the teaching method may further include evaluating a horizontal posture of the wafer based on the variation in the optical interference peak corresponding to the respective optical elements during the operation of the transfer robot under the operational instruction. If the wafer is inclined, a contact height between the wafer and the end effector may differ depending on a position. Thus, if the three pairs of the optical element and the reflector are provided at the three different positions, the contact height between the wafer and the end effector can be obtained at each of the three different positions. Therefore, in this teaching method, it can be determined whether the wafer is placed horizontally.
  • the transfer robot may be further equipped with an arm configured to support the end effector.
  • the operational instruction may be an instruction to move the end effector along an elevation axis of the arm below the wafer supported by the supporting member.
  • a position at which the optical interference peak starts to be shifted may be set as the taught position of the transfer robot.
  • a position of the optical interference peak is varied depending on a distance between the wafer and the reflector.
  • a position at which the end effector comes into contact with the wafer may be determined as the taught position.
  • the transfer robot may be further equipped with an arm configured to support the end effector.
  • the operational instruction may be an instruction to move the end effector along an expansion axis of the arm below the wafer supported by the supporting member.
  • the taught position may be determined based on a position at which the optical interference peak disappears. If the end effector of the transfer robot blocks the optical path of the optical element, the optical interference peak generated depending on the distance between the wafer and the reflector disappears. Therefore, in this teaching method, a position at which the end effectors blocks the optical axis of the optical element in the middle of the movement along the expansion axis can be determined as the taught position based on a variation of a position of the optical interference peak.
  • the transfer robot may be further equipped with an arm configured to support the end effector.
  • the operational instruction may be an instruction to move the end effector along a rotation axis of the arm below the wafer supported by the supporting member.
  • the taught position may be determined based on a position at which the optical interference peak disappears. If the end effector of the transfer robot blocks the optical path of the optical element, the optical interference peak generated depending on the distance between the wafer and the reflector disappears. Therefore, in this teaching method, the taught position may be determined based on a position at which the end effector blocks the optical path of the optical element in the middle of the movement of the end effector around the rotation axis.
  • a wafer receptacle comprising a receptacle body, a reflector and an optical element.
  • the receptacle body has, at a front thereof, an opening through which an end effector and a wafer pass, and has a supporting member configured to support the wafer horizontally in a support space therein.
  • the reflector is disposed below the support space within the receptacle body.
  • the optical element is disposed above the support space to face the reflector. The optical element is configured to output light toward the reflector and receive reflected light from the reflector.
  • the optical element is connected to an optical interference system which is configured to emit light to the optical element and detect an optical interference peak generated between the wafer supported by the supporting member and the reflector based on the reflected light.
  • This wafer receptacle can be used to determine the taught position in the support space of the wafer.
  • the receptacle body may be covered with a film which blocks infrared light.
  • the optical element may output the infrared light supplied from the optical interference system toward the reflector. According to this configuration, a leak of the infrared light from the receptacle can be avoided.
  • FIG. 1 is a schematic diagram illustrating an example of a substrate processing system equipped with a transfer robot system according to the exemplary embodiment.
  • the substrate processing system 1 is equipped with stages ST 1 to ST 4 , wafer receptacles FP 1 to FP 4 , a loader module LM, load lock chambers LL 1 and LL 2 , process modules PM 1 to PM 6 and a transfer chamber TC.
  • the stages ST 1 to ST 4 are arranged along one side of the loader module LM.
  • the wafer receptacles FP 1 to FP 4 are mounted on the stages ST 1 to ST 4 , respectively.
  • Each of the wafer receptacles FP 1 to FP 4 is configured to accommodate wafers W therein.
  • the loader module LM has a chamber wall which forms therein a transfer space in an atmospheric pressure.
  • the loader module LM is equipped with a transfer robot TU 1 in this transfer space.
  • the transfer robot TU 1 is configured to transfer the wafers W between the receptacles FP 1 to FP 4 and the load lock chambers LL 1 and LL 2 .
  • the load lock chambers LL 1 and LL 2 are provided between the loader module LM and the transfer chamber TC. Each of the load lock chambers LL 1 and LL 2 provides a preliminary decompression chamber.
