TWM624700U - Substrate structure having thick conductive layer - Google Patents
Substrate structure having thick conductive layer Download PDFInfo
- Publication number
- TWM624700U TWM624700U TW110211690U TW110211690U TWM624700U TW M624700 U TWM624700 U TW M624700U TW 110211690 U TW110211690 U TW 110211690U TW 110211690 U TW110211690 U TW 110211690U TW M624700 U TWM624700 U TW M624700U
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive layer
- conductive
- layer
- thickness
- groove
- Prior art date
Links
Images
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Structure Of Printed Boards (AREA)
Abstract
本新型提供一種具有厚導電層之基材結構包括一絕緣導熱層、一形成在所述絕緣導熱層之上的導電層、以及一覆蓋在所述導電層之上的非光敏性高分子遮蔽層。其中，所述導電層形成至少有一裸露所述導電層的導電凹槽，且所述導電凹槽是通過機械加工方式移除局部的所述非光敏性高分子遮蔽層及其下局部的所述導電層所形成，並且所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比，藉此可利於後續進行蝕刻加工。The present invention provides a substrate structure with a thick conductive layer, which includes an insulating and thermally conductive layer, a conductive layer formed on the insulating and thermally conductive layer, and a non-photosensitive polymer shielding layer covering the conductive layer. . Wherein, the conductive layer forms at least one conductive groove that exposes the conductive layer, and the conductive groove is a part of the non-photosensitive polymer shielding layer and the part of the lower part of the non-photosensitive polymer shielding layer removed by machining A conductive layer is formed, and a predetermined thickness ratio is formed between the thickness of the conductive groove and the thickness of the conductive layer, thereby facilitating subsequent etching processing.
Description
本新型涉及了一種基材結構，具體來說是涉及了一種具有厚導電層之基材結構。 The new model relates to a base material structure, in particular to a base material structure with a thick conductive layer.
目前針對金屬加工形成線路圖形，通常是以蝕刻加工方式來完成。但是對厚金屬進行蝕刻加工形成線路圖形會耗費大量的化學藥液，而對厚金屬進行機械加工形成線路圖形則極易對基底造成破壞。 At present, the formation of circuit patterns for metal processing is usually completed by etching processing. However, etching a thick metal to form a circuit pattern consumes a lot of chemical solution, and machining a thick metal to form a circuit pattern can easily cause damage to the substrate.
有鑑於此，本新型創作人本於多年從事相關產品之開發與設計，有感上述缺失之可改善，乃特潛心研究並配合學理之運用，終於提出一種設計合理且有效改善上述缺失之本新型。 In view of this, the creator of this new model has been engaged in the development and design of related products for many years, and feels that the above-mentioned shortcomings can be improved, so he has devoted himself to research and cooperated with the application of academic principles, and finally proposed a reasonable design and effective improvement of the above-mentioned shortcomings of this new model. .
本新型所要解決的技術問題在於，針對現有技術的不足提供一種具有厚導電層之基材結構。 The technical problem to be solved by the present invention is to provide a substrate structure with a thick conductive layer in view of the deficiencies of the prior art.
本新型實施例提供一種具有厚導電層之基材結構，包括：一絕緣導熱層、一形成在所述絕緣導熱層之上的導電層、以及一覆蓋在所述導電層之上的非光敏性高分子遮蔽層；其中，所述導電層形成至少有一裸露所述導電層的導電凹槽，且所述導電凹槽是通過機械加工方式移除局部的所述非光敏性高分子遮蔽層及其下局部的所述導電層所形成，並且所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比。 The novel embodiment provides a substrate structure with a thick conductive layer, including: an insulating and thermally conductive layer, a conductive layer formed on the insulating and thermally conductive layer, and a non-photosensitive layer covering the conductive layer A polymer shielding layer; wherein, the conductive layer forms at least one conductive groove that exposes the conductive layer, and the conductive groove is a part of the non-photosensitive polymer shielding layer and its parts removed by mechanical processing. The lower part of the conductive layer is formed, and the thickness of the conductive groove and the thickness of the conductive layer are formed with a predetermined thickness ratio.
