TWI827492B - Transfer method and photomask - Google Patents

Transfer method and photomask Download PDF

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TWI827492B
TWI827492B TW112111310A TW112111310A TWI827492B TW I827492 B TWI827492 B TW I827492B TW 112111310 A TW112111310 A TW 112111310A TW 112111310 A TW112111310 A TW 112111310A TW I827492 B TWI827492 B TW I827492B
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substrate
axis
laser
donor
stage
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TW202329505A (en
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山岡裕
仲田悟基
小澤周作
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日商信越化學工業股份有限公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
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Abstract

本發明提供轉移方法及光罩。在保持高轉移位置精度的同時實現轉移裝置的受體基板的大型化、精細化和縮短節拍時間。在以保持放置有轉移對象物的供體基板和/或光束整形光學系統以及縮小投影光學系統的狀態移動的各台組、以及保持作為轉移目的物的受體基板的台組構建在分開的平臺上而構成的機構中，使伴隨各基板相對於鐳射的相對掃描而產生的振動和承擔該掃描的台的同步位置精度的異常最小化。The invention provides a transfer method and a photomask. While maintaining high transfer position accuracy, the acceptor substrate of the transfer device can be enlarged and refined, and the cycle time can be shortened. Each stage group that moves while holding the donor substrate and/or the beam shaping optical system and the reduction projection optical system on which the transfer target object is placed, and the stage group that holds the acceptor substrate that is the transfer target object, are constructed on separate platforms. The mechanism configured as above minimizes the vibration caused by the relative scanning of each substrate with respect to the laser and the abnormality in the synchronization position accuracy of the stage responsible for the scanning.

Description

轉移方法及光罩Transfer method and photomask

本發明涉及一種轉移方法及光罩，其使用鐳射照射而將位於供體基板上的對象物高精度地轉移到受體基板上（LIFT：Laser Induced Forward Transfer鐳射誘導向前轉移）。The present invention relates to a transfer method and a photomask, which use laser irradiation to transfer an object located on a donor substrate to a acceptor substrate with high precision (LIFT: Laser Induced Forward Transfer).

以往有一種技術，其向供體基板上的有機EL（電致發光）層照射鐳射並將其轉移到對置的電路基板上。作為該技術，在專利文獻1中公開了一種技術：將一個鐳射轉換為具有矩形形狀的強度分佈均勻的多個矩形鐳射，將它們串列且等間隔配置，以隔開一定時間以上且重疊規定次數的方式向供體基板的規定的區域照射多個矩形鐳射，使該鐳射被位於供體基板和有機EL層間的金屬箔吸收而產生彈性波，將由此剝離的有機EL層轉移到對置的電路基板上。There has been a technology that irradiates an organic EL (electroluminescence) layer on a donor substrate with laser and transfers it to an opposing circuit substrate. As this technology, Patent Document 1 discloses a technology in which one laser is converted into a plurality of rectangular lasers having a rectangular shape with uniform intensity distribution, and they are arranged in series at equal intervals so as to be separated by a certain period of time or more and overlap by a prescribed amount. A plurality of rectangular lasers are irradiated to a predetermined area of the donor substrate several times, so that the laser is absorbed by the metal foil located between the donor substrate and the organic EL layer to generate elastic waves, and the organic EL layer peeled off thereby is transferred to the opposite on the circuit board.

在該技術中使用如下的結構：在供體基板和電路基板之間夾持將80～100[μm]作為適當值的間隔件，把將供體基板和電路基板的間隔保持為固定的狀態並一體化的構件放置在一個臺上，並使其相對於鐳射進行掃描。但是，在該情況下，除了另外需要使對置的供體基板和電路基板一體化的工序以外，還需要與電路基板尺寸相同的供體基板，並且伴隨電路基板的大型化的需要，需要增加製造成本和裝置的大型化。This technology uses a structure in which a spacer with an appropriate value of 80 to 100 [μm] is sandwiched between a donor substrate and a circuit substrate, and the distance between the donor substrate and the circuit substrate is maintained in a fixed state. The integrated component is placed on a stage and scanned relative to the laser. However, in this case, in addition to a separate step of integrating the opposing donor substrate and the circuit substrate, a donor substrate having the same size as the circuit substrate is also required, and as the circuit substrate becomes larger, additional steps are required. Manufacturing costs and device size increase.

同樣，作為將供體基板上的有機EL層向對置的電路基板轉移的技術，在專利文獻2中公開了如下的技術：將光吸收層設置在供體基板和有機EL層之間，使該光吸收層吸收照射的鐳射而產生衝擊波，將供體基板上的有機EL層向設置有10～100[μm]的間隔並對置的電路基板轉移。但是，專利文獻2未公開鐳射的掃描方法和實現其的台結構，而且也未公開轉移裝置。因此，專利文獻2不能作為用於維持並提高能夠與電路基板的大型化對應的轉移位置精度的技術來進行參照。Similarly, as a technology for transferring an organic EL layer on a donor substrate to an opposing circuit substrate, Patent Document 2 discloses a technology in which a light-absorbing layer is provided between the donor substrate and the organic EL layer. This light-absorbing layer absorbs the irradiated laser and generates a shock wave, thereby transferring the organic EL layer on the donor substrate to the opposing circuit substrate with an interval of 10 to 100 [μm]. However, Patent Document 2 does not disclose a laser scanning method or a stage structure that implements it, nor does it disclose a transfer device. Therefore, Patent Document 2 cannot be referred to as a technology for maintaining and improving transfer position accuracy that can cope with the increase in size of circuit boards.

此外，在專利文獻3中公開了一種在用於半導體器件製造的曝光裝置中與步進掃描法相關的技術。其基本考慮方式如下：邊跳過中途的幾個照射區域邊間歇地對沿著晶片台的掃描曝光方向的一列照射區域進行曝光，並且在其中途不使晶片台停止。即，專利文獻3公開了一種曝光裝置，其包括：中間光罩台，保持中間光罩；晶片台，保持晶片；以及投影光學系統，將中間光罩的圖案向晶片投影，邊使中間光罩台和晶片台一起相對於投影光學系統掃描邊進行曝光，將中間光罩的圖案依次投影到晶片的多個照射區域，其中，邊不使所述晶片台靜止地使其掃描移動邊對沿掃描方向排列的晶片上的多個照射區域間歇地進行曝光。由此，在晶片的大型化且處理速度的高速化的要求下，與反復進行晶片台的加減速的步進重複（step and repeat）方式相比，能夠減輕伴隨台的掃描產生的振動和搖晃對曝光精度的影響。Furthermore, Patent Document 3 discloses a technology related to the step scanning method in an exposure apparatus used for semiconductor device manufacturing. The basic thinking method is as follows: while skipping several irradiation areas in the middle, a row of irradiation areas along the scanning exposure direction of the wafer stage is intermittently exposed, and the wafer stage is not stopped in the middle. That is, Patent Document 3 discloses an exposure device that includes an intermediate mask stage that holds an intermediate mask, a wafer stage that holds a wafer, and a projection optical system that projects a pattern of the intermediate mask onto the wafer while causing the intermediate mask to The stage and the wafer stage are exposed together while scanning with respect to the projection optical system, and the patterns of the intermediate mask are sequentially projected onto a plurality of irradiation areas of the wafer, wherein the wafer stage is scanned edge-to-edge while moving the wafer stage without being stationary. Multiple irradiation areas on a directionally aligned wafer are exposed intermittently. As a result, in response to the demand for larger wafers and faster processing speeds, it is possible to reduce vibration and shaking caused by scanning the wafer stage compared to the step and repeat method in which the wafer stage is repeatedly accelerated and decelerated. Effect on exposure accuracy.

但是，上述專利文獻3中公開的技術是將縮小投影曝光作為基礎的半導體曝光裝置的技術，其技術領域與本發明的轉移技術不同。即，曝光裝置的中間光罩台和晶片台的結構和掃描技術與本發明的台結構和掃描技術完全不同，本發明的台結構和掃描技術用於將本發明的光罩圖案以高位置精度的方式縮小投影到供體基板上的對象物，進而以相同的高位置精度將該對象物轉移到受體基板上。因此，作為本發明的具體的台結構及其掃描技術不能參照上述專利文獻3中公開的技術。However, the technology disclosed in the above-mentioned Patent Document 3 is a technology of a semiconductor exposure device based on reduction projection exposure, and its technical field is different from the transfer technology of the present invention. That is, the structure and scanning technology of the intermediate mask stage and the wafer stage of the exposure device are completely different from the stage structure and scanning technology of the present invention, which are used to realize the mask pattern of the present invention with high positional accuracy. method to reduce the object projected onto the donor substrate, and then transfer the object to the acceptor substrate with the same high positional accuracy. Therefore, the technology disclosed in the above-mentioned Patent Document 3 cannot be referred to as the specific stage structure and its scanning technology of the present invention.

現有技術文獻existing technical documents

專利文獻1：日本專利公開公報特開2014-67671號Patent document 1: Japanese Patent Publication No. 2014-67671

專利文獻2：日本專利公開公報特開2010-40380號Patent document 2: Japanese Patent Publication No. 2010-40380

專利文獻3：日本專利公開公報特開2000-21702號Patent document 3: Japanese Patent Publication No. 2000-21702

通過將保持供體基板的供體台和放置在該供體臺上的保持光學系統的光學台的兩個台與保持受體基板的受體台作為獨立的機構的構成、以及不將光學台直接放置於供體台而作為分別獨立設置在剛性高的平臺上的構成，使伴隨各台的掃描產生的振動和各種錯誤對台間的同步位置精度造成的影響最小化。其結果，本發明的目的在於提供一種轉移裝置，其在維持轉移位置精度的同時有助於受體基板的大型化、精細化和縮短節拍時間。By configuring the donor stage holding the donor substrate, the two stages of the optical stage holding the optical system placed on the donor stage, and the acceptor stage holding the acceptor substrate as independent mechanisms, and not using the optical stage The structure of placing them directly on the donor stage and installing them independently on highly rigid platforms minimizes the impact of vibrations and various errors caused by scanning of each stage on the synchronization position accuracy between stages. As a result, an object of the present invention is to provide a transfer device that contributes to the enlargement and refinement of the receptor substrate and shortens the cycle time while maintaining the accuracy of the transfer position.

第一發明是一種轉移裝置，其通過從供體基板的背面向位於移動的所述供體基板的表面上的對象物照射脈衝鐳射，選擇性地將所述對象物剝離，並將所述對象物轉移到邊與所述供體基板相對邊移動的受體基板上，所述轉移裝置包括：脈衝振盪的鐳射裝置；望遠鏡，使從所述鐳射裝置射出的脈衝鐳射成為平行光；整形光學系統，將通過了所述望遠鏡的脈衝鐳射的空間強度分佈整形為均勻的分佈；光罩（mask），使由所述整形光學系統整形後的脈衝鐳射以規定的圖案通過；場鏡，位於所述整形光學系統和所述光罩之間；投影透鏡，將通過了所述光罩的圖案的鐳射縮小投影在所述供體基板的表面；光罩台，保持所述場鏡和所述光罩；光學台，保持所述整形光學系統、所述光罩台和所述投影透鏡；供體台，以使所述供體基板的背面成為鐳射的射入側的朝向保持所述供體基板；受體台，保持所述受體基板；以及可程式設計的多軸控制裝置，具有所述脈衝鐳射振盪用的觸發輸出功能和台控制功能，所述受體台具有將水平面作為XY平面時的Y軸、鉛垂方向的Z軸和XY平面內的θ軸，所述供體台具有X軸、Y軸和θ軸，所述投影透鏡與所述投影透鏡用的Z軸台一起保持在所述光學臺上，所述望遠鏡、所述整形光學系統、所述場鏡、所述光罩和所述投影透鏡構成縮小投影光學系統，所述縮小投影光學系統將所述光罩的圖案縮小投影在所述供體基板的表面，所述供體台的X軸設置在平臺1（第一平臺）上，所述受體台的Y軸設置在與所述平臺1不同的平臺2（第二平臺）上，所述供體台的Y軸懸掛設置於所述供體台的X軸。The first invention is a transfer device that irradiates a pulse laser from the back surface of a donor substrate to an object located on the surface of the moving donor substrate to selectively peel off the object and transfer the object The object is transferred to the acceptor substrate that moves opposite to the donor substrate. The transfer device includes: a pulsed oscillating laser device; a telescope that converts the pulsed laser emitted from the laser device into parallel light; and a shaping optical system. , shaping the spatial intensity distribution of the pulse laser that has passed the telescope into a uniform distribution; a mask, allowing the pulse laser shaped by the shaping optical system to pass in a prescribed pattern; a field lens, located on the Between the shaping optical system and the photomask; a projection lens, which reduces the laser beam passing through the photomask pattern and projects it on the surface of the donor substrate; the photomask stage, which holds the field lens and the photomask ; An optical table that holds the shaping optical system, the mask table, and the projection lens; a donor table that holds the donor substrate in an orientation such that the back surface of the donor substrate becomes the incident side of the laser; a receptor stage that holds the receptor substrate; and a programmable multi-axis control device that has a trigger output function and a stage control function for the pulsed laser oscillation, and the receptor stage has a horizontal plane as an XY plane. The donor stage has a Y axis, a Z axis in the vertical direction, and a θ axis in the XY plane. The donor stage has an On the optical table, the telescope, the shaping optical system, the field lens, the light mask and the projection lens constitute a reduction projection optical system, and the reduction projection optical system reduces the pattern of the light mask and projects it. On the surface of the donor substrate, the X-axis of the donor stage is set on platform 1 (first platform), and the Y-axis of the acceptor stage is set on platform 2 (second platform) which is different from platform 1. platform), the Y-axis of the donor table is suspended from the X-axis of the donor table.

在此，「移動的」基板包括脈衝鐳射（圖1A中表示為「LS」。但是，圖1A雖然表示第二發明的主要結構部，但是由於包含與第一發明的結構共通的結構部分，所以進行參照。以下相同）的照射時也不停止而移動的情況和脈衝鐳射的照射時停止並反復進行移動和停止的情況，根據本發明的轉移裝置進行的轉移工序和所要求的節拍時間等選擇所述的情況。此外，也包括供體基板（D）反復進行移動和停止、受體基板（R）不停止的結構和與其相反的情況的結構。在來自供體基板的對象物的剝離中僅使用一次照射時且要求高節拍時間的情況下，適合選擇供體基板和受體基板以相同或不同的速度不停止地移動的結構。另一方面，在想要使對象物層疊一定厚度的情況下等，有時選擇使供體基板不停止地移動且受體基板在一定照射數期間停止的結構。Here, the "moving" substrate includes a pulsed laser (shown as "LS" in Figure 1A. However, although Figure 1A shows the main structural parts of the second invention, it contains common structural parts with the structure of the first invention. For reference (the same below), the case of moving without stopping during irradiation and the case of stopping and repeating movement and stopping during irradiation of pulse laser are selected based on the transfer process performed by the transfer device of the present invention and the required tact time, etc. the situation described. In addition, it also includes a structure in which the donor substrate (D) repeatedly moves and stops, but the acceptor substrate (R) does not stop, and a structure in which the opposite occurs. When only one irradiation is used for peeling off the object from the donor substrate and a high tact time is required, it is appropriate to select a structure in which the donor substrate and the acceptor substrate move at the same or different speeds without stopping. On the other hand, when the object is to be laminated to a certain thickness, a structure may be selected in which the donor substrate moves without stopping and the acceptor substrate stops during a certain number of irradiations.

