TW202002358A - Lift device and method for using same - Google Patents
Lift device and method for using same Download PDFInfo
- Publication number
- TW202002358A TW202002358A TW107122157A TW107122157A TW202002358A TW 202002358 A TW202002358 A TW 202002358A TW 107122157 A TW107122157 A TW 107122157A TW 107122157 A TW107122157 A TW 107122157A TW 202002358 A TW202002358 A TW 202002358A
- Authority
- TW
- Taiwan
- Prior art keywords
- axis
- donor
- stage
- substrate
- transfer device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 50
- 239000000758 substrate Substances 0.000 claims abstract description 213
- 230000003287 optical effect Effects 0.000 claims abstract description 102
- 238000007493 shaping process Methods 0.000 claims abstract description 23
- 230000009467 reduction Effects 0.000 claims abstract description 7
- 238000012546 transfer Methods 0.000 claims description 95
- 230000007246 mechanism Effects 0.000 claims description 51
- 238000009434 installation Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 12
- 238000012937 correction Methods 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 claims description 2
- 230000008520 organization Effects 0.000 claims 1
- 238000000280 densification Methods 0.000 abstract 1
- 239000004575 stone Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 230000001360 synchronised effect Effects 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010438 granite Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Seal Device For Vehicle (AREA)
- Massaging Devices (AREA)
- Microwave Amplifiers (AREA)
- Paper (AREA)
Abstract
Description
本發明涉及一種裝置，該裝置使用鐳射照射而將位於供體基板上的對象物高精度地轉移到受體基板上（LIFT：Laser Induced Forward Transfer鐳射誘導向前轉移）。The present invention relates to a device that uses laser irradiation to transfer an object located on a donor substrate to an acceptor substrate with high accuracy (LIFT: Laser Induced Forward Transfer).
以往有一種技術，其向供體基板上的有機EL（電致發光）層照射鐳射並將其轉移到對置的電路基板上。作為該技術，在專利文獻1中公開了一種技術：將一個鐳射轉換為具有矩形形狀的強度分佈均勻的多個矩形鐳射，將它們串列且等間隔配置，以隔開一定時間以上且重疊規定次數的方式向供體基板的規定的區域照射多個矩形鐳射，使該鐳射被位於供體基板和有機EL層間的金屬箔吸收而產生彈性波，將由此剝離的有機EL層轉移到對置的電路基板上。There has been a technique in the past that irradiates the organic EL (electroluminescence) layer on the donor substrate with laser light and transfers it to the opposite circuit substrate. As this technique, Patent Document 1 discloses a technique of converting one laser into a plurality of rectangular lasers having a rectangular shape with a uniform intensity distribution, and arranging them in series at equal intervals so as to be separated by more than a certain time and overlapping regulations Multiple rectangular lasers are irradiated to a predetermined area of the donor substrate in a number of times, so that the laser is absorbed by the metal foil between the donor substrate and the organic EL layer to generate an elastic wave, and the peeled organic EL layer is transferred to the opposite On the circuit board.
在該技術中使用如下的結構：在供體基板和電路基板之間夾持將80～100[μm]作為適當值的間隔件，把將供體基板和電路基板的間隔保持為固定的狀態並一體化的構件放置在一個臺上，並使其相對於鐳射進行掃描。但是，在該情況下，除了另外需要使對置的供體基板和電路基板一體化的工序以外，還需要與電路基板尺寸相同的供體基板，並且伴隨電路基板的大型化的需要，需要增加製造成本和裝置的大型化。In this technique, the following structure is used: a spacer with 80 to 100 [μm] as an appropriate value is sandwiched between the donor substrate and the circuit substrate, and the distance between the donor substrate and the circuit substrate is maintained in a fixed state. The integrated component is placed on a stage and scanned relative to the laser. However, in this case, in addition to the step of integrating the opposed donor substrate and the circuit substrate, a donor substrate of the same size as the circuit substrate is required, and the need to increase the size of the circuit substrate needs to be increased. Manufacturing cost and large-scale equipment.
同樣，作為將供體基板上的有機EL層向對置的電路基板轉移的技術，在專利文獻2中公開了如下的技術：將光吸收層設置在供體基板和有機EL層之間，使該光吸收層吸收照射的鐳射而產生衝擊波，將供體基板上的有機EL層向設置有10～100[μm]的間隔並對置的電路基板轉移。但是，專利文獻2未公開鐳射的掃描方法和實現其的台結構，而且也未公開轉移裝置。因此，專利文獻2不能作為用於維持並提高能夠與電路基板的大型化對應的轉移位置精度的技術來進行參照。Similarly, as a technique for transferring the organic EL layer on the donor substrate to the opposite circuit substrate,
此外，在專利文獻3中公開了一種在用於半導體器件製造的曝光裝置中與步進掃描法相關的技術。其基本考慮方式如下：邊跳過中途的幾個照射區域邊間歇地對沿著晶片台的掃描曝光方向的一列照射區域進行曝光，並且在其中途不使晶片台停止。即，專利文獻3公開了一種曝光裝置，其包括：中間光罩台，保持中間光罩；晶片台，保持晶片；以及投影光學系統，將中間光罩的圖案向晶片投影，邊使中間光罩台和晶片台一起相對於投影光學系統掃描邊進行曝光，將中間光罩的圖案依次投影到晶片的多個照射區域，其中，邊不使所述晶片台靜止地使其掃描移動邊對沿掃描方向排列的晶片上的多個照射區域間歇地進行曝光。由此，在晶片的大型化且處理速度的高速化的要求下，與反復進行晶片台的加減速的步進重複（step and repeat）方式相比，能夠減輕伴隨台的掃描產生的振動和搖晃對曝光精度的影響。In addition, Patent Literature 3 discloses a technique related to a step-and-scan method in an exposure apparatus used for semiconductor device manufacturing. The basic way of thinking is as follows: a row of irradiation areas along the scanning exposure direction of the wafer table is intermittently exposed while skipping several irradiation areas on the way, and the wafer table is not stopped in the middle. That is, Patent Document 3 discloses an exposure apparatus including: an intermediate mask stage that holds an intermediate mask; a wafer stage that holds a wafer; and a projection optical system that projects the pattern of the intermediate mask onto the wafer while making the intermediate mask The stage and the wafer stage are exposed together with scanning with respect to the projection optical system, and the pattern of the intermediate mask is sequentially projected onto a plurality of irradiation areas of the wafer, wherein the edge stage is scanned without moving the wafer stage stationary A plurality of irradiation areas on the wafers arranged in directions are exposed intermittently. This makes it possible to reduce the vibration and shaking caused by the scanning of the stage, as compared with the step and repeat method in which the acceleration and deceleration of the wafer table are repeated under the requirements of increasing the size of the wafer and increasing the processing speed. Effect on exposure accuracy.
但是，上述專利文獻3中公開的技術是將縮小投影曝光作為基礎的半導體曝光裝置的技術，其技術領域與本發明的轉移技術不同。即，曝光裝置的中間光罩台和晶片台的結構和掃描技術與本發明的台結構和掃描技術完全不同，本發明的台結構和掃描技術用於將本發明的光罩圖案以高位置精度的方式縮小投影到供體基板上的對象物，進而以相同的高位置精度將該對象物轉移到受體基板上。因此，作為本發明的具體的台結構及其掃描技術不能參照上述專利文獻3中公開的技術。However, the technology disclosed in Patent Document 3 above is a technology of a semiconductor exposure device based on reduced projection exposure, and its technical field is different from the transfer technology of the present invention. That is, the structure and scanning technology of the intermediate mask stage and wafer stage of the exposure device are completely different from the stage structure and scanning technology of the present invention, and the stage structure and scanning technology of the present invention are used to apply the mask pattern of the present invention with high position accuracy The object projected on the donor substrate is reduced in the same way, and then transferred to the acceptor substrate with the same high position accuracy. Therefore, as a specific stage structure and scanning technique of the present invention, the technique disclosed in Patent Document 3 described above cannot be referred to.
現有技術文獻Existing technical literature
專利文獻1：日本專利公開公報特開2014-67671號Patent Document 1: Japanese Patent Laid-Open No. 2014-67671
專利文獻2：日本專利公開公報特開2010-40380號Patent Document 2: Japanese Patent Publication No. 2010-40380
專利文獻3：日本專利公開公報特開2000-21702號Patent Document 3: Japanese Patent Publication No. 2000-21702
通過將保持供體基板的供體台和放置在該供體臺上的保持光學系統的光學台的兩個台與保持受體基板的受體台作為獨立的機構的構成、以及不將光學台直接放置於供體台而作為分別獨立設置在剛性高的平臺上的構成，使伴隨各台的掃描產生的振動和各種錯誤對台間的同步位置精度造成的影響最小化。其結果，本發明的目的在於提供一種轉移裝置，其在維持轉移位置精度的同時有助於受體基板的大型化、精細化和縮短節拍時間。The two stages of the donor stage holding the donor substrate and the optical stage holding the optical system placed on the donor stage and the acceptor stage holding the acceptor substrate are independent mechanisms, and the optical stage is not Directly placed on the donor table as a structure that is independently installed on a platform with high rigidity minimizes the influence of vibration and various errors accompanying the scanning of each table on the synchronization position accuracy between the tables. As a result, an object of the present invention is to provide a transfer device that contributes to the enlargement and refinement of the receiver substrate and shortens the takt time while maintaining the accuracy of the transfer position.
第一發明是一種轉移裝置，其通過從供體基板的背面向位於移動的所述供體基板的表面上的對象物照射脈衝鐳射，選擇性地將所述對象物剝離，並將所述對象物轉移到邊與所述供體基板相對邊移動的受體基板上，所述轉移裝置包括：脈衝振盪的鐳射裝置；望遠鏡，使從所述鐳射裝置射出的脈衝鐳射成為平行光；整形光學系統，將通過了所述望遠鏡的脈衝鐳射的空間強度分佈整形為均勻的分佈；光罩（mask），使由所述整形光學系統整形後的脈衝鐳射以規定的圖案通過；場鏡，位於所述整形光學系統和所述光罩之間；投影透鏡，將通過了所述光罩的圖案的鐳射縮小投影在所述供體基板的表面；光罩台，保持所述場鏡和所述光罩；光學台，保持所述整形光學系統、所述光罩台和所述投影透鏡；供體台，以使所述供體基板的背面成為鐳射的射入側的朝向保持所述供體基板；受體台，保持所述受體基板；以及可程式設計的多軸控制裝置，具有所述脈衝鐳射振盪用的觸發輸出功能和台控制功能，所述受體台具有將水平面作為XY平面時的Y軸、鉛垂方向的Z軸和XY平面內的θ軸，所述供體台具有X軸、Y軸和θ軸，所述投影透鏡與所述投影透鏡用的Z軸台一起保持在所述光學臺上，所述望遠鏡、所述整形光學系統、所述場鏡、所述光罩和所述投影透鏡構成縮小投影光學系統，所述縮小投影光學系統將所述光罩的圖案縮小投影在所述供體基板的表面，所述供體台的X軸設置在平臺1（第一平臺）上，所述受體台的Y軸設置在與所述平臺1不同的平臺2（第二平臺）上，所述供體台的Y軸懸掛設置於所述供體台的X軸。The first invention is a transfer device that selectively irradiates an object on the surface of the donor substrate by irradiating pulse laser from the back surface of the donor substrate to selectively peel the object and remove the object The object is transferred to the acceptor substrate that moves relative to the donor substrate. The transfer device includes: a pulsed laser device; a telescope to make the pulsed laser emitted from the laser device into parallel light; a shaping optical system , Shaping the spatial intensity distribution of the pulsed laser passing through the telescope into a uniform distribution; a mask to pass the pulsed laser shaped by the shaping optical system in a prescribed pattern; a field lens, located at the Between the shaping optical system and the reticle; a projection lens, which projects the laser beam passing through the pattern of the reticle on the surface of the donor substrate; a reticle stage, holding the field lens and the reticle An optical table to hold the shaping optical system, the reticle table and the projection lens; a donor table to hold the donor substrate so that the back side of the donor substrate becomes the direction of the incident side of the laser; The receiver stage holds the receiver substrate; and the programmable multi-axis control device has the trigger output function and the stage control function for the pulse laser oscillation, and the receiver stage has a horizontal plane as the XY plane The Y axis, the Z axis in the vertical direction, and the θ axis in the XY plane. The donor stage has an X axis, a Y axis, and a θ axis. The projection lens and the Z axis stage for the projection lens are held together On the optical table, the telescope, the shaping optical system, the field lens, the reticle, and the projection lens constitute a reduction projection optical system, and the reduction projection optical system reduces the projection of the pattern of the reticle On the surface of the donor substrate, the X axis of the donor stage is set on the stage 1 (first stage), and the Y axis of the acceptor stage is set on a stage 2 (second) different from the stage 1 On the platform), the Y axis of the donor table is suspended on the X axis of the donor table.
在此，「移動的」基板包括脈衝鐳射（圖1A中表示為「LS」。但是，圖1A雖然表示第二發明的主要結構部，但是由於包含與第一發明的結構共通的結構部分，所以進行參照。以下相同）的照射時也不停止而移動的情況和脈衝鐳射的照射時停止並反復進行移動和停止的情況，根據本發明的轉移裝置進行的轉移工序和所要求的節拍時間等選擇所述的情況。此外，也包括供體基板（D）反復進行移動和停止、受體基板（R）不停止的結構和與其相反的情況的結構。在來自供體基板的對象物的剝離中僅使用一次照射時且要求高節拍時間的情況下，適合選擇供體基板和受體基板以相同或不同的速度不停止地移動的結構。另一方面，在想要使對象物層疊一定厚度的情況下等，有時選擇使供體基板不停止地移動且受體基板在一定照射數期間停止的結構。Here, the "moving" substrate includes pulsed laser (shown as "LS" in FIG. 1A. However, although FIG. 1A shows the main structural part of the second invention, it contains structural parts common to the structure of the first invention, so Refer to. Same below) When moving without stopping during irradiation and when stopping and repeating movement and stopping during irradiation with pulsed laser, choose the transfer process and the required takt time according to the transfer device of the present invention The situation described. In addition, it also includes a structure in which the donor substrate (D) repeatedly moves and stops, the acceptor substrate (R) does not stop, and the structure in the opposite case. When only one irradiation is used for peeling the object from the donor substrate and a high cycle time is required, it is suitable to select a structure in which the donor substrate and the acceptor substrate move at the same or different speeds without stopping. On the other hand, when it is desired to stack a certain thickness of the object, a structure in which the donor substrate is moved without stopping and the acceptor substrate is stopped for a certain number of irradiation periods may be selected.
