TWM504091U - Device for direct arc formation of carbon nanotube and carbon nanotube thereof - Google Patents
Device for direct arc formation of carbon nanotube and carbon nanotube thereof Download PDFInfo
- Publication number
- TWM504091U TWM504091U TW103218283U TW103218283U TWM504091U TW M504091 U TWM504091 U TW M504091U TW 103218283 U TW103218283 U TW 103218283U TW 103218283 U TW103218283 U TW 103218283U TW M504091 U TWM504091 U TW M504091U
- Authority
- TW
- Taiwan
- Prior art keywords
- carbon
- carbon nanotube
- nucleated
- arc
- graphite
- Prior art date
Links
Description
本創作係有關一種碳奈米管，特別是有關一種直接電弧生成碳奈米管裝置及其碳奈米管。This creation relates to a carbon nanotube, and more particularly to a direct arc-forming carbon nanotube device and a carbon nanotube.
1991年首次於使用碳電弧中發現直徑小於10奈米(nm)而長度可達1微米(um)之碳奈米管。碳奈米管通常範圍從幾奈米到幾十奈米的直徑，長度只有幾奈米。因為幾何形狀呈現各向異性的一維電子特性，碳奈米管具有最大的電流密度可以使每平方厘米流過1,000,000安培電流，這是銅的100倍以上。另外，相對於熱傳導，碳奈米管是高熱傳導係數銅的10倍以上。碳奈米管電極材料的進一步期望的屬性的因素包括高表面積、低質量密度與良好奈米疏水特性可以為電荷在電極/鉑觸媒三相界面的良好排水和通氣的區域內和導電性，高表面積，化學穩定性和高的導電性。For the first time in 1991, a carbon nanotube having a diameter of less than 10 nanometers (nm) and a length of up to 1 micrometer (um) was found in a carbon arc. Carbon nanotubes typically range in diameter from a few nanometers to tens of nanometers and are only a few nanometers in length. Because the geometry exhibits anisotropic one-dimensional electronic properties, the carbon nanotubes have a maximum current density that allows 1,000,000 amps per square centimeter to flow, which is more than 100 times that of copper. In addition, the carbon nanotubes are 10 times or more higher than the heat transfer coefficient of copper. Further desirable properties of the carbon nanotube electrode material include high surface area, low mass density, and good nano-hydrophobic properties that can be within the well-drained and ventilated regions of the electrode/platinum catalyst three-phase interface and conductivity. High surface area, chemical stability and high electrical conductivity.
奈米管可分為水平結構和垂直結構。水平碳奈米管顯示出電子流動的方向平行地流到它們被形成在其上基板的水平面。奈米管表現出電子從頂源在通往在其上形成的襯底再以水平方向流出。它通常被理解的是，具有方向性之奈米管提供和/或允許更短的路徑。此外，彼此奈米管間顯示了疏水特性，堤供更好的排水與通氣特性。因此，具有成長奈米管具有比纏繞更奈米管如巴克紙更好的性能。Nanotubes can be divided into horizontal structures and vertical structures. The horizontal carbon nanotubes show that the direction of electron flow flows in parallel to the level at which they are formed on the substrate. The nanotubes exhibit electrons flowing from the top source to the substrate formed thereon and then flowing horizontally. It is generally understood that a directional tube with a directionality provides and/or allows for a shorter path. In addition, hydrophobic properties are shown between the nanotubes, and the banks provide better drainage and aeration characteristics. Therefore, having a grown nanotube has better performance than winding a nanotube such as a buck.
奈米級的碳奈米管高寬比的中空結構是由碳原子構成，而其管壁是一層層的碳層所組成，可以以一個半導體電子狀態或導通狀態的電子的六邊形環表示。增加電弧效率，可使得75%消耗的 碳源可以轉變為碳奈米管。若有一些過渡性的金屬，如鐵、鈷和鎳，夾雜在碳電弧中，則會有單層管壁的碳奈米管產生。The hollow structure of the nanometer carbon nanotube aspect ratio is composed of carbon atoms, and the tube wall is composed of a layer of carbon layer, which can be represented by a hexagonal ring of electrons in a semiconductor electronic state or a conducting state. . Increase arc efficiency, which can make 75% of the consumption The carbon source can be converted into a carbon nanotube. If some transitional metals, such as iron, cobalt and nickel, are entrained in a carbon arc, a single layer of carbon nanotubes will be produced.