  • the transfer chamber TC is connected to the load lock chambers LL 1 and LL 2 via gate valves.
  • the transfer chamber TC is configured as an evacuable decompression chamber, and a transfer robot TU 2 is accommodated in this decompression chamber.
  • the transfer robot TU 2 is configured to transfer the wafer W between the load lock chambers LL 1 and LL 2 and the process modules PM 1 to PM 6 and between any two of the process modules PM 1 to PM 6 .
  • the process modules PM 1 to PM 6 are connected to the transfer chamber TC via respective gate valves.
  • Each of the process modules PM 1 to PM 6 is a processing apparatus configured to perform a plasma processing on the wafer W.
  • a series of operations when a processing is performed on a wafer W are as follows, for example.
  • the transfer robot TU 1 of the loader module LM takes out the wafer W from one of the wafer receptacles FP 1 to FP 4 and transfers the wafer W into either one of the load lock chambers LL 1 and LL 2 .
  • the corresponding load lock chamber is decompressed to a preset pressure.
  • the transfer robot TU 2 of the transfer chamber TC takes out the wafer W from this load lock chamber and transfers the wafer W into any one of the process modules PM 1 to PM 6 .
  • the wafer W is processed in one or more of the process modules PM 1 to PM 6 .
  • the transfer robot TU 2 transfers the wafer W after being processed into either one of the load lock chambers LL 1 and LL 2 from the process module. Then, the transfer robot TU 1 transfers the wafer W from the load lock chamber into any one of the wafer receptacles FP 1 to FP 4 .
  • the substrate processing system 1 is further equipped with a control device MC (an example of a controller).
  • the control device MC may be a computer including a processor, a storage device such as a memory, a display device, an input/output device, a communication device, and so forth.
  • the above-described series of operations of the substrate processing system 1 are implemented under the control of the control device MC over the individual components of the substrate processing system 1 according to a program stored in the storage device.
  • FIG. 2 is a schematic diagram illustrating an example of the transfer robot system according to the exemplary embodiment.
  • the transfer robot system 2 includes the aforementioned transfer robot TU 1 configured to transfer the wafer W accommodated in the wafer receptacle (in the drawing, the wafer W accommodated in the wafer receptacle FP 1 , for example).
  • the transfer robot TU 1 has an end effector EE and transfers the wafer W in response to an operational instruction of the control device MC.
  • the control device MC outputs the operational instruction to the transfer robot.
  • the operational instruction is a control target of the transfer robot TU 1 and includes a target posture of the transfer robot TU 1 .
  • the target posture includes a taught position of the end effector EE.
  • the transfer robot TU 1 performs a control of moving the end effector EE to the taught position based on the taught position included in the operational instruction.
  • the “taught position” refers to a position of the end effector EE set by a teaching operation.
  • the end effector EE may be a pick.
  • the end effector EE is not limited to the pick and may be of a type which holds the wafer W by attraction.
  • the end effector EE may be formed of a material which does not transmit light outputted from a light source 30 of an interferometer 3 to be described later.
  • the end effector EE may be made of ceramic.
  • the end effector EE may be made of SiC, SiN, alumina (Al 2 O 3 ), or the like.
  • the transfer robot TU 1 may be equipped with an arm AM configured to support the end effector EE.
  • the transfer robot TU 1 has an elevation axis Z, an expansion axis R and a rotation axis ⁇ of the arm AM.
  • the end effector EE is configured to be moved, by the arm AM, along the elevation axis Z and the expansion axis R, and pivotable around the rotation axis ⁇ .
  • the transfer robot TU 1 operates the arm AM by using control values of the elevation axis Z, the expansion axis R and the rotation axis ⁇ as parameters. Accordingly, the end effector EE can be moved to any required taught position.
  • the transfer robot TU 1 determines the control values of the elevation axis Z, the expansion axis R and the rotation axis ⁇ such that the taught position of the end effector EE designated by the control device MC is obtained.
