TWI803008B - Method for forming pattern on the substrate structure without using mask - Google Patents
Method for forming pattern on the substrate structure without using mask Download PDFInfo
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Abstract
Description
本發明涉及了一種基材結構，具體來說是涉及了一種不使用遮蔽層之基材結構之圖案化方法、以及一種基材結構。 The present invention relates to a substrate structure, in particular to a method for patterning a substrate structure without a masking layer, and a substrate structure.
目前針對金屬加工形成線路圖形，通常是以蝕刻加工方式來完成。但是對厚金屬進行蝕刻加工形成線路圖形會耗費大量的化學藥液，而對厚金屬進行機械加工形成線路圖形則極易對基底造成破壞。 At present, the formation of circuit patterns for metal processing is usually done by etching. However, etching a thick metal to form a circuit pattern will consume a large amount of chemical liquid, and machining a thick metal to form a circuit pattern will easily cause damage to the substrate.
有鑑於此，本發明人本於多年從事相關產品之開發與設計，有感上述缺失之可改善，乃特潛心研究並配合學理之運用，終於提出一種設計合理且有效改善上述缺失之本發明。 In view of this, the inventor has been engaged in the development and design of related products for many years, and felt that the above-mentioned defects can be improved, so he devoted himself to research and combined with the application of theories, and finally proposed an invention with a reasonable design and effective improvement of the above-mentioned defects.
本發明所要解決的技術問題在於，針對現有技術的不足提供一種不使用遮蔽層之基材結構之圖案化方法、以及一種基材結構。 The technical problem to be solved by the present invention is to provide a method for patterning a substrate structure without a masking layer and a substrate structure to address the shortcomings of the prior art.
為了解決上述的技術問題，本發明提供一種不使用遮蔽層之基材結構之圖案化方法，包括：(a)提供一導電絕緣之基材結構，所述導電絕緣之基材結構具有一絕緣導熱層及一形成在所述絕緣導熱層之上的導電層；(b)以機械加工方式移除局部的所述導電層以形成至少有一導電凹槽，且使所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比，並使所述導電凹槽之槽開口與槽底壁分別具有一第一預留寬度及一第二預留寬度，從而使所述導電絕緣之基材結構形成為一預處理之基材結構； (c)以蝕刻加工方式移除所述導電凹槽之槽底壁下方至所述導電層之底面界定的一預留導電層而使所述導電凹槽形成為導電溝槽，且所述導電溝槽之側壁與所述導電層之表面間形成有一特徵夾角，從而得到最終的具有圖案化之厚導電層之基材結構。 In order to solve the above-mentioned technical problems, the present invention provides a method for patterning a substrate structure without using a shielding layer, including: (a) providing a conductive and insulating substrate structure, the conductive and insulating substrate structure having an insulating and thermally conductive layer and a conductive layer formed on the insulating heat-conducting layer; (b) remove part of the conductive layer by machining to form at least one conductive groove, and make the thickness of the conductive groove and the The thickness of the conductive layer is formed with a predetermined thickness ratio, and the slot opening and the bottom wall of the conductive groove have a first reserved width and a second reserved width respectively, so that the conductive and insulating substrate The structure is formed as a pretreated substrate structure; (c) removing a reserved conductive layer defined from below the groove bottom wall of the conductive groove to the bottom surface of the conductive layer by etching to form the conductive groove into a conductive groove, and the conductive groove A characteristic included angle is formed between the sidewall of the trench and the surface of the conductive layer, so as to obtain the final substrate structure with a patterned thick conductive layer.
在一優選實施例中，所述絕緣導熱層是以高分子材料與導熱粉粒混合之複合材料所製成。 In a preferred embodiment, the insulating and heat-conducting layer is made of a composite material mixed with polymer materials and heat-conducting powder particles.
在一優選實施例中，所述導電層之厚度是介於0.5至6mm時，使所述導電凹槽之厚度與所述導電層之厚度形成的所述預定厚度比是介於0.8：1至1：1之間。 In a preferred embodiment, when the thickness of the conductive layer is between 0.5 and 6 mm, the predetermined thickness ratio between the thickness of the conductive groove and the thickness of the conductive layer is between 0.8:1 and 1:1 between.
在一優選實施例中，所述第二預留寬度與所述第一預留寬度形成有一預定寬度比，所述預定寬度比是介於0.8：1至1：1之間。 In a preferred embodiment, the second reserved width forms a predetermined width ratio with the first reserved width, and the predetermined width ratio is between 0.8:1 and 1:1.
在一優選實施例中，所述導電溝槽之溝槽口形成有一第一寬度，所述導電溝槽之兩側壁間形成有一第二寬度，並且所述第一寬度與所述第一預留寬度的差值加上所述第二寬度與所述第二預留寬度的差值的總和為所述預留導電層之厚度的0.5至2.5倍。 In a preferred embodiment, the groove opening of the conductive trench is formed with a first width, and a second width is formed between the two side walls of the conductive trench, and the first width and the first reserved The sum of the width difference plus the difference between the second width and the second reserved width is 0.5 to 2.5 times the thickness of the reserved conductive layer.
在一優選實施例中，所述特徵夾角為一大於等於90°的特徵夾角。 In a preferred embodiment, the characteristic included angle is a characteristic included angle greater than or equal to 90°.
為了解決上述的技術問題，本發明另提供一種基材結構，包括有一絕緣導熱層及一形成在所述絕緣導熱層之上的導電層；其中，所述導電層形成至少有一導電凹槽，且所述導電凹槽是通過機械加工方式移除局部的所述導電層所形成，並且所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比，且所述導電凹槽之槽開口與所述導電凹槽之槽底壁分別具有一第一預留寬度及一第二預留寬度，並且所述第二預留寬度與所述第一預留寬度形成有一預定寬度比。 In order to solve the above-mentioned technical problems, the present invention further provides a substrate structure, which includes an insulating and heat-conducting layer and a conductive layer formed on the insulating and heat-conducting layer; wherein, the conductive layer forms at least one conductive groove, and The conductive groove is formed by removing part of the conductive layer by mechanical processing, and the thickness of the conductive groove and the thickness of the conductive layer form a predetermined thickness ratio, and the groove of the conductive groove The opening and the groove bottom wall of the conductive groove respectively have a first reserved width and a second reserved width, and the second reserved width forms a predetermined width ratio with the first reserved width.
在一優選實施例中，所述導電層之厚度是介於0.5至6mn，並且所述導電凹槽之厚度與所述導電層之厚度形成的所述預定厚度比是介於0.8：1至1：1之間。 In a preferred embodiment, the thickness of the conductive layer is between 0.5 and 6 mm, and the predetermined thickness ratio between the thickness of the conductive groove and the thickness of the conductive layer is between 0.8:1 and 1 : Between 1.
在一優選實施例中，所述導電凹槽是通過銑削加工方式移除局部的所述導電層所形成的一金屬導電凹槽。 In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing part of the conductive layer by milling.
在一優選實施例中，所述導電凹槽是通過車削加工方式移除局部的所述導電層所形成的一金屬導電凹槽。 In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing part of the conductive layer by turning.
在一優選實施例中，所述導電凹槽是通過電火光加工方式移除局部的所述導電層所形成的一金屬導電凹槽。 In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing part of the conductive layer by electro-firing machining.
為使能更進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本發明加以限制。 In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings related to the present invention. However, the provided drawings are only for reference and description, and are not intended to limit the present invention.
700:導電絕緣之基材結構 700: conductive and insulating substrate structure
800:預處理之基材結構 800: Substrate structure of pretreatment
900:具有圖案化之厚導電層之基材結構 900: Substrate structure with patterned thick conductive layer
10:絕緣導熱層 10: Insulation and heat conduction layer
20:導電層 20: Conductive layer
201:底面 201: Bottom
202:表面 202: surface
21:導電凹槽 21: Conductive groove
211:槽開口 211: slot opening
212:槽底壁 212: tank bottom wall
22:導電溝槽 22: Conductive trench
221:溝槽口 221: Groove mouth
222:側壁 222: side wall
T,T1,T2:厚度 T, T1, T2: Thickness
W1,W2,W1a,W2a:寬度 W1, W2, W1a, W2a: Width
θ:特徵夾角 θ: Feature angle
圖1為本發明一實施例的基材結構的側視示意圖。 FIG. 1 is a schematic side view of a substrate structure according to an embodiment of the present invention.
