TWI723087B - SiC晶圓的生成方法 - Google Patents
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Abstract
本發明的課題為提供一種可有效率地從SiC晶錠生成SiC晶圓的SiC晶圓的生成方法。解決手段是一種SiC晶圓的生成方法,其具備:分離起點形成步驟,將對於SiC晶錠具有穿透性之波長的雷射光束的聚光點定位在相當於從SiC晶錠的端面生成的晶圓的厚度之深度上,並且相對地移動該聚光點與該SiC晶錠來對該端面照射雷射光束,以形成平行於該端面的改質層以及從該改質層伸長的裂隙而形成分離起點;及晶圓剝離步驟,實施該分離起點形成步驟後,從該分離起點將相當於晶圓的厚度的板狀物從該SiC晶錠剝離,以生成SiC晶圓。在該分離起點形成步驟中,將形成聚光點的聚光透鏡之數值孔徑設定為0.45~0.9,並且將雷射光束的M2因數實質地設定為5~50,而將聚光點的直徑設定為φ 15~150μm。
Description
本發明是有關於將SiC晶錠切片成晶圓狀之SiC晶圓的生成方法。
IC、LSI等之各種元件,是形成在以矽等為素材之晶圓的表面積層機能層並在此機能層藉由複數條分割預定線所區劃出的區域中。並且,藉由切削裝置、雷射加工裝置等之加工裝置對晶圓之分割預定線施行加工,而將晶圓分割為一個個的元件晶片,且所分割之元件晶片被廣泛地利用於行動電話、個人電腦等之各種電子機器中。
又,功率元件或LED、LD等之光元件,是在以SiC、GaN等之SiC為素材之晶圓的表面積層機能層,並於所積層之機能層上藉由形成為格子狀之複數條分割預定線區劃而形成。
形成有元件之晶圓,一般是將晶錠以線鋸切片而生成,並且將已切片之晶圓的表面、背面研磨並加工成鏡面(參照例如日本專利特開2000-94221號公報)。
該線鋸是將直徑約100~300μm之鋼琴線等的一
根鋼絲捲繞於通常為二~四支的間隔輔助輥上所設置之多數條溝上,並以固定的間距配置為互相平行且使鋼絲朝固定方向或雙向行進,以將晶錠切片為複數片晶圓。
然而,以線鋸切斷晶錠,並研磨表面、背面而生成晶圓時,70~80%的晶錠會被丟棄,而有不符經濟效益的問題。特別是SiC、GaN等之六方晶體單晶晶錠的莫氏硬度高,難以用線鋸切斷,花費許多時間而生產性差,而具有有效率地生成晶圓之課題。
為了解決這些問題,在日本專利特開2013-49161號公報中已記載有一種技術,是將對SiC具有穿透性之波長的雷射光束的聚光點定位在SiC晶錠的內部並進行照射,以在切斷預定面形成改質層及裂隙,再賦予外力而將晶圓沿著形成有改質層及裂隙的切斷預定面割斷,而將晶圓由SiC晶錠分離。
在此公開公報所記載之技術中,是以使脈衝雷射光束之第一照射點和距離該第一照射點最近的第二照射點成為預定位置的方式,來將脈衝雷射光束之聚光點沿著切斷預定面呈螺旋狀地照射,或直線狀地照射,以在SiC晶錠之切斷預定面形成密度非常高之改質層及裂隙。
專利文獻1:日本專利特開2000-94221號公報
專利文獻2:日本專利特開2013-49161號公報
不過,為了在晶圓的內部形成良好的改質層,將聚光透鏡的數值孔徑NA設大為0.45~0.9,且將焦點深度設定成5μm以下較為理想,其結果是,聚光點的直徑成為小至φ 1.5μm~3μm,必須將相鄰的聚光點之間隔設為10μm左右,以在晶錠內部緊密地形成改質層,而有花費時間且生產性很差的問題。
另一方面,當將聚光透鏡的數值孔徑NA設得較小而將聚光點的直徑設得較大時,會使焦點深度變長,並使改質層朝上下振動,而有要將改質層形成在同一面會變得困難的問題。
本發明是有鑒於此點而作成的發明,其目的在於提供一種可有效率地由SiC晶錠生成SiC晶圓之SiC晶圓的生成方法。
