TWI710652B - Cylindrical ceramics spattering target, and apparatus and method for making same - Google Patents

Cylindrical ceramics spattering target, and apparatus and method for making same Download PDF

Info

Publication number
TWI710652B
TWI710652B TW104129904A TW104129904A TWI710652B TW I710652 B TWI710652 B TW I710652B TW 104129904 A TW104129904 A TW 104129904A TW 104129904 A TW104129904 A TW 104129904A TW I710652 B TWI710652 B TW I710652B
Authority
TW
Taiwan
Prior art keywords
cylindrical
target
cylindrical ceramic
substrate
holding member
Prior art date
Application number
TW104129904A
Other languages
Chinese (zh)
Other versions
TW201615873A (en
Inventor
池東求
秋庭里美
武内朋哉
Original Assignee
日商三井金屬鑛業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三井金屬鑛業股份有限公司 filed Critical 日商三井金屬鑛業股份有限公司
Publication of TW201615873A publication Critical patent/TW201615873A/en
Application granted granted Critical
Publication of TWI710652B publication Critical patent/TWI710652B/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/403—Refractory metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Ceramic Products (AREA)

Abstract

This invention provides a cylindrical ceramics spattering target which contains a cylindrical base material, a cylindrical ceramics target material, and a solder for bonding together the cylindrical base material and the cylindrical ceramics target material. The cylindrical ceramics target material has an outside diameter having a variance of 1.0mm or less measured with a dial gage as follows: the dial gage is arranged to contact a position within a section between the points 7mm away in an inward direction from two ends of the cylindrical ceramics spattering target material, while the target material is supported at the points 15mm away in outward direction from the two ends, and the measurement of variance in the diameter is conducted by taking the reading from the dial gage such that the variance between the maximum value and the minimum value at any point of measurement is 1.0mm or less. This invention also provides an apparatus and a method for making such a spattering together which is capable of forming a thin film of uniform quality throughout the life of the spattering target by spattering. The apparatus and the method for making a cylindrical ceramics spattering target is capable of favorably making a cylindrical ceramics spattering target.

Description

圓筒形陶瓷濺鍍靶以及其製造裝置及製造方法 Cylindrical ceramic sputtering target, its manufacturing device and manufacturing method

本發明是關於一種可藉由濺鍍形成均質的薄膜直到使用壽命結束為止之圓筒形陶瓷濺鍍靶，以及該圓筒形陶瓷濺鍍靶之製造裝置及製造方法。 The present invention relates to a cylindrical ceramic sputtering target that can form a homogeneous thin film by sputtering until the end of its service life, and a manufacturing device and method for the cylindrical ceramic sputtering target.

磁控型旋轉陰極濺鍍(magnetronrotary cathode sputtering)裝置，係在圓筒形濺鍍靶的內側具有磁場產生裝置，而由靶的內側開始冷卻，使靶旋轉同時進行濺鍍之裝置，且靶材的全部面是受到侵蝕(erosion)而均勻地削減。因此，相對於在平板型磁控濺鍍裝置之靶材使用效率是20至30%，以磁控型旋轉陰極濺鍍裝置可以實現60%以上的極高使用效率，故可以得到高的生產性。又，因為係使靶旋轉，藉此每單位面積可以投入的動力較傳統之平板型磁控濺鍍裝置大，故可以得到高的成膜速度。圓筒形濺鍍靶，通常是將圓筒形狀的濺鍍靶材藉由焊料接合於圓筒形狀的基材而形成。 The magnetron rotating cathode sputtering device is a device that has a magnetic field generator inside the cylindrical sputtering target, and the cooling starts from the inside of the target to rotate the target while sputtering. The target material All of the surface is eroded and cut evenly. Therefore, the use efficiency of the target material in the flat-plate magnetron sputtering device is 20 to 30%, and the magnetron-type rotating cathode sputtering device can achieve an extremely high use efficiency of more than 60%, so high productivity can be obtained. . In addition, because the target is rotated, the power that can be input per unit area is larger than that of a conventional flat-plate magnetron sputtering device, so a high film forming speed can be obtained. The cylindrical sputtering target is usually formed by joining a cylindrical sputtering target to a cylindrical substrate by soldering.

近年來，平板顯示器或太陽電池所使用的玻璃基板係大型化，而為了在此種經大型化的基板上形成薄 膜，變得需要長度超過3m之長的圓筒形濺鍍靶。 In recent years, glass substrates used in flat panel displays or solar cells have increased in size, and in order to form thinner glass substrates on such large-sized substrates For the film, a cylindrical sputtering target with a length of more than 3m is required.

此種旋轉陰極濺鍍方式，係廣泛普及於容易加工成圓筒形狀且機械性強度強的金屬靶。但是，由於陶瓷靶材是強度低且脆，故在製造中容易產生破裂或變形等。因此，就陶瓷靶而言，雖可以製造短的圓筒形靶材，但難以製造性能高之長的圓筒形靶材。 This rotating sputtering method is widely used in metal targets that are easy to process into a cylindrical shape and have strong mechanical strength. However, since ceramic targets are low in strength and brittle, they are prone to cracks or deformations during manufacturing. Therefore, for ceramic targets, although short cylindrical targets can be produced, it is difficult to produce long cylindrical targets with high performance.

由於如此之情形，就陶瓷靶而言，係在軸線方向並列複數個短的圓筒形靶材而進行使用。 Due to this situation, the ceramic target is used by arranging a plurality of short cylindrical targets in the axial direction.

例如，在專利文獻1中記載將短的圓筒形靶材堆疊而製作長的圓筒形靶材，並揭示使在相鄰圓筒形靶材間的分割部之與相鄰圓筒形靶材的外周面之段差在0.5mm以下，藉此抑制段差所致之電弧或粒子的產生之技術。 For example, Patent Document 1 describes stacking short cylindrical targets to produce a long cylindrical target, and discloses that the division between adjacent cylindrical targets and the adjacent cylindrical target The step difference of the outer peripheral surface of the material is less than 0.5mm, which suppresses the generation of arcs or particles caused by the step difference.

但是，使用如此之堆疊短的圓筒形靶材而製作的長圓筒形靶材來進行濺鍍時，靶材整體並不會均勻地削減，而係在某部位進行局部性侵蝕。此時，被局部侵蝕的部位會露出基材，變成此種情形時，基材會被濺鍍，結果是無法得到均質的濺鍍膜。如此，在由複數個短的圓筒形靶材所成的長的圓筒形靶材中，無法將靶材使用到原本的使用壽命結束為止。如此的局部侵蝕，即使在使用1根圓筒形靶材的情形下也會發生。 However, when sputtering is performed using a long cylindrical target made by stacking short cylindrical targets, the entire target is not uniformly cut, and a certain part is locally eroded. At this time, the part that is locally eroded will expose the substrate. In this case, the substrate will be sputtered, and as a result, a homogeneous sputtered film cannot be obtained. In this way, in a long cylindrical target formed of a plurality of short cylindrical targets, the target cannot be used until the original service life ends. Such local erosion occurs even when one cylindrical target is used.

如上述，就陶瓷靶而言，會有無法確保使用圓筒形濺鍍靶的製造方式之高生產性特徵的問題。 As mentioned above, with regard to ceramic targets, there is a problem that the high productivity characteristics of the manufacturing method using cylindrical sputtering targets cannot be ensured.

[先前技術文獻] [Prior Technical Literature] (專利文獻) (Patent Document)

[專利文獻1]日本特開2010-100930號公報 [Patent Document 1] JP 2010-100930 A

本發明之目的在於提供一種圓筒形陶瓷濺鍍靶，以及該圓筒形陶瓷濺鍍靶之製造裝置及製造方法，該圓筒形陶瓷濺鍍靶係可藉由濺鍍形成均質的薄膜直到使用壽命結束(life end)為止者。 The object of the present invention is to provide a cylindrical ceramic sputtering target, as well as a manufacturing device and manufacturing method of the cylindrical ceramic sputtering target. The cylindrical ceramic sputtering target can form a homogeneous thin film by sputtering. End of life (life end).

本案發明人發現，導致在圓筒形陶瓷濺鍍靶於濺鍍中發生局部性侵蝕，而特定部位的基材在原本使用壽命結束前露出之主要原因，是在於基材與靶材的偏心，遂而完成本發明。 The inventor of the present case discovered that the main reason for the local corrosion of the cylindrical ceramic sputtering target during sputtering, and that the substrate of a specific part is exposed before the end of the original service life is the eccentricity of the substrate and the target. Thus completed the present invention.

亦即，本發明是具備圓筒形基材、圓筒形陶瓷靶材、以及接合前述圓筒形基材與圓筒形陶瓷靶材之焊料的圓筒形陶瓷濺鍍靶，其係將度盤規(dial gauge)對著前述圓筒形陶瓷靶材的外表面之由該圓筒形陶瓷靶材的兩端分別往內側算起7mm的位置，將前述圓筒形基材的外周面之由前述圓筒形陶瓷靶材的兩端分別往外側算起15mm的位置當作支點，使前述圓筒形陶瓷濺鍍靶旋轉1圈，並測定前述度盤規的計測值時，前述度盤規的計測值的最大值與最小值之差在任一測定點皆於1.0mm以下的圓筒形陶瓷濺鍍靶。 That is, the present invention is a cylindrical ceramic sputtering target provided with a cylindrical base material, a cylindrical ceramic target material, and solder that joins the cylindrical base material and the cylindrical ceramic target material. The dial gauge is facing the outer surface of the cylindrical ceramic target at a position 7mm from the two ends of the cylindrical ceramic target to the inside, and the outer peripheral surface of the cylindrical substrate When the cylindrical ceramic sputtering target is rotated one turn from the two ends of the cylindrical ceramic target material 15mm to the outside as a fulcrum, and the measured value of the scale is measured, the scale A cylindrical ceramic sputtering target whose difference between the maximum value and the minimum value of the measured value of the gauge is less than 1.0 mm at any measurement point.

前述圓筒形陶瓷濺鍍靶，以翹曲為0.6mm以 下為佳。 The aforementioned cylindrical ceramic sputtering target with a warpage of 0.6mm or less The next is better.

前述圓筒形陶瓷濺鍍靶中，前述圓筒形陶瓷靶材亦可至少含有2個分割圓筒形陶瓷靶材，此時，將度盤規對著前述各分割圓筒形陶瓷靶材的外表面之由該分割圓筒形陶瓷靶材的兩端分別往內側算起7mm的位置，將前述圓筒形基材的外周面之由前述圓筒形陶瓷靶材的兩端分別往外側算起15mm的位置當支點，使前述圓筒形陶瓷濺鍍靶旋轉1圈，並測定前述度盤規的計測值時，前述度盤規計測值之最大值與最小值的差，係以在任一測定點皆於1.0mm以下為佳。 In the aforementioned cylindrical ceramic sputtering target, the aforementioned cylindrical ceramic target may also contain at least two divided cylindrical ceramic targets. At this time, the dial gauge is directed against the aforementioned divided cylindrical ceramic target. The position of the outer surface is 7mm from the two ends of the divided cylindrical ceramic target to the inside, and the outer peripheral surface of the cylindrical substrate is calculated from the two ends of the cylindrical ceramic target to the outside. When the cylindrical ceramic sputtering target is rotated one turn from the position 15mm from the fulcrum, and the measured value of the aforementioned dial gauge is measured, the difference between the maximum value and the minimum value of the aforementioned dial gauge measurement value is at either The measuring points are preferably below 1.0mm.

前述圓筒形陶瓷濺鍍靶中，當前述圓筒形陶瓷靶材至少含有2個的分割圓筒形陶瓷靶材時，係以相鄰的前述分割圓筒形陶瓷靶材之間的段差皆於0.3mm以下為佳。 In the aforementioned cylindrical ceramic sputtering target, when the aforementioned cylindrical ceramic target contains at least two divided cylindrical ceramic targets, the step difference between the adjacent aforementioned divided cylindrical ceramic targets is all It is better to be less than 0.3mm.

前述圓筒形陶瓷濺鍍靶中，於前述圓筒形基材與前述圓筒形陶瓷靶材的兩端之位移是以在0.5mm以下為佳。 In the cylindrical ceramic sputtering target, the displacement between the cylindrical substrate and the two ends of the cylindrical ceramic target is preferably 0.5 mm or less.

前述圓筒形陶瓷濺鍍靶中，前述圓筒形基材是以鈦製或鈦合金製，或者鉬製或鉬合金製為佳。 In the cylindrical ceramic sputtering target, the cylindrical substrate is preferably made of titanium or titanium alloy, or molybdenum or molybdenum alloy.

在前述圓筒形陶瓷濺鍍靶中，前述圓筒形陶瓷靶材的長度是以在500mm以上為佳。 In the aforementioned cylindrical ceramic sputtering target, the length of the aforementioned cylindrical ceramic target is preferably 500 mm or more.

在前述圓筒形陶瓷濺鍍靶中，前述圓筒形陶瓷靶材的相對密度是以在95%以上為佳。 In the aforementioned cylindrical ceramic sputtering target, the relative density of the aforementioned cylindrical ceramic target is preferably above 95%.

又，本發明的圓筒形陶瓷濺鍍靶之製造裝 置，其係具有：下部保持構件，其係保持直立的圓筒形陶瓷靶材之下端部以及該圓筒形陶瓷靶材之中空部所收容的圓筒形基材之下端部者；靶材保持構件，其係保持前述圓筒形陶瓷靶材的上端部者；基材保持構件，其係保持前述圓筒形基材的上端部者；連結構件，其係連結前述下部保持構件、靶材保持構件以及基材保持構件，且為鈦製或鈦合金製或者鉬製或鉬合金製者。 Moreover, the manufacturing device of the cylindrical ceramic sputtering target of the present invention It has: a lower holding member that holds the lower end of the vertical cylindrical ceramic target and the lower end of the cylindrical substrate housed in the hollow portion of the cylindrical ceramic target; the target A holding member that holds the upper end of the cylindrical ceramic target; a substrate holding member that holds the upper end of the cylindrical substrate; a connecting member that connects the lower holding member and the target The holding member and the substrate holding member are made of titanium or titanium alloy, or molybdenum or molybdenum alloy.

在前述製造裝置中，係以前述連結構件至少包括2根柱狀構件為佳。 In the aforementioned manufacturing apparatus, it is preferable that the aforementioned connecting member includes at least two columnar members.

而且，本發明又是一種使用前述圓筒形陶瓷濺鍍靶的製造裝置的圓筒形陶瓷濺鍍靶之製造方法，其係：藉由前述下部保持構件以及靶材保持構件分別保持前述圓筒形陶瓷靶材的下端部及上端部，藉由前述下部保持構件以及基材保持構件，分別保持在前述圓筒形陶瓷靶材的中空部所收容之鈦製或鈦合金製或者鉬製或鉬合金製的前述圓筒形基材的下端部以及上端部，將前述製造裝置、圓筒形陶瓷靶材及圓筒形基材，加溫至接合前述圓筒形陶瓷靶材與圓筒形基材所使用之焊料的熔點以上之溫度，在前述圓筒形陶瓷靶材與前述圓筒形基材之間所形成的空隙部中，注入已熔解的前述焊料， 將前述製造裝置、圓筒形陶瓷靶材、圓筒形基材及注入至前述空隙部中的焊料，冷卻至較前述焊料的熔點低的溫度。 Furthermore, the present invention is a method for manufacturing a cylindrical ceramic sputtering target using the aforementioned cylindrical ceramic sputtering target manufacturing device, which is: the lower holding member and the target holding member hold the cylindrical The lower end and upper end of the shaped ceramic target are held in the hollow part of the cylindrical ceramic target by the lower holding member and the substrate holding member, respectively, made of titanium or titanium alloy or made of molybdenum or molybdenum. The lower end and upper end of the aforementioned cylindrical substrate made of alloy are heated to join the aforementioned cylindrical ceramic target and the cylindrical substrate by heating the aforementioned manufacturing device, cylindrical ceramic target and cylindrical substrate The temperature above the melting point of the solder used for the material, the molten solder is poured into the void formed between the cylindrical ceramic target and the cylindrical base material, The manufacturing apparatus, the cylindrical ceramic target material, the cylindrical base material, and the solder injected into the void portion are cooled to a temperature lower than the melting point of the solder.