在一優選實施例中，所述導電凹槽是通過銑削加工方式移除 局部的所述非光敏性高分子遮蔽層及其下局部的所述導電層所形成的一金屬導電凹槽。 In a preferred embodiment, the conductive grooves are removed by milling A metal conductive groove formed by the partial non-photosensitive polymer shielding layer and the partial conductive layer below.
在一優選實施例中，所述導電凹槽是通過車削加工方式移除局部的所述非光敏性高分子遮蔽層及其下局部的所述導電層所形成的一金屬導電凹槽。 In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the non-photosensitive polymer shielding layer and a part of the conductive layer below it by turning.
在一優選實施例中，所述導電凹槽是通過電火光加工方式移除局部的所述非光敏性高分子遮蔽層及其下局部的所述導電層所形成的一金屬導電凹槽。 In a preferred embodiment, the conductive groove is a metal conductive groove formed by removing a part of the non-photosensitive polymer shielding layer and a part of the conductive layer below it by electro-firing machining.
在一優選實施例中，所述絕緣導熱層之下更形成有一金屬導熱層。 In a preferred embodiment, a metal heat-conducting layer is further formed under the insulating heat-conducting layer.
在一優選實施例中，所述金屬導熱層內部形成有立體散熱結構，並且所述立體散熱結構具有水冷通道。 In a preferred embodiment, a three-dimensional heat dissipation structure is formed inside the metal heat-conducting layer, and the three-dimensional heat dissipation structure has a water cooling channel.
為使能更進一步瞭解本新型的特徵及技術內容，請參閱以下有關本新型的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本新型加以限制。 For a further understanding of the features and technical contents of the present invention, please refer to the following detailed descriptions and drawings of the present invention. However, the drawings provided are only for reference and description, and are not intended to limit the present invention.
700:導電絕緣之基材結構 700: Substrate structure of conductive insulation
800:預處理之基材結構 800: Pretreated substrate structure
900:具有圖案化厚導電層之基材結構 900: Substrate structure with patterned thick conductive layer
10:絕緣導熱層 10: Insulation and heat conduction layer
20:導電層 20: Conductive layer
201:底面 201: Underside
21:導電凹槽 21: Conductive groove
211:槽開口 211: Slot opening
212:槽底壁 212: Bottom wall of groove
30:非光敏性高分子遮蔽層 30: Non-photosensitive polymer shielding layer
40:金屬導熱層 40: Metal thermal conductive layer
401:立體散熱結構 401: Three-dimensional heat dissipation structure
4011:水冷通道 4011: Water cooling channel
T,T1,T2:厚度 T, T1, T2: Thickness
W,W1:寬度 W,W1: width
圖1為本新型一實施例的基材結構的側視示意圖。 FIG. 1 is a schematic side view of a substrate structure according to an embodiment of the novel.
圖2為本新型一實施例的基材結構的側視示意圖。 FIG. 2 is a schematic side view of a substrate structure according to an embodiment of the novel.
圖3為本新型一實施例的基材結構的側視示意圖。 3 is a schematic side view of a substrate structure according to an embodiment of the novel.
圖4為本新型一實施例的基材結構的側視示意圖。 FIG. 4 is a schematic side view of a substrate structure according to an embodiment of the novel.
以下是通過特定的具體實施例來說明本新型所公開有關的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本新型的優點與效果。本新型可通過其他不同的具體實施例加以施行或應用，本說明書 中的各項細節也可基於不同觀點與應用，在不背離本新型的構思下進行各種修改與變更。另外，本新型的附圖僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。以下的實施方式將進一步詳細說明本新型的相關技術內容，但所公開的內容並非用以限制本新型的保護範圍。另外，本文中所使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。 The following are specific specific examples to illustrate the related embodiments disclosed by the present invention, and those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments. Various details in the above can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are only for simple schematic illustration, and are not drawn according to the actual size, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or", as used herein, should include any one or a combination of more of the associated listed items, as the case may be.
請參閱圖1至圖3所示，本新型實施例提供一種具有厚導電層之基材結構之蝕刻成形方法，主要包括有以下步驟。 Please refer to FIG. 1 to FIG. 3 , the novel embodiment provides a method for etching and forming a substrate structure with a thick conductive layer, which mainly includes the following steps.