此外，「對象物」沒有特別的限定，是設置在供體基板上或隔著光吸收層（圖1A中省略圖示）在供體基板上設置成一片的轉移對象物，包括以所述專利文獻中記載的有機EL層為代表的薄膜和以微小的單元狀且規則地配置有多個的對象物，但是並不限定於這些對象物。另外，轉移的機理包括下述情況：被照射了鐳射的所述光吸收層產生衝擊波，由此對象物從供體基板剝離並朝向受體基板轉移；不具備光吸收層而通過直接向對象物照射的鐳射而剝離；但是並不限定於這些情況。In addition, the "object" is not particularly limited, and it is a transfer object provided on the donor substrate or placed in one piece on the donor substrate via a light-absorbing layer (not shown in FIG. 1A), including the patent The organic EL layer described in the literature is a thin film and a plurality of objects are regularly arranged in a fine unit shape, but it is not limited to these objects. In addition, the mechanism of transfer includes the following cases: the light absorbing layer irradiated with laser light generates a shock wave, whereby the object is peeled off from the donor substrate and transferred toward the acceptor substrate; the light absorbing layer is not provided and the object is directly transferred to the object The laser beam is irradiated and peeled off; but it is not limited to these cases.
供體基板的材質只要對所述鐳射的波長具有透過特性即可，理想的是基板的大型化所造成的彎曲量小的材質。另外，在該彎曲量大到不滿足供體基板與受體基板間的間隙的均勻性的程度的情況下，供體台（Yd、θd）的供體基板的保持方法例如有如下的方法：通過在供體基板的中央附近設置吸附區域等來進行機械矯正；除此以外使用後述的高度感測器的組合形成的間隙感測器進行修正。The material of the donor substrate only needs to have a transmission characteristic for the wavelength of the laser beam, and it is desirable that the material has a small amount of bending due to the enlargement of the substrate. In addition, when the amount of bending is too large to satisfy the uniformity of the gap between the donor substrate and the acceptor substrate, the method of holding the donor substrate of the donor stage (Yd, θd) includes, for example, the following method: Mechanical correction is performed by providing an adsorption area or the like near the center of the donor substrate; otherwise, correction is performed using a gap sensor formed by a combination of height sensors described later.
在本發明中，為了將位於供體基板的邊緣附近的對象物向受體基板轉移，供體台的可動範圍包含供體基板應移動的XY平面區域，並且是指依存於受體基板的大小的範圍。作為一個例子，在供體基板的XY平面內的尺寸為200×200[mm]、同樣的受體基板為400×400[mm]的情況下，供體台（Xd、Yd）應移動的規定範圍大體為800×800[mm]。圖4表示該情況。另外，在為了取下供體基板而需要進一步移動的情況下，也包含該區域。In the present invention, in order to transfer an object located near the edge of the donor substrate to the acceptor substrate, the movable range of the donor stage includes the XY plane area where the donor substrate should move, and refers to the size dependent on the acceptor substrate Scope. As an example, when the size of the donor substrate in the XY plane is 200×200 [mm] and the same acceptor substrate is 400×400 [mm], the rule that the donor table (Xd, Yd) should move The range is roughly 800×800 [mm]. Fig. 4 shows this situation. In addition, this area is also included when further movement is required to remove the donor substrate.
此外，「平臺」的材質沒有特別的限定，但是必須是具有極高剛性的材質。为了使平台1（G1）具有剛性，希望俯視時為「コ」形或「□」形的形状。此外，在圖1A中，將平臺2圖示為一個的形狀，但是具體地說，也可以是下述構成：將平臺作為沿Y軸方向設置兩個的平臺，在其中間放置線性刻度和直線電機。另外，平臺1和平臺2可以是固定在同一基礎平臺（G）上的結構。此外，G1可以由平臺11（G11）和平臺12（G12）的組合構成。In addition, the material of the "platform" is not particularly limited, but it must be a material with extremely high rigidity. In order to make the platform 1 (G1) rigid, it is desirable to have a "C" or "□" shape when viewed from above. In addition, in FIG. 1A, the
此外，任何平臺的材質都需要使用鋼鐵、石材或陶瓷材料等剛性高的構件。例如該石材可以使用以花崗岩（granite）為代表的石材，但是並不限定於此。此外，全部平臺無需由相同的材質構成。In addition, the material of any platform needs to use steel, stone or ceramic materials and other high rigidity components. For example, granite (granite) can be used as the stone, but it is not limited thereto. In addition, all platforms need not be made of the same material.
在後述的實施例中，對各台的移動進行詳細說明，但是大體進行以下的動作。首先，供體台的X軸（Xd）在懸掛設置有供體台的Y軸（Yd）的狀態下設置在G1上，沿X軸方向移動。此外，該移動改變供體基板和受體基板間的沿X軸的相對位置。圖1B表示移動的情況。另外，在哪個圖中都未圖示台的可動工作臺和直線導軌等的詳細結構。In the embodiments described later, the movement of each station will be described in detail, but the following operations are generally performed. First, the X axis (Xd) of the donor table is set on G1 in a state where the Y axis (Yd) of the donor table is suspended, and moves in the X axis direction. In addition, this movement changes the relative position along the X axis between the donor substrate and the acceptor substrate. Figure 1B shows the movement. In addition, the detailed structure of the movable table, linear guide, etc. of a table is not shown in any figure.
光學台（Xo）向平臺等設置的設置方法沒有限定，可以選擇各種機構，例如放置在Xd上的狀態、與設置有Xd的平臺設置在同一平臺上的狀態、或放置在與Xd不同的平臺上的狀態等。Xo與Xd同時行進並在X軸方向上移動，整形光學系統（H）、場鏡（F）、光罩（M）和投影透鏡（Pl）的各相對位置不變化，使它們一體移動。另一方面，沿著X軸的Xo的移動會改變供體基板與投影透鏡間的相對位置關係。圖1C表示該移動的情況。The setting method of the optical table (Xo) to the platform is not limited, and various mechanisms can be selected, such as the state placed on Xd, the state set on the same platform as the platform provided with Xd, or placed on a different platform from Xd On the status and so on. Xo and Xd travel simultaneously and move in the X-axis direction. The relative positions of the shaping optical system (H), field lens (F), reticle (M), and projection lens (Pl) do not change, so that they move together. On the other hand, the Xo movement along the X axis changes the relative positional relationship between the donor substrate and the projection lens. FIG. 1C shows this movement.
另外，在不需要改變供體基板與投影透鏡的X軸方向的相對位置的情況下，可以是始終與供體台的X軸一起移動的結構，即省略光學台，均質器（homogenizer）、場鏡、光罩和投影透鏡全部設置在供體台的X軸上或固定在另外的平臺上的結構。In addition, when there is no need to change the relative position of the donor substrate and the projection lens in the X-axis direction, it may be a structure that always moves together with the X-axis of the donor table, that is, the optical table, homogenizer, and field are omitted. The structure in which the mirror, the reticle and the projection lens are all provided on the X axis of the donor table or fixed on another platform.
光罩保持在光罩臺上，該光罩台至少具有與場鏡一起沿X軸方向移動的W軸，此外優選的是，還可以具有：Y軸方向的U軸、沿Z軸方向移動的V軸、作為YZ平面內的轉動軸的R軸、調整相對於V軸的傾斜度的TV軸和調整相對於U軸的傾斜度的TU軸。此外，為了抑制向光罩照射鐳射所產生的熱量的注入，可以在該光罩的眼前一側設置孔眼光罩，該孔眼光罩配置有比光罩圖案大一圈的圖案，與所述光罩配合而成為雙光罩結構。The reticle is held on a reticle stage, and the reticle stage has at least a W-axis that moves in the X-axis direction together with the field lens. In addition, preferably, it may also have a U-axis in the Y-axis direction and a Z-axis direction. The V axis, the R axis which is a rotation axis in the YZ plane, the TV axis which adjusts the inclination with respect to the V axis, and the TU axis which adjusts the inclination with respect to the U axis. In addition, in order to suppress the injection of heat generated by irradiating laser to the photomask, a perforated mask can be provided on the front side of the mask, and the perforated mask is configured with a pattern larger than the pattern of the mask, and the light The mask cooperates to form a double-mask structure.
供體台的Y軸（Yd）和受體台的Y軸（Yr）以將轉移工序中的供體基板和受體基板的間隙保持為固定且維持極高的平行度的狀態，以相同或不同的速度移動。此外，按照各台組的移動方法和支承它們的平臺等的上述結構，通過將受體基板的移動機構限定於Y軸且與供體基板的移動機構分離，能夠抑制因彼此的基板的移動區域的干擾和振動造成的相互影響，能夠應對受體基板的尺寸的大型化和精細化。The Y axis (Yd) of the donor stage and the Y axis (Yr) of the acceptor stage maintain the gap between the donor substrate and the acceptor substrate in the transfer process to be fixed and maintain a very high degree of parallelism, the same or Move at different speeds. In addition, according to the above-mentioned structure of the movement method of each stage group and the platform supporting them, by limiting the movement mechanism of the receiver substrate to the Y axis and separating it from the movement mechanism of the donor substrate, the movement area of the substrates due to each other can be suppressed The mutual influence caused by the interference and vibration can cope with the enlargement and refinement of the size of the receiver substrate.
第二發明是在第一發明的基礎上，所述供體台的X軸放置在所述平臺1上，所述光學台放置在所述供體台的X軸上。The second invention is based on the first invention, the X axis of the donor table is placed on the platform 1, and the optical table is placed on the X axis of the donor table.
圖1A表示所述第二發明的轉移裝置的主要結構部分（側視圖）。圖1B表示Xd放置上Xo並從圖1A的狀態移動了的情況（側視圖）。圖1C表示Xo從圖1B的狀態在Xd上移動了的情況（側視圖）。圖1D表示圖1C的俯視。FIG. 1A shows a main structural part (side view) of the transfer device of the second invention. FIG. 1B shows a case where Xd is placed on Xo and moved from the state of FIG. 1A (side view). FIG. 1C shows a case where Xo has moved on Xd from the state of FIG. 1B (side view). FIG. 1D shows a top view of FIG. 1C.
第三發明是在第一發明的基礎上，所述光學台放置在所述平臺1上，並且所述供體台的X軸懸掛設置於所述平臺1。The third invention is based on the first invention, the optical table is placed on the platform 1, and the X-axis of the donor table is suspended on the platform 1.
圖2A表示所述第三發明的轉移裝置的主要結構部分（側視圖）。圖2B表示Xd和Xo從圖2A的狀態在G1上（Xd懸掛設置於G1）移動了相同距離的情況（側視圖）。圖2C表示僅Xo從圖2B的狀態在G1上移動了的情況（側視圖）。FIG. 2A shows a main structural part (side view) of the transfer device of the third invention. FIG. 2B shows the case where Xd and Xo have moved the same distance on G1 (the Xd suspension is installed on G1) from the state of FIG. 2A (side view). FIG. 2C shows a case where only Xo has moved on G1 from the state of FIG. 2B (side view).
第四發明是在第一發明的基礎上，所述供體台的X軸安裝在所述平臺1上，所述光學台放置在與所述平臺1和所述平臺2都不同的平臺3（第三平臺）上。The fourth invention is based on the first invention, the X axis of the donor table is mounted on the platform 1, and the optical table is placed on a platform 3 different from both the platform 1 and the platform 2 ( Third platform).
在此，「設置在平臺1上」包含放置在平臺1上的狀態和從平臺1懸掛設置的狀態，但是並不限定於這些狀態。Here, "installed on the platform 1" includes a state placed on the platform 1 and a state suspended from the platform 1, but it is not limited to these states.
第五發明是在第一發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The fifth invention is based on the first invention, and has a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X axis of the donor table and the stage 1, A rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X-axis of the donor table and the Y-axis of the donor table is provided.
在此，圖3A表示設置在供體台的X軸（Xd）和平臺1（G1）之間的轉動調整機構（RP）的一個例子。在所述圖3A中，左圖表示俯視圖，右圖表示從X軸方向觀察的側視圖。此外，在俯視圖中，位於外側的一列的孔用於與G1的固定，並且為了具有轉動調整功能而具有“游隙”（餘裕、寬裕）。此外，在俯視圖中，位於內側的二列的孔是使螺絲通過的孔，該螺絲用於固定該RP和Xd的直線導軌。另外，也可以將具有“遊隙”的一側作為該Xd的直線導軌用的孔，但是在以獨立且平行的方式固定兩個直線導軌的情況下，存在設置工序的難易度上升的可能性。Here, FIG. 3A shows an example of a rotation adjustment mechanism (RP) provided between the X axis (Xd) of the donor table and the platform 1 (G1). In the above-mentioned FIG. 3A, the left figure shows a plan view, and the right figure shows a side view seen from the X-axis direction. In addition, in a plan view, the holes in the outer row are used for fixing with G1, and have a “clearance” (margin, margin) in order to have a rotation adjustment function. In addition, in a plan view, the two rows of holes on the inner side are holes through which screws are used to fix the linear guides of the RP and Xd. In addition, the side with "clearance" may be used as the hole for the linear guide of the Xd, but when two linear guides are fixed independently and in parallel, there is a possibility that the difficulty of the installation process increases .
另一方面，圖3B 表示設置在Xd與懸掛設置於Xd的供體台的Y軸（Yd）之間的RP的一個例子。在俯視圖中，位於外側的二列的孔用於與Xd的固定，並且為了具有轉動調整功能而具有“遊隙”。此外，沿Y軸方向排列的二列的孔用於與Yd的固定。On the other hand, FIG. 3B shows an example of RP installed between Xd and the Y axis (Yd) of the donor table suspended on Xd. In the plan view, the two rows of holes located on the outside are used for fixing with Xd, and have a "play" in order to have a rotation adjustment function. In addition, two rows of holes arranged in the Y-axis direction are used for fixing with Yd.
此外，作為設置在G1和Xd之間的RP，可以使用與前述的RP不同的RP。例如，將支點（Z軸方向的轉動軸）設置在該RP與G1的接觸面上，該支點用於相對於G1在XY平面內對放置Xd的RP進行轉動調整（省略圖示），在充分遠離所述支點的RP的側面（鉛垂面）設置相對於該支點的力點。在該力點附近的G1上設置朝向力點沿水準推壓的大型螺絲。同樣，在與其相反側的RP的側面設置大型螺絲。由此，能夠使放置有Xd的該RP相對於G1以所述支點為中心以微弧度[μrad]數量級在XY平面內轉動。In addition, as the RP provided between G1 and Xd, an RP different from the aforementioned RP may be used. For example, a fulcrum (rotation axis in the Z-axis direction) is provided on the contact surface of the RP and G1. The fulcrum is used to adjust the rotation of the RP where Xd is placed in the XY plane relative to G1 (not shown). The side (vertical plane) of the RP far from the fulcrum is provided with a force point relative to the fulcrum. A large screw that is pushed along the level toward the force point is provided on G1 near the force point. Similarly, large screws are provided on the opposite side of the RP. Thereby, the RP on which Xd is placed can be rotated in the XY plane on the order of microradians [μrad] with respect to G1 around the fulcrum as the center.
第六發明是在第二發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述光學台之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The sixth invention is based on the second invention, a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X axis of the donor table and the stage 1, There is a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X-axis of the donor table and the optical table, and the X-axis of the donor table and the Between the Y axis of the donor table, there is a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the two.
