TWI781168B - 真空蒸鍍用遮罩之洗淨方法及淋洗組成物 - Google Patents
真空蒸鍍用遮罩之洗淨方法及淋洗組成物 Download PDFInfo
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- TWI781168B TWI781168B TW107114473A TW107114473A TWI781168B TW I781168 B TWI781168 B TW I781168B TW 107114473 A TW107114473 A TW 107114473A TW 107114473 A TW107114473 A TW 107114473A TW I781168 B TWI781168 B TW I781168B
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- 150000002576 ketones Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000001139 pH measurement Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- BNIXVQGCZULYKV-UHFFFAOYSA-N pentachloroethane Chemical compound ClC(Cl)C(Cl)(Cl)Cl BNIXVQGCZULYKV-UHFFFAOYSA-N 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- 229950003332 perflubutane Drugs 0.000 description 1
- NJCBUSHGCBERSK-UHFFFAOYSA-N perfluoropentane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F NJCBUSHGCBERSK-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- 239000000523 sample Substances 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
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- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
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- 229920002554 vinyl polymer Polymers 0.000 description 1
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Abstract
本發明課題為一種洗淨方法,係真空蒸鍍用遮罩之洗淨方法,該方法係以洗淨組成物洗淨遮罩,再以淋洗組成物淋洗洗淨後之遮罩,前述洗淨組成物含有選自N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺中之至少1種,前述淋洗組成物含有選自HFE-347pc-f、HFE-254pc、HFE-356pcf及HFE-449mec-f中之至少1種氫氟醚。藉由該洗淨方法,在洗淨於有機EL元件製造時之真空蒸鍍步驟中使用的遮罩時,於淋洗洗淨組成物之際不會伴隨有效成分分解,而可將遮罩清洗得極為乾淨。
Description
本發明涉及一種真空蒸鍍用遮罩之洗淨方法及淋洗組成物。