  • the transfer robot system 2 includes the interferometer 3 configured to determine the taught position and the wafer receptacle FP 1 .
  • the transfer robot system 2 may be equipped with a multiple number of wafer receptacles in addition to the wafer receptacle FP 1 .
  • the interferometer 3 is equipped with the light source 30 configured to emit the light and is connected to the wafer receptacle FP 1 in which the wafers W are accommodated.
  • the interferometer 3 acquires an optical interference intensity distribution by using reflected light.
  • the interferometer 3 is equipped with the light source 30 , an optical circulator 31 , an optical switch 32 and a light receiver 35 .
  • the optical switch 32 is connected to a first focuser 33 A (an example of a first optical element), a second focuser 33 B (an example of a second optical element) and a third focuser 33 C (an example of a third optical element) provided at the wafer receptacle FP 1 .
  • the light receiver 35 is connected to an operation device 36 .
  • the operation device 36 may be a computer including a processor, a storage device such as a memory, a display device, an input/output device, a communication device, and so forth. A series of operations of the interferometer 3 to be described later are carried out under the control of the operation device 36 over the individual components of the interferometer 3 according to a program stored in the storage device.
  • the operation device 36 and the control device MC shown in FIG. 1 may be configured as a single body. Further, the light source 30 , the optical circulator 31 , the optical switch 32 , the first focuser 33 A, the second focuser 33 B, the third focuser 33 C and the light receiver 35 are connected by using optical fibers.
  • the light source 30 is configured to emit measurement light having a wavelength penetrating an object placed in a measurement environment.
  • a wavelength-sweep light source is used as the light source 30 .
  • the object placed in the measurement environment may have, by way of example, a plate shape, and has a front surface and a rear surface opposite to the front surface.
  • both of the surfaces of the object placed in the measurement environment may be mirror-polished.
  • the object placed in the measurement environment may be a window member provided at the wafer receptacle FP 1 or the wafer W, and may be made of Si (silicon), SiO 2 (quarts), Al 2 O 3 (sapphire), or the like.
  • An example of the measurement light capable of penetrating the object made of such a material may be infrared light.
  • the optical circulator 31 is connected to the light source 30 , the optical switch 32 and the light receiver 35 .
  • the optical circulator 31 propagates the measurement light emitted from the light source 30 to the optical switch 32 .
  • the optical switch 32 has one input terminal and three output terminals. The input terminal is connected to the optical circulator 31 .
  • the three output terminals are respectively connected to the first focuser 33 A, the second focuser 33 B and the third focuser 33 C via corresponding optical fibers.
  • the optical switch 32 is configured such that an output destination is switchable between these three output terminals.
  • the optical switch 32 receives the light from the optical circulator 31 through the input terminal and outputs the received light to the three output terminals alternately.
  • Each of the first focuser 33 A, the second focuser 33 B and the third focuser 33 C outputs the measurement light emitted from the light source 30 as output light and receives reflected light.
  • the measurement light is reflected by a constituent component of the wafer receptacle FP 1 (for example, a first mirror 34 A, a second mirror 34 B, a third mirror 34 C) and the wafer W accommodated therein.
  • a constituent component of the wafer receptacle FP 1 for example, a first mirror 34 A, a second mirror 34 B, a third mirror 34 C
  • Each of the first focuser 33 A, the second focuser 33 B and the third focuser 33 C propagates the reflected light to the optical switch 32 .
  • the optical switch 32 propagates the reflected lights obtained by the first focuser 33 A, the second focuser 33 B and the third focuser 33 C to the optical circulator 31 alternately.
  • the optical circulator 31 propagates the reflected lights to the light receiver 35 .
  • the light receiver 35 measures spectrum of the reflected lights obtained from the light circulator 31 . This reflected light spectrum shows an intensity distribution relying on a wavelength or a frequency of the reflected light. The reflected light spectrum is acquired for each focuser.
  • the light receiver 35 outputs the reflected light spectrum to the operation device 36 .
  • the operation device 36 performs Fourier transform on the acquired reflected light spectrum to calculate an optical interference intensity distribution indicating a relationship between an optical path length and a signal intensity.