前述製造方法中，前述圓筒形陶瓷靶材也可以是至少由2個的分割圓筒形陶瓷靶材所成，此時，藉由前述下部保持構件以及靶材保持構件分別保持圓筒形陶瓷靶材的下端部及上端部時，前述分割圓筒形陶瓷靶材之間的段差是以調整成0.3mm以下為佳。 In the aforementioned manufacturing method, the cylindrical ceramic target may be made of at least two divided cylindrical ceramic targets. In this case, the cylindrical ceramic is held by the lower holding member and the target holding member, respectively. In the case of the lower end and the upper end of the target, the step difference between the aforementioned divided cylindrical ceramic target is preferably adjusted to 0.3 mm or less.

本發明的圓筒形陶瓷濺鍍靶，可藉由濺鍍形成均質的薄膜直到使用壽命結束為止。本發明的圓筒形陶瓷濺鍍靶的製造裝置以及製造方法，可以適合地製造前述圓筒形陶瓷濺鍍靶。 The cylindrical ceramic sputtering target of the present invention can form a homogeneous thin film by sputtering until the end of its service life. The manufacturing apparatus and manufacturing method of the cylindrical ceramic sputtering target of this invention can manufacture the said cylindrical ceramic sputtering target suitably.

1、11、31‧‧‧圓筒形靶 1, 11, 31‧‧‧Cylindrical target

2、12、22、32、41‧‧‧圓筒形基材 2, 12, 22, 32, 41‧‧‧Cylindrical substrate

3、13、33、42‧‧‧圓筒形靶材 3, 13, 33, 42‧‧‧Cylindrical target

4‧‧‧靶旋轉裝置 4‧‧‧Target rotating device

5a、5b‧‧‧旋轉具 5a、5b‧‧‧Rotating tool

6a、6b、16a、16b、23a、23b‧‧‧端面 6a, 6b, 16a, 16b, 23a, 23b ‧ ‧ end face

7a、7b、17a、17b‧‧‧支點 7a, 7b, 17a, 17b‧‧‧ Fulcrum

13-1、13-2、13-3、13-4、23、42a‧‧‧分割靶材 13-1, 13-2, 13-3, 13-4, 23, 42a‧‧‧Split target

22a‧‧‧外周面 22a‧‧‧Outer peripheral surface

34‧‧‧焊料 34‧‧‧Solder

32a、33a‧‧‧外周線 32a, 33a‧‧‧Outer circumference

32b、33b‧‧‧中心點 32b, 33b‧‧‧center point

40、60‧‧‧製造裝置 40、60‧‧‧Manufacturing equipment

43‧‧‧下部保持構件 43‧‧‧Lower holding member

43a、44a、45a‧‧‧連結構件裝設部 43a, 44a, 45a‧‧‧Connecting member installation part

43b、44b‧‧‧靶材保持部 43b, 44b‧‧‧Target holding part

43c‧‧‧基材保持部 43c‧‧‧Base material holding part

43d、44c、45c‧‧‧固定具 43d, 44c, 45c‧‧‧Fixture

43e、44d、45d‧‧‧裝設孔 43e, 44d, 45d‧‧‧Mounting hole

44‧‧‧靶材保持構件 44‧‧‧Target holding member

45‧‧‧基材保持構件 45‧‧‧Base material holding member

45b‧‧‧基材壓附部 45b‧‧‧Substrate pressing part

46‧‧‧連結構件 46‧‧‧Connecting member

46a‧‧‧柱狀構件 46a‧‧‧Columnar member

47、48、50、51‧‧‧O形環 47, 48, 50, 51‧‧‧O-ring

49‧‧‧空隙部 49‧‧‧Space

62‧‧‧圓筒形靶材壓附構件 62‧‧‧Cylindrical target pressing member

62a‧‧‧結合部 62a‧‧‧Joint

62b‧‧‧壓附部 62b‧‧‧Pressing part

第1圖係表示將圓筒形靶1是在靶旋轉裝置4上放置成水平方向的狀態之概略圖。 FIG. 1 is a schematic diagram showing a state where the cylindrical target 1 is placed on the target rotating device 4 in a horizontal direction.

第2圖係表示將圓筒形靶材是由4個分割靶材所成之圓筒形靶11在靶旋轉裝置4上放置成水平方向的狀態之概略圖。 FIG. 2 is a schematic diagram showing a state in which a cylindrical target 11 made of four divided targets is placed in a horizontal direction on the target rotating device 4.

第3圖係具有由2個分割靶材所成圓筒形陶瓷靶材之圓筒形靶的概略部分說明圖。 Fig. 3 is a schematic partial explanatory view of a cylindrical target having a cylindrical ceramic target formed by two divided targets.

第4圖係表示圓筒形陶瓷濺鍍靶31的一端面之圖。 FIG. 4 is a diagram showing one end surface of a cylindrical ceramic sputtering target 31. FIG.

第5圖係表示本發明圓筒形陶瓷濺鍍靶的製造裝置之 一具體例的製造裝置40之縱向截面圖。 Figure 5 shows one of the manufacturing equipment of the cylindrical ceramic sputtering target of the present invention A longitudinal cross-sectional view of a specific example of the manufacturing device 40.

第6圖係表示圓筒形陶瓷濺鍍靶的一端面之圖。 Figure 6 is a diagram showing one end surface of a cylindrical ceramic sputtering target.

第7圖係ITO圓筒形濺鍍靶的製造裝置60之縱向截面圖。 FIG. 7 is a longitudinal cross-sectional view of the manufacturing apparatus 60 of the ITO cylindrical sputtering target.

第8圖係表示實施例1所製造的ITO圓筒形濺鍍靶在濺鍍時的侵蝕狀態之照片。 Figure 8 is a photograph showing the erosion state of the ITO cylindrical sputtering target manufactured in Example 1 during sputtering.

第9圖係表示在比較例1所製造的ITO圓筒形濺鍍靶在濺鍍時的侵蝕狀態之照片。 Fig. 9 is a photograph showing the erosion state of the ITO cylindrical sputtering target manufactured in Comparative Example 1 during sputtering.

[圓筒形陶瓷濺鍍靶] [Cylindrical ceramic sputtering target]

本發明的圓筒形陶瓷濺鍍靶，係具備圓筒形基材、圓筒形陶瓷靶材、以及將前述圓筒形基材與圓筒形陶瓷靶材接合之焊料的圓筒形陶瓷濺鍍靶，其特徵為：在將前述圓筒形陶瓷靶材的外表面之由該圓筒形陶瓷靶材的兩端分別往內側算起7mm的位置對著度盤規，將前述圓筒形基材的外周面之由前述圓筒形陶瓷靶材的兩端分別往外側算起15mm的位置當作支點，使前述圓筒形陶瓷濺鍍靶旋轉1圈，並測定前述度盤規的計測值時，前述度盤規計測值的最大值與最小值之差，於任一測定點皆於1.0mm以下。 The cylindrical ceramic sputtering target of the present invention is a cylindrical ceramic sputtering target provided with a cylindrical substrate, a cylindrical ceramic target, and solder that joins the cylindrical substrate and the cylindrical ceramic target. The plating target is characterized in that the outer surface of the cylindrical ceramic target material is positioned 7mm from both ends of the cylindrical ceramic target material to the dial gauge, and the cylindrical shape On the outer peripheral surface of the base material, a position 15mm from the two ends of the cylindrical ceramic target to the outside is used as a fulcrum, the cylindrical ceramic sputtering target is rotated one turn, and the measurement of the aforementioned dial gauge is measured When the value is measured, the difference between the maximum value and the minimum value of the aforementioned dial gauge measurement value is less than 1.0mm at any measurement point.

本發明的圓筒形陶瓷濺鍍靶(以下亦稱為圓筒形靶)，係圓筒形基材被收容在圓筒形陶瓷靶材(以下亦稱為圓筒形靶材)的中空部，而圓筒形基材與圓筒形靶材是藉由焊料而接合。 The cylindrical ceramic sputtering target (hereinafter also referred to as a cylindrical target) of the present invention is a cylindrical substrate housed in the hollow portion of a cylindrical ceramic target (hereinafter also referred to as a cylindrical target) , And the cylindrical substrate and the cylindrical target are joined by solder.

第1圖係表示將圓筒形靶1在靶旋轉裝置4上放置成水平方向之狀態的概略圖。圓筒形靶1係具備圓筒形基材2，與藉由焊料接合在圓筒形基材2的圓筒形靶材3。靶旋轉裝置4係具有旋轉具5a以及5b。圓筒形靶1，是以旋轉具5a及5b對接在圓筒形基材2的兩端部之方式，放置在靶旋轉裝置4上。旋轉具5a及5b對接在圓筒形基材2之處，為旋轉的支點7a以及7b。支點7a以及7b，是以分別位於圓筒形靶材3的端面6a以及6b之外側15mm的位置之方式調整。 FIG. 1 is a schematic diagram showing a state where the cylindrical target 1 is placed on the target rotating device 4 in a horizontal direction. The cylindrical target 1 includes a cylindrical base material 2 and a cylindrical target material 3 joined to the cylindrical base material 2 by solder. The target rotating device 4 has rotating tools 5a and 5b. The cylindrical target 1 is placed on the target rotating device 4 in such a way that the rotating tools 5a and 5b are butted against both ends of the cylindrical base material 2. The places where the rotating tools 5a and 5b abut on the cylindrical base material 2 are pivot points 7a and 7b of rotation. The fulcrums 7a and 7b are adjusted so that they are located 15 mm outside the end faces 6a and 6b of the cylindrical target 3, respectively.

箭頭Xa表示，將圓筒形靶材3的外表面之由端面6a往內側算起7mm的位置對著度盤規(未圖示)。而驅動靶旋轉裝置4，使圓筒形靶1旋轉1圈。連續測定此時之度盤規的計測值，算出該計測值之最大值與最小值的差Da。同樣的，箭頭Xb表示，將圓筒形靶材3的外表面之由端面6b往內側算起7mm的位置對著度盤規(未圖示)。驅動靶旋轉裝置4，使圓筒形靶1旋轉1圈。連續測定此時之度盤規的計測值，算出該計測值之最大值與最小值的差Db。使圓筒形靶1旋轉1圈之間的度盤規計測值為一定時，最大值與最小值的差是0mm。本發明的圓筒形靶中，在箭頭Xa以及Xb所示測定點所分別得到的最大值與最小值之差Da以及Db皆於1.0mm以下。以下，亦將上述度盤規計測值的最大值與最小值之差稱為「偏心」。 The arrow Xa indicates that the outer surface of the cylindrical target 3 is facing a dial gauge (not shown) at a position 7 mm from the end surface 6a inward. The target rotating device 4 is driven to rotate the cylindrical target 1 one turn. The measured value of the dial gauge at this time is continuously measured, and the difference Da between the maximum value and the minimum value of the measured value is calculated. Similarly, the arrow Xb indicates that the outer surface of the cylindrical target 3 is facing the dial gauge (not shown) at a position 7 mm from the end surface 6b to the inside. The target rotating device 4 is driven to rotate the cylindrical target 1 one turn. The measured value of the dial gauge at this time is continuously measured, and the difference Db between the maximum value and the minimum value of the measured value is calculated. When the measured value of the dial gauge between one rotation of the cylindrical target 1 is constant, the difference between the maximum value and the minimum value is 0 mm. In the cylindrical target of the present invention, the differences Da and Db between the maximum value and the minimum value obtained at the measurement points indicated by arrows Xa and Xb are both 1.0 mm or less. Hereinafter, the difference between the maximum value and the minimum value of the above-mentioned dial gauge measurement value is also referred to as "eccentricity".

本發明的圓筒形靶中，在各測定點得到的偏心皆於1.0mm以下，藉此，濺鍍中不會有於圓筒形靶材的 特定部位進行局部性侵蝕而該部位之基材在原本的使用壽命結束之前露出之情形，而係在靶材的全部面進行均勻的侵蝕，故可以形成均質的薄膜直到靶材原本的使用壽命結束為止。另一方面，當在各測定點得到的至少1個偏心大於1.0mm時，則濺鍍中在圓筒形靶材的特定部位會進行局部性侵蝕，因此容易在靶材到原本的使用壽命結束前於該部位露出基材。咸認此係因為，在濺鍍中，圓筒形靶係將圓筒形基材的軸線當作旋轉軸進行旋轉，因此在前述偏心大於1.0mm時，濺鍍面的圓筒形靶材之外周面在每個部位之旋轉半徑的差別會變大，結果造成濺鍍面在每個部位接受之能量差別較大，而使得接受到的能量特別大之部位會先被侵蝕之故。 In the cylindrical target of the present invention, the eccentricity obtained at each measuring point is less than 1.0mm, so that there is no difference in sputtering compared to the cylindrical target. A situation where a specific part undergoes localized erosion and the base material of that part is exposed before the end of its original service life. The entire surface of the target is uniformly eroded, so a homogeneous film can be formed until the original service life of the target ends. until. On the other hand, when at least one eccentricity obtained at each measurement point is greater than 1.0 mm, the specific part of the cylindrical target material will be locally corroded during sputtering, so it is easy to reach the end of the target material's original life. Expose the substrate at this location before. It is believed that this is because in sputtering, the cylindrical target is rotated by taking the axis of the cylindrical substrate as a rotating shaft. Therefore, when the aforementioned eccentricity is greater than 1.0 mm, the cylindrical target on the sputtering surface The difference in the radius of rotation of the outer peripheral surface at each part will become larger, resulting in a larger difference in the energy received by the sputtering surface at each part, and the parts with particularly large energy received will be eroded first.

在圓筒形濺鍍靶中，圓筒形基材與圓筒形靶材的偏心的產生，係由於在接合圓筒形基材與圓筒形靶材時，即使將圓筒形基材與圓筒形靶材的位置調整到沒有偏心，於接合時的加熱以及冷卻等過程中，兩者的位置關係也會有所變動之故。本發明是藉由後述的圓筒形陶瓷濺鍍靶的製造裝置以及製造方法，而實現使前述偏心在1.0mm以下之圓筒形陶瓷濺鍍靶者。 In the cylindrical sputtering target, the eccentricity between the cylindrical substrate and the cylindrical target is caused by the fact that when the cylindrical substrate and the cylindrical target are joined, even if the cylindrical substrate and the cylindrical target are joined The position of the cylindrical target is adjusted so that there is no eccentricity, and the positional relationship between the two will also change during the heating and cooling processes during bonding. The present invention realizes the cylindrical ceramic sputtering target whose eccentricity is 1.0 mm or less by the manufacturing apparatus and manufacturing method of the cylindrical ceramic sputtering target described later.

本發明的圓筒形靶中，在各測定點得到的偏心是愈小為愈佳，任一偏心皆於1.0mm以下，而以在0.6mm以下為佳，在0.4mm以下為更佳。 In the cylindrical target of the present invention, the smaller the eccentricity obtained at each measurement point is, the better, and any eccentricity is 1.0 mm or less, preferably 0.6 mm or less, and more preferably 0.4 mm or less.

本發明的圓筒形靶，翹曲以在0.6mm以下為佳，以0.4mm以下為較佳，以0.2mm以下為更佳。當圓 筒形靶的翹曲在0.6mm以下時，則在濺鍍中，係於靶材全部面進行均勻的侵蝕，容易形成均質的膜直到靶材原本的使用壽命結束為止。 The cylindrical target of the present invention preferably has a warpage of 0.6 mm or less, preferably 0.4 mm or less, and more preferably 0.2 mm or less. When round When the warpage of the cylindrical target is 0.6 mm or less, during sputtering, the entire surface of the target is uniformly eroded, and a homogeneous film is easily formed until the target's original service life ends.

圓筒形靶的翹曲可以下述方式測定。 The warpage of the cylindrical target can be measured in the following manner.

將圓筒形靶1，例如在第1圖的靶旋轉裝置4上靜置成水平方向。沿著圓筒形靶材3的長度方向，將圓筒形靶材3的外表面對著直邊，使用間隙尺測定圓筒形靶材3與直邊之間可能的間隙之最大長度。將最初的測定點當作基準，在圓周方向以45度間隔所定出的合計8個的測定點進行前述測定，將得到的8個最大長度之中的最大值當作圓筒形靶1的翹曲。 The cylindrical target 1 is allowed to stand still in the horizontal direction on the target rotating device 4 of FIG. 1, for example. Along the length direction of the cylindrical target 3, the outer surface of the cylindrical target 3 faces the straight side, and the maximum length of the possible gap between the cylindrical target 3 and the straight side is measured using a gap ruler. Taking the first measurement point as the reference, the measurement points in total are determined at 45-degree intervals in the circumferential direction for the aforementioned measurement, and the maximum value among the eight maximum lengths obtained is regarded as the warpage of the cylindrical target 1. song.