圖2為本發明一實施例的基材結構的側視示意圖。 FIG. 2 is a schematic side view of a substrate structure according to an embodiment of the present invention.
圖3為本發明一實施例的基材結構的側視示意圖。 FIG. 3 is a schematic side view of a substrate structure according to an embodiment of the present invention.
以下是通過特定的具體實施例來說明本發明所公開有關的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不背離本發明的構思下進行各種修改與變更。另外，本發明的附圖僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的保護範圍。另外，本文中所 使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 The following are specific examples to illustrate the implementation methods disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple illustration, and are not drawn according to the actual size, which is stated in advance. The following embodiments will further describe the relevant technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the The term "or" used may include any one or a combination of multiple items in the associated listed items depending on the actual situation.
請一併參閱圖1至圖3所示，本發明實施例提供一種不使用遮蔽層之基材結構之圖案化方法，主要包括有以下步驟。 Please refer to FIG. 1 to FIG. 3 together. Embodiments of the present invention provide a method for patterning a substrate structure without using a masking layer, which mainly includes the following steps.
如圖1所示，首先，(a)提供一導電絕緣之基材結構700，所述導電絕緣之基材結構700具有一絕緣導熱層10及一形成在所述絕緣導熱層10之上的導電層20。
As shown in FIG. 1 , firstly, (a) a conductive and
進一步說，所述絕緣導熱層10是以高分子材料與導熱粉粒(e.g.陶瓷粉粒)混合之複合材料所製成，以達到絕緣及導熱效果。並且，所述導電層20是以金屬製成具預定厚度的厚導電層。在一優選實施例中，所述導電層20之厚度T是介於0.5至6mm之間。
Furthermore, the insulating and heat-conducting
接著，如圖2所示，(b)以機械加工方式移除局部的所述導電層20以形成至少有一導電凹槽21，且使所述導電凹槽21之厚度T1與所述導電層20之厚度T形成有一預定厚度比(T1：T)，也就是機械加工去除的金屬厚度(深度)與導電層20之厚度T具相關性，並使所述導電凹槽21之槽開口211與槽底壁212分別具有一第一預留寬度W1及一第二預留寬度W2，以將所述導電層20加工而形成圖案化之前身，從而使圖1所示的導電絕緣之基材結構700形成為圖2所示的預處理之基材結構800，即預成品。
Then, as shown in FIG. 2 , (b) remove part of the
在一優選實施例中，是以銑削加工方式移除局部的所述導電層20以形成至少有一所述導電凹槽21。
In a preferred embodiment, part of the
在一優選實施例中，是以車削加工方式移除局部的所述導電層20以形成至少有一所述導電凹槽21。
In a preferred embodiment, at least one
在一優選實施例中，是以電火光加工方式移除局部的所述導電層20以形成至少有一所述導電凹槽21。
In a preferred embodiment, at least one
另外，所述導電凹槽21之槽底壁212形成的第二預留寬度W2與所述導電凹槽21之槽開口211形成的第一預留寬度W1更形成有一預定寬度比(W2：W1)，且所述預定寬度比是介於0.8：1至1：1之間。
In addition, the second reserved width W2 formed by the
最後，如圖3所示，(c)以蝕刻加工方式(例如非等向蝕刻)移除圖2示出的導電凹槽21之槽底壁212下方至導電層20之底面201界定的一預留導電層(也就是所述導電凹槽21之槽底壁212正下方所殘留之導電層)而使所述導電凹槽21形成為導電溝槽22，且使所述導電溝槽22之側壁222與所述導電層20之表面202間形成有一特徵夾角θ，從而得到最終的具有圖案化之厚導電層之基材結構900。
Finally, as shown in FIG. 3 , (c) remove the
進一步說，為了達到蝕刻後使得所述導電溝槽22之溝槽口221形成有預定的第一寬度W1a且所述導電溝槽22之兩側壁222(於厚度T2位置)間形成有預定的第二寬度W2a，需使蝕刻後的第一寬度W1a與蝕刻前的第一預留寬度W1的差值，加上蝕刻後的第二寬度W2a與蝕刻前的第二預留寬度W2的差值的總和，為預留導電層之厚度T2的0.5至2.5倍。並且，可以達到蝕刻後使得所述導電溝槽22之側壁222與所述導電層20之表面202間形成有一大於等於(≧)90°的特徵夾角θ。
Furthermore, in order to achieve the predetermined first width W1a formed in the groove opening 221 of the