  • the interferometer 3 is capable of calculating an optical interference peak generated between the wafer W and the constituent components of the wafer receptacle FP 1 (for example, the first mirror 34 A, the second mirror 34 B and the third mirror 34 C to be described later).
  • the operation device 36 outputs the optical interference peak for each focuser to the control device MC. An operation of the control device MC will be elaborate later.
  • FIG. 3 is a perspective view illustrating an example of the wafer receptacle according to the exemplary embodiment.
  • FIG. 4 is a cross sectional view illustrating the example of the wafer receptacle according to the exemplary embodiment.
  • the wafer receptacle FP 1 is equipped with a receptacle body 41 .
  • the receptacle body 41 has a box shape and has therein a space in which the wafers W are accommodated.
  • Formed at the front of the receptacle body 41 is an opening OP through which the end effector EE and the wafer W can pass.
  • the opening OP is closed by a non-illustrated cover when it is not used in the substrate processing system 1 .
  • the receptacle body 41 is equipped with supporting members 42 configured to support the wafers W horizontally within a support space S therein.
  • the supporting members 42 are provided at two opposite side surfaces of the receptacle body 41 to face each other.
  • Each supporting member 42 has a support portion which is protruded horizontally.
  • Each wafer W is horizontally supported from below by a pair of support portions facing each other at the two opposite side surfaces.
  • a height of the support space S ranges from the support portion provided at the lowest position to the support portion provided at the highest position.
  • the end effector EE is capable of lifting the wafer W up from below to allow the wafer W to be spaced apart from the support portions and taking the wafer W out.
  • the end effector EE is also capable of lowering the wafer W down from above, thus allowing the wafer W to be placed on the support portions.
  • the receptacle body 41 is provided with the first mirror 34 A (an example of a first reflector), the second mirror 34 B (an example of a second reflector) and the third mirror 34 C (an example of a third reflector).
  • Each of the first mirror 34 A, the second mirror 34 B and the third mirror 34 C is a member which specularly reflects the measurement light on a surface thereof.
  • the first mirror 34 A, the second mirror 34 B and the third mirror 34 C are provided below the support space S within the receptacle body 41 .
  • the first mirror 34 A, the second mirror 34 B and the third mirror 34 C are provided on an inner bottom surface of the receptacle body 41 .
  • the first mirror 34 A, the second mirror 34 B and the third mirror 34 C may be placed at different positions.
  • the first mirror 34 A may be placed on an axis extending inwards from the front of the receptacle body 41 and passing through a center of the wafer W.
  • the second mirror 34 B and the third mirror 34 C may be placed on an axis extending toward the two opposite side surfaces of the receptacle body 41 and passing through the center of the wafer W.
  • the second mirror 34 B and the third mirror 34 C may be symmetrically arranged with respect to the center of the wafer W.
  • the receptacle body 41 is equipped with the first focuser 33 A, the second focuser 33 B and the third focuser 33 C.
  • the first focuser 33 A, the second focuser 33 B and the third focuser 33 C are provided above the support space S.
  • the first focuser 33 A, the second focuser 33 B and the third focuser 33 C are provided on a top surface of the receptacle body 41 , that is, provided at the outside of the receptacle body 41 .
  • first window 43 A, a second window 43 B and a third window 43 C are provided on the top surface of the receptacle body 41 to correspond to the focusers 33 A to 33 C, respectively.
  • Each of the first window 43 A, the second window 43 B and the third window 43 C may be made of a member capable of transmitting the measurement light and the reflected light.
  • One side of each of the first window 43 A, the second window 43 B and the third window 43 C may be coated with an antireflection film.
  • the first focuser 33 A is disposed to face the first mirror 34 A, and outputs the measurement light emitted from the light source 30 toward the first mirror 34 A and receives the reflected light therefrom.
  • the second focuser 33 B is disposed to face the second mirror 34 B, and outputs the measurement light emitted from the light source 30 toward the second mirror 34 B and receives the reflected light therefrom.
  • the third focuser 33 C is disposed to face the third mirror 34 C, and outputs the measurement light emitted from the light source 30 toward the third mirror 34 C and receives the reflected light therefrom.