作為上述RP，例如可以使用用於上述的圖3A所示的G1和Xd之間的RP、用於圖3C所示的Xd和Xo之間的RP、以及用於圖3B所示的Xd和Yd之間的RP。As the above RP, for example, the RP used between G1 and Xd shown in FIG. 3A described above, the RP used between Xd and Xo shown in FIG. 3C, and the Xd and Yd shown in FIG. 3B can be used. Between RP.
第七發明是在第三發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述光學台和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The seventh invention is based on the third invention, and has a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X axis of the donor table and the stage 1, A rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the optical table and the platform 1 is provided between the X axis of the donor table and the donor table. A rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the two is provided between the Y axes.
在此，例如，作為Xo和G1之間以及Xd和G1之間的轉動調整機構分別使用圖3A所示的RP，另一方面，作為Xd和Yd之間的轉動調整機構使用圖3B所示的RP。前者的RP上具有使Xo和Xd的直線導軌固定用螺絲通過的孔，使用該孔所具有的「遊隙」，調整固定有各台用直線導軌的RP和G1的XY平面內的設置角度。Here, for example, RP shown in FIG. 3A is used as the rotation adjustment mechanism between Xo and G1 and between Xd and G1, on the other hand, as shown in FIG. 3B as the rotation adjustment mechanism between Xd and Yd RP. The former RP has a hole through which Xo and Xd linear guide rail fixing screws pass, and using the "backlash" of the hole, the installation angle in the XY plane of the RP and G1 to which each linear guide rail is fixed is adjusted.
第八發明是在第四發明的基礎上，在所述供體台的X軸和所述平臺1之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述光學台和所述平臺3之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構，在所述供體台的X軸和所述供體台的Y軸之間具有用於對兩者間的XY平面內的設置角度進行微調整的轉動調整機構。The eighth invention is based on the fourth invention, and has a rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the X axis of the donor table and the stage 1, A rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the optical table and the platform 3 is provided between the optical axis and the donor table. A rotation adjustment mechanism for finely adjusting the installation angle in the XY plane between the two is provided between the Y axes.
第九發明是在第一發明至第八發明中的任意一項發明的基礎上，所述鐳射裝置是準分子雷射器。The ninth invention is based on any one of the first to eighth inventions, and the laser device is an excimer laser.
在此，準分子雷射器的振盪波長主要是193[nm]、248[nm]、308[nm]或351[nm]，根據光吸收層的材料和對象物的光吸收特性，從它們中適當選擇。Here, the oscillation wavelength of the excimer laser is mainly 193 [nm], 248 [nm], 308 [nm] or 351 [nm], according to the light absorption characteristics of the material of the light absorption layer and the object, from which Choose appropriately.
第十發明是在第九發明的基礎上，所述轉移裝置包括脈衝光閘，所述脈衝光閘切斷從所述準分子雷射器射出的雷射脈衝的任意脈衝列。The tenth invention is based on the ninth invention. The transfer device includes a pulse shutter that cuts off any pulse train of laser pulses emitted from the excimer laser.
已為公眾所知的是，脈衝振盪的鐳射裝置從所述可程式設計的多軸控制裝置接收觸發信號並開始振盪，但是其振盪後的一定次數或一定時間內的脈衝的能量不穩定到由於應用的不同而不能使用的程度。由此，為了排除該不穩定的脈衝組，需要通過機械性的光閘動作排除上述脈衝組。具體地說，例如在以1[kHz]振盪的準分子雷射器的情況下，相鄰的雷射脈衝間的時間窗約為1[ms]，需要能夠在該時間內移動（橫穿）一定距離的高速的光閘功能。該一定距離依存於使光閘動作的場所的鐳射的空間大小，如果該距離是5[mm]，則所要求的光閘動作速度是5[m/s]，需要使用音圈（voice coil）等使光學元件出入光路的超高速光閘。另外，即使通過成形光學系統等使該空間的大小變小，能夠縮短光閘構件橫穿的距離，也會因鐳射的能量密度而容易損傷。It is known to the public that the pulsed laser device receives a trigger signal from the programmable multi-axis control device and starts to oscillate, but the energy of the pulse is unstable to a certain number of times or within a certain time after the oscillation. The degree of application that cannot be used. Therefore, in order to exclude this unstable pulse group, the above-mentioned pulse group needs to be eliminated by a mechanical shutter operation. Specifically, for example, in the case of an excimer laser oscillating at 1 [kHz], the time window between adjacent laser pulses is about 1 [ms], and it needs to be able to move (traverse) within this time High-speed shutter function at a certain distance. The certain distance depends on the size of the laser space in the place where the shutter is operated. If the distance is 5 [mm], the required shutter speed is 5 [m/s], and a voice coil is required Super high-speed shutters that allow optical elements to enter and exit the optical path. In addition, even if the size of this space is reduced by forming an optical system or the like, the distance that the shutter member traverses can be shortened, and it is easily damaged due to the laser energy density.
第十一發明是在第十發明的基礎上，所述可程式設計的多軸控制裝置具有至少同時控制所述受體台的Y軸和所述供體台的Y軸的功能，並且包括使用用於對所述台的移動位置誤差進行修正而預先製作的二維分佈修正值資料來對所述移動位置誤差進行修正的裝置。The eleventh invention is based on the tenth invention, and the programmable multi-axis control device has a function of simultaneously controlling at least the Y axis of the receiver table and the Y axis of the donor table, and includes the use of A device for correcting the moving position error by correcting the two-dimensional distribution correction value data prepared in advance to correct the moving position error of the table.
例如，使用Xd或Xo與、Yr或Yd的任意一種組合的類比的XY平面中的二維分佈修正值資料資訊，進行鐳射的照射時的受體基板和供體基板的位置修正。修正的位置誤差的主要原因包括伴隨各台的移動產生的縱搖（pitching）、偏轉（yawing）和橫搖（rolling），但是並不限定這些。此外，確定修正值的參數除了所述各台的位置資訊以外，還包含Yr和Yd的移動速度及它們的比。For example, the two-dimensional distribution correction value data information in the XY plane by analogy of any combination of Xd or Xo and Yr or Yd is used to correct the position of the acceptor substrate and the donor substrate during laser irradiation. The main reasons for the corrected position error include pitching, yawing, and rolling accompanying the movement of each station, but these are not limited. In addition, the parameters for determining the correction value include the moving speed of Yr and Yd and their ratio in addition to the position information of each station.
第十二發明是在第十一發明的基礎上，監測所述供體基板的位置的高倍率照相機設置在所述受體台的Z軸上，或者監測所述受體基板的位置的高倍率照相機設置在所述供體台的X軸或與該供體台的X軸一起移動的部分上、或者設置在所述光學台或與該光學台一起移動的部分上。The twelfth invention is based on the eleventh invention, a high-magnification camera for monitoring the position of the donor substrate is provided on the Z axis of the acceptor table, or a high-magnification for monitoring the position of the acceptor substrate The camera is provided on the X axis of the donor table or a part that moves together with the X axis of the donor table, or on the optical table or a part that moves together with the optical table.
在此，在與「供體台的X軸一起移動的部分」中也包含懸掛設置於Xd的Yd。在本發明中，各台的Y軸之間的平行度和X軸之間的平行度以及各台的Y軸與X軸的垂直度是左右轉移位置精度的重要參數。此外，在組裝各台時的平行度和垂直度的檢驗中，相對於保持對準用基板的各台的移動距離，使用高倍率、高解析度的照相機監測與其垂直的方向上的偏差量，並使用所述轉動調整機構來進行垂直度的調整。此外，在Yr和Yd間的平行度的調整中，使兩個台同步移動（並行）相同距離，通過安裝在一個臺上的高倍率照相機，觀察附加在對置的臺上的進行了圖案匹配的對準標記圖像（十字標記等）的位置是否未移動而靜止。在該情況下，Y軸方向的移動表示Yd和Yr的同步異常，X軸方向的移動表示Yd和Yr的平行度的調整錯誤。Here, the "portion that moves together with the X axis of the donor table" also includes Yd suspended from Xd. In the present invention, the parallelism between the Y axis and the X axis of each stage and the perpendicularity of the Y axis and the X axis of each stage are important parameters for the accuracy of the left and right transfer positions. In addition, in the inspection of parallelism and perpendicularity when assembling each stage, with respect to the movement distance of each stage for maintaining the alignment substrate, a high-magnification, high-resolution camera is used to monitor the amount of deviation from the vertical direction, and The rotation adjustment mechanism is used to adjust the verticality. In addition, in the adjustment of the parallelism between Yr and Yd, the two stages are moved (parallel) by the same distance synchronously, and the high-magnification camera installed on one stage is used to observe the pattern matching performed on the opposite stage. Whether the position of the alignment mark image (cross mark, etc.) is still without moving. In this case, the movement in the Y-axis direction indicates that the synchronization of Yd and Yr is abnormal, and the movement in the X-axis direction indicates an adjustment error in the parallelism of Yd and Yr.
另外，作為高倍率照相機通常使用CCD照相機。倍率等依存於轉移位置精度，但是作為一個例子，在檢測所述[μrad]數量級的偏差量的情況下亦即在相對於1[m]的台移動距離檢測1[μm]的偏差量的情況下，可以使用解析度1[μm]且倍率為20倍～50倍程度的照相機。In addition, as a high-magnification camera, a CCD camera is generally used. The magnification and the like depend on the accuracy of the transfer position, but as an example, in the case of detecting the amount of deviation of the order of [μrad], that is, in the case of detecting the amount of deviation of 1 [μm] with respect to the stage movement distance of 1 [m] Next, a camera with a resolution of 1 [μm] and a magnification of approximately 20 to 50 times can be used.
第十三發明是在第十二發明的基礎上，所述供體台和所述受體台包括間隙感測器，所述間隙感測器測量所述供體基板的表面（下表面）與所述受體基板的表面的間隙。A thirteenth invention is based on the twelfth invention, wherein the donor stage and the acceptor stage include a gap sensor that measures the surface (lower surface) of the donor substrate and The gap on the surface of the receptor substrate.
在此，間隙感測器是指組合了分別設置在供體和受體臺上的高度感測器的感測器，設置在供體臺上的高度感測器測量到受體基板的距離，設置在受體臺上的高度感測器測量到供體基板的距離，根據兩個測量值和高度感測器的高度資訊，計算供體基板與受體基板間的間隙。Here, the gap sensor refers to a sensor combined with height sensors provided on the donor and the receiver table respectively, and the height sensor provided on the donor table measures the distance to the receiver substrate, The height sensor installed on the acceptor table measures the distance to the donor substrate, and calculates the gap between the donor substrate and the acceptor substrate based on the two measured values and the height information of the height sensor.
第十四發明是在第十三發明的基礎上，作為所述受體台的Y軸用和所述供體台的Y軸用，分別包括使用鐳射干涉計的位置測量裝置。The fourteenth invention is based on the thirteenth invention, and includes a position measuring device using a laser interferometer for the Y-axis of the receiver table and the Y-axis of the donor table.
作為受體台的Y軸（Yr）用鐳射干涉計的結構，可以使用包括以下部件的結構：反射鏡（Ic），保持在與Yr一起移動的部分上；干涉計用鐳射（IL），固定在例如平臺2（G2）等不容易受到因所述移動產生的振動等的影響的平臺上；以及1/4波長板等（省略圖示）。此外，作為所述反射鏡，適合使用三軸的角錐棱鏡（逆反射器（retro-reflector）），並優選盡可能接近受體基板的位置（高度）。由圖5A表示概況（省略了供體台組和受體台的Z軸、θ軸的圖示）。As the structure of the laser interferometer for the Y-axis (Yr) of the receiver stage, a structure including the following components can be used: a mirror (Ic), which is held on the part that moves with Yr; an interferometer laser (IL), fixed On platforms such as platform 2 (G2) that are not susceptible to vibration or the like due to the movement; and quarter wave plates (not shown). In addition, as the mirror, a three-axis corner prism (retro-reflector) is suitably used, and it is preferable to be as close as possible to the position (height) of the receptor substrate. The overview is shown in FIG. 5A (the illustration of the Z-axis and the θ-axis of the donor stage and the acceptor stage is omitted).
基於來自所述線性編碼器的位置資訊，通過可程式設計的多軸控制裝置來控制Yr，將所述鐳射干涉計用於作為所述線性編碼器的校正、以及作為在後述的Yr和Yd的齒輪模式動作中精細地調整其齒輪比時的校正。Based on the position information from the linear encoder, Yr is controlled by a programmable multi-axis control device, and the laser interferometer is used as a correction for the linear encoder, and as Yr and Yd described later Correction when finely adjusting the gear ratio during gear mode operation.
作為供體台的Y軸（Yd）用鐳射干涉計的結構，可以使用包括以下部件的結構：Ic，保持在與懸掛設置於Xd的Yd一起移動的面上；IL，以同樣方式固定在Xd上；以及1/4波長板等（省略圖示）。在此，作為所述反射鏡，適合使用三軸的角錐稜鏡（逆反射器），優選盡可能接近供體基板的位置（高度）。由圖5B表示概況。（受體台組省略圖示）另外，對於任意一個干涉計用鐳射的檢測方式的選擇，只要根據所要求的轉移位置精度來選擇最適合的方式即可。As the structure of the laser interferometer for the Y-axis (Yd) of the donor table, a structure including the following components can be used: Ic, held on the surface that moves together with Yd suspended from Xd; IL, fixed to Xd in the same manner On; and 1/4 wavelength plate (not shown). Here, as the reflecting mirror, a triaxial pyramid (retroreflector) is suitably used, and it is preferable to be as close as possible to the position (height) of the donor substrate. The overview is shown by Fig. 5B. (The receiver station group is not shown.) In addition, for the selection of any interferometer laser detection method, it is sufficient to select the most suitable method according to the required transfer position accuracy.
第十五發明是在第十四發明的基礎上，所述轉移裝置包括共焦點光束輪廓儀，所述共焦點光束輪廓儀在與通過所述投影透鏡對所述光罩的圖案進行縮小投影並成像的位置共軛的位置具有焦平面。The fifteenth invention is based on the fourteenth invention, and the transfer device includes a confocal beam profiler, and the confocal beam profiler performs a reduced projection of the pattern of the photomask through the projection lens and The position where the image is conjugated has a focal plane.
通過該共焦點光束輪廓儀，能夠即時且以與縮小成像光學系統的成像解析度同等的精度，監測向供體基板表面縮小投影的鐳射的位置和空間強度分佈的狀態以及其成像狀態。With this confocal beam profiler, it is possible to monitor the position and spatial intensity distribution of the laser beam projected on the surface of the donor substrate and the imaging state thereof with the same accuracy as the imaging resolution of the reduced imaging optical system.
第十六發明是一種轉移裝置的使用方法，所述轉移裝置是第十三發明的轉移裝置，使用所述間隙感測器，與供體基板的XY位置資訊一起預先測量供體基板的彎曲量，基於通過所述測量得到的彎曲量的二維分佈資料，邊使用通過所述受體台的Z軸（Zr）或所述投影透鏡的Z軸台進行的調整，邊對供體基板與受體基板的間隙進行修正。The sixteenth invention is a method of using a transfer device that is the transfer device of the thirteenth invention, and uses the gap sensor to measure the amount of bending of the donor substrate in advance together with the XY position information of the donor substrate , Based on the two-dimensional distribution data of the bending amount obtained by the measurement, while using the adjustment through the Z axis (Zr) of the receiver stage or the Z axis stage of the projection lens, the donor substrate and the receiver The gap of the bulk substrate is corrected.