由於翹曲可藉由如此的測定方法而得到，因此，例如當圓筒形靶整體翹成完整的弓狀之情形下，係以凸狀側鉛垂朝下的方式靜置圓筒形靶，而以在此鉛垂朝上之側對著直邊進行測定時以間隙尺測定之圓筒形靶的長度方向的中央部之值當作翹曲。 Since the warpage can be obtained by such a measuring method, for example, when the entire cylindrical target is warped into a complete bow shape, the cylindrical target is allowed to stand with the convex side facing downward. The value of the central portion in the longitudinal direction of the cylindrical target measured with a gap ruler when measuring the straight side on the vertically upward side is regarded as the warpage.

本發明的圓筒形靶中，圓筒形靶材也可以含有2個以上的分割圓筒形陶瓷靶材(以下亦稱為分割靶材)。此時，2個以上的圓筒形分割靶材是彼此間有一定之間隙而接合在圓筒形基材。 In the cylindrical target of the present invention, the cylindrical target may contain two or more divided cylindrical ceramic targets (hereinafter also referred to as divided targets). At this time, two or more cylindrical divided targets are joined to the cylindrical base material with a certain gap between each other.

就本發明的圓筒形靶而言，當圓筒形靶材是只由一個靶材所成時，如前述般，藉由規定由該圓筒形靶材的兩端部之圓筒形靶材與圓筒形基材的位置關而得到的偏心，雖能得到可形成均質膜直到使用壽命結束為止之效 果，惟當圓筒形靶材是由2個以上的分割靶材所成時，使於各個分割靶材之兩端部的偏心在一定的數值範圍一事係屬重要。亦即，將度盤規對著各分割靶材的外表面之由該分割靶材的兩端部到內側7mm的位置，將前述圓筒形基材的外周面之由前述圓筒形陶瓷靶材的兩端分別往外側算起15mm的位置當作支點，使前述圓筒形陶瓷濺鍍靶旋轉1圈，並測定前述度盤規的計測值時，前述度盤規計測值的最大值與最小值之差，在任一測定點皆於1.0mm以下。有關圓筒形靶材是由2個以上的分割靶材所成時的偏心，係參照以下圖式來說明。 With regard to the cylindrical target of the present invention, when the cylindrical target is made of only one target, as described above, by defining the cylindrical target at both ends of the cylindrical target The eccentricity obtained by the position of the cylindrical base material and the cylindrical base material can form a homogeneous film until the end of the service life. As a result, only when the cylindrical target material is composed of two or more segmented targets, it is important to make the eccentricity of the two ends of each segmented target within a certain range of values. That is, the dial gauge is opposed to the outer surface of each divided target at a position 7 mm from both ends of the divided target to the inner side, and the outer peripheral surface of the cylindrical substrate is divided by the cylindrical ceramic target When the two ends of the material are 15mm away from the outside as fulcrums, the cylindrical ceramic sputtering target is rotated one turn, and the measured value of the aforementioned dial gauge is measured. The maximum value of the aforementioned dial gauge The difference between the minimum values is less than 1.0mm at any measurement point. The eccentricity when the cylindrical target material is formed by two or more divided targets is explained with reference to the following drawings.

第2圖係表示圓筒形靶材是由4個分割靶材而成之圓筒形靶11，該圓筒形靶11為放置在靶旋轉裝置4上成水平方向狀態之概略圖。圓筒形靶11，係具備圓筒形基材12、與藉由焊料接合在圓筒形基材12上的圓筒形靶材13。圓筒形靶材13是由分割靶材13-1、13-2、13-3以及13-4所成，依分割靶材13-1至13-4的順序以一定的間隔配置。關於靶旋轉裝置4以及支點17a及17b，係與第1圖之說明相同。 FIG. 2 shows a cylindrical target 11 in which the cylindrical target material is divided into four target materials. The cylindrical target 11 is a schematic view of a state where it is placed on the target rotating device 4 in a horizontal direction. The cylindrical target 11 includes a cylindrical base material 12 and a cylindrical target material 13 joined to the cylindrical base material 12 by solder. The cylindrical target 13 is composed of divided targets 13-1, 13-2, 13-3, and 13-4, and is arranged at regular intervals in the order of the divided targets 13-1 to 13-4. The target rotating device 4 and the fulcrums 17a and 17b are the same as the description in FIG. 1.

箭頭X1a表示，將分割靶材13-1的外表面之由端面16a往內側算起7mm的位置對著度盤規(未圖示)。驅動靶旋轉裝置4，使圓筒形靶11旋轉1圈。連續測定此時的度盤規之計測值，算出該計測值的最大值與最小值之差D1a。同樣的，箭頭X1b表示，將分割靶材13-1的外表面之由端面16b往內算起7mm的位置對著度盤規(未圖 示)。驅動靶旋轉裝置4，使圓筒形靶11旋轉1圈。連續測定此時的度盤規之計測值，算出此計測值的最大值與最小值之差D1b。以下同樣地，對於分割靶材13-2係在箭頭X2a以及X2b表示之測定點，對於分割靶材13-3係在箭頭X3a以及X3b表示之測定點，以及對於分割靶材13-4係在箭頭X4a以及X4b表示的測定點，進行上述操作，求出差D2a、D2b、D3a、D3b、D4a以及D4b。當圓筒形靶11旋轉1圈之間的度盤規計測值為一定時，最大值與最小值的差是0mm。本發明的圓筒形靶中，差D1a、D1b、D2a、D2b、D3a、D3b、D4a以及D4b的任一者皆於1.0mm以下。分割靶材的個數為4個以外時之偏心亦與上述相同。 The arrow X1a indicates that the outer surface of the segmented target 13-1 is facing a dial gauge (not shown) at a position 7 mm from the end surface 16a inward. The target rotating device 4 is driven to rotate the cylindrical target 11 one turn. The measured value of the dial gauge at this time is continuously measured, and the difference D1a between the maximum value and the minimum value of the measured value is calculated. Similarly, the arrow X1b indicates that the outer surface of the segmented target 13-1 is 7mm from the end surface 16b inward facing the dial gauge (not shown) Show). The target rotating device 4 is driven to rotate the cylindrical target 11 one turn. Continuously measure the measured value of the dial gauge at this time, and calculate the difference D1b between the maximum value and the minimum value of this measured value. In the same manner below, the measurement points indicated by arrows X2a and X2b for the segmented target 13-2, the measurement points indicated by arrows X3a and X3b for the segmented target 13-3, and the measurement points indicated by the arrows X3a and X3b for the segmented target 13-4. At the measurement points indicated by the arrows X4a and X4b, the above operations are performed to find the differences D2a, D2b, D3a, D3b, D4a, and D4b. When the measured value of the dial gauge between one rotation of the cylindrical target 11 is constant, the difference between the maximum value and the minimum value is 0 mm. In the cylindrical target of the present invention, any of the differences D1a, D1b, D2a, D2b, D3a, D3b, D4a, and D4b is less than 1.0 mm. When the number of divided targets is other than 4, the eccentricity is the same as above.

圓筒形靶材是由2個以上的分割靶材所成時，於各測定點得到的偏心係以愈小為愈佳，任一偏心皆於1.0mm以下，而以於0.6mm以下為佳，以於0.4mm以下為更佳。 When the cylindrical target material is composed of two or more divided targets, the smaller the eccentricity obtained at each measurement point, the better. Any eccentricity is less than 1.0mm, and preferably less than 0.6mm , Preferably less than 0.4mm.

當圓筒形靶材含有2個以上的分割靶材時，分割靶材之間的段差以在0.3mm以下為佳。使用第3圖來說明分割靶材之間的段差。第3圖是具有由2個的分割靶材而成的圓筒形靶材之圓筒形靶的概略部分說明圖。在鄰接2個的分割靶材23之互相面對的2個端面，於兩端面之外周線上的點之中，將於圓筒形基材22的軸線Z呈垂直的方向，且由圓筒形基材22的外周面22a算起的距離成為最大值處設為X點。將於含X點且垂直於軸線Z之方向D之由X點至外周面22a的距離當作LX。在相對於含X點之 端面23a之端面23b的外周上，求出在方向D之Y點。將於Y點之在前述方向D之至外周面22a的距離當作LY。LX與LY的差LX-LY即係分割靶材之間的段差。 When the cylindrical target material contains two or more divided targets, the step difference between the divided targets is preferably 0.3 mm or less. Use Figure 3 to illustrate the step difference between the segmented targets. Fig. 3 is a schematic partial explanatory view of a cylindrical target having a cylindrical target formed by two divided targets. On the two end faces facing each other of the two adjacent divided targets 23, among the points on the outer circumference of the end faces, the axis Z of the cylindrical base material 22 is in a vertical direction, and is formed by a cylindrical shape. The point where the distance from the outer peripheral surface 22a of the base material 22 becomes the maximum value is set to X point. The distance from the X point to the outer peripheral surface 22a in the direction D including the X point and perpendicular to the axis Z is regarded as L X. On the outer circumference of the end surface 23b with respect to the end surface 23a containing the X point, the Y point in the direction D is obtained. The distance from the Y point in the aforementioned direction D to the outer peripheral surface 22a is regarded as L Y. The difference between L X and L Y , L X -L Y , is the level difference between the segmented targets.

圓筒形靶材是由N個之分割靶材所成時，存在有N-1個分割靶材間之段差。本發明的圓筒形靶，係以N-1個的前述段差皆在0.3mm以下為佳。前述段差較佳是在0.2mm以下，最佳是0mm。 When the cylindrical target is made of N divided targets, there is a step difference between N-1 divided targets. For the cylindrical target of the present invention, it is preferable that the aforementioned step difference of N-1 pieces is less than 0.3 mm. The aforementioned step difference is preferably 0.2 mm or less, most preferably 0 mm.

有圓筒形靶之前述段差的至少1個是比0.3mm大時，與前述偏心的情形相同，在濺鍍中能量會集中於靶材的特定部位，而在該部位可能會有產生異常放電、進行局部性的侵蝕之情形。其結果為，可能會產生破裂，抑或導致在進行局部性侵蝕而靶材材料的陶瓷被完全消耗時，黏接材所使用的焊料等的基底材質被濺鍍。 When at least one of the aforementioned steps of a cylindrical target is larger than 0.3mm, as in the case of the aforementioned eccentricity, energy will be concentrated on a specific part of the target during sputtering, and abnormal discharge may occur at this part , The situation of local erosion. As a result, cracks may occur, or the base material such as solder used in the bonding material may be sputtered when the ceramic of the target material is completely consumed due to local erosion.

本發明的圓筒形靶中，在圓筒形基材與圓筒形靶材的兩端以位移是0.5mm以下為佳。 In the cylindrical target of the present invention, the displacement at both ends of the cylindrical base material and the cylindrical target material is preferably 0.5 mm or less.

本發明中，於圓筒形基材與圓筒形靶材的兩端之位移是指，在圓筒形靶的兩端面之圓筒形靶材的外周線之中心點與圓筒形基材的外周線之中心點的距離。第4圖是表示圓筒形靶31的一端面之圖。圓筒形靶31是由圓筒形基材32、圓筒形靶材33、以及接合圓筒形基材32與圓筒形靶材33的焊料34所成。將圓筒形基材32的外周線32a之中心點32b與圓筒形靶材33的外周線33a之中心點33b的距離當作LA。在圓筒形靶1之另一端面，也同樣地將圓筒形基材32的外周線之中心點與圓筒形靶材33的外 周線之中心點之距離當作LB。即使圓筒形靶材是由2個以上的分割靶材所成時，圓筒形基材與圓筒形靶材的位移也是以與上述相同的方式定義。 In the present invention, the displacement at both ends of the cylindrical substrate and the cylindrical target refers to the center point of the outer circumference of the cylindrical target on both ends of the cylindrical target and the cylindrical substrate The distance between the center point of the outer circumference of the FIG. 4 is a diagram showing one end surface of a cylindrical target 31. FIG. The cylindrical target 31 is formed of a cylindrical base material 32, a cylindrical target material 33, and a solder 34 that joins the cylindrical base material 32 and the cylindrical target material 33. The distance between the center point 32b of the outer circumference line 32a of the cylindrical base material 32 and the center point 33b of the outer circumference line 33a of the cylindrical target material 33 is taken as L A. On the other end surface of the cylindrical target 1, the distance between the center point of the outer circumference of the cylindrical base material 32 and the center point of the outer circumference of the cylindrical target 33 is similarly regarded as L B. Even when the cylindrical target material is composed of two or more divided targets, the displacement of the cylindrical base material and the cylindrical target material is defined in the same manner as described above.

於圓筒形基材與圓筒形靶材的兩端之位移，係可藉由求得在端面中之圓筒形靶材的外周線之中心點與圓筒形基材的外周線之中心點，並測定此等中心點的距離而求出，亦可以用實施例表示之方法求出。 The displacement at both ends of the cylindrical substrate and the cylindrical target can be obtained by calculating the center point of the outer circumference of the cylindrical target and the center of the outer circumference of the cylindrical substrate It can be obtained by measuring the distance between these isocenter points. It can also be obtained by the method shown in the examples.

本發明的圓筒形靶，係以前述位移LA、LB皆於0.5mm以下為佳。前述位移係以愈小為愈佳，較佳是0.3mm以下，更佳是0.1mm以下，以0mm為最佳。 For the cylindrical target of the present invention, it is preferable that the aforementioned displacements L A and L B are both 0.5 mm or less. The aforementioned displacement is preferably as small as possible, preferably 0.3 mm or less, more preferably 0.1 mm or less, and most preferably 0 mm.

本發明的圓筒形靶中，圓筒形靶材的長度，只要可評估前述偏心即無特別限制，一般是500至4000mm。在圓筒形靶材是由複數的分割靶材所成時，分割靶材的合計長度與分割靶材間之間隙的合計長度的和，係前述圓筒形靶材的長度。 In the cylindrical target of the present invention, the length of the cylindrical target is not particularly limited as long as the aforementioned eccentricity can be evaluated, and is generally 500 to 4000 mm. When the cylindrical target is formed of a plurality of divided targets, the sum of the total length of the divided targets and the total length of the gap between the divided targets is the length of the aforementioned cylindrical target.

前述圓筒形基材與圓筒形靶材，因為是藉由以金屬銦等為成分的焊料接合，故在圓筒形靶材是由分割圓筒形靶材所成之情形下，當使用的分割圓筒形靶材的個數太多時，會成為產生偏心、段差之原因。因此，對於一個圓筒形基材所接合之分割靶材的個數，是以10個以下為佳，較佳是7個以下，更佳是3個以下。 The aforementioned cylindrical base material and cylindrical target material are joined by solder containing metal indium or the like. Therefore, when the cylindrical target material is formed by dividing the cylindrical target material, it should be used If the number of divided cylindrical targets is too large, it will cause eccentricity and step difference. Therefore, the number of divided targets joined to one cylindrical base material is preferably 10 or less, preferably 7 or less, and more preferably 3 or less.

同樣的，當分割靶材之長度太短時，則分割靶材的個數會增加，而對應所使用之靶材長度的分割數變得太多。因此，分割靶材的長度係以在300mm以上為佳， 較佳是450mm以上，更佳是600mm以上，特佳是850mm以上。分割靶材的長度不需彼此相同，也可以組合使用不同長度的分割靶材。例如，為了調整圓筒形靶材整體的長度，也可以組合使用1至2個比長的分割靶材300mm短的分割靶材。 Similarly, when the length of the segmented target is too short, the number of segmented targets will increase, and the number of segments corresponding to the length of the target used will become too much. Therefore, the length of the segmented target is better than 300mm. It is preferably 450 mm or more, more preferably 600 mm or more, and particularly preferably 850 mm or more. The lengths of the segmented targets do not need to be the same as each other, and segmented targets of different lengths can be used in combination. For example, in order to adjust the length of the entire cylindrical target, one to two divided targets shorter than 300 mm of the long divided target may be used in combination.

圓筒形靶材是由2個以上的分割靶材所成時，分割靶材間的間隙通常是0.1至0.5mm。 When the cylindrical target material is composed of two or more divided targets, the gap between the divided targets is usually 0.1 to 0.5 mm.

圓筒形靶材的外徑，通常是145至177mm，內徑通常是134至136mm。 The outer diameter of the cylindrical target is usually 145 to 177mm, and the inner diameter is usually 134 to 136mm.

就圓筒形靶材材料的陶瓷種類而言，並無特別限制，例如可以列舉：氧化銦-氧化錫系材料(ITO)、氧化鋁-氧化鋅系材料(AZO)以及氧化銦-氧化鎵-氧化鋅系材料(IGZO)等。 The ceramic type of the cylindrical target material is not particularly limited. Examples include indium oxide-tin oxide-based materials (ITO), aluminum oxide-zinc oxide-based materials (AZO), and indium oxide-gallium oxide- Zinc oxide-based materials (IGZO), etc.

圓筒形靶材的相對密度，理想的是95%以上，較佳是99%以上，更佳是99.5%以上。靶材的相對密度愈高，則愈可以防止因濺鍍時的熱衝擊或溫度差等所造成之靶材破裂，而可不浪費地有效活用靶材厚度。而且，可減低粒子以及電弧的發生，而可得到良好的膜質。前述相對密度的上限並無特別限制，惟通常是100%。 The relative density of the cylindrical target is desirably 95% or more, preferably 99% or more, and more preferably 99.5% or more. The higher the relative density of the target, the more it is possible to prevent the target from cracking due to thermal shock or temperature difference during sputtering, and the thickness of the target can be effectively used without waste. Moreover, the occurrence of particles and arcs can be reduced, and good film quality can be obtained. The upper limit of the aforementioned relative density is not particularly limited, but is usually 100%.

前述圓筒形基材是如第1圖以及第2圖等所示，較圓筒形靶材長，並具有可接合前述圓筒形靶材的大小，只要可評估前述之偏心，其長度就無特別限制。圓筒形基材的材料，係以與在靶材使用的陶瓷有相近之熱膨脹係數的鈦或鈦合金或者鉬或鉬合金等為佳。鈦合金是指以 鈦為主成分的合金，通常是指鈦含量為90至99質量%之合金，ASTM規格已知有Gr.5、Gr.7、Gr.9、Gr.11、Gr.12等。鉬合金是指以鉬作為主成分之合金，通常是指鉬含量為50至99.95質量%的合金，已知有TZM、HMC、Mo-W、Mo-Re、Mo-La等。相對於此，當使用通常所使用的銅、SUS當作圓筒形基材的材料時，由於圓筒形基材與圓筒形靶材的熱膨脹係數之差大，因此會有在接合時靶材破裂、難以得到沒有翹曲的圓筒形基材等不良情形。 The aforementioned cylindrical substrate is longer than the cylindrical target as shown in Figures 1 and 2, and has a size that can be joined to the aforementioned cylindrical target. As long as the aforementioned eccentricity can be evaluated, its length is There are no special restrictions. The material of the cylindrical substrate is preferably titanium or titanium alloy or molybdenum or molybdenum alloy which has a thermal expansion coefficient similar to that of the ceramic used in the target. Titanium alloy refers to An alloy with titanium as the main component usually refers to an alloy with a titanium content of 90 to 99% by mass. ASTM specifications are known as Gr.5, Gr.7, Gr.9, Gr.11, Gr.12, etc. Molybdenum alloy refers to an alloy with molybdenum as the main component, usually refers to an alloy with a molybdenum content of 50 to 99.95% by mass, and known as TZM, HMC, Mo-W, Mo-Re, Mo-La, etc. In contrast, when copper and SUS, which are commonly used, are used as the material of the cylindrical base material, the difference in thermal expansion coefficient between the cylindrical base material and the cylindrical target material is large. The material is broken, and it is difficult to obtain a cylindrical substrate without warpage.

前述焊料，其種類並無特別限制，可視靶材而從以往使用的焊料中適當選擇使用，例如可以列舉銦製的焊料等。 The type of the aforementioned solder is not particularly limited, and can be appropriately selected and used from conventionally used solders depending on the target material. For example, solder made of indium can be cited.

[圓筒形陶瓷濺鍍靶的製造裝置以及製造方法] [Manufacturing device and manufacturing method of cylindrical ceramic sputtering target]

上述圓筒形陶瓷濺鍍靶，係可藉由以下的圓筒形陶瓷濺鍍靶的製造裝置以及製造方法而製造。 The cylindrical ceramic sputtering target can be manufactured by the following cylindrical ceramic sputtering target manufacturing apparatus and manufacturing method.

前述圓筒形陶瓷濺鍍靶的製造裝置(以下亦稱為圓筒形靶的製造裝置)，係具有：下部保持構件，其係保持(維持)直立圓筒形陶瓷靶材的下端部以及該圓筒形陶瓷靶材的中空部中所收容之圓筒形基材下端部者；靶材保持構件，其係保持前述圓筒形陶瓷靶材的上端部者；基材保持構件，其係保持前述圓筒形基材的上端部者；與連結構件，其係連結前述下部保持構件、靶材保持構 件以及基材保持構件的鈦製或鈦合金製或者鉬製或鉬合金製者。 The aforementioned cylindrical ceramic sputtering target manufacturing device (hereinafter also referred to as a cylindrical target manufacturing device) has: a lower holding member that holds (maintains) the lower end of the vertical cylindrical ceramic target and the The lower end of the cylindrical substrate contained in the hollow portion of the cylindrical ceramic target; the target holding member, which holds the upper end of the aforementioned cylindrical ceramic target; the substrate holding member, which holds The upper end of the cylindrical base material; and the connecting member, which connects the lower holding member and the target holding structure The parts and base material holding members are made of titanium or titanium alloy, or molybdenum or molybdenum alloy.

前述圓筒形陶瓷濺鍍靶的製造方法(以下亦稱為圓筒形靶的製造方法)，其係使用前述圓筒形陶瓷濺鍍靶的製造裝置而製造圓筒形陶瓷濺鍍靶的方法，並藉由前述下部保持構件以及靶材保持構件，分別保持前述圓筒形陶瓷靶材的下端部及上端部，藉由前述下部保持構件以及基材保持構件而分別保持前述圓筒形陶瓷靶材的中空部所收容的鈦製或鈦合金製或者鉬製或鉬合金製的前述圓筒形基材的下端部以及上端部，將前述製造裝置、圓筒形陶瓷靶材以及圓筒形基材，加溫至接合前述圓筒形陶瓷靶材與圓筒形基材所使用之焊料的熔點以上之溫度，在前述圓筒形陶瓷靶材與前述圓筒形基材之間所形成的空隙部中，注入已熔解的前述焊料，將前述製造裝置、圓筒形陶瓷靶材、圓筒形基材以及注入至前述空隙部中之焊料冷卻至較前述焊料的熔點低的溫度。 The manufacturing method of the aforementioned cylindrical ceramic sputtering target (hereinafter also referred to as the manufacturing method of the cylindrical target), which is a method of manufacturing a cylindrical ceramic sputtering target using the aforementioned manufacturing apparatus of the cylindrical ceramic sputtering target , And by the lower holding member and the target holding member, the lower end and the upper end of the cylindrical ceramic target are respectively held, and the cylindrical ceramic target is held by the lower holding member and the substrate holding member, respectively The lower end and upper end of the aforementioned cylindrical base material made of titanium or titanium alloy or molybdenum or molybdenum alloy contained in the hollow part of the material are combined with the aforementioned manufacturing device, cylindrical ceramic target material, and cylindrical base The material, heated to a temperature above the melting point of the solder used to join the cylindrical ceramic target material and the cylindrical substrate, and the gap formed between the cylindrical ceramic target material and the cylindrical substrate The molten solder is injected into the portion, and the manufacturing device, the cylindrical ceramic target, the cylindrical base material, and the solder injected into the void portion are cooled to a temperature lower than the melting point of the solder.

以下，參照第5圖來說明前述圓筒形靶的製造裝置以及製造方法。又，本發明的圓筒形靶的製造裝置只要具有上述功能，即不限定為圖中所示的形狀等。 Hereinafter, with reference to FIG. 5, the manufacturing apparatus and manufacturing method of the said cylindrical target are demonstrated. Moreover, as long as the manufacturing apparatus of the cylindrical target of this invention has the said function, it is not limited to the shape etc. shown in a figure.

第5圖是前述圓筒形靶的製造裝置之一的具體例，為製造裝置40的縱向截面圖。第5圖係表示在製造裝置40中安裝有圓筒形基材41以及圓筒形靶材42的狀態 下之製造裝置40。圓筒形靶材42是由3個的圓筒形分割靶材42a所形成。 FIG. 5 is a specific example of one of the manufacturing apparatuses of the aforementioned cylindrical target, and is a longitudinal cross-sectional view of the manufacturing apparatus 40. Fig. 5 shows a state where the cylindrical base material 41 and the cylindrical target material 42 are mounted in the manufacturing apparatus 40 Below the manufacturing device 40. The cylindrical target 42 is formed of three cylindrical divided targets 42a.

製造裝置40，係具有下部保持構件43、靶材保持構件44、基材保持構件45以及連結構件46。 The manufacturing apparatus 40 has a lower holding member 43, a target holding member 44, a base holding member 45, and a connecting member 46.

下部保持構件43，係由：具有將連結構件46裝設的4個裝設孔43e之連結構件裝設部43a、將分割靶材42a以直立的狀態保持之靶材保持部43b、將圓筒形基材41以直立的狀態保持之基材保持部43c以及固定具43d所構成。連結構件裝設部43a、靶材保持部43b及基材保持部43c是環狀，為由外側依此順序形成一體，而例如是鈦製。 The lower holding member 43 is composed of: a connecting member installation portion 43a having four installation holes 43e for installing the connecting member 46, a target holding portion 43b that holds the divided target 42a in an upright state, and a cylindrical The shaped base material 41 is composed of a base material holding portion 43c held in an upright state and a fixture 43d. The connecting member mounting portion 43a, the target holding portion 43b, and the base holding portion 43c are ring-shaped and integrally formed in this order from the outside, and are, for example, made of titanium.

圓筒形靶材42是***到靶材保持部43b，而以在圓筒形靶材42的下端面與靶材保持部43b之間例如夾著鐵氟龍(註冊商標)製的O形環47的狀態下，將圓筒形靶材42安裝在靶材保持部43b。圓筒形基材41是收容在圓筒形靶材42的中空部，而以在圓筒形基材41的下端面與基材保持部43c之間例如夾著鐵氟龍(註冊商標)製的O形環48的狀態下，將圓筒形基材41安裝在基材保持部43c。以如此操作，下部保持構件43是保持著圓筒形靶材42以及圓筒形基材41的下端部。而且，藉由如此操作在下部保持構件43保持著圓筒形靶材42以及圓筒形基材41，而在圓筒形靶材42與圓筒形基材41之間形成空隙部49。 The cylindrical target 42 is inserted into the target holding portion 43b, and an O-ring made of Teflon (registered trademark) is sandwiched between the lower end surface of the cylindrical target 42 and the target holding portion 43b. In the state of 47, the cylindrical target 42 is attached to the target holding portion 43b. The cylindrical base material 41 is housed in the hollow part of the cylindrical target material 42, and is made of, for example, Teflon (registered trademark) sandwiched between the lower end surface of the cylindrical base material 41 and the base material holding portion 43c In the state of the O-ring 48, the cylindrical base 41 is mounted on the base holding portion 43c. In this way, the lower holding member 43 holds the cylindrical target 42 and the lower end of the cylindrical base 41. Then, by holding the cylindrical target 42 and the cylindrical base 41 in the lower holding member 43 in this manner, a gap 49 is formed between the cylindrical target 42 and the cylindrical base 41.

連結構件46是由4根柱狀構件46a所構成。第5圖只圖示有4根之中的2根柱狀構件46a。4根柱狀構 件46a是***到設置在下部保持構件43的裝設孔43e，並藉由螺母等固定具43d固定在下部保持構件43。4根柱狀構件46a中，係裝設有靶材保持構件44以及基材保持構件45。如此之連結構件46，係連結下部保持構件43、靶材保持構件44及基材保持構件45。柱狀構件46a的數目可以是2根或3根，也可以是5根以上。柱狀構件46a的數目愈多，則越可以牢固地連結下部保持構件43、靶材保持構件44及基材保持構件45，而安定製造裝置40。 The connecting member 46 is composed of four columnar members 46a. Fig. 5 shows only two columnar members 46a among the four. 4 columns The piece 46a is inserted into the mounting hole 43e provided in the lower holding member 43, and is fixed to the lower holding member 43 by a fixing tool 43d such as a nut. Among the four columnar members 46a, the target holding member 44 and The base material holding member 45. Such a connecting member 46 connects the lower holding member 43, the target holding member 44, and the base holding member 45. The number of columnar members 46a may be two or three, or five or more. The greater the number of columnar members 46a, the more firmly the lower holding member 43, the target holding member 44, and the base holding member 45 can be connected, and the manufacturing apparatus 40 can be stabilized.

連結構件46的材料是視圓筒形基材的材料而選擇。本發明的圓筒形靶的製造裝置，係視圓筒形基材為鈦製或鈦合金製或者鉬製或鉬合金製的而使用。例如，圓筒形基材為鈦製或是鈦合金製時，連結構件46也是鈦製或是鈦合金製。同樣的，圓筒形基材為鉬製或是鉬合金製時，連結構件46也是鉬製或是鉬合金製。有關鈦合金及鉬合金，是與前述的圓筒形基材之相關說明相同。有關連結構件46為鈦製或鈦合金製或者鉬製或鉬合金製之意義，係陳述於後。 The material of the connecting member 46 is selected according to the material of the cylindrical base material. The manufacturing device of the cylindrical target of the present invention is used depending on whether the cylindrical substrate is made of titanium or titanium alloy, or molybdenum or molybdenum alloy. For example, when the cylindrical base material is made of titanium or titanium alloy, the connecting member 46 is also made of titanium or titanium alloy. Similarly, when the cylindrical base material is made of molybdenum or a molybdenum alloy, the connecting member 46 is also made of molybdenum or a molybdenum alloy. Regarding the titanium alloy and the molybdenum alloy, the description is the same as that of the aforementioned cylindrical base material. The meaning that the connecting member 46 is made of titanium or titanium alloy or molybdenum or molybdenum alloy will be described later.

靶材保持構件44是由連結構件裝設部44a、靶材保持部44b及固定具44c所構成。連結構件裝設部44a及靶材保持部44b是環狀，由外側依此順序形成一體，而例如是鈦製。連結構件裝設部44a是具有4個裝設孔44d，而在各個裝設孔44d***有柱狀構件46a，藉由螺母等固定具44c固定在連結構件46。靶材保持構件44的位置可沿著連結構件46而自由地調整。圓筒形靶材42是***到 靶材保持部44b，而以在圓筒形靶材42的上端面與靶材保持部44b之間例如夾著鐵氟龍(註冊商標)製的O形環50之狀態下，安裝在靶材保持部44b。換言之，靶材保持部44b是以將圓筒形靶材42壓附於其上側之方式而保持。如此操作之靶材保持構件44是保持圓筒形靶材42的上端部。 The target holding member 44 is composed of a connecting member installation portion 44a, a target holding portion 44b, and a fixture 44c. The connecting member mounting portion 44a and the target holding portion 44b are ring-shaped, and are integrally formed in this order from the outside, and are, for example, made of titanium. The connecting member mounting portion 44a has four mounting holes 44d, and a columnar member 46a is inserted into each mounting hole 44d, and is fixed to the connecting member 46 by a fixing tool 44c such as a nut. The position of the target holding member 44 can be adjusted freely along the connecting member 46. The cylindrical target 42 is inserted into The target holding portion 44b is mounted on the target with an O-ring 50 made of Teflon (registered trademark) sandwiched between the upper end surface of the cylindrical target 42 and the target holding portion 44b. Holding part 44b. In other words, the target holding portion 44b is held by pressing the cylindrical target 42 to the upper side thereof. The target holding member 44 thus operated holds the upper end of the cylindrical target 42.

基材保持構件45，係具有連結構件裝設部45a、基材壓附部45b及固定具45c。連結構件裝設部45a係具有4個裝設孔45d。在各裝設孔45d係***有柱狀構件46a，並藉由螺母等固定具45c將基材保持構件45固定在連結構件46。基材保持構件45的位置可沿著連結構件46而自由地調整。基材壓附部45b是設置在連結構件裝設部45a的下側，係圓盤狀，將圓筒形基材41的上端面以由上壓附之方式而保持圓筒形基材41的上端部。在本發明的圓筒形靶的製造裝置中，基材保持構件只要能不偏離地固定圓筒形基材的位置即可，也可以是將圓筒形基材的上端部由其側面來保持的構件。 The base material holding member 45 has a connecting member installation part 45a, a base material pressing part 45b, and a fixture 45c. The connecting member installation portion 45a has four installation holes 45d. A columnar member 46a is inserted into each mounting hole 45d, and the base material holding member 45 is fixed to the connecting member 46 by a fixing tool 45c such as a nut. The position of the substrate holding member 45 can be adjusted freely along the connecting member 46. The base material pressing part 45b is provided on the lower side of the connecting member installation part 45a, and has a disc shape. The upper end surface of the cylindrical base material 41 is pressed from above to hold the cylindrical base material 41 Upper end. In the manufacturing apparatus of the cylindrical target of the present invention, the substrate holding member may be capable of fixing the position of the cylindrical substrate without deviation, or the upper end of the cylindrical substrate may be held by its side surface. The components.

本發明的圓筒形靶是使用製造裝置40，而可藉由例如包括以下的組裝步驟、加溫步驟、焊料注入步驟及冷卻步驟之製造方法而製造。 The cylindrical target of the present invention uses the manufacturing device 40, and can be manufactured by, for example, a manufacturing method including the following assembly steps, heating steps, solder injection steps, and cooling steps.

(組裝步驟) (Assembly steps)

如第5圖所示，在製造裝置40中安裝圓筒形基材41及圓筒形靶材42。首先，將鈦製或鈦合金製或者鉬製或鉬合金製的圓筒形基材41設置在製造裝置40中。有關鈦合金及鉬合金，是與前述圓筒形基材之說明相同。將圓筒形 基材41安裝於例如已裝設有鐵氟龍(註冊商標)製的O形環48的下部保持構件43之基材保持部43c。藉此，可以防止黏接材由在圓筒形基材41與圓筒形靶材42之間所形成的空隙部49下端漏出、及刮傷圓筒形基材41。 As shown in FIG. 5, a cylindrical base material 41 and a cylindrical target material 42 are installed in the manufacturing apparatus 40. First, a cylindrical base material 41 made of titanium or titanium alloy, or molybdenum or molybdenum alloy is set in the manufacturing apparatus 40. Regarding the titanium alloy and the molybdenum alloy, the description is the same as the above-mentioned cylindrical base material. Cylindrical The base material 41 is attached to the base material holding portion 43c of the lower holding member 43 to which an O-ring 48 made of Teflon (registered trademark) has been mounted, for example. This prevents the adhesive material from leaking from the lower end of the gap 49 formed between the cylindrical base material 41 and the cylindrical target material 42 and scratching the cylindrical base material 41.

在圓筒形基材41有翹曲時，會反映在所製造的圓筒形靶之偏心、翹曲等，故圓筒形基材41以在安裝於製造裝置40中之前進行翹曲的確認為佳。在測定圓筒形基材41的翹曲之方法無特別限制，惟可列舉例如下述之方法。將圓筒形基材在第1圖的靶旋轉裝置4上靜置成水平方向。將圓筒形基材的上面對著直邊，使用間隙尺測定圓筒形基材與直邊之間可能的間隙之最大長度，。將最初的測定點當作基準，在圓周方向以45度間隔所決定的共8個的測定點進行前述測定，可以將得到的8個最大長度中之最大值當作圓筒形基材的翹曲。又，也可以使用三次元形狀測定機求出翹曲。前述圓筒形基材41的翹曲以在0.6mm以下為佳，較佳是0.4mm以下，更佳是0.2mm以下，以0mm為最佳。前述圓筒形基材41的翹曲超過0.6mm時，也可以包括圓筒形基材41的翹曲矯正步驟。前述圓筒形基材41的翹曲矯正方法並無特別限制，而有例如使用加壓機進行翹曲矯正的方法。 When the cylindrical substrate 41 has warpage, it will be reflected in the eccentricity, warpage, etc. of the manufactured cylindrical target. Therefore, the cylindrical substrate 41 can be checked for warpage before being installed in the manufacturing device 40 Better. The method of measuring the warpage of the cylindrical base material 41 is not particularly limited, but for example, the following methods can be mentioned. The cylindrical base material is allowed to stand in the horizontal direction on the target rotating device 4 in FIG. 1. Place the upper surface of the cylindrical substrate on the straight side, and use a gap ruler to measure the maximum length of the possible gap between the cylindrical substrate and the straight side. Taking the first measurement point as the reference, the above measurement is performed at a total of 8 measurement points determined at 45-degree intervals in the circumferential direction. The maximum value of the 8 maximum lengths obtained can be regarded as the warpage of the cylindrical substrate. song. In addition, it is also possible to obtain the warpage using a three-dimensional shape measuring machine. The warpage of the cylindrical base material 41 is preferably 0.6 mm or less, preferably 0.4 mm or less, more preferably 0.2 mm or less, and most preferably 0 mm. When the warpage of the cylindrical base material 41 exceeds 0.6 mm, a warpage correction step of the cylindrical base material 41 may be included. The method of correcting the warpage of the cylindrical base material 41 is not particularly limited, and there is a method of correcting the warpage using a pressing machine, for example.

其次，在前述圓筒形基材41的外側安裝圓筒形靶材42。首先，在下部保持構件43的靶材保持部43b中，例如裝設鐵氟龍(註冊商標)製的O形環47，並將分割靶材42a安裝在靶材保持部43b。靶材保持部43b及基材保 持部43c是底面與側面成垂直，而且圓筒形基材41的外徑與基材保持部43c的內徑、分割靶材42a的外徑與靶材保持部43b的內徑幾乎為相同尺寸。換言之，係以成為下部保持構件43是使圓筒形基材41與分割靶材42a直立，且產生圓筒形基材41與分割靶材42a的空隙部49，又，使圓筒形基材41與分割靶材42a的下端部之位移成為0.5mm以下的方式來發揮治具的作用。 Next, a cylindrical target 42 is mounted on the outer side of the cylindrical base 41 described above. First, in the target holding portion 43b of the lower holding member 43, for example, an O-ring 47 made of Teflon (registered trademark) is installed, and the divided target 42a is attached to the target holding portion 43b. The target holding portion 43b and the substrate holding The holding portion 43c has a bottom surface perpendicular to the side surface, and the outer diameter of the cylindrical substrate 41 and the inner diameter of the substrate holding portion 43c, and the outer diameter of the segmented target 42a and the inner diameter of the target holding portion 43b are almost the same size . In other words, to become the lower holding member 43, the cylindrical base material 41 and the divided target 42a are made to stand upright, and the gap 49 between the cylindrical base material 41 and the divided target 42a is generated, and the cylindrical base material 41 and the lower end of the divided target 42a function as a jig so that the displacement becomes 0.5 mm or less.

在安裝於靶材保持部43b之分割靶材42a之上面堆疊另外2個分割靶材42a。將安裝在靶材保持部43b之分割靶材42a當作基準，調整之後所堆疊的分割靶材42a之間的段差。在分割靶材42a間是例如夾著鐵氟龍(註冊商標)製的O形環51。於放置在最上面的分割靶材42a之上裝設例如鐵氟龍(註冊商標)製的O形環50，將最上面的分割靶材42a安裝在靶材保持構件44的靶材保持部44b，藉由靶材保持部44b，將圓筒形靶材42由其上側進行壓附。調整此時之3個分割靶材42a的位置，以使分割靶材42a與圓筒形基材41的偏心變小的方式，例如以使圓筒形靶之前述偏心成為1.0mm以下之方式進行。又，以使分割靶材42a之間的段差變小的方式，例如以變成0.3mm以下之方式進行。以方式藉由靶材保持構件44保持圓筒形靶材42的上端部。 Two other divided targets 42a are stacked on top of the divided target 42a attached to the target holding portion 43b. The divided target 42a attached to the target holding portion 43b is used as a reference, and the step difference between the stacked divided target 42a is adjusted. Between the divided target materials 42a, for example, an O-ring 51 made of Teflon (registered trademark) is sandwiched. An O-ring 50 made of, for example, Teflon (registered trademark) is installed on the uppermost divided target 42a, and the uppermost divided target 42a is mounted on the target holding portion 44b of the target holding member 44 , The cylindrical target 42 is pressed from the upper side by the target holding portion 44b. Adjust the positions of the three divided targets 42a at this time so that the eccentricity between the divided target 42a and the cylindrical base material 41 is reduced, for example, so that the aforementioned eccentricity of the cylindrical target becomes 1.0 mm or less . In addition, it is performed so as to reduce the step difference between the divided target materials 42a, for example, so as to become 0.3 mm or less. The upper end portion of the cylindrical target 42 is held by the target holding member 44 in this manner.

最後，在圓筒形基材41的上端面壓附基材保持構件45的基材壓附部45b。此時，以使圓筒形基材41與圓筒形靶材42的上端部之位移變小的方式，例如調整到 0.5mm以下，較佳是調整到0.3mm以下，更佳是調整到0.1mm以下，又更佳是調整到0mm。以此方式藉由基材保持構件45保持圓筒形基材41的上端部。圓筒形基材41是藉由基材保持構件45而保持時，其上端部是以由圓筒形靶材42的上側開口突出的方式而設計。 Finally, the base material pressing portion 45b of the base material holding member 45 is pressed onto the upper end surface of the cylindrical base material 41. At this time, in order to reduce the displacement of the upper end of the cylindrical base material 41 and the cylindrical target material 42, for example, adjust to 0.5 mm or less, preferably adjusted to 0.3 mm or less, more preferably adjusted to 0.1 mm or less, and even more preferably adjusted to 0 mm. In this way, the upper end portion of the cylindrical base material 41 is held by the base material holding member 45. When the cylindrical base material 41 is held by the base material holding member 45, its upper end is designed so as to protrude from the upper opening of the cylindrical target material 42.

藉由以固定具44C將靶材保持構件44之固定在連結構件46，以固定具45C將基材保持構件45固定在連結構件46，將圓筒形基材44以及圓筒形靶材42確實地固定在製造裝置40。 By fixing the target holding member 44 to the connecting member 46 with a fixture 44C, and fixing the substrate holding member 45 to the connecting member 46 with a fixture 45C, the cylindrical base material 44 and the cylindrical target 42 are securely secured. The ground is fixed to the manufacturing device 40.

(加溫步驟) (Warming step)

將製造裝置40，亦即，將下部保持構件43、靶材保持構件44、基材保持構件45及連結構件46、以及已安裝於製造裝置40中的圓筒形基材41及圓筒形靶材42加溫至接合圓筒形靶材42與圓筒形基材41時所使用的焊料熔點以上之溫度。例如，使用銦焊料來作為焊料時，是加溫至160至250℃。 The manufacturing device 40, that is, the lower holding member 43, the target holding member 44, the substrate holding member 45, and the connecting member 46, and the cylindrical substrate 41 and the cylindrical target installed in the manufacturing device 40 The material 42 is heated to a temperature higher than the melting point of the solder used when joining the cylindrical target material 42 and the cylindrical base material 41. For example, when indium solder is used as the solder, it is heated to 160 to 250°C.

(焊料注入步驟) (Solder injection step)

由靶材保持構件44的上側將已熔解的焊料注入到空隙部49。注入的方法並無特別限制，只要能以熔融焊料充滿空隙部49之方式注入即可。 The molten solder is injected into the cavity 49 from the upper side of the target holding member 44. The method of injection is not particularly limited, as long as the molten solder can be injected in such a way that the voids 49 can be filled.

注入量，係接合圓筒形靶材42與圓筒形基材41的充分之量。 The injection amount is an amount sufficient to join the cylindrical target 42 and the cylindrical base 41.

(冷卻步驟) (Cooling step)

將在製造裝置40、圓筒形基材41、圓筒形靶材42以 及注入至空隙部49之熔解焊料，冷卻至較焊料的熔點低的溫度。例如，使用銦焊料作為焊料時，係冷卻至150℃以下。 The manufacturing device 40, the cylindrical substrate 41, the cylindrical target 42 and the And the molten solder injected into the void 49 is cooled to a temperature lower than the melting point of the solder. For example, when indium solder is used as the solder, it is cooled to 150°C or lower.

藉由以上的操作，將圓筒形基材41與圓筒形靶材42以焊料接合，製造圓筒形靶。所製造的圓筒形靶係由製造裝置40取出，並進一步移除O形環51。夾存O形環51處是成為分割靶材之間的間隙。 Through the above operation, the cylindrical base material 41 and the cylindrical target 42 are joined with solder to manufacture a cylindrical target. The manufactured cylindrical target is taken out by the manufacturing device 40, and the O-ring 51 is further removed. The place where the O-ring 51 is sandwiched is a gap between the divided targets.

上述製造方法中，圓筒形基材41以及圓筒形靶材42是確實地固定在製造裝置40中，藉此可將在接合時可能會產生的圓筒形基材41及圓筒形靶材42之相對位置位移抑制在一定範圍內。 In the above-mentioned manufacturing method, the cylindrical base material 41 and the cylindrical target material 42 are securely fixed in the manufacturing device 40, whereby the cylindrical base material 41 and the cylindrical target material that may be produced during joining can be The relative positional displacement of the material 42 is restrained within a certain range.

但是，由於圓筒形基材以及圓筒形靶材會在加溫步驟中膨脹、在冷卻步驟中收縮，因此僅是將圓筒形基材及圓筒形靶材確實地固定在製造裝置中並無法充分抑制圓筒形基材及圓筒形靶材的相對位置之位移。 However, since the cylindrical substrate and the cylindrical target material expand during the heating step and contract during the cooling step, only the cylindrical substrate and the cylindrical target material are reliably fixed in the manufacturing equipment It cannot sufficiently suppress the displacement of the relative positions of the cylindrical substrate and the cylindrical target.

例如，當連結構件具有與圓筒形基材、圓筒形靶材的差別為大之熱膨脹係數時，就加溫步驟中膨脹的程度以及於冷卻步驟中收縮的程度而言，連結構件與圓筒形基材、圓筒形靶材會大為不同，因此，特別是在將圓筒形基材及圓筒形靶材確實地固定在製造裝置時，在冷卻步驟中會對圓筒形基材產生很大之應力。其結果是，圓筒形基材以及圓筒形靶材會產生相對為大的位置位移，即使於組裝步驟中以使圓筒形基材與圓筒形靶材的偏心、位移變小的方式進行調整，也無法使所製造的圓筒形靶中之圓筒 形基材與圓筒形靶材的前述偏心成為1.0mm以下或使位移成為0.5mm以下。 For example, when the connecting member has a large thermal expansion coefficient that is different from the cylindrical base material and the cylindrical target material, in terms of the degree of expansion in the heating step and the degree of contraction in the cooling step, the connecting member and the circular The cylindrical base material and the cylindrical target material are very different. Therefore, especially when the cylindrical base material and the cylindrical target material are securely fixed to the manufacturing device, the cylindrical base material is affected during the cooling step. The material produces great stress. As a result, the cylindrical base material and the cylindrical target material will have a relatively large positional displacement, even if the eccentricity and displacement of the cylindrical base material and the cylindrical target material are reduced during the assembly step. Adjustments can not make the cylinder in the manufactured cylindrical target The aforementioned eccentricity of the circular base material and the cylindrical target material is 1.0 mm or less or the displacement is 0.5 mm or less.

而且，分割靶材彼此間也會產生相對大的位置位移，即使於組裝步驟中以使分割靶材之間的段差成為0.3mm以下之方式進行調整，也無法使所製造的圓筒形靶中之分割靶材之間的段差維持在0.3mm以下。又且，亦會在所製造的圓筒形靶產生破裂或翹曲。 In addition, the divided targets will also have a relatively large positional displacement. Even if the adjustment is performed in the assembly step so that the step difference between the divided targets becomes 0.3 mm or less, the manufactured cylindrical target The step difference between the divided targets is maintained below 0.3mm. In addition, cracks or warpage may occur in the manufactured cylindrical target.