電弧放電法為使用碳布或碳紙當電極材料，通入氦氣並將壓力維持在10至500托，一個直流供應電源接於兩個石墨碳電極，當碳電極靠得夠近開始放電，電流為40~100安培，這時在含有碳物質負電極沉積碳奈米管於碳紙或碳布上。雖然電弧放電法之碳奈米管其產生單壁和多壁碳奈米管納具有結構缺陷少的優點。然而，由於單壁碳奈米管在直流電弧放電裝置通過之同時亦從電弧放電裝置的陽極蒸發碳過渡金屬的一小部分。因此生產的碳奈米管不僅產率低，並且碳奈米管的密度顯示非常大差異變化。The arc discharge method uses carbon cloth or carbon paper as the electrode material, and the helium gas is introduced and the pressure is maintained at 10 to 500 Torr. A DC power supply is connected to the two graphite carbon electrodes, and when the carbon electrode is close enough to start discharging, The current is 40 to 100 amps, at which time a carbon nanotube is deposited on a carbon paper or carbon cloth at a negative electrode containing a carbon material. Although the carbon nanotubes of the arc discharge method produce single-walled and multi-walled carbon nanotubes, they have the advantage of having fewer structural defects. However, since the single-walled carbon nanotubes pass through the DC arc discharge device, a small portion of the metal transition metal is also evaporated from the anode of the arc discharge device. Therefore, the produced carbon nanotubes not only have a low yield, but also the density of the carbon nanotubes shows a very large difference.
另一方面，化學氣相成長氣體源為烴氣體，通常也混合氫氣或氨在一些過渡性金屬上熱裂解，其產物可能為碳奈米管、非晶質碳和實心的碳纖等。這些產物和溫度、成長時間、氣源、流量和觸媒金屬的種類、顆粒大小有關。化學氣相成長(chemical vapor deposition,CVD)之碳奈米管，直徑多數在100nm到數um外，增加電漿與使用過渡性的金屬化學氣相成長可比用電弧放電製程所得的碳奈米管來的大很多，因此，也更具量產特性。化學氣相成長雖然可以提供更具量產特性的碳奈米管，然而碳奈米管的純度、金屬觸媒清除等問題很難處理。On the other hand, the chemical vapor growth gas source is a hydrocarbon gas, and is usually also mixed with hydrogen or ammonia to be thermally cracked on some transition metals, and the products thereof may be carbon nanotubes, amorphous carbon, solid carbon fiber or the like. These products are related to temperature, growth time, gas source, flow rate, and type of catalyst metal, particle size. Chemical vapor deposition (CVD) carbon nanotubes, mostly in the range of 100 nm to several um, increasing the plasma and using a transition metal chemical vapor growth comparable to the carbon nanotubes obtained by the arc discharge process It's a lot bigger, so it's also more mass-produced. Although chemical vapor growth can provide carbon nanotubes with more mass production characteristics, the purity of carbon nanotubes and the removal of metal catalysts are difficult to handle.
氫和各種烴類氣體通過在低於一大氣壓的壓力下與電漿活化的氣體混合物的存在下，以微波或射頻放電控制混合物的壓力可形成單壁碳奈米管的地毯。然而在電漿化學氣相沉積情況下，由於在活化氣體存在下用襯底接近800℃高溫加熱造成觸媒顆粒燒結成更大顆粒而無法生產優質的小直徑的單壁碳奈米管。Hydrogen and various hydrocarbon gases can form a carpet of single-walled carbon nanotubes by controlling the pressure of the mixture by microwave or radio frequency discharge in the presence of a plasma-activated gas mixture at a pressure below atmospheric pressure. However, in the case of plasma chemical vapor deposition, high-quality small-diameter single-walled carbon nanotubes cannot be produced due to the sintering of the catalyst particles into larger particles with the substrate being heated at a high temperature of approximately 800 ° C in the presence of an activating gas.
