TWI771538B - 元件晶片的製造方法及拾取裝置 - Google Patents
元件晶片的製造方法及拾取裝置 Download PDFInfo
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Abstract
[課題]提供一種元件晶片的製造方法,不需要使用以往的黏著膠帶就可將被加工物進行加工來製造複數個元件晶片。 [解決手段]一種元件晶片的製造方法,包含:載置步驟,隔著由絕緣體構成之片材將被加工物載置於工作台上;吸附步驟,在工作台的一對電極上施加電壓,使片材藉由靜電力而吸附在被加工物上;搬出步驟,將吸附有片材之狀態的被加工物從工作台搬出;分割步驟,將吸附有片材之狀態的被加工物進行加工,而將被加工物分割成與元件對應之複數個元件晶片;及剝離步驟,使導電性的探針接觸在片材的與元件晶片對應之區域上,並在探針上施加電壓,解除片材對元件晶片的吸附,而將元件晶片從片材剝離。
Description
發明領域 本發明是有關於一種將半導體晶圓等進行加工來製造複數個元件晶片之元件晶片的製造方法、及在該元件晶片的製造方法中所使用之拾取裝置。
發明背景 將以半導體晶圓或封裝基板為代表之板狀的被加工物進行加工而分割成複數個晶片之時,例如是使用裝設有環狀的切割刀片之切割裝置或具備雷射振盪器之雷射加工裝置等的加工裝置。一邊使旋轉之切割刀片切入被加工物,或是一邊在被加工物上照射雷射光束,一邊使該被加工物移動,藉此便可沿著移動的路徑來將被加工物進行加工而分割成複數個元件晶片(例如,參照專利文獻1)。
在藉由如上述的加工裝置來將被加工物進行加工之前,通常會將直徑大於被加工物的黏著膠帶(切割膠帶)貼附在被加工物上,並且還會將環狀的框架固定在該黏著膠帶的外周部分。藉此,可保護被加工物不會受到加工或搬送等之時所施加的衝擊。又,由於分割被加工物所得到之複數個元件晶片不會到處分散,因此可輕易地搬送該等複數個元件晶片(例如,參照專利文獻2)。 先前技術文獻 專利文獻
專利文獻1:日本專利特開2012-84720號公報 專利文獻2:日本專利特開平9-27543號公報
發明概要 發明欲解決之課題 此外,在貼附於被加工物之黏著膠帶上,有使用具有較強黏著力之黏著劑,其黏著力強到被加工物的位置在加工之時不會偏移的程度。因此,例如,在分割被加工物而得到複數個晶片之後,即使試圖將該晶片從黏著膠帶剝離,也會有無法輕易地剝離之情況。又,由於無法再次使用該黏著膠帶,因此對於元件晶片的製造所需要的總成本,不一定可充分地壓低黏著膠帶之成本。
本發明是有鑑於此問題點而作成之發明,其目的在於提供一種不需要使用以往的黏著膠帶就可將被加工物進行加工來製造複數個元件晶片之元件晶片的製造方法、及該元件晶片的製造方法中所使用之拾取裝置。 用以解決課題之手段
根據本發明的一態樣,提供一種元件晶片的製造方法,是分割被加工物來製造複數個元件晶片之元件晶片的製造方法,前述被加工物包含:基板,由絕緣體或半導體構成,並具有藉由格子狀的分割預定線劃分成複數個區域之正面;及複數個元件,分別設置於該基板的該複數個區域中,該元件晶片的製造方法包含:載置步驟,隔著由絕緣體構成之片材將該被加工物載置於工作台上,前述工作台具有將一對電極隔著間隔設置於面方向上之保持面;吸附步驟,在實施該載置步驟之後,在該工作台的該一對電極上施加電壓,而使該片材與該被加工物分別發生極化,並使該片材藉由該靜電力而吸附在該被加工物上;搬出步驟,在實施該吸附步驟之後,將吸附有該片材之狀態的該被加工物從該工作台搬出;分割步驟,在實施該搬出步驟之後,將吸附有該片材之狀態的該被加工物進行加工,而將該被加工物分割成與該元件對應之複數個元件晶片;及剝離步驟,在實施該分割步驟之後,使導電性的探針接觸在該片材的與該元件晶片對應之區域上,並在該探針上施加電壓,解除該片材對該元件晶片的吸附,而將該元件晶片從該片材剝離,在該載置步驟中,將該被加工物的與各元件對應之區域配置在該保持面的該一對電極共同存在之區域。
在本發明的一態樣中,較佳的是在該剝離步驟中,在該探針上施加正負電壓的其中一者,使該片材與該元件晶片的極化狀態變化之後,在該探針上施加正負電壓的另一者,使該片材的極化狀態反轉,藉此解除該片材對該元件晶片的吸附。
又,在本發明的一態樣中,該分割步驟可更包含:改質層形成步驟,照射對該基板具有穿透性之波長的雷射光束,在該基板的內部形成沿著該分割預定線的改質層;及擴張步驟,在該改質層形成步驟之後,擴張該片材且以該改質層為起點來使該被加工物斷裂而分割成複數個該元件晶片。
