TWM406804U - Structure of termination trench region for Schottky diode - Google Patents

Structure of termination trench region for Schottky diode Download PDF

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Publication number
TWM406804U
TWM406804U TW100202221U TW100202221U TWM406804U TW M406804 U TWM406804 U TW M406804U TW 100202221 U TW100202221 U TW 100202221U TW 100202221 U TW100202221 U TW 100202221U TW M406804 U TWM406804 U TW M406804U
Authority
TW
Taiwan
Prior art keywords
trench
schottky diode
layer
termination region
region
Prior art date
Application number
TW100202221U
Other languages
English (en)
Chinese (zh)
Inventor
yong-zhong Li
Zong-Ming Pan
Original Assignee
Taiwan Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Co Ltd filed Critical Taiwan Semiconductor Co Ltd
Priority to TW100202221U priority Critical patent/TWM406804U/zh
Publication of TWM406804U publication Critical patent/TWM406804U/zh
Priority to CN2011205575261U priority patent/CN202434522U/zh
Priority to JP2012000013U priority patent/JP3174355U/ja
Priority to KR2020120000500U priority patent/KR200470298Y1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
TW100202221U 2011-01-31 2011-01-31 Structure of termination trench region for Schottky diode TWM406804U (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW100202221U TWM406804U (en) 2011-01-31 2011-01-31 Structure of termination trench region for Schottky diode
CN2011205575261U CN202434522U (zh) 2011-01-31 2011-12-28 肖特基二极管的终止区沟槽结构
JP2012000013U JP3174355U (ja) 2011-01-31 2012-01-05 ショットキーダイオードのターミナル領域トレンチ構造
KR2020120000500U KR200470298Y1 (ko) 2011-01-31 2012-01-19 쇼트키 다이오드의 종단 영역 트렌치 구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100202221U TWM406804U (en) 2011-01-31 2011-01-31 Structure of termination trench region for Schottky diode

Publications (1)

Publication Number Publication Date
TWM406804U true TWM406804U (en) 2011-07-01

Family

ID=45080592

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100202221U TWM406804U (en) 2011-01-31 2011-01-31 Structure of termination trench region for Schottky diode

Country Status (4)

Country Link
JP (1) JP3174355U (ko)
KR (1) KR200470298Y1 (ko)
CN (1) CN202434522U (ko)
TW (1) TWM406804U (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101438620B1 (ko) 2012-12-27 2014-09-05 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
KR101886105B1 (ko) * 2016-12-08 2018-08-07 현대자동차 주식회사 반도체 소자
CN109390232A (zh) * 2017-08-08 2019-02-26 天津环鑫科技发展有限公司 沟槽肖特基终端区沟槽刻蚀方法及沟槽肖特基制备方法
JP7045008B2 (ja) * 2017-10-26 2022-03-31 Tdk株式会社 ショットキーバリアダイオード
KR102646903B1 (ko) 2018-09-04 2024-03-12 삼성전자주식회사 이미지 센서
CN110212023B (zh) * 2019-05-29 2020-10-09 西安电子科技大学 一种能够减小反向漏电流的结型势垒肖特基二极管
CN113066871A (zh) * 2021-03-25 2021-07-02 电子科技大学 具有变k介质槽复合终端的氧化镓结势垒肖特基二极管

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740951B2 (en) * 2001-05-22 2004-05-25 General Semiconductor, Inc. Two-mask trench schottky diode
KR100483074B1 (ko) * 2002-08-28 2005-04-14 정상구 쇼트키 다이오드 및 그 제조방법

Also Published As

Publication number Publication date
KR20120005712U (ko) 2012-08-08
KR200470298Y1 (ko) 2013-12-06
JP3174355U (ja) 2012-03-15
CN202434522U (zh) 2012-09-12

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