發明背景 近年,在平板顯示器方面,具備液晶顯示裝置或有機EL元件之顯示裝置備受矚目。液晶顯示裝置低耗電,但為了獲得明亮的畫面,需要外部照明(背光)。相對於此,具備有機EL元件之顯示裝置因為有機EL元件為自發光型元件,所以無需設置像液晶顯示裝置的背光。因此,具備有機EL元件之顯示裝置具有省電的特徵,同時更兼具高亮度、廣視角的特質。
有機EL元件在陽極與陰極之間具有功能層,該功能層含有由有機化合物構成之發光層。形成這種功能層之方法周知有真空蒸鍍法等氣相製程(亦稱乾式法)或液相製程(亦稱濕式法或塗佈法)(譬如參考專利文獻1~3),前述液相製程中會使用已使功能層形成材料溶解或分散於溶劑中之溶液。
利用真空蒸鍍形成功能層時,會將遮罩貼近基板,並隔著遮罩將陰極、電洞注入層、電洞輸送層、發光層、電子輸送層、陽極等各層予以圖案形成。此時使用之蒸鍍用遮罩,尤其是用於RGB層之微細圖案化的蒸鍍用遮罩相當高精細,所以很難製造,而且單價十分高昂。但,在形成有機EL元件中之有機層的圖案時,如果將同一遮罩多次用於蒸鍍,有機物會堆積附著至遮罩上,因而變地無法將高精細的遮罩圖案正確轉印至基板上。所以,為了實現高精細的遮罩圖案,不得不廢棄已使用多次的高價遮罩,從生產成本面向來看,實為難以量產之原因之一。
爰此,為了反覆使用遮罩以降低成本進行了各種嘗試,其中有文獻提出一種洗淨液組成物,係用以洗淨在製造有機EL元件之真空蒸鍍步驟中附著於遮罩上的各種有機物(譬如參考專利文獻4)。
專利文獻4中記載,以洗淨液組成物洗淨遮罩後,再以氫氟醚淋洗。然而,專利文獻4中作為淋洗液使用之「Novec HFE7100」(C4
F9
OCH3
),會在譬如N-甲基-2-吡咯啶酮或N,N-二甲基甲醯胺之存在下分解而產生氟離子(譬如參考專利文獻5)。所以,以上述方法無法將遮罩表面清洗乾淨。
先前技術文獻 專利文獻 專利文獻1:日本特開2002-110345號公報 專利文獻2:日本特開2002-305079號公報 專利文獻3:日本特開2002-313564號公報 專利文獻4:日本特開2005-162947號公報 專利文獻5:日本特表2009-518857號公報
發明概要 發明欲解決之課題 本發明係為了解決上述課題所為,其目的在於提供一種洗淨方法及淋洗組成物,該洗淨方法係洗淨譬如在製造有機EL元件時之真空蒸鍍步驟中使用的遮罩之方法,在以淋洗組成物淋洗經洗淨組成物洗淨之遮罩時,不會伴隨淋洗組成物之有效成分分解,而可將遮罩清洗得極為乾淨。
用以解決課題之手段 實施形態之洗淨方法係真空蒸鍍用遮罩之洗淨方法,其特徵在於:以洗淨組成物洗淨遮罩,再以淋洗組成物淋洗洗淨後之遮罩,前述洗淨組成物含有選自N-甲基-2-吡咯啶酮(NMP)及N,N-二甲基甲醯胺(DMF)中之至少1種,前述淋洗組成物含有選自CF3
CH2
-O-CF2
CHF2
(HFE-347pc-f)、CHF2
CF2
-O-CH3
(HFE-254pc)、CHF2
-O-CH2
CF2
CHF2
(HFE-356pcf)及CF3
CHFCF2
-O-CH2
CF3
(HFE-449mec-f)中之至少1種氫氟醚。
在實施形態之洗淨方法中,前述氫氟醚在前述淋洗組成物中之含量比率宜為80質量%以上且100質量%以下。
在實施形態之洗淨方法中,洗淨組成物宜含有N-甲基-2-吡咯啶酮。
在實施形態之洗淨方法中,淋洗組成物宜含有CF3
CH2
-O-CF2
CHF2
。
在實施形態之洗淨方法中,遮罩之洗淨及淋洗宜均在10℃以上且40℃以下進行,且均在20℃以上且30℃以下進行較佳。
在實施形態之洗淨方法中,真空蒸鍍宜在製造低分子型有機EL元件時進行。
在實施形態之洗淨方法中,宜使經淋洗組成物淋洗後之遮罩乾燥。
實施形態之淋洗組成物係淋洗經洗淨組成物洗淨之真空蒸鍍用遮罩者,且前述洗淨組成物含有選自N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺中之至少1種;前述淋洗組成物的特徵在於:含有選自CF3
CH2
-O-CF2
CHF2
、CHF2
CF2
-O-CH3
、CHF2
-O-CH2
CF2
CHF2
及CF3
CHFCF2
-O-CH2
CF3
中之至少1種氫氟醚。
實施形態之淋洗組成中的前述氫氟醚之含量比率宜為80質量%以上且100質量%以下。
另,在本說明書中,有時會於化合物名後之括弧內註記該化合物之簡稱,並會視需求用該簡稱來替代化合物名。而且在本說明書中之符號「~」係表示其前方所載數值以上至其後方所載數值以下的範圍。
發明效果 藉由本實施形態之洗淨方法及淋洗組成物,在洗淨譬如有機EL元件製造時之真空蒸鍍步驟中使用的遮罩時,以淋洗組成物淋洗經洗淨組成物洗淨之遮罩之際,不會伴隨淋洗組成物之有效成分分解,而可將遮罩清洗得極為乾淨。
用以實施發明之形態 以下對照圖式詳細說明本發明之實施形態。 本實施形態之洗淨方法係將譬如有機EL元件製造時之真空蒸鍍步驟中使用之遮罩予以洗淨的方法,包含洗淨步驟、淋洗步驟及乾燥步驟。在本實施形態之洗淨方法中,係在洗淨步驟以洗淨組成物洗淨遮罩,且該洗淨組成物含有選自N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺中之至少1種。接著,在淋洗步驟中以淋洗組成物淋洗經洗淨組成物洗淨後的遮罩,且該淋洗組成物含有選自HFE-347pc-f、HFE-254pc、HFE-356pcf及HFE-449mec-f中之至少1種氫氟醚。然後視需求進行乾燥步驟,使遮罩乾燥。
在本實施形態之洗淨方法中,淋洗組成物中所含上述特定氫氟醚即使在洗淨組成物中之N-甲基-2-吡咯啶酮或N,N-二甲基甲醯胺的存在下也不易被分解。所以,洗淨組成物殘留在洗淨後之遮罩上時,淋洗組成物中之上述特定氫氟醚亦不會被洗淨組成物分解,而不會產生氟離子。因此,可將遮罩表面清洗得極為乾淨。
在本實施形態之洗淨方法中作為洗淨對象的遮罩係在譬如以下說明之有機EL顯示裝置的製造過程中,於真空蒸鍍步驟使用之物。
以下針對有機EL顯示裝置之製造方法,對照圖1及圖2概述使用遮罩之真空蒸鍍步驟。於玻璃基板上形成TFT(薄膜電晶體)及透明電極,並進一步形成電洞輸送層。該形成有TFT、透明電極及電洞輸送層的玻璃基板1係以玻璃基板1之被處理面向下而被搬入真空室內。在真空室內,於玻璃基板1上形成作為彩色顯示裝置之與各原色R、G、B對應的發光層。該步驟係在作為彩色顯示裝置之與各原色R、G、B對應的個別真空室內進行。即,玻璃基板1會依序被搬送至用以形成與原色R對應之發光層的真空室、用以形成與原色G對應之發光層的真空室及用以形成與原色B對應之發光層的真空室。
在圖1所示態樣中,各真空室內預先配置有配合發光層之形狀而開口的遮罩20。該遮罩20係由配置在保持台24上的遮罩框21所固定。
各真空室中具備有與R、G、B中任一原色相對應且只有與透明電極(陽極)11對應之部分開口的遮罩作為遮罩20,且該透明電極(陽極)11係用以使預定原色發光。藉此,在各真空室中,可使與各原色對應之發光層形成在各自的預定位置上。
圖1中,係從配置在保持台24下方的蒸鍍源(source)30將發光層之材料(有機EL材料)予以加熱使其蒸發,而透過遮罩之開口部將該材料蒸鍍至玻璃基板1表面。於圖2示意顯示發光層隔著該遮罩20的形成態樣。如圖2所示,各透明電極(陽極)11中,在各真空室內與該原色對應之透明電極的形成區域以外被遮罩20被覆。而且,與該原色對應之有機EL材料會在蒸鍍源30內被加熱而氣化,透過遮罩20之開口部20h蒸鍍形成至玻璃基板1(正確為其電洞輸送層)上。另,遮罩材質可舉如SUS等不鏽鋼、Ni單體、Ni合金(譬如Fe-Ni合金、Mg-Ni合金)或矽等半導體等。
在該蒸鍍步驟中,於遮罩上會附著由蒸鍍材料構成的各種有機物。蒸鍍材料除了上述有機EL材料以外,還可舉如製造有機EL元件時使用的電洞注入材料、電洞輸送材料、電子輸送材料等。電洞注入材料可舉如銅酞青(CuPC)、聚(3,4-乙烯二氧噻吩)(PEDOT)與聚苯乙烯磺酸(PSS)之複合物(PEDOT/PSS)、4,4’,4”-參[苯基(間甲苯基)胺基]三苯胺(m-MTDATA)等。電洞輸送材料可舉如三苯胺類(TPD)、二苯基・萘二胺(α-NPD)、參(4-咔唑-9-基苯基)胺(TCTA)等。有機EL材料可舉如雙苯乙烯基苯衍生物、參(8-羥基喹啉)鋁(Alq3
)、雙[2-(2-苯并唑基)酚]鋅(II)(Zn-PBO)、紅螢烯、二甲基喹吖酮、N,N’-二甲基喹吖酮(DMQ)、4-(二氰基亞甲基)-2-甲基-6-[2-(2,3,6,7-四氫-1H,5H-苯并[ij]喹-9-基)乙烯基]-4H-哌喃(DCM2)等。電子輸送材料可舉如Alq3
、2,9-二甲基-4,7-二苯基-1,10-啡啉(BCP)、2-苯基-5-(4-聯苯基)-1,3,4-二唑(PBD)、噻咯(silole)衍生物等。
在本實施形態之洗淨方法的洗淨步驟中,係以洗淨組成物洗淨附著於該遮罩之有機物,該洗淨組成物含有選自N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺中之至少1種。洗淨方法有將遮罩浸漬於洗淨組成物之方法、利用噴射水流對遮罩噴吹洗淨組成物的方法等。另,在遮罩洗淨時,亦可並用超音波洗淨,藉此可提高溶解能力,縮短洗淨時間。基於洗淨性觀點,洗淨步驟中使用之洗淨組成物宜含有N-甲基-2-吡咯啶酮。
從可充分洗淨遮罩的觀點來看,洗淨步驟中使用之洗淨組成物中的N-甲基-2-吡咯啶酮或N,N-二甲基甲醯胺之含有比率宜為80~100質量%,且95~100質量%較佳,98~100質量%更佳。洗淨組成物含有N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺兩者時,在可充分洗淨遮罩的觀點下,該等合計含有比率宜在上述理想範圍內。
洗淨組成物可在不損及本實施形態效果的範圍內,含有N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺以外的成分。這類成分可舉如以下成分,惟不在此限:庚烷、己烷、庚烷、辛烷、壬烷、環丁烷、環戊烷、環己烷、環己烷等飽和烴類;1-丁烯、2-丁烯、2-甲基丙烯、1-戊烯、2-戊烯、1-丁炔、2-丁炔、戊炔、環丙烯、環丁烯、環戊烯、環己烯等不飽和烴類;甲醇、乙醇、正丙醇、異丙醇、正丁醇、異丁醇、二級丁醇、三級丁醇等醇類;二甲基醚、乙基甲基醚、二乙基醚、二異丙基醚、甲基-三級丁基醚、四氟乙醇等醚類;丙酮、甲基乙基酮、二乙基酮、甲基丙基酮、甲基異丁基酮、環戊酮、環己酮等酮類;甲酸甲酯、甲酸乙酯、甲酸丙酯、乙酸甲酯、乙酸乙酯、乙酸丙酯、丁酸甲酯、丁酸乙酯、γ-丁內酯等酯類;單甲胺、二甲胺、三甲胺等胺類;二氯甲烷、1,1-二氯乙烷、1,2-二氯乙烷、1,1,2-三氯乙烷、1,1,1,2-四氯乙烷、1,1,2,2-四氯乙烷、五氯乙烷、1,1-二氯乙烯、順-1,2-二氯乙烯、反-1,2-二氯乙烯、三氯乙烯、四氯乙烯、1,2-二氯丙烷等氯碳類;1,1,1,3,3-五氟丁烷、1,1,1,2,2,3,4,5,5,5-十氟戊烷、1,1,2,2,3,3,4-七氟環戊烷、1,1,1,2,2,3,3,4,4-九氟己烷、1,1,1,2,2,3,3,4,4,5,5,6,6-十三氟己烷、1,1,1,2,2,3,3,4,4,5,5,6,6-十三氟辛烷等HFC(氫氟碳)類;十氟丁烷、十二氟戊烷、十四氟己烷、十六氟庚烷、十八氟辛烷等PFC(全氟碳)類;二氯五氟丙烷、1,1-二氯-1-氟乙烷、1-氯-1,1-二氟乙烷、2,2-二氯-1,1,1-三氟乙烷等HCFC(氫氯氟碳)類等。又,該等成分可單獨含有,亦可含有多種。
洗淨組成物含有N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺以外的成分時,該等含有比率宜為20質量%以下,且5質量%以下較佳,2質量%以下更佳。洗淨組成物中所含N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺以外的成分亦可為上述中不具洗淨效果之成分。另,洗淨組成物中若含有水分,水分可能會附著於遮罩表面,產生水斑而降低溶劑組成物之洗淨力,所以洗淨組成物中之水含量宜為5質量%以下,且3質量%以下較佳,1質量%以下更佳。洗淨組成物不含水尤佳。
進行洗淨步驟之時間依遮罩大小或附著之有機物種類及量等決定,譬如5~15分鐘即可。洗淨步驟中之洗淨組成物的溫度不用調節溫度,常溫即可,宜為10~40℃,且更宜為20~30℃。如此一來,使用含有選自N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺中之至少1種的洗淨組成物,在上述溫度範圍內進行洗淨,可有優異的洗淨性,而且不會因為洗淨時的熱而發生遮罩變形、應變等情況。
又,在洗淨步驟中,僅以上述洗淨組成物便可充分除去附著於各種遮罩表面上的1種或2種以上有機物。所以,無須洗淨液種類不同的洗淨槽,其結果可使洗淨製程變得非常簡便。
另,洗淨組成物亦可將使用完畢的洗淨液組成物予以蒸餾而再利用。洗淨組成物含有N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺以外之成分時,亦可將使用完畢的洗淨液組成物予以蒸餾並將所回收之液體組成進行調整後再使用。
本實施形態之洗淨方法的淋洗步驟係以淋洗組成物淋洗經洗淨組成物洗淨之遮罩。在本說明書中,淋洗意指去除附著在經洗淨組成物洗淨後之遮罩上的洗淨組成物。
淋洗洗淨後之遮罩的方法可舉如:將洗淨後之遮罩浸漬於淋洗組成物的方法、以淋洗組成物淋洗洗淨後之遮罩的方法等。兩種方法皆可輕易地去除附著在洗淨後之遮罩表面上的洗淨組成物,而可將遮罩表面淋洗得極為乾淨。進行淋洗步驟之時間依遮罩大小等決定,譬如5~15分鐘即可。淋洗步驟鐘之淋洗組成物的溫度不用調節溫度,常溫即可,宜為10~40℃,且20~30℃更佳。如此一來,可在較低溫度下進行淋洗,所以不會因熱使遮罩發生變形、應變等。
淋洗組成物含有選自HFE-347pc-f、HFE-254pc、HFE-356pcf及HFE-449mec-f中之至少1種氫氟醚作為有效成分。HFE-347pc-f、HFE-254pc、HFE-356pcf及HFE-449mec-f的沸點皆低至74℃以下,乾燥性佳,室溫下也容易蒸發。又,就算使其沸騰變成蒸氣,也不易對樹脂零件等易受熱影響的零件帶來不良影響。淋洗組成物可單獨使用1種上述氫氟醚,亦可將2種以上併用。
HFE-347pc-f的臭氧破壞潛勢為零,全球暖化潛勢小。HFE-347pc-f的沸點為56℃。HFE-347pc-f譬如可利用在非質子性極性溶媒及觸媒(鹼金屬烷氧化物或鹼金屬氫氧化物)之存在下,使2,2,2-三氟乙醇與四氟乙烯反應的方法(參考國際公開第2004/108644號)來製造。 HFE-347pc-f之市售物可舉如「ASAHIKLIN(註冊商標)AE-3000」(旭硝子公司製)。
HFE-254pc的臭氧破壞潛勢為零,全球暖化潛勢小。HFE-254pc的沸點為37℃。HFE-254pc譬如可利用於強鹼(譬如氫氧化鉀)共存下之甲醇加入四氟乙烯的方法來製造。
HFE-356pcf的臭氧破壞潛勢為零,全球暖化潛勢小。HFE-356pcf的沸點為74℃。HFE-356pcf譬如可利用於強鹼(譬如氫氧化鉀)共存下之四氟丙醇(TFPO)加入氯二氟甲烷(HCFC-22)的方法來製造。
HFE-449mec-f的臭氧破壞潛勢為零,全球暖化潛勢小。HFE-449mec-f的沸點為73℃。HFE-449mec-f譬如可利用在非質子性極性溶媒及觸媒(鹼金屬烷氧化物或鹼金屬氫氧化物)之存在下使2,2,2-三氟乙醇與六氟丙烯反應的方法(參考日本特開平9-263559號)來製造。
洗淨組成物中之N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺對淋洗組成物中任何氫氟醚皆具有優異的溶解性。所以,洗淨組成物可極為容易地被淋洗組成物去除。又,上述氫氟醚不會被洗淨組成物中所含N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺任一者分解。所以,淋洗後之遮罩表面上不會殘留氟離子,而可將遮罩清洗得極為乾淨。
在此,用於淋洗組成物之氫氟醚不會被洗淨組成物中所含N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺分解的理由推測如下。
譬如,像甲基-全氟-n-丁基醚(C4
F9
OCH3
、HFE-449sl)具有電子吸引性強之CF3
-基的氫氟醚類,鍵結有CF3
-基的碳係呈現電子不足的狀態。而於鍵結有CF3
-基的碳鍵結有鹵素原子等容易脫離的原子或原子團時,會受到來自N-甲基-2-吡咯啶酮或N,N-二甲基甲醯胺的親核攻擊而變得容易分解。相對地,本實施形態中使用之淋洗組成物中的氫氟醚不具有CF3
-基,或者即使具有CF3
-基,CF3
-鍵結的碳上也不會鍵結容易脫離的原子或原子團。所以,不容易在分子內發生電荷偏移,便不容易受到來自N-甲基-2-吡咯啶酮或N,N-二甲基甲醯胺的親核攻擊。
從可充分去除洗淨組成物的觀點及乾燥性優異的觀點來看,本實施形態之洗淨方法中使用之淋洗組成物宜含有HFE-347pc-f。
本實施形態之洗淨方法中使用的淋洗組成物中之上述氫氟醚的含有比率,從可充分淋洗遮罩的觀點來看宜為80~100質量%,且95~100質量%較佳,98~100質量%更佳。淋洗組成物含有2種以上上述氫氟醚時,在可充分淋洗遮罩的觀點下,其合計含有比率宜在上述理想範圍內。
淋洗組成物可在不損及本發明效果的前提下含有上述氫氟醚以外的成分。上述氫氟醚以外之成分可舉如,與上述洗淨組成物中N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺以外之成分同樣的成分,惟不限於該等。又,該等成分可單獨含有,亦可含有多種。
淋洗組成物含有上述氫氟醚以外之成分時,該成分之含有比率宜為20質量%以下,且5質量%以下較佳,2質量%以下更佳。
如上述,洗淨組成物中若含有水分,水分可能會附著於遮罩表面,產生水斑。淋洗組成物含有選自甲基醇、乙基醇、正丙醇、異丙醇中之至少1種醇時,即使洗淨組成物中含有水分,也可將其水分溶解去除,故為適宜。淋洗組成物含有上述醇時,從可充分去除水分的觀點來看,淋洗組成物中之醇含量比率宜為10質量%以下,且1~8質量%較佳,2~5質量%更佳。
在本實施形態之洗淨方法的乾燥步驟中,在淋洗步驟中使淋洗後之遮罩乾燥。乾燥方法可使用利用自然乾燥使淋洗後之遮罩乾燥的方法、利用噴氣使其乾燥的方法、利用減壓使其乾燥之方法等。其中,從可使遮罩更有效乾燥的觀點來看,以利用減壓使其乾燥之方法為宜。
在利用噴氣使其乾燥之方法中,譬如宜噴吹10~40℃且更宜為20~30℃之乾燥空氣,來使其乾燥。如此一來,可在較低溫度下乾燥,所以不會因熱使遮罩發生變形、應變等。
利用減壓使遮罩乾燥時的壓力,因為減壓需要時間,所以減壓度愈小愈適宜。惟,淋洗組成物在遮罩上的附著量若少,便可在減壓過程乾燥,所以可因應遮罩大小或淋洗組成物在遮罩上的附著量來適宜設定,譬如宜設定在淋洗組成物之20℃蒸氣壓以上且101.3kPa以下之範圍內。例如,當淋洗組成物係由HFE-347pc-f構成時,在乾燥步驟中宜減壓至25~101.3kPa之壓力。
根據以上說明之實施形態的洗淨方法,藉由使用特定的氫氟醚作為淋洗組成物,氫氟醚都不會因洗淨時附著於遮罩上之洗淨組成物中的N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺任一者分解,而不會產生氟離子。因此,可將遮罩清洗得極為乾淨。本實施形態之洗淨方法可有效作為以真空蒸鍍法製造有機EL元件時的遮罩洗淨方法,且適宜在製造低分子型EL元件時之真空蒸鍍步驟中使用。 實施例
接下來說明實驗例及實施例。本發明不受該等實驗例及實施例限定。
(實驗例1) 在本實驗例中,調查了加熱預定時間後淋洗組成物因NMP及DMF的分解性。於HFE-347pc-f(旭硝子公司製、AE-3000)中添加5質量%之NMP或DMF、且同樣於HFE-449sl(3M公司製、Novec7100)中添加5質量%之NMP或DMF後,做出試樣液。將各試劑在55℃之恆溫槽內靜置3日。以氟離子計(DKK-TOA公司製、IM-55G、氟離子電極:DKK-TOA公司製、F-2021)測定靜置後之各溶劑試樣液中的氟離子濃度。另,氟離子濃度之檢測極限設為0.5ppm。結果列於表1。
(實驗例2) 在本實驗例中,作為加速試驗係測試了將含有HFE-347pc-f或HFE-449sl及NMP之試樣液進行加熱回流後的淋洗組成物因NMP的分解性。將於上述同樣之HFE-347pc-f(旭硝子公司製、AE-3000)中添加5質量%之NMP而成的試樣液250g放入燒瓶中,以加熱器加熱至沸騰狀態後,進行4小時回流。其後以80分鐘採取175g之餾出液,並測定所剩底殘液之pH、氟離子濃度、酸含量。結果列於表2。
又,將於上述同樣之HFE-449sl(3M公司製、Novec7100)中添加5質量%之NMP而成的試樣液250g放入燒瓶中,以加熱器加熱使其沸騰後,進行4小時回流。其後以80分鐘採取175g之餾出液,並測定所剩底殘液之pH、氟離子濃度、酸含量。另,pH測定係以pH計(DKK-TOA公司製、HM-25R、電極:DKK-TOA公司製、GST-5741C)進行,氟離子濃度測定係以氟離子計(DKK-TOA公司製、IM-55G、氟離子電極:DKK-TOA公司製、F-2021)進行,酸含量測定則以酚肽作為指示劑利用滴定進行。氟離子濃度、酸含量的檢測極限都設為0.5ppm。結果列於表2。
從表1、表2可知,即使經過3日加熱或80分鐘的加熱回流,淋洗組成物中之HFE-347pc-f也未因NMP或DMF而分解,而未產生氟離子,但相對地,HFE-449sl有因NMP或DMF而分解,而產生氟離子。
(實施例) 調查使用HFE-347pc-f作為淋洗組成物時之金屬製遮罩的洗淨性。將附著有低分子型有機EL材料之金屬(SUS)片浸漬於室溫(25℃)之NMP中1分鐘。然後將金屬片浸漬於室溫(25℃)之HFE-347pc-f(旭硝子公司製、AE-3000)中1分鐘,加以淋洗後取出。使該金屬片自然乾燥後浸漬於純水中,再以氟離子計(DKK-TOA公司製、IM-55G、氟離子電極:DKK-TOA公司製、F-2021)測定所萃取出之氟離子濃度。另,氟離子濃度之檢測極限設為0.5ppm。於表3列出其結果,檢測出氟離子之情況表記為「檢出」,未檢測出之情況表記為「未檢出」。
(比較例) 調查使用HFE-449sl作為淋洗組成物時之金屬製遮罩的洗淨性。將附著有低分子型有機EL材料之金屬(SUS)片浸漬於室溫(25℃)之NMP中1分鐘後,再浸漬於室溫(25℃)之HFE-449sl(3M公司製、Novec7100)中1分鐘,加以淋洗後取出。使該金屬片自然乾燥後浸漬於純水中,調查有無萃取出之氟離子。其結果列於表3。
從表3可知,藉由使用HFE-347pc-f作為淋洗組成物,可將遮罩清洗乾淨。相對地,使用HFE-449sl時,遮罩表面上附著有氟離子,可知無法將遮罩清洗乾淨。
1‧‧‧玻璃基板11‧‧‧透明電極20‧‧‧遮罩20h‧‧‧開口部21‧‧‧遮罩框24‧‧‧保持台30‧‧‧蒸鍍源
圖1係有機EL顯示裝置之製造方法的說明圖。 圖2係示意顯示發光層隔著遮罩的形成態樣圖。
1‧‧‧玻璃基板
20‧‧‧遮罩
21‧‧‧遮罩框
24‧‧‧保持台
30‧‧‧蒸鍍源
Claims (8)
- 一種洗淨方法,係真空蒸鍍用遮罩之洗淨方法,其特徵在於:以洗淨組成物洗淨前述遮罩,再以淋洗組成物淋洗洗淨後之前述遮罩,前述洗淨組成物含有選自N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺中之至少1種,前述淋洗組成物含有選自CF3CH2-O-CF2CHF2、CHF2CF2-O-CH3、CHF2-O-CH2CF2CHF2及CF3CHFCF2-O-CH2CF3中之至少1種氫氟醚;並且,前述氫氟醚在前述淋洗組成物中之含量比率為80質量%以上且100質量%以下。
- 如請求項1之洗淨方法,其中前述洗淨組成物含有N-甲基-2-吡咯啶酮。
- 如請求項1之洗淨方法,其中前述淋洗組成物含有CF3CH2-O-CF2CHF2。
- 如請求項1至3中任一項之洗淨方法,其中前述遮罩之洗淨及淋洗皆在10℃以上且40℃以下進行。
- 如請求項1至3中任一項之洗淨方法,其中前述遮罩之洗淨及淋洗皆在20℃以上且30℃以下進行。
- 如請求項1至3中任一項之洗淨方法,其中前述真空蒸鍍係在製造低分子型有機EL元件時進行。
- 如請求項1至3中任一項之洗淨方法,其 使經前述淋洗組成物淋洗後之遮罩乾燥。
- 一種淋洗組成物,係淋洗經洗淨組成物洗淨之真空蒸鍍用遮罩者,前述洗淨組成物含有選自N-甲基-2-吡咯啶酮及N,N-二甲基甲醯胺中之至少1種;前述淋洗組成物之特徵在於:含有選自CF3CH2-O-CF2CHF2、CHF2CF2-O-CH3、CHF2-O-CH2CF2CHF2及CF3CHFCF2-O-CH2CF3中之至少1種氫氟醚;並且,前述氫氟醚在前述淋洗組成物中之含量比率為80質量%以上且100質量%以下。
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Publication number | Priority date | Publication date | Assignee | Title |
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US20070129273A1 (en) | 2005-12-07 | 2007-06-07 | Clark Philip G | In situ fluoride ion-generating compositions and uses thereof |
JP4775852B2 (ja) * | 2006-10-23 | 2011-09-21 | Jx日鉱日石エネルギー株式会社 | 焼結部品の洗浄方法 |
JP5085954B2 (ja) * | 2007-02-23 | 2012-11-28 | スリーエム イノベイティブ プロパティズ カンパニー | フッ素系溶剤含有溶液の精製方法及び精製装置ならびに洗浄装置 |
CN101679922B (zh) * | 2007-06-08 | 2011-11-09 | 旭硝子株式会社 | 清洗溶剂及清洗方法 |
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