另一種產生單壁碳奈米管為利用一氧化碳的歧化反應(disproportionation)形成的單壁碳奈米管。雖然，這種產生單壁碳奈米管在中等溫度過程中進行且使用廉價的原料。然而，因為氧化鋁負載的過渡金屬顆粒阻礙原料氣體擴散到催化劑顆粒表面周邊催化劑顆粒的限制，從而限制碳奈米管的進一步生長速率。Another type of single-walled carbon nanotube is a single-walled carbon nanotube formed by disproportionation of carbon monoxide. Although such a single-walled carbon nanotube is produced in a medium temperature process and uses inexpensive raw materials. However, because the alumina-supported transition metal particles hinder the diffusion of the feed gas to the catalyst particles around the surface of the catalyst particles, thereby limiting the further growth rate of the carbon nanotubes.
為解決上述技術問題，本創作公開了一種直接電弧生成之碳奈米管，包括：一襯底碳材，該襯底碳材為一導體多孔性碳材，至少一成核石墨種子，至少一碳奈米管前驅物，基於該至少一成核石墨種子生長於該襯底碳材之表面上，以及至少一碳奈米管，利用一電弧直接生長於該碳奈米前驅物上。In order to solve the above technical problem, the present invention discloses a carbon nanotube for direct arc generation, comprising: a substrate carbon material, the substrate carbon material is a conductive porous carbon material, at least one nucleated graphite seed, at least one The carbon nanotube precursor is grown on the surface of the substrate carbon material based on the at least one nucleated graphite seed, and at least one carbon nanotube is directly grown on the carbon nano precursor using an electric arc.
本創作另公開了一種直接電弧生成碳奈米管之裝置，包括一密封真空腔體，該密封真空腔體內充填碳元素之氦氣體，包括：一碳陰極與一碳陽極，一襯底碳材，置於該碳陰極與該碳陽極之間，一直流電弧間隙，置於該襯底碳材與該碳陽極之間，以及一直流電源，耦接該碳陰極與該碳陽極之間以產生一電弧，其中，該直流電弧間隙由該直流電源調整。The present invention further discloses a device for directly generating a carbon nanotube by arc, comprising a sealed vacuum chamber, wherein the sealed vacuum chamber is filled with a carbon element gas, comprising: a carbon cathode and a carbon anode, and a substrate carbon material. Between the carbon cathode and the carbon anode, a constant arc gap is placed between the substrate carbon material and the carbon anode, and a DC power source is coupled between the carbon cathode and the carbon anode to generate An arc, wherein the DC arc gap is adjusted by the DC power source.
本創作之碳奈米管藉由電弧處理先成長一層直徑小於10奈米石墨烯(graphene)或碳奈米管石墨種子於碳紙(carbon paper)或碳布(carbon cloth)表面上，再以小直徑碳奈米管當作種子直接化學氣相快速成長至微米級碳奈米管於碳紙上。因此，可提高生產的碳奈米管之產率，一致化碳奈米管的密度。如此一來，根據本創作之碳奈米管產生的碳奈米管可以在任何數量碳纖維紙或碳布的燃料電池的使用。The carbon nanotube of the present invention first grows a graphene or carbon nanotube graphite seed having a diameter of less than 10 nanometers on the surface of carbon paper or carbon cloth by arc treatment, and then The small-diameter carbon nanotubes are rapidly grown as seeds into the micro-scale carbon nanotubes on carbon paper. Therefore, the yield of the produced carbon nanotubes can be increased, and the density of the carbon nanotubes can be uniformized. In this way, the carbon nanotubes produced according to the carbon nanotubes of the present invention can be used in any number of carbon fiber paper or carbon cloth fuel cells.
100‧‧‧本創作一實施例之直接電弧生成碳奈米管裝置100‧‧‧ A direct arc-forming carbon nanotube device of an embodiment of the present invention
101‧‧‧密封真空腔體101‧‧‧ Sealed vacuum chamber
102‧‧‧襯底碳材102‧‧‧Substrate carbon material
103‧‧‧直流電弧間隙103‧‧‧DC arc gap
104‧‧‧碳陽極104‧‧‧Carbon anode
105‧‧‧碳陰極105‧‧‧Carbon cathode
106‧‧‧直流電源106‧‧‧DC power supply
200‧‧‧本創作一實施例之碳奈米管之構造示意圖200‧‧‧ Schematic diagram of the construction of a carbon nanotube according to an embodiment of the present invention
202‧‧‧至少一成核石墨種子202‧‧‧ at least one nucleated graphite seed
203‧‧‧至少一碳奈米管前驅物203‧‧‧ at least one carbon nanotube precursor
204‧‧‧至少一碳奈米管204‧‧‧ at least one carbon nanotube
圖1本創作一實施例之直接電弧生成碳奈米管裝置。Fig. 1 shows a direct arc generating carbon nanotube device according to an embodiment of the present invention.
