TWI779153B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TWI779153B
TWI779153B TW108101331A TW108101331A TWI779153B TW I779153 B TWI779153 B TW I779153B TW 108101331 A TW108101331 A TW 108101331A TW 108101331 A TW108101331 A TW 108101331A TW I779153 B TWI779153 B TW I779153B
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TW
Taiwan
Prior art keywords
substrate
unit
cleaning
liquid
cleaning process
Prior art date
Application number
TW108101331A
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English (en)
Chinese (zh)
Other versions
TW201941285A (zh
Inventor
岩田泰昌
Original Assignee
日商東京應化工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京應化工業股份有限公司 filed Critical 日商東京應化工業股份有限公司
Publication of TW201941285A publication Critical patent/TW201941285A/zh
Application granted granted Critical
Publication of TWI779153B publication Critical patent/TWI779153B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW108101331A 2018-01-15 2019-01-14 基板處理裝置及基板處理方法 TWI779153B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018004228A JP7045196B2 (ja) 2018-01-15 2018-01-15 基板処理装置及び基板処理方法
JP2018-004228 2018-10-30

Publications (2)

Publication Number Publication Date
TW201941285A TW201941285A (zh) 2019-10-16
TWI779153B true TWI779153B (zh) 2022-10-01

Family

ID=67398998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108101331A TWI779153B (zh) 2018-01-15 2019-01-14 基板處理裝置及基板處理方法

Country Status (3)

Country Link
JP (1) JP7045196B2 (ko)
KR (1) KR102613941B1 (ko)
TW (1) TWI779153B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102375576B1 (ko) * 2019-12-12 2022-03-17 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200933783A (en) * 2007-09-28 2009-08-01 Tokyo Electron Ltd Substrate cleaning device, substrate processing device, substrate cleaning method, substrate processing method, and storage medium
TW201110231A (en) * 2009-06-30 2011-03-16 Hitachi Int Electric Inc Substrate processing method and substrate processing apparatus
TW201243936A (en) * 2011-03-04 2012-11-01 Mitsubishi Gas Chemical Co Substrate processing apparatus and substrate processing method
JP2013247299A (ja) * 2012-05-28 2013-12-09 Tokyo Ohka Kogyo Co Ltd 洗浄装置及び洗浄方法
TW201546895A (zh) * 2014-02-17 2015-12-16 Hitachi Int Electric Inc 清洗方法，半導體裝置之製造方法，基板處理裝置及記錄媒體
TW201611159A (zh) * 2014-09-02 2016-03-16 Hitachi Int Electric Inc 半導體裝置之製造方法、基板處理裝置及記錄媒體
TW201703884A (zh) * 2015-03-24 2017-02-01 思可林集團股份有限公司 基板處理方法及基板處理裝置
TW201705261A (zh) * 2015-02-18 2017-02-01 思可林集團股份有限公司 基板處理裝置
TW201707059A (zh) * 2015-03-27 2017-02-16 思可林集團股份有限公司 基板處理裝置及基板處理方法
TW201742111A (zh) * 2016-02-17 2017-12-01 斯庫林集團股份有限公司 基板處理裝置及基板處理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5291392B2 (ja) * 2008-06-18 2013-09-18 東京応化工業株式会社 支持板剥離装置
JP5448619B2 (ja) * 2009-07-21 2014-03-19 東京応化工業株式会社 サポートプレートの洗浄方法
JP6214182B2 (ja) * 2013-03-25 2017-10-18 東京応化工業株式会社 基板の処理方法
JP6114610B2 (ja) * 2013-03-29 2017-04-12 東京応化工業株式会社 処理方法及び処理装置
JP6381994B2 (ja) * 2014-06-27 2018-08-29 東京応化工業株式会社 剥離用組成物及び剥離方法
JP6194394B2 (ja) * 2016-07-28 2017-09-06 東京応化工業株式会社 半導体装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200933783A (en) * 2007-09-28 2009-08-01 Tokyo Electron Ltd Substrate cleaning device, substrate processing device, substrate cleaning method, substrate processing method, and storage medium
TW201110231A (en) * 2009-06-30 2011-03-16 Hitachi Int Electric Inc Substrate processing method and substrate processing apparatus
TW201243936A (en) * 2011-03-04 2012-11-01 Mitsubishi Gas Chemical Co Substrate processing apparatus and substrate processing method
JP2013247299A (ja) * 2012-05-28 2013-12-09 Tokyo Ohka Kogyo Co Ltd 洗浄装置及び洗浄方法
TW201546895A (zh) * 2014-02-17 2015-12-16 Hitachi Int Electric Inc 清洗方法，半導體裝置之製造方法，基板處理裝置及記錄媒體
TW201611159A (zh) * 2014-09-02 2016-03-16 Hitachi Int Electric Inc 半導體裝置之製造方法、基板處理裝置及記錄媒體
TW201705261A (zh) * 2015-02-18 2017-02-01 思可林集團股份有限公司 基板處理裝置
TW201703884A (zh) * 2015-03-24 2017-02-01 思可林集團股份有限公司 基板處理方法及基板處理裝置
TW201707059A (zh) * 2015-03-27 2017-02-16 思可林集團股份有限公司 基板處理裝置及基板處理方法
TW201742111A (zh) * 2016-02-17 2017-12-01 斯庫林集團股份有限公司 基板處理裝置及基板處理方法

Also Published As

Publication number Publication date
TW201941285A (zh) 2019-10-16
KR20190087274A (ko) 2019-07-24
JP7045196B2 (ja) 2022-03-31
KR102613941B1 (ko) 2023-12-15
JP2019125646A (ja) 2019-07-25

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