此外，「對象物」沒有特別的限定，是設置在供體基板上或隔著光吸收層（圖1A中省略圖示）在供體基板上設置成一片的轉移對象物，包括以所述專利文獻中記載的有機EL層為代表的薄膜和以微小的單元狀且規則地配置有多個的對象物，但是並不限定於這些對象物。另外，轉移的機理包括下述情況：被照射了鐳射的所述光吸收層產生衝擊波，由此對象物從供體基板剝離並朝向受體基板轉移；不具備光吸收層而通過直接向對象物照射的鐳射而剝離；但是並不限定於這些情況。In addition, the "object" is not particularly limited, and is a transfer object that is provided on the donor substrate or is provided in one piece on the donor substrate via a light-absorbing layer (not shown in FIG. 1A ), including those described in the above-mentioned patent. Thin films represented by organic EL layers described in literature and objects in which a plurality of fine units are regularly arranged are not limited to these objects. In addition, the transfer mechanism includes the following: the light-absorbing layer irradiated with laser generates a shock wave, whereby the object is peeled off from the donor substrate and transferred toward the recipient substrate; or the light-absorbing layer is not provided and the object is transferred directly to the object. It is peeled off by laser irradiation; however, it is not limited to these cases.

供體基板的材質只要對所述鐳射的波長具有透過特性即可，理想的是基板的大型化所造成的彎曲量小的材質。另外，在該彎曲量大到不滿足供體基板與受體基板間的間隙的均勻性的程度的情況下，供體台（Yd、θd）的供體基板的保持方法例如有如下的方法：通過在供體基板的中央附近設置吸附區域等來進行機械矯正；除此以外使用後述的高度感測器的組合形成的間隙感測器進行修正。The material of the donor substrate only needs to have transmittance properties for the wavelength of the laser. Ideally, it should be a material that has a small amount of bending caused by enlargement of the substrate. In addition, when the amount of bending is so large that the uniformity of the gap between the donor substrate and the acceptor substrate is not satisfied, the method of holding the donor substrate on the donor stage (Yd, θd) is, for example, the following method: Mechanical correction is performed by providing an adsorption area or the like near the center of the donor substrate. In addition, correction is performed using a gap sensor formed by a combination of height sensors described later.

在本發明中，為了將位於供體基板的邊緣附近的對象物向受體基板轉移，供體台的可動範圍包含供體基板應移動的XY平面區域，並且是指依存於受體基板的大小的範圍。作為一個例子，在供體基板的XY平面內的尺寸為200×200[mm]、同樣的受體基板為400×400[mm]的情況下，供體台（Xd、Yd）應移動的規定範圍大體為800×800[mm]。圖4表示該情況。另外，在為了取下供體基板而需要進一步移動的情況下，也包含該區域。In the present invention, in order to transfer the object located near the edge of the donor substrate to the acceptor substrate, the movable range of the donor stage includes the XY plane area where the donor substrate should move, and is dependent on the size of the acceptor substrate. range. As an example, when the size of the donor substrate in the XY plane is 200 × 200 [mm] and the same acceptor substrate is 400 × 400 [mm], the regulations on how the donor stage (Xd, Yd) should move The range is roughly 800×800[mm]. Figure 4 shows this situation. In addition, this area is also included when further movement is required to remove the donor substrate.

此外，「平臺」的材質沒有特別的限定，但是必須是具有極高剛性的材質。為了使平台1（G1）具有剛性，希望俯視時為「コ」形或「□」形的形狀。此外，在圖1A中，將平臺2圖示為一個的形狀，但是具體地說，也可以是下述構成：將平臺作為沿Y軸方向設置兩個的平臺，在其中間放置線性刻度和直線電機。另外，平臺1和平臺2可以是固定在同一基礎平臺（G）上的結構。此外，G1可以由平臺11（G11）和平臺12（G12）的組合構成。In addition, the material of the "platform" is not particularly limited, but it must be a material with extremely high rigidity. In order to provide rigidity to the platform 1 (G1), it is desired to have a "U" or "□" shape when viewed from above. In addition, in FIG. 1A , the stage 2 is shown as a single stage, but specifically, it may be configured as follows: two stages are provided along the Y-axis direction, and a linear scale and a straight line are placed in the middle. motor. In addition, Platform 1 and Platform 2 may be structures fixed on the same base platform (G). Furthermore, G1 may be composed of a combination of platform 11 (G11) and platform 12 (G12).

此外，任何平臺的材質都需要使用鋼鐵、石材或陶瓷材料等剛性高的構件。例如該石材可以使用以花崗岩（granite）為代表的石材，但是並不限定於此。此外，全部平臺無需由相同的材質構成。In addition, the material of any platform requires the use of highly rigid components such as steel, stone or ceramic materials. For example, a stone represented by granite can be used as the stone, but it is not limited thereto. Additionally, all platforms do not need to be constructed from the same material.

在後述的實施例中，對各台的移動進行詳細說明，但是大體進行以下的動作。首先，供體台的X軸（Xd）在懸掛設置有供體台的Y軸（Yd）的狀態下設置在G1上，沿X軸方向移動。此外，該移動改變供體基板和受體基板間的沿X軸的相對位置。圖1B表示移動的情況。另外，在哪個圖中都未圖示台的可動工作臺和直線導軌等的詳細結構。In the embodiments described below, the movement of each station will be described in detail, but the following operations are generally performed. First, the X-axis (Xd) of the donor table is set on G1 in a state where the Y-axis (Yd) of the donor table is suspended, and moves in the X-axis direction. Furthermore, this movement changes the relative position along the X-axis between the donor and acceptor substrates. Figure 1B shows the movement. In addition, detailed structures such as the movable table and the linear guide rail of the table are not shown in any figure.

光學台（Xo）向平臺等設置的設置方法沒有限定，可以選擇各種機構，例如放置在Xd上的狀態、與設置有Xd的平臺設置在同一平臺上的狀態、或放置在與Xd不同的平臺上的狀態等。Xo與Xd同時行進並在X軸方向上移動，整形光學系統（H）、場鏡（F）、光罩（M）和投影透鏡（Pl）的各相對位置不變化，使它們一體移動。另一方面，沿著X軸的Xo的移動會改變供體基板與投影透鏡間的相對位置關係。圖1C表示該移動的情況。There is no limit to the method of setting the optical table (Xo) to a table, etc., and various mechanisms can be selected, such as a state where it is placed on Xd, a state where it is placed on the same stage as the stage on which Xd is installed, or a state where it is placed on a stage different from Xd. status etc. Xo and On the other hand, the movement of Xo along the X-axis will change the relative positional relationship between the donor substrate and the projection lens. Figure 1C shows this movement.

另外，在不需要改變供體基板與投影透鏡的X軸方向的相對位置的情況下，可以是始終與供體台的X軸一起移動的結構，即省略光學台，均質器（homogenizer）、場鏡、光罩和投影透鏡全部設置在供體台的X軸上或固定在另外的平臺上的結構。In addition, when there is no need to change the relative position of the donor substrate and the projection lens in the X-axis direction, it can be a structure that always moves together with the X-axis of the donor stage, that is, the optical stage, homogenizer, and field can be omitted. The mirror, mask and projection lens are all arranged on the X-axis of the donor stage or fixed on another platform.

光罩保持在光罩臺上，該光罩台至少具有與場鏡一起沿X軸方向移動的W軸，此外優選的是，還可以具有：Y軸方向的U軸、沿Z軸方向移動的V軸、作為YZ平面內的轉動軸的R軸、調整相對於V軸的傾斜度的TV軸和調整相對於U軸的傾斜度的TU軸。此外，為了抑制向光罩照射鐳射所產生的熱量的注入，可以在該光罩的眼前一側設置孔眼光罩，該孔眼光罩配置有比光罩圖案大一圈的圖案，與所述光罩配合而成為雙光罩結構。The mask is held on a mask stage, which has at least a W axis that moves in the X-axis direction together with the field lens. In addition, preferably, it may also have: a U-axis in the Y-axis direction, and a U-axis that moves in the Z-axis direction. The V axis, the R axis which is the rotation axis in the YZ plane, the TV axis which adjusts the inclination with respect to the V axis, and the TU axis which adjusts the inclination with respect to the U axis. In addition, in order to suppress the injection of heat generated by irradiating the laser with the mask, an aperture mask may be provided on the front side of the mask, and the aperture mask may be configured with a pattern that is one circle larger than the mask pattern and is in line with the light mask. The masks are matched to form a double mask structure.

供體台的Y軸（Yd）和受體台的Y軸（Yr）以將轉移工序中的供體基板和受體基板的間隙保持為固定且維持極高的平行度的狀態，以相同或不同的速度移動。此外，按照各台組的移動方法和支承它們的平臺等的上述結構，通過將受體基板的移動機構限定於Y軸且與供體基板的移動機構分離，能夠抑制因彼此的基板的移動區域的干擾和振動造成的相互影響，能夠應對受體基板的尺寸的大型化和精細化。The Y-axis (Yd) of the donor stage and the Y-axis (Yr) of the acceptor stage are arranged in the same or Move at different speeds. In addition, according to the above-mentioned structure of the moving method of each stage group and the platform that supports them, by limiting the moving mechanism of the receptor substrate to the Y-axis and being separated from the moving mechanism of the donor substrate, it is possible to suppress the movement areas of each other's substrates. The interaction caused by interference and vibration can cope with the enlargement and refinement of the size of the receptor substrate.

第二發明是在第一發明的基礎上，所述供體台的X軸放置在所述平臺1上，所述光學台放置在所述供體台的X軸上。The second invention is based on the first invention. The X-axis of the donor table is placed on the platform 1, and the optical table is placed on the X-axis of the donor table.

圖1A表示所述第二發明的轉移裝置的主要結構部分（側視圖）。圖1B表示Xd放置上Xo並從圖1A的狀態移動了的情況（側視圖）。圖1C表示Xo從圖1B的狀態在Xd上移動了的情況（側視圖）。圖1D表示圖1C的俯視。FIG. 1A shows the main structural parts (side view) of the transfer device of the second invention. FIG. 1B shows a state where Xd is placed on Xo and moved from the state of FIG. 1A (side view). FIG. 1C shows a state where Xo has moved on Xd from the state of FIG. 1B (side view). Figure 1D shows a top view of Figure 1C.

第三發明是在第一發明的基礎上，所述光學台放置在所述平臺1上，並且所述供體台的X軸懸掛設置於所述平臺1。The third invention is based on the first invention. The optical table is placed on the platform 1 , and the X-axis of the donor table is suspended from the platform 1 .

圖2A表示所述第三發明的轉移裝置的主要結構部分（側視圖）。圖2B表示Xd和Xo從圖2A的狀態在G1上（Xd懸掛設置於G1）移動了相同距離的情況（側視圖）。圖2C表示僅Xo從圖2B的狀態在G1上移動了的情況（側視圖）。FIG. 2A shows the main structural part (side view) of the transfer device of the third invention. FIG. 2B shows a case where Xd and Xo have moved the same distance on G1 (Xd is suspended from G1) from the state of FIG. 2A (side view). FIG. 2C shows a case where only Xo has moved on G1 from the state of FIG. 2B (side view).

第四發明是在第一發明的基礎上，所述供體台的X軸安裝在所述平臺1上，所述光學台放置在與所述平臺1和所述平臺2都不同的平臺3（第三平臺）上。The fourth invention is based on the first invention. The X-axis of the donor table is installed on the platform 1, and the optical table is placed on a platform 3 that is different from both the platform 1 and the platform 2 ( on the third platform).

在此，「設置在平臺1上」包含放置在平臺1上的狀態和從平臺1懸掛設置的狀態，但是並不限定於這些狀態。Here, "installed on the platform 1" includes a state of being placed on the platform 1 and a state of being suspended from the platform 1, but is not limited to these states.

第五發明是在第一發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The fifth invention is based on the first invention. There is a rotation adjustment mechanism between the X axis of the donor table and the platform 1 for finely adjusting the installation angle in the XY plane between the two. A rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X axis of the donor table and the Y axis of the donor table is provided.

在此，圖3A表示設置在供體台的X軸（Xd）和平臺1（G1）之間的轉動調整機構（RP）的一個例子。在所述圖3A中，左圖表示俯視圖，右圖表示從X軸方向觀察的側視圖。此外，在俯視圖中，位於外側的一列的孔用於與G1的固定，並且為了具有轉動調整功能而具有“游隙”（餘裕、寬裕）。此外，在俯視圖中，位於內側的二列的孔是使螺絲通過的孔，該螺絲用於固定該RP和Xd的直線導軌。另外，也可以將具有“遊隙”的一側作為該Xd的直線導軌用的孔，但是在以獨立且平行的方式固定兩個直線導軌的情況下，存在設置工序的難易度上升的可能性。Here, FIG. 3A shows an example of the rotation adjustment mechanism (RP) provided between the X-axis (Xd) of the donor table and the stage 1 (G1). In FIG. 3A , the left figure shows a top view, and the right figure shows a side view viewed from the X-axis direction. In addition, in the top view, the holes in the outer row are used for fixing to G1, and have "play" (allowance, room) for the rotation adjustment function. In addition, in the top view, the holes located in the second row on the inner side are holes for passing screws for fixing the linear guide rails of the RP and Xd. In addition, the side with "play" can also be used as the hole for the linear guide rail of Xd. However, when two linear guide rails are independently and parallelly fixed, the difficulty of the installation process may increase. .

另一方面，圖3B 表示設置在Xd與懸掛設置於Xd的供體台的Y軸（Yd）之間的RP的一個例子。在俯視圖中，位於外側的二列的孔用於與Xd的固定，並且為了具有轉動調整功能而具有“遊隙”。此外，沿Y軸方向排列的二列的孔用於與Yd的固定。On the other hand, FIG. 3B shows an example of RP provided between Xd and the Y-axis (Yd) of the donor table suspended from Xd. In the top view, the two rows of holes located on the outside are used for fixing to Xd, and have "play" in order to have a rotation adjustment function. In addition, two rows of holes arranged along the Y-axis direction are used for fixing to Yd.

此外，作為設置在G1和Xd之間的RP，可以使用與前述的RP不同的RP。例如，將支點（Z軸方向的轉動軸）設置在該RP與G1的接觸面上，該支點用於相對於G1在XY平面內對放置Xd的RP進行轉動調整（省略圖示），在充分遠離所述支點的RP的側面（鉛垂面）設置相對於該支點的力點。在該力點附近的G1上設置朝向力點沿水準推壓的大型螺絲。同樣，在與其相反側的RP的側面設置大型螺絲。由此，能夠使放置有Xd的該RP相對於G1以所述支點為中心以微弧度[μrad]數量級在XY平面內轉動。In addition, as the RP set between G1 and Xd, an RP different from the aforementioned RP may be used. For example, a fulcrum (the rotation axis in the Z-axis direction) is set on the contact surface between the RP and G1. This fulcrum is used to rotate the RP placed Xd in the XY plane relative to G1 (illustration omitted). The side (vertical plane) of the RP away from the fulcrum sets the point of force relative to the fulcrum. A large screw is installed on G1 near the force point and is pushed horizontally toward the force point. Likewise, set large screws on the side of the RP on the opposite side. Thus, the RP with Xd placed thereon can be rotated relative to G1 in the XY plane with the fulcrum as the center in the order of microradians [μrad].

