KR102311576B1 - 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 - Google Patents

발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 Download PDF

Info

Publication number
KR102311576B1
KR102311576B1 KR1020180023623A KR20180023623A KR102311576B1 KR 102311576 B1 KR102311576 B1 KR 102311576B1 KR 1020180023623 A KR1020180023623 A KR 1020180023623A KR 20180023623 A KR20180023623 A KR 20180023623A KR 102311576 B1 KR102311576 B1 KR 102311576B1
Authority
KR
South Korea
Prior art keywords
transparent substrate
transparent
light emitting
wafer
emitting diode
Prior art date
Application number
KR1020180023623A
Other languages
English (en)
Korean (ko)
Other versions
KR20180102007A (ko
Inventor
다카시 오카무라
히로시 기타무라
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20180102007A publication Critical patent/KR20180102007A/ko
Application granted granted Critical
Publication of KR102311576B1 publication Critical patent/KR102311576B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)
  • Laser Beam Processing (AREA)
KR1020180023623A 2017-03-06 2018-02-27 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩 KR102311576B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017041312A JP2018148013A (ja) 2017-03-06 2017-03-06 発光ダイオードチップの製造方法及び発光ダイオードチップ
JPJP-P-2017-041312 2017-03-06

Publications (2)

Publication Number Publication Date
KR20180102007A KR20180102007A (ko) 2018-09-14
KR102311576B1 true KR102311576B1 (ko) 2021-10-08

Family

ID=63485633

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180023623A KR102311576B1 (ko) 2017-03-06 2018-02-27 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩

Country Status (4)

Country Link
JP (1) JP2018148013A (ja)
KR (1) KR102311576B1 (ja)
CN (1) CN108538992A (ja)
TW (1) TWI739999B (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197279A (ja) * 2012-03-19 2013-09-30 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
JP2015141937A (ja) 2014-01-27 2015-08-03 株式会社ディスコ 光デバイス及び光デバイスの加工方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4122739B2 (ja) * 2001-07-26 2008-07-23 松下電工株式会社 発光素子及びその製造方法
KR100959079B1 (ko) * 2005-06-27 2010-05-20 한빔 주식회사 열방출이 개선된 전면발광형 발광다이오드 소자 및 이의 제조방법
JP5495876B2 (ja) * 2010-03-23 2014-05-21 株式会社ディスコ 光デバイスウエーハの加工方法
CN104160520A (zh) * 2012-02-01 2014-11-19 松下电器产业株式会社 半导体发光元件、其制造方法和光源装置
JP2014175354A (ja) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
JP2014175362A (ja) * 2013-03-06 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
CN108198918B (zh) * 2013-05-15 2020-10-02 皇家飞利浦有限公司 具有衬底中的散射特征的led
KR20150047844A (ko) * 2013-10-25 2015-05-06 주식회사 세미콘라이트 반도체 발광다이오드
JP6255235B2 (ja) * 2013-12-20 2017-12-27 株式会社ディスコ 発光チップ
US20150353417A1 (en) * 2013-12-26 2015-12-10 Shin-Etsu Quartz Products Co., Ltd. Quartz glass member for wavelength conversion and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197279A (ja) * 2012-03-19 2013-09-30 Stanley Electric Co Ltd 発光装置およびその製造方法
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法
JP2015141937A (ja) 2014-01-27 2015-08-03 株式会社ディスコ 光デバイス及び光デバイスの加工方法

Also Published As

Publication number Publication date
TWI739999B (zh) 2021-09-21
CN108538992A (zh) 2018-09-14
TW201837999A (zh) 2018-10-16
KR20180102007A (ko) 2018-09-14
JP2018148013A (ja) 2018-09-20

Similar Documents

Publication Publication Date Title
KR102204764B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102194112B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102304244B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102311576B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102314054B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102311574B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102296118B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102270094B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102327105B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102228498B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102270092B1 (ko) 발광 다이오드 칩의 제조 방법
KR20180006848A (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
KR102315305B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP2018181875A (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ
KR102212255B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP2018181998A (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ
KR102304248B1 (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP6786166B2 (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ
KR20180027340A (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP2018181876A (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ
KR20170141600A (ko) 발광 다이오드 칩의 제조 방법 및 발광 다이오드 칩
JP2018148093A (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018186165A (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018129371A (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2018186169A (ja) 発光ダイオードチップの製造方法及び発光ダイオードチップ

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant