TWI700728B - 用於控制處理系統的方法 - Google Patents
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Abstract
於此描述之實施例一般相關於用於控制處理系統的方法。特定地,可基於進入處理系統的材料之流動來控制處理系統的子晶圓廠構件。在一些實施例中,可根據一個或更多個前驅氣體的流動控制使用以稀釋廢氣的惰性氣體之流動。因此,在減輕臨界EHS考量的同時,減低運行處理系統的成本。
Description
於此描述之實施例一般相關於電子裝置的製造,且更特定地,相關於用於控制處理系統的方法。
藉由處理系統的電子裝置之製造典型地導致副產物廢氣的產生。該等廢氣可包含可為有害的及/或危險的所不欲種類。可稀釋廢氣中所不欲種類的濃度,且典型地由子晶圓廠構件(例如,真空幫浦、使用點(POU)緩和及熱移除裝置)執行該稀釋。子晶圓廠構件典型地被設計成管理最糟情況的風險情境,以便減輕臨界的環境、健康及安全(EHS)考量。結果,可持續操作許多子晶圓廠構件,而實際上沒有等待時間。
因此,需要用於操作子晶圓廠構件的改良方法。
於此描述之實施例一般相關於用於控制處理系統的方法。在一個實施例中,方法包含以下步驟:流動一前驅氣體進入一處理腔室;流動一惰性氣體進入一
排放線,該排放線耦合至該處理腔室;及基於該前驅氣體的該流動,控制該惰性氣體的該流動。
在另一實施例中,方法包含以下步驟:以一第一流動速率流動一前驅氣體進入一處理腔室;以一第二流動速率流動一惰性氣體進入一排放線,該排放線耦合至該處理腔室;改變該第一流動速率至一第三流動速率;及基於該第一流動速率至該第三流動速率的該改變,改變該第二流動速率至一第四流動速率。
在另一實施例中,方法包含以下步驟:流動一前驅氣體進入一處理腔室;流動一冷卻劑至該處理腔室的一緩和系統下游;及基於該前驅氣體的該流動,控制該冷卻劑的該流動。
100‧‧‧處理系統
102‧‧‧處理腔室
103‧‧‧內部處理容積
105‧‧‧氣體入口
106‧‧‧控制器
107‧‧‧出口
108‧‧‧閥
112‧‧‧真空幫浦
113‧‧‧緩和系統
114‧‧‧幫浦
115‧‧‧管道
116‧‧‧排放線
118‧‧‧CPU
120‧‧‧記憶體
122‧‧‧支援電路
124‧‧‧氣體來源
200‧‧‧處理系統
202‧‧‧幫浦
於是可以詳細理解本揭示案上述特徵中的方式,可藉由參考實施例而具有本揭示案的更特定描述(簡短總結如上),其中一些圖示於所附圖式中。然而,注意所附圖式僅圖式本揭示案典型的實施例,因此不考慮限制其範圍,因為本揭示案可允許其他等效實施例。
第1圖根據一個實施例示意地圖示處理系統。
第2圖根據另一實施例示意地圖示處理系統。
為了便於理解,盡可能使用相同元件符號,以標示圖式中常見的相同元件。思量揭露於一個實施例中的元件可有利地使用於其他實施例,而無須特定敘述。
於此描述之實施例一般相關於用於控制處理系統的方法。特定地,可基於進入處理系統的材料之流動來控制處理系統的子晶圓廠構件。在一些實施例中,可根據一個或更多個前驅氣體的流動控制使用以稀釋廢氣的惰性氣體之流動。因此,在減輕臨界EHS考量的同時,減低運行處理系統的成本。
在一個實施例中,方法包含以下步驟:流動一前驅氣體進入一處理腔室;流動一惰性氣體進入一排放線,該排放線耦合至該處理腔室;及基於該前驅氣體的該流動,控制該惰性氣體的該流動。
在另一實施例中,方法包含以下步驟:以一第一流動速率流動一前驅氣體進入一處理腔室;以一第二流動速率流動一惰性氣體進入一排放線,該排放線耦合至該處理腔室;改變該第一流動速率至一第三流動速率;及基於該第一流動速率至該第三流動速率的該改變,改變該第二流動速率至一第四流動速率。
在另一實施例中,方法包含以下步驟:流動一前驅氣體進入一處理腔室;流動一冷卻劑至該處理腔
室的一緩和系統下游;及基於該前驅氣體的該流動,控制該冷卻劑的該流動。
第1圖根據一個實施例示意地圖示處理系統100。如第1圖中所展示,處理系統100一般可包含具有內部處理容積103的處理腔室102、耦合至一個或更多個氣體來源124的一個或更多個氣體入口105、及經由排放線116耦合至真空幫浦112的出口107。一個或更多個氣體來源124可提供一個或更多個氣體至處理腔室102,例如前驅氣體、清理氣體、蝕刻氣體、沖洗氣體,諸如此類。一般使用真空幫浦112以自處理腔室102移除材料(例如廢氣)。也可使用真空幫浦112與設置於排放線116中的閥108之組合來控制處理腔室102中的壓力。