第六發明是在第二發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述光學台之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The sixth invention is based on the second invention. There is a rotation adjustment mechanism between the X axis of the donor table and the platform 1 for finely adjusting the installation angle in the XY plane between the two. Between the X-axis of the donor table and the optical table, there is a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the two. There is a rotation adjustment mechanism between the Y axes of the donor table for finely adjusting the installation angle in the XY plane between the two.

作為上述RP，例如可以使用用於上述的圖3A所示的G1和Xd之間的RP、用於圖3C所示的Xd和Xo之間的RP、以及用於圖3B所示的Xd和Yd之間的RP。As the above-mentioned RP, for example, the RP used between G1 and Xd shown in FIG. 3A , the RP used between Xd and Xo shown in FIG. 3C , and the RP used between Xd and Yd shown in FIG. 3B can be used. between RP.

第七發明是在第三發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述光學台和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The seventh invention is based on the third invention. There is a rotation adjustment mechanism between the X axis of the donor table and the platform 1 for finely adjusting the installation angle in the XY plane between the two. There is a rotation adjustment mechanism between the optical table and the platform 1 for finely adjusting the installation angle in the XY plane between the two. Between the X axis of the donor table and the There is a rotation adjustment mechanism between the Y axes for finely adjusting the installation angle in the XY plane between them.

在此，例如，作為Xo和G1之間以及Xd和G1之間的轉動調整機構分別使用圖3A所示的RP，另一方面，作為Xd和Yd之間的轉動調整機構使用圖3B所示的RP。前者的RP上具有使Xo和Xd的直線導軌固定用螺絲通過的孔，使用該孔所具有的「遊隙」，調整固定有各台用直線導軌的RP和G1的XY平面內的設置角度。Here, for example, RP shown in FIG. 3A is used as the rotation adjustment mechanism between Xo and G1 and between Xd and G1. On the other hand, as the rotation adjustment mechanism between Xd and Yd, RP shown in FIG. 3B is used. RP. The RP of the former has holes for passing the screws for fixing the linear guides Xo and

第八發明是在第四發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述光學台和所述平臺3之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The eighth invention is based on the fourth invention. There is a rotation adjustment mechanism between the X axis of the donor table and the platform 1 for finely adjusting the installation angle in the XY plane between the two. There is a rotation adjustment mechanism between the optical table and the platform 3 for finely adjusting the installation angle in the XY plane between the two. Between the X axis of the donor table and the There is a rotation adjustment mechanism between the Y axes for finely adjusting the installation angle in the XY plane between the two.

第九發明是在第一發明至第八發明中的任意一項發明的基礎上，所述鐳射裝置是準分子雷射器。A ninth invention is based on any one of the first to eighth inventions, wherein the laser device is an excimer laser.

在此，準分子雷射器的振盪波長主要是193[nm]、248[nm]、308[nm]或351[nm]，根據光吸收層的材料和對象物的光吸收特性，從它們中適當選擇。Here, the oscillation wavelength of the excimer laser is mainly 193 [nm], 248 [nm], 308 [nm] or 351 [nm]. Depending on the material of the light absorption layer and the light absorption characteristics of the object, one of them can be selected. Choose appropriately.

第十發明是在第九發明的基礎上，所述轉移裝置包括脈衝光閘，所述脈衝光閘切斷從所述準分子雷射器射出的雷射脈衝的任意脈衝列。The tenth invention is based on the ninth invention, in which the transfer device includes a pulse shutter that cuts off any pulse train of laser pulses emitted from the excimer laser.

已為公眾所知的是，脈衝振盪的鐳射裝置從所述可程式設計的多軸控制裝置接收觸發信號並開始振盪，但是其振盪後的一定次數或一定時間內的脈衝的能量不穩定到由於應用的不同而不能使用的程度。由此，為了排除該不穩定的脈衝組，需要通過機械性的光閘動作排除上述脈衝組。具體地說，例如在以1[kHz]振盪的準分子雷射器的情況下，相鄰的雷射脈衝間的時間窗約為1[ms]，需要能夠在該時間內移動（橫穿）一定距離的高速的光閘功能。該一定距離依存於使光閘動作的場所的鐳射的空間大小，如果該距離是5[mm]，則所要求的光閘動作速度是5[m/s]，需要使用音圈（voice coil）等使光學元件出入光路的超高速光閘。另外，即使通過成形光學系統等使該空間的大小變小，能夠縮短光閘構件橫穿的距離，也會因鐳射的能量密度而容易損傷。It is known to the public that the pulse oscillation laser device receives the trigger signal from the programmable multi-axis control device and starts to oscillate, but the energy of the pulses after a certain number of times or within a certain period of time after the oscillation is unstable to the point where it is unstable due to The degree to which it cannot be used due to different applications. Therefore, in order to eliminate this unstable pulse group, it is necessary to eliminate the above-mentioned pulse group through a mechanical shutter operation. Specifically, for example, in the case of an excimer laser oscillating at 1 [kHz], the time window between adjacent laser pulses is approximately 1 [ms], and it is necessary to be able to move (traverse) within this time High-speed light shutter function at a certain distance. This certain distance depends on the size of the laser space where the shutter is operated. If the distance is 5 [mm], the required shutter operating speed is 5 [m/s], and a voice coil needs to be used. Such as the ultra-high-speed optical gate that allows optical elements to enter and exit the optical path. In addition, even if the size of the space is reduced by molding the optical system or the like to shorten the distance traversed by the shutter member, it will still be easily damaged due to the energy density of the laser.

第十一發明是在第十發明的基礎上，所述可程式設計的多軸控制裝置具有至少同時控制所述受體台的Y軸和所述供體台的Y軸的功能，並且包括使用用於對所述台的移動位置誤差進行修正而預先製作的二維分佈修正值資料來對所述移動位置誤差進行修正的裝置。The eleventh invention is based on the tenth invention. The programmable multi-axis control device has the function of simultaneously controlling at least the Y-axis of the recipient table and the Y-axis of the donor table, and includes using A device for correcting the movement position error of the stage by pre-creating two-dimensional distribution correction value data to correct the movement position error.

例如，使用Xd或Xo與、Yr或Yd的任意一種組合的類比的XY平面中的二維分佈修正值資料資訊，進行鐳射的照射時的受體基板和供體基板的位置修正。修正的位置誤差的主要原因包括伴隨各台的移動產生的縱搖（pitching）、偏轉（yawing）和橫搖（rolling），但是並不限定這些。此外，確定修正值的參數除了所述各台的位置資訊以外，還包含Yr和Yd的移動速度及它們的比。For example, the position correction of the acceptor substrate and the donor substrate during laser irradiation is performed using the two-dimensional distribution correction value data information in the XY plane that is analogous to any combination of Xd or Xo and Yr or Yd. The main causes of corrected position errors include, but are not limited to, pitching, yawing, and rolling caused by movement of each station. In addition, the parameters for determining the correction value include, in addition to the position information of each station, the moving speeds of Yr and Yd and their ratios.

第十二發明是在第十一發明的基礎上，監測所述供體基板的位置的高倍率照相機設置在所述受體台的Z軸上，或者監測所述受體基板的位置的高倍率照相機設置在所述供體台的X軸或與該供體台的X軸一起移動的部分上、或者設置在所述光學台或與該光學台一起移動的部分上。The twelfth invention is based on the eleventh invention, and a high-magnification camera for monitoring the position of the donor substrate is disposed on the Z-axis of the acceptor stage, or a high-magnification camera for monitoring the position of the acceptor substrate. The camera is disposed on the X-axis of the donor table or a part that moves together with the X-axis of the donor table, or on the optical table or a part that moves together with the optical table.

在此，在與「供體台的X軸一起移動的部分」中也包含懸掛設置於Xd的Yd。在本發明中，各台的Y軸之間的平行度和X軸之間的平行度以及各台的Y軸與X軸的垂直度是左右轉移位置精度的重要參數。此外，在組裝各台時的平行度和垂直度的檢驗中，相對於保持對準用基板的各台的移動距離，使用高倍率、高解析度的照相機監測與其垂直的方向上的偏差量，並使用所述轉動調整機構來進行垂直度的調整。此外，在Yr和Yd間的平行度的調整中，使兩個台同步移動（並行）相同距離，通過安裝在一個臺上的高倍率照相機，觀察附加在對置的臺上的進行了圖案匹配的對準標記圖像（十字標記等）的位置是否未移動而靜止。在該情況下，Y軸方向的移動表示Yd和Yr的同步異常，X軸方向的移動表示Yd和Yr的平行度的調整錯誤。Here, the "portion that moves together with the X-axis of the donor table" also includes Yd suspended from Xd. In the present invention, the parallelism between the Y-axis of each stage and the parallelism between the X-axis and the perpendicularity of the Y-axis and the X-axis of each stage are important parameters for the left and right transfer position accuracy. In addition, during the inspection of parallelism and perpendicularity when each stage is assembled, a high-magnification, high-resolution camera is used to monitor the amount of deviation in the direction perpendicular to the movement distance of each stage holding the alignment substrate, and Use the rotation adjustment mechanism to adjust the verticality. In addition, during the adjustment of the parallelism between Yr and Yd, the two stages were moved synchronously (parallel) by the same distance, and pattern matching was performed by observing the pattern attached to the opposite stage through a high-magnification camera installed on one stage. Check whether the position of the alignment mark image (cross mark, etc.) has not moved but is still. In this case, the movement in the Y-axis direction indicates an abnormality in the synchronization of Yd and Yr, and the movement in the X-axis direction indicates an adjustment error in the parallelism of Yd and Yr.

另外，作為高倍率照相機通常使用CCD照相機。倍率等依存於轉移位置精度，但是作為一個例子，在檢測所述[μrad]數量級的偏差量的情況下亦即在相對於1[m]的台移動距離檢測1[μm]的偏差量的情況下，可以使用解析度1[μm]且倍率為20倍～50倍程度的照相機。In addition, a CCD camera is generally used as a high-magnification camera. The magnification and the like depend on the transfer position accuracy, but as an example, when a deviation of the order of [μrad] is detected, that is, when a deviation of 1 [μm] is detected with respect to a stage movement distance of 1 [m], Below, a camera with a resolution of 1 [μm] and a magnification of approximately 20x to 50x can be used.

第十三發明是在第十二發明的基礎上，所述供體台和所述受體台包括間隙感測器，所述間隙感測器測量所述供體基板的表面（下表面）與所述受體基板的表面的間隙。The thirteenth invention is based on the twelfth invention. The donor stage and the acceptor stage include gap sensors, and the gap sensors measure the relationship between the surface (lower surface) of the donor substrate and gaps on the surface of the receptor substrate.

在此，間隙感測器是指組合了分別設置在供體和受體臺上的高度感測器的感測器，設置在供體臺上的高度感測器測量到受體基板的距離，設置在受體臺上的高度感測器測量到供體基板的距離，根據兩個測量值和高度感測器的高度資訊，計算供體基板與受體基板間的間隙。Here, the gap sensor refers to a sensor that combines height sensors respectively provided on the donor stage and the recipient stage. The height sensor provided on the donor stage measures the distance to the acceptor substrate. A height sensor installed on the recipient stage measures the distance to the donor substrate, and based on the two measured values and the height information of the height sensor, the gap between the donor substrate and the recipient substrate is calculated.

第十四發明是在第十三發明的基礎上，作為所述受體台的Y軸用和所述供體台的Y軸用，分別包括使用鐳射干涉計的位置測量裝置。The fourteenth invention is based on the thirteenth invention, and includes position measuring devices using laser interferometers for the Y-axis of the recipient table and the Y-axis of the donor table, respectively.

作為受體台的Y軸（Yr）用鐳射干涉計的結構，可以使用包括以下部件的結構：反射鏡（Ic），保持在與Yr一起移動的部分上；干涉計用鐳射（IL），固定在例如平臺2（G2）等不容易受到因所述移動產生的振動等的影響的平臺上；以及1/4波長板等（省略圖示）。此外，作為所述反射鏡，適合使用三軸的角錐棱鏡（逆反射器（retro-reflector）），並優選盡可能接近受體基板的位置（高度）。由圖5A表示概況（省略了供體台組和受體台的Z軸、θ軸的圖示）。As the structure of the laser interferometer for the Y-axis (Yr) of the receptor stage, a structure including the following components can be used: the reflector (Ic), which is held on the part that moves together with Yr; the laser (IL) for the interferometer, which is fixed For example, on a platform that is not easily affected by vibration caused by the movement, such as platform 2 (G2); and on a 1/4-wavelength plate (not shown). In addition, as the reflector, a three-axis corner cube prism (retro-reflector) is suitably used, and the position (height) is preferably as close as possible to the receptor substrate. An overview is shown in FIG. 5A (the Z-axis and θ-axis of the donor stage group and the recipient stage are omitted).

基於來自所述線性編碼器的位置資訊，通過可程式設計的多軸控制裝置來控制Yr，將所述鐳射干涉計用於作為所述線性編碼器的校正、以及作為在後述的Yr和Yd的齒輪模式動作中精細地調整其齒輪比時的校正。Based on the position information from the linear encoder, Yr is controlled by a programmable multi-axis control device, and the laser interferometer is used as a correction of the linear encoder and as a correction of Yr and Yd described later. Correction for gear mode actions when finely adjusting their gear ratios.

作為供體台的Y軸（Yd）用鐳射干涉計的結構，可以使用包括以下部件的結構：Ic，保持在與懸掛設置於Xd的Yd一起移動的面上；IL，以同樣方式固定在Xd上；以及1/4波長板等（省略圖示）。在此，作為所述反射鏡，適合使用三軸的角錐稜鏡（逆反射器），優選盡可能接近供體基板的位置（高度）。由圖5B表示概況。（受體台組省略圖示）另外，對於任意一個干涉計用鐳射的檢測方式的選擇，只要根據所要求的轉移位置精度來選擇最適合的方式即可。As the structure of the laser interferometer for the Y-axis (Yd) of the donor stage, a structure including the following components can be used: Ic, which is maintained on a surface that moves together with Yd suspended from Xd; IL, which is fixed on Xd in the same way on; and 1/4 wavelength plate, etc. (illustration omitted). Here, as the reflector, a three-axis pyramid mirror (retroreflector) is suitably used, preferably as close as possible to the position (height) of the donor substrate. An overview is shown in Figure 5B. (The receptor stage group is not shown in the figure.) In addition, regarding the selection of the laser detection method for any interferometer, it is only necessary to select the most suitable method according to the required transfer position accuracy.