又,根據本發明的另一態樣,提供一種拾取裝置,是將藉由靜電力而吸附有由絕緣體構成之片材的元件晶片從該片材進行拾取之拾取裝置,該拾取裝置包含:固定部,固定該片材;探針,具有導電性並且接觸在該片材的與該元件晶片對應之區域;電壓施加單元,對該探針施加電壓;及拾取工具,配合在已接觸於該片材之狀態的該探針上施加電壓之時間點,來拾取該元件晶片。 發明效果
在本發明的一態樣之元件晶片的製造方法中,是隔著由絕緣體構成之片材將被加工物載置於工作台上,工作台具有將一對電極隔著間隔設置於面方向上之保持面,之後,在工作台的一對電極上施加電壓,而使片材與被加工物分別發生極化,以使片材藉由靜電力而吸附在被加工物上,因此不需要使用以往的黏著膠帶就可將被加工物進行加工。
又,在本發明的一態樣之元件晶片的製造方法中,是將被加工物的與各元件對應之區域配置在工作台的保持面的一對電極共同存在之區域中,因此當在工作台的一對電極上施加電壓時,片材會強烈地吸附在被加工物的與各元件對應之區域。因此,將被加工物分割成複數個元件晶片之時,或是將被加工物分割成複數個元件晶片之後,各個元件晶片不會輕易地從片材剝落。
再者,在本發明的一態樣之元件晶片的製造方法中,是在將元件晶片從片材剝離之時,使導電性的探針接觸在片材的與元件晶片對應之區域上, 並且在該探針上施加電壓,因此可根據必要性來解除片材對元件晶片的吸附,而可將元件晶片輕易地從片材剝離。
用以實施發明之形態 參照附圖,針對本發明的一態樣之實施形態來進行說明。本實施形態之元件晶片的製造方法包含:載置步驟(參照圖3) 、吸附步驟(參照圖4(A)及圖4(B))、搬出步驟(參照圖5)、分割步驟(參照圖6、圖7(A)及圖7(B))、以及剝離步驟(參照圖8、圖9(A)、圖9(B)、圖9(C)及圖10)。
在載置步驟中,隔著由絕緣體構成之片材,將會被分割成元件晶片之被加工物等載置於工作台上,該工作台具有已設置了一對電極之保持面。在吸附步驟中,在工作台的一對電極上施加電壓,而使片材與被加工物分別發生極化,並使片材藉由靜電力而吸附在被加工物上。在搬出步驟中,將吸附有片材之狀態的被加工物從工作台搬出。
在分割步驟中,將吸附有片材之狀態的被加工物進行加工而分割成複數個元件晶片。在剝離步驟中,使導電性的探針接觸在片材的與元件晶片對應之區域上,並在該探針上施加電壓,解除片材對元件晶片的吸附,而使元件晶片從片材剝離。以下,針對本實施形態之晶圓的加工方法來進行詳細敘述。
圖1是示意地顯示本實施形態所使用之被加工物11的構成例之立體圖。被加工物11例如包含由矽等的材料而構成之圓盤狀的晶圓來作為基板13。該基板13的正面13a側是藉由設定成格子狀之分割預定線(切割道)15劃分成複數個區域,並且在各區域中,設置有IC(Integrated Circuit)等的元件17。
再者,雖然本實施形態的被加工物11是包含由矽等的材料而構成之圓盤狀的晶圓來作為基板13,但該基板13只要至少是由半導體或絕緣體構成即可。亦即,對於基板13的形狀、構造、大小等並無限制。又,對於元件17的種類、數量、形狀、構造、大小、配置等也無限制。
圖2是示意地顯示本實施形態所使用之片材21及框架31的構成例之立體圖。片材21例如是直徑大於被加工物11之圓形的薄膜,並且是由尼龍(nylon)、聚乙烯(polyethylene)、聚氯乙烯(PVC)、矽等的樹脂而形成。惟,該片材21只要至少是由絕緣體構成即可。又,片材21上沒有設置具有黏著力之黏著層。
再者,該片材21較佳的是形成為100μm以下的厚度,而可在後述之吸附步驟中強烈地吸附在被加工物11上。這是因為片材21太厚的話,就會變得難以隔著該片材21來使被加工物11發生極化的緣故。另一方面,對於片材21的形狀、構造、大小等並無限制。
在本實施形態中,使用由具有伸縮性之材料而形成之薄膜來作為片材21。由於該片材21上沒有設置具有黏著力之黏著層,因此可壓低片材21之成本。又,也可藉由重覆使用片材21,來進一步壓低片材21之成本。
片材21的外周部分例如是由不鏽鋼或鋁等的材料而構成,並且以接著劑23來固定環狀的框架31,該框架31具有直徑大於被加工物11之開口31a。惟,對於框架31的材質、形狀、構造、大小等並無限制。例如,也可使用如下類型的框架31,即,由內側的環與外側的環構成,會將片材21的外周部挾持在該等2個環之間來固定的框架31。在該情況下,不需要使用接著劑23。
又,也可使用由樹脂等的絕緣體而構成之框架31。在該情況下,在後述之吸附步驟中使片材21吸附在被加工物11上之時,也可一併使片材21吸附在框架31上來固定。亦即,在該情況下也不需要使用接著劑23。