如圖1所示，首先，(a)提供一導電絕緣之基材結構700，所述導電絕緣之基材結構700具有一絕緣導熱層10、一形成在所述絕緣導熱層10之上的導電層20、以及一覆蓋在所述導電層20之上的非光敏性高分子遮蔽層30。
As shown in FIG. 1 , firstly, (a) a conductive and insulating
進一步說，所述絕緣導熱層10是以高分子材料與導熱粉粒(e.g.陶瓷粉粒)混合之複合材料所製成，以達到絕緣及導熱效果。並且，所述導電層20是以金屬製成具預定厚度的厚導電層。在一優選實施例中，所述導電層20之厚度T是介於0.5至6mm之間。
Furthermore, the insulating and heat-conducting
值得一提的是，本實施例用於遮蔽所述導電層20的遮蔽層是以非光敏性高分子材料所製成，也就是說，是以不可光成像的高分子材料所製成。在一優選實施例中，所述非光敏性高分子遮蔽層30可以是以環氧樹脂、丙烯酸樹脂、聚氨酯(PU)樹脂、聚醯亞胺(PI)樹脂的至少其一所製成。
It is worth mentioning that the shielding layer used for shielding the
接著，如圖2所示，(b)以機械加工方式移除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20以形成至少有一裸露所述導電層20的導電凹槽21，且使所述導電凹槽21之厚度T1與所述導電層
20之厚度T形成有一預定厚度比(T1：T)，也就是使機械加工去除的金屬厚度(深度)與導電層20之厚度T具相關性，從而使圖1所示的導電絕緣之基材結構700形成為圖2所示的預處理之基材結構800，即預成品。
Next, as shown in FIG. 2 , (b) removing part of the non-photosensitive
在一優選實施例中，是以銑削加工方式移除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20以形成至少有一裸露所述導電層20的導電凹槽21。
In a preferred embodiment, a part of the non-photosensitive
在一優選實施例中，是以車削加工方式移除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20以形成至少有一裸露所述導電層20的導電凹槽21。
In a preferred embodiment, a part of the non-photosensitive
在一優選實施例中，是以電火光加工方式移除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20以形成至少有一裸露所述導電層20的導電凹槽21。
In a preferred embodiment, a part of the non-photosensitive
另外，所述導電凹槽21之槽開口211的寬度W與所述導電凹槽21之槽底壁212的寬度W1更形成有一預定寬度比(W：W1)，且所述預定寬度比是介於0.8：1至1：1之間。
In addition, the width W of the groove opening 211 of the
最後，如圖3所示，(c)以蝕刻加工方式移除圖2示出的導電凹槽21之槽底壁212至導電層20之底面201界定的預留之導電層，也就是所述導電凹槽21之槽底壁212正下方預留之導電層，然後移除圖2示出的剩餘之非光敏性高分子遮蔽層30，從而得到最終的具有圖案化厚導電層之基材結構900。
Finally, as shown in FIG. 3 , (c) the reserved conductive layer defined by the
進一步說，為了更便於以蝕刻加工方式移除所述導電凹槽21之槽底壁212至導電層20之底面201形成的預留之導電層，需使前述預留之導電層之厚度T2與所述導電層20之厚度T形成有另一預定厚度比(T2：T)，所述另一預定厚度比是介於0.01：1至0.1：1之間。
Further, in order to remove the reserved conductive layer formed from the
除此之外，所述導電層20之厚度T是介於0.5mm至1mm時，使所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比(T1：T)是介於0.6：1至0.99：1之間。
In addition, when the thickness T of the
並且，所述導電層20之厚度T是介於1mm至3mm時，使所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比(T1：T)是介於0.8：1至0.99：1之間。
In addition, when the thickness T of the
最後，所述導電層20之厚度T是介於3mm至6mm時，使所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比(T1：T)是介於0.9：1至0.99：1之間。
Finally, when the thickness T of the
另外，在一優選實施例中，請參閱圖4所示，所述絕緣導熱層10之下更可以形成有一金屬導熱層40。並且，所述金屬導熱層40內部可以形成有立體散熱結構401，其可以是由片狀的鰭片結構所形成，也可以是由針柱式的鰭片結構(pin-fin type structure)所形成，且不以上述為限。並且，所述金屬導熱層40的立體散熱結構401還更可以形成有水冷通道4011，以形成工作液體流通通路。
In addition, in a preferred embodiment, as shown in FIG. 4 , a metal heat-conducting
並且，根據以上所述，本新型實施例亦提供一種具有厚導電層之基材結構，例如可以是圖2示出的預處理之基材結構800，其具有一絕緣導熱層10、一形成在所述絕緣導熱層10之上的導電層20、以及一覆蓋在所述導電層20之上的非光敏性高分子遮蔽層30。其中，所述導電層20形成至少有一裸露所述導電層20的導電凹槽21，且所述導電凹槽21是通過機械加工方式移除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20所形成，並且所述導電凹槽21之厚度T1與所述導電層20之厚度T形成有一預定厚度比。
Moreover, according to the above, the novel embodiment also provides a substrate structure with a thick conductive layer, such as the pretreated