第十五發明是在第十四發明的基礎上，所述轉移裝置包括共焦點光束輪廓儀，所述共焦點光束輪廓儀在與通過所述投影透鏡對所述光罩的圖案進行縮小投影並成像的位置共軛的位置具有焦平面。The fifteenth invention is based on the fourteenth invention. The transfer device includes a confocal beam profiler. The confocal beam profiler reduces and projects the pattern of the mask through the projection lens. The imaged position is conjugate to the position having the focal plane.

通過該共焦點光束輪廓儀，能夠即時且以與縮小成像光學系統的成像解析度同等的精度，監測向供體基板表面縮小投影的鐳射的位置和空間強度分佈的狀態以及其成像狀態。With this confocal beam profiler, the position and spatial intensity distribution of the laser projected onto the surface of the donor substrate can be monitored instantly and with the same accuracy as the imaging resolution of the reduced imaging optical system, as well as its imaging state.

第十六發明是一種轉移裝置的使用方法，所述轉移裝置是第十三發明的轉移裝置，使用所述間隙感測器，與供體基板的XY位置資訊一起預先測量供體基板的彎曲量，基於通過所述測量得到的彎曲量的二維分佈資料，邊使用通過所述受體台的Z軸（Zr）或所述投影透鏡的Z軸台進行的調整，邊對供體基板與受體基板的間隙進行修正。The sixteenth invention is a method of using a transfer device. The transfer device is the transfer device of the thirteenth invention. The gap sensor is used to pre-measure the bending amount of the donor substrate together with the XY position information of the donor substrate. , based on the two-dimensional distribution data of the bending amount obtained by the measurement, while using the Z-axis (Zr) of the receptor stage or the Z-axis stage of the projection lens, the donor substrate and the recipient are aligned. The gap between the body substrate and the base plate is corrected.

第十七發明是一種轉移裝置的調整方法，所述轉移裝置是第五發明至第八發明中的任意一項所述的轉移裝置，所述轉移裝置的調整方法是組裝所述轉移裝置的工序中的所述受體台的Y軸和所述供體台的Y軸的平行度的調整方法，所述轉移裝置的調整方法以與所述受體台的Z軸和θ軸一起進行了直線度的調整的所述受體台的Y軸為基準，依次包括如下的步驟：通過位於所述平臺1和所述供體台的X軸之間的轉動調整機構，對所述受體台的Y軸與所述供體台的X軸的垂直度進行調整；使懸掛設置於調整了垂直度的所述供體台的X軸的供體台的Y軸和所述受體台的Y軸同步平排行進，通過安裝在與所述受體台的Y軸一起移動的部位上的高倍率照相機，觀察對置的供體台的Y軸上的對準標記；以及基於所述觀察的結果，通過所述供體台的X軸和所述供體台的Y軸之間的轉動調整機構，對所述受體台的Y軸與所述供體台的Y軸的平行度進行調整。The seventeenth invention is a method for adjusting a transfer device. The transfer device is the transfer device according to any one of the fifth to eighth inventions. The method for adjusting the transfer device is a process of assembling the transfer device. The adjustment method of the parallelism between the Y-axis of the recipient table and the Y-axis of the donor table, and the adjustment method of the transfer device in a straight line with the Z-axis and θ-axis of the recipient table The adjustment of the degree of adjustment takes the Y-axis of the recipient table as a reference and includes the following steps: through the rotation adjustment mechanism located between the platform 1 and the X-axis of the donor table, adjust the Y-axis of the recipient table. The verticality of the Y-axis and the X-axis of the donor table is adjusted; the Y-axis of the donor table and the Y-axis of the recipient table are suspended from the X-axis of the donor table with the verticality adjusted Simultaneously traveling in parallel, observing the alignment marks on the Y-axis of the opposing donor table through a high-magnification camera installed on a part that moves together with the Y-axis of the recipient table; and the results based on the observation , through the rotation adjustment mechanism between the X axis of the donor table and the Y axis of the donor table, the parallelism of the Y axis of the recipient table and the Y axis of the donor table is adjusted.

另外，為了高精度地確認並調整Yd與Yr的平行度，優選的是，高倍率照相機位於放置在Yr上的各台和板等中最高的位置，並且安裝在剛性高的部分上。In addition, in order to confirm and adjust the parallelism between Yd and Yr with high accuracy, it is preferable that the high-magnification camera is located at the highest position among the stages, plates, etc. placed on Yr, and is mounted on a part with high rigidity.

本發明能夠在供體基板和受體基板的高同步位置精度的基礎上，在保持高轉移位置精度的同時實現轉移裝置的受體基板的大型化和縮短節拍時間。The present invention is capable of enlarging the acceptor substrate of the transfer device and shortening the cycle time while maintaining high transfer position accuracy on the basis of high synchronization position accuracy of the donor substrate and the acceptor substrate.

下面，參照附圖對本發明的轉移裝置的具體結構進行詳細說明。Next, the specific structure of the transfer device of the present invention will be described in detail with reference to the accompanying drawings.

[實施例1][Example 1]

在本實施例1中，表示如下的實施例：在尺寸為200×200[mm]的供體基板上，將隔著光吸收層形成為一片的層狀（固態膜）對象物作為每個形狀為10×10[μm]的單元狀的轉移對象物，以縱12000×橫12000的合計144百萬個矩陣狀的方式向尺寸為400×400[mm]的受體基板轉移。上述144百萬個的轉移位置是±1[μm]的位置精度，各縱、橫的間距是30[μm]。This Example 1 shows an example in which a layered (solid film) object is formed into one piece on a donor substrate with a size of 200 × 200 [mm] with a light absorbing layer interposed therebetween. The unit-shaped transfer object of 10×10 [μm] is transferred to a receptor substrate with a size of 400×400 [mm] in a matrix of a total of 144 million units with a length of 12000×12000. The above-mentioned 144 million transfer positions have a positional accuracy of ±1 [μm], and the vertical and horizontal pitches are 30 [μm].

首先，圖1A表示與本發明的實施相關的轉移裝置的主要結構部分。另外，在圖1A中省略了鐳射裝置、控制裝置和其它監視器等的圖示，X軸、Y軸和Z軸方向如圖中所示。平臺1（G1）、平臺11（G11）、平臺12（G12）和平臺2（G2）全部為使用花崗岩的石平臺。此外，基礎平臺（G）使用了剛性高的鐵。另外，本實施例是將上述第六發明的構成作為基礎的實施例。First, FIG. 1A shows the main structural parts of the transfer device related to the implementation of the present invention. In addition, the laser device, control device, other monitors, etc. are not shown in FIG. 1A , and the X-axis, Y-axis, and Z-axis directions are as shown in the figure. Platform 1 (G1), Platform 11 (G11), Platform 12 (G12), and Platform 2 (G2) are all stone platforms using granite. In addition, the base platform (G) uses highly rigid iron. In addition, this embodiment is an embodiment based on the structure of the above-mentioned sixth invention.

按照從鐳射裝置射出脈衝鐳射並照射到供體基板上的對象物為止的鐳射的傳輸順序，依次對本發明的實施例1的轉移裝置的構成進行說明。首先，在本實施例1中使用的鐳射裝置是振盪波長為248[nm]的準分子雷射器。射出的鐳射的空間分佈大約為8×24[mm]，光束發散角是1×3毫弧度[mrad]。以上均是（縱×橫）的記載，數值是FWHM。The structure of the transfer device according to Embodiment 1 of the present invention will be described in order according to the laser transmission sequence until the pulsed laser is emitted from the laser device and irradiated onto the target object on the donor substrate. First, the laser device used in this embodiment 1 is an excimer laser with an oscillation wavelength of 248 [nm]. The spatial distribution of the emitted laser is approximately 8 × 24 [mm], and the beam divergence angle is 1 × 3 milliradians [mrad]. The above are all recorded in (vertical × horizontal), and the numerical value is FWHM.

另外，準分子雷射器的規格為多種，根據輸出的不同、重複頻率的不同、光束尺寸的不同和光束發散角的不同等，存在有射出的鐳射縱向長（使所述縱和橫反轉）的準分子雷射器，但是通過光學系統的追加、省略或設計變更，存在有多種能夠在本實施例1中使用的準分子雷射器。此外，雖然鐳射裝置依存於其大小，但是一般來說設置在與設置有轉移裝置的台組的基座不同的基座（鐳射用平臺）上。In addition, there are many specifications of excimer lasers. Depending on the output, repetition frequency, beam size, beam divergence angle, etc., the vertical length of the emitted laser may vary (inverting the longitudinal and transverse directions). ) excimer laser, however, there are various excimer lasers that can be used in the first embodiment by adding, omitting, or changing the design of the optical system. In addition, although the laser device depends on its size, it is generally installed on a base (laser platform) different from the base of the stage group on which the transfer device is installed.

來自準分子雷射器的射出光射入望遠鏡光學系統，並向其前方的整形光學系統傳輸。在此，如圖1A所示，整形光學系統以使光軸沿X軸的方式保持在光學台（Xo）上，該光學台設置在使供體基板移動的供體台的X軸（Xd）上。此外，就要射入該整形光學系統之前的鐳射以在所述供體台的X軸的移動範圍內的任意位置都成為大體平行光的方式由望遠鏡光學系統進行調整。因此，不論Xd和/或Xo的X軸方向的移動怎樣，鐳射始終以大體相同尺寸、相同角度（垂直）射入整形光學系統。在本實施例1中，其尺寸約為25×25[mm]（縱×橫）。The emitted light from the excimer laser enters the telescope optical system and is transmitted to the shaping optical system in front of it. Here, as shown in FIG. 1A , the shaping optical system is held on an optical table (Xo) provided on the X-axis (Xd) of the donor table that moves the donor substrate so that the optical axis is along the X-axis. superior. In addition, the laser beam immediately before entering the shaping optical system is adjusted by the telescope optical system so that it becomes substantially parallel light at any position within the movement range of the X-axis of the donor stage. Therefore, regardless of the movement of Xd and/or Xo in the X-axis direction, the laser always enters the shaping optical system with substantially the same size and the same angle (vertical). In this embodiment 1, the size is approximately 25×25 [mm] (length×width).

本實施例1的整形光學系統（H）在與光軸方向垂直的平面內，將兩個一組的單軸柱面透鏡陣列組合成兩組直角。其配置為：各組內的前級的透鏡陣列通過後級的透鏡陣列和位於其後方的聚光透鏡（省略圖示），在光罩（M）上成像。The shaping optical system (H) of this embodiment 1 combines two sets of single-axis cylindrical lens arrays into two sets of right angles in a plane perpendicular to the optical axis direction. The configuration is as follows: the front-stage lens array in each group forms an image on the reticle (M) through the rear-stage lens array and the condenser lens (not shown) located behind it.

通過了整形光學系統的鐳射經由在與投影透鏡（Pl）的組合中構成圖像側遠心縮小投影光學系統的場鏡（F）射入光罩。在光罩上的鐳射的尺寸是1×50[mm]（FWHM），其空間強度分佈均勻性為±5%以內的區域的尺寸維持0.5×45[mm]以上。The laser that has passed through the shaping optical system enters the reticle via a field lens (F) that constitutes an image-side telecentric reduction projection optical system in combination with the projection lens (Pl). The size of the laser on the mask is 1 × 50 [mm] (FWHM), and the size of the area where the spatial intensity distribution uniformity is within ±5% is maintained at 0.5 × 45 [mm] or more.

光罩固定在光罩臺上，如上所述，所述光罩台具有合計六軸調整機構，所述六軸為：與場鏡一起沿X軸方向移動的W軸、Y軸方向的U軸、沿Z軸方向移動的V軸、作為YZ平面內的轉動軸的R軸、調整相對於V軸的傾斜度的TV軸、以及調整相對於U軸的傾斜度的TU軸。The mask is fixed on the mask stage. As mentioned above, the mask stage has a total of six-axis adjustment mechanism. The six axes are: the W axis that moves along the X-axis direction together with the field lens, and the U-axis in the Y-axis direction. , the V axis that moves in the Z-axis direction, the R axis that is the rotation axis in the YZ plane, the TV axis that adjusts the inclination with respect to the V axis, and the TU axis that adjusts the inclination with respect to the U axis.

本實施例1的光罩使用通過鍍鉻在合成石英板上描繪（形成）有圖案的光罩。圖6表示其概略。在該光罩中，未實施鍍鉻的、表示為白色的窗部分（a）透過鐳射，實施了鍍鉻的有顏色部分（b）遮擋鐳射。一個窗的形狀（a）是50×50[μm]，將其沿X軸方向（一列）以150[μm]間隔連續43.85[mm]合計配置300個。此外，實施鍍鉻的面是鐳射的射出側，另一方面，射入側設有248[nm]用的反射防止膜。此外，代替鍍鉻，可以使用鋁蒸鍍或電介質多層膜。The photomask of Example 1 uses a photomask in which a pattern is drawn (formed) on a synthetic quartz plate by chromium plating. Figure 6 shows its outline. In this mask, the white portion of the window (a) that is not chromed is transmitted through the laser, and the colored portion (b) that is chromed blocks the laser. The shape (a) of one window is 50×50 [μm], and a total of 300 windows are arranged continuously at intervals of 150 [μm] and 43.85 [mm] along the X-axis direction (one column). In addition, the chromium-plated surface is the exit side of the laser, and on the other hand, the entrance side is provided with an anti-reflection film for 248 [nm]. Furthermore, instead of chromium plating, aluminum evaporation or dielectric multilayer film can be used.

另外，當在一個光罩上切換使用多個圖案的轉移工序的情況下，如果在從所述整形光學系統向光罩上照射的鐳射的尺寸的範圍內、且在光罩台的可動範圍內，則可以使用描繪有不同的圖案的光罩。In addition, when switching the transfer process of using multiple patterns on one mask, if the size of the laser irradiated from the shaping optical system to the mask is within the range of the movable range of the mask stage, , you can use masks depicting different patterns.

此外，在圖7中，當在使受體基板（R）進行一次掃描期間（其中也包含中途停止）使用以相同速度多次或往返對供體基板（D）進行掃描的轉移工序等情況下，圖6所示的光罩圖案可以不是一列，而是可以採用多列圖案（但是鐳射照射在該光罩圖案中間歇且選擇性地進行照射。圖7中表示為3×2列的矩陣）。由此，能夠使用與受體基板相比尺寸小的供體基板。In addition, in FIG. 7 , when a transfer process is used to scan the donor substrate (D) multiple times or back and forth at the same speed while the acceptor substrate (R) is scanned once (including stopping in the middle), etc. , the mask pattern shown in Figure 6 may not be one column, but may adopt a multi-column pattern (but the laser irradiation is intermittently and selectively irradiated in the mask pattern. It is represented as a 3×2 column matrix in Figure 7) . This makes it possible to use a donor substrate smaller in size than the acceptor substrate.

通過了所述光罩圖案的鐳射通過落射鏡將其傳輸方向改變為朝向鉛垂下方（－Z方向）並射入投影透鏡。該投影透鏡設有248nm用的反射防止膜，具有1/5的縮小倍率。詳細如下表1所示。The laser that has passed through the mask pattern changes its transmission direction to vertically downward (-Z direction) through the epi-mirror and enters the projection lens. This projection lens is equipped with an anti-reflection film for 248nm and has a reduction magnification of 1/5. Details are shown in Table 1 below.