在本實施形態之元件晶片的製造方法中,首先進行載置步驟,隔著上述之片材21將被加工物11(及框架31)載置於極化形成台上,該極化形成台具有已設置了一對電極之保持面。圖3是顯示關於載置步驟之立體圖。
如圖3所示,本實施形態所使用之極化形成台2例如包含由不銹鋼等的材料而構成之圓盤狀的框體4。在框體4的上表面中央部配置有會構成極化形成台2的保持面之極化形成板6。又,在框體4的周圍設置有用以將片材21的外周部分連同框架31一起固定之複數個夾具8。
極化形成板6例如包含由聚乙烯或聚對苯二甲酸乙二酯等的材料而形成為大致圓形之絕緣性的基材10。該基材10的直徑例如大於被加工物11的直徑。惟,對於基材10的材質、形狀、厚度、大小等並無特別的限制。
在基材10的內部設置有電極層12。該電極層12例如可藉由將相對於作為保持面之基材10的正面呈平行之導電體層分離成第1電極圖案(電極)12a與第2電極圖案(電極)12b而製得。構成電極層12(導電體層)之導電性的材料方面,例如可以舉出氧化銦錫(Indium Tin Oxide:ITO)等的在可見區域中為透明的材料。惟,對於構成電極層12(導電體層)之導電性的材料並無特別的限制。
將導電體層分離成第1電極圖案12a與第2電極圖案12b之方法方面,例如可使用由雷射光束來進行之燒蝕加工。又,也可藉由蝕刻等的方法而將導電體層分離成第1電極圖案12a與第2電極圖案12b。也可藉由網板印刷或噴墨等的方法,而形成已分離成第1電極圖案12a與第2電極圖案12b之狀態的電極層12。
又,在本實施形態中,電極層12是形成為能夠將第1電極圖案12a及第2電極圖案12b雙方配置在保持面上所載置之被加工物11的各元件17的正下方。例如,如圖3所示,只要將第1電極圖案12a及第2電極圖案12b形成為互相嚙合之櫛齒狀,則櫛齒的重覆週期只需要比被加工物11中相鄰之分割預定線15的間隔狹窄即可。
在載置步驟中,首先,使固定於框架31之片材21的中央部分接觸在極化形成台2的保持面(亦即,極化形成板6)。並且一併以夾具8來固定框架31。然後,例如將被加工物11載置於片材21的上表面,以使元件17側(基板13的正面13a側)露出於上方。亦即,被加工物11是隔著由絕緣體構成之片材21而載置於極化形成台2的保持面上。
此時,調整被加工物11對極化形成台2的位置,以使第1電極圖案12a及第2電極圖案12b雙方配置在各元件17的正下方。亦即,將被加工物11載置於片材21上,以將被加工物11的與各元件17對應之區域配置在第1電極圖案12a與第2電極圖案12b共同存在之區域中。
藉此,將可使藉由第1電極圖案12a而形成之電場、與藉由第2電極圖案12b而形成之電場雙方,強烈地作用在片材21的與各元件17對應之區域。然後,其結果是片材21將會強烈地吸附在被加工物11的與各元件17對應之區域。
在載置步驟之後,進行吸附步驟,使片材21藉由靜電力而吸附在被加工物11上。圖4(A)是顯示關於吸附步驟之部分截面側面圖,圖4(B)是將圖4(A)的一部分擴大之截面圖。在本實施形態的吸附步驟中,例如,在第1電極圖案12a上施加負的電壓,並且在第2電極圖案12b上施加正的電壓。
施加在第1電極圖案12a及第2電極圖案12b上之電壓的大小,或施加電壓之時間等,可根據片材21的材質、厚度等而適當地調整。其結果是在片材21上,會發生像是可將第1電極圖案12a的負的電壓及第2電極圖案12b的正的電壓的影響加以消除之極化。
亦即,如圖4(A)及圖4(B)所示,在第1電極圖案12a的上方的區域中,像是片材21的下表面側為正,且片材21的上表面側為負的極化會發生在片材21上。另一方面,在第2電極圖案12b的上方的區域中,像是片材21的下表面側為負,且片材21的上表面側為正的極化會發生在片材21上。
然後,藉此在被加工物11的基板13上,也會發生像是可將來自片材21的影響加以消除之極化。亦即,如圖4(A)及圖4(B)所示,在第1電極圖案12a的上方的區域中,像是基板13的下表面側為正的極化會發生在基板13上。另一方面,在第2電極圖案12b的上方的區域中, 像是基板13的下表面側為負的極化會發生在基板13上。
當發生如上的極化時,基板13及片材21會藉由靜電力而互相吸附。亦即,在第1電極圖案12a的上方的區域中,藉由基板13的下表面側的正電與片材21的上表面側的負電之間的引力,片材21會吸附在被加工物11上。另一方面,在第2電極圖案12b的上方的區域中,藉由基板13的下表面側的負電與片材21的上表面側的正電之間的引力,片材21會吸附在被加工物11上。