第十七發明是一種轉移裝置的調整方法，所述轉移裝置是第五發明至第八發明中的任意一項所述的轉移裝置，所述轉移裝置的調整方法是組裝所述轉移裝置的工序中的所述受體台的Y軸和所述供體台的Y軸的平行度的調整方法，所述轉移裝置的調整方法以與所述受體台的Z軸和θ軸一起進行了直線度的調整的所述受體台的Y軸為基準，依次包括如下的步驟：通過位於所述平臺1和所述供體台的X軸之間的轉動調整機構，對所述受體台的Y軸與所述供體台的X軸的垂直度進行調整；使懸掛設置於調整了垂直度的所述供體台的X軸的供體台的Y軸和所述受體台的Y軸同步平排行進，通過安裝在與所述受體台的Y軸一起移動的部位上的高倍率照相機，觀察對置的供體台的Y軸上的對準標記；以及基於所述觀察的結果，通過所述供體台的X軸和所述供體台的Y軸之間的轉動調整機構，對所述受體台的Y軸與所述供體台的Y軸的平行度進行調整。The seventeenth invention is a method for adjusting a transfer device, which is the transfer device according to any one of the fifth invention to the eighth invention, and the method for adjusting the transfer device is a step of assembling the transfer device The method of adjusting the parallelism of the Y axis of the acceptor stage and the Y axis of the donor stage in the method, and the adjustment method of the transfer device are linearly aligned with the Z axis and the θ axis of the acceptor stage The Y axis of the receiver stage is adjusted as a reference, and in turn includes the following steps: the rotation adjustment mechanism between the platform 1 and the X axis of the donor stage The verticality of the Y axis and the X axis of the donor table is adjusted; the Y axis of the donor table suspended on the X axis of the donor table with the verticality adjusted and the Y axis of the receiver table are suspended Synchronous parallel travel, observing the alignment mark on the Y axis of the opposite donor table through a high-magnification camera mounted on the site that moves with the Y axis of the acceptor table; and based on the result of the observation The rotation adjustment mechanism between the X axis of the donor table and the Y axis of the donor table adjusts the parallelism of the Y axis of the receiver table and the Y axis of the donor table.
另外，為了高精度地確認並調整Yd與Yr的平行度，優選的是，高倍率照相機位於放置在Yr上的各台和板等中最高的位置，並且安裝在剛性高的部分上。In addition, in order to confirm and adjust the parallelism of Yd and Yr with high accuracy, it is preferable that the high-magnification camera is located at the highest position among the tables, plates, etc. placed on Yr, and is mounted on the part with high rigidity.
本發明能夠在供體基板和受體基板的高同步位置精度的基礎上，在保持高轉移位置精度的同時實現轉移裝置的受體基板的大型化和縮短節拍時間。The present invention can realize the enlargement of the acceptor substrate of the transfer device and the reduction of the takt time while maintaining the high transfer position accuracy while maintaining the high synchronization position accuracy of the donor substrate and the acceptor substrate.
下面，參照附圖對本發明的轉移裝置的具體結構進行詳細說明。Hereinafter, the specific structure of the transfer device of the present invention will be described in detail with reference to the drawings.
[實施例1][Example 1]
在本實施例1中，表示如下的實施例：在尺寸為200×200[mm]的供體基板上，將隔著光吸收層形成為一片的層狀（固態膜）對象物作為每個形狀為10×10[μm]的單元狀的轉移對象物，以縱12000×橫12000的合計144百萬個矩陣狀的方式向尺寸為400×400[mm]的受體基板轉移。上述144百萬個的轉移位置是±1[μm]的位置精度，各縱、橫的間距是30[μm]。In the first embodiment, the following embodiment is shown: on a donor substrate having a size of 200×200 [mm], a layered (solid film) object formed as one piece through a light absorption layer is taken as each shape The unit-shaped transfer object of 10×10 [μm] is transferred to a receiver substrate of size 400×400 [mm] so that a total of 144 million matrices in the form of 12000×12,000 in width are formed. The above-mentioned 144 million transfer positions have a position accuracy of ±1 [μm], and the vertical and horizontal pitches are 30 [μm].
首先，圖1A表示與本發明的實施相關的轉移裝置的主要結構部分。另外，在圖1A中省略了鐳射裝置、控制裝置和其它監視器等的圖示，X軸、Y軸和Z軸方向如圖中所示。平臺1（G1）、平臺11（G11）、平臺12（G12）和平臺2（G2）全部為使用花崗岩的石平臺。此外，基礎平臺（G）使用了剛性高的鐵。另外，本實施例是將上述第六發明的構成作為基礎的實施例。First, FIG. 1A shows the main structural parts of the transfer device related to the implementation of the present invention. In addition, illustrations of laser devices, control devices, other monitors, etc. are omitted in FIG. 1A, and the X-axis, Y-axis, and Z-axis directions are as shown in the figure. Platform 1 (G1), Platform 11 (G11), Platform 12 (G12) and Platform 2 (G2) are all stone platforms using granite. In addition, the base platform (G) uses high-rigidity iron. In addition, this embodiment is an embodiment based on the configuration of the sixth invention described above.
按照從鐳射裝置射出脈衝鐳射並照射到供體基板上的對象物為止的鐳射的傳輸順序，依次對本發明的實施例1的轉移裝置的構成進行說明。首先，在本實施例1中使用的鐳射裝置是振盪波長為248[nm]的準分子雷射器。射出的鐳射的空間分佈大約為8×24[mm]，光束發散角是1×3毫弧度[mrad]。以上均是（縱×橫）的記載，數值是FWHM。The configuration of the transfer device according to the first embodiment of the present invention will be described in order according to the laser transmission sequence until the pulse laser is emitted from the laser device and irradiated to the object on the donor substrate. First, the laser device used in the first embodiment is an excimer laser with an oscillation wavelength of 248 [nm]. The spatial distribution of the emitted laser is about 8×24 [mm], and the beam divergence angle is 1×3 milliradian [mrad]. The above are all (vertical × horizontal) descriptions, and the numerical value is FWHM.
另外，準分子雷射器的規格為多種，根據輸出的不同、重複頻率的不同、光束尺寸的不同和光束發散角的不同等，存在有射出的鐳射縱向長（使所述縱和橫反轉）的準分子雷射器，但是通過光學系統的追加、省略或設計變更，存在有多種能夠在本實施例1中使用的準分子雷射器。此外，雖然鐳射裝置依存於其大小，但是一般來說設置在與設置有轉移裝置的台組的基座不同的基座（鐳射用平臺）上。In addition, there are many specifications of excimer lasers. Depending on the output, the repetition frequency, the beam size, and the beam divergence angle, there is a longitudinal length of the emitted laser (inverting the vertical and horizontal ), but by adding, omitting, or changing the design of the optical system, there are many types of excimer lasers that can be used in the first embodiment. In addition, although the laser device depends on its size, it is generally installed on a base (laser platform) different from the base of the stage group where the transfer device is installed.
來自準分子雷射器的射出光射入望遠鏡光學系統，並向其前方的整形光學系統傳輸。在此，如圖1A所示，整形光學系統以使光軸沿X軸的方式保持在光學台（Xo）上，該光學台設置在使供體基板移動的供體台的X軸（Xd）上。此外，就要射入該整形光學系統之前的鐳射以在所述供體台的X軸的移動範圍內的任意位置都成為大體平行光的方式由望遠鏡光學系統進行調整。因此，不論Xd和/或Xo的X軸方向的移動怎樣，鐳射始終以大體相同尺寸、相同角度（垂直）射入整形光學系統。在本實施例1中，其尺寸約為25×25[mm]（縱×橫）。The emitted light from the excimer laser enters the telescope optical system and transmits to the shaping optical system in front of it. Here, as shown in FIG. 1A, the shaping optical system is held on an optical table (Xo) such that the optical axis is along the X axis, and the optical table is provided on the X axis (Xd) of the donor table that moves the donor substrate on. In addition, the laser beam just before entering the shaping optical system is adjusted by the telescope optical system so that any position within the X-axis movement range of the donor table becomes substantially parallel light. Therefore, regardless of the movement of Xd and/or Xo in the X-axis direction, the laser always enters the shaping optical system at substantially the same size and the same angle (vertical). In the first embodiment, the size is approximately 25×25 [mm] (vertical×horizontal).
本實施例1的整形光學系統（H）在與光軸方向垂直的平面內，將兩個一組的單軸柱面透鏡陣列組合成兩組直角。其配置為：各組內的前級的透鏡陣列通過後級的透鏡陣列和位於其後方的聚光透鏡（省略圖示），在光罩（M）上成像。The shaping optical system (H) of Embodiment 1 combines two sets of single-axis cylindrical lens arrays into two sets of right angles in a plane perpendicular to the optical axis direction. The configuration is such that the lens array of the front stage in each group passes through the lens array of the rear stage and a condenser lens (not shown) located behind it to form an image on the reticle (M).
通過了整形光學系統的鐳射經由在與投影透鏡（Pl）的組合中構成圖像側遠心縮小投影光學系統的場鏡（F）射入光罩。在光罩上的鐳射的尺寸是1×50[mm]（FWHM），其空間強度分佈均勻性為±5%以內的區域的尺寸維持0.5×45[mm]以上。The laser light that has passed through the shaping optical system enters the reticle through the field lens (F) that constitutes the image-side telecentric reduction optical system in combination with the projection lens (Pl). The size of the laser on the reticle is 1×50 [mm] (FWHM), and the size of the area with a uniform spatial intensity distribution within ±5% remains above 0.5×45 [mm].
光罩固定在光罩臺上，如上所述，所述光罩台具有合計六軸調整機構，所述六軸為：與場鏡一起沿X軸方向移動的W軸、Y軸方向的U軸、沿Z軸方向移動的V軸、作為YZ平面內的轉動軸的R軸、調整相對於V軸的傾斜度的TV軸、以及調整相對於U軸的傾斜度的TU軸。The reticle is fixed to the reticle stage. As mentioned above, the reticle stage has a total six-axis adjustment mechanism, and the six axes are: a W-axis moving in the X-axis direction and a U-axis in the Y-axis direction together with the field lens , A V-axis moving in the Z-axis direction, an R-axis that is a rotation axis in the YZ plane, a TV axis that adjusts the inclination relative to the V-axis, and a TU axis that adjusts the inclination relative to the U-axis.
本實施例1的光罩使用通過鍍鉻在合成石英板上描繪（形成）有圖案的光罩。圖6表示其概略。在該光罩中，未實施鍍鉻的、表示為白色的窗部分（a）透過鐳射，實施了鍍鉻的有顏色部分（b）遮擋鐳射。一個窗的形狀（a）是50×50[μm]，將其沿X軸方向（一列）以150[μm]間隔連續43.85[mm]合計配置300個。此外，實施鍍鉻的面是鐳射的射出側，另一方面，射入側設有248[nm]用的反射防止膜。此外，代替鍍鉻，可以使用鋁蒸鍍或電介質多層膜。The mask of this Example 1 used the mask which patterned (formed) the synthetic quartz plate by chrome plating. Fig. 6 shows the outline. In this photomask, the window portion (a) that is not chrome-plated and shown in white transmits laser light, and the colored portion (b) that is chrome-plated blocks the laser light. The shape (a) of one window is 50×50 [μm], and 300 of them are arranged continuously at 43 [85] [mm] at 150 [μm] intervals along the X-axis direction (one row). In addition, the chrome plated surface is the laser emission side, and on the other hand, an 248 [nm] anti-reflection film is provided on the injection side. In addition, instead of chromium plating, aluminum vapor deposition or dielectric multilayer film may be used.
另外，當在一個光罩上切換使用多個圖案的轉移工序的情況下，如果在從所述整形光學系統向光罩上照射的鐳射的尺寸的範圍內、且在光罩台的可動範圍內，則可以使用描繪有不同的圖案的光罩。In addition, when the transfer process using a plurality of patterns is switched on one mask, if it is within the size of the laser beam irradiated from the shaping optical system onto the mask, and within the movable range of the mask stage , You can use a mask drawn with different patterns.
此外，在圖7中，當在使受體基板（R）進行一次掃描期間（其中也包含中途停止）使用以相同速度多次或往返對供體基板（D）進行掃描的轉移工序等情況下，圖6所示的光罩圖案可以不是一列，而是可以採用多列圖案（但是鐳射照射在該光罩圖案中間歇且選擇性地進行照射。圖7中表示為3×2列的矩陣）。由此，能夠使用與受體基板相比尺寸小的供體基板。In addition, in FIG. 7, when the recipient substrate (R) is scanned once (including halfway stop), the transfer process of scanning the donor substrate (D) at the same speed multiple times or back and forth is used , The mask pattern shown in FIG. 6 may not be one column, but may adopt a multi-column pattern (but laser irradiation intermittently and selectively irradiates the mask pattern. Represented in FIG. 7 as a matrix of 3×2 columns) . Thus, a donor substrate having a smaller size than the acceptor substrate can be used.
通過了所述光罩圖案的鐳射通過落射鏡將其傳輸方向改變為朝向鉛垂下方（－Z方向）並射入投影透鏡。該投影透鏡設有248nm用的反射防止膜，具有1/5的縮小倍率。詳細如下表1所示。The laser beam that has passed through the mask pattern changes its transmission direction through the epi-mirror to be vertically downward (-Z direction) and enters the projection lens. The projection lens is provided with an anti-reflection film for 248 nm, and has a reduction magnification of 1/5. The details are shown in Table 1 below.
[表1]
從投影透鏡射出的鐳射從供體基板的背面射入，以所述光罩圖案的1/5的縮小尺寸準確地向形成於其表面（下表面）的光吸收層的規定位置進行投影。在此，以預先附加於供體基板的對準標記等為基準，通過供體台的X軸（Xd）、Y軸（Yd）和θ軸（θd）進行調整後，決定XY平面內的規定位置。The laser light emitted from the projection lens enters from the back surface of the donor substrate, and accurately projects to a predetermined position of the light absorbing layer formed on the surface (lower surface) at a reduced size of 1/5 of the mask pattern. Here, the alignment in the XY plane is determined by adjusting the X-axis (Xd), Y-axis (Yd), and θ-axis (θd) of the donor stage based on the alignment mark or the like previously attached to the donor substrate. position.
為了調整成由投影透鏡生成的光罩圖案的圖像面聚焦於供體基板的表面和光吸收層的邊介面，調整投影透鏡的Z軸台（Zl）和放置有場鏡（F）的光罩台的W軸的位置。另外，雖然可以追加供體基板的Z軸方向的調整功能（Z軸台），但是需要考慮因向供體台的X軸（Xd）增加加重負荷導致的轉移位置精度的下降。In order to adjust the image surface of the reticle pattern generated by the projection lens to focus on the surface of the donor substrate and the interface of the light absorbing layer, adjust the Z-axis stage (Zl) of the projection lens and the reticle placed with the field lens (F) The position of the W axis of the stage. In addition, although the adjustment function of the donor substrate in the Z-axis direction (Z-axis table) can be added, it is necessary to consider the decrease in the accuracy of the transfer position due to the increased load applied to the X-axis (Xd) of the donor table.