  • the wafer receptacle FP 1 may not be equipped with the pair of the second focuser 33 B and the second mirror 34 B and the pair of the third focuser 33 C and the third mirror 34 C, or may be equipped with additional pairs.
  • a flange 44 for a transfer may be provided on the top surface of the receptacle body 41 .
  • the wafer receptacle FP 1 can be automatically transferred.
  • a surface of the receptacle body 41 may be covered with an infrared-proof film 45 which blocks the infrared light. With this configuration, a leak of the infrared light from the receptacle body 41 can be suppressed.
  • the receptacle body 41 is capable of accommodating therein a wafer for use in teaching (hereinafter, simply referred to as “teaching wafer”).
  • the teaching wafer may be the same as the wafer W.
  • the number of the teaching wafer may be at least one.
  • the receptacle body 41 accommodates a first teaching wafer TW 1 and a second teaching wafer TW 2 therein.
  • FIG. 5 is a schematic diagram illustrating an example relationship between the end effector and an irradiation position.
  • a first irradiation position 35 A is an irradiation position of the first focuser 33 A.
  • a second irradiation position 35 B is an irradiation position of the second focuser 33 B.
  • a third irradiation position 35 C is an irradiation position of the third focuser 33 C.
  • the first irradiation position 35 A is located on an axis WA 1 extending inwards from the front of the receptacle body 41 and passing a center WP of the second teaching wafer TW 2 .
  • the second irradiation position 35 B and the third irradiation position 35 C lie on an axis WA 2 extending towards the two opposite side surfaces of the receptacle body 41 and passing through the center WP of the second teaching wafer TW 2 .
  • the second irradiation position 35 B and the third irradiation position 35 C are arranged symmetrically with respect to the center WP of the second teaching wafer TW 2 .
  • the first irradiation position 35 A, the second irradiation position 35 B and the third irradiation position 35 C may be set not to be overlapped with the end effector EE when the end effector EE is placed at a position where the end effector EE lifts the second teaching wafer TW 2 up.
  • the position of the end effector EE shown in FIG. 5 will be defined as a “first position”.
  • light IR outputted from the second focuser 33 B reaches the second mirror 34 B after passing through the second window 43 B, the first teaching wafer TW 1 and the second teaching wafer TW 2 .
  • the light IR are reflected on a rear surface of the second window 43 B, a front surface and a rear surface of the first teaching wafer TW 1 , a front surface and a rear surface of the second teaching wafer TW 2 and a surface of the second mirror 34 B. These reflections are acquired as a reflected light spectrum by the interferometer 3 .
  • reflected light spectrums corresponding to the first focuser 33 A and the third focuser 33 C are also acquired.
  • the reflected light spectrum is subjected to Fourier transform by the interferometer 3 , so that the optical interference intensity distribution is obtained.
  • the optical interference peaks which are dependent on distances between the individual members, appear.
  • FIG. 6 shows an example of the optical interference intensity distribution when the end effector EE is located at the first position.
  • a horizontal axis represents an optical path length [m] and a vertical axis indicates a signal intensity [a.u].
  • Peaks PW are the optical interference peaks which appear due to the reflections on the front surfaces and the rear surfaces of the first and second teaching wafers TW 1 and TW 2 . That is, the peak PW is generated due to a thickness of the wafer.
  • a peak PT 1 shown in FIG. 6 is the optical interference peak which corresponds to a distance L 1 between the rear surface of the second window 43 B and the front surface of the first teaching wafer TW 1 .
  • a peak PT 2 is the optical interference peak which corresponds to a distance L 2 between the rear surface of the second teaching wafer TW 2 and the front surface of the second mirror 34 B.
  • these peaks PT 1 and PT 2 may be set to appear at positions except the positions of the peaks PW which are generated due to the thickness of the wafer W.
  • the first teaching wafer TW 1 and the second teaching wafer TW 2 may be placed such that the distances L 1 and L 2 are equal to or larger than 10 mm.