[表1] 投影透鏡的詳細規格 適用波長[nm] 248 投影面尺寸[mm] 1.0×15.0 透鏡縮小倍率 1/5 解析度（線和空間）[μm] 2 NA 0.13 從光罩到投影面的距離[mm] 1050 [Table 1] Projection lens detailed specifications Applicable wavelength [nm] 248 Projection surface size [mm] 1.0×15.0 Lens reduction magnification 1/5 Resolution (line and space) [μm] 2 NA 0.13 Distance from mask to projection surface [mm] 1050

從投影透鏡射出的鐳射從供體基板的背面射入，以所述光罩圖案的1/5的縮小尺寸準確地向形成於其表面（下表面）的光吸收層的規定位置進行投影。在此，以預先附加於供體基板的對準標記等為基準，通過供體台的X軸（Xd）、Y軸（Yd）和θ軸（θd）進行調整後，決定XY平面內的規定位置。The laser emitted from the projection lens enters from the back surface of the donor substrate and is accurately projected to a predetermined position of the light absorbing layer formed on the surface (lower surface) of the mask pattern at a reduced size of 1/5. Here, after adjusting the X-axis (Xd), Y-axis (Yd), and θ-axis (θd) of the donor stage based on the alignment marks etc. previously added to the donor substrate, the prescribed position in the XY plane is determined. Location.

為了調整成由投影透鏡生成的光罩圖案的圖像面聚焦於供體基板的表面和光吸收層的邊介面，調整投影透鏡的Z軸台（Zl）和放置有場鏡（F）的光罩台的W軸的位置。另外，雖然可以追加供體基板的Z軸方向的調整功能（Z軸台），但是需要考慮因向供體台的X軸（Xd）增加加重負荷導致的轉移位置精度的下降。In order to adjust the image plane of the mask pattern generated by the projection lens to focus on the surface of the donor substrate and the edge interface of the light absorption layer, adjust the Z-axis stage (Zl) of the projection lens and the mask on which the field lens (F) is placed. The position of the W axis of the stage. In addition, although the Z-axis direction adjustment function of the donor substrate (Z-axis stage) can be added, it is necessary to consider the decrease in transfer position accuracy caused by adding a weighted load to the X-axis (Xd) of the donor stage.

調整供體基板表面和光吸收層的邊介面的成像位置時，使用在焦平面上具有與像平面為共軛關係的平面的共焦點光束輪廓儀（BP）的即時監測是有效的。圖8表示該調整畫面的情況。在本實施例1中，即時且以高解析度監測縮小成像於供體基板表面和光吸收層的邊介面的鐳射的空間強度分佈。When adjusting the imaging position of the edge interface between the donor substrate surface and the light-absorbing layer, real-time monitoring using a confocal beam profiler (BP) with a plane on the focal plane that is in a conjugate relationship with the image plane is effective. FIG. 8 shows this adjustment screen. In this embodiment 1, the spatial intensity distribution of the laser imaged on the edge interface of the donor substrate surface and the light absorbing layer is monitored in real time and with high resolution.

以上是與從鐳射裝置射出的脈衝鐳射的傳輸有關的本實施例1的裝置結構所實現的功能。The above is the function achieved by the device structure of the first embodiment related to the transmission of pulsed laser emitted from the laser device.

接著，簡單說明在本發明的裝置中如何使用本實施例1的結構以機械方式實現受體台的Y軸（Yr）與供體台的Y軸（Yd）的平行度。Next, a brief description will be given of how to use the structure of Embodiment 1 to mechanically achieve parallelism between the Y-axis (Yr) of the recipient table and the Y-axis (Yd) of the donor table in the device of the present invention.

各台如圖1A所示，在石平臺1（G1）上放置供體台的X軸（Xd），並且在其上放置光學台（Xo）。受體台組（Yr、θr、Zr）放置在石平臺2（G2）上。此外，整體構建在基礎平臺（G）上。此外，轉動調整機構（RP）設置在G1和Xd之間、Xo和Xd之間、以及Xd和Yd之間（省略圖示）。Each stage is as shown in Figure 1A. The X-axis (Xd) of the donor stage is placed on the stone platform 1 (G1), and the optical stage (Xo) is placed on it. The receptor platform group (Yr, θr, Zr) is placed on stone platform 2 (G2). Furthermore, the whole is built on the base platform (G). In addition, the rotation adjustment mechanism (RP) is provided between G1 and Xd, between Xo and Xd, and between Xd and Yd (illustration omitted).

另外，為了調整各台的軸的垂直度和平行度，代替供體基板使用保持在供體臺上的調整基板AD，並且代替受體基板使用放置在受體臺上的調整基板AR。在任意一個調整基板上作為對準線描繪有表示準確地形成直角的X軸（對準線X）和Y軸（對準線Y）的線，並且在規定的位置（間隔）處也附加有標記。In addition, in order to adjust the perpendicularity and parallelism of the axis of each stage, an adjustment substrate AD held on the donor stage is used instead of the donor substrate, and an adjustment substrate AR placed on the receptor stage is used instead of the acceptor substrate. Lines representing the X-axis (Alignment Line mark.

1）Yr與AR（Y）的平行度（Yr與AR（X）的垂直度）1) Parallelism between Yr and AR (Y) (perpendicularity between Yr and AR (X))

為了調整受體台的Y軸（Yr）與調整基板AR上的對準線Y的平行度，通過高倍率CCD照相機觀察放置在受體台的Z軸（Zr）上的調整基板AR，所述高倍率CCD照相機固定在光學台（Xo）上或設置於光學台（Xo）的投影透鏡用的Z軸臺上。使所述Yr軸移動400[mm]，以使對準線Y的X軸方向的偏差量在1[μm]以內的方式使用受體台的θ軸（θr）進行調整。另外，此時的台的移動距離在台的有效行程的範圍內，此外，應容許的偏差量根據所要求的轉移精度而變化。（以下相同）In order to adjust the parallelism between the Y-axis (Yr) of the receptor stage and the alignment line Y on the adjustment substrate AR, observe the adjustment substrate AR placed on the Z-axis (Zr) of the receptor stage through a high-magnification CCD camera, as described The high-magnification CCD camera is fixed on the optical table (Xo) or on the Z-axis table for the projection lens of the optical table (Xo). The Yr axis is moved by 400 [mm], and the θ axis (θr) of the receptor table is adjusted so that the deviation amount in the X axis direction of the alignment line Y is within 1 [μm]. In addition, the movement distance of the stage at this time is within the range of the effective stroke of the stage, and the amount of deviation that should be allowed changes depending on the required transfer accuracy. (Same below)

2）AR（X）與Xd的平行度（Yr與Xd的垂直度）2) Parallelism between AR (X) and Xd (perpendicularity between Yr and Xd)

接著，使用通過上述方式調整了的調整基板AR的對準線X，通過高倍率CCD照相機邊觀察邊調整供體台的X軸（Xd）與受體台的Y軸（Yr）的垂直度，所述高倍率CCD照相機同樣固定在光學台（Xo）上或設置於光學台（Xo）的投影透鏡用的Z軸臺上。使所述Xd軸移動400[mm]，以使對準線X的Y軸方向的偏差量在1[μm]以內的方式使用所述G1與Xd之間的轉動調整機構調整兩者的安裝角度，並且調整G1與Xd亦即Xd相對於Yr的安裝角度。Next, using the alignment line The high-magnification CCD camera is also fixed on the optical table (Xo) or on the Z-axis table for the projection lens of the optical table (Xo). Move the Xd axis by 400 [mm], and use the rotation adjustment mechanism between G1 and Xd to adjust the installation angle between them so that the deviation in the Y axis direction of the alignment line X is within 1 [μm]. , and adjust G1 and Xd, that is, the installation angle of Xd relative to Yr.

3）AR（X）與Xo的平行度（Yr與Xo的垂直度、Xd與Xo的平行度）3) Parallelism between AR (X) and Xo (perpendicularity between Yr and Xo, parallelism between Xd and Xo)

使用通過上述方式調整了的調整基板AR的對準線X，通過高倍率CCD照相機邊觀察邊調整光學台（Xo）與供體台的X軸（Xd）的平行度，所述高倍率CCD照相機固定在光學台（Xo）上或設置於該光學台（Xo）的投影透鏡用的Z軸臺上。使所述Xo軸移動200[mm]，以使對準線X的Y軸方向的偏差量在0.5[μm]以內的方式通過兩者間的轉動調整機構調整光學台（Xo）相對於供體台的X軸（Xd）的平行度。Using the alignment line It is fixed on the optical table (Xo) or on the Z-axis table for the projection lens installed on the optical table (Xo). Move the Xo axis by 200 [mm], and adjust the optical table (Xo) relative to the donor through the rotation adjustment mechanism between the alignment line X and the Y axis direction so that the deviation amount is within 0.5 [μm]. Parallelism of the table’s X-axis (Xd).

4）Yd與AD（Y）的平行度4) Parallelism between Yd and AD(Y)

為了調整供體台的Y軸（Yd）與調整基板AD上的對準線Y的平行度，通過高倍率CCD照相機觀察保持在供體台的θ軸（θd）上的調整基板AD，所述高倍率CCD照相機固定在光學台（Xo）上或設置於該光學台（Xo）的投影透鏡用的Z軸臺上。使所述Yd軸移動200[mm]，以使對準線Y的X軸方向的偏差量在0.5[μm]以內的方式使用供體台的θ軸（θd）進行調整。In order to adjust the parallelism between the Y axis (Yd) of the donor stage and the alignment line Y on the adjustment substrate AD, the adjustment substrate AD held on the θ axis (θd) of the donor stage is observed through a high-magnification CCD camera, as described The high-magnification CCD camera is fixed on the optical table (Xo) or on the Z-axis table for the projection lens installed on the optical table (Xo). The Yd axis is moved by 200 [mm], and the θ axis (θd) of the donor stage is adjusted so that the deviation amount in the X axis direction of the alignment line Y is within 0.5 [μm].

5）AD（X）與Xo的平行度（AD（X）與Xd的平行度、Xd與Yd的垂直度）5) Parallelism between AD (X) and Xo (parallelism between AD (X) and Xd, perpendicularity between Xd and Yd)

為了調整供體台的X軸（Xd）與供體台的Y軸（Yd）的垂直度，通過高倍率CCD照相機觀察調整基板AD上的對準線X，所述高倍率CCD照相機固定在已對與供體台的X軸（Xd）的平行度進行了調整的光學台（Xo）上或設置於該光學台（Xo）的投影透鏡用的Z軸臺上。使該光學台（Xo）移動200[mm]，以使對準線X的Y軸方向的偏差量在0.5[μm]以內的方式通過兩者間的轉動調整機構來調整與懸掛設置於供體台的X軸（Xd）上的供體台的Y軸（Yd）的垂直度。In order to adjust the perpendicularity between the X-axis (Xd) of the donor table and the Y-axis (Yd) of the donor table, the alignment line X on the substrate AD is observed and adjusted through a high-magnification CCD camera fixed on the already installed On an optical table (Xo) whose parallelism with the X-axis (Xd) of the donor table has been adjusted, or on a Z-axis table for a projection lens installed on the optical table (Xo). The optical table (Xo) is moved 200 [mm], and the rotation adjustment mechanism between the two is adjusted and suspended on the donor so that the deviation of the Y-axis direction of the alignment line X is within 0.5 [μm]. Verticality of the donor table's Y-axis (Yd) on the table's X-axis (Xd).

6）AD（Y）與Yr的平行度（Yd與Yr的平行度）6) Parallelism between AD (Y) and Yr (parallelism between Yd and Yr)

最後，為了確認供體台的Y軸（Yd）與受體台的Y軸（Yr）的平行度，在供體台的Y軸（Yd）上安裝高倍率CCD照相機，觀察放置在對置的受體臺上的調整基板AR的對準線Y。此時，預先取下調整基板AD。移動供體台的X軸（Xd），以使所述高倍率CCD照相機能夠觀察受體台的任意一端。接著，使供體台的Y軸（Yd）移動400[mm]，確認對準線Y的X軸方向的偏差量是否在1[μm]以內。此外，為了對受體台的另一端也進行同樣的確認，在使Xd移動到該另一端之後，再使Yd移動400[mm]，確認對準線Y的X軸方向的偏差量在1[μm]以內。另外，也可以使Yd和Yr並進並觀察對準標記的位置變化。Finally, in order to confirm the parallelism between the Y-axis (Yd) of the donor table and the Y-axis (Yr) of the recipient table, a high-magnification CCD camera was installed on the Y-axis (Yd) of the donor table, and the objects placed opposite each other were observed. Adjust the alignment line Y of the substrate AR on the receptor stage. At this time, the adjustment substrate AD is removed in advance. Move the X-axis (Xd) of the donor stage so that the high-magnification CCD camera can observe either end of the recipient stage. Next, the Y-axis (Yd) of the donor stage is moved by 400 [mm], and it is confirmed whether the deviation amount in the X-axis direction of the alignment line Y is within 1 [μm]. In addition, in order to make the same confirmation at the other end of the receptor table, after moving Xd to the other end, Yd was moved 400 [mm], and it was confirmed that the deviation amount of the alignment line Y in the X-axis direction was within 1 [mm]. μm] within. In addition, you can also move Yd and Yr in parallel and observe the position change of the alignment mark.

另外，在將高倍率CCD照相機安裝在供體台的Y軸（Yd）上的情況下，根據供體台的X軸的位置和石平臺1的形狀（開口），存在該高倍率CCD照相機與它們接觸的可能性。在該情況下，不將高倍率CCD照相機安裝在Yd上而是安裝在受體台的Z軸（Zr）上，通過使受體台的Y軸（Yr）移動200[mm]，也能夠觀察調整基板AD的對準線Y並確認其X軸方向的偏差量。In addition, when a high-magnification CCD camera is installed on the Y-axis (Yd) of the donor table, there are differences between the high-magnification CCD camera and the X-axis position of the donor table and the shape (opening) of the stone table 1. the possibility of their contact. In this case, it is possible to observe by mounting the high-magnification CCD camera not on Yd but on the Z-axis (Zr) of the receptor table and moving the Y-axis (Yr) of the receptor table by 200 [mm]. Adjust the alignment line Y of the substrate AD and confirm the amount of deviation in the X-axis direction.

由於石平臺1（G1）和石平臺2獨立地支承各台，並且Yd懸掛設置於設置在G1上的Xd，所以雖然不能直接調整Yr與Yd的平行度，但是能夠如上所述一步一步地以[μrad]數量級進行Yr與Yd的平行度的調整。另外，由於以所述1）至6）的順序按照調整步驟，平行度（垂直度）的誤差累積，所以理想的是以將初期階段的容許偏差量抑制為盡可能小的方式進行調整。此外，所述1）至6）的調整步驟雖然記載了XY平面的各台的平行度和垂直度的調整，但是也需要進行其它軸（X軸和Y軸）的調整。Since the stone platform 1 (G1) and the stone platform 2 independently support each platform, and Yd is suspended from Xd provided on G1, although the parallelism of Yr and Yd cannot be directly adjusted, it can be adjusted step by step as described above. Adjust the parallelism of Yr and Yd on the order of [μrad]. In addition, since errors in parallelism (perpendicularity) are accumulated by following the adjustment steps in the order of 1) to 6), it is ideal to perform the adjustment in such a way that the allowable deviation amount in the initial stage is suppressed as small as possible. In addition, although the adjustment steps 1) to 6) described above describe the adjustment of the parallelism and perpendicularity of each stage in the XY plane, adjustment of other axes (X-axis and Y-axis) is also required.