調整供體基板表面和光吸收層的邊介面的成像位置時，使用在焦平面上具有與像平面為共軛關係的平面的共焦點光束輪廓儀（BP）的即時監測是有效的。圖8表示該調整畫面的情況。在本實施例1中，即時且以高解析度監測縮小成像於供體基板表面和光吸收層的邊介面的鐳射的空間強度分佈。When adjusting the imaging position of the donor substrate surface and the interface of the light absorbing layer, real-time monitoring using a confocal beam profiler (BP) that has a plane conjugate to the image plane on the focal plane is effective. FIG. 8 shows this adjustment screen. In the first embodiment, the spatial intensity distribution of laser imaged on the interface between the surface of the donor substrate and the light-absorbing layer is reduced in real time and monitored with high resolution.
以上是與從鐳射裝置射出的脈衝鐳射的傳輸有關的本實施例1的裝置結構所實現的功能。The above are the functions realized by the device structure of the first embodiment related to the transmission of the pulse laser emitted from the laser device.
接著，簡單說明在本發明的裝置中如何使用本實施例1的結構以機械方式實現受體台的Y軸（Yr）與供體台的Y軸（Yd）的平行度。Next, a brief description will be given of how to use the structure of the first embodiment in the device of the present invention to mechanically realize the parallelism of the Y axis (Yr) of the receiver table and the Y axis (Yd) of the donor table.
各台如圖1A所示，在石平臺1（G1）上放置供體台的X軸（Xd），並且在其上放置光學台（Xo）。受體台組（Yr、θr、Zr）放置在石平臺2（G2）上。此外，整體構建在基礎平臺（G）上。此外，轉動調整機構（RP）設置在G1和Xd之間、Xo和Xd之間、以及Xd和Yd之間（省略圖示）。Each table, as shown in FIG. 1A, places the X axis (Xd) of the donor table on the stone platform 1 (G1), and places the optical table (Xo) on it. The receptor platform group (Yr, θr, Zr) is placed on the stone platform 2 (G2). In addition, the whole is built on the basic platform (G). In addition, a rotation adjustment mechanism (RP) is provided between G1 and Xd, between Xo and Xd, and between Xd and Yd (not shown).
另外，為了調整各台的軸的垂直度和平行度，代替供體基板使用保持在供體臺上的調整基板AD，並且代替受體基板使用放置在受體臺上的調整基板AR。在任意一個調整基板上作為對準線描繪有表示準確地形成直角的X軸（對準線X）和Y軸（對準線Y）的線，並且在規定的位置（間隔）處也附加有標記。In addition, in order to adjust the verticality and parallelism of the axes of the respective stages, the adjustment substrate AD held on the donor stage is used instead of the donor substrate, and the adjustment substrate AR placed on the recipient stage is used instead of the acceptor substrate. A line indicating that the X axis (alignment line X) and the Y axis (alignment line Y) are accurately formed at right angles is drawn as an alignment line on any of the adjustment substrates, and is also added at a predetermined position (interval) mark.
1）Yr與AR（Y）的平行度（Yr與AR（X）的垂直度）1) The parallelism of Yr and AR (Y) (the perpendicularity of Yr and AR (X))
為了調整受體台的Y軸（Yr）與調整基板AR上的對準線Y的平行度，通過高倍率CCD照相機觀察放置在受體台的Z軸（Zr）上的調整基板AR，所述高倍率CCD照相機固定在光學台（Xo）上或設置於光學台（Xo）的投影透鏡用的Z軸臺上。使所述Yr軸移動400[mm]，以使對準線Y的X軸方向的偏差量在1[μm]以內的方式使用受體台的θ軸（θr）進行調整。另外，此時的台的移動距離在台的有效行程的範圍內，此外，應容許的偏差量根據所要求的轉移精度而變化。（以下相同）In order to adjust the parallelism of the Y axis (Yr) of the receptor table and the alignment line Y on the adjustment substrate AR, the adjustment substrate AR placed on the Z axis (Zr) of the receptor table is observed by a high-magnification CCD camera. The high-magnification CCD camera is fixed on the optical table (Xo) or on the Z-axis table for the projection lens of the optical table (Xo). The Yr axis was moved by 400 [mm], and the θ axis (θr) of the receptor stage was used to adjust the deviation of the alignment line Y in the X axis direction within 1 [μm]. In addition, the moving distance of the table at this time is within the range of the effective stroke of the table, and the amount of deviation that should be allowed to vary varies according to the required transfer accuracy. (Same below)
2）AR（X）與Xd的平行度（Yr與Xd的垂直度）2) The parallelism of AR (X) and Xd (the perpendicularity of Yr and Xd)
接著，使用通過上述方式調整了的調整基板AR的對準線X，通過高倍率CCD照相機邊觀察邊調整供體台的X軸（Xd）與受體台的Y軸（Yr）的垂直度，所述高倍率CCD照相機同樣固定在光學台（Xo）上或設置於光學台（Xo）的投影透鏡用的Z軸臺上。使所述Xd軸移動400[mm]，以使對準線X的Y軸方向的偏差量在1[μm]以內的方式使用所述G1與Xd之間的轉動調整機構調整兩者的安裝角度，並且調整G1與Xd亦即Xd相對於Yr的安裝角度。Next, using the alignment line X of the adjustment substrate AR adjusted in the above manner, the perpendicularity of the X axis (Xd) of the donor stage and the Y axis (Yr) of the acceptor stage is adjusted while observing with a high-magnification CCD camera, The high-magnification CCD camera is also fixed on the optical table (Xo) or on the Z-axis table for the projection lens of the optical table (Xo). Move the Xd axis by 400 [mm], and adjust the mounting angle of the G1 and Xd using the rotation adjustment mechanism between the G1 and Xd so that the deviation of the alignment line X in the Y axis direction is within 1 [μm] , And adjust the installation angle of G1 and Xd, that is, Xd relative to Yr.
3）AR（X）與Xo的平行度（Yr與Xo的垂直度、Xd與Xo的平行度）3) The parallelism of AR (X) and Xo (the perpendicularity of Yr and Xo, the parallelism of Xd and Xo)
使用通過上述方式調整了的調整基板AR的對準線X，通過高倍率CCD照相機邊觀察邊調整光學台（Xo）與供體台的X軸（Xd）的平行度，所述高倍率CCD照相機固定在光學台（Xo）上或設置於該光學台（Xo）的投影透鏡用的Z軸臺上。使所述Xo軸移動200[mm]，以使對準線X的Y軸方向的偏差量在0.5[μm]以內的方式通過兩者間的轉動調整機構調整光學台（Xo）相對於供體台的X軸（Xd）的平行度。Using the alignment line X of the adjustment substrate AR adjusted in the above manner, the parallelism of the X-axis (Xd) of the optical table (Xo) and the donor table is adjusted by observation with a high-magnification CCD camera. It is fixed on the optical table (Xo) or installed on the Z-axis table for the projection lens of the optical table (Xo). The Xo axis is moved by 200 [mm], and the optical table (Xo) is adjusted relative to the donor by the rotation adjustment mechanism between the two so that the amount of deviation of the alignment X in the Y axis direction is within 0.5 [μm]. The parallelism of the X axis (Xd) of the stage.
4）Yd與AD（Y）的平行度4) Parallelism of Yd and AD (Y)
為了調整供體台的Y軸（Yd）與調整基板AD上的對準線Y的平行度，通過高倍率CCD照相機觀察保持在供體台的θ軸（θd）上的調整基板AD，所述高倍率CCD照相機固定在光學台（Xo）上或設置於該光學台（Xo）的投影透鏡用的Z軸臺上。使所述Yd軸移動200[mm]，以使對準線Y的X軸方向的偏差量在0.5[μm]以內的方式使用供體台的θ軸（θd）進行調整。In order to adjust the parallelism of the Y axis (Yd) of the donor stage and the alignment line Y on the adjustment substrate AD, the adjustment substrate AD held on the θ axis (θd) of the donor stage is observed by a high-magnification CCD camera, The high-magnification CCD camera is fixed on the optical table (Xo) or on the Z-axis table for the projection lens of the optical table (Xo). The Yd axis was moved by 200 [mm], and adjusted so that the deviation amount of the alignment line Y in the X axis direction was within 0.5 [μm] using the θ axis (θd) of the donor table.
5）AD（X）與Xo的平行度（AD（X）與Xd的平行度、Xd與Yd的垂直度）5) Parallelism of AD (X) and Xo (parallelism of AD (X) and Xd, perpendicularity of Xd and Yd)
為了調整供體台的X軸（Xd）與供體台的Y軸（Yd）的垂直度，通過高倍率CCD照相機觀察調整基板AD上的對準線X，所述高倍率CCD照相機固定在已對與供體台的X軸（Xd）的平行度進行了調整的光學台（Xo）上或設置於該光學台（Xo）的投影透鏡用的Z軸臺上。使該光學台（Xo）移動200[mm]，以使對準線X的Y軸方向的偏差量在0.5[μm]以內的方式通過兩者間的轉動調整機構來調整與懸掛設置於供體台的X軸（Xd）上的供體台的Y軸（Yd）的垂直度。In order to adjust the perpendicularity of the X axis (Xd) of the donor stage and the Y axis (Yd) of the donor stage, the alignment line X on the adjustment substrate AD is observed by a high-magnification CCD camera, which is fixed at the The optical table (Xo) whose parallelism with the X-axis (Xd) of the donor table is adjusted or the Z-axis table for the projection lens provided on the optical table (Xo) is adjusted. Move the optical table (Xo) by 200 [mm], and adjust the suspension to the donor by rotating the adjustment mechanism between the two so that the amount of deviation of the alignment X in the Y-axis direction is within 0.5 [μm] The perpendicularity of the Y axis (Yd) of the donor table on the X axis (Xd) of the table.
6）AD（Y）與Yr的平行度（Yd與Yr的平行度）6) Parallelism of AD (Y) and Yr (parallelism of Yd and Yr)
最後，為了確認供體台的Y軸（Yd）與受體台的Y軸（Yr）的平行度，在供體台的Y軸（Yd）上安裝高倍率CCD照相機，觀察放置在對置的受體臺上的調整基板AR的對準線Y。此時，預先取下調整基板AD。移動供體台的X軸（Xd），以使所述高倍率CCD照相機能夠觀察受體台的任意一端。接著，使供體台的Y軸（Yd）移動400[mm]，確認對準線Y的X軸方向的偏差量是否在1[μm]以內。此外，為了對受體台的另一端也進行同樣的確認，在使Xd移動到該另一端之後，再使Yd移動400[mm]，確認對準線Y的X軸方向的偏差量在1[μm]以內。另外，也可以使Yd和Yr並進並觀察對準標記的位置變化。Finally, in order to confirm the parallelism of the Y-axis (Yd) of the donor table and the Y-axis (Yr) of the acceptor table, install a high-magnification CCD camera on the Y-axis (Yd) of the donor table, and observe the The alignment line Y of the adjustment substrate AR on the receiver stage. At this time, the adjustment substrate AD is removed in advance. The X axis (Xd) of the donor stage is moved so that the high-magnification CCD camera can observe either end of the recipient stage. Next, the Y axis (Yd) of the donor table was moved by 400 [mm], and it was confirmed whether the amount of deviation in the X axis direction of the alignment line Y was within 1 [μm]. In addition, in order to perform the same confirmation on the other end of the receiver stage, after moving Xd to the other end, Yd was moved by 400 [mm], and it was confirmed that the deviation amount of the alignment line Y in the X-axis direction was 1[ μm]. In addition, Yd and Yr may be moved together to observe the change in the position of the alignment mark.
另外，在將高倍率CCD照相機安裝在供體台的Y軸（Yd）上的情況下，根據供體台的X軸的位置和石平臺1的形狀（開口），存在該高倍率CCD照相機與它們接觸的可能性。在該情況下，不將高倍率CCD照相機安裝在Yd上而是安裝在受體台的Z軸（Zr）上，通過使受體台的Y軸（Yr）移動200[mm]，也能夠觀察調整基板AD的對準線Y並確認其X軸方向的偏差量。In addition, when the high-magnification CCD camera is mounted on the Y-axis (Yd) of the donor stage, the high-magnification CCD camera and the shape of the stone platform 1 (opening) depend on the position of the X-axis of the donor stage. The possibility of their contact. In this case, the high-magnification CCD camera is not mounted on Yd but on the Z axis (Zr) of the receiver stage. By moving the Y axis (Yr) of the receiver stage by 200 [mm], it is also possible to observe Adjust the alignment line Y of the substrate AD and confirm the amount of deviation in the X-axis direction.
由於石平臺1（G1）和石平臺2獨立地支承各台，並且Yd懸掛設置於設置在G1上的Xd，所以雖然不能直接調整Yr與Yd的平行度，但是能夠如上所述一步一步地以[μrad]數量級進行Yr與Yd的平行度的調整。另外，由於以所述1）至6）的順序按照調整步驟，平行度（垂直度）的誤差累積，所以理想的是以將初期階段的容許偏差量抑制為盡可能小的方式進行調整。此外，所述1）至6）的調整步驟雖然記載了XY平面的各台的平行度和垂直度的調整，但是也需要進行其它軸（X軸和Y軸）的調整。Since the stone platform 1 (G1) and the
接著，參照圖9A至9C，說明本實施例1的轉移時的供體基板和受體基板的掃描。在此，圖9A至9C的俯視是操作者位於這些圖的左側且供體基板（D）和受體基板（R）相對於該操作者沿前後進行掃描的圖。Next, referring to FIGS. 9A to 9C, the scanning of the donor substrate and the acceptor substrate at the time of transfer in the first embodiment will be described. Here, the top views of FIGS. 9A to 9C are diagrams in which the operator is located on the left side of these drawings and the donor substrate (D) and the acceptor substrate (R) are scanned back and forth with respect to the operator.
首先，在供體基板的整個表面上測量吸附並設置在供體台的θ軸（θd）上的供體基板的彎曲量，並將其與位置資訊一起作為二維資料進行製圖。該資訊用作與在轉移工序中移動的供體台的X軸（Xd）和Y軸（Yd）對應的受體台的Z軸（Zr）的修正量。First, the amount of bending of the donor substrate adsorbed and set on the θ axis (θd) of the donor table is measured on the entire surface of the donor substrate, and this is plotted as two-dimensional data together with the position information. This information is used as the correction amount of the Z axis (Zr) of the acceptor table corresponding to the X axis (Xd) and Y axis (Yd) of the donor table moved in the transfer process.
