TWI739999B - 發光二極體晶片的製造方法 - Google Patents

發光二極體晶片的製造方法 Download PDF

Info

Publication number: TWI739999B
Authority: TW; Taiwan
Prior art keywords: transparent substrate; wafer; light; transparent; emitting diode
Prior art date: 2017-03-06

Application number

TW107104137A

Other languages

English (en)

Chinese (zh)

Other versions

TW201837999A (zh

Inventor

岡村卓

北村宏

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-06

Filing date

2018-02-06

Publication date

2021-09-21

2018-02-06 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2018-10-16 Publication of TW201837999A publication Critical patent/TW201837999A/zh

2021-09-21 Application granted granted Critical

2021-09-21 Publication of TWI739999B publication Critical patent/TWI739999B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 13
239000000758 substrate Substances 0.000 claims abstract description 122
238000000034 method Methods 0.000 claims abstract description 11
239000004065 semiconductor Substances 0.000 claims abstract description 8
239000013078 crystal Substances 0.000 claims abstract description 7
238000002360 preparation method Methods 0.000 claims abstract description 4
235000012431 wafers Nutrition 0.000 claims description 89
229910052594 sapphire Inorganic materials 0.000 claims description 12
239000010980 sapphire Substances 0.000 claims description 12
239000000853 adhesive Substances 0.000 claims description 5
230000001070 adhesive effect Effects 0.000 claims description 5
239000005304 optical glass Substances 0.000 claims description 5
239000011347 resin Substances 0.000 claims description 5
229920005989 resin Polymers 0.000 claims description 5
239000000919 ceramic Substances 0.000 claims description 4
238000005530 etching Methods 0.000 claims description 2
238000005488 sandblasting Methods 0.000 claims description 2
238000005520 cutting process Methods 0.000 description 20
230000003287 optical effect Effects 0.000 description 8
230000010354 integration Effects 0.000 description 6
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
238000001816 cooling Methods 0.000 description 3
229910002601 GaN Inorganic materials 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
238000002679 ablation Methods 0.000 description 2
239000006061 abrasive grain Substances 0.000 description 1
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
239000002173 cutting fluid Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
238000010030 laminating Methods 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
238000007747 plating Methods 0.000 description 1
229920000515 polycarbonate Polymers 0.000 description 1
239000004417 polycarbonate Substances 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Led Devices (AREA)
Dicing (AREA)
Led Device Packages (AREA)
Laser Beam Processing (AREA)

TW107104137A 2017-03-06 2018-02-06 發光二極體晶片的製造方法 TWI739999B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017-041312		2017-03-06
JP2017041312A JP2018148013A (ja)	2017-03-06	2017-03-06	発光ダイオードチップの製造方法及び発光ダイオードチップ

Publications (2)

Publication Number	Publication Date
TW201837999A TW201837999A (zh)	2018-10-16
TWI739999B true TWI739999B (zh)	2021-09-21

Family

ID=63485633

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW107104137A TWI739999B (zh)	2017-03-06	2018-02-06	發光二極體晶片的製造方法

Country Status (4)

Country	Link
JP (1)	JP2018148013A (ja)
KR (1)	KR102311576B1 (ja)
CN (1)	CN108538992A (ja)
TW (1)	TWI739999B (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2013114480A1 (ja) *	2012-02-01	2013-08-08	パナソニック株式会社	半導体発光素子、その製造方法及び光源装置
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法
JP2015141937A (ja) *	2014-01-27	2015-08-03	株式会社ディスコ	光デバイス及び光デバイスの加工方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4122739B2 (ja) *	2001-07-26	2008-07-23	松下電工株式会社	発光素子及びその製造方法
KR100959079B1 (ko) *	2005-06-27	2010-05-20	한빔 주식회사	열방출이 개선된 전면발광형 발광다이오드 소자 및 이의 제조방법
JP5495876B2 (ja) *	2010-03-23	2014-05-21	株式会社ディスコ	光デバイスウエーハの加工方法
JP5941306B2 (ja) *	2012-03-19	2016-06-29	スタンレー電気株式会社	発光装置およびその製造方法
JP2014175354A (ja)	2013-03-06	2014-09-22	Disco Abrasive Syst Ltd	発光ダイオード
JP2014175362A (ja) *	2013-03-06	2014-09-22	Toshiba Corp	半導体発光素子及びその製造方法
CN108198918B (zh) *	2013-05-15	2020-10-02	皇家飞利浦有限公司	具有衬底中的散射特征的led
KR20150047844A (ko) *	2013-10-25	2015-05-06	주식회사 세미콘라이트	반도체 발광다이오드
JP6255235B2 (ja) *	2013-12-20	2017-12-27	株式会社ディスコ	発光チップ
US20150353417A1 (en) *	2013-12-26	2015-12-10	Shin-Etsu Quartz Products Co., Ltd.	Quartz glass member for wavelength conversion and method of manufacturing the same

2017
- 2017-03-06 JP JP2017041312A patent/JP2018148013A/ja active Pending
2018
- 2018-02-06 TW TW107104137A patent/TWI739999B/zh active
- 2018-02-27 KR KR1020180023623A patent/KR102311576B1/ko active IP Right Grant
- 2018-02-28 CN CN201810165543.7A patent/CN108538992A/zh active Pending

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2013114480A1 (ja) *	2012-02-01	2013-08-08	パナソニック株式会社	半導体発光素子、その製造方法及び光源装置
JP2014239123A (ja) *	2013-06-06	2014-12-18	株式会社ディスコ	加工方法
JP2015141937A (ja) *	2014-01-27	2015-08-03	株式会社ディスコ	光デバイス及び光デバイスの加工方法

Also Published As

Publication number	Publication date
CN108538992A (zh)	2018-09-14
KR102311576B1 (ko)	2021-10-08
TW201837999A (zh)	2018-10-16
KR20180102007A (ko)	2018-09-14
JP2018148013A (ja)	2018-09-20

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