依據第1項記載的發明,是提供一種SiC晶圓的生成方法,該SiC晶圓的生成方法的特徵在於具備:分離起點形成步驟,將對於SiC晶錠具有穿透性之波長的雷射光束的聚光點定位在相當於從SiC晶錠的端面生成的晶圓的厚度之深度上,並且相對地移動該聚光點與該SiC晶錠來對該端面照射雷射光束,以形成平行於該端面的改質層以及從該改質層伸長的裂隙而形成分離起點;及晶圓剝離步驟,實施該分離起點形成步驟後,從該分
離起點將相當於晶圓的厚度的板狀物從該SiC晶錠剝離,以生成SiC晶圓,在該分離起點形成步驟中,將形成聚光點的聚光透鏡之數值孔徑設定為0.45~0.9,並且將雷射光束的M2因數(factor)實質地設定為5~50,而將聚光點的直徑設定為φ 15~150μm。
較理想的是,將聚光點的功率密度設定為(2~3)×105W/cm2。
依據第3項記載的發明,是提供一種SiC晶圓的生成方法,其是由具有第一面及與該第一面為相反側的第二面、從該第一面到該第二面的c軸、以及與該c軸正交的c面之SiC晶錠中生成SiC晶圓,該SiC晶圓的生成方法之特徵在於具備:分離起點形成步驟,將對於SiC晶錠具有穿透性之波長的雷射光束的聚光點定位在相當於從該第一面生成的晶圓的厚度之深度上,並且相對地移動該聚光點與該SiC晶錠來對該第一面照射該雷射光束,以形成平行於該第一面的改質層以及從該改質層伸長的裂隙而形成分離起點;及晶圓剝離步驟,實施該分離起點形成步驟後,從該分離起點將相當於晶圓的厚度的板狀物從該SiC晶錠剝離,以生成SiC晶圓;該分離起點形成步驟包含:改質層形成步驟,該c軸相對於該第一面的垂直線傾斜偏角角度,並在與該第一面及該c面之間形成偏角的方向正
交的方向上相對地移動雷射光束之聚光點,以形成直線狀的改質層;及分度步驟,在形成有該偏角的方向上將該聚光點相對地移動而分度移動預定量,在該分離起點形成步驟中,將形成聚光點的聚光透鏡之數值孔徑設定為0.45~0.9,並且將雷射光束的M2因數實質地設定為5~50,而將聚光點的直徑設定為φ 15~150μm。
依據本發明的SiC晶圓的生成方法,由於是設成在分離起點形成步驟中,將形成聚光點的聚光透鏡之數值孔徑NA設定為0.45~0.9,並且將雷射光束的M2因數實質地設定為5~50,而將聚光點的直徑設定為φ 15μm~150μm,因此儘管聚光透鏡的焦點深度為較淺之5μm以下,仍能以較大的聚光光斑有效率地將良好的分離起點穩定而形成。又,可以充分謀求生產性之提升,並可以充分減低捨棄之晶錠的量。
2:雷射加工裝置
4:靜止基台
6:第一滑塊
8、18:滾珠螺桿
10、20:脈衝馬達
11:SiC晶錠
11a:第一面(上表面)
11b:第二面(下表面)
12:加工進給機構
13:第一定向平面
14、24:導軌
16:第二滑塊
15:第二定向平面
17:第一面之垂直線
19:c軸
21:c面
22:分度進給機構
23:改質層
25:裂隙
26:支撐台
28:柱部
30:雷射光束照射機構
32:罩殼
34:雷射光束產生單元
36:聚光器(雷射頭)
38:攝像單元
40:雷射振盪器
42:重複頻率設定設備
44:脈衝寬度調整設備
46:功率調整設備
48:鏡子
50:聚光透鏡
54:按壓機構
56:頭部
58:按壓構件
60:毛玻璃
62:聚光點
A、R:箭頭
D1:深度
LB:雷射光束
W1、W2:寬度
X、Y、Z、X1、X2、Z:方向
Y1:方向(箭頭)
α:偏角
圖1是適合用於實施本發明之SiC晶圓的生成方法之雷射加工裝置的立體圖。
圖2是雷射光束產生單元的方塊圖。
圖3(A)是SiC晶錠的立體圖,圖3(B)是其正面圖。
圖4是說明分離起點形成步驟之立體圖。
圖5是SiC晶錠之平面圖。
圖6是說明改質層形成步驟之示意剖面圖。
圖7是說明改質層形成步驟之示意平面圖。
圖8(A)是說明分度步驟之示意平面圖,圖8(B)是說明分度量之示意平面圖。
圖9是說明在改質層形成步驟中所照射的雷射光束的M2因數與聚光透鏡的聚光光斑的關係之示意圖。