  • FIG. 7 shows an example of the optical interference intensity distribution when the end effector is moved along the expansion axis or around the rotation axis. As can be seen from FIG. 7 , if the end effector EE blocks the optical axis of the second focuser 33 B, the peak PT 2 disappears on the optical interference intensity distribution of the second focuser 33 B.
  • the end effector EE is moved to the left in the left-and-right direction TA from the first position shown in FIG. 5 by the movement of the arm AM around the rotation axis ⁇ .
  • the end effector EE is overlapped with the third irradiation position 35 C of the third focuser 33 C. If the end effector EE blocks an optical axis of the third focuser 33 C in this way, the light IR does not reach the front surface of the third mirror 34 C.
  • the peak PT 2 disappears on the optical interference intensity distribution of the third focuser 33 C.
  • the end effector EE is moved in a back-and-forth direction along the expansion axis R from the first position shown in FIG. 5 by a movement of the arm AM along the expansion axis R.
  • the end effector EE is overlapped with the first irradiation position 35 A of the first focuser 33 A. If the end effector EE blocks an optical axis of the first focuser 33 A in this way, the light IR does not reach the front surface of the first mirror 34 A.
  • the peak PT 2 disappears on the optical interference intensity distribution of the first focuser 33 A.
  • FIG. 8 shows an example of the optical interference intensity distribution when the end effector is moved along the elevation axis.
  • the peak PT 2 is shifted in a direction in which the distance is increased along with the upward movement of the second teaching wafer TW 2 (to the right in the drawing).
  • the shift of the peak PT 2 is also observed.
  • the control device MC determines the taught position of the transfer robot TU 1 based on the variation of the peak PT 2 during the operation of the transfer robot TU 1 which is performed under the operational instruction.
  • the control device MC has a function of monitoring the peak PT 2 .
  • the operation device 36 stores the position of the peak PT 2 in time series and determines whether the position and the intensity of the peak PT 2 has changed.
  • the control device MC carries out the following operations to determine the taught position of the arm AM with respect to the expansion axis R or the rotation axis ⁇ .
  • FIG. 9 is an example flowchart of a taught position determination processing. Determination upon the taught position of the arm AM with respect to the expansion axis R will be first explained.
  • the interferometer 3 starts acquisition of the optical interference intensity distribution corresponding to the first focuser 33 A (process S 10 ). Then, the control device MC outputs, as the operational instruction, to the transfer robot TU 1 , an instruction to move the end effector EE along the expansion axis R of the arm AM under the second teaching wafer TW 2 supported by the supporting members 42 . Accordingly, the end effector EE is begun to be moved along the expansion axis R (process S 12 ).
  • the interferometer 3 acquires the optical interference intensity distribution corresponding to the first focuser 33 A.
  • the control device MC finds out a timing when the peak PT 2 has disappeared on the optical interference intensity distribution corresponding to the first focuser 33 A acquired from the interferometer 3 (process S 14 ).
  • the control device MC sets, as a sensor detection position, the position of the end effector EE at the timing when the peak PT 2 has disappeared. Then, the control device MC calculates and determines the taught position of the arm AM with respect to the expansion axis R based on the sensor detection position (process S 16 ). Then, the control device MC ends the taught position determination processing.
  • the control device MC determines whether the movement of the arm AM along the expansion axis R satisfies an end condition (process S 18 ). If the end condition is met (process S 18 : YES), the control device MC ends the taught position determination processing. If the end condition is not satisfied (process S 18 : NO), however, the control device MC carries on the monitoring of the peak PT 2 . Through the above-described operations, the taught position determination processing shown in FIG. 9 is ended.
  • the interferometer 3 starts acquisition of the optical interference intensity distributions corresponding to the second focuser 33 B and the third focuser 33 C (process S 10 ). Then, the control device MC outputs, as the operational instruction, to the transfer robot TU 1 , an instruction to move the end effector EE around the rotation axis ⁇ of the arm AM under the second teaching wafer TW 2 supported by the supporting members 42 . Accordingly, the end effector EE is begun to be moved around the rotation axis ⁇ (process S 12 ).