接著，參照圖9A至9C，說明本實施例1的轉移時的供體基板和受體基板的掃描。在此，圖9A至9C的俯視是操作者位於這些圖的左側且供體基板（D）和受體基板（R）相對於該操作者沿前後進行掃描的圖。Next, scanning of the donor substrate and the acceptor substrate during transfer in Example 1 will be described with reference to FIGS. 9A to 9C . Here, the top view of FIGS. 9A to 9C is a view in which the operator is located on the left side of these figures and the donor substrate (D) and the acceptor substrate (R) are scanned in the front and rear directions with respect to the operator.

首先，在供體基板的整個表面上測量吸附並設置在供體台的θ軸（θd）上的供體基板的彎曲量，並將其與位置資訊一起作為二維資料進行製圖。該資訊用作與在轉移工序中移動的供體台的X軸（Xd）和Y軸（Yd）對應的受體台的Z軸（Zr）的修正量。First, the bending amount of the donor substrate adsorbed and placed on the θ axis (θd) of the donor stage is measured over the entire surface of the donor substrate, and mapped together with the position information as two-dimensional data. This information is used as a correction amount for the Z-axis (Zr) of the recipient table corresponding to the X-axis (Xd) and Y-axis (Yd) of the donor table that moves in the transfer process.

此外，在以下的說明中，為了便於說明，把從操作者觀察時受體基板（R）和供體基板（D）的左邊眼前側的規定位置定義為各基板的原點。此外，將向受體基板的原點照射鐳射時的光學台（Xo）和受體台（Yr、θr）的位置分別定義為原點。此外，在供體基板中，將所述鐳射（LS）照射時的供體台（Xd、Yd、θd）的位置也定義為各自的原點。但是，各台的原點並不限定於其行程範圍的一端，是用於此後的轉移工序和基板的取下而留出移動的行程部分的位置。In addition, in the following description, for convenience of explanation, a predetermined position in front of the left eye of the receptor substrate (R) and the donor substrate (D) when viewed from the operator is defined as the origin of each substrate. In addition, the positions of the optical table (Xo) and the receptor table (Yr, θr) when the laser is irradiated to the origin of the receptor substrate are respectively defined as the origin. In addition, in the donor substrate, the positions of the donor stage (Xd, Yd, θd) during the laser (LS) irradiation are also defined as respective origins. However, the origin of each stage is not limited to one end of its stroke range, but is the position of the stroke portion left for subsequent transfer steps and removal of the substrate.

圖9A表示向位於原點位置的供體基板（D）和受體基板（R）照射鐳射（LS）的最初脈衝的情況。在此，圖示了側視（側視圖）和俯視（俯視圖）兩者。單點劃線表示鐳射通過縮小投影光學系統向對象物（S）照射的情況，接受了該照射的10×10[μm]的區域的光吸收層（省略圖示）吸收鐳射，消融（ablation）並產生衝擊波，由此相同區域的對象物被轉移到對置的受體基板上。圖示的對象物雖然是三個，但是在本實施例1的情況下，合計300個對象物一次向受體基板轉移。FIG. 9A shows a situation in which the first pulse of laser (LS) is irradiated to the donor substrate (D) and the acceptor substrate (R) located at the origin position. Here, both a side view (side view) and a top view (top view) are illustrated. The one-dot chain line indicates that the laser is irradiated to the object (S) through the reduction projection optical system, and the light-absorbing layer (not shown) in the 10 × 10 [μm] area that received the irradiation absorbs the laser and ablates it. A shock wave is generated, whereby objects in the same area are transferred to the opposite receptor substrate. Although the number of objects shown in the figure is three, in the case of Example 1, a total of 300 objects are transferred to the receptor substrate at one time.

在本實施例1中，鐳射裝置以200[Hz]振盪，此外，由於通過一次照射進行轉移，所以受體台（Yr）到下次的照射位置為止不使受體基板停止地以速度6[mm/s]向－Y方向進行掃描。In the present Example 1, the laser device oscillates at 200 [Hz], and since the transfer is performed by one irradiation, the receptor stage (Yr) moves at a speed of 6 [Hz] without stopping the receptor substrate until the next irradiation position. mm/s] to scan in the -Y direction.

另一方面，供體台的Y軸（Yd）在實現與所述受體台的Y軸（Yr）的位置的同步的同時，不使供體基板停止地以速度3[mm/s]朝向相同的－Y方向進行掃描。即，Yd與Yr的移動速度比（齒輪比（gear ratio））是1：2。圖9B表示各基板移動後的第二次照射的情況。On the other hand, the Y-axis (Yd) of the donor stage is synchronized with the position of the Y-axis (Yr) of the acceptor stage, and moves at a speed of 3 [mm/s] without stopping the donor substrate. Scan in the same -Y direction. That is, the moving speed ratio (gear ratio) of Yd and Yr is 1:2. FIG. 9B shows the second irradiation after each substrate has been moved.

以Yr為基準（主（master））並將Yd作為從屬（從（slave）），使用台系統的齒輪指令，通過使兩個台進行齒輪模式同步動作來進行Yr與Yd的位置的同步。在控制系統中使用可程式設計的多軸控制裝置。With Yr as the reference (master) and Yd as the slave (slave), the positions of Yr and Yd are synchronized by using the gear command of the stage system to synchronize the positions of Yr and Yd by causing the two stages to perform gear pattern synchronization operations. Use programmable multi-axis control devices in the control system.

此外，為了確定所述齒輪指令的齒輪比，使用由鐳射干涉計測量的台位置的實際測量值。安裝角錐稜鏡（Ic），將波長632.8[nm]的氦氖 (He-Ne)鐳射（IL）和受光部（圖5A中省略圖示）設置在石平臺2（或同等的不動位置）上，所述角錐稜鏡（Ic）與Yr的移動台一起移動且在受體基板的附近構成鐳射干涉計。同樣地，在Yd的移動台側面安裝角錐稜鏡，將干涉計用鐳射和受光部（圖5B中省略圖示）設置在Xd上。由此，實現各台的準確的位置同步。Furthermore, to determine the gear ratio of the gear command, actual measurements of the stage position measured by a laser interferometer are used. Install the pyramidal lens (Ic), and set the helium-neon (He-Ne) laser (IL) with a wavelength of 632.8 [nm] and the light-receiving part (not shown in Figure 5A) on the stone platform 2 (or an equivalent fixed position) , the pyramid cube (Ic) moves together with the moving stage of Yr and forms a laser interferometer near the receptor substrate. Similarly, a pyramid mirror is installed on the side of the moving stage of Yd, and the interferometer laser and light receiving unit (not shown in FIG. 5B ) are installed on Xd. This enables accurate position synchronization of each station.

如上所述，各台在原點的位置以已經成為穩定的等速度運動的方式從原點的眼前一側的位置開始加速。在該加速時間內和台到達原點為止的時間內，需要切斷雷射脈衝，以使鐳射不向供體基板照射。因此，從可程式設計的多軸控制裝置以高精度向鐳射裝置發送外部振盪觸發信號或高速光閘的動作開始觸發信號以及台驅動信號。As described above, the position of each stage at the origin starts to accelerate from the position in front of the origin in such a manner that it moves at a stable constant speed. During this acceleration time and the time until the stage reaches the origin, the laser pulse needs to be cut off so that the laser does not irradiate the donor substrate. Therefore, the programmable multi-axis control device sends an external oscillation trigger signal or a high-speed shutter action start trigger signal and a stage drive signal to the laser device with high precision.

此外，圖9C表示第三次照射的情況。從圖中可以看出如下情況：相對於供體基板（D）的移動距離，受體基板（R）的移動距離是兩倍。此後也同樣，受體基板和供體基板繼續移動。In addition, FIG. 9C shows the situation of the third irradiation. It can be seen from the figure that the acceptor substrate (R) moves twice as far as the donor substrate (D). Thereafter, the acceptor substrate and the donor substrate continue to move in the same manner.

當供體基板向－Y方向掃描180[mm]並結束時，同樣地當受體基板向－Y方向掃描360[mm]並結束時，鐳射裝置的振盪暫時停止，或者用高速光閘切斷鐳射的照射。通過該距離的掃描，沿X軸方向排列300個的對象物沿受體基板的Y軸方向被轉移12000行合計360萬個。圖10表示該情況。When the donor substrate scans 180 [mm] in the -Y direction and ends, and similarly when the acceptor substrate scans 360 [mm] in the -Y direction and ends, the oscillation of the laser device is temporarily stopped, or is cut off by a high-speed shutter. Laser irradiation. By scanning at this distance, 300 objects arranged in the X-axis direction are transferred along the Y-axis direction of the receptor substrate in 12,000 rows, totaling 3.6 million objects. Figure 10 shows this situation.

在所述停止時間內，受體台的Y軸（Yr）和供體台的Y軸（Yd）都返回原點。（但是考慮下次掃描的加速距離。以下相同）另一方面，供體台的X軸（Xd）與之前的原點相比返回到－9[mm]的位置。此外，從新的區域開始再次開始轉移工序。以下，反復進行上述動作。During the stop time, both the Y-axis (Yr) of the acceptor table and the Y-axis (Yd) of the donor table return to the origin. (However, consider the acceleration distance for the next scan. The same applies to the following.) On the other hand, the X-axis (Xd) of the donor table returns to the position of -9 [mm] compared to the previous origin. In addition, the transfer process is started again from the new area. Hereafter, the above operation is repeated.

圖11表示在Xd的－9[mm]×20次的步驟（step）移動結束後，這次從之前的原點（用虛線圖示）向－X方向返回到15[μm]的位置（用實線圖示），將該點作為新的原點並開始同樣的動作之前的情況。此後，反復進行兩個台的Y軸掃描（180[mm]（Yd）和360[mm]（Yr））與Xd的－9[mm]×20次的步驟操作。由此，在最初的Xd的180[mm]掃描（－9[mm]的20次步驟移動）期間向未受到鐳射的照射的區域（圖中用單點劃線圖示了下次的鐳射（LS）的照射預定區域）照射鐳射，能夠不浪費且更多地向受體基板轉移供體基板上的對象物。Figure 11 shows that after the movement of -9 [mm] × 20 steps of (line diagram), use this point as the new origin and start the same action. After that, the steps of Y-axis scanning (180 [mm] (Yd) and 360 [mm] (Yr)) and Xd of -9 [mm] × 20 times are repeated for the two stages. As a result, during the first 180 [mm] scan of LS) irradiates the laser to the planned irradiation area), so that more objects on the donor substrate can be transferred to the acceptor substrate without waste.

另外，大約的加工時間是360[mm]/6[mm/s]×40[次]＝2400[s]。另外，在該時間中不包含受體台的Y軸（Yr）移動其加減速所需要的距離的時間和每次Y軸掃描到返回到原點為止的時間。此外，通過將準分子雷射器的重複頻率提高到1[kHz]，上述加工時間能夠縮短1/5。In addition, the approximate processing time is 360[mm]/6[mm/s]×40[times]=2400[s]. In addition, this time does not include the time for the Y-axis (Yr) of the receptor platform to move the distance required for acceleration and deceleration and the time for each Y-axis scan to return to the origin. In addition, by increasing the repetition frequency of the excimer laser to 1 [kHz], the above-mentioned processing time can be shortened by 1/5.

圖12表示通過本實施例1的裝置結構，以同步並進的方式將受體台的Y軸（Yr）作為基準（主），以移動速度150[mm/s] 使受體台移動400[mm]的距離，且將供體台的Y軸（Yd）作為從屬，（從）以移動速度75[mm/s] 使供體台移動200[mm]的距離的情況下，兩個台的同步位置誤差。具體地說，將橫軸作為與受體台的移動速度對應的經過時間描繪了誤差量（δYr）與誤差量（δYd）的差（ΔYdr＝δYd－δYr），所述誤差量（δYr）是在作為基準（主）的Yr上從其線性編碼器得到的位置資訊與通過鐳射干涉計測量到的位置資訊的誤差量，所述誤差量（δYd）是在作為以上述1/2的速度同步移動的從屬（從）的Yd上從其線性編碼器得到的位置資訊與通過鐳射干涉計測量到的位置資訊的誤差量。從其結果可以看出，在400mm的移動距離內達成了±1[μm]以內的位置同步精度。Figure 12 shows the structure of the device according to the first embodiment. The Y-axis (Yr) of the receptor table is used as the reference (main) in a synchronous manner, and the receptor table is moved 400 [mm] at a moving speed of 150 [mm/s]. ] distance, and using the Y-axis (Yd) of the donor stage as a slave, (slave) moves the donor stage a distance of 200 [mm] at a moving speed of 75 [mm/s], the synchronization of the two stages position error. Specifically, the difference (ΔYdr=δYd−δYr) between the error amount (δYr) and the error amount (δYd), which is plotted on the horizontal axis as the elapsed time corresponding to the moving speed of the receptor table, is plotted. The error amount (δYd) between the position information obtained from its linear encoder and the position information measured by the laser interferometer on Yr as the reference (main) is synchronized at the above-mentioned 1/2 speed The amount of error between the position information obtained from its linear encoder on the moving slave (slave) Yd and the position information measured by the laser interferometer. As can be seen from the results, position synchronization accuracy within ±1 [μm] was achieved within a movement distance of 400 mm.

如上所述，本實施例1的對象物向受體基板的轉移圖案（pattern）是以間隔30[μm] 將10×10[μm]以矩陣狀進行轉移，但是例如如果將該間隔設為60[μm]，則能夠用一個供體基板進行四個受體基板的轉移。As described above, the transfer pattern of the object to the receptor substrate in Example 1 is 10 × 10 [μm] transferred in a matrix with an interval of 30 [μm]. However, if the interval is set to 60, for example [μm], one donor substrate can be used to transfer four acceptor substrates.

[實施例2][Example 2]

在本實施例2中與實施例1中供體基板表面上的對象物是一片的層狀態不同，是如下的實施例：將在相同尺寸為200×200[mm]的供體基板上形成為矩陣狀的、一個形狀為10×10[μm]、間隔為15[μm]的合計144百萬個的對象物，以供體基板的1/2的密度即以30[μm]的間隔且以相同的矩陣狀向尺寸為400×400[mm]的受體基板轉移。This Example 2 is different from the layer state in which the object on the surface of the donor substrate is one piece in Example 1, and is the following example: a donor substrate with the same size of 200 × 200 [mm] is formed into A total of 144 million objects in a matrix shape with a shape of 10 × 10 [μm] and an interval of 15 [μm], with a density of 1/2 of the donor substrate, that is, an interval of 30 [μm] and an interval of 15 [μm]. The same matrix shape was transferred to a receptor substrate with dimensions of 400 × 400 [mm].

