TWI744978B - 發光裝置的蓋件及蓋件的製造方法 - Google Patents

發光裝置的蓋件及蓋件的製造方法 Download PDF

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Publication number: TWI744978B
Authority: TW; Taiwan
Prior art keywords: film; cover; layer; titanium; metal layer
Prior art date: 2019-07-25

Application number

TW109123135A

Other languages

English (en)

Chinese (zh)

Other versions

TW202115931A (zh

Inventor

村上達也

辻原利治

Original Assignee

日商大真空股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2019-07-25

Filing date

2020-07-09

Publication date

2021-11-01

2020-07-09 Application filed by 日商大真空股份有限公司 filed Critical 日商大真空股份有限公司

2021-04-16 Publication of TW202115931A publication Critical patent/TW202115931A/zh

2021-11-01 Application granted granted Critical

2021-11-01 Publication of TWI744978B publication Critical patent/TWI744978B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 36
239000013078 crystal Substances 0.000 claims abstract description 86
239000010936 titanium Substances 0.000 claims abstract description 76
229910052719 titanium Inorganic materials 0.000 claims abstract description 74
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 73
239000010931 gold Substances 0.000 claims abstract description 70
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 65
229910052737 gold Inorganic materials 0.000 claims abstract description 65
238000007789 sealing Methods 0.000 claims abstract description 26
238000000034 method Methods 0.000 claims description 32
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
229910000990 Ni alloy Inorganic materials 0.000 claims description 7
230000002093 peripheral effect Effects 0.000 claims description 7
230000001590 oxidative effect Effects 0.000 claims description 3
150000003608 titanium Chemical class 0.000 claims 1
239000010408 film Substances 0.000 abstract description 280
239000010410 layer Substances 0.000 abstract description 123
229910052751 metal Inorganic materials 0.000 abstract description 83
239000002184 metal Substances 0.000 abstract description 83
239000011104 metalized film Substances 0.000 abstract description 46
239000000919 ceramic Substances 0.000 abstract description 34
HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 abstract description 25
229910001000 nickel titanium Inorganic materials 0.000 abstract description 25
238000001465 metallisation Methods 0.000 abstract description 14
239000002356 single layer Substances 0.000 abstract description 3
238000011156 evaluation Methods 0.000 description 44
238000002845 discoloration Methods 0.000 description 21
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
238000005336 cracking Methods 0.000 description 14
238000005304 joining Methods 0.000 description 10
230000015572 biosynthetic process Effects 0.000 description 9
238000004806 packaging method and process Methods 0.000 description 9
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
229910045601 alloy Inorganic materials 0.000 description 8
239000000956 alloy Substances 0.000 description 8
230000005496 eutectics Effects 0.000 description 8
JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 8
239000000463 material Substances 0.000 description 8
230000035939 shock Effects 0.000 description 8
238000005452 bending Methods 0.000 description 7
239000011135 tin Substances 0.000 description 6
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
239000011651 chromium Substances 0.000 description 5
229910052718 tin Inorganic materials 0.000 description 5
229910001128 Sn alloy Inorganic materials 0.000 description 4
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
230000000694 effects Effects 0.000 description 4
238000005240 physical vapour deposition Methods 0.000 description 4
229910015363 Au—Sn Inorganic materials 0.000 description 3
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
229910052804 chromium Inorganic materials 0.000 description 3
238000005538 encapsulation Methods 0.000 description 3
238000002474 experimental method Methods 0.000 description 3
239000001307 helium Substances 0.000 description 3
229910052734 helium Inorganic materials 0.000 description 3
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
229910052759 nickel Inorganic materials 0.000 description 3
239000001301 oxygen Substances 0.000 description 3
229910052760 oxygen Inorganic materials 0.000 description 3
238000009792 diffusion process Methods 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
239000012528 membrane Substances 0.000 description 2
238000005476 soldering Methods 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
238000004659 sterilization and disinfection Methods 0.000 description 2
MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
238000001816 cooling Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
229910001882 dioxygen Inorganic materials 0.000 description 1
239000007789 gas Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
230000001954 sterilising effect Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1
238000010301 surface-oxidation reaction Methods 0.000 description 1
238000003466 welding Methods 0.000 description 1
238000004804 winding Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages

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Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Materials Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Inorganic Chemistry (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Device Packages (AREA)
Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

TW109123135A 2019-07-25 2020-07-09 發光裝置的蓋件及蓋件的製造方法 TWI744978B (zh)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP2019-136739		2019-07-25
JP2019136739		2019-07-25
JP2019214000		2019-11-27
JP2019-214000		2019-11-27

Publications (2)

Publication Number	Publication Date
TW202115931A TW202115931A (zh)	2021-04-16
TWI744978B true TWI744978B (zh)	2021-11-01

Family

ID=74193833

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW109123135A TWI744978B (zh)	2019-07-25	2020-07-09	發光裝置的蓋件及蓋件的製造方法

Country Status (4)

Country	Link
JP (1)	JP7136358B2 (ja)
CN (1)	CN113812008A (ja)
TW (1)	TWI744978B (ja)
WO (1)	WO2021014925A1 (ja)

Citations (5)

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JP2011040577A (ja) *	2009-08-11	2011-02-24	Citizen Electronics Co Ltd	発光装置の製造方法
JP2015018873A (ja) *	2013-07-09	2015-01-29	日機装株式会社	半導体モジュール
TW201813122A (zh) *	2016-09-01	2018-04-01	日商日機裝股份有限公司	光半導體裝置及光半導體裝置的製造方法
JP2018098137A (ja) *	2016-12-16	2018-06-21	株式会社ジャパンディスプレイ	有機ｅｌ表示装置
TW201826572A (zh) *	2016-09-01	2018-07-16	日商日機裝股份有限公司	光半導體裝置及光半導體裝置的製造方法

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JP2002353352A (ja) *	2001-05-30	2002-12-06	Kyocera Corp	撮像素子収納用パッケージ
JP2004031101A (ja) *	2002-06-25	2004-01-29	Tdk Corp	発光素子及び発光パネル
JP2004059375A (ja) *	2002-07-29	2004-02-26	Kyocera Corp	セラミックス−金属部材接合体
JP2007123465A (ja) *	2005-10-27	2007-05-17	Kyocera Corp	電子部品収納用パッケージおよび電子装置およびその製造方法
JP2017073489A (ja) *	2015-10-08	2017-04-13	エヌイーシーショットコンポーネンツ株式会社	メタル−ガラスリッドおよびそれを利用したｄｕｖ−ｌｅｄ装置
JP6339652B1 (ja)	2016-12-07	2018-06-06	日機装株式会社	光半導体装置の製造方法
KR102563840B1 (ko) *	2017-06-22	2023-08-07	에이지씨 가부시키가이샤	창재, 광학 패키지
CN207441737U (zh) *	2017-11-10	2018-06-01	深圳大道半导体有限公司	半导体发光器件

2020
- 2020-07-02 WO PCT/JP2020/026073 patent/WO2021014925A1/ja active Application Filing
- 2020-07-02 CN CN202080023523.1A patent/CN113812008A/zh active Pending
- 2020-07-02 JP JP2021533904A patent/JP7136358B2/ja active Active
- 2020-07-09 TW TW109123135A patent/TWI744978B/zh active

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2011040577A (ja) *	2009-08-11	2011-02-24	Citizen Electronics Co Ltd	発光装置の製造方法
JP2015018873A (ja) *	2013-07-09	2015-01-29	日機装株式会社	半導体モジュール
TW201813122A (zh) *	2016-09-01	2018-04-01	日商日機裝股份有限公司	光半導體裝置及光半導體裝置的製造方法
TW201826572A (zh) *	2016-09-01	2018-07-16	日商日機裝股份有限公司	光半導體裝置及光半導體裝置的製造方法
JP2018098137A (ja) *	2016-12-16	2018-06-21	株式会社ジャパンディスプレイ	有機ｅｌ表示装置

Also Published As

Publication number	Publication date
WO2021014925A1 (ja)	2021-01-28
JP7136358B2 (ja)	2022-09-13
JPWO2021014925A1 (ja)	2021-01-28
CN113812008A (zh)	2021-12-17
TW202115931A (zh)	2021-04-16

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JPH0574941B2 (ja)	1993-10-19
JP2750469B2 (ja)	1998-05-13	半導体パッケージ
JPS617645A (ja)	1986-01-14	半導体装置用金属材料