例如，連結構件是以SUS製時，由於鈦製或鈦合金製或者鉬製或鉬合金製之圓筒形基材及陶瓷製之圓筒形靶材與連結構件之熱膨脹係數有很大之不同，故如上述，係無法使圓筒形基材與圓筒形靶材的前述偏心成為1.0mm以下、使位移成為0.5mm以下，也無法使分割靶材間之段差成為0.3mm以下。 For example, when the connecting member is made of SUS, the thermal expansion coefficients of the cylindrical substrate made of titanium or titanium alloy or molybdenum or molybdenum alloy and the cylindrical target material made of ceramic are very different from that of the connecting member. Therefore, as described above, the eccentricity between the cylindrical base material and the cylindrical target cannot be 1.0 mm or less, the displacement can be 0.5 mm or less, and the step difference between the divided targets cannot be 0.3 mm or less.

製造裝置40中，連結構件46是鈦製或鈦合金製或者鉬製或鉬合金製。使用上述製造方法的圓筒形基材41也是鈦製或鈦合金製或者鉬製或鉬合金製。 In the manufacturing apparatus 40, the connecting member 46 is made of titanium, titanium alloy, or molybdenum or molybdenum alloy. The cylindrical base material 41 using the above-mentioned manufacturing method is also made of titanium, titanium alloy, or molybdenum or molybdenum alloy.

連結構件46，在圓筒形基材41為鈦製或鈦合金製時是鈦製或是鈦合金製，在圓筒形基材41為鉬製或鉬合金製時是鉬製或是鉬合金製。因此，連結構件46的熱膨脹係數是與圓筒形基材41的熱膨脹係數相等或是近似。 The connecting member 46 is made of titanium or titanium alloy when the cylindrical base material 41 is made of titanium or titanium alloy, and is made of molybdenum or molybdenum alloy when the cylindrical base material 41 is made of molybdenum or molybdenum alloy. system. Therefore, the thermal expansion coefficient of the connecting member 46 is equal to or approximate to the thermal expansion coefficient of the cylindrical base material 41.

又，因為陶瓷的熱膨脹係數與鈦或是鈦合金、或者鉬或是鉬合金的熱膨脹係數近似，故圓筒形靶材42的熱膨脹係數是與連結構件46以及圓筒形基材41的熱膨脹係數近似。 In addition, since the thermal expansion coefficient of ceramic is similar to that of titanium or titanium alloy, or molybdenum or molybdenum alloy, the thermal expansion coefficient of the cylindrical target 42 is the same as the thermal expansion coefficient of the connecting member 46 and the cylindrical base 41 approximate.

因此，使用製造裝置40之上述製造方法中，就於加溫步驟中膨脹的程度以及於冷卻步驟中收縮的程度而言在連結構件46、圓筒形基材41以及圓筒形靶材42差異並不大，故即使將圓筒形基材以及圓筒形靶材確實地固定在製造裝置中時，在冷卻步驟也不會對圓筒形基材產生大的應力。結果，圓筒形基材41以及圓筒形靶材42不會產生相對大之位置位移，只要在組裝步驟中以使圓筒形基材41與圓筒形靶材42的偏心、位移變小的方式進行調整，則在所製造的圓筒形靶中之偏心、位移也會變小。因此，於組裝步驟中藉由適當地調整圓筒形基材41與圓筒形靶材42的位置關係，可以得到前述偏心是1.0mm以下、前述位移是0.5mm以下之圓筒形靶。 Therefore, in the above-mentioned manufacturing method using the manufacturing apparatus 40, the degree of expansion in the heating step and the degree of contraction in the cooling step are different in the connecting member 46, the cylindrical base material 41, and the cylindrical target 42 It is not large, so even when the cylindrical base material and the cylindrical target material are securely fixed in the manufacturing device, the cylindrical base material does not generate a large stress in the cooling step. As a result, the cylindrical base material 41 and the cylindrical target material 42 will not have a relatively large positional displacement, as long as the eccentricity and displacement of the cylindrical base material 41 and the cylindrical target material 42 are reduced in the assembly step. The eccentricity and displacement in the manufactured cylindrical target will also become smaller. Therefore, by appropriately adjusting the positional relationship between the cylindrical base 41 and the cylindrical target 42 in the assembly step, a cylindrical target with the aforementioned eccentricity of 1.0 mm or less and the aforementioned displacement of 0.5 mm or less can be obtained.

而且，在分割靶材42a彼此間也不會產生相對大的段差，只要在組裝步驟中以使分割靶材42a之間的段差成為0.3mm以下之方式調整，則在所製造的圓筒形靶中分割靶材42a之間的段差也可以在0.3mm以下。再者，亦可以防止在所製造的圓筒形靶產生破裂、翹曲。 Moreover, there is no relatively large step difference between the divided target materials 42a. As long as the step difference between the divided target materials 42a is adjusted to 0.3 mm or less in the assembly step, the manufactured cylindrical target The step difference between the middle divided target materials 42a may be 0.3 mm or less. Furthermore, it is also possible to prevent the occurrence of cracks and warpage in the manufactured cylindrical target.

[實施例] [Example]

對於實施例以及比較例所製造的ITO圓筒形濺鍍靶進行以下的測定以及評估。 The following measurements and evaluations were performed on the ITO cylindrical sputtering targets manufactured in the examples and comparative examples.

(圓筒形靶的偏心之測定) (Measurement of eccentricity of cylindrical target)

在第1圖表示之靶旋轉裝置4上，將圓筒形靶放置成水平方向。將旋轉具5a及5b對接在圓筒形基材之支點7a以及7b以成為在由圓筒形靶材的兩端分別往外側算起 15mm的位置之方式而調整。 On the target rotating device 4 shown in Fig. 1, the cylindrical target is placed in a horizontal direction. Connect the rotating tools 5a and 5b to the fulcrums 7a and 7b of the cylindrical base material so as to start from both ends of the cylindrical target material to the outside. It can be adjusted by 15mm position.

此時，調查圓筒形基材的正圓度和旋轉裝置4的平行度。將度盤規對著由圓筒形靶材的兩端分別往外側算起15mm位置的圓筒形基材外周面，驅動靶旋轉裝置4，使圓筒形靶旋轉1圈。連續測定此時的度盤規之計測值，測定此計測值的最大值與最小值之差。對於實施例以及比較例所製造的全部ITO圓筒形濺鍍靶進行前述測定，確認到任一者之最大值與最小值的差皆於0.2mm以下。 At this time, the roundness of the cylindrical base material and the parallelism of the rotating device 4 were investigated. The dial gauge is opposed to the outer peripheral surface of the cylindrical base material 15 mm from both ends of the cylindrical target, and the target rotating device 4 is driven to rotate the cylindrical target one turn. Continuously measure the measured value of the dial gauge at this time, and measure the difference between the maximum value and the minimum value of this measured value. The aforementioned measurement was performed on all the ITO cylindrical sputtering targets manufactured in the Examples and Comparative Examples, and it was confirmed that the difference between the maximum value and the minimum value of any one of them was less than 0.2 mm.

對於1個分割靶材，係將度盤規對著其外表面之由一端往內側算起7mm的位置，驅動靶旋轉裝置4，將圓筒形靶旋轉1圈。連續測定此時的度盤規之計測值，以該計測值的最大值與最小值之差算出偏心。同樣的，將度盤規對著此分割靶材的另一端往內側算起7mm的位置，驅動靶旋轉裝置4，將圓筒形靶1旋轉1圈，同樣地算出偏心。對全部的分割靶材進行同樣的操作，算出於各者的兩端部之偏心。 For one segmented target, the dial gauge is facing the outer surface at a position 7 mm from one end to the inside, and the target rotating device 4 is driven to rotate the cylindrical target one turn. The measured value of the dial gauge at this time is continuously measured, and the eccentricity is calculated from the difference between the maximum value and the minimum value of the measured value. Similarly, the dial gauge is positioned 7 mm inward from the other end of the divided target, and the target rotating device 4 is driven to rotate the cylindrical target 1 once, and the eccentricity is calculated similarly. The same operation is performed on all the divided targets, and the eccentricity of the two ends of each is calculated.

(圓筒形基材與圓筒形靶材的位移之測定) (Measurement of displacement between cylindrical substrate and cylindrical target)

以下述之方式，測定圓筒形基材與圓筒形靶材的位移。 In the following manner, the displacement of the cylindrical substrate and the cylindrical target was measured.

將ITO圓筒形濺鍍靶靜置在平台上，如第6圖所示，在連結1端面的圓筒形靶材之外周線(圓)上2點的線段之中，將在具有最大長度(前述圓的直徑)的線段L上之圓筒形靶材與焊料層的積層部2處之長度(第6圖所示之AB間的長度及CD間的長度)藉由深度規(depth gauge)來測定，並求出這2個測定值的差d(第6圖之(CD間的長 度)-(AB間的長度))。線段L之中，求出在賦與最大差d的線段L中所得到之差d除以2之值X。在另一端面中，也同樣地求出最大值X。將在兩端面求得的2個X中較大者之數值，當作於該ITO圓筒形濺鍍靶中之圓筒形基材與圓筒形靶材的位移。又，第6圖與第4圖為相同之圖。 Place the ITO cylindrical sputtering target on the platform, as shown in Figure 6, among the two points on the outer circumference (circle) of the cylindrical target connecting the end faces of the cylindrical target, the maximum length will be (The diameter of the aforementioned circle) The length of the stack of the cylindrical target material and the solder layer on the line segment L at 2 (the length between AB and the length between CD shown in Figure 6) is determined by the depth gauge ) To measure, and find the difference d between these two measured values (Figure 6 (length between CD) Degree)-(length between AB)). In the line segment L, the value X obtained by dividing the difference d by 2 in the line segment L to which the maximum difference d is given is obtained. In the other end surface, the maximum value X is similarly obtained. The larger value of the two Xs obtained on both end surfaces is regarded as the displacement of the cylindrical substrate and the cylindrical target in the ITO cylindrical sputtering target. In addition, Fig. 6 and Fig. 4 are the same.

(分割靶材之間的段差之測定) (Measurement of the step difference between the segmented targets)

有關相鄰的分割靶材之段差，係將此等分割靶材的鄰接端面間之高低差以深度規測定在圓周方向為等間隔的8處，並將此差的最大值作為段差。 Regarding the step difference between adjacent divided targets, the height difference between the adjacent end faces of the divided targets is measured at 8 equal intervals in the circumferential direction with a depth gauge, and the maximum value of this difference is regarded as the step difference.

(圓筒形濺鍍靶的翹曲之測定) (Measurement of warpage of cylindrical sputtering target)

在第1圖的靶旋轉裝置4上，將ITO圓筒形濺鍍靶靜置成水平方向。在此，將接合在圓筒形基材之圓筒形靶材的外周面對著直邊，用間隙尺測定圓筒形靶材與直邊之間可能的間隙。在圓周方向為等間隔之8處進行前述測定，將間隙的最大值當作ITO圓筒形濺鍍靶的翹曲。 On the target rotating device 4 of FIG. 1, the ITO cylindrical sputtering target was left to stand in the horizontal direction. Here, the outer circumference of the cylindrical target joined to the cylindrical base is facing the straight side, and the possible gap between the cylindrical target and the straight side is measured with a gap ruler. The aforementioned measurement was performed at 8 locations at equal intervals in the circumferential direction, and the maximum value of the gap was regarded as the warpage of the ITO cylindrical sputtering target.

(接合時產生破裂之分割靶材的個數之測定) (Measurement of the number of divided targets that are broken during joining)

藉由目視觀察ITO圓筒形濺鍍靶的圓筒形靶材，計測9個分割靶材之中產生破裂之分割靶材的個數。 By visually observing the cylindrical target material of the ITO cylindrical sputtering target, the number of divided target materials that had cracks among the 9 divided target materials was counted.

(濺鍍時的侵蝕評估) (Erosion evaluation during sputtering)

使用所製造之ITO圓筒形濺鍍靶在以下之條件中進行濺鍍。藉由目視來觀察進行濺鍍後的圓筒形靶材之侵蝕狀態。 Sputtering was performed under the following conditions using the manufactured ITO cylindrical sputtering target. Visually observe the erosion state of the cylindrical target after sputtering.

<濺鍍條件> <sputtering conditions>

基板溫度 100℃ Substrate temperature 100℃

濺鍍壓力 0.2Pa Sputtering pressure 0.2Pa

電力 20KW Electricity 20KW

靶旋轉數 10rpm Target rotation number 10rpm

(因濺鍍產生破裂之分割靶材的個數之測定) (Measurement of the number of divided targets that are broken due to sputtering)

在前述濺鍍後，藉由目視觀察ITO圓筒形濺鍍靶的圓筒形靶材，計算9個分割靶材之中產生破裂的分割靶材之個數。 After the aforementioned sputtering, by visually observing the cylindrical target material of the ITO cylindrical sputtering target, the number of divided target materials that had cracks among the 9 divided target materials was counted.

[實施例1] [Example 1]

使用第5圖所示之製造裝置40，如以下的方式製造ITO圓筒形濺鍍靶。 Using the manufacturing apparatus 40 shown in FIG. 5, an ITO cylindrical sputtering target was manufactured in the following manner.

準備9個外徑153.0mm、內徑135.0mm、長度300.0mm的ITO圓筒形分割靶材，將圓筒形分割靶材的外周面以耐熱性膜與膠帶遮蔽，在接合面(內周面)使用超音波焊接工具將銦焊料進行底塗。 Prepare 9 ITO cylindrical split targets with an outer diameter of 153.0mm, an inner diameter of 135.0mm, and a length of 300.0mm. The outer peripheral surface of the cylindrical split target is covered with a heat-resistant film and tape, and the joint surface (inner peripheral surface) ) Use an ultrasonic soldering tool to prime indium solder.

在外徑133.0mm、內徑125.0mm、長度3000.0mm的鈦製圓筒形基材之接合面(外周面)上也使用超音波焊接工具將銦焊料進行底塗。將前述圓筒形基材安裝在裝設有鐵氟龍(註冊商標)製O形環48之基材保持部43c。其次，在靶材保持部43b裝設鐵氟龍(註冊商標)製O形環47，將1個前述圓筒形分割靶材安裝在靶材保持部43b上。此時，藉由下部保持構件43，將前述圓筒形基材下端部與前述圓筒形分割靶材下端部的位移以成為0.1mm的方式進行調整。又，在前述圓筒形基材與前述圓筒形分割靶 材之間形成空隙部49。 The joint surface (outer peripheral surface) of a cylindrical titanium substrate with an outer diameter of 133.0 mm, an inner diameter of 125.0 mm, and a length of 3000.0 mm was also primed with indium solder using an ultrasonic welding tool. The aforementioned cylindrical base material is mounted on the base material holding portion 43c equipped with an O-ring 48 made of Teflon (registered trademark). Next, an O-ring 47 made of Teflon (registered trademark) is attached to the target holding portion 43b, and one of the aforementioned cylindrical divided targets is attached to the target holding portion 43b. At this time, by the lower holding member 43, the displacement of the lower end of the cylindrical base material and the lower end of the cylindrical divided target was adjusted so as to be 0.1 mm. In addition, the cylindrical base material and the cylindrical dividing target A gap 49 is formed between the materials.

又，在前述圓筒形分割靶材之上堆疊其餘的8個圓筒形分割靶材。使圓筒形分割靶材之間夾著厚度0.5mm的鐵氟龍(註冊商標)製O形環51。在放置於最上面的圓筒形分割靶材之上裝設O形環50，將最上面的圓筒形分割靶材安裝在靶材保持部44b，藉由靶材保持部44b將圓筒形靶材由其上側壓附。此時，調整9個圓筒形分割靶材的位置，並使圓筒形分割靶材之間的全部段差成為0.2mm以下。以此方式，藉由靶材保持構件44保持圓筒形靶材的上端部。 In addition, the remaining 8 cylindrical divided targets are stacked on the aforementioned cylindrical divided target. An O-ring 51 made of Teflon (registered trademark) with a thickness of 0.5 mm was sandwiched between the cylindrical divided target materials. An O-ring 50 is installed on the uppermost cylindrical divided target material, and the uppermost cylindrical divided target material is installed on the target holding part 44b. The cylindrical shaped target holding part 44b The target is pressed by its upper side. At this time, adjust the positions of the nine cylindrically divided targets so that all the steps between the cylindrically divided targets are 0.2 mm or less. In this way, the upper end of the cylindrical target is held by the target holding member 44.