在一優選實施例中，所述導電凹槽21是通過銑削加工方式移
除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20所形成的一金屬導電凹槽。
In a preferred embodiment, the
在一優選實施例中，所述導電凹槽21是通過車削加工方式移除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20所形成的一金屬導電凹槽。
In a preferred embodiment, the
在一優選實施例中，所述導電凹槽21是通過電火光加工方式移除局部的所述非光敏性高分子遮蔽層30及其下局部的所述導電層20所形成的一金屬導電凹槽。
In a preferred embodiment, the
在一優選實施例中，所述導電凹槽21之槽開口211的寬度W與所述導電凹槽21之槽底壁212的寬度形成有一預定寬度比，且所述預定寬度比是介於0.8：1至1：1之間。
In a preferred embodiment, the width W of the
在一優選實施例中，所述預留之導電層之厚度T2與所述導電層20之厚度T形成有另一預定厚度比，所述另一預定厚度比是介於0.01：1至0.1：1之間。
In a preferred embodiment, the thickness T2 of the reserved conductive layer and the thickness T of the
在一優選實施例中，所述導電層20之厚度T是介於0.5至6mm之間。並且，所述導電層20之厚度T是介於0.5mm至1mm時，所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比是介於0.6：1至0.99：1之間。所述導電層20之厚度T是介於1mm至3mm時，所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比是介於0.8：1至0.99：1之間。所述導電層20之厚度T是介於3mm至6mm時，所述導電凹槽21之厚度T1與所述導電層20之厚度T形成的預定厚度比是介於0.9：1至0.99：1之間。
In a preferred embodiment, the thickness T of the
在一優選實施例中，所述絕緣導熱層10之下更可以形成有一金屬導熱層40。
In a preferred embodiment, a metal heat-conducting
綜合以上所述，本新型提供的具有厚導電層之基材結構，其可以通過「一絕緣導熱層、一形成在所述絕緣導熱層之上的導電層、以及一覆蓋在所述導電層之上的非光敏性高分子遮蔽層」、「所述導電層形成至少有一裸露所述導電層的導電凹槽，且所述導電凹槽是通過機械加工方式移除局部的所述非光敏性高分子遮蔽層及其下局部的所述導電層所形成，並且所述導電凹槽之厚度與所述導電層之厚度形成有一預定厚度比」的技術方案，使得具預定厚度的導電層能夠通過機械加工預形成有導電凹槽，且使機械加工所形成的導電凹槽之厚度與導電層之厚度形成有預定厚度比，以利於後續進行蝕刻加工，且可節約蝕刻化學藥液的用量，加快生產速度並節省生產成本，除此之外，通過預形成有導電凹槽，可有效避免直接破壞、震動破壞或擊穿導電層之下的絕緣導熱層，導致接合性、絕緣性及導熱性大幅下降的問題。 Based on the above, the substrate structure with a thick conductive layer provided by the present invention can be composed of "an insulating and thermally conductive layer, a conductive layer formed on the insulating and thermally conductive layer, and a layer covering the conductive layer. The non-photosensitive polymer shielding layer on the upper part", "the conductive layer is formed with at least one conductive groove that exposes the conductive layer, and the conductive groove is removed by mechanical processing. Part of the non-photosensitive high The technical solution is that the molecular shielding layer and the conductive layer below it are formed, and the thickness of the conductive groove and the thickness of the conductive layer are formed with a predetermined thickness ratio, so that the conductive layer with a predetermined thickness can pass through the mechanical Conductive grooves are pre-formed by machining, and a predetermined thickness ratio is formed between the thickness of the conductive grooves formed by machining and the thickness of the conductive layer, so as to facilitate subsequent etching processing, and can save the amount of etching chemicals and speed up production In addition, by pre-forming conductive grooves, it can effectively avoid direct damage, vibration damage or breakdown of the insulating and heat-conducting layer under the conductive layer, resulting in a significant decrease in bonding, insulation and thermal conductivity. The problem.
