TWI697549B - 液晶高分子膜及包含其之積層板 - Google Patents
液晶高分子膜及包含其之積層板 Download PDFInfo
- Publication number
- TWI697549B TWI697549B TW108147226A TW108147226A TWI697549B TW I697549 B TWI697549 B TW I697549B TW 108147226 A TW108147226 A TW 108147226A TW 108147226 A TW108147226 A TW 108147226A TW I697549 B TWI697549 B TW I697549B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid crystal
- crystal polymer
- polymer film
- metal foil
- copper foil
- Prior art date
Links
- 229920000106 Liquid crystal polymer Polymers 0.000 title claims abstract description 144
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 title claims abstract description 144
- 239000011888 foil Substances 0.000 claims abstract description 80
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 238000003780 insertion Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 55
- 239000011889 copper foil Substances 0.000 description 54
- 230000000052 comparative effect Effects 0.000 description 44
- 238000002360 preparation method Methods 0.000 description 26
- 229920005989 resin Polymers 0.000 description 20
- 239000011347 resin Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 14
- 239000000523 sample Substances 0.000 description 12
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 10
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 238000003825 pressing Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- -1 aliphatic hydroxy compounds Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 4
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 4
- KAUQJMHLAFIZDU-UHFFFAOYSA-N 6-Hydroxy-2-naphthoic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 KAUQJMHLAFIZDU-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- NCPXQVVMIXIKTN-UHFFFAOYSA-N trisodium;phosphite Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])[O-] NCPXQVVMIXIKTN-UHFFFAOYSA-N 0.000 description 4
- 238000006640 acetylation reaction Methods 0.000 description 3
- 208000028659 discharge Diseases 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- DTQZKOBDNLNBