JPS55151329A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55151329A
JPS55151329A JP5886379A JP5886379A JPS55151329A JP S55151329 A JPS55151329 A JP S55151329A JP 5886379 A JP5886379 A JP 5886379A JP 5886379 A JP5886379 A JP 5886379A JP S55151329 A JPS55151329 A JP S55151329A
Authority
JP
Japan
Prior art keywords
semiconductor
lump
cluster
vicinity
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5886379A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP5886379A priority Critical patent/JPS55151329A/en
Publication of JPS55151329A publication Critical patent/JPS55151329A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To provide a polycrystal or amorphous thin film having mean life in the vicinity of a monocrystal semiconductor at the carrier by activating or reacting the constituent element of nonmonocrystalline semiconductor in a reduced pressure reaction system and bonding the hydrogen or halogenide therewith. CONSTITUTION:A substrate 19 is retained at a susceptor 20 in a reaction tube 25 capable of being reduced in pressure to 0.001-10Torr, and reactive gas is introduced through inlets 12, 13, 14. Impurity dope is introduced through another inlets 15, 16. With such a construction, Si or Ge nonmonocrytal is formed. When hydrogen or halogen element are reacted therewith, these elements are locally existed in high density in the vicinity of the crystal boundary of the nonmonocrystal semiconductor or in the periphery of the lump of cluster to electrically neutralize the free bonds frequently existed at the periphery of the crystal boundary and lump of cluster. Therefore, the carrier can incorporate intrinsic life time like the monocrystal semiconductor.
JP5886379A 1979-05-14 1979-05-14 Fabricating method of semiconductor device Pending JPS55151329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5886379A JPS55151329A (en) 1979-05-14 1979-05-14 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5886379A JPS55151329A (en) 1979-05-14 1979-05-14 Fabricating method of semiconductor device

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP56064524A Division JPS57109326A (en) 1981-04-27 1981-04-27 Semiconductor device
JP56064526A Division JPS57109386A (en) 1981-04-27 1981-04-27 Semiconductor device
JP56064525A Division JPS57109385A (en) 1981-04-27 1981-04-27 Semiconductor device
JP56064527A Division JPS5743478A (en) 1981-04-27 1981-04-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55151329A true JPS55151329A (en) 1980-11-25

Family

ID=13096552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5886379A Pending JPS55151329A (en) 1979-05-14 1979-05-14 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55151329A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743478A (en) * 1981-04-27 1982-03-11 Shunpei Yamazaki Semiconductor device
JPS57109326A (en) * 1981-04-27 1982-07-07 Shunpei Yamazaki Semiconductor device
JPS57160123A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Semiconductor device
JPS5827365A (en) * 1981-08-10 1983-02-18 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPS5827364A (en) * 1981-08-10 1983-02-18 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
JPS5853865A (en) * 1981-09-28 1983-03-30 Komatsu Denshi Kinzoku Kk Preparation of amorphous silicon solar battery
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS58164221A (en) * 1982-03-25 1983-09-29 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS5978528A (en) * 1982-09-24 1984-05-07 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Amorphous semiconductor alloy using ultrashort wave energy and method of producing element thereof
JPS59100515A (en) * 1982-11-30 1984-06-09 Seisan Gijutsu Shinko Kyokai Thin film generating device
JPS59141278A (en) * 1983-02-02 1984-08-13 Fuji Xerox Co Ltd Photoelectric conversion element and manufacture thereof
JPS604273A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS604274A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS6066876A (en) * 1983-09-22 1985-04-17 Fuji Xerox Co Ltd Photoelectric conversion element
JPS60210884A (en) * 1984-06-29 1985-10-23 Hitachi Ltd Photo reception surface
JPS6247170A (en) * 1985-08-23 1987-02-28 ハイマン　オプトエレクトロニクス　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング Highly reverse resistance type diode device
JPS6347920A (en) * 1986-08-18 1988-02-29 Hitachi Ltd Manufacture of crystalline semiconductor device
JPS63285923A (en) * 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk Manufacture of silicon-germanium alloy
JPH06188421A (en) * 1993-04-02 1994-07-08 Semiconductor Energy Lab Co Ltd Insulation gate type field effect semiconductor device
JPH06188448A (en) * 1993-04-02 1994-07-08 Semiconductor Energy Lab Co Ltd Phototransistor

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160123A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Semiconductor device
JPH0363208B2 (en) * 1981-03-30 1991-09-30 Hitachi Ltd
JPS5743478A (en) * 1981-04-27 1982-03-11 Shunpei Yamazaki Semiconductor device
JPS57109326A (en) * 1981-04-27 1982-07-07 Shunpei Yamazaki Semiconductor device
JPS5827365A (en) * 1981-08-10 1983-02-18 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPS5827364A (en) * 1981-08-10 1983-02-18 Semiconductor Energy Lab Co Ltd Insulated gate type field effect semiconductor device
JPS5853865A (en) * 1981-09-28 1983-03-30 Komatsu Denshi Kinzoku Kk Preparation of amorphous silicon solar battery
JPS5884464A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021366B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS5884466A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPS5884465A (en) * 1981-11-13 1983-05-20 Canon Inc Semiconductor element
JPH021367B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPH021365B2 (en) * 1981-11-13 1990-01-11 Canon Kk
JPS58164221A (en) * 1982-03-25 1983-09-29 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS5978528A (en) * 1982-09-24 1984-05-07 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Amorphous semiconductor alloy using ultrashort wave energy and method of producing element thereof
JPH0419703B2 (en) * 1982-09-24 1992-03-31 Enaajii Konbaajon Debaisesu Inc
JPH0234911A (en) * 1982-09-24 1990-02-05 Energy Conversion Devices Inc Manufacture of amorphous semiconductor alloy and device using super ultrashort wave energy
JPS59100515A (en) * 1982-11-30 1984-06-09 Seisan Gijutsu Shinko Kyokai Thin film generating device
JPS59141278A (en) * 1983-02-02 1984-08-13 Fuji Xerox Co Ltd Photoelectric conversion element and manufacture thereof
JPS604274A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPH0473311B2 (en) * 1983-06-22 1992-11-20 Tokyo Shibaura Electric Co
JPH0473312B2 (en) * 1983-06-22 1992-11-20 Tokyo Shibaura Electric Co
JPS604273A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS6066876A (en) * 1983-09-22 1985-04-17 Fuji Xerox Co Ltd Photoelectric conversion element
JPS60210884A (en) * 1984-06-29 1985-10-23 Hitachi Ltd Photo reception surface
JPH051634B2 (en) * 1984-06-29 1993-01-08 Hitachi Ltd
JPS6247170A (en) * 1985-08-23 1987-02-28 ハイマン　オプトエレクトロニクス　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング Highly reverse resistance type diode device
JPS6347920A (en) * 1986-08-18 1988-02-29 Hitachi Ltd Manufacture of crystalline semiconductor device
JPS63285923A (en) * 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk Manufacture of silicon-germanium alloy
JPH0573323B2 (en) * 1987-05-19 1993-10-14 Komatsu Denshi Kinzoku Kk
JPH06188421A (en) * 1993-04-02 1994-07-08 Semiconductor Energy Lab Co Ltd Insulation gate type field effect semiconductor device
JPH06188448A (en) * 1993-04-02 1994-07-08 Semiconductor Energy Lab Co Ltd Phototransistor
JPH07105523B2 (en) * 1993-04-02 1995-11-13 株式会社 半導体エネルギー研究所 Photo transistor

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