最終，向受體基板轉移的對象物的配置情況與實施例1相同，但是不同點在於，在本實施例2中，預先在供體基板上也以兩倍的密度同樣配置有對象物，並且將其以±1[μm]的位置精度向受體基板上轉移。此外，在該情況下，與實施例1相比，進一步嚴格要求供體台的Y軸（Yd）和受體台的Y軸（Yr）的位置同步精度。Finally, the arrangement of the objects transferred to the acceptor substrate is the same as in Example 1, but the difference is that in this Example 2, the objects are also arranged on the donor substrate in advance at twice the density, and It is transferred to the acceptor substrate with a positional accuracy of ±1[μm]. In addition, in this case, compared with Example 1, the positional synchronization accuracy of the Y-axis (Yd) of the donor table and the Y-axis (Yr) of the recipient table is required to be more stringent.

在圖13A至圖13C中表示與實施例1同樣，在位於原點位置的供體基板（D）和受體基板（R）上從照射鐳射（LS）的最初的脈衝的情況到第三次照射的情況。13A to 13C show the steps from the first pulse of the laser (LS) to the third irradiation of the donor substrate (D) and the acceptor substrate (R) at the origin position in the same manner as in Example 1. irradiation conditions.

[實施例3][Example 3]

在本實施例3中，將供體基板表面上的對象物向受體基板轉移的方法與實施例1或實施例2相同。另一方面，各台的Y軸彼此的平行度和X軸彼此的平行度、以及各Y軸與X軸的垂直度的調整方法與所述實施例不同。即，實施例1中記載的調整方法如下：為了調整受體台的Y軸（Yr）與供體台的Y軸（Yd）的平行度，進行所述1）至6）的調整步驟，相對於此，在本實施例3中，在調整步驟早期階段調整上述Yr與Yd的平行度。In this Embodiment 3, the method of transferring the object on the surface of the donor substrate to the acceptor substrate is the same as that in Embodiment 1 or 2. On the other hand, the adjustment method of the parallelism of the Y-axis and the X-axis of each stage and the perpendicularity of the Y-axis and the X-axis is different from the above-mentioned embodiment. That is, the adjustment method described in Example 1 is as follows: in order to adjust the parallelism between the Y-axis (Yr) of the recipient table and the Y-axis (Yd) of the donor table, the adjustment steps 1) to 6) are performed. Here, in the third embodiment, the parallelism between Yr and Yd is adjusted in the early stage of the adjustment step.

1）Yr、θr、Zr的直線度1) Straightness of Yr, θr, Zr

該調整步驟是作為與所述實施例1和實施例2共通的前提的調整步驟。使用鐳射干涉計等調整設置在石平臺2（G2）上的受體台的Y軸（Yr）和設置在其上的θ軸（θr）、以及同樣的Z軸（Zr）和受體基板的支架的直線度（相對於作為將水平面作為XY平面時的鉛垂方向的Z軸的直線度）。另外，基本上在該調整後，未進行有可能影響受體台組的垂直度的調整，其它台的調整全部以上述受體台組的例如其最上表面為基準進行。This adjustment step is an adjustment step that is a premise common to the first and second embodiments. Use a laser interferometer or the like to adjust the Y-axis (Yr) of the receptor platform installed on the stone platform 2 (G2) and the θ-axis (θr) installed thereon, as well as the Z-axis (Zr) and the receptor substrate. Straightness of the bracket (straightness with respect to the Z-axis, which is the vertical direction when the horizontal plane is regarded as the XY plane). In addition, basically after this adjustment, no adjustment that may affect the verticality of the receptor table group is performed, and all other table adjustments are performed based on, for example, the uppermost surface of the receptor table group.

2）Yr與AR（Y）的平行度（Yr與AR（X）的垂直度）2) Parallelism between Yr and AR (Y) (perpendicularity between Yr and AR (X))

與實施例1的調整步驟1）同樣，調整受體台的Y軸（Yr）與調整基板AR上的對準線Y的平行度。由此，也調整了Yr與對準線X的垂直度。另外，在不使用調整基板AR而使用在Yr上進行直接描繪等而得到的對準線或對準標記的情況下，可以省略該調整步驟1）。Similar to the adjustment step 1) of Example 1, the parallelism between the Y-axis (Yr) of the receptor table and the alignment line Y on the adjustment substrate AR is adjusted. Thus, the perpendicularity between Yr and the alignment line X is also adjusted. In addition, if the adjustment substrate AR is not used and an alignment line or an alignment mark obtained by drawing directly on Yr is used, this adjustment step 1) may be omitted.

3）AR（X）與Xd的平行度（Yr與Xd的垂直度）3) Parallelism between AR (X) and Xd (perpendicularity between Yr and Xd)

接著，通過設置於放置在供體台的X軸（Xd）上的光學台（Xo）的高倍率CCD照相機觀察調整基板AR的對準線X。上述高倍率CCD照相機的Z軸方向的位置是由投影光學系統的設計決定的，但是在本實施例3中，使用保持投影透鏡的Z軸台（Zl）固定在投影透鏡（Pl）的位置附近。使Xd移動400[mm]，以對準線X的Y軸方向的偏差量在0.3[μm]以內的方式使用轉動調整機構調整Xd相對於石平臺1的安裝角度亦即Xd相對於Yr的垂直度。Next, the alignment line X of the adjustment substrate AR is observed with a high-magnification CCD camera installed on an optical table (Xo) placed on the X-axis (Xd) of the donor table. The position of the above-mentioned high-magnification CCD camera in the Z-axis direction is determined by the design of the projection optical system. However, in this embodiment 3, a Z-axis stage (Zl) that holds the projection lens is used and is fixed near the position of the projection lens (Pl). . Move Xd 400 [mm], and use the rotation adjustment mechanism to adjust the installation angle of Xd relative to the stone platform 1 so that the deviation in the Y-axis direction of the alignment line Spend.

4）Yr與Yd的YZ平面內的平行度4) Parallelism of Yr and Yd in the YZ plane

在實施例1的記載中，省略了其它軸系（X軸和Y軸）的調整步驟的記載，在此，簡單說明X軸系亦即YZ平面內的平行度的調整步驟。使用設置在受體台的Z軸（Zr）或其它部位上的高度感測器觀察供體台的Y軸（Yd）的下表面。使Yr與Yd同時同步移動（並行移動）200[mm]以上的相同距離，觀察間隙感測器的測量值（Zr與Yd的距離）的變化。以使該變化在5[μm]以內或與投影透鏡的成像的焦點深度相比在足夠小的範圍內的方式，將墊板***設置在Xd與Yd間的轉動調整機構和、Yd或Xd之間，調整Yr與Yd間的YZ平面內的平行度。In the description of Embodiment 1, the description of the adjustment procedures of the other axis systems (X-axis and Y-axis) is omitted. Here, the adjustment procedures of the parallelism in the X-axis system, that is, the YZ plane, are briefly explained. Observe the lower surface of the Y-axis (Yd) of the donor table using a height sensor installed on the Z-axis (Zr) or other parts of the recipient table. Make Yr and Yd move synchronously (move in parallel) by the same distance of more than 200 [mm], and observe the change in the measured value of the gap sensor (the distance between Zr and Yd). Insert the backing plate between the rotation adjustment mechanism provided between Xd and Yd and Yd or between Yr and Yd to adjust the parallelism in the YZ plane.

5）Yr與Yd的平行度5) Parallelism between Yr and Yd

使用設置在Zr或其它部位的高倍率CCD照相機，觀察設置在Yd的下表面上的圖案匹配用的對準標記。在使Yr與Yd同步移動（並行移動）相同距離、圖案匹配的對準標記圖像（十字標記等）的位置沿X軸方向移動的情況下，使用設置在Xd與Yd間的轉動調整機構進行調整，以對其進行修正。另外，代替對準標記，也可以使用安裝在供體台的Y軸上的調整基板AD的對準線Y。Use a high-magnification CCD camera installed on Zr or other locations to observe the alignment marks for pattern matching provided on the lower surface of Yd. When moving Yr and Yd synchronously (moving in parallel) by the same distance and matching the pattern of the alignment mark image (cross mark, etc.) in the X-axis direction, a rotation adjustment mechanism provided between Xd and Yd is used. Adjust to correct it. In addition, instead of the alignment mark, the alignment line Y of the adjustment substrate AD mounted on the Y-axis of the donor stage may be used.

6）Yr與Xo的垂直度6) Perpendicularity between Yr and Xo

通過設置在光學台（Xo）上的高倍率CCD照相機，觀察通過所述調整步驟1）調整了與受體台的Y軸（Yr）的垂直度的調整基板AR的對準線X。使Xo移動400[mm]，以使對準線X的Y軸方向的偏差量在0.3[μm]以內的方式，使用設置在兩者間的轉動調整機構調整Xo相對於Xd的安裝角度。The alignment line X of the adjustment substrate AR whose perpendicularity to the Y-axis (Yr) of the receptor table has been adjusted in the adjustment step 1) is observed through a high-magnification CCD camera installed on the optical table (Xo). Move Xo 400 [mm] so that the deviation amount of the alignment line X in the Y-axis direction is within 0.3 [μm], and adjust the installation angle of Xo relative to Xd using a rotation adjustment mechanism provided between the two.

[實施例4][Example 4]

圖2A表示本實施例4的轉移裝置的主要結構部分。是將本發明中的第七發明作為基本結構的實施例。另外，在圖2A至2C中，省略了鐳射裝置、控制裝置和其它監視器等的圖示（這些全部與實施例1相同），圖中表示了X軸、Y軸和Z軸方向。此外，在本實施例4中使用的供體基板、受體基板、以及轉移對象物的供體基板上的配置和向受體基板轉移後的配置與實施例2相同。FIG. 2A shows the main structural parts of the transfer device according to the fourth embodiment. This is an embodiment using the seventh aspect of the present invention as a basic structure. In addition, in FIGS. 2A to 2C , illustrations of the laser device, control device, other monitors, etc. (all of which are the same as those in Embodiment 1) are omitted, and the X-axis, Y-axis, and Z-axis directions are shown in the figures. In addition, the arrangement of the donor substrate, the acceptor substrate, and the transfer object on the donor substrate and the arrangement after transfer to the acceptor substrate used in Example 4 are the same as those in Example 2.

脈衝鐳射從準分子雷射器裝置射出並照射到供體基板上的轉移對象物為止的光學系統的情況如以下所記載的，除了因分別由圖1A和圖2A所示的各台組的構建的不同而產生的部分以外，與實施例1相同。即，在圖1A至1C所示的第六發明的轉移裝置的情況下，在石平臺1（G1）上依次配置供體台的X軸（Xd）並在其上配置光學台（Xo），相對於此，在圖2A至2C所示的第七發明的轉移裝置的情況下，這些台組的構建的不同點在於：在G1上放置Xo且在G1的下方懸掛設置Xd。The optical system until the pulsed laser is emitted from the excimer laser device and irradiates the transfer object on the donor substrate is as follows. Except for the construction of each stage group shown in FIG. 1A and FIG. 2A , the optical system is as follows. It is the same as Example 1 except for the parts caused by differences. That is, in the case of the transfer device of the sixth invention shown in FIGS. 1A to 1C , the X-axis (Xd) of the donor table is sequentially arranged on the stone platform 1 (G1) and the optical table (Xo) is arranged thereon, On the other hand, in the case of the transfer device of the seventh invention shown in FIGS. 2A to 2C , the construction of these sets differs in that Xo is placed on G1 and Xd is suspended below G1.

來自準分子雷射器的射出光射入望遠鏡光學系統，並向其前方的整形光學系統傳播。如圖2A所示，上述整形光學系統在沿X軸方向移動的光學台（Xo）上設置成與其光軸平行。此外，Xo放置在花崗岩製的石平臺1（G1）上，在兩者間具有轉動調整機構（RP）。在此，Xo與放置在與G1不同的石平臺2（G2）上的受體台的Y軸（Yr）成直角，並與供體台的X軸（Xd）平行。另外，射入整形光學系統之前的鐳射由望遠鏡光學系統調整成與Xo的移動無關的大體相同的形狀（大體25×25[mm]（縱×橫，FWHM））。The emitted light from the excimer laser enters the telescope optical system and propagates toward the shaping optical system in front of it. As shown in FIG. 2A , the above-described shaping optical system is installed parallel to its optical axis on an optical table (Xo) that moves in the X-axis direction. In addition, Xo is placed on a granite stone platform 1 (G1), with a rotation adjustment mechanism (RP) between them. Here, Xo is at right angles to the Y-axis (Yr) of the recipient table placed on a stone platform 2 (G2) different from G1, and parallel to the X-axis (Xd) of the donor table. In addition, the laser beam before entering the shaping optical system is adjusted by the telescope optical system to have approximately the same shape (approximately 25 × 25 [mm] (length × width, FWHM)) regardless of the movement of Xo.

供體台的X軸（Xd）懸掛設置在G1的下方，還懸掛設置有供體台的Y軸（Yd）。此外，在它們之間具有轉動調整機構。在圖2B中通過側視表示Xo和Xd相對於G1移動相同距離的情況。由此，能夠不改變Xo和Xd的X軸上的相對位置地改變相對於Yd的X軸方向的位置。此外，在圖2C中通過側視表示僅Xo相對於G1移動的情況。由此，能夠改變Xd和Xo的X軸上的相對位置。The X-axis (Xd) of the donor table is suspended below G1, and the Y-axis (Yd) of the donor table is also suspended. In addition, there is a rotation adjustment mechanism between them. In FIG. 2B , the side view shows the case where Xo and Xd move the same distance relative to G1. Thereby, the position of Xo and Xd in the X-axis direction with respect to Yd can be changed without changing the relative position of Xo and Xd on the X-axis. In addition, in FIG. 2C , a side view shows a case where only Xo moves relative to G1 . Thereby, the relative positions of Xd and Xo on the X-axis can be changed.

作為其它縮小投影光學系統的場鏡（F）、光罩（M）和投影透鏡（Pl）的詳細情況與實施例1相同，從投影透鏡射出的鐳射從供體基板的背面射入，並以描繪在所述光罩上的圖案的1/5的縮小尺寸，準確地朝向形成在其表面（下表面）上的轉移對象物投影。此外，供體基板表面上的成像的情況與實施例1同樣，由共焦點光束輪廓儀進行。The details of the field lens (F), the mask (M) and the projection lens (Pl) as other reduction projection optical systems are the same as those in Embodiment 1. The laser emitted from the projection lens is incident from the back surface of the donor substrate, and is A reduced size of 1/5 of the pattern drawn on the mask is accurately projected toward the transfer object formed on the surface (lower surface) thereof. In addition, imaging on the surface of the donor substrate was performed with a confocal beam profiler in the same manner as in Example 1.