圖10是說明本發明實施形態的改質層形成步驟之示意圖,本發明實施形態的改質層形成步驟是藉由將M2因數設定成比較大的值,而能夠使用焦點深度較淺的聚光透鏡來形成比較大的面積的改質層。
圖11(A)、(B)是說明晶圓剝離步驟之立體圖。
圖12是所生成之SiC晶圓的立體圖。
以下,參照圖式詳細地說明本發明的實施形態。參照圖1,所示為適合用於實施本發明之SiC晶圓的生成方法之雷射加工裝置2的立體圖。雷射加工裝置2包含有以可在X軸方向上移動之形式搭載於靜止基台4上的第一滑塊6。
第一滑塊6是藉由以滾珠螺桿8及脈衝馬達10所構成之加工進給機構12而沿著一對導軌14在加工進給方向(亦即X軸方向)上移動。
第二滑塊16可在Y軸方向上移動地搭載於第一滑塊6上。亦即,第二滑塊16是藉由以滾珠螺桿18及脈衝馬
達20所構成之分度進給機構22而沿著一對導軌24在分度進給方向(亦即Y軸方向)上移動。
第二滑塊16上搭載有支撐台26。支撐台26是藉由加工進給機構12及分度進給機構22而可在X軸方向及Y軸方向上移動,並且藉由收容於第2滑塊16中的馬達而旋轉。
靜止基台4上豎立設置有柱部28,並且在此柱部28上安裝有雷射光束照射機構(雷射光束照射設備)30。雷射光束照射機構30是由收容於罩殼32中之圖2所示的雷射光束產生單元34、及安裝於罩殼32前端的聚光器(雷射頭)36所構成。罩殼32之前端安裝有與聚光器36在X軸方向上成行且具有顯微鏡及相機之攝像單元38。
如圖2所示,雷射光束產生單元34包含有振盪產生YAG雷射或YVO4雷射之雷射振盪器40、重複頻率設定設備42、脈衝寬度調整設備44、及功率調整設備46。雖然並無特別圖示,但雷射振盪器40具有布如士特窗(brewster window),且由雷射振盪器40射出之雷射光束為直線偏光的雷射光束。
藉由雷射光束產生單元34之功率調整設備46而調整至預定功率的脈衝雷射光束會被聚光器36之鏡子48反射,進而再藉由聚光透鏡50而將聚光點定位於已固定在支撐台26之被加工物(即SiC晶錠11)的內部而進行照射。
參照圖3(A),所示為加工對象物之SiC晶錠(以下,有時簡稱為晶錠)11的立體圖。圖3(B)為圖3(A)所示的SiC晶錠11的正面圖。
晶錠11具有第一面(上表面)11a及與第一面11a為相反側的第二面(下表面)11b。晶錠11之上表面11a為了成為雷射光束之照射面而被研磨成鏡面。
晶錠11具有第一定向平面(orientation flat)13、及與第一定向平面13正交之第二定向平面15。第一定向平面13的長度形成為較第二定向平面15的長度長。
晶錠11具有:相對於上表面11a之垂直線17朝第二定向平面15方向傾斜偏角α的c軸19、及與c軸19正交的c面21。c面21相對於晶錠11的上表面11a傾斜偏角α。一般來說,在SiC晶錠11中,與較短之第二定向平面15的伸長方向正交之方向為c軸的傾斜方向。
c面21在晶錠11中,在晶錠11之分子層級上設定為無數個。本實施形態中,是將偏角α設定為4°。然而,偏角α並不限定於4°,例如可以在1°~6°的範圍內自由地設定來製造晶錠11。
再次參照圖1,靜止基台4的左側固定有柱部52,在此柱部52上是透過形成於柱部52之開口53而將按壓機構54搭載成可在上下方向上移動。
本實施形態之晶圓的生成方法中,如圖4所示,是以例如蠟或接著劑將晶錠11於支撐台26上固定成使晶錠11之第二定向平面15成行於X軸方向。
亦即,如圖5所示,使與形成有偏角α之方向Y1正交之方向,換言之,與c軸19相對於晶錠11之上表面11a的垂直線17與上表面11a之交點19a存在的方向正交的方向
(亦即箭頭A方向)對齊於X軸來將晶錠11固定於支撐台26。
藉此,雷射光束可沿著與形成有偏角α之方向正交的方向A掃描。換言之,與形成有偏角α之方向Y1正交的A方向成為支撐台26的加工進給方向。
