TWI779153B - 基板處理裝置及基板處理方法 - Google Patents
基板處理裝置及基板處理方法 Download PDFInfo
- Publication number
- TWI779153B TWI779153B TW108101331A TW108101331A TWI779153B TW I779153 B TWI779153 B TW I779153B TW 108101331 A TW108101331 A TW 108101331A TW 108101331 A TW108101331 A TW 108101331A TW I779153 B TWI779153 B TW I779153B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- unit
- cleaning
- liquid
- cleaning process
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018004228A JP7045196B2 (ja) | 2018-01-15 | 2018-01-15 | 基板処理装置及び基板処理方法 |
JP2018-004228 | 2018-10-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201941285A TW201941285A (zh) | 2019-10-16 |
TWI779153B true TWI779153B (zh) | 2022-10-01 |
Family
ID=67398998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108101331A TWI779153B (zh) | 2018-01-15 | 2019-01-14 | 基板處理裝置及基板處理方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7045196B2 (ko) |
KR (1) | KR102613941B1 (ko) |
TW (1) | TWI779153B (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102375576B1 (ko) * | 2019-12-12 | 2022-03-17 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200933783A (en) * | 2007-09-28 | 2009-08-01 | Tokyo Electron Ltd | Substrate cleaning device, substrate processing device, substrate cleaning method, substrate processing method, and storage medium |
TW201110231A (en) * | 2009-06-30 | 2011-03-16 | Hitachi Int Electric Inc | Substrate processing method and substrate processing apparatus |
TW201243936A (en) * | 2011-03-04 | 2012-11-01 | Mitsubishi Gas Chemical Co | Substrate processing apparatus and substrate processing method |
JP2013247299A (ja) * | 2012-05-28 | 2013-12-09 | Tokyo Ohka Kogyo Co Ltd | 洗浄装置及び洗浄方法 |
TW201546895A (zh) * | 2014-02-17 | 2015-12-16 | Hitachi Int Electric Inc | 清洗方法,半導體裝置之製造方法,基板處理裝置及記錄媒體 |
TW201611159A (zh) * | 2014-09-02 | 2016-03-16 | Hitachi Int Electric Inc | 半導體裝置之製造方法、基板處理裝置及記錄媒體 |
TW201703884A (zh) * | 2015-03-24 | 2017-02-01 | 思可林集團股份有限公司 | 基板處理方法及基板處理裝置 |
TW201705261A (zh) * | 2015-02-18 | 2017-02-01 | 思可林集團股份有限公司 | 基板處理裝置 |
TW201707059A (zh) * | 2015-03-27 | 2017-02-16 | 思可林集團股份有限公司 | 基板處理裝置及基板處理方法 |
TW201742111A (zh) * | 2016-02-17 | 2017-12-01 | 斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5291392B2 (ja) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | 支持板剥離装置 |
JP5448619B2 (ja) * | 2009-07-21 | 2014-03-19 | 東京応化工業株式会社 | サポートプレートの洗浄方法 |
JP6214182B2 (ja) * | 2013-03-25 | 2017-10-18 | 東京応化工業株式会社 | 基板の処理方法 |
JP6114610B2 (ja) * | 2013-03-29 | 2017-04-12 | 東京応化工業株式会社 | 処理方法及び処理装置 |
JP6381994B2 (ja) * | 2014-06-27 | 2018-08-29 | 東京応化工業株式会社 | 剥離用組成物及び剥離方法 |
JP6194394B2 (ja) * | 2016-07-28 | 2017-09-06 | 東京応化工業株式会社 | 半導体装置の製造方法 |
-
2018
- 2018-01-15 JP JP2018004228A patent/JP7045196B2/ja active Active
- 2018-11-19 KR KR1020180142651A patent/KR102613941B1/ko active IP Right Grant
-
2019
- 2019-01-14 TW TW108101331A patent/TWI779153B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200933783A (en) * | 2007-09-28 | 2009-08-01 | Tokyo Electron Ltd | Substrate cleaning device, substrate processing device, substrate cleaning method, substrate processing method, and storage medium |
TW201110231A (en) * | 2009-06-30 | 2011-03-16 | Hitachi Int Electric Inc | Substrate processing method and substrate processing apparatus |
TW201243936A (en) * | 2011-03-04 | 2012-11-01 | Mitsubishi Gas Chemical Co | Substrate processing apparatus and substrate processing method |
JP2013247299A (ja) * | 2012-05-28 | 2013-12-09 | Tokyo Ohka Kogyo Co Ltd | 洗浄装置及び洗浄方法 |
TW201546895A (zh) * | 2014-02-17 | 2015-12-16 | Hitachi Int Electric Inc | 清洗方法,半導體裝置之製造方法,基板處理裝置及記錄媒體 |
TW201611159A (zh) * | 2014-09-02 | 2016-03-16 | Hitachi Int Electric Inc | 半導體裝置之製造方法、基板處理裝置及記錄媒體 |
TW201705261A (zh) * | 2015-02-18 | 2017-02-01 | 思可林集團股份有限公司 | 基板處理裝置 |
TW201703884A (zh) * | 2015-03-24 | 2017-02-01 | 思可林集團股份有限公司 | 基板處理方法及基板處理裝置 |
TW201707059A (zh) * | 2015-03-27 | 2017-02-16 | 思可林集團股份有限公司 | 基板處理裝置及基板處理方法 |
TW201742111A (zh) * | 2016-02-17 | 2017-12-01 | 斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201941285A (zh) | 2019-10-16 |
KR20190087274A (ko) | 2019-07-24 |
JP7045196B2 (ja) | 2022-03-31 |
KR102613941B1 (ko) | 2023-12-15 |
JP2019125646A (ja) | 2019-07-25 |
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