TWI784291B - 發光裝置的蓋件、蓋件的製造方法及發光裝置 - Google Patents

發光裝置的蓋件、蓋件的製造方法及發光裝置 Download PDF

Info

Publication number: TWI784291B
Authority: TW; Taiwan
Prior art keywords: film; layer; cover; titanium; gold
Prior art date: 2019-07-25

Application number

TW109123132A

Other languages

English (en)

Chinese (zh)

Other versions

TW202115930A (zh

Inventor

村上達也

辻原利治

Original Assignee

日商大真空股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-07-25

Filing date

2020-07-09

Publication date

2022-11-21

2020-07-09 Application filed by 日商大真空股份有限公司 filed Critical 日商大真空股份有限公司

2021-04-16 Publication of TW202115930A publication Critical patent/TW202115930A/zh

2022-11-21 Application granted granted Critical

2022-11-21 Publication of TWI784291B publication Critical patent/TWI784291B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 34
239000010408 film Substances 0.000 claims abstract description 366
239000010936 titanium Substances 0.000 claims abstract description 92
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 90
229910052719 titanium Inorganic materials 0.000 claims abstract description 90
239000013078 crystal Substances 0.000 claims abstract description 88
239000011104 metalized film Substances 0.000 claims abstract description 49
238000007789 sealing Methods 0.000 claims abstract description 32
229910045601 alloy Inorganic materials 0.000 claims abstract description 30
239000000956 alloy Substances 0.000 claims abstract description 30
239000010931 gold Substances 0.000 claims description 83
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 82
229910052737 gold Inorganic materials 0.000 claims description 80
238000000034 method Methods 0.000 claims description 43
239000000463 material Substances 0.000 claims description 42
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 37
230000008569 process Effects 0.000 claims description 28
229910000679 solder Inorganic materials 0.000 claims description 28
230000005496 eutectics Effects 0.000 claims description 20
229910001128 Sn alloy Inorganic materials 0.000 claims description 18
JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 18
229910052759 nickel Inorganic materials 0.000 claims description 18
239000011135 tin Substances 0.000 claims description 17
229910052718 tin Inorganic materials 0.000 claims description 16
229910000990 Ni alloy Inorganic materials 0.000 claims description 15
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 15
230000002093 peripheral effect Effects 0.000 claims description 15
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 12
238000007747 plating Methods 0.000 claims description 7
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
230000001590 oxidative effect Effects 0.000 claims description 3
229910001069 Ti alloy Inorganic materials 0.000 claims description 2
229910001020 Au alloy Inorganic materials 0.000 claims 1
239000010410 layer Substances 0.000 abstract description 176
229910052751 metal Inorganic materials 0.000 abstract description 86
239000002184 metal Substances 0.000 abstract description 86
239000000919 ceramic Substances 0.000 abstract description 38
238000004806 packaging method and process Methods 0.000 abstract description 4
239000002356 single layer Substances 0.000 abstract description 3
238000011156 evaluation Methods 0.000 description 44
HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 24
229910001000 nickel titanium Inorganic materials 0.000 description 24
238000002845 discoloration Methods 0.000 description 22
238000001465 metallisation Methods 0.000 description 19
238000012360 testing method Methods 0.000 description 16
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
238000005336 cracking Methods 0.000 description 13
238000007499 fusion processing Methods 0.000 description 11
230000015572 biosynthetic process Effects 0.000 description 10
238000010438 heat treatment Methods 0.000 description 10
CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 8
239000000758 substrate Substances 0.000 description 7
238000005452 bending Methods 0.000 description 6
238000002844 melting Methods 0.000 description 6
230000008018 melting Effects 0.000 description 6
239000011651 chromium Substances 0.000 description 5
230000000694 effects Effects 0.000 description 5
230000035939 shock Effects 0.000 description 5
229910015363 Au—Sn Inorganic materials 0.000 description 3
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
210000002469 basement membrane Anatomy 0.000 description 3
229910052804 chromium Inorganic materials 0.000 description 3
238000002474 experimental method Methods 0.000 description 3
239000007789 gas Substances 0.000 description 3
239000001307 helium Substances 0.000 description 3
229910052734 helium Inorganic materials 0.000 description 3
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
238000005240 physical vapour deposition Methods 0.000 description 3
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 2
239000000853 adhesive Substances 0.000 description 2
230000001070 adhesive effect Effects 0.000 description 2
238000005275 alloying Methods 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
230000008901 benefit Effects 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
229910001882 dioxygen Inorganic materials 0.000 description 2
238000005304 joining Methods 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
238000004659 sterilization and disinfection Methods 0.000 description 2
238000003466 welding Methods 0.000 description 2
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000004927 fusion Effects 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000000155 melt Substances 0.000 description 1
210000004379 membrane Anatomy 0.000 description 1
239000012528 membrane Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
239000012466 permeate Substances 0.000 description 1
230000001737 promoting effect Effects 0.000 description 1
238000005476 soldering Methods 0.000 description 1
230000001954 sterilising effect Effects 0.000 description 1
230000001629 suppression Effects 0.000 description 1
229910001258 titanium gold Inorganic materials 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Device Packages (AREA)

TW109123132A 2019-07-25 2020-07-09 發光裝置的蓋件、蓋件的製造方法及發光裝置 TWI784291B (zh)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP2019-136741		2019-07-25
JP2019136741		2019-07-25
JP2019-214001		2019-11-27
JP2019214001		2019-11-27

