UA111911U - METHOD OF OBTAINING MONO CRYSTALS Ag0,5Pb1,75GeS4 - Google Patents
METHOD OF OBTAINING MONO CRYSTALS Ag0,5Pb1,75GeS4Info
- Publication number
- UA111911U UA111911U UAU201605383U UAU201605383U UA111911U UA 111911 U UA111911 U UA 111911U UA U201605383 U UAU201605383 U UA U201605383U UA U201605383 U UAU201605383 U UA U201605383U UA 111911 U UA111911 U UA 111911U
- Authority
- UA
- Ukraine
- Prior art keywords
- growth
- single crystals
- temperature
- 75ges4
- synthesis
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Спосіб отримання монокристалів Ag0,5Pb1,75GeS4 з розплаву включає компоновку шихти з простих речовин Ag, Pb, Ge, S відповідно до стехіометричного складу, синтез її та вирощування монокристалів вертикальним методом Бріджмена-Стокбаргера, при цьому синтез і ріст проводять в одному і тому ж ростовому кварцовому контейнері. Процес вирощування монокристалів проводять при наступних параметрах: температура зони розплаву - 1000-1040 Κ; температура зони росту - 760-780 Κ; градієнт температур на границі рідкої та твердої фаз - 15-18 Κ/мм; швидкість опускання ростового кварцового контейнера - 4-6 мм/добу; швидкість охолодження до температури відпалу - 8-10 Κ/год.; температура в зоні відпалу - 660-680 Κ; час відпалу - 200-250 год.; швидкість охолодження - 10 Κ/год.The method of obtaining single crystals Ag0,5Pb1,75GeS4 from the melt involves the arrangement of the charge of simple substances Ag, Pb, Ge, S in accordance with the stoichiometric composition, synthesis and cultivation of single crystals by the vertical Bridgman-Stockbarger method, while the synthesis and growth is carried out in the same growth quartz container. The process of growing single crystals is carried out at the following parameters: melt zone temperature - 1000-1040 Κ; growth zone temperature - 760-780 Κ; temperature gradient at the boundary of liquid and solid phases - 15-18 Κ / mm; lowering speed of growth quartz container - 4-6 mm / day; cooling rate to annealing temperature - 8-10 Κ / h .; annealing temperature - 660-680 Κ; annealing time - 200-250 hours; cooling rate - 10 Κ / h.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU201605383U UA111911U (en) | 2016-05-18 | 2016-05-18 | METHOD OF OBTAINING MONO CRYSTALS Ag0,5Pb1,75GeS4 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
UAU201605383U UA111911U (en) | 2016-05-18 | 2016-05-18 | METHOD OF OBTAINING MONO CRYSTALS Ag0,5Pb1,75GeS4 |
Publications (1)
Publication Number | Publication Date |
---|---|
UA111911U true UA111911U (en) | 2016-11-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAU201605383U UA111911U (en) | 2016-05-18 | 2016-05-18 | METHOD OF OBTAINING MONO CRYSTALS Ag0,5Pb1,75GeS4 |
Country Status (1)
Country | Link |
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UA (1) | UA111911U (en) |
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2016
- 2016-05-18 UA UAU201605383U patent/UA111911U/en unknown
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