圖2本創作一實施例之直接電弧生成之碳奈米管構造示意圖。Fig. 2 is a schematic view showing the construction of a carbon nanotube by direct arc generation according to an embodiment of the present invention.
以下將對本創作的實施例給出詳細的說明。雖然本創作將結合實施例進行闡述，但應理解這並非意指將本創作限定於這些實 施例。相反地，本創作意在涵蓋由後附申請專利範圍所界定的本創作精神和範圍內所定義的各種變化、修改和均等物。A detailed description will be given below of the embodiment of the present creation. Although this creation will be explained in conjunction with the examples, it should be understood that this does not mean that the creation is limited to these Example. On the contrary, the present invention is intended to cover various variations, modifications, and equivalents as defined by the spirit and scope of the invention as defined by the appended claims.
應理解圖示並未按照比例繪製，且僅描述其中部分結構，以及顯示行程這些結構之各層。It should be understood that the illustrations are not drawn to scale, and only a
此外，亦可結合其他的製程及步驟與此處所討論之製程與步驟，亦即，此處所顯示及描述之步驟之前、中間、及/或之後可有多種製程及步驟。重要的是，本創作之實施例可結合其他製程及步驟而實施之，並不會對其造成重大影響。一般而言，本創作之各種實施例可取代習知製程的某些部分，而不會對其週邊製程及步驟造成重大影響。In addition, other processes and steps may be combined with the processes and steps discussed herein, that is, there may be multiple processes and steps before, during, and/or after the steps shown and described herein. It is important that the embodiments of the present invention can be implemented in combination with other processes and steps without significant impact. In general, the various embodiments of the present invention may replace portions of the prior art process without significantly affecting its peripheral processes and steps.
圖1所示為根據本創作一實施例之直接電弧生成碳奈米管裝置100。包括一密封真空腔體101，該密封真空腔體101內包括一碳陰極105與一碳陽極104。一襯底碳材102，置於碳陰極105與碳陽極104之間。在一實施例中，密封真空腔體101中於壓力500托(torr)下充填碳元素之氦氣體(helium)。碳奈米管102與碳陽極104之間置有一直流電弧間隙103。直流電源106可配合直流電弧間隙103而調整。如此一來，碳陽極104之碳分子與氦氣體之碳元素經直流電弧以將一奈米石墨種子及一石墨烯成核直接於生成於襯底碳材102上。在一實施例中，該襯底碳材102為一導體多孔性碳材。在一實施例中，該導體多孔性碳材由一活性碳，一碳黑，一碳纖維布，一高定向熱解石墨，一石墨粉，一石墨布，一玻璃碳與一碳氣凝膠選出。在一實施例中，該導體多孔性碳材為一碳紙或一碳布。1 shows a direct arc generated carbon nanotube device 100 in accordance with an embodiment of the present invention. A sealed vacuum chamber 101 is included. The sealed vacuum chamber 101 includes a carbon cathode 105 and a carbon anode 104. A substrate carbon material 102 is placed between the carbon cathode 105 and the carbon anode 104. In one embodiment, the sealed vacuum chamber 101 is filled with a carbon element helium under a pressure of 500 torr. A DC arc gap 103 is placed between the carbon nanotube 102 and the carbon anode 104. The DC power source 106 can be adjusted in conjunction with the DC arc gap 103. As a result, the carbon molecules of the carbon anode 104 and the carbon of the helium gas are subjected to a direct current arc to nucleate a nanographite seed and a graphene directly onto the substrate carbon material 102. In one embodiment, the substrate carbon material 102 is a conductive porous carbon material. In one embodiment, the conductive porous carbon material is selected from an activated carbon, a carbon black, a carbon fiber cloth, a highly oriented pyrolytic graphite, a graphite powder, a graphite cloth, a glassy carbon and a carbon aerogel. . In one embodiment, the conductive porous carbon material is a carbon paper or a carbon cloth.
