UA116899U - METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167) - Google Patents
METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167)Info
- Publication number
- UA116899U UA116899U UAU201612729U UAU201612729U UA116899U UA 116899 U UA116899 U UA 116899U UA U201612729 U UAU201612729 U UA U201612729U UA U201612729 U UAU201612729 U UA U201612729U UA 116899 U UA116899 U UA 116899U
- Authority
- UA
- Ukraine
- Prior art keywords
- single crystals
- agxgaxge1
- xse2
- obtaining
- zone
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Спосіб отримання монокристалів AgxGaxGe1-xSe2 (x=0,333; 0,250; 0,200; 0,167) з розплаву включає компоновку шихти з простих речовин Ag, Ga, Ge, Se відповідно до стехіометричного складу, синтез її та вирощування монокристалів вертикальним методом Бріджмена-Стокбаргера. Синтез і ріст проводять в одному і тому ж ростовому кварцовому контейнері. Процес вирощування монокристалів проводять, при наступних параметрах: температура в зоні розплаву 1200-1250 Κ температура в зоні відпалу 750-770 Κ градієнт температури в зоні кристалізації 3-5 Κ/мм швидкість росту 0,2-0,4 мм/год. час відпалу 200-250 год. швидкість охолодження 5 Κ/год.The method of obtaining single crystals AgxGaxGe1-xSe2 (x = 0,333; 0,250; 0,200; 0,167) from the melt involves the arrangement of the charge of simple substances Ag, Ga, Ge, Se according to the stoichiometric composition, synthesis and cultivation of single crystals by the Bridgman-Stockbarger method. Synthesis and growth are carried out in the same growth quartz container. The process of growing single crystals is carried out at the following parameters: temperature in the melt zone 1200-1250 Κ temperature in the annealing zone 750-770 Κ temperature gradient in the crystallization zone 3-5 Κ / mm growth rate 0.2-0.4 mm / h. annealing time 200-250 hours. cooling rate 5 Κ / h.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU201612729U UA116899U (en) | 2016-12-13 | 2016-12-13 | METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU201612729U UA116899U (en) | 2016-12-13 | 2016-12-13 | METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167) |
Publications (1)
Publication Number | Publication Date |
---|---|
UA116899U true UA116899U (en) | 2017-06-12 |
Family
ID=59092535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAU201612729U UA116899U (en) | 2016-12-13 | 2016-12-13 | METHOD OF OBTAINING AgxGaxGe1-xSe2 Single Crystals (X = 0.333; 0.250; 0.200; 0.167) |
Country Status (1)
Country | Link |
---|---|
UA (1) | UA116899U (en) |
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2016
- 2016-12-13 UA UAU201612729U patent/UA116899U/en unknown
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