在本發明之SiC晶圓的生成方法中,將由聚光器36射出之雷射光束的掃描方向設為與晶錠11之形成有偏角α的方向Y1正交的箭頭A方向,是十分重要的。
亦即,本發明之SiC晶圓的生成方法的特徵在於發現了如下情況:藉由將雷射光束的掃描方向設定為如上述之方向,形成於晶錠11內部之從改質層傳播的裂隙會沿著c面21伸長地非常長。
在本實施形態之SiC晶圓的生成方法中,首先,是實施分離起點形成步驟,該分離起點形成步驟是將對固定在支撐台26之SiC晶錠11具有穿透性之波長(例如1064nm之波長)之雷射光束的聚光點,定位在相當於由第一面(上表面)11a生成之晶圓的厚度的深度上,並且相對地移動聚光點及SiC晶錠11來對上表面11a照射雷射光束,以形成與上表面11a平行之改質層23及從改質層23沿著c面21傳播之裂隙25而形成分離起點。
此分離起點形成步驟包含有改質層形成步驟及分度步驟,該改質層形成步驟是c軸19相對於上表面11a之垂直線17傾斜偏角α角度,並在與c面21和上表面11a形成偏角α之方向正交之方向,亦即圖5之箭頭Y1方向正交的方向(即A方向)上,相對地移動雷射光束之聚光點,以在晶錠
11的內部形成改質層23及從改質層23沿著c面21傳播之裂隙25;該分度步驟是如圖7及圖8所示,在形成有偏角的方向(即Y軸方向)上將該聚光點相對地移動而分度移動預定量。
如圖6及圖7所示,當將改質層23在X軸方向上形成為直線狀時,即由改質層23的兩側沿c面21傳播並形成裂隙25。本實施形態之SiC晶圓的生成方法中,包含分度量設定步驟,其是測量由直線狀的改質層23朝c面方向傳播而形成之裂隙25的寬度,並設定聚光點之分度量。
在分度量設定步驟中,如圖6所示,當將由直線狀之改質層23朝c面方向傳播而形成於改質層23之單側的裂隙25的寬度設為W1時,應分度移動之預定量W2是設定為W1以上且2W1以下。
在此,較理想之實施形態的改質層形成步驟是設定成如下。
光源:Nd:YAG脈衝雷射
波長:1064nm
重複頻率:80kHz
平均輸出:3.2W
脈衝寬度:4ns
光斑點徑:10μm
聚光透鏡之數值孔徑((NA):0.45
分度量:400μm
在上述之雷射加工條件中,於圖6中,將由改質
層23沿著c面傳播之裂隙25的寬度W1設定為大約250μm,且將分度量W2設定為400μm。
然而,雷射光束之平均輸出並不限定於3.2W,在本實施形態之加工方法中,是將平均輸出設定於2W~4.5W而得到良好的結果。在平均輸出2W時,裂隙25之寬度W1成為大約100μm,在平均輸出4.5W時,裂隙25之寬度W1則成為大約350μm。
平均輸出小於2W及較4.5W大時,因為無法在晶錠11內部形成良好的改質層23,所以照射之雷射光束的平均輸出在2W~4.5W的範圍內較理想,在本實施形態中是將平均輸出3.2W的雷射光束照射於晶錠11。圖6中,將形成改質層23之聚光點的距離上表面11a的深度D1設定為500μm。
參照圖8(A),所示為說明雷射光束之掃描方向之示意圖。分離起點形成步驟是在去路X1以及返路X2實施,且已在去路X1上於SiC晶錠11形成改質層23的雷射光束的聚光點會在分度移動預定量之後,在返路X2上於SiC晶錠11形成改質層23。
並且,在分離起點形成步驟中,將雷射光束之聚光點的應分度移動之預定量設定為W以上且2W以下的情況下,宜將直到雷射光束之聚光點定位於SiC晶錠11而形成最初之改質層23為止的聚光點的分度量設定為W以下。
例如,如圖8(B)所示,當雷射光束之聚光點的應分度移動之預定量為400μm時,是以分度量200μm執行複
數次之雷射光束的掃瞄直至在晶錠11形成最初之改質層23為止。
最初之雷射光束的掃瞄為空掃,只要確定最初之改質層23已形成於晶錠11內部,就可以設定成分度量400μm而於晶錠11的內部形成改質層23。