再者,在本實施形態中,雖然在第1電極圖案12a上施加負的電壓,並且在第2電極圖案12b上施加正的電壓,但也可以在第1電極圖案12a上施加正的電壓,並且在第2電極圖案12b施加上負的電壓。在此情況下,發生在基板13及片材21之極化的極性將會在上下方向上反轉。
在吸附步驟之後,進行搬出步驟,將吸附有片材21之狀態的被加工物11從極化形成台2搬出。圖5是顯示關於搬出步驟之部分截面側面圖。在搬出步驟中,例如解除夾具8對框架31的固定。又,停止對於第1電極圖案12a及第2電極圖案12b的電壓供給。
藉此,如圖5所示,可將吸附有片材21之狀態的被加工物11從極化形成台2搬出。再者,也可構成為在第1電極圖案12a及第2電極圖案12b上,供給與吸附步驟中所供給之電壓為相反極性的電壓,而可將片材21輕易地從極化形成台2 剝離。
在本實施形態中,片材21是由絕緣體而構成,被加工物11的基板13是由絕緣體或半導體而構成。因此,即使將被加工物11及片材21(框架31)從極化形成台2搬出之後,片材21對被加工物11的吸附也可長期地(例如,數日以上)維持。
在搬出步驟之後,進行分割步驟,將吸附有片材21之狀態的被加工物11進行加工而分割成複數個元件晶片。該分割步驟更包含:改質層形成步驟,將基板13的內部進行改質而形成沿著分割預定線15的改質層;及擴張步驟,擴張片材21且以改質層為起點來使被加工物11斷裂而分割成複數個元件晶片。
圖6是顯示關於分割步驟中的改質層形成步驟之部分截面側面圖。改質層形成步驟例如是使用圖6所示之雷射加工裝置22來進行。該雷射加工裝置22具備隔著片材21將被加工物11加以吸引、保持之工作夾台24。
工作夾台24連結於馬達等的旋轉驅動源(不圖示),並繞著與鉛直方向大致平行的旋轉軸旋轉。又,在工作夾台24的下方設置有移動機構(不圖示),工作夾台24是藉由該移動機構而在水平方向上移動。
工作夾台24的上表面的一部分是成為將吸附有被加工物11之片材21加以吸引、保持的保持面24a。保持面24a是經由形成在工作夾台24的內部之吸引路(不圖示)等而連接到吸引源(不圖示)。藉由使吸引源的負壓在保持面24a上起作用,被加工物11就會隔著片材21保持在工作夾台24上。在工作夾台24的周圍設置有用以固定框架31的複數個夾具26。
在工作夾台24的上方配置有雷射照射單元28。雷射照射單元28會將以雷射振盪器(不圖示)進行了脈衝振盪後的雷射光束L照射、聚光於規定的位置。雷射振盪器是構成為可將對於構成被加工物11之基板13具有穿透性之波長(難以被吸收之波長)的雷射光束L進行脈衝振盪。
在改質層形成步驟中,首先使正吸附被加工物11之片材21(片材21的下表面)接觸在工作夾台24的保持面24a上,並且使吸引源的負壓起作用。並且一併以夾具26來固定框架31。藉此,被加工物11會以元件17(基板13的正面13a)側露出於上方之狀態而保持在工作夾台24上。
接著,使工作夾台24移動、旋轉,將雷射照射單元28的位置對準於例如作為對象之分割預定線15的延長線上方。然後,如圖6所示,一邊從雷射照射單元28朝向基板13的正面13a照射雷射光束L,一邊使工作夾台24在相對於對象之分割預定線15呈平行的方向上移動。
雷射光束L聚光在基板13內部的規定深度之位置上。像這樣,使對於基板13具有穿透性之波長的雷射光束L沿著分割預定線15聚光在基板13的內部,藉此便可沿著分割預定線15將基板13的內部進行改質,從而形成作為分割起點之改質層19。
當沿著對象之分割預定線15形成改質層19之後,使工作夾台24再次移動、旋轉,將雷射照射單元28的位置對準於其他分割預定線15的延長線上方。然後,一邊從雷射照射單元28朝向基板13的正面13a照射雷射光束L,一邊使工作夾台24在相對於該其他分割預定線15呈平行的方向上移動。
重覆如此的順序,沿著所有的分割預定線15形成改質層19時,則結束改質層形成步驟。再者,在本實施形態中,雖然是沿著各個分割預定線15形成單層的改質層19,但也可以沿著各個分割預定線15形成多層(複數層)的改質層19。
在改質層形成步驟之後,進行擴張步驟。圖7(A)及圖7(B)是顯示關於分割步驟中的擴張步驟之部分截面側面圖。擴張步驟例如是使用圖7(A)及圖7(B)所示之擴張裝置32來進行。擴張裝置32具備有將片材21的外周部分連同框架31一起支撐之支撐構造34、及圓筒狀的擴張滾筒36。
支撐構造34包含在平面視角下具有圓形的開口之支撐台38。在該支撐台38的上表面,可載置片材21的外周部分及框架31。在支撐台38的周圍,設置有用以將框架31固定在支撐台38上之複數個夾具40。