其次，在圓筒形基材的上端部壓附基材壓附部45b，並藉由基材保持構件45保持圓筒形基材的上端部。此時，以使圓筒形基材上端部與圓筒形靶材上端部的位移成為0.1mm以下的方式，以深度規測定圓筒形靶材的表面與圓筒形基材表面的距離，同時調整治具的位置。 Next, the substrate pressing portion 45b is press-attached to the upper end of the cylindrical substrate, and the upper end of the cylindrical substrate is held by the substrate holding member 45. At this time, the distance between the surface of the cylindrical target and the surface of the cylindrical substrate is measured with a depth gauge so that the displacement between the upper end of the cylindrical substrate and the upper end of the cylindrical target becomes 0.1 mm or less. At the same time adjust the position of the fixture.

最後以固定具43d固定下部保持構件43，以固定具44c固定靶材保持構件44，以固定具45c固定基材保持構件45，將保持構件43至45固定在鈦製的連結構件46，藉此將圓筒形基材以及圓筒形靶材確實地固定在製造裝置40中。 Finally, the lower holding member 43 is fixed with the fixture 43d, the target holding member 44 is fixed with the fixture 44c, the substrate holding member 45 is fixed with the fixture 45c, and the holding members 43 to 45 are fixed to the connecting member 46 made of titanium, thereby The cylindrical base material and the cylindrical target are securely fixed in the manufacturing device 40.

將製造裝置40、圓筒形基材及圓筒形靶材加溫至180℃。 The manufacturing device 40, the cylindrical base material, and the cylindrical target are heated to 180°C.

由靶材保持構件44的上側，將用以接合圓筒形靶材與圓筒形基材的足夠量之經熔解的銦焊料注入至空 隙部49中。 From the upper side of the target holding member 44, a sufficient amount of molten indium solder for joining the cylindrical target and the cylindrical base material is injected into the void In the gap 49.

將製造裝置40、圓筒形基材、圓筒形靶材以及注入到空隙部49的經熔解之焊料冷卻至140℃。 The manufacturing apparatus 40, the cylindrical base material, the cylindrical target material, and the melted solder injected into the cavity 49 are cooled to 140°C.

確認到銦焊料固化之後，將所製造的ITO圓筒形濺鍍靶由製造裝置40取出，除去O形環，並刮出殘存在圓筒形分割靶材之間之銦焊料。 After confirming that the indium solder is solidified, the manufactured ITO cylindrical sputtering target is taken out from the manufacturing device 40, the O-ring is removed, and the indium solder remaining between the cylindrical divided targets is scraped out.

將對於所製造的ITO圓筒形濺鍍靶進行之上述偏心測定、位移測定、段差測定、翹曲測定以及產生破裂之分割靶材的個數測定之結果表示在表1中。將表示濺鍍結束時的侵蝕狀態之照片表示在第8圖。由第8圖可知，在實施例1的圓筒形靶中，並沒有看到因圓筒形靶材的局部侵蝕所造成之基材的露出。 Table 1 shows the results of the above-mentioned eccentricity measurement, displacement measurement, step measurement, warpage measurement, and measurement of the number of split targets that have cracked on the manufactured ITO cylindrical sputtering target. A photograph showing the corrosion state at the end of sputtering is shown in Fig. 8. It can be seen from Fig. 8 that in the cylindrical target of Example 1, the exposure of the base material caused by the local erosion of the cylindrical target is not seen.

表1中所示之偏心，係在各測定點中所算出的全部偏心之中的最大值。 The eccentricity shown in Table 1 is the maximum value among all eccentricities calculated at each measurement point.

在表1的「段差」中表示為「X至Y」者，係表示所測定之8個段差的最小值為X，最大值為Y。例如「0.10至0.20」是表示，在所測定的8個段差之中，最小值是0.10mm，最大值是0.20mm之意。 In the "level difference" of Table 1, those represented as "X to Y" means that the minimum value of the 8 measured levels is X and the maximum value is Y. For example, "0.10 to 0.20" means that among the 8 measured steps, the minimum value is 0.10mm and the maximum value is 0.20mm.

[實施例2] [Example 2]

除了使用連結構件46為鈦合金(Ti-6AL-4V ASTM規格Gr.5)製的製造裝置40之外，其餘的是藉由與實施例1同樣的操作而製造ITO圓筒形濺鍍靶。 Except that the connecting member 46 is a manufacturing device 40 made of a titanium alloy (Ti-6AL-4V ASTM standard Gr. 5), the rest is the same operation as in Example 1 to manufacture an ITO cylindrical sputtering target.

將對於所製造的ITO圓筒形濺鍍靶進行的上述偏心測定、位移測定、段差測定、翹曲測定以及產生 破裂之分割靶材的個數測定之結果表示在表1中。對於濺鍍結束時的侵蝕狀態，係與第8圖所示之照片為相同的結果。 The above-mentioned eccentricity measurement, displacement measurement, step measurement, warpage measurement and generation of the manufactured ITO cylindrical sputtering target The results of the measurement of the number of broken divided targets are shown in Table 1. The corrosion state at the end of sputtering is the same result as the photo shown in Figure 8.

[實施例3] [Example 3]

除了採用圓筒形基材是鉬製、以及連結構件46是鉬製的製造裝置40之外，其餘的是藉由與實施例1相同的操作而製造ITO圓筒形濺鍍靶。 Except that the cylindrical base material is made of molybdenum and the connecting member 46 is made of molybdenum, the manufacturing apparatus 40 is used, and the rest is the same operation as in Example 1 to manufacture an ITO cylindrical sputtering target.

將對於所製造的ITO圓筒形濺鍍靶進行之上述偏心測定、位移測定、段差測定、翹曲測定及產生破裂的分割靶材個數之測定之結果表示在表1中。有關濺鍍結束時的侵蝕狀態，係與第8圖所示照片有相同的結果。 Table 1 shows the results of the above-mentioned eccentricity measurement, displacement measurement, step measurement, warpage measurement, and measurement of the number of split targets with cracks on the manufactured ITO cylindrical sputtering target. Regarding the erosion state at the end of sputtering, the result is the same as the photo shown in Figure 8.

[比較例1] [Comparative Example 1]

除了是使用只有連結構件是SUS 304製之點與製造裝置40不同的製造裝置之外，其餘的是藉由與實施例1相同的操作而製造ITO圓筒形濺鍍靶。 The ITO cylindrical sputtering target was manufactured by the same operation as in Example 1, except that a manufacturing device that differs from the manufacturing device 40 in that only the connecting member is made of SUS 304 was used.

將對於所製造之ITO圓筒形濺鍍靶進行上述之偏心測定、位移測定、段差測定、翹曲測定以及濺鍍後產生破裂之分割靶材的個數測定，將結果表示在表1中。將顯示濺鍍結束時的侵蝕狀態照片表示在第9圖中。在第9圖的上部之橫向長形發白處所示部分(在第9圖中標記之箭頭所示之部分)，係因濺鍍而圓筒形靶材之下的圓筒形基材露出之部分。亦即，於比較例1的圓筒形靶，圓筒形靶材無法被均勻地濺鍍，在圓筒形靶材會產生局部性侵蝕。 For the manufactured ITO cylindrical sputtering target, the above-mentioned eccentricity measurement, displacement measurement, step measurement, warpage measurement, and measurement of the number of divided targets that cracked after sputtering were performed, and the results are shown in Table 1. The photograph showing the erosion state at the end of sputtering is shown in Figure 9. The part shown in the horizontally elongated white area at the upper part of Fig. 9 (the part indicated by the arrow marked in Fig. 9) is due to sputtering and the cylindrical substrate under the cylindrical target is exposed The part. That is, in the cylindrical target of Comparative Example 1, the cylindrical target cannot be sputtered uniformly, and local erosion occurs on the cylindrical target.

[比較例2] [Comparative Example 2]

使用在第7圖所示之製造裝置60來製造ITO圓筒形濺鍍靶。製造裝置60，係在連結構件為SUS304製之點、不具基材保持構件45之點以及具有4個的圓筒形靶材壓附構件62之點而與製造裝置40不同。圓筒形靶材壓附構件62，係個別設置在4根柱狀構件46a。圓筒形靶材壓附構件62，係由結合在柱狀構件46a之結合部62a以及壓附圓筒形靶材之壓附部62b所構成。壓附部62b是棒狀，係橫跨圓筒形分割靶材間全部的分割部而由側面壓附圓筒形靶材，具有抑制圓筒形靶材的側面方向之移動的功能。 The manufacturing apparatus 60 shown in FIG. 7 was used to manufacture an ITO cylindrical sputtering target. The manufacturing apparatus 60 is different from the manufacturing apparatus 40 in that the connecting member is made of SUS304, the base material holding member 45 is not provided, and the four cylindrical target pressing members 62 are provided. The cylindrical target pressing members 62 are individually provided on the four columnar members 46a. The cylindrical target pressing member 62 is composed of a connecting portion 62a connected to the columnar member 46a and a pressing portion 62b for pressing the cylindrical target. The pressing portion 62b is in the shape of a rod, and presses the cylindrical target from the side across all the divided portions between the cylindrical divided targets, and has a function of suppressing the movement of the cylindrical target in the lateral direction.

除了不藉由基材保持構件45保持圓筒形基材以及藉由圓筒形靶材壓附構件62壓附圓筒形靶材之外，其餘係藉由與實施例1相同的操作而製造ITO圓筒形濺鍍靶。 Except that the cylindrical substrate is not held by the substrate holding member 45 and the cylindrical target is pressed by the cylindrical target pressing member 62, the rest is manufactured by the same operation as in Example 1. ITO cylindrical sputtering target.

將對於所製造的ITO圓筒形濺鍍靶進行上述偏心測定、位移測定、段差測定、翹曲測定以及產生破裂之分割靶材的個數之測定之結果表示在表1。對於濺鍍結束時的侵蝕狀態，係與第9圖表示之照片有相同的結果。 Table 1 shows the results of the above-mentioned eccentricity measurement, displacement measurement, step measurement, warpage measurement, and measurement of the number of split targets with cracks on the manufactured ITO cylindrical sputtering target. Regarding the erosion state at the end of sputtering, the result is the same as the photo shown in Figure 9.

Figure 104129904-A0202-12-0034-1
Figure 104129904-A0202-12-0034-1

實施例及比較例中，雖然於圓筒形靶製造時各分割圓筒形靶材及圓筒形基材的位置關係都經同樣地方式調整，但實施例1至3所得到的ITO圓筒形濺鍍靶，就偏心、圓筒形基材與圓筒形靶材的位移以及分割靶材之間的段差而言，係較比較例1及2所得到的ITO圓筒形濺鍍靶小，就ITO圓筒形濺鍍靶的翹曲而言，也較比較例1所得到的ITO圓筒形濺鍍靶小。而且，濺鍍後的分割圓筒形靶材的產生破裂數也較比較例1所得到的ITO圓筒形濺鍍靶少。 In the examples and comparative examples, although the positional relationship between the divided cylindrical target material and the cylindrical substrate was adjusted in the same manner during the manufacture of the cylindrical target, the ITO cylinders obtained in Examples 1 to 3 -Shaped sputtering target, in terms of eccentricity, the displacement of the cylindrical substrate and the cylindrical target, and the step difference between the divided targets, it is smaller than the ITO cylindrical sputtering target obtained in Comparative Examples 1 and 2. The warpage of the ITO cylindrical sputtering target is also smaller than that of the ITO cylindrical sputtering target obtained in Comparative Example 1. In addition, the number of split cylindrical targets after sputtering was also less than that of the ITO cylindrical sputtering target obtained in Comparative Example 1.

咸認此係因為，在實施例1中，是使用與圓筒形基材相同的素材、且具有與陶瓷靶材相近的熱膨脹係數之鈦製連結構件之製造裝置來製造圓筒形靶；在實施例2中，是使用具有與圓筒形基材類似的素材、且具有與陶瓷靶材相近的熱膨脹係數之鈦合金製連結構件之製造裝置來製造圓筒形靶；在實施例3中，是使用與圓筒形基材相 同的素材、且具有與陶瓷靶材相近的熱膨脹係數之鉬製連結構件之製造裝置來製造圓筒形靶；藉此，使於製造中產生的圓筒形靶材、圓筒形基材及連結構件的熱膨脹以及收縮之程度近似，減輕了施加在圓筒形基材或圓筒形靶材之應力之故。 It is believed that this is because, in Example 1, the cylindrical target was manufactured using the same material as the cylindrical substrate and the manufacturing device of the titanium connecting member with the thermal expansion coefficient similar to that of the ceramic target; In Example 2, a manufacturing device of a titanium alloy connecting member having a material similar to a cylindrical base material and a thermal expansion coefficient similar to that of a ceramic target was used to manufacture a cylindrical target; in Example 3, Is the same as the cylindrical substrate The manufacturing device of the molybdenum connecting member with the same material and the thermal expansion coefficient similar to that of the ceramic target is used to manufacture the cylindrical target; thereby, the cylindrical target, the cylindrical substrate and the The degree of thermal expansion and contraction of the connecting member is similar, which reduces the stress applied to the cylindrical substrate or cylindrical target.

相對於此，比較例1中，咸認由於係使用具有熱膨脹係數與圓筒形基材及陶瓷靶材大為不同的SUS製連結構件之製造裝置來製造圓筒形靶，因此在製造中產生的圓筒形靶材、圓筒形基材及連結構件的熱膨脹以及收縮之程度會大為不同，其結果是在連結構件中會產生收縮應力，此應力主要是施加在圓筒形基材而使圓筒形基材有大的翹曲，因此，偏心、段差以及翹曲會變大。而且，咸認亦會對圓筒形靶材施加應力，且由於濺鍍，厚度會連帶的變薄並強烈的承受前述殘留應力，而使分割靶材會在濺鍍中產生破裂。 On the other hand, in Comparative Example 1, it is believed that the cylindrical target was produced by using a manufacturing device having a thermal expansion coefficient of a SUS-made connecting member that is significantly different from that of the cylindrical base material and the ceramic target. The degree of thermal expansion and contraction of the cylindrical target material, cylindrical base material, and the connecting member will be greatly different. As a result, shrinkage stress will be generated in the connecting member. This stress is mainly applied to the cylindrical base material. The cylindrical base material has a large warpage, so the eccentricity, step difference and warpage will increase. Moreover, Xianzhen also exerts stress on the cylindrical target material, and due to the sputtering, the thickness will be thinned and the residual stress will be strongly endured, so that the split target material will be broken during the sputtering.

在比較例2，係使用由比較例1使用之製造裝置取出基材保持構件45、並添附圓筒形靶材壓附構件之製造裝置來製造圓筒形靶。咸認在此裝置中，由於沒有基材保持構件45，因此會在冷卻銦焊料時在圓筒形基材上部與圓筒形濺鍍靶材上部產生位移、偏心。 In Comparative Example 2, the manufacturing apparatus used in Comparative Example 1 took out the substrate holding member 45 and attached the cylindrical target pressing member to manufacture the cylindrical target. It is believed that in this device, since there is no substrate holding member 45, the upper part of the cylindrical substrate and the upper part of the cylindrical sputtering target will be displaced or decentered when the indium solder is cooled.

使用上述圓筒形靶進行濺鍍時，實施例1至3所得到的ITO圓筒形濺鍍靶，係如第8圖所示，可以進行濺鍍直到使用壽命結束為止，且可形成均質的薄膜。另一方面，比較例1及2所得到的ITO圓筒形濺鍍靶，係 會如第9圖所示般產生過度濺鍍處(第9圖標記之箭頭所示的部分)，無法進行濺鍍直到使用壽命結束為止，且未能形成均質的薄膜。 When the above cylindrical target is used for sputtering, the ITO cylindrical sputtering target obtained in Examples 1 to 3 is shown in Figure 8. It can be sputtered until the end of its service life and can form a homogeneous film. On the other hand, the ITO cylindrical sputtering targets obtained in Comparative Examples 1 and 2 are Excessive sputtering occurs as shown in Fig. 9 (the part indicated by the arrow marked in Fig. 9), sputtering cannot be performed until the end of the service life, and a homogeneous film cannot be formed.