其次,參照圖9以及圖10,說明本發明實施形態的改質層形成步驟,藉由在改質層形成步驟中,將雷射光束的M2因數設定在適度的範圍,可使用焦點深度較淺的聚光透鏡形成比較大的直徑的改質層。
在此,M2因數是指顯示雷射光束的橫向模態的品質之因數,且為顯示實際的雷射光束相較於理想的TEM00之高斯光束差距有多大的數值。在高斯光束的情況下,其為M2=1。
當將以聚光透鏡50所聚光的雷射光束之光斑點徑設為d,將雷射光束的波長設為λ,且將聚光透鏡的數值孔徑設為NA時,會有下述的關係:d=1.22(λ/NA)…(1)。
當設為例如,雷射光束的波長λ=1064nm,聚光透鏡50的數值孔徑NA=0.45時,即成為d=2.88μm。
在本實施形態的改質層形成步驟中,由於將聚光透鏡50的焦點深度設定得比較淺,因此採用了數值孔徑NA為0.45~0.9的範圍內之聚光透鏡50。使用如此的聚光透鏡50,而計算出用於將雷射光束LB的聚光點62之直徑設為15μm~150μm的雷射光束LB的M2因數後,得到M2=5~50。
具有如此大的值的M2因數是與理想的高斯光束有相當大的差距的M2因數,可說是雷射光束LB的品質相當差的雷射光束。亦即,本實施形態的改質層形成步驟所使用的雷射光束LB是品質相當差的雷射光束。
在圖9所示的實施形態中,是在聚光透鏡50的前方(上游側)配設毛玻璃60,且將雷射光束LB的M2因數設定為5~50。
將M2因數實質地設定為5~50的方法是如下所述。
(1)使用M2因數為5~50的雷射振盪器。
(2)如圖9所示,在聚光透鏡50的前方配設毛玻璃60,實質地將雷射光束LB的M2因數設定為5~50。
(3)取代毛玻璃60而在聚光透鏡50的前方配設相位調變器,實質地將雷射光束LB的M2因數設定為5~50。
(4)在聚光透鏡50的前方配設繞射光柵(DOE)並將雷射光束形成多分歧且實質地將雷射光束的M2因數設定為5~50。
(5)使用將雷射光束的M2因數實質地設定為5~50的聚光透鏡50。
(6)將雷射光束入射到多模光纖中,且將從多模光纖射出的雷射光束的M2因數設定為5~50。
參照圖10,所示為將聚光透鏡50的數值孔徑NA設定為0.45~0.9且使用焦點深度比較淺的聚光透鏡50,並且將雷射光束LB的M2因數實質地設定為5~50而形成改質層
23時的示意圖。由於聚光點62的直徑會成為φ 15μm~150μm,因此形成有相較之下面積較大之改質層23、與由改質層23傳播的裂隙25。
由於本實施形態的改質層形成步驟以形成具有比較大的面積之改質層23為主要目的,因此針對如在日本專利特開2013-49461號公報所記載的雷射光束的照射方法也能夠適用。
亦即,不限定於c軸相對於晶錠11的第一面的垂直線傾斜偏角角度,而在與第一面及c面之間形成偏角的方向正交的方向上將雷射光束的聚光點相對地移動之改質層形成步驟上,在與c軸及c面無任何關係的改質層形成步驟上也可適用。
在本實施形態的改質層形成步驟中,因為將聚光透鏡50的數值孔徑NA設定為0.45~0.9,並且將雷射光束LB的M2因數實質地設定為5~50,所以能夠將聚光點的直徑形成為φ 15μm~150μm。
因此,由於能夠形成比較大的面積之改質層23,因此能在SiC晶錠11的內部有效率地形成由改質層23與裂隙25構成的分離起點。
在此,針對最佳的聚光點62之功率密度進行考察。對將聚光點62的直徑為φ 3μm、雷射光束的平均輸出為3W、重複頻率為80kHz的雷射光束的聚光點定位在離晶錠11的上表面11a深度500μm處來照射雷射光束,且以40mm/s的進給速度使聚光點移動而形成的改質層23之軌跡進行了分
析。
最初的改質層23是形成在深度500μm的位置上,但改質層23會以描繪拋物線的方式逐漸地上升,且在相當於100個脈衝且深度400μm的位置上,改質層23穩定而呈水平。對此推測如下。