Publications (2)

Publication Number	Publication Date
TW202115930A TW202115930A (zh)	2021-04-16
TWI784291B true TWI784291B (zh)	2022-11-21

Family

ID=74193041

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW109123132A TWI784291B (zh)	2019-07-25	2020-07-09	發光裝置的蓋件、蓋件的製造方法及發光裝置

Country Status (4)

Country	Link
JP (1)	JP7173347B2 (ja)
CN (1)	CN113646908A (ja)
TW (1)	TWI784291B (ja)
WO (1)	WO2021014904A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2011040577A (ja) *	2009-08-11	2011-02-24	Citizen Electronics Co Ltd	発光装置の製造方法
JP2015018873A (ja) *	2013-07-09	2015-01-29	日機装株式会社	半導体モジュール
JP2018093137A (ja) *	2016-12-07	2018-06-14	日機装株式会社	光半導体装置の製造方法
TW201906198A (zh) *	2017-06-22	2019-02-01	日商Ａｇｃ股份有限公司	窗材、光學封裝
TW201921728A (zh) *	2017-09-05	2019-06-01	韓商Ｌｇ伊諾特股份有限公司	半導體裝置封裝

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2002353352A (ja) *	2001-05-30	2002-12-06	Kyocera Corp	撮像素子収納用パッケージ
JP4332047B2 (ja) *	2004-02-26	2009-09-16	京セラ株式会社	電子装置
US7910945B2 (en) *	2006-06-30	2011-03-22	Cree, Inc.	Nickel tin bonding system with barrier layer for semiconductor wafers and devices
JP6294417B2 (ja) *	2016-09-01	2018-03-14	日機装株式会社	光半導体装置および光半導体装置の製造方法

2020
- 2020-06-30 WO PCT/JP2020/025716 patent/WO2021014904A1/ja active Application Filing
- 2020-06-30 JP JP2021533894A patent/JP7173347B2/ja active Active
- 2020-06-30 CN CN202080023443.6A patent/CN113646908A/zh active Pending
- 2020-07-09 TW TW109123132A patent/TWI784291B/zh active

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2011040577A (ja) *	2009-08-11	2011-02-24	Citizen Electronics Co Ltd	発光装置の製造方法
JP2015018873A (ja) *	2013-07-09	2015-01-29	日機装株式会社	半導体モジュール
JP2018093137A (ja) *	2016-12-07	2018-06-14	日機装株式会社	光半導体装置の製造方法
TW201906198A (zh) *	2017-06-22	2019-02-01	日商Ａｇｃ股份有限公司	窗材、光學封裝
TW201921728A (zh) *	2017-09-05	2019-06-01	韓商Ｌｇ伊諾特股份有限公司	半導體裝置封裝

Also Published As

Publication number	Publication date
WO2021014904A1 (ja)	2021-01-28
JP7173347B2 (ja)	2022-11-16
CN113646908A (zh)	2021-11-12
TW202115930A (zh)	2021-04-16
JPWO2021014904A1 (ja)	2021-01-28

Publication	Publication Date	Title
TWI649901B (zh)	2019-02-01	光半導體裝置及光半導體裝置的製造方法
TWI649902B (zh)	2019-02-01	光半導體裝置及光半導體裝置的製造方法
JP6339652B1 (ja)	2018-06-06	光半導体装置の製造方法
TWI659544B (zh)	2019-05-11	光半導體裝置及光半導體裝置的製造方法
TWI784291B (zh)	2022-11-21	發光裝置的蓋件、蓋件的製造方法及發光裝置
JP6602622B2 (ja)	2019-11-06	光デバイス装置および光デバイスを覆うための保護カバー
JP2020145390A (ja)	2020-09-10	発光装置及びその製造方法
JP5078933B2 (ja)	2012-11-21	パッケージ及びパッケージの製造方法
KR102587868B1 (ko)	2023-10-10	패키지, 패키지 제조 방법, 접합재가 부착된 덮개체, 및 접합재가 부착된 덮개체의 제조 방법
TWI744978B (zh)	2021-11-01	發光裝置的蓋件及蓋件的製造方法
CN113161467B (zh)	2024-07-02	发光装置和水杀菌装置
TWI734068B (zh)	2021-07-21	半導體發光裝置及其製造方法
JP2022112336A (ja)	2022-08-02	発光装置のリッド
JP6548404B2 (ja)	2019-07-24	多層基板、発光装置および多層基板の製造方法
JP2013219237A (ja)	2013-10-24	真空パッケージおよびその製造方法
JP3783605B2 (ja)	2006-06-07	気密封止パッケージおよびこれを用いたデバイス
TWI713990B (zh)	2020-12-21	透光性材料構成之密封用蓋
TW202205547A (zh)	2022-02-01	蓋構件、蓋構件的製造方法、包裝盒及包裝盒的製造方法
CN117897643A (zh)	2024-04-16	附膜构件和光学器件
TW202023991A (zh)	2020-07-01	封裝用蓋材及封裝
TW202030504A (zh)	2020-08-16	稜鏡、光裝置、稜鏡之製造方法及封裝裝置之製造方法
JP2006121118A (ja)	2006-05-11	気密封止パッケージおよびこれを用いたデバイスの製造方法