圖2所示為根據本創作一實施例之直接電弧生成碳奈米管200之構造示意圖。其中，直接電弧生成碳奈米管200包括如圖1所示之襯底碳材102。直接電弧生成碳奈米管200還包括至少一成核石墨種子202，以及至少一碳奈米管前驅物203。至少一碳奈米管前驅物203基於至少一成核石墨種子202生長於襯底碳材102之表面上，其中，至少一碳奈米管204利用一電弧直接生長於碳奈米前驅物202上。其中，至少一種多孔性碳質材料產生碳奈米管前驅物202。 在一實施例中，至少成核石墨種子202為一層直徑小於10奈米之一石墨烯或一碳奈米管種子。在另一個實施例中，成長該碳奈米管200所需之一奈米石墨種子及一石墨烯成核，固定在該襯底碳材上。2 is a schematic view showing the construction of a direct arc-generating carbon nanotube 200 according to an embodiment of the present invention. Among them, the direct arc-forming carbon nanotube 200 includes a substrate carbon material 102 as shown in FIG. The direct arc generating carbon nanotube 200 further includes at least one nucleated graphite seed 202, and at least one carbon nanotube precursor 203. At least one carbon nanotube precursor 203 is grown on the surface of the substrate carbon material 102 based on at least one nucleated graphite seed 202, wherein at least one carbon nanotube 204 is grown directly on the carbon nanoparticle precursor 202 using an arc. . Wherein at least one porous carbonaceous material produces a carbon nanotube precursor 202. In one embodiment, at least the nucleated graphite seed 202 is a layer of graphene or carbon nanotube seed having a diameter of less than 10 nanometers. In another embodiment, one of the nanographite seeds and a graphene nucleation required to grow the carbon nanotube 200 are affixed to the substrate carbon material.
直流電源106可配合直流電弧間隙204而調整。包括將至少一成核石墨種子202生長在該襯底102表面上，其中包括控制在該襯底碳材102上的一圖案；修改該至少一成核石墨種子202，以及生長該碳奈米管前驅物203。該至少一成核石墨種子202的直徑可通過化學處理以改性。在一個替代實施例中，該至少一成核石墨種子202的直徑是由溫度下熱處理，例如通過冷或熱改性。在一個替代實施例中，該至少一成核石墨種子202的直徑是由離子轟擊處理。在一實施例中，離子轟擊熱處理該至少一成核石墨種子202之直徑包括在900℃下之一保持爐中通過熱處理該至少一成核石墨種子202於一碳纖維紙(未示出)。The DC power source 106 can be adjusted in conjunction with the DC arc gap 204. Including growing at least one nucleated graphite seed 202 on the surface of the substrate 102, including controlling a pattern on the substrate carbon material 102; modifying the at least one nucleated graphite seed 202, and growing the carbon nanotube Precursor 203. The diameter of the at least one nucleated graphite seed 202 can be modified by chemical treatment. In an alternate embodiment, the diameter of the at least one nucleated graphite seed 202 is heat treated by temperature, such as by cold or heat. In an alternate embodiment, the diameter of the at least one nucleated graphite seed 202 is treated by ion bombardment. In one embodiment, ion bombardment heat treating the diameter of the at least one nucleated graphite seed 202 comprises heat treating the at least one nucleated graphite seed 202 to a carbon fiber paper (not shown) in a holding furnace at 900 °C.
如此一來，根據本創作之生產直接電弧生成碳奈米管之裝置100所生產碳奈米管204之良率可提高外，並可一致化碳奈米管204的密度。As a result, the yield of the carbon nanotubes 204 produced by the apparatus 100 for producing direct carbon arc tubes according to the present invention can be improved, and the density of the carbon nanotubes 204 can be uniformized.