亦即,雖然最初是以功率密度最高的聚光點形成改質層23,但連續地被照射的雷射光束被在改質層23的上部析出的碳(C)吸收,而使改質層23連鎖地在碳的區域一邊上升一邊形成。然後,在形成改質層23的臨界點的功率密度下穩定。
在臨界點中的聚光光斑62的直徑為φ 41.5μm,且功率密度為2.2×105W/cm2。經進行重複實驗後,已查明的是在功率密度為(2~3)×105W/cm2的範圍內可形成穩定的改質層23。因此,在本實施形態的改質層形成步驟中,是將聚光點中的功率密度設定為(2~3)×105W/cm2。
在晶錠11的全區域的深度D1的位置上複數個改質層23以及從改質層23沿著c面延伸的裂隙25的形成結束後,即可實施晶圓剝離步驟,其為賦予外力以將應從由改質層23以及裂隙25構成的分離起點形成的相當於晶圓的厚度之板狀物由SiC晶錠11分離而生成SiC晶圓27。
此晶圓剝離步驟是藉由例如像是圖11所示之按壓機構54而實施。按壓機構54包含有:藉由內置於柱部52內之移動機構而在上下方向上移動的頭部56;及相對於頭部56,如圖11(B)所示地朝箭頭R方向旋轉之按壓構件58。
如圖11(A)所示,將按壓機構54定位於固定在支撐台26之晶錠11的上方,並如圖11(B)所示地將頭部56降下直至按壓構件58壓接到晶錠11之上表面11a為止。
在按壓構件58壓接到晶錠11之上表面11a的狀態下,將按壓構件58往箭頭R方向旋轉時,於晶錠11會產生扭轉應力,並且使晶錠11由形成有改質層23及裂隙25之分離起點斷裂,而能夠由SiC晶錠11中分離出圖12所示之SiC晶圓27。
較理想的是,將SiC晶圓27由晶錠11分離後,將SiC晶圓27之分離面及晶錠11之分離面研磨來加工成鏡面。
50‧‧‧聚光透鏡
60‧‧‧毛玻璃
62‧‧‧聚光點
LB‧‧‧雷射光束
Claims (3)
- 一種SiC晶圓的生成方法,該SiC晶圓的生成方法的特徵在於:具備:分離起點形成步驟,將對於SiC晶錠具有穿透性之波長的雷射光束的聚光點定位在相當於從SiC晶錠的端面生成的晶圓的厚度之深度上,並且相對地移動該聚光點與該SiC晶錠來對該端面照射雷射光束,以形成平行於該端面的改質層以及從該改質層伸長的裂隙而作為分離起點;及晶圓剝離步驟,實施該分離起點形成步驟後,從該分離起點將相當於晶圓的厚度的板狀物從該SiC晶錠剝離,以生成SiC晶圓,在該分離起點形成步驟中,將形成聚光點的聚光透鏡之數值孔徑設定為0.45~0.9,並且將雷射光束的M2因數實質地設定為5~50,而將聚光點的直徑設定為φ 15~150μm。
- 如請求項1之SiC晶圓的生成方法,其中,該聚光點的功率密度為(2~3)×105W/cm2。
- 一種SiC晶圓的生成方法,是由具有第一面及與該第一面為相反側的第二面、從該第一面到該第二面的c軸、以及與該c軸正交的c面之SiC晶錠中生成SiC晶圓,該SiC晶圓的生成方法之特徵在於: 具備:分離起點形成步驟,將對於SiC晶錠具有穿透性之波長的雷射光束的聚光點定位在相當於從該第一面生成的晶圓的厚度之深度上,並且相對地移動該聚光點與該SiC晶錠來對該第一面照射該雷射光束,以形成平行於該第一面的改質層以及從該改質層伸長的裂隙而作為分離起點;及晶圓剝離步驟,實施該分離起點形成步驟後,從該分離起點將相當於晶圓的厚度的板狀物從該SiC晶錠剝離,以生成SiC晶圓,該分離起點形成步驟包含:改質層形成步驟,該c軸相對於該第一面的垂直線傾斜偏角角度,並在與該第一面及該c面之間形成偏角的方向正交的方向上相對地移動雷射光束的聚光點,以形成直線狀的改質層;及分度步驟,在形成有該偏角的方向上將該聚光點相對地移動而分度移動預定量,在該分離起點形成步驟中,將形成聚光點的聚光透鏡之數值孔徑設定為0.45~0.9,並且將雷射光束的M2因數實質地設定為5~50,而將聚光點的直徑設定為φ 15~150μm。
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