  • the interferometer 3 acquires the optical interference intensity distributions corresponding to the second focuser 33 B and the third focuser 33 C.
  • the control device MC finds out a timing when the peak PT 2 has disappeared on the optical interference intensity distributions corresponding to the second focuser 33 B and the third focuser 33 C acquired from the interferometer 3 (process S 14 ).
  • the control device MC sets, as the sensor detection positions, the positions of the end effector EE at the timing when the peak PT 2 has disappeared. Then, the control device MC calculates and determines the taught position of the arm AM with respect to the rotation axis ⁇ based on the sensor detection position of the second focuser 33 B and the sensor detection position of the third focuser 33 C (process S 16 ). Then, the control device MC ends the taught position determination processing.
  • the control device MC determines whether the movement of the arm AM around the rotation axis ⁇ satisfies an end condition (process S 18 ). If the end condition is met (process S 18 : YES), the control device MC ends the taught position determination processing. If the end condition is not satisfied (process S 18 : NO), however, the control device MC carries on the monitoring of the peak PT 2 . Through the above-described operations, the taught position determination processing shown in FIG. 9 is ended.
  • FIG. 10 is an example flowchart of the taught position determination processing therefor.
  • the interferometer 3 starts acquisition of the optical interference intensity distribution corresponding to each focuser (process S 20 ). Then, the control device MC outputs, as the operational instruction, to the transfer robot TU 1 , an instruction to move the end effector EE around the elevation axis Z of the arm AM under the second teaching wafer TW 2 supported by the supporting members 42 . Accordingly, the end effector EE is begun to be moved along the elevation axis Z (process S 22 ).
  • the interferometer 3 acquires the optical interference intensity distribution corresponding to each focuser.
  • the control device MC finds out a timing when the peak PT 2 has been shifted on the optical interference intensity distribution corresponding to each focuser acquired from the interferometer 3 (process S 24 ).
  • the control device MC sets, as the sensor detection position, the position of the end effector EE at the timing when the peak PT 2 has been shifted. Then, the control device MC sets the sensor detection position as the taught position of the arm AM with respect to the elevation axis Z (process S 26 ). Then, the control device MC ends the taught position determination processing.
  • the control device MC determines whether the movement of the arm AM with respect to the elevation axis Z satisfies an end condition (process S 28 ). If the end condition is met (process S 28 : YES), the control device MC ends the taught position determination processing. If the end condition is not satisfied (process 28 : NO), however, the control device MC carries on the monitoring of the peak PT 2 . Through the above-described operations, the taught position determination processing shown in FIG. 10 is ended.
  • the control device MC may evaluate a horizontal posture of the second teaching wafer TW 2 based on the variation of the peak PT 2 calculated for each focuser during the operation of the transfer robot TU 1 which is performed under the operational instruction. By way of example, the control device MC may determine that the second teaching wafer TW 2 has the horizontal posture when the timing of the shift of each peak PT 2 is included in a preset range.
  • the control device MC may evaluate a horizontal posture of the first teaching wafer TW 1 .
  • the control device MC lifts the first teaching wafer TW 1 up and evaluates the horizontal posture of the first teaching wafer TW 1 based on the variation of the peak PT 1 calculated for each focuser.
  • the control device MC may determine that the first teaching wafer TW 1 has the horizontal posture when the timing of the shift of each peak PT 1 is included in a preset range.
  • the control device MC may make a determination that the wafer receptacle FP 1 is not placed on the stage ST 1 accurately if neither the first teaching wafer TW 1 nor the second teaching wafer TW 2 is in the horizontal posture and degrees of inclination of these two teaching wafers are same. As mentioned here, the control device MC may evaluate the degree of inclination of the wafer receptacle FP 1 . In such a case, a distance between the first teaching wafer TW 1 and the second teaching wafer TW 2 may be set to be as large as possible.
  • the light is outputted from the first focuser 33 A disposed above the support space S of the wafer W toward the first mirror 34 A disposed below the support space S.
  • This output light reaches the first mirror 34 A after passing through the object located on the optical path.