支撐台38是藉由用以使支撐構造34升降的升降機構(不圖示)來受到支撐。又,在支撐台38的開口的內側配置有擴張滾筒36。該擴張滾筒36的內徑(直徑)大於被加工物11的直徑。另一方面,擴張滾筒36的外徑(直徑)小於框架31的內徑(直徑)。
在擴張步驟中,如圖7(A)所示,首先將片材21的外周部分及框架31載置於支撐台38的上表面,以使被加工物11的元件17(基板13的正面13a)側露出於上方,並以夾具40來固定。再者,在將片材21的外周部分及框架31載置於支撐台38的上表面之前,會藉由升降機構預先使支撐台38的上表面移動至與擴張滾筒36的上端等高的位置,或是高於擴張滾筒36的上端的位置。
接著,如圖7(B)所示,以升降機構來使支撐構造34降低,從而使支撐台38的上表面移動至比擴張滾筒36的上端更下方之處。其結果是擴張滾筒36會相對於支撐台38而上升,片材21會被擴張滾筒36上推而放射狀地擴張。當片材21被擴張時,將片材21擴張之方向上的力(放射狀的力)會作用在被加工物11(基板13)。藉此,被加工物11會以改質層19為起點而分割成複數個元件晶片41。
如上所述,在本實施形態中,是將被加工物11載置於片材21上,以將被加工物11的與各元件17對應之區域配置在第1電極圖案12a與第2電極圖案12b共同存在之區域中,然後進行吸附步驟。藉此,片材21會強烈地吸附在被加工物11的與各元件17對應之區域(亦即,與各元件晶片41對應之區域)。
因此,擴張片材21而將被加工物11分割成複數個元件晶片41之時,被加工物11(或是各元件晶片41)不會輕易地從片材21剝落。同樣地,在將被加工物11分割成複數個元件晶片41之後,各元件晶片41也不會輕易地從片材21剝落。當被加工物11被分割成與各元件17對應之複數個元件晶片41時,則結束擴張步驟及分割步驟。
在分割步驟之後,進行剝離步驟,解除片材21對元件晶片41的吸附,而將元件晶片41從片材21剝離。圖8是顯示關於剝離步驟之部分截面側面圖。剝離步驟例如是使用圖8所示之拾取裝置52來進行。拾取裝置52具備有將片材21的外周部分連同框架31一起固定之固定構造(固定部)54。
固定構造54例如包含在平面視角下具有圓形的開口之固定台56。在該固定台56的上表面,可載置片材21的外周部分及框架31。在固定台56的周圍,設置有用以將片材21的外周部分及框架31固定在固定台56上之複數個夾具58。
在固定台56的開口的內側中,由導體構成並且具有導電性之探針60是配置在相當於固定台56的上表面之高度的位置上。探針60的上表面形成為大致平坦狀,而可使全體接觸在片材21的與各元件晶片41對應之區域。
該探針60的上表面的面積例如為元件晶片41的下表面(構成元件晶片41之基板13的背面13b)的面積的50%以上,較佳為70%以上。像這樣,藉由將探針60的上表面的面積充分地增大,便可對片材21的與各元件晶片41對應之區域,使藉由探針60所形成之電場適當地起作用。
該探針60是經由第1開關(電壓施加單元)62a而連接至第1直流電源64a的負極。又,探針60是經由第2開關(電壓施加單元)62b而連接至第2直流電源64b的正極。藉由切換第1開關62a及第2開關62b的導通(on)與非導通(off),便可對探針60選擇性地施加正的電壓或是負的電壓。
在探針60的上方,配置有吸附元件晶片41並加以拾取之拾取工具66。該拾取工具66例如是藉由升降機構(不圖示)而可上下移動,並且配合在已接觸於片材21之狀態的探針60上施加電壓之時間點,來拾取元件晶片41。在相鄰於該拾取工具66之位置上,配置有用以拍攝元件晶片41來確認其位置之照相機(拍攝單元)68。
在剝離步驟中,如圖8所示,首先將片材21的外周部分及框架31載置於固定台56的上表面,以使被加工物11的元件17(基板13的正面13a)側露出於上方,並以夾具58來固定。圖9(A)是示意地顯示該狀態(亦即,剛開始剝離步驟之後)的片材21等的狀態之截面圖。
接著,使探針60接觸在與作為剝離(拾取)對象之元件晶片41對應之片材21的下表面側的區域,且在該探針60上施加正負電壓的其中一者。在本實施形態中,是將第1開關62a設成導通,且將第2開關62b設成非導通,藉此在探針60上施加負的電壓。藉此,片材21的極化狀態會在與探針60對應之全體區域中變化成一致。
圖9(B)是示意地顯示剝離步驟中在探針60上施加負的電壓後的片材21等的狀態之部分截面側面圖。如圖9(B)所示,在本實施形態中,由於在探針60上施加負的電壓,因此極化會變化成片材21的下表面側為正,且片材21的上表面側為負。
當片材21的極化狀態變化時,元件晶片41的極化狀態也會配合而跟著變化。亦即,元件晶片41的極化狀態也會在與探針60對應之全體區域中變化成一致。如圖9(B)所示,在本實施形態中,極化狀態會變化成基板13的下表面側為正。
