TWI707027B - 磨削磨石 - Google Patents

磨削磨石 Download PDF

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Publication number
TWI707027B
TWI707027B TW105113739A TW105113739A TWI707027B TW I707027 B TWI707027 B TW I707027B TW 105113739 A TW105113739 A TW 105113739A TW 105113739 A TW105113739 A TW 105113739A TW I707027 B TWI707027 B TW I707027B
Authority
TW
Taiwan
Prior art keywords
grinding
average particle
wafer
diamond abrasive
abrasive grains
Prior art date
Application number
TW105113739A
Other languages
English (en)
Chinese (zh)
Other versions
TW201700709A (zh
Inventor
大島龍司
馬路良吾
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201700709A publication Critical patent/TW201700709A/zh
Application granted granted Critical
Publication of TWI707027B publication Critical patent/TWI707027B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10254—Diamond [C]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
TW105113739A 2015-06-10 2016-05-03 磨削磨石 TWI707027B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-117821 2015-06-10
JP2015117821A JP6564624B2 (ja) 2015-06-10 2015-06-10 研削砥石

Publications (2)

Publication Number Publication Date
TW201700709A TW201700709A (zh) 2017-01-01
TWI707027B true TWI707027B (zh) 2020-10-11

Family

ID=57395693

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105113739A TWI707027B (zh) 2015-06-10 2016-05-03 磨削磨石

Country Status (7)

Country Link
US (1) US20160361793A1 (ko)
JP (1) JP6564624B2 (ko)
KR (1) KR102549249B1 (ko)
CN (1) CN106239389A (ko)
DE (1) DE102016210001A1 (ko)
FR (1) FR3037268B1 (ko)
TW (1) TWI707027B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200044726A (ko) * 2018-10-16 2020-04-29 에스아이씨씨 컴퍼니 리미티드 고평탄도, 저손상 빅직경의 단결정 탄화규소 기판 및 그 제조 방법
JP7216613B2 (ja) * 2019-05-16 2023-02-01 株式会社ディスコ 加工装置
CN111300288B (zh) * 2020-04-21 2021-11-09 郑州磨料磨具磨削研究所有限公司 一种电子封装基板材料磨削用砂轮及其制备方法
JP7262864B1 (ja) 2022-09-28 2023-04-24 株式会社東京ダイヤモンド工具製作所 合成砥石、合成砥石アセンブリ、及び、合成砥石の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102398227A (zh) * 2010-09-08 2012-04-04 株式会社迪思科 磨轮
CN103922747A (zh) * 2014-04-30 2014-07-16 郑州磨料磨具磨削研究所有限公司 陶瓷结合剂超硬材料磨具注射成型配方及注射成型方法
CN104066549A (zh) * 2012-01-18 2014-09-24 株式会社则武 陶瓷结合剂超磨粒磨石

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US4923490A (en) * 1988-12-16 1990-05-08 General Electric Company Novel grinding wheels utilizing polycrystalline diamond or cubic boron nitride grit
CN1112141A (zh) * 1994-05-19 1995-11-22 戴延平 一种金刚石树脂砂轮的制造方法
JP3086667B2 (ja) * 1997-04-30 2000-09-11 大阪ダイヤモンド工業株式会社 超砥粒砥石
JP3542520B2 (ja) * 1999-06-01 2004-07-14 株式会社ノリタケカンパニーリミテド ビトリファイド砥石
JP2001009732A (ja) * 1999-06-24 2001-01-16 Noritake Co Ltd ビトリファイドボンド砥石及びその製造方法
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US7097549B2 (en) * 2001-12-20 2006-08-29 Ppg Industries Ohio, Inc. Polishing pad
JP4116333B2 (ja) * 2002-06-05 2008-07-09 ミネベア株式会社 超仕上用砥石
US20050210755A1 (en) * 2003-09-05 2005-09-29 Cho Hyun S Doubled-sided and multi-layered PCBN and PCD abrasive articles
CN100376715C (zh) * 2004-12-08 2008-03-26 上海江信超硬材料有限公司 一种金刚石表面涂覆玻璃涂覆立方氮化硼镀钛复合结构及制造方法
US7494404B2 (en) * 2006-02-17 2009-02-24 Chien-Min Sung Tools for polishing and associated methods
US8398462B2 (en) * 2008-02-21 2013-03-19 Chien-Min Sung CMP pads and method of creating voids in-situ therein
CN101434827B (zh) * 2008-12-17 2012-06-13 厦门致力金刚石科技股份有限公司 一种含陶瓷颗粒的磨料及其制备方法和应用
JP2012056012A (ja) * 2010-09-08 2012-03-22 Disco Corp 切削砥石
US9266221B2 (en) * 2010-10-06 2016-02-23 Saint-Gobain Abrasives, Inc. Nonwoven composite abrasive comprising diamond abrasive particles
JP2012086291A (ja) * 2010-10-18 2012-05-10 Disco Corp 切削砥石
JP2012200847A (ja) * 2011-03-28 2012-10-22 Noritake Co Ltd ビトリファイド超砥粒砥石
JP5373171B1 (ja) * 2012-10-20 2013-12-18 株式会社ナノテム 砥石およびそれを用いた研削・研磨装置
JP6225991B2 (ja) * 2013-07-19 2017-11-15 国立大学法人 名古屋工業大学 金属製研磨パッドおよびその製造方法
JP2016147359A (ja) * 2015-02-13 2016-08-18 株式会社ディスコ 研削砥石

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102398227A (zh) * 2010-09-08 2012-04-04 株式会社迪思科 磨轮
CN104066549A (zh) * 2012-01-18 2014-09-24 株式会社则武 陶瓷结合剂超磨粒磨石
CN103922747A (zh) * 2014-04-30 2014-07-16 郑州磨料磨具磨削研究所有限公司 陶瓷结合剂超硬材料磨具注射成型配方及注射成型方法

Also Published As

Publication number Publication date
TW201700709A (zh) 2017-01-01
JP6564624B2 (ja) 2019-08-21
KR102549249B1 (ko) 2023-06-28
FR3037268A1 (fr) 2016-12-16
FR3037268B1 (fr) 2019-09-06
JP2017001136A (ja) 2017-01-05
US20160361793A1 (en) 2016-12-15
DE102016210001A1 (de) 2016-12-15
KR20160145500A (ko) 2016-12-20
CN106239389A (zh) 2016-12-21

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