此外，在以下的說明中，為了便於說明，把從操作者觀察時受體基板（R）和供體基板（D）的左邊眼前側的規定位置定義為各基板的原點。此外，將向受體基板的原點照射鐳射時的光學台（Xo）和受體台（Yr、θr）的位置分別定義為原點。此外，在供體基板中，將所述鐳射（LS）照射時的供體台（Xd、Yd、θd）的位置也定義為各自的原點。但是，各台的原點並不限定於其行程範圍的一端，是用於此後的轉移工序和基板的取下而留出移動的行程部分的位置。In the following description, for convenience of explanation, a predetermined position on the front side of the left eye of the acceptor substrate (R) and the donor substrate (D) when viewed from the operator is defined as the origin of each substrate. In addition, the positions of the optical table (Xo) and the receiver table (Yr, θr) when irradiating laser to the origin of the receptor substrate are defined as the origin. In addition, in the donor substrate, the positions of the donor tables (Xd, Yd, θd) during the laser (LS) irradiation are also defined as the respective origins. However, the origin of each stage is not limited to one end of its stroke range, and is the position of the stroke portion used for the subsequent transfer process and removal of the substrate to allow movement.
圖9A表示向位於原點位置的供體基板（D）和受體基板（R）照射鐳射（LS）的最初脈衝的情況。在此，圖示了側視（側視圖）和俯視（俯視圖）兩者。單點劃線表示鐳射通過縮小投影光學系統向對象物（S）照射的情況，接受了該照射的10×10[μm]的區域的光吸收層（省略圖示）吸收鐳射，消融（ablation）並產生衝擊波，由此相同區域的對象物被轉移到對置的受體基板上。圖示的對象物雖然是三個，但是在本實施例1的情況下，合計300個對象物一次向受體基板轉移。FIG. 9A shows a case where the donor substrate (D) and the acceptor substrate (R) positioned at the origin are irradiated with the first pulse of laser (LS). Here, both a side view (side view) and a top view (top view) are shown. The one-dot chain line indicates that the laser is irradiating the object (S) through the reduced projection optical system. The light-absorbing layer (not shown) in the 10×10 [μm] area that has received the radiation absorbs the laser and ablation (ablation) Shock waves are generated, and objects in the same area are transferred to the opposite receiver substrate. Although there are three objects shown in the figure, in the case of the first embodiment, a total of 300 objects are transferred to the receptor substrate at a time.
在本實施例1中，鐳射裝置以200[Hz]振盪，此外，由於通過一次照射進行轉移，所以受體台（Yr）到下次的照射位置為止不使受體基板停止地以速度6[mm/s]向－Y方向進行掃描。In the first embodiment, the laser device oscillates at 200 [Hz], and since it is transferred by one irradiation, the receiver stage (Yr) does not stop the receiver substrate until the next irradiation position at a speed of 6[ mm/s] Scan in the -Y direction.
另一方面，供體台的Y軸（Yd）在實現與所述受體台的Y軸（Yr）的位置的同步的同時，不使供體基板停止地以速度3[mm/s]朝向相同的－Y方向進行掃描。即，Yd與Yr的移動速度比（齒輪比（gear ratio））是1：2。圖9B表示各基板移動後的第二次照射的情況。On the other hand, the Y-axis (Yd) of the donor table is synchronized with the Y-axis (Yr) position of the acceptor table while being oriented at a speed of 3 [mm/s] without stopping the donor substrate Scan in the same -Y direction. That is, the moving speed ratio (gear ratio) of Yd and Yr is 1:2. FIG. 9B shows the second irradiation after the movement of each substrate.
以Yr為基準（主（master））並將Yd作為從屬（從（slave）），使用台系統的齒輪指令，通過使兩個台進行齒輪模式同步動作來進行Yr與Yd的位置的同步。在控制系統中使用可程式設計的多軸控制裝置。Using Yr as a reference (master) and Yd as a slave (slave), the gear commands of the stage system are used to synchronize the positions of Yr and Yd by synchronizing the gear modes of the two stages. Use programmable multi-axis control devices in the control system.
此外，為了確定所述齒輪指令的齒輪比，使用由鐳射干涉計測量的台位置的實際測量值。安裝角錐稜鏡（Ic），將波長632.8[nm]的氦氖 (He-Ne)鐳射（IL）和受光部（圖5A中省略圖示）設置在石平臺2（或同等的不動位置）上，所述角錐稜鏡（Ic）與Yr的移動台一起移動且在受體基板的附近構成鐳射干涉計。同樣地，在Yd的移動台側面安裝角錐稜鏡，將干涉計用鐳射和受光部（圖5B中省略圖示）設置在Xd上。由此，實現各台的準確的位置同步。In addition, in order to determine the gear ratio of the gear command, the actual measurement value of the stage position measured by the laser interferometer is used. Install the pyramid cone (Ic), and install the He-Ne laser (IL) with a wavelength of 632.8 [nm] and the light-receiving part (not shown in FIG. 5A) on the stone platform 2 (or equivalent fixed position) , The pyramid (Ic) moves with the Yr mobile station and constitutes a laser interferometer in the vicinity of the receiver substrate. Similarly, a pyramid pyramid is mounted on the side of the mobile stage of Yd, and the interferometer laser and light-receiving unit (not shown in FIG. 5B) are provided on Xd. As a result, accurate position synchronization of each station is achieved.
如上所述，各台在原點的位置以已經成為穩定的等速度運動的方式從原點的眼前一側的位置開始加速。在該加速時間內和台到達原點為止的時間內，需要切斷雷射脈衝，以使鐳射不向供體基板照射。因此，從可程式設計的多軸控制裝置以高精度向鐳射裝置發送外部振盪觸發信號或高速光閘的動作開始觸發信號以及台驅動信號。As described above, each stage at the origin starts accelerating from the position on the front side of the origin in a manner that has become stable and moves at a constant speed. During this acceleration time and the time until the stage reaches the origin, the laser pulse needs to be cut off so that the laser does not irradiate the donor substrate. Therefore, a programmable multi-axis control device sends an external oscillation trigger signal or a high-speed shutter operation start trigger signal and a stage drive signal to the laser device with high accuracy.
此外，圖9C表示第三次照射的情況。從圖中可以看出如下情況：相對於供體基板（D）的移動距離，受體基板（R）的移動距離是兩倍。此後也同樣，受體基板和供體基板繼續移動。In addition, FIG. 9C shows the case of the third irradiation. It can be seen from the figure that the moving distance of the acceptor substrate (R) is twice the moving distance of the donor substrate (D). After that, the acceptor substrate and the donor substrate continue to move.
當供體基板向－Y方向掃描180[mm]並結束時，同樣地當受體基板向－Y方向掃描360[mm]並結束時，鐳射裝置的振盪暫時停止，或者用高速光閘切斷鐳射的照射。通過該距離的掃描，沿X軸方向排列300個的對象物沿受體基板的Y軸方向被轉移12000行合計360萬個。圖10表示該情況。When the donor substrate scans 180 [mm] in the -Y direction and ends, similarly when the recipient substrate scans 360 [mm] in the -Y direction and ends, the oscillation of the laser device is temporarily stopped or cut off with a high-speed shutter Laser irradiation. By scanning at this distance, 300 objects aligned in the X-axis direction are transferred along the Y-axis direction of the receiver substrate by 12,000 lines, for a total of 3.6 million. Fig. 10 shows this situation.
在所述停止時間內，受體台的Y軸（Yr）和供體台的Y軸（Yd）都返回原點。（但是考慮下次掃描的加速距離。以下相同）另一方面，供體台的X軸（Xd）與之前的原點相比返回到－9[mm]的位置。此外，從新的區域開始再次開始轉移工序。以下，反復進行上述動作。During the stop time, both the Y axis (Yr) of the acceptor table and the Y axis (Yd) of the donor table return to the origin. (However, the acceleration distance for the next scan is considered. The following is the same.) On the other hand, the X axis (Xd) of the donor table returns to the position of -9 [mm] compared to the previous origin. In addition, the transfer process starts again from a new area. Hereinafter, the above operation is repeated.
圖11表示在Xd的－9[mm]×20次的步驟（step）移動結束後，這次從之前的原點（用虛線圖示）向－X方向返回到15[μm]的位置（用實線圖示），將該點作為新的原點並開始同樣的動作之前的情況。此後，反復進行兩個台的Y軸掃描（180[mm]（Yd）和360[mm]（Yr））與Xd的－9[mm]×20次的步驟操作。由此，在最初的Xd的180[mm]掃描（－9[mm]的20次步驟移動）期間向未受到鐳射的照射的區域（圖中用單點劃線圖示了下次的鐳射（LS）的照射預定區域）照射鐳射，能夠不浪費且更多地向受體基板轉移供體基板上的對象物。Fig. 11 shows that after the movement of -9 [mm] × 20 steps of Xd is completed, this time it returns to the position of 15 [μm] in the -X direction from the previous origin (shown with a dotted line) (use Line icon), using this point as the new origin and before starting the same action. Thereafter, the Y-axis scanning (180 [mm] (Yd) and 360 [mm] (Yr)) and Xd of -9 [mm] × 20 times were repeated for the two stages. As a result, during the first Xd 180 [mm] scan (-20 steps of -9 [mm]), the area that has not been irradiated with laser (the single-dot chain line in the figure shows the next laser ( LS) The area to be irradiated) Irradiation of laser can transfer the object on the donor substrate to the acceptor substrate without waste and more.
另外，大約的加工時間是360[mm]/6[mm/s]×40[次]＝2400[s]。另外，在該時間中不包含受體台的Y軸（Yr）移動其加減速所需要的距離的時間和每次Y軸掃描到返回到原點為止的時間。此外，通過將準分子雷射器的重複頻率提高到1[kHz]，上述加工時間能夠縮短1/5。In addition, the approximate processing time is 360[mm]/6[mm/s]×40[times]=2400[s]. In addition, this time does not include the time required for the Y-axis (Yr) of the receiver table to move its acceleration and deceleration and the time until the Y-axis scan returns to the origin. In addition, by increasing the repetition frequency of the excimer laser to 1 [kHz], the above processing time can be shortened by 1/5.
圖12表示通過本實施例1的裝置結構，以同步並進的方式將受體台的Y軸（Yr）作為基準（主），以移動速度150[mm/s] 使受體台移動400[mm]的距離，且將供體台的Y軸（Yd）作為從屬，（從）以移動速度75[mm/s] 使供體台移動200[mm]的距離的情況下，兩個台的同步位置誤差。具體地說，將橫軸作為與受體台的移動速度對應的經過時間描繪了誤差量（δYr）與誤差量（δYd）的差（ΔYdr＝δYd－δYr），所述誤差量（δYr）是在作為基準（主）的Yr上從其線性編碼器得到的位置資訊與通過鐳射干涉計測量到的位置資訊的誤差量，所述誤差量（δYd）是在作為以上述1/2的速度同步移動的從屬（從）的Yd上從其線性編碼器得到的位置資訊與通過鐳射干涉計測量到的位置資訊的誤差量。從其結果可以看出，在400mm的移動距離內達成了±1[μm]以內的位置同步精度。Fig. 12 shows the device structure of the first embodiment, which uses the Y axis (Yr) of the receiver stage as the reference (main) in a synchronized and synchronized manner, and moves the receiver stage by 400 [mm at a moving speed of 150 [mm/s] ], and the Y-axis (Yd) of the donor table as a slave, (slave) to move the donor table 200 [mm] at a moving speed of 75 [mm/s], the synchronization of the two stations Position error. Specifically, using the horizontal axis as the elapsed time corresponding to the moving speed of the receiver table, the difference between the error amount (δYr) and the error amount (δYd) (ΔYdr=δYd−δYr) is plotted, and the error amount (δYr) is The amount of error between the positional information obtained from its linear encoder on Yr as a reference (main) and the positional information measured by a laser interferometer, the error amount (δYd) is synchronized as the above-mentioned 1/2 speed The amount of error between the position information obtained from its linear encoder on the moving slave (slave) Yd and the position information measured by the laser interferometer. From the results, it can be seen that the position synchronization accuracy within ±1 [μm] is achieved within the moving distance of 400 mm.
如上所述，本實施例1的對象物向受體基板的轉移圖案（pattern）是以間隔30[μm] 將10×10[μm]以矩陣狀進行轉移，但是例如如果將該間隔設為60[μm]，則能夠用一個供體基板進行四個受體基板的轉移。As described above, the transfer pattern of the object of the first embodiment to the receiver substrate is transferred in a matrix of 10×10 [μm] at intervals of 30 [μm], but if the interval is set to 60, for example [μm], four donor substrates can be transferred with one donor substrate.
[實施例2][Example 2]
在本實施例2中與實施例1中供體基板表面上的對象物是一片的層狀態不同，是如下的實施例：將在相同尺寸為200×200[mm]的供體基板上形成為矩陣狀的、一個形狀為10×10[μm]、間隔為15[μm]的合計144百萬個的對象物，以供體基板的1/2的密度即以30[μm]的間隔且以相同的矩陣狀向尺寸為400×400[mm]的受體基板轉移。In this Example 2, the layer state of the object on the surface of the donor substrate in Example 1 is one piece, which is the following example: it is formed on a donor substrate of the same size of 200×200 [mm] as A matrix of 144 million objects with a shape of 10×10 [μm] and an interval of 15 [μm], at a density of 1/2 of the donor substrate, that is, at an interval of 30 [μm] and The same matrix is transferred to a receiver substrate with a size of 400×400 [mm].
最終，向受體基板轉移的對象物的配置情況與實施例1相同，但是不同點在於，在本實施例2中，預先在供體基板上也以兩倍的密度同樣配置有對象物，並且將其以±1[μm]的位置精度向受體基板上轉移。此外，在該情況下，與實施例1相比，進一步嚴格要求供體台的Y軸（Yd）和受體台的Y軸（Yr）的位置同步精度。Finally, the arrangement of the objects transferred to the acceptor substrate is the same as in Example 1, but the difference is that in this Example 2, the objects are similarly arranged on the donor substrate at twice the density, and This was transferred onto the receiver substrate with a position accuracy of ±1 [μm]. In this case, compared with Example 1, the position synchronization accuracy of the Y axis (Yd) of the donor table and the Y axis (Yr) of the receiver table is more strictly required.
在圖13A至圖13C中表示與實施例1同樣，在位於原點位置的供體基板（D）和受體基板（R）上從照射鐳射（LS）的最初的脈衝的情況到第三次照射的情況。FIGS. 13A to 13C show the case where the first pulse of laser (LS) is irradiated to the third time on the donor substrate (D) and the acceptor substrate (R) at the origin position, as in the first embodiment. The situation of exposure.
[實施例3][Example 3]
在本實施例3中，將供體基板表面上的對象物向受體基板轉移的方法與實施例1或實施例2相同。另一方面，各台的Y軸彼此的平行度和X軸彼此的平行度、以及各Y軸與X軸的垂直度的調整方法與所述實施例不同。即，實施例1中記載的調整方法如下：為了調整受體台的Y軸（Yr）與供體台的Y軸（Yd）的平行度，進行所述1）至6）的調整步驟，相對於此，在本實施例3中，在調整步驟早期階段調整上述Yr與Yd的平行度。In this Example 3, the method of transferring the object on the surface of the donor substrate to the acceptor substrate is the same as in Example 1 or Example 2. On the other hand, the method of adjusting the parallelism of the Y-axis and the parallelism of the X-axis of each stage, and the perpendicularity of each Y-axis and the X-axis are different from the above-described embodiment. That is, the adjustment method described in Example 1 is as follows: In order to adjust the parallelism of the Y axis (Yr) of the receiver table and the Y axis (Yd) of the donor table, the adjustment steps of 1) to 6) above are performed, relative Here, in the third embodiment, the parallelism of Yr and Yd is adjusted at an early stage of the adjustment step.