可使用子晶圓廠構件(例如幫浦114)以抽吸惰性氣體(例如氮氣)經由管道115進入排放線116,以便稀釋廢氣。可將所稀釋的廢氣饋送進入處理腔室102的緩和系統113下游。傳統上,持續操作幫浦114且設定惰性氣體的流動於最大值。廢氣的稀釋減低不慎逸漏而導致發火性反應的風險。然而,惰性氣體的大量流動需要更多緩和能量以處理稀釋的廢氣。為了減低操作子晶圓廠構件的成本及更有效率的緩和廢氣,可使用控制器106。
可耦合控制器106以自一個或更多個氣體來源124或位於一個或更多個氣體來源124及處理腔室
102之間的管道中的大量流動控制器(未展示)接收一流動速率或複數個流動速率。也可耦合控制器106以傳送設定點至子晶圓廠構件,例如幫浦114。可藉由控制器106基於自一個或更多個氣體來源124進入處理腔室102的氣體流動來控制子晶圓廠構件,例如幫浦114。在一個實施例中,可根據進入處理腔室102的一個或更多個前驅氣體的流動來控制使用以稀釋廢氣的惰性氣體之流動。在一些實施例中,可使用PID類型的演算法以基於一個或更多個前驅氣體的流動來控制使用以稀釋廢氣的惰性氣體之流動。例如,可設定該惰性氣體的流動與前驅氣體的流動成比例。在一個實施例中,矽烷基前驅氣體自氣體來源124流動進入處理腔室102。因為具有矽烷基前驅氣體而導致產生出廢氣中有害的或危險的種類,可使用矽烷基前驅氣體的流動以控制子晶圓廠構件。在處理期間,矽烷基前驅氣體可以第一流動速率流動進入處理腔室102,該第一流動速率被傳送至控制器106。控制器106可對幫浦114發出信號以基於矽烷基前驅氣體的第一流動速率而經由管道115以第二流動速率注射惰性氣體(例如氮氣)進入排放線116。如果矽烷基前驅氣體的流動速率增加或減少,可藉由控制器經由幫浦114根據地調整抽吸進入排放線116的惰性氣體之流動速率,例如與矽烷基前驅氣體的流動速率成比例。例如,如果矽烷基前驅氣體的流動速率減少,惰性氣體的流動速率也減少。此外,如果矽烷基前驅氣體進入處
理腔室102的流動暫停,也可停止惰性氣體進入排放線116的流動。藉由基於矽烷基前驅氣體的流動速率而變化惰性氣體進入排放線116的流動速率,減低操作子晶圓廠構件(例如幫浦114)的成本。此外,改良緩和稀釋廢氣的效率。
應注意在控制惰性氣體的流動速率與前驅氣體(例如上述的矽烷基前驅氣體)的流動速率成比例的實施例中,可基於處理需求動態地調整比例。例如,在非常低的矽烷基前驅氣體流動速率下,可減低惰性氣體流動速率的比例,而在高的矽烷基前驅氣體流動速率下,可增加惰性氣體流動速率的比例。以此方式,可控制惰性氣體的流動速率與前驅氣體的流動速率成比例,但惰性氣體的流動速率可較前驅氣體的流動速率增加的更快,以減輕關聯於前驅氣體增加的流動速率而增加的風險。
在一些情況下,惰性氣體的流動速率可基於多於一個前驅氣體的流動速率。例如,可基於第一前驅氣體的流動速率決定第一流動速率,可基於第二前驅氣體的流動速率決定第二流動速率,且可藉由第一流動速率及第二流動速率的組合來決定惰性氣體的流動速率。可決定第一流動速率與第一前驅氣體的流動速率成比例,或藉由成比例、積分或微分控制的任何組合。可相似地決定第二流動速率與第二前驅氣體的流動速率成比例,或藉由成比例、積分或微分控制的任何組合。第一
流動速率及第二流動速率的組合可為簡單加成,或可為線性或非線性組合以反應出例如關聯於不同前驅氣體的不同風險層級。如果第一前驅氣體具有較第二前驅氣體高的風險層級,可藉由用於決定第一流動速率及第二流動速率的不同比例的常數,或藉由衡量第一前驅氣體大於第二前驅氣體的風險之線性或非線性組合,來反應較高風險層級。
控制器106可包含中央處理單元(CPU)118、記憶體120、及針對CPU 118的支援電路122。記憶體120可為一個或更多個易於取得的記憶體,例如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟、快閃記憶體、或任何其他形式的數位儲存,在地或遠端。支援電路122耦合至CPU 118以支援CPU 118。支援電路122可包含快取、功率供應、時脈電路、輸入/輸出電路及子系統,諸如此類。
第2圖根據一個實施例示意地圖示處理系統200。如第2圖中所展示,幫浦202可耦合至緩和系統113,以便抽吸冷卻劑(例如水)至處理腔室102的緩和系統113下游。再次,傳統上冷卻劑可於緩和系統113內持續以最大流動速率流動,以提供緩和系統113的冷卻。為了減低操作幫浦202的成本,控制器106電性地耦合至幫浦202以基於氣體自一個或更多個氣體來源124進入處理腔室102的流動來控制冷卻劑的流動速率。控制器106可使用如用於控制幫浦114的相似方法
來控制幫浦202。例如,如果減低流動進入處理腔室102的氣體或複數個氣體之流動速率,也減低至緩和系統113的冷卻劑之流動速率。在一些實施例中,幫浦114(第1圖)被包含在處理系統200中,且可藉由控制器106控制幫浦114,如第1圖中所描述。
除了幫浦114、202以外,控制器106可基於進入處理腔室的氣體或複數個氣體的流動額外地控制其他子晶圓廠構件(例如針對產生壓縮空氣的空氣掌控系統的幫浦)。因此,更有效率的以更低的成本操作由控制器控制的子晶圓廠構件。
前述係實施例,可修改其他及進一步的實施例而不遠離其基本範圍,且該範圍由隨後的申請專利範圍所決定。
100‧‧‧處理系統
102‧‧‧處理腔室
103‧‧‧內部處理容積
105‧‧‧氣體入口
106‧‧‧控制器
107‧‧‧出口
108‧‧‧閥
112‧‧‧真空幫浦
113‧‧‧緩和系統
114‧‧‧幫浦
115‧‧‧管道
116‧‧‧排放線
118‧‧‧CPU
120‧‧‧記憶體
122‧‧‧支援電路
124‧‧‧氣體來源
Claims (16)
- 一種用於控制一處理系統的方法,包括以下步驟:使一前驅氣體流動進入一處理腔室;在該處理腔室與在該處理腔室下游的一緩和系統之間的一位置處將一惰性氣體直接注入一排放線,其中該惰性氣體繞過該處理腔室;及基於該前驅氣體的流動來控制該惰性氣體的流動,其中係回應於該前驅氣體的流動的一改變而控制該惰性氣體的流動。
- 如請求項1所述之方法,其中該前驅氣體為一矽烷基前驅氣體。
- 如請求項2所述之方法,其中該惰性氣體為氮氣體。
- 如請求項1所述之方法,其中該控制該惰性氣體的流動之步驟係由一控制器控制一子晶圓廠構件來執行,該子晶圓廠構件耦合至該排放線。
- 如請求項4所述之方法,其中進入該處理腔室的該前驅氣體的流動速率被傳送至該控制器。
- 如請求項5所述之方法,其中該控制器使用PID演算法以基於該前驅氣體的流動來控制該惰性氣體的流動。
- 如請求項1所述之方法,其中該惰性氣體的流動對該前驅氣體的流動的一比例係動態調整的。
- 如請求項1所述之方法,其中該前驅氣體的流動係於一第一流動速率,且該惰性氣體被以一第二流動速率注入該排放線。
- 如請求項8所述之方法,其中該前驅氣體的流動的該改變包含該第一流動速率的一提升,且控制該惰性氣體的流動之步驟包含以下步驟:提升該第二流動速率。
- 如請求項8所述之方法,其中該前驅氣體的流動的該改變,包含該第一流動速率的一降低,且控制該惰性氣體的流動之步驟包含以下步驟:降低該第二流動速率。
- 如請求項1所述之方法,其中該惰性氣體的該注入的該位置位於一幫浦與該緩和系統之間。
- 一種用於控制一處理系統的方法,包括以下步驟:使一前驅氣體流動進入一處理腔室;將一冷卻劑直接注入至該處理腔室下游的一緩和系統,其中該冷卻劑繞過該處理腔室;及基於該前驅氣體的流動,控制該冷卻劑的流動,其中回應於該前驅氣體的流動的一改變而控制該冷卻 劑的流動。
- 如請求項12所述之方法,其中該前驅氣體為一矽烷基前驅氣體。
- 如請求項12所述之方法,其中該控制該冷卻劑的流動之步驟係由一控制器控制一子晶圓廠構件來執行,該子晶圓廠構件耦合至該緩和系統。
- 如請求項14所述之方法,其中進入該處理腔室的該前驅氣體的流動速率被傳送至該控制器。
- 如請求項15所述之方法,其中該控制器使用PID演算法以基於該前驅氣體的流動來控制該冷卻劑的流動。
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CN108591826A (zh) * | 2018-04-23 | 2018-09-28 | 睿力集成电路有限公司 | 气体处理***及处理方法 |
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