在片材21及元件晶片41的極化狀態穩定之後,在探針60上施加正負電壓的另一者。在本實施形態中,是將第1開關62a設成非導通,且將第2開關62b設成導通,藉此在探針60上施加正的電壓。藉此,片材21之極化的極性將會在上下方向上反轉。
圖9(C)是示意地顯示在探針60上施加正的電壓後的片材等的狀態之部分截面側面圖。如圖9(C)所示,在本實施形態中,由於在探針60上施加正的電壓,因此極化狀態會變化成片材21的下表面側為負,且片材21的上表面側為正。
其結果是片材21對元件晶片41的吸附會在元件晶片41的極化狀態隨著片材21的極化狀態的變化而變化之時被解除。因此,配合該片材21的極化狀態的變化(上下的極性的反轉),以拾取工具66來拾取元件晶片41,藉此便可將元件晶片41輕易地從片材21剝離。
圖10是顯示關於剝離步驟中施加在探針60上之電壓之圖表。例如,施加在探針60上之電壓V1,V2分別為-3kV,+3kV,且在探針60上施加電壓V1之時間t1為3秒,在探針60施加電壓V2之時間(t2-t1)為1秒。惟,對於電壓V1,V2、時間t1、時間(t2-t1)的值並無特別的限制。
如上所述,在本實施形態之元件晶片的製造方法中,是隔著由絕緣體構成之片材21將被加工物11載置於極化形成台2上,極化形成台2具有將第1電極圖案(電極)12a與第2電極圖案(電極)12b(一對電極)隔著間隔設置於面方向上之保持面,之後,在極化形成台2的第1電極圖案12a與第2電極圖案12b上施加電壓,而使片材21與被加工物11分別發生極化,以使片材21藉由靜電力而吸附在被加工物11上,因此不需要使用以往的黏著膠帶就可將被加工物11進行加工。
又,在本實施形態之元件晶片的製造方法中,是將被加工物11的與各元件17對應之區域配置在極化形成台2的保持面的第1電極圖案12a與第2電極圖案12b共同存在之區域中,因此當在極化形成台2的第1電極圖案12a與第2電極圖案12b上施加電壓時,片材21會強烈地吸附在被加工物11的與各元件對應之區域。因此,將被加工物11分割成複數個元件晶片41之時,或是將被加工物11分割成複數個元件晶片41之後,各元件晶片41不會輕易地從片材21剝落。
再者,在本實施形態之元件晶片的製造方法中,是在將元件晶片41從片材21剝離之時,使導電性的探針60接觸在片材21的與元件晶片41對應之區域上,並且在該探針60上施加電壓,因此可根據必要性來解除片材21對元件晶片41的吸附,而可將元件晶片41輕易地從片材21剝離。
再者,本發明並不因上述實施形態等之記載而受到限制,可作各種變更而實施。上述實施形態之構造、方法等,只要在不脫離本發明的目的之範圍下,均可適當變更而實施。
10‧‧‧基材11‧‧‧被加工物12‧‧‧電極層12a‧‧‧第1電極圖案(電極)12b‧‧‧第2電極圖案(電極)13‧‧‧基板13a‧‧‧正面13b‧‧‧背面15‧‧‧分割預定線(切割道)17‧‧‧元件19‧‧‧改質層2‧‧‧極化形成台21‧‧‧片材22‧‧‧雷射加工裝置23‧‧‧接著劑24‧‧‧工作夾台24a‧‧‧保持面26‧‧‧夾具28‧‧‧雷射照射單元31‧‧‧框架31a‧‧‧開口32‧‧‧擴張裝置34‧‧‧支撐構造36‧‧‧擴張滾筒38‧‧‧支撐台4‧‧‧框體40‧‧‧夾具41‧‧‧元件晶片52‧‧‧拾取裝置54‧‧‧固定構造(固定部)56‧‧‧固定台58‧‧‧夾具6‧‧‧極化形成板60‧‧‧探針62a‧‧‧第1開關(電壓施加單元)62b‧‧‧第2開關(電壓施加單元)64a‧‧‧第1直流電源64b‧‧‧第2直流電源66‧‧‧拾取工具68‧‧‧照相機(拍攝單元)8‧‧‧夾具L‧‧‧雷射光束
圖1是示意地顯示被加工物的構成例之立體圖。 圖2是示意地顯示片材及框架的構成例之立體圖。 圖3是顯示關於載置步驟之立體圖。 圖4(A)是顯示關於吸附步驟之部分截面側面圖,圖4(B)是將圖4(A)的一部分擴大之截面圖。 圖5是顯示關於搬出步驟之部分截面側面圖。 圖6是顯示關於分割步驟中的改質層形成步驟之部分截面側面圖。 圖7(A)及圖7(B)是顯示關於分割步驟中的擴張步驟之部分截面側面圖。 圖8是顯示關於剝離步驟之部分截面側面圖。 圖9(A)是示意地顯示剛開始剝離步驟之後的片材等的狀態之截面圖,圖9(B)是示意地顯示剝離步驟中在探針上施加負的電壓後的片材等的狀態之部分截面側面圖,圖9(C)是示意地顯示在探針上施加正的電壓後的片材等的狀態之部分截面側面圖。 圖10是顯示關於剝離步驟中施加在探針上之電壓之圖表。
13‧‧‧基板