1）Yr、θr、Zr的直線度1) Straightness of Yr, θr, Zr
該調整步驟是作為與所述實施例1和實施例2共通的前提的調整步驟。使用鐳射干涉計等調整設置在石平臺2（G2）上的受體台的Y軸（Yr）和設置在其上的θ軸（θr）、以及同樣的Z軸（Zr）和受體基板的支架的直線度（相對於作為將水平面作為XY平面時的鉛垂方向的Z軸的直線度）。另外，基本上在該調整後，未進行有可能影響受體台組的垂直度的調整，其它台的調整全部以上述受體台組的例如其最上表面為基準進行。This adjustment step is an adjustment step that is common to the first and second embodiments. Use a laser interferometer, etc. to adjust the Y axis (Yr) and the θ axis (θr) of the receiver table installed on the stone platform 2 (G2), as well as the Z axis (Zr) and the receiver substrate. Straightness of the bracket (straightness with respect to the Z axis in the vertical direction when the horizontal plane is the XY plane). In addition, basically, after this adjustment, no adjustment that may affect the verticality of the receptor stage group is performed, and all other stage adjustments are performed based on, for example, the uppermost surface of the receptor stage group.
2）Yr與AR（Y）的平行度（Yr與AR（X）的垂直度）2) The parallelism of Yr and AR (Y) (the perpendicularity of Yr and AR (X))
與實施例1的調整步驟1）同樣，調整受體台的Y軸（Yr）與調整基板AR上的對準線Y的平行度。由此，也調整了Yr與對準線X的垂直度。另外，在不使用調整基板AR而使用在Yr上進行直接描繪等而得到的對準線或對準標記的情況下，可以省略該調整步驟1）。As in the adjustment step 1) of Example 1, the parallelism of the Y axis (Yr) of the receiver stage and the alignment line Y on the adjustment substrate AR is adjusted. Thus, the perpendicularity of Yr and the alignment line X is also adjusted. In addition, when the alignment line or alignment mark obtained by directly drawing on Yr or the like is used without using the adjustment substrate AR, this adjustment step 1) may be omitted.
3）AR（X）與Xd的平行度（Yr與Xd的垂直度）3) The parallelism of AR (X) and Xd (the perpendicularity of Yr and Xd)
接著，通過設置於放置在供體台的X軸（Xd）上的光學台（Xo）的高倍率CCD照相機觀察調整基板AR的對準線X。上述高倍率CCD照相機的Z軸方向的位置是由投影光學系統的設計決定的，但是在本實施例3中，使用保持投影透鏡的Z軸台（Zl）固定在投影透鏡（Pl）的位置附近。使Xd移動400[mm]，以對準線X的Y軸方向的偏差量在0.3[μm]以內的方式使用轉動調整機構調整Xd相對於石平臺1的安裝角度亦即Xd相對於Yr的垂直度。Next, the alignment line X of the adjustment substrate AR is observed by a high-magnification CCD camera provided on an optical table (Xo) placed on the X axis (Xd) of the donor table. The position of the high-magnification CCD camera in the Z-axis direction is determined by the design of the projection optical system. However, in Embodiment 3, the Z-axis stage (Zl) holding the projection lens is fixed near the position of the projection lens (Pl). . Move Xd by 400 [mm], and use the rotation adjustment mechanism to adjust the installation angle of Xd relative to the stone platform 1, that is, the perpendicularity of Xd relative to Yr, using the rotation adjustment mechanism so that the deviation of the alignment line X in the Y-axis direction is within 0.3 [μm] degree.
4）Yr與Yd的YZ平面內的平行度4) Parallelism in YZ plane of Yr and Yd
在實施例1的記載中，省略了其它軸系（X軸和Y軸）的調整步驟的記載，在此，簡單說明X軸系亦即YZ平面內的平行度的調整步驟。使用設置在受體台的Z軸（Zr）或其它部位上的高度感測器觀察供體台的Y軸（Yd）的下表面。使Yr與Yd同時同步移動（並行移動）200[mm]以上的相同距離，觀察間隙感測器的測量值（Zr與Yd的距離）的變化。以使該變化在5[μm]以內或與投影透鏡的成像的焦點深度相比在足夠小的範圍內的方式，將墊板***設置在Xd與Yd間的轉動調整機構和、Yd或Xd之間，調整Yr與Yd間的YZ平面內的平行度。In the description of Example 1, the description of the adjustment steps of other axis systems (X axis and Y axis) is omitted, and here, the adjustment steps of the parallelism in the YZ plane, that is, the X axis system, are briefly described. Observe the lower surface of the Y-axis (Yd) of the donor table using a height sensor placed on the Z-axis (Zr) of the receiver table or elsewhere. Simultaneously move Yr and Yd simultaneously (parallel movement) at the same distance of 200 [mm] or more, and observe the change in the measured value of the gap sensor (the distance between Zr and Yd). In such a way that the change is within 5 [μm] or within a sufficiently small range compared to the focal depth of the imaging of the projection lens, insert the backing plate into the rotation adjustment mechanism provided between Xd and Yd, Yd or Xd Time, adjust the parallelism in the YZ plane between Yr and Yd.
5）Yr與Yd的平行度5) Parallelism of Yr and Yd
使用設置在Zr或其它部位的高倍率CCD照相機，觀察設置在Yd的下表面上的圖案匹配用的對準標記。在使Yr與Yd同步移動（並行移動）相同距離、圖案匹配的對準標記圖像（十字標記等）的位置沿X軸方向移動的情況下，使用設置在Xd與Yd間的轉動調整機構進行調整，以對其進行修正。另外，代替對準標記，也可以使用安裝在供體台的Y軸上的調整基板AD的對準線Y。Using a high-magnification CCD camera installed in Zr or other locations, observe the alignment marks for pattern matching provided on the lower surface of Yd. When moving the position of the alignment mark image (cross mark, etc.) of Yr and Yd moving synchronously (parallel movement) at the same distance and pattern matching, along the X-axis direction, use the rotation adjustment mechanism provided between Xd and Yd Adjust to correct it. In addition, instead of the alignment mark, the alignment line Y of the adjustment substrate AD mounted on the Y axis of the donor stage may be used.
6）Yr與Xo的垂直度6) The perpendicularity of Yr and Xo
通過設置在光學台（Xo）上的高倍率CCD照相機，觀察通過所述調整步驟1）調整了與受體台的Y軸（Yr）的垂直度的調整基板AR的對準線X。使Xo移動400[mm]，以使對準線X的Y軸方向的偏差量在0.3[μm]以內的方式，使用設置在兩者間的轉動調整機構調整Xo相對於Xd的安裝角度。With the high-magnification CCD camera installed on the optical table (Xo), the alignment line X of the adjustment substrate AR whose verticality with the Y axis (Yr) of the receiver table was adjusted through the adjustment step 1) was observed. Move Xo by 400 [mm] to adjust the mounting angle of Xo relative to Xd using a rotation adjustment mechanism provided between the two so that the amount of deviation of the alignment line X in the Y-axis direction is within 0.3 [μm].
[實施例4][Example 4]
圖2A表示本實施例4的轉移裝置的主要結構部分。是將本發明中的第七發明作為基本結構的實施例。另外，在圖2A至2C中，省略了鐳射裝置、控制裝置和其它監視器等的圖示（這些全部與實施例1相同），圖中表示了X軸、Y軸和Z軸方向。此外，在本實施例4中使用的供體基板、受體基板、以及轉移對象物的供體基板上的配置和向受體基板轉移後的配置與實施例2相同。FIG. 2A shows the main structural parts of the transfer device of the fourth embodiment. This is an embodiment in which the seventh invention of the present invention is the basic structure. In addition, in FIGS. 2A to 2C, illustrations of the laser device, the control device, other monitors, and the like are omitted (these are all the same as in the first embodiment), and the X-axis, Y-axis, and Z-axis directions are shown in the figures. In addition, the arrangement on the donor substrate, the acceptor substrate, and the donor substrate to be transferred used in the present Example 4 and the arrangement after the transfer to the acceptor substrate are the same as in Example 2.
脈衝鐳射從準分子雷射器裝置射出並照射到供體基板上的轉移對象物為止的光學系統的情況如以下所記載的，除了因分別由圖1A和圖2A所示的各台組的構建的不同而產生的部分以外，與實施例1相同。即，在圖1A至1C所示的第六發明的轉移裝置的情況下，在石平臺1（G1）上依次配置供體台的X軸（Xd）並在其上配置光學台（Xo），相對於此，在圖2A至2C所示的第七發明的轉移裝置的情況下，這些台組的構建的不同點在於：在G1上放置Xo且在G1的下方懸掛設置Xd。The state of the optical system until the pulse laser is emitted from the excimer laser device and irradiated to the transfer target object on the donor substrate is as follows, except for the construction of each stage group shown in FIGS. 1A and 2A It is the same as that of Example 1 except for the difference. That is, in the case of the transfer device of the sixth invention shown in FIGS. 1A to 1C, the X axis (Xd) of the donor table is sequentially arranged on the stone platform 1 (G1), and the optical table (Xo) is arranged thereon. On the other hand, in the case of the transfer device of the seventh invention shown in FIGS. 2A to 2C, the difference in the construction of these table groups is that Xo is placed on G1 and Xd is suspended under G1.
來自準分子雷射器的射出光射入望遠鏡光學系統，並向其前方的整形光學系統傳播。如圖2A所示，上述整形光學系統在沿X軸方向移動的光學台（Xo）上設置成與其光軸平行。此外，Xo放置在花崗岩製的石平臺1（G1）上，在兩者間具有轉動調整機構（RP）。在此，Xo與放置在與G1不同的石平臺2（G2）上的受體台的Y軸（Yr）成直角，並與供體台的X軸（Xd）平行。另外，射入整形光學系統之前的鐳射由望遠鏡光學系統調整成與Xo的移動無關的大體相同的形狀（大體25×25[mm]（縱×橫，FWHM））。The emitted light from the excimer laser enters the telescope optical system and propagates to the shaping optical system in front of it. As shown in FIG. 2A, the above-mentioned shaping optical system is provided on an optical table (Xo) moving in the X-axis direction so as to be parallel to its optical axis. In addition, Xo is placed on a granite stone platform 1 (G1) with a rotation adjustment mechanism (RP) in between. Here, Xo is at right angles to the Y axis (Yr) of the receiver table placed on the stone platform 2 (G2) different from G1 and parallel to the X axis (Xd) of the donor table. In addition, the laser beam before being injected into the shaping optical system is adjusted by the telescope optical system to a substantially same shape regardless of the movement of Xo (approximately 25×25 [mm] (vertical×horizontal, FWHM)).
供體台的X軸（Xd）懸掛設置在G1的下方，還懸掛設置有供體台的Y軸（Yd）。此外，在它們之間具有轉動調整機構。在圖2B中通過側視表示Xo和Xd相對於G1移動相同距離的情況。由此，能夠不改變Xo和Xd的X軸上的相對位置地改變相對於Yd的X軸方向的位置。此外，在圖2C中通過側視表示僅Xo相對於G1移動的情況。由此，能夠改變Xd和Xo的X軸上的相對位置。The X axis (Xd) of the donor table is suspended below G1, and the Y axis (Yd) of the donor table is also suspended. In addition, there is a rotation adjustment mechanism between them. In FIG. 2B, the side view shows the case where Xo and Xd move the same distance relative to G1. This makes it possible to change the position in the X-axis direction with respect to Yd without changing the relative position on the X-axis of Xo and Xd. In addition, the case where only Xo moves relative to G1 is shown by a side view in FIG. 2C. Thereby, the relative position on the X axis of Xd and Xo can be changed.
作為其它縮小投影光學系統的場鏡（F）、光罩（M）和投影透鏡（Pl）的詳細情況與實施例1相同，從投影透鏡射出的鐳射從供體基板的背面射入，並以描繪在所述光罩上的圖案的1/5的縮小尺寸，準確地朝向形成在其表面（下表面）上的轉移對象物投影。此外，供體基板表面上的成像的情況與實施例1同樣，由共焦點光束輪廓儀進行。The details of the field lens (F), the reticle (M), and the projection lens (Pl), which are other reduced projection optical systems, are the same as in Example 1. The laser light emitted from the projection lens enters from the back of the donor substrate, and The reduced size of 1/5 of the pattern drawn on the reticle is accurately projected toward the transfer object formed on its surface (lower surface). In addition, the imaging on the surface of the donor substrate is performed by the confocal beam profiler as in Embodiment 1.
基於以如上所述的方式向配置在供體基板的表面上的轉移對象物進行縮小投影的光罩圖案，當將該轉移對象物向對置的受體基板轉移時，供體基板和受體基板以何種方式進行掃描、轉移對象物以何種方式向受體基板上轉移與圖6、圖10、圖11和圖13A至13C相同，此外，受體台的Y軸（Yr）和供體台的Y軸（Yd）的移動的位置同步精度與實施例1中所述的圖12相同。Based on the reticle pattern that is reduced and projected onto the transfer object arranged on the surface of the donor substrate as described above, when the transfer object is transferred to the opposite acceptor substrate, the donor substrate and the acceptor The manner in which the substrate is scanned and the method in which the transfer object is transferred onto the receiver substrate are the same as in FIGS. 6, 10, 11 and 13A to 13C. In addition, the Y axis (Yr) of the receiver stage and the supply The position synchronization accuracy of the Y-axis (Yd) movement of the body table is the same as FIG. 12 described in the first embodiment.
此外，各台的Y軸彼此的平行度和X軸彼此的平行度、以及各Y軸和X軸的垂直度的調整方法與實施例3相同。即，將進行了直線度調整的受體台的Y軸（Yr）作為調整的基準，通過固定在受體台的Z軸（Zr）上的高倍率CCD照相機觀察Yr與從石平臺1（G1）懸掛設置的供體台的X軸（Xd）的垂直度，並通過G1和Xd間的轉動調整機構（RP）進行調整。此外，通過相同的高倍率CCD照相機觀察懸掛設置於調整後的Xd上的供體台的Y軸（Yd）與Yr的平行度，並通過Xd和Yd間的RP進行調整。最後，通過與Xo一起移動的高倍率CCD觀察光學台（Xo）與Yr的垂直度，並通過G1與Xo間的RP進行調整。In addition, the method of adjusting the parallelism of the Y axis and the parallelism of the X axis of each stage, and the perpendicularity of each Y axis and the X axis are the same as in Example 3. That is, the Y-axis (Yr) of the receiver table with the straightness adjusted is used as the adjustment reference, and Yr and the slave platform 1 (G1) are observed by a high-magnification CCD camera fixed on the Z-axis (Zr) of the receiver table. ) The verticality of the X axis (Xd) of the suspended donor table is adjusted by the rotation adjustment mechanism (RP) between G1 and Xd. In addition, the parallelism of the Y axis (Yd) and Yr of the donor table suspended on the adjusted Xd was observed by the same high-magnification CCD camera, and adjusted by the RP between Xd and Yd. Finally, observe the perpendicularity of the optical table (Xo) and Yr through the high-magnification CCD moving with Xo, and adjust it through the RP between G1 and Xo.