並且，所述導電層20之厚度T是介於0.5至6mm時，使所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比(T1：T)是介於0.8：1至1：1之間。
Moreover, when the thickness T of the
並且，根據以上所述，本發明實施例亦提供一種基材結構，例如可以是圖2示出的預處理之基材結構800，其具有一絕緣導熱層10及一形成在所述絕緣導熱層10之上的導電層20。其中，所述導電層20形成至少有一導電凹槽21，且所述導電凹槽21是通過機械加工方式移除局部的所述導電層20所形成，並且所述導電凹槽21之厚度T1與所述導電層20之厚度T
形成有一預定厚度比(T1：T)，且所述導電凹槽21之槽開口211與所述導電凹槽21之槽底壁212分別具有一第一預留寬度W1及一第二預留寬度W2，並且所述第二預留寬度W2與所述第一預留寬度W1形成有一預定寬度比(W2：W1)。
Moreover, according to the above, the embodiment of the present invention also provides a substrate structure, such as the pretreated
在一優選實施例中，所述導電凹槽21是通過銑削加工方式移除局部的所述導電層20所形成的一金屬導電凹槽。
In a preferred embodiment, the
在一優選實施例中，所述導電凹槽21是通過車削加工方式移除局部的所述導電層20所形成的一金屬導電凹槽。
In a preferred embodiment, the
在一優選實施例中，所述導電凹槽21是通過電火光加工方式移除局部的所述導電層20所形成的一金屬導電凹槽。
In a preferred embodiment, the
在一優選實施例中，所述導電層20之厚度T是介於0.5至6mm，且所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比(T1：T)是介於0.8：1至1：1之間。
In a preferred embodiment, the thickness T of the
在一優選實施例中，所述第二預留寬度W2與所述第一預留寬度W1形成的預定寬度比(W2：W1)是介於0.8：1至1：1之間。 In a preferred embodiment, the predetermined width ratio ( W2 : W1 ) formed by the second reserved width W2 and the first reserved width W1 is between 0.8:1 and 1:1.
再者，本發明實施例亦提供一種基材結構，例如可以是圖3示出的具有圖案化之厚導電層之基材結構900，其具有一絕緣導熱層10及一形成在所述絕緣導熱層10之上的導電層20。其中，所述導電層20形成至少有一裸露出所述絕緣導熱層10的導電溝槽22，且所述導電溝槽22是通過機械加工與無遮蔽層的蝕刻加工方式所形成，從而使得所述導電溝槽22之側壁222與所述導電層20之表面202間形成有一大於等於(≧)90°的特徵夾角θ。
Moreover, the embodiment of the present invention also provides a substrate structure, such as the
綜合以上所述，本發明提供的一種不使用遮蔽層之基材結構之圖案化方法，其可以通過「提供一導電絕緣之基材結構，所述導電絕緣 之基材結構具有一絕緣導熱層及一形成在所述絕緣導熱層之上的導電層」、「以機械加工方式移除局部的所述導電層以形成至少有一導電凹槽，且使所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比，並使所述導電凹槽之槽開口與槽底壁分別具有一第一預留寬度及一第二預留寬度，從而使所述導電絕緣之基材結構形成為一預處理之基材結構」、「以蝕刻加工方式移除所述導電凹槽之槽底壁下方至所述導電層之底面界定的一預留導電層而使所述導電凹槽形成為導電溝槽，且所述導電溝槽之側壁與所述導電層之表面間形成有一特徵夾角，從而得到最終的具有圖案化之厚導電層之基材結構」的技術方案，使得具預定厚度的導電層能夠通過機械加工預形成有導電凹槽，且使機械加工所形成的導電凹槽之厚度與導電層之厚度形成有預定厚度比，以利於後續進行蝕刻加工，且可節約蝕刻化學藥液的用量，加快生產速度並節省生產成本，除此之外，通過預形成有導電凹槽，可有效避免直接破壞、震動破壞或擊穿導電層之下的絕緣導熱層，導致接合性、絕緣性及導熱性大幅下降的問題。 Based on the above, the present invention provides a method for patterning a substrate structure without using a shielding layer, which can be achieved by "providing a conductive and insulating substrate structure, and the conductive and insulating The substrate structure has an insulating heat-conducting layer and a conductive layer formed on the insulating heat-conducting layer”, “remove part of the conductive layer by mechanical processing to form at least one conductive groove, and make the The thickness of the conductive groove and the thickness of the conductive layer form a predetermined thickness ratio, and the groove opening and the groove bottom wall of the conductive groove have a first reserved width and a second reserved width respectively, so that The conductive and insulating substrate structure is formed as a pre-treated substrate structure", "removing a reserved