13a‧‧‧正面
13b‧‧‧背面
17‧‧‧元件
21‧‧‧片材
41‧‧‧元件晶片
60‧‧‧探針
66‧‧‧拾取工具
Claims (4)
- 一種元件晶片的製造方法,是分割被加工物來製造複數個元件晶片之元件晶片的製造方法,前述被加工物包含:基板,由絕緣體或半導體構成,並具有藉由格子狀的分割預定線劃分成複數個區域之正面;及複數個元件,分別設置於該基板的該複數個區域中,前述元件晶片的製造方法之特徵在於:包含: 載置步驟,隔著由絕緣體構成之片材將該被加工物載置於工作台上,前述工作台具有將一對電極隔著間隔設置於面方向上之保持面; 吸附步驟,在實施該載置步驟之後,在該工作台的該一對電極上施加電壓,而使該片材與該被加工物分別發生極化,並使該片材藉由靜電力而吸附在該被加工物上; 搬出步驟,在實施該吸附步驟之後,將吸附有該片材之狀態的該被加工物從該工作台搬出; 分割步驟,在實施該搬出步驟之後,將吸附有該片材之狀態的該被加工物進行加工,而將該被加工物分割成與該元件對應之複數個元件晶片;及 剝離步驟,在實施該分割步驟之後,使導電性的探針接觸在該片材的與該元件晶片對應之區域上,並在該探針上施加電壓,解除該片材對該元件晶片的吸附,而將該元件晶片從該片材剝離, 在該載置步驟中,將該被加工物的與各元件對應之區域配置在該保持面的該一對電極共同存在之區域。
- 如請求項1之元件晶片的製造方法,其中在該剝離步驟中,在該探針上施加正負電壓的其中一者,使該片材與該元件晶片的極化狀態變化之後,在該探針上施加正負電壓的另一者,使該片材的極化狀態反轉,藉此解除該片材對該元件晶片的吸附。
- 如請求項1或2之元件晶片的製造方法,其中該分割步驟更包含:改質層形成步驟,照射對該基板具有穿透性之波長的雷射光束,在該基板的內部形成沿著該分割預定線的改質層;及擴張步驟,在該改質層形成步驟之後,擴張該片材且以該改質層為起點來使該被加工物斷裂而分割成複數個該元件晶片。
- 一種拾取裝置,是將藉由靜電力而吸附有由絕緣體構成之片材的元件晶片從該片材進行拾取之拾取裝置,其特徵在於:包含: 固定部,固定該片材; 探針,具有導電性並且接觸在該片材的與該元件晶片對應之區域; 電壓施加單元,對該探針施加電壓;及 拾取工具,配合在已接觸於該片材之狀態的該探針上施加電壓之時間點,來拾取該元件晶片。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003179128A (ja) * | 2001-12-11 | 2003-06-27 | Ngk Spark Plug Co Ltd | 静電チャック |
JP2004111533A (ja) * | 2002-09-17 | 2004-04-08 | Tokyo Electron Ltd | 静電吸着装置 |
US20040065881A1 (en) * | 2000-08-31 | 2004-04-08 | Yasutaka Ito | Ceramic substrate for semiconductor production and inspection |
JP2007022876A (ja) * | 2005-07-20 | 2007-02-01 | Seiko Epson Corp | 基板分割方法および基板分割装置 |
JP2009253019A (ja) * | 2008-04-07 | 2009-10-29 | Denso Corp | 半導体チップのピックアップ装置及び半導体チップのピックアップ方法 |
TW201640609A (zh) * | 2015-02-07 | 2016-11-16 | 創意科技股份有限公司 | 被加工物保持裝置及雷射切割加工方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01112745A (ja) * | 1987-10-27 | 1989-05-01 | Fujitsu Ltd | 半導体製造装置におけるウエハ離脱方法 |
JPH0927543A (ja) | 1995-07-10 | 1997-01-28 | Disco Abrasive Syst Ltd | ウェーハカセット |
EP1305821B1 (de) * | 2000-08-02 | 2008-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mobiler halter für einen wafer |