[工業實用性][Industrial Applicability]
本發明能夠作為顯示器的製造裝置進行利用。The present invention can be used as a display manufacturing device.
1‧‧‧平臺2‧‧‧平臺3‧‧‧平臺11‧‧‧平臺12‧‧‧平臺AD‧‧‧供體台用調整用基板AR‧‧‧受體台用調整用基板BP‧‧‧共焦點光束輪廓儀CCD‧‧‧高倍率照相機D‧‧‧供體基板F‧‧‧場鏡G‧‧‧基礎平臺G1‧‧‧平臺1G11‧‧‧平台11G12‧‧‧平台12G2‧‧‧平台2G3‧‧‧平台3H‧‧‧整形光學系統Ic‧‧‧鐳射干涉計用角錐棱鏡IL‧‧‧鐳射干涉計用鐳射LS‧‧‧鐳射M‧‧‧光罩Pl‧‧‧投影透鏡R‧‧‧受體基板RP‧‧‧轉動調整機構S‧‧‧對象物TE‧‧‧望遠鏡Xd‧‧‧供體台的X軸Xo‧‧‧光學台（X軸）Yd‧‧‧供體台的Y軸Yl‧‧‧投影透鏡和照相機的切換台Yr‧‧‧受體台的Y軸Zl‧‧‧投影透鏡的Z軸台Zr‧‧‧受體台的Z軸θd‧‧‧供體台的θ軸θr‧‧‧受體台的θ軸1‧‧‧
圖1A表示本發明的轉移裝置的主要結構部分（側視圖）。（第二發明） 圖1B表示供體台的X軸在放置上光學台並從圖1A的狀態移動了的情況（側視圖）。 圖1C表示光學台從圖1B的狀態在供體台的X軸上移動了的情況（側視圖）。 圖1D是圖1C的俯視圖。 圖2A表示本發明的轉移裝置的主要結構部分（側視圖）。（第三發明） 圖2B表示供體台的X軸和光學台從圖2A的狀態在平臺1上移動了相同距離的情況（側視圖）。 圖2C表示僅光學台的X軸從圖2B的狀態在平臺1上移動了的情況（側視圖）。 圖3A表示用於G1和Xd之間的轉動調整機構的例子。 圖3B表示用於Xd和Yd之間的轉動調整機構的例子。 圖3C表示用於Xd和Xo之間的轉動調整機構的例子。 圖4表示根據受體基板的尺寸供體台應移動的範圍。 圖5A表示設置有受體台的Y軸用鐳射干涉計的情況。 圖5B表示設置有供體台的Y軸用鐳射干涉計的情況。 圖6表示形成在光罩上的圖案的例子。 圖7表示利用多列光罩圖案的轉移工序的情況。 圖8表示共焦點光束輪廓儀的監測的情況。 圖9A表示轉移工序的第一次照射。 圖9B表示轉移工序的第二次照射。 圖9C表示轉移工序的第三次照射。 圖10表示通過齒輪比1：2掃描一次後的受體基板的情況。 圖11表示供體台的X軸的步進掃描的情況。 圖12表示使受體台的Y軸和供體台的Y軸並進時的同步位置錯誤。 圖13A表示使用矩陣狀的供體基板的轉移工序的第一次照射。 圖13B表示使用矩陣狀的供體基板的轉移工序的第二次照射。 圖13C表示使用矩陣狀的供體基板的轉移工序的第三次照射。FIG. 1A shows a main structural part (side view) of the transfer device of the present invention. (Second Invention) FIG. 1B shows a case where the X-axis of the donor table is placed on the optical table and moved from the state of FIG. 1A (side view). FIG. 1C shows a case where the optical table has moved on the X axis of the donor table from the state of FIG. 1B (side view). FIG. 1D is a top view of FIG. 1C. 2A shows the main structural part (side view) of the transfer device of the present invention. (Third Invention) FIG. 2B shows a case where the X axis of the donor table and the optical table have moved the same distance on the stage 1 from the state of FIG. 2A (side view). FIG. 2C shows a case where only the X axis of the optical table has moved on the stage 1 from the state of FIG. 2B (side view). FIG. 3A shows an example of a rotation adjustment mechanism used between G1 and Xd. FIG. 3B shows an example of a rotation adjustment mechanism used between Xd and Yd. FIG. 3C shows an example of a rotation adjustment mechanism used between Xd and Xo. FIG. 4 shows the range in which the donor table should move according to the size of the acceptor substrate. FIG. 5A shows a case of a Y-axis laser interferometer provided with an acceptor table. FIG. 5B shows a case of a Y-axis laser interferometer provided with a donor table. FIG. 6 shows an example of the pattern formed on the photomask. FIG. 7 shows a case where a multi-row mask pattern transfer process is used. Fig. 8 shows the monitoring of the confocal beam profiler. FIG. 9A shows the first irradiation in the transfer process. FIG. 9B shows the second irradiation in the transfer process. FIG. 9C shows the third irradiation in the transfer process. FIG. 10 shows a case where the receiver substrate is scanned once with a gear ratio of 1:2. FIG. 11 shows the X-axis step scan of the donor stage. FIG. 12 shows that the synchronization position when the Y-axis of the receiver table and the Y-axis of the donor table go together is wrong. FIG. 13A shows the first irradiation in the transfer process using the matrix-shaped donor substrate. FIG. 13B shows the second irradiation in the transfer process using the matrix-shaped donor substrate. FIG. 13C shows the third irradiation in the transfer process using the matrix-shaped donor substrate.
BP‧‧‧共焦點光束輪廓儀 BP‧‧‧Confocal beam profiler
CCD‧‧‧高倍率照相機 CCD‧‧‧High magnification camera
D‧‧‧供體基板 D‧‧‧ donor substrate
F‧‧‧場鏡 F‧‧‧Field lens
G‧‧‧基礎平臺 G‧‧‧Basic platform
G1‧‧‧平臺1 G1‧‧‧Platform 1
G11‧‧‧平台11 G11‧‧‧Platform 11
G12‧‧‧平台12
G12‧‧‧
G2‧‧‧平台2
G2‧‧‧
H‧‧‧整形光學系統 H‧‧‧Shaping optical system
LS‧‧‧鐳射 LS‧‧‧Laser
M‧‧‧光罩 M‧‧‧mask
Pl‧‧‧投影透鏡 Pl‧‧‧Projection lens
R‧‧‧受體基板 R‧‧‧Receptor substrate
TE‧‧‧望遠鏡 TE‧‧‧Telescope
Xd‧‧‧供體台的X軸 Xd‧‧‧X axis of donor table
Xo‧‧‧光學台(X軸) Xo‧‧‧Optical stage (X axis)
Yd‧‧‧供體台的Y軸 Yd‧‧‧Y axis of donor table
Yl‧‧‧投影透鏡和照相機的切換台 Yl‧‧‧Projector lens and camera switcher
Yr‧‧‧受體台的Y軸 Yr‧‧‧Y axis of receiver stage
Zl‧‧‧投影透鏡的Z軸台 Zl‧‧‧Z axis stage of projection lens
Zr‧‧‧受體台的Z軸 Zr‧‧‧Z axis of receiver stage
θ d‧‧‧供體台的θ軸 θ d‧‧‧ donor axis
θ r‧‧‧受體台的θ軸 θ r‧‧‧Theta axis of receptor stage
Claims (17)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-116692 | 2018-06-20 | ||
| JP2018116692 | 2018-06-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202002358A true TW202002358A (en) | 2020-01-01 |
| TWI768072B TWI768072B (en) | 2022-06-21 |
Family
ID=68983359
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112111310A TWI827492B (en) | 2018-06-20 | 2018-06-27 | Transfer method and photomask |
| TW111131169A TWI801309B (en) | 2018-06-20 | 2018-06-27 | transfer device |
| TW107122157A TWI768072B (en) | 2018-06-20 | 2018-06-27 | Transfer device, method of use and method of adjustment |
| TW112145274A TW202412360A (en) | 2018-06-20 | 2018-06-27 | Lift device and method for using same |
| TW111119187A TWI784911B (en) | 2018-06-20 | 2018-06-27 | transfer device |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112111310A TWI827492B (en) | 2018-06-20 | 2018-06-27 | Transfer method and photomask |
| TW111131169A TWI801309B (en) | 2018-06-20 | 2018-06-27 | transfer device |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112145274A TW202412360A (en) | 2018-06-20 | 2018-06-27 | Lift device and method for using same |
| TW111119187A TWI784911B (en) | 2018-06-20 | 2018-06-27 | transfer device |
Country Status (3)
| Country | Link |
|---|---|
| CN (2) | CN117715492A (en) |
| TW (5) | TWI827492B (en) |
| WO (1) | WO2019244362A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7111916B1 (en) * | 2021-07-20 | 2022-08-02 | 信越化学工業株式会社 | Retransfer method and lift method |
| JP7255000B2 (en) * | 2021-07-20 | 2023-04-10 | 信越化学工業株式会社 | Defect removal method, lift method, photomask and lift system |
| CN113782650A (en) * | 2021-09-07 | 2021-12-10 | 苏州奕格飞半导体技术有限公司 | Wafer laser stripping device and method |
| JP7490848B2 (en) | 2022-06-15 | 2024-05-27 | 信越化学工業株式会社 | Laser processing method, photomask and laser processing system |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW448487B (en) * | 1997-11-22 | 2001-08-01 | Nippon Kogaku Kk | Exposure apparatus, exposure method and manufacturing method of device |
| JP3511359B2 (en) * | 1998-02-27 | 2004-03-29 | 三菱電機株式会社 | Laser processing equipment |
| US20030162108A1 (en) * | 2002-01-30 | 2003-08-28 | Eastman Kodak Company | Using spacer elements to make electroluminscent display devices |
| JP4411575B2 (en) * | 2002-04-25 | 2010-02-10 | セイコーエプソン株式会社 | Electronic device manufacturing equipment |
| EP3252533B1 (en) * | 2004-02-04 | 2019-04-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing a device |
| KR100635579B1 (en) * | 2004-12-20 | 2006-10-17 | 삼성에스디아이 주식회사 | laser induced thermal imaging apparatus, laser induced thermal imaging method using the apparatus and fabrication method of OLED using the apparatus |
| KR100793359B1 (en) * | 2006-05-03 | 2008-01-11 | 삼성에스디아이 주식회사 | Laser irridation apparatus, laser induced thermal imaging apparatus comprising the apparatus and fabrication method of OLED array substrate using the apparatus |
| JP2009199856A (en) * | 2008-02-21 | 2009-09-03 | Sony Corp | Organic thin film manufacturing device and method |
| WO2009110202A1 (en) * | 2008-03-07 | 2009-09-11 | 株式会社ニコン | Moving device and exposure device |
| KR20100062595A (en) * | 2008-12-02 | 2010-06-10 | 엘지디스플레이 주식회사 | Laser induced thermal imaging apparatus and fabricating method of oled |
| JP2013020768A (en) * | 2011-07-08 | 2013-01-31 | Ulvac Japan Ltd | Laser transfer device |
| KR101340617B1 (en) * | 2011-12-30 | 2013-12-11 | 엘아이지에이디피 주식회사 | Tray for donor film |
| KR102001226B1 (en) * | 2012-11-12 | 2019-07-25 | 삼성디스플레이 주식회사 | Laser induced thermal imaging apparatus and laser induced thermal imaging method |
| KR20140133741A (en) * | 2013-05-10 | 2014-11-20 | 삼성디스플레이 주식회사 | Liti mask and laser irradiation device including thereof |
| US10252507B2 (en) * | 2013-11-19 | 2019-04-09 | Rofin-Sinar Technologies Llc | Method and apparatus for forward deposition of material onto a substrate using burst ultrafast laser pulse energy |
| KR102078294B1 (en) * | 2016-09-30 | 2020-02-17 | 코닝 인코포레이티드 | Apparatus and method for laser machining transparent workpieces using non-axisymmetric beam spots |
-
2018
- 2018-06-26 WO PCT/JP2018/024113 patent/WO2019244362A1/en active Application Filing
- 2018-06-26 CN CN202410036703.3A patent/CN117715492A/en active Pending
- 2018-06-26 CN CN201880094255.5A patent/CN112272966B/en active Active
- 2018-06-27 TW TW112111310A patent/TWI827492B/en active
- 2018-06-27 TW TW111131169A patent/TWI801309B/en active
- 2018-06-27 TW TW107122157A patent/TWI768072B/en active
- 2018-06-27 TW TW112145274A patent/TW202412360A/en unknown
- 2018-06-27 TW TW111119187A patent/TWI784911B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TW202329505A (en) | 2023-07-16 |
| TW202412360A (en) | 2024-03-16 |
| TW202301723A (en) | 2023-01-01 |
| CN117715492A (en) | 2024-03-15 |
| TWI827492B (en) | 2023-12-21 |
| TWI768072B (en) | 2022-06-21 |
| TWI801309B (en) | 2023-05-01 |
| TW202234729A (en) | 2022-09-01 |
| WO2019244362A1 (en) | 2019-12-26 |
| CN112272966B (en) | 2024-02-02 |
| TWI784911B (en) | 2022-11-21 |
| CN112272966A (en) | 2021-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7328408B2 (en) | LIFT DEVICE AND RECEPTOR SUBSTRATE MANUFACTURING METHOD | |
| TWI827492B (en) | Transfer method and photomask | |
| JP2021056533A (en) | Exposure apparatus, exposure method and method for manufacturing flat panel display | |
| JP6727556B2 (en) | Exposure apparatus and exposure method, and flat panel display manufacturing method | |
| JP7491778B2 (en) | Scanning type reduction projection optical system and laser processing device using the same | |
| JP7382453B2 (en) | How to remove defective parts | |
| JP2015130407A (en) | Lithographic apparatus, lithographic method, and method of manufacturing article | |
| JP3704096B2 (en) | Laser processing method and apparatus | |
| US20090310108A1 (en) | Exposure apparatus and method of manufacturing device | |
| JP7255000B2 (en) | Defect removal method, lift method, photomask and lift system | |
| CN111992893B (en) | Laser processing device | |
| JP7490848B2 (en) | Laser processing method, photomask and laser processing system | |
| JP2004138554A (en) | Measuring device and exposure device | |
| WO2004051184A1 (en) | Shape measurement method, shape measurement device, tilt measurement method, stage device, exposure device, exposure method, and device manufacturing method | |
| JPH0410208B2 (en) | ||
| JPH0444209A (en) | Exposing method |