以上所公開的內容僅為本新型的優選可行實施例，並非因此侷限本新型的申請專利範圍，所以凡是運用本新型說明書及圖式內容所做的等效技術變化，均包含於本新型的申請專利範圍內。 The contents disclosed above are only the preferred and feasible embodiments of the present invention, and are not intended to limit the scope of the patent application of the present invention. Therefore, any equivalent technical changes made by using the contents of the description and drawings of the present invention are included in the application of the present invention. within the scope of the patent.
800:預處理之基材結構 800: Pretreated substrate structure
10:絕緣導熱層 10: Insulation and heat conduction layer
20:導電層 20: Conductive layer
201:底面 201: Underside
21:導電凹槽 21: Conductive groove
211:槽開口 211: Slot opening
212:槽底壁 212: Bottom wall of groove
30:非光敏性高分子遮蔽層 30: Non-photosensitive polymer shielding layer
T,T1,T2:厚度 T, T1, T2: Thickness
W,W1:寬度 W,W1: width
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110211690U TWM624700U (en) | 2021-10-05 | 2021-10-05 | Substrate structure having thick conductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110211690U TWM624700U (en) | 2021-10-05 | 2021-10-05 | Substrate structure having thick conductive layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM624700U true TWM624700U (en) | 2022-03-21 |
Family
ID=81748052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110211690U TWM624700U (en) | 2021-10-05 | 2021-10-05 | Substrate structure having thick conductive layer |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM624700U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI795012B (en) * | 2021-10-05 | 2023-03-01 | 艾姆勒科技股份有限公司 | Substrate structure having thick conductive layer and method for etching the same |
-
2021
- 2021-10-05 TW TW110211690U patent/TWM624700U/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI795012B (en) * | 2021-10-05 | 2023-03-01 | 艾姆勒科技股份有限公司 | Substrate structure having thick conductive layer and method for etching the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI622106B (en) | A substrate and the method to fabricate thereof | |
| TWI387084B (en) | Substrate having vias and package having the same | |
| KR920003488A (en) | Film carrier tape and stacked multi-chip semiconductor device embedded therein and method for manufacturing | |
| TWM624700U (en) | Substrate structure having thick conductive layer | |
| CN106024735B (en) | With the glass intermediary layer for being embedded into formula thermoelectric device | |
| US20160286660A1 (en) | Glass interposer with thermal vias | |
| TWI602481B (en) | Electronic component embedded printed circuit board and method of manufacturing the same | |
| TWM627557U (en) | Immersion-cooled porous heat-dissipation substrate structure | |
| TW201434129A (en) | Multi-chip package and method for manufacturing the same | |
| JP2003297918A5 (en) | ||
| CN110636690A (en) | Heat dissipation substrate structure and manufacturing method thereof | |
| TWI692846B (en) | Heat dissipation substrate and fabricating method thereof | |
| CN206059386U (en) | Circuit board and electronic installation | |
| TWI795012B (en) | Substrate structure having thick conductive layer and method for etching the same | |
| TWM623302U (en) | Substrate structure | |
| TWI803008B (en) | Method for forming pattern on the substrate structure without using mask | |
| CN106356357A (en) | Package substrate and method for fabricating the same | |
| TWM615543U (en) | Insulated metal substrate structure | |
| TWM629670U (en) | Two-phase immersion-cooled fin structure | |
| TWI837936B (en) | Heat-conductive circuit board | |
| US20230199969A1 (en) | Etching method for manufacturing substrate structure having thick electrically conductive layer, and substrate structure having thick electrically conductive layer | |
| TWM629671U (en) | Immersion-cooled heat-dissipation structure | |
| JPH01295455A (en) | Semiconductor laminated and integrated circuit element | |
| TWI790835B (en) | Immersion-type heat dissipation structure and method for manufacturing the same | |
| TWI797865B (en) | Two-phase immersion-cooled heat-dissipation structure |