KR100890790B1 (ko) * | 2001-08-27 | 2009-03-31 | 파나소닉 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
DE102006003591A1 (de) * | 2005-01-26 | 2006-08-17 | Disco Corporation | Laserstrahlbearbeitungsmaschine |
JP2007035912A (ja) * | 2005-07-27 | 2007-02-08 | Seiko Epson Corp | 基板分割方法および基板分割装置 |
JP2009117441A (ja) * | 2007-11-02 | 2009-05-28 | Creative Technology:Kk | ワーク保持装置 |
JP2012084720A (ja) | 2010-10-13 | 2012-04-26 | Disco Abrasive Syst Ltd | ワークの加工方法 |
JP5770677B2 (ja) * | 2012-05-08 | 2015-08-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP6113019B2 (ja) * | 2013-08-07 | 2017-04-12 | 株式会社ディスコ | ウエーハの分割方法 |
JP6208521B2 (ja) * | 2013-10-07 | 2017-10-04 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016001677A (ja) * | 2014-06-12 | 2016-01-07 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016051876A (ja) * | 2014-09-02 | 2016-04-11 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP6175470B2 (ja) * | 2015-10-22 | 2017-08-02 | 株式会社東京精密 | レーザダイシング装置及び方法 |
-
2017
- 2017-12-12 JP JP2017237382A patent/JP6957109B2/ja active Active
-
2018
- 2018-12-04 CN CN201811472547.6A patent/CN110034065B/zh active Active
- 2018-12-05 US US16/210,139 patent/US10847403B2/en active Active
- 2018-12-06 TW TW107143919A patent/TWI771538B/zh active
- 2018-12-12 KR KR1020180159928A patent/KR102549278B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040065881A1 (en) * | 2000-08-31 | 2004-04-08 | Yasutaka Ito | Ceramic substrate for semiconductor production and inspection |
JP2003179128A (ja) * | 2001-12-11 | 2003-06-27 | Ngk Spark Plug Co Ltd | 静電チャック |
JP2004111533A (ja) * | 2002-09-17 | 2004-04-08 | Tokyo Electron Ltd | 静電吸着装置 |
JP2007022876A (ja) * | 2005-07-20 | 2007-02-01 | Seiko Epson Corp | 基板分割方法および基板分割装置 |
JP2009253019A (ja) * | 2008-04-07 | 2009-10-29 | Denso Corp | 半導体チップのピックアップ装置及び半導体チップのピックアップ方法 |
TW201640609A (zh) * | 2015-02-07 | 2016-11-16 | 創意科技股份有限公司 | 被加工物保持裝置及雷射切割加工方法 |
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