  • the light is reflected by the first mirror 34 A, and the reflected light arrives at the first focuser 33 A after passing through the object located on the optical path.
  • the optical interference intensity distribution having the optical interference peak in which the thickness and the position of the object located on the optical path is included is obtained based on the reflected light by the interferometer 3 . If the end effector EE of the transfer robot TU 1 blocks the optical path of the first focuser 33 A, the optical interference peak disappears.
  • the position of the optical interference peak is shifted.
  • the taught position of the transfer robot TU 1 is determined by the control device MC based on the variation of the optical interference peak during the operation of the transfer robot TU 1 which is carried out under the operational instruction. As stated above, according to the transfer robot system 2 , the taught position in the support space S of the wafer W can be obtained.
  • the variation of the optical interference peak of each of the first focuser 33 A, the second focuser 33 B and the third focuser 33 C is acquired, and the taught position is determined based on these variations.
  • the accuracy of the taught position can be improved.
  • the transfer robot system 2 According to the transfer robot system 2 , a contact height between the wafer and the end effector at each position can be acquired based on the variations of the optical interference peaks of the first focuser 33 A, the second focuser 33 B and the third focuser 33 C. Therefore, the transfer robot system 2 is capable of determining whether or not the wafer is placed horizontally.
  • a position where the end effector EE comes into contact with the wafer W may be determined as the taught position.
  • the wafer receptacle FP 1 according to the exemplary embodiment is used.
  • the wafer receptacle FP 1 accommodates only the second teaching wafer TW 2 therein.
  • the optical interference intensity distribution corresponding to the second focuser 33 B is obtained.
  • a focal length is set to be in the range from 150 mm to 200 mm.
  • FIG. 11 is a diagram illustrating a measurement position in the experimental example.
  • a thickness of the second window 43 B is set to be t 1 ; a distance between the second window 43 B and the second teaching wafer TW 2 , t 2 ; a thickness of the second teaching wafer TW 2 , t 3 ; and a distance between the second teaching wafer TW 2 and the second mirror 34 B, t 4 .
  • the end effector EE is placed at a reference position shown in FIG. 5 , and the optical interference intensity distribution is obtained. Then, the end effector EE is moved to the right to block the optical axis of the second focuser 33 B, and the optical interference intensity distribution is obtained. The result is shown in FIG. 12 .
  • FIG. 12 provides graphs showing an example before and after the optical interference peak disappears.
  • An upper graph in FIG. 12 is the optical interference intensity distribution acquired when the end effector EE is located at the reference position shown in FIG. 5 .
  • a lower graph in FIG. 12 is the optical interference intensity distribution acquired when the end effector EE is moved to the position where it blocks the optical axis of the second focuser 33 B.
  • the optical interference peak corresponding to the distance t 4 between the second teaching wafer TW 2 and the second mirror 34 B is found to disappear.
  • the position of the end effector EE can be detected based on the disappearance of the optical interference peak.
  • FIG. 13 provides graphs showing an example before and after the optical interference peak is shifted.
  • An upper graph in FIG. 13 is the optical interference intensity distribution acquired when the end effector EE is located at the reference position shown in FIG. 5 .
  • a lower graph in FIG. 13 is the optical interference intensity distribution acquired when the end effector EE lifts up the second teaching wafer TW 2 .
  • the optical interference peak corresponding to the distance t 4 between the second teaching wafer TW 2 and the second mirror 34 B is found to be shifted.
  • a contact position between the end effector EE and the wafer W can be detected based on the shift of the optical interference peak.
  • the exemplary embodiments have been described. However, it should be noted that the exemplary embodiments are not intended to be anyway limiting. The above exemplary embodiments can be omitted, replaced or modified in various ways. Further, a new exemplary embodiment can be implemented by combining elements in the various exemplary embodiments.
  • the optical element is not limited to the focuser.
  • the optical element is not particularly limited as long as it has the function of irradiating the light to the object and acquiring the reflected light from the object.
  • the optical element may be, by way of non-limiting example, a collimator.
  • a SLD Super Luminescent Diode
  • a spectrometer may be used as the light receiver 35 .

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