上文具體實施方式和附圖僅為本創作之常用實施例。顯然，在不脫離權利要求書所界定的本創作精神和發明範圍的前提下可以有各種增補、修改和替換。本領域技術人員應該理解，本創作在實際應用中可根據具體的環境和工作要求在不背離發明準則的前提下在形式、結構、佈局、比例、材料、元素、元件及其它方面有所變化。因此，在此披露之實施例僅用於說明而非限制，本創作之範圍由後附權利要求及其合法等同物界定，而不限於此前之描述。The above detailed description and drawings are merely typical embodiments of the present invention. Obviously, there may be various additions, modifications and substitutions without departing from the spirit and scope of the invention as defined by the appended claims. It should be understood by those skilled in the art that the present invention may be changed in form, structure, layout, ratio, material, element, component, and other aspects in accordance with the specific environmental and working requirements without departing from the invention. The presently disclosed embodiments are to be considered in all respects as illustrative and not restrict
100‧‧‧本創作一實施例之直接電弧生成碳奈米管裝置100‧‧‧ A direct arc-forming carbon nanotube device of an embodiment of the present invention
101‧‧‧密封真空腔體101‧‧‧ Sealed vacuum chamber
102‧‧‧襯底碳材102‧‧‧Substrate carbon material
103‧‧‧直流電弧間隙103‧‧‧DC arc gap
104‧‧‧碳陽極104‧‧‧Carbon anode
105‧‧‧碳陰極105‧‧‧Carbon cathode
106‧‧‧直流電源106‧‧‧DC power supply
Claims (19)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103218283U TWM504091U (en) | 2014-10-15 | 2014-10-15 | Device for direct arc formation of carbon nanotube and carbon nanotube thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103218283U TWM504091U (en) | 2014-10-15 | 2014-10-15 | Device for direct arc formation of carbon nanotube and carbon nanotube thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM504091U true TWM504091U (en) | 2015-07-01 |
Family
ID=54151971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103218283U TWM504091U (en) | 2014-10-15 | 2014-10-15 | Device for direct arc formation of carbon nanotube and carbon nanotube thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM504091U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112798884A (en) * | 2020-12-15 | 2021-05-14 | 珠海格力电器股份有限公司 | Convenient arc burning device, control method, arc generator and application |
-
2014
- 2014-10-15 TW TW103218283U patent/TWM504091U/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112798884A (en) * | 2020-12-15 | 2021-05-14 | 珠海格力电器股份有限公司 | Convenient arc burning device, control method, arc generator and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7824649B2 (en) | Apparatus and method for synthesizing a single-wall carbon nanotube array | |
| Nomura et al. | Microwave plasma in hydrocarbon liquids | |
| Lim et al. | Plasma-assisted synthesis of carbon nanotubes | |
| US20060185595A1 (en) | Apparatus and process for carbon nanotube growth | |
| Wang et al. | Nucleation and growth of well-aligned, uniform-sized carbon nanotubes by microwave plasma chemical vapor depositon | |
| JP2009196873A (en) | Method and apparatus for manufacturing carbon nanotube | |
| KR100801192B1 (en) | Carbonnitride nanotubes with nano-sized pores on their stems, their preparation method and control method of size and quantity of pore thereof | |
| KR101313753B1 (en) | Method for growth of carbon nanoflakes and carbon nanoflakes structure | |
| Chen et al. | ZnO nanowire arrays grown on Al: ZnO buffer layers and their enhanced electron field emission | |
| Zhang et al. | The synthesis of conical carbon | |
| JP5768232B2 (en) | Method for producing vertically aligned carbon nanotubes | |
| TWM504091U (en) | Device for direct arc formation of carbon nanotube and carbon nanotube thereof | |
| JP2005108721A (en) | Electron emission electrode and its manufacturing method | |
| Yardimci et al. | Synthesis methods of carbon nanotubes | |
| CN104599856B (en) | A kind of single-walled carbon nanotube orthogonal array carbon nano-onions composite material and preparation method thereof and its application in ultracapacitor | |
| JP3711384B2 (en) | Carbon nanotube aggregate array film and manufacturing method thereof | |
| Chuen | Effects of the Growth Time and the Thickness of the Buffer Layer on the Quality of the Carbon Nanotubes | |
| Liao et al. | High-voltage electric-field-induced growth of aligned “cow-nipple-like” submicro-nano carbon isomeric structure via chemical vapor deposition | |
| KR100707199B1 (en) | Low temperature growth method of single-walled carbon nanotubes by H2O plasma | |
| Kim et al. | New DC arc discharge synthesis method for carbon nanotubes using xylene ferrocene as floating catalyst | |
| JP6037287B2 (en) | Method for producing carbon nanotube | |
| Ding et al. | Recent research progress of carbon nanotube arrays prepared by plasma enhanced chemical vapor deposition method | |
| KR20050097089A (en) | Method for forming of powder of carbon nano tube | |
| KR100503123B1 (en) | Method for the formation of open structure carbon nanotubes field emitter by plasma chemical vapor deposition | |
| Park et al. | Growth of carbon nanotubes using nanocrystalline carbon catalyst |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4K | Annulment or lapse of a utility model due to non-payment of fees |