基於以如上所述的方式向配置在供體基板的表面上的轉移對象物進行縮小投影的光罩圖案，當將該轉移對象物向對置的受體基板轉移時，供體基板和受體基板以何種方式進行掃描、轉移對象物以何種方式向受體基板上轉移與圖6、圖10、圖11和圖13A至13C相同，此外，受體台的Y軸（Yr）和供體台的Y軸（Yd）的移動的位置同步精度與實施例1中所述的圖12相同。Based on the mask pattern that reduces the projection of the transfer object arranged on the surface of the donor substrate as described above, when the transfer object is transferred to the opposite acceptor substrate, the donor substrate and the acceptor How the substrate is scanned and how the transfer object is transferred to the receptor substrate are the same as in Figures 6, 10, 11 and 13A to 13C. In addition, the Y-axis (Yr) of the receptor stage and the supply The position synchronization accuracy of the movement of the Y-axis (Yd) of the body table is the same as that shown in FIG. 12 described in Embodiment 1.

此外，各台的Y軸彼此的平行度和X軸彼此的平行度、以及各Y軸和X軸的垂直度的調整方法與實施例3相同。即，將進行了直線度調整的受體台的Y軸（Yr）作為調整的基準，通過固定在受體台的Z軸（Zr）上的高倍率CCD照相機觀察Yr與從石平臺1（G1）懸掛設置的供體台的X軸（Xd）的垂直度，並通過G1和Xd間的轉動調整機構（RP）進行調整。此外，通過相同的高倍率CCD照相機觀察懸掛設置於調整後的Xd上的供體台的Y軸（Yd）與Yr的平行度，並通過Xd和Yd間的RP進行調整。最後，通過與Xo一起移動的高倍率CCD觀察光學台（Xo）與Yr的垂直度，並通過G1與Xo間的RP進行調整。In addition, the method for adjusting the parallelism between the Y axes and the parallelism between the X axes of each stage and the perpendicularity between the Y axes and the X axes is the same as in the third embodiment. That is, the Y-axis (Yr) of the receptor table with straightness adjustment is used as the adjustment standard, and the relationship between Yr and the slave platform 1 (G1) is observed through a high-magnification CCD camera fixed on the Z-axis (Zr) of the receptor table. ) The verticality of the X-axis (Xd) of the suspended donor table is adjusted by the rotation adjustment mechanism (RP) between G1 and Xd. In addition, the parallelism between the Y axis (Yd) and Yr of the donor table suspended on the adjusted Xd was observed with the same high-magnification CCD camera, and adjusted by the RP between Xd and Yd. Finally, the perpendicularity of the optical table (Xo) and Yr is observed through the high-magnification CCD that moves together with Xo, and adjusted through the RP between G1 and Xo.

[工業實用性][Industrial Applicability]

本發明能夠作為顯示器的製造裝置進行利用。The present invention can be utilized as a display manufacturing device.

1平臺 2平臺 3平臺 11平臺 12平臺 AD 供體台用調整用基板 AR 受體台用調整用基板 BP 共焦點光束輪廓儀 CCD 高倍率照相機 D 供體基板 F 場鏡 G 基礎平臺 G1 平臺1 G11 平台11 G12 平台12 G2 平台2 G3 平台3 H 整形光學系統 Ic 鐳射干涉計用角錐棱鏡 IL 鐳射干涉計用鐳射 LS 鐳射 M 光罩 Pl 投影透鏡 R 受體基板 RP 轉動調整機構 S 對象物 TE 望遠鏡 Xd 供體台的X軸 Xo 光學台（X軸） Yd 供體台的Y軸 Yl 投影透鏡和照相機的切換台 Yr 受體台的Y軸 Zl 投影透鏡的Z軸台 Zr 受體台的Z軸 θd 供體台的θ軸 θr 受體台的θ軸 1 platform 2 platforms 3 platforms 11 platforms 12 platforms AD Adjustment base plate for donor table Adjustment substrate for AR receptor table BP Confocal Beam Profiler CCD high magnification camera D Donor substrate F field lens G basic platform G1 Platform 1 G11 Platform 11 G12 Platform 12 G2 Platform 2 G3 Platform 3 H shaping optical system Ic Corner prism for laser interferometer IL laser for laser interferometer LS laser M mask Pl projection lens R receptor substrate RP rotation adjustment mechanism S object TE telescope Xd X-axis of donor table Xo optical table (X axis) Yd Y axis of donor table Yl projection lens and camera switcher Yr Y-axis of the receptor platform Zl Z axis stage of projection lens Zr Z axis of the receptor platform θd θ axis of donor table θr θ axis of the receptor platform

圖1A表示本發明的轉移裝置的主要結構部分（側視圖）。（第二發明） 圖1B表示供體台的X軸在放置上光學台並從圖1A的狀態移動了的情況（側視圖）。 圖1C表示光學台從圖1B的狀態在供體台的X軸上移動了的情況（側視圖）。 圖1D是圖1C的俯視圖。 圖2A表示本發明的轉移裝置的主要結構部分（側視圖）。（第三發明） 圖2B表示供體台的X軸和光學台從圖2A的狀態在平臺1上移動了相同距離的情況（側視圖）。 圖2C表示僅光學台的X軸從圖2B的狀態在平臺1上移動了的情況（側視圖）。 圖3A表示用於G1和Xd之間的轉動調整機構的例子。 圖3B表示用於Xd和Yd之間的轉動調整機構的例子。 圖3C表示用於Xd和Xo之間的轉動調整機構的例子。 圖4表示根據受體基板的尺寸供體台應移動的範圍。 圖5A表示設置有受體台的Y軸用鐳射干涉計的情況。 圖5B表示設置有供體台的Y軸用鐳射干涉計的情況。 圖6表示形成在光罩上的圖案的例子。 圖7表示利用多列光罩圖案的轉移工序的情況。 圖8表示共焦點光束輪廓儀的監測的情況。 圖9A表示轉移工序的第一次照射。 圖9B表示轉移工序的第二次照射。 圖9C表示轉移工序的第三次照射。 圖10表示通過齒輪比1：2掃描一次後的受體基板的情況。 圖11表示供體台的X軸的步進掃描的情況。 圖12表示使受體台的Y軸和供體台的Y軸並進時的同步位置錯誤。 圖13A表示使用矩陣狀的供體基板的轉移工序的第一次照射。 圖13B表示使用矩陣狀的供體基板的轉移工序的第二次照射。 圖13C表示使用矩陣狀的供體基板的轉移工序的第三次照射。 FIG. 1A shows the main structural parts of the transfer device of the present invention (side view). (Second invention) FIG. 1B shows a state where the X-axis of the donor table is placed on the optical table and moved from the state of FIG. 1A (side view). FIG. 1C shows a state where the optical table has moved on the X-axis of the donor table from the state of FIG. 1B (side view). Figure 1D is a top view of Figure 1C. FIG. 2A shows the main structural parts of the transfer device of the present invention (side view). (Third invention) FIG. 2B shows a case where the X-axis of the donor table and the optical table have moved the same distance on the stage 1 from the state of FIG. 2A (side view). FIG. 2C shows a state where only the X-axis of the optical table has moved on the stage 1 from the state of FIG. 2B (side view). Figure 3A shows an example of the rotation adjustment mechanism used between G1 and Xd. Figure 3B shows an example of a rotation adjustment mechanism for use between Xd and Yd. Figure 3C shows an example of a rotation adjustment mechanism for use between Xd and Xo. Figure 4 shows the range within which the donor stage should move depending on the size of the acceptor substrate. FIG. 5A shows a Y-axis laser interferometer equipped with a receptor stage. FIG. 5B shows a Y-axis laser interferometer equipped with a donor stage. FIG. 6 shows an example of a pattern formed on the photomask. FIG. 7 shows a case where a multi-row mask pattern transfer process is used. Figure 8 shows the monitoring situation of the confocal beam profiler. FIG. 9A shows the first irradiation in the transfer step. FIG. 9B shows the second irradiation in the transfer step. FIG. 9C shows the third irradiation in the transfer step. Figure 10 shows the situation of the receptor substrate after scanning once with a gear ratio of 1:2. FIG. 11 shows the step scanning of the X-axis of the donor table. Fig. 12 shows the synchronization position error when the Y-axis of the recipient table and the Y-axis of the donor table are moved in parallel. FIG. 13A shows the first irradiation in the transfer step using a matrix-shaped donor substrate. FIG. 13B shows the second irradiation in the transfer step using a matrix-shaped donor substrate. FIG. 13C shows the third irradiation in the transfer step using a matrix-shaped donor substrate.

BP:共焦點光束輪廓儀 BP: Confocal beam profiler

CCD:高倍率照相機 CCD: high magnification camera

D:供體基板 D: Donor substrate

F:場鏡 F: field lens

G:基礎平臺 G: basic platform

G1:平臺1 G1: Platform 1

G11:平台11 G11: Platform 11

G12:平台12 G12: Platform 12

G2:平台2 G2: Platform 2

H:整形光學系統 H: Shaping optical system

LS:鐳射 LS: Laser

M:光罩 M: photomask

Pl:投影透鏡 Pl: projection lens

R:受體基板 R: receptor substrate

TE:望遠鏡 TE: telescope

Xd:供體台的X軸 Xd: X-axis of donor table

Xo:光學台(X軸) Xo: Optical table (X axis)

Yd:供體台的Y軸 Yd: Y axis of donor table

Yl:投影透鏡和照相機的切換台 Yl: Projection lens and camera switcher

Yr:受體台的Y軸 Yr: Y-axis of the receptor platform

Zl:投影透鏡的Z軸台 Zl: Z axis stage of projection lens

Zr:受體台的Z軸 Zr: Z axis of the receptor platform

θd:供體台的θ軸 θd: θ axis of donor table

θr:受體台的θ軸 θr: θ axis of the receptor platform

Claims (19)

一種轉移方法，包括：將鐳射的光罩圖案從基板的背面向設置於所述基板的表面上的對象物縮小投影，使所述對象物自所述基板剝離，而將所述對象物轉移到其他基板。 A transfer method, including: shrinking and projecting a laser mask pattern from the back of a substrate to an object disposed on the surface of the substrate, peeling the object from the substrate, and transferring the object to other substrates. 如請求項1所述的轉移方法，其中移動所述基板與所述其他基板的相對位置。 The transfer method as claimed in claim 1, wherein the relative positions of the substrate and the other substrates are moved. 如請求項1所述的轉移方法，其中移動所述基板與照射在所述基板上的鐳射的光罩圖案的相對位置。 The transfer method as claimed in claim 1, wherein the relative position of the substrate and the mask pattern of the laser irradiated on the substrate is moved. 如請求項1所述的轉移方法，其中相對於照射在所述基板上的鐳射的光罩圖案，所述基板與所述其他基板以不同的速度移動。 The transfer method according to claim 1, wherein the substrate and the other substrate move at different speeds relative to the mask pattern of the laser irradiated on the substrate. 如請求項2至請求項4中任一項所述的轉移方法，其中在鐳射的向所述基板照射時停止所述移動。 The transfer method according to any one of claims 2 to 4, wherein the movement is stopped when the laser is irradiated to the substrate. 如請求項2至請求項4中任一項所述的轉移方法，其中在鐳射的向所述基板照射時不停止所述移動。 The transfer method according to any one of claims 2 to 4, wherein the movement is not stopped when the laser is irradiated to the substrate. 如請求項1至請求項4中任一項所述的轉移方法，其中所述基板對所述鐳射的波長具有透過特性。 The transfer method according to any one of claims 1 to 4, wherein the substrate has transmission characteristics for the wavelength of the laser. 如請求項1至請求項4中任一項所述的轉移方法，其中所述對象物是設置在形成於所述基板上的光吸收層上。 The transfer method according to any one of claims 1 to 4, wherein the object is disposed on a light absorbing layer formed on the substrate. 如請求項1至請求項4中任一項所述的轉移方法，其中所述對象物設置成作為所述基板上的固態膜。 The transfer method according to any one of claims 1 to 4, wherein the object is provided as a solid film on the substrate. 如請求項1至請求項4中任一項所述的轉移方法，其中所述對象物以矩陣狀設置在所述基板上。 The transfer method according to any one of claims 1 to 4, wherein the objects are arranged on the substrate in a matrix. 一種光罩，其為將鐳射的光罩圖案從基板的背面向設置於所述基板的表面上的對象物縮小投影，使所述對象物自所述基板剝離，而將所述對象物轉移到其他基板的轉移方法中所使用的光罩，其包括：透過鐳射的窗部分；以及遮擋鐳射的有顏色部分。 A photomask that shrinks and projects a laser mask pattern from the back of a substrate onto an object provided on the surface of the substrate, causing the object to peel off from the substrate, and transfer the object to The photomask used in other substrate transfer methods includes: a window part that transmits the laser; and a colored part that blocks the laser. 如請求項11所述的光罩，其中所述有顏色部分具有鋁蒸鍍或電介質多層膜。 The photomask according to claim 11, wherein the colored portion has aluminum evaporation or a dielectric multilayer film. 一種光罩，其為將鐳射的光罩圖案從基板的背面向設置於所述基板的表面上的對象物縮小投影，使所述對象物自所述基板剝離，而將所述對象物轉移到其他基板的轉移方法中所使用的光罩，其為通過鍍鉻在合成石英板上設置有圖案的光罩。 A photomask that shrinks and projects a laser mask pattern from the back of a substrate onto an object provided on the surface of the substrate, causing the object to peel off from the substrate, and transfer the object to A photomask used in other substrate transfer methods is a photomask in which a pattern is provided on a synthetic quartz plate by chromium plating. 一種光罩，其為將鐳射的光罩圖案從基板的背面向設置於所述基板的表面上的對象物縮小投影，使所述對象物自所述基板剝離，而將所述對象物轉移到其他基板的轉移方法中所使用的光罩，其包括：實施了鍍鉻的有顏色部分；以及未實施鍍鉻的窗部分。 A photomask that shrinks and projects a laser mask pattern from the back of a substrate onto an object provided on the surface of the substrate, causing the object to peel off from the substrate, and transfer the object to A photomask used in other substrate transfer methods includes: a colored portion with chromium plating; and a window portion without chromium plating. 如請求項13或請求項14所述的光罩，其中所述鍍鉻設置在所述鐳射的射出側。 The photomask according to claim 13 or claim 14, wherein the chrome plating is provided on the exit side of the laser. 如請求項13或請求項14所述的光罩，其中在所述鐳射的射入側設置有反射防止膜。 The photomask according to claim 13 or 14, wherein an anti-reflection film is provided on the incident side of the laser. 如請求項13或請求項14所述的光罩，其用於移動所述基板與所述其他基板的相對位置的轉移方法。 The photomask according to claim 13 or claim 14, which is used in a transfer method to move the relative position of the substrate and the other substrate. 如請求項17所述的光罩，其用於移動所述基板與照射在所述基板上的鐳射的光罩圖案的相對位置的轉移方法。 The photomask according to claim 17, which is a transfer method for moving the relative position of the substrate and the photomask pattern of the laser irradiated on the substrate. 如請求項11至請求項14中任一項所述的光罩，其用於相對於照射在所述基板上的鐳射的光罩圖案，所述基板與所述其他基板以不同的速度移動的轉移方法。 The mask according to any one of claims 11 to 14, which is used for moving the substrate and the other substrates at different speeds relative to the mask pattern of the laser irradiated on the substrate. transfer method.
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