conductive layer defined by the bottom wall of the conductive groove from below the bottom wall of the conductive groove to the bottom surface of the conductive layer by etching The conductive groove is formed into a conductive groove, and a characteristic included angle is formed between the sidewall of the conductive groove and the surface of the conductive layer, so as to obtain the final substrate structure with a patterned thick conductive layer. The technical solution enables the conductive layer with a predetermined thickness to be pre-formed with conductive grooves by machining, and the thickness of the conductive groove formed by machining and the thickness of the conductive layer have a predetermined thickness ratio, so as to facilitate subsequent etching processing, and can save the amount of etching chemical liquid, speed up production and save production costs. In addition, through the pre-formed conductive groove, it can effectively avoid direct damage, vibration damage or breakdown of the insulation under the conductive layer. The heat conduction layer leads to the problem of a significant drop in bonding, insulation, and thermal conductivity.
以上所公開的內容僅為本發明的優選可行實施例，並非因此侷限本發明的申請專利範圍，所以凡是運用本發明說明書及圖式內容所做的等效技術變化，均包含於本發明的申請專利範圍內。 The content disclosed above is only a preferred feasible embodiment of the present invention, and does not therefore limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.
800:預處理之基材結構 800: Substrate structure of pretreatment
10:絕緣導熱層 10: Insulation and heat conduction layer
20:導電層 20: Conductive layer
201:底面 201: Bottom
21:導電凹槽 21: Conductive groove
211:槽開口 211: slot opening
212:槽底壁 212: tank bottom wall
T,T1,T2:厚度 T, T1, T2: Thickness
W1,W2:寬度 W1, W2: width
Claims (5)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1671270A (en) * | 2004-03-17 | 2005-09-21 | 三星电子株式会社 | Method of manufacturing tape wiring substrate |
| TW201345346A (en) * | 2012-04-20 | 2013-11-01 | Leading Tech Comm Inc | Manufacturing method of circuit pattern |
| CN104902690A (en) * | 2015-05-26 | 2015-09-09 | 广州杰赛科技股份有限公司 | Circuit board manufacturing method |
| TW202106135A (en) * | 2019-07-30 | 2021-02-01 | 聚鼎科技股份有限公司 | Manufacturing method of circuit substrate |
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2021
- 2021-10-05 TW TW110136979A patent/TWI803008B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1671270A (en) * | 2004-03-17 | 2005-09-21 | 三星电子株式会社 | Method of manufacturing tape wiring substrate |
| TW201345346A (en) * | 2012-04-20 | 2013-11-01 | Leading Tech Comm Inc | Manufacturing method of circuit pattern |
| CN104902690A (en) * | 2015-05-26 | 2015-09-09 | 广州杰赛科技股份有限公司 | Circuit board manufacturing method |
| TW202106135A (en) * | 2019-07-30 | 2021-02-01 | 聚鼎科技股份有限公司 | Manufacturing method of circuit substrate |
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