1‧‧‧圓筒形靶 1‧‧‧Cylindrical target

2‧‧‧圓筒形基材 2‧‧‧Cylindrical substrate

3‧‧‧圓筒形靶材 3‧‧‧Cylindrical target

4‧‧‧靶旋轉裝置 4‧‧‧Target rotating device

5a、5b‧‧‧旋轉具 5a、5b‧‧‧Rotating tool

6a、6b‧‧‧端面 6a, 6b‧‧‧end face

7a、7b‧‧‧支點 7a, 7b‧‧‧ pivot

Claims (12)

一種圓筒形陶瓷濺鍍靶，其係具備圓筒形基材、圓筒形陶瓷靶材以及接合前述圓筒形基材與圓筒形陶瓷靶材之焊料者，其中，將度盤規對著前述圓筒形陶瓷靶材的外表面之由該圓筒形陶瓷靶材的兩端分別往內側算起7mm的位置，將於前述圓筒形基材的外周面之由前述圓筒形陶瓷靶材的兩端分別往外側算起15mm的位置當作支點，使前述圓筒形陶瓷濺鍍靶旋轉1圈並測定前述度盤規的計測值時，前述度盤規計測值的最大值與最小值之差，在任一測定點皆於1.0mm以下。 A cylindrical ceramic sputtering target, which is provided with a cylindrical substrate, a cylindrical ceramic target, and solder that joins the cylindrical substrate and the cylindrical ceramic target, wherein the dial gauge is aligned On the outer surface of the cylindrical ceramic target material, at a position 7 mm from both ends of the cylindrical ceramic target material to the inner side, the outer peripheral surface of the cylindrical substrate is covered by the cylindrical ceramic When the two ends of the target are 15mm from the outer side as the fulcrum, the cylindrical ceramic sputtering target is rotated one revolution and the measurement value of the dial gauge is measured. The maximum value of the measurement value of the dial gauge and The difference between the minimum values is less than 1.0mm at any measurement point. 如申請專利範圍第1項所述之圓筒形陶瓷濺鍍靶，其中，翹曲為0.6mm以下。 The cylindrical ceramic sputtering target described in item 1 of the scope of patent application has a warpage of 0.6 mm or less. 如申請專利範圍第1項或第2項所述之圓筒形陶瓷濺鍍靶，其中，前述圓筒形陶瓷靶材至少含有2個分割圓筒形陶瓷靶材，在將度盤規對著前述各分割圓筒形陶瓷靶材的外表面之由該分割圓筒形陶瓷靶材的兩端分別往內側算起7mm的位置，將前述圓筒形基材的外周面之由前述圓筒形陶瓷靶材的兩端分別往外側算起15mm的位置當作支點，使前述圓筒形陶瓷濺鍍靶旋轉1圈，並測定前述度盤規的計測值時，前述度盤規計測值的最大值與最小值之差，在任一測定點皆於1.0mm以下。 The cylindrical ceramic sputtering target described in item 1 or item 2 of the scope of patent application, wherein the aforementioned cylindrical ceramic target material contains at least two divided cylindrical ceramic target materials. The outer surface of each of the above-mentioned divided cylindrical ceramic targets is 7mm from both ends of the divided cylindrical ceramic target to the inner side, and the outer peripheral surface of the above-mentioned cylindrical substrate is changed from the above-mentioned cylindrical When the two ends of the ceramic target material are 15mm away from the outside as fulcrums, the cylindrical ceramic sputtering target is rotated one turn, and the measured value of the aforementioned dial gauge is measured, the maximum value of the aforementioned dial gauge The difference between the value and the minimum value is less than 1.0mm at any measuring point. 如申請專利範圍第3項所述之圓筒形陶瓷濺鍍靶，其中，鄰接之前述分割圓筒形陶瓷靶材之間的段差皆於 0.3mm以下。 The cylindrical ceramic sputtering target described in item 3 of the scope of patent application, wherein the steps between the adjacent divided cylindrical ceramic targets are all within Below 0.3mm. 如申請專利範圍第1項或第2項所述之圓筒形陶瓷濺鍍靶，其中，於前述圓筒形基材與前述圓筒形陶瓷靶材的兩端之位移為0.5mm以下。 The cylindrical ceramic sputtering target described in item 1 or item 2 of the scope of patent application, wherein the displacement between the two ends of the cylindrical substrate and the cylindrical ceramic target is 0.5 mm or less. 如申請專利範圍第1項或第2項所述之圓筒形陶瓷濺鍍靶，其中，前述圓筒形基材為鈦製或鈦合金製或者鉬製或鉬合金製。 The cylindrical ceramic sputtering target described in item 1 or item 2 of the scope of patent application, wherein the cylindrical substrate is made of titanium or titanium alloy or molybdenum or molybdenum alloy. 如申請專利範圍第1項或第2項所述之圓筒形陶瓷濺鍍靶，其中，前述圓筒形陶瓷靶材的長度是500mm以上。 The cylindrical ceramic sputtering target described in item 1 or item 2 of the scope of patent application, wherein the length of the cylindrical ceramic target material is 500 mm or more. 如申請專利範圍第1項或第2項所述之圓筒形陶瓷濺鍍靶，其中，前述圓筒形陶瓷靶材的相對密度為95%以上。 The cylindrical ceramic sputtering target described in item 1 or item 2 of the scope of patent application, wherein the relative density of the aforementioned cylindrical ceramic target material is 95% or more. 一種圓筒形陶瓷濺鍍靶的製造裝置，其係具有：下部保持構件，其係保持直立之圓筒形陶瓷靶材的下端部以及該圓筒形陶瓷靶材的中空部所收容之圓筒形基材的下端部者；靶材保持構件，其係保持前述圓筒形陶瓷靶材之上端部者；基材保持構件，其係將圓筒形基材的上端面以由上壓附之方式而保持前述圓筒形基材的上端部者；與連結構件，其係連結前述下部保持構件、靶材保持構件以及基材保持構件，且為鈦製或鈦合金製或者鉬製或鉬合金製者。 A manufacturing device for a cylindrical ceramic sputtering target, which has: a lower holding member that holds the lower end of a vertical cylindrical ceramic target and a cylinder accommodated in the hollow portion of the cylindrical ceramic target The lower end of the cylindrical substrate; the target holding member, which holds the upper end of the aforementioned cylindrical ceramic target; the substrate holding member, which presses the upper end surface of the cylindrical substrate against it Means holding the upper end of the cylindrical substrate; and the connecting member, which connects the lower holding member, target holding member, and substrate holding member, and is made of titanium or titanium alloy or molybdenum or molybdenum alloy Controller. 如申請專利範圍第9項所述之圓筒形陶瓷濺鍍靶的製造裝置，其中，前述連結構件至少包括2根柱狀構件。 According to the manufacturing apparatus of the cylindrical ceramic sputtering target described in the scope of patent application, the connecting member includes at least two columnar members. 一種圓筒形陶瓷濺鍍靶的製造方法，其係使用申請專利範圍第9項或第10項所述之圓筒形陶瓷濺鍍靶的製造裝置，其特徵為：前述圓筒形基材為鈦製或是鈦合金製時，前述連結構件是鈦製或是鈦合金製；前述圓筒形基材為鉬製或是鉬合金製時，前述連結構件是鉬製或是鉬合金製，藉由前述下部保持構件以及靶材保持構件分別保持前述圓筒形陶瓷靶材的下端部及上端部，藉由前述下部保持構件以及基材保持構件，分別保持前述圓筒形陶瓷靶材的中空部所收容之鈦製或鈦合金製或者鉬製或鉬合金製的前述圓筒形基材的下端部及上端部，將前述製造裝置、圓筒形陶瓷靶材以及圓筒形基材，加溫至接合前述圓筒形陶瓷靶材與圓筒形基材所使用之焊料的熔點以上之溫度，在前述圓筒形陶瓷靶材與前述圓筒形基材之間所形成之空隙部中，注入已熔解的前述焊料，將前述製造裝置、圓筒形陶瓷靶材、圓筒形基材以及注入至前述空隙部中之焊料冷卻至較前述焊料的熔點低的溫度。 A method for manufacturing a cylindrical ceramic sputtering target, which uses the manufacturing device of the cylindrical ceramic sputtering target described in item 9 or 10 of the scope of patent application, characterized in that the cylindrical substrate is When made of titanium or titanium alloy, the connecting member is made of titanium or titanium alloy; when the cylindrical base material is made of molybdenum or molybdenum alloy, the connecting member is made of molybdenum or molybdenum alloy. The lower end portion and the upper end portion of the cylindrical ceramic target are held by the lower holding member and the target holding member, respectively, and the hollow portion of the cylindrical ceramic target is held by the lower holding member and the substrate holding member, respectively The lower end and upper end of the aforementioned cylindrical substrate made of titanium or titanium alloy or molybdenum or molybdenum alloy contained therein are heated with the aforementioned manufacturing device, cylindrical ceramic target and cylindrical substrate To the temperature above the melting point of the solder used to join the cylindrical ceramic target and the cylindrical substrate, inject into the void formed between the cylindrical ceramic target and the cylindrical substrate The molten solder cools the manufacturing device, the cylindrical ceramic target material, the cylindrical base material, and the solder injected into the void to a temperature lower than the melting point of the solder. 如申請專利範圍第11項所述之圓筒形陶瓷濺鍍靶的製造方法，其中，前述圓筒形陶瓷靶材至少含有2個的分割圓筒形陶瓷靶材，在藉由前述下部保持構件及靶材保持構件而分別保持圓筒形陶瓷靶材的下端部及上端部時，係以使 前述分割圓筒形陶瓷靶材之間的段差成為在0.3mm以下之方式進行調整。 According to the method for manufacturing a cylindrical ceramic sputtering target described in claim 11, the cylindrical ceramic target includes at least two divided cylindrical ceramic targets, and the lower holding member And target holding member to hold the lower end and upper end of the cylindrical ceramic target, respectively, so that The step difference between the aforementioned divided cylindrical ceramic targets is adjusted to be 0.3 mm or less.
TW104129904A 2014-10-28 2015-09-10 Cylindrical ceramics spattering target, and apparatus and method for making same TWI710652B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014219341 2014-10-28
JP2014-219341 2014-10-28

Publications (2)

Publication Number Publication Date
TW201615873A TW201615873A (en) 2016-05-01
TWI710652B true TWI710652B (en) 2020-11-21

Family

ID=55857064

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104129904A TWI710652B (en) 2014-10-28 2015-09-10 Cylindrical ceramics spattering target, and apparatus and method for making same

Country Status (5)

Country Link
JP (2) JP6568867B2 (en)
KR (1) KR102288720B1 (en)
CN (1) CN106232860B (en)
TW (1) TWI710652B (en)
WO (1) WO2016067717A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6259847B2 (en) * 2016-02-05 2018-01-10 住友化学株式会社 Manufacturing method of cylindrical target
JP6774702B2 (en) * 2016-04-04 2020-10-28 三井金属鉱業株式会社 Manufacturing method of cylindrical sputtering target
CN106270866B (en) * 2016-08-30 2018-08-21 常州苏晶电子材料有限公司 A kind of welding method of rotation molybdenum target material
TWI607107B (en) * 2016-09-20 2017-12-01 Linco Technology Co Ltd Reinforced magnetic field generator for sputter target and its cylindrical sputtering target device
JP6220091B1 (en) * 2017-03-22 2017-10-25 Ｊｘ金属株式会社 Sputtering target and manufacturing method thereof
JP6557696B2 (en) * 2017-03-31 2019-08-07 Ｊｘ金属株式会社 Cylindrical sputtering target and manufacturing method thereof
JP6774910B2 (en) * 2017-06-27 2020-10-28 三井金属鉱業株式会社 Manufacturing method of cylindrical sputtering target
JP6768606B2 (en) * 2017-07-18 2020-10-14 三井金属鉱業株式会社 Manufacturing method of cylindrical sputtering target
CN109913839B (en) * 2019-04-29 2021-06-29 河南东微电子材料有限公司 Device and method for preparing target material for magnetron sputtering
KR102248748B1 (en) * 2019-07-29 2021-06-04 경북대학교 산학협력단 Jig for fabricating target of X-ray tube, and method for fabricating target of X-ray tube using the same
KR20220104150A (en) * 2019-11-21 2022-07-26 미쓰이금속광업주식회사 Sputtering target and manufacturing method thereof
KR102412911B1 (en) * 2020-07-08 2022-06-24 주식회사 이엠엘 Manufacturing Method of Cylindrical Target

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010070842A (en) * 2008-08-20 2010-04-02 Tosoh Corp Method for producing cylindrical sputtering target
TW201020333A (en) * 2008-09-25 2010-06-01 Tosoh Corp Cylindrical sputtering target and method for manufacturing the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100348437B1 (en) * 1992-06-16 2002-10-30 죤슨매트히일렉트로닉스인코오퍼레이티드 How to Make Sputtering Target Assemblies and New Target Assemblies
JPH1068072A (en) * 1996-08-26 1998-03-10 Japan Energy Corp Ito cylindrical target and its production
JP4363830B2 (en) * 2002-09-12 2009-11-11 昭和電工株式会社 Tube shape measuring method, apparatus, tube inspection method, apparatus, tube manufacturing method and system
JP4961672B2 (en) * 2004-03-05 2012-06-27 東ソー株式会社 Cylindrical sputtering target, ceramic sintered body, and manufacturing method thereof
JP5194460B2 (en) * 2007-01-26 2013-05-08 東ソー株式会社 Cylindrical sputtering target and manufacturing method thereof
JP5103911B2 (en) * 2007-01-29 2012-12-19 東ソー株式会社 Cylindrical sputtering target and manufacturing method thereof
JP5428741B2 (en) * 2009-10-19 2014-02-26 東ソー株式会社 Manufacturing method of cylindrical sputtering target
JP5610877B2 (en) * 2010-06-25 2014-10-22 株式会社日本セラテック Sputtering target, manufacturing method thereof and target material raw material
EP2593578A4 (en) * 2010-07-12 2014-06-18 Materion Advanced Materials Technologies And Services Inc Rotary target backing tube bonding assembly
JP5607512B2 (en) * 2010-11-24 2014-10-15 古河電気工業株式会社 Cylindrical target material, manufacturing method thereof, and sheet coating method thereof
US20120222956A1 (en) * 2011-03-03 2012-09-06 Applied Materials, Inc. Method and apparatus for forming a cylindrical target assembly
JP6089983B2 (en) * 2012-07-18 2017-03-08 三菱マテリアル株式会社 Cylindrical sputtering target and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010070842A (en) * 2008-08-20 2010-04-02 Tosoh Corp Method for producing cylindrical sputtering target
TW201020333A (en) * 2008-09-25 2010-06-01 Tosoh Corp Cylindrical sputtering target and method for manufacturing the same

Also Published As

Publication number Publication date
JP6568867B2 (en) 2019-08-28
WO2016067717A1 (en) 2016-05-06
CN106232860A (en) 2016-12-14
KR20170074823A (en) 2017-06-30
CN106232860B (en) 2021-07-13
JP2019183285A (en) 2019-10-24
TW201615873A (en) 2016-05-01
KR102288720B1 (en) 2021-08-13
JPWO2016067717A1 (en) 2017-08-10

Similar Documents

Publication Publication Date Title
TWI710652B (en) Cylindrical ceramics spattering target, and apparatus and method for making same
KR101896701B1 (en) Cylindrical sputtering target, and method for manufacturing same
JP6151870B2 (en) Backing plate, sputtering target, and manufacturing method thereof
CN109746453B (en) Laser repair method and device
CN109338357B (en) Laser melting deposition repair method for metal casting defect part
KR20150135530A (en) Li-CONTAINING OXIDE TARGET ASSEMBLY
KR20160022300A (en) Method for manufacturing circular saw with hard tip
JP6028693B2 (en) Cylindrical ceramic body processing method and cylindrical sputtering target
JP6305083B2 (en) Sputtering target and manufacturing method thereof
TWI649295B (en) Sputtering target and its manufacturing method
EP3721465A1 (en) Textured processing chamber components and methods of manufacturing same
JP2018053366A (en) Cylindrical target
WO2021100233A1 (en) Sputtering target and method for manufacturing same
JP6861048B2 (en) Manufacturing method of cylindrical sputtering target, sintered body and cylindrical sputtering target
JP6235186B2 (en) Cylindrical target
TW201731602A (en) Method for manufacturing cylindrical target, and cylindrical target
CN104723186A (en) Machining method of tungsten-silicon alloy
US11766726B2 (en) Method for machining sputtering target, apparatus for machining sputtering target, sputtering target, and method for producing sputtering target product
WO2020250586A1 (en) Sputtering target and sputtering target manufacturing method
Antonik The dark energy camera's optical corrector
JP2013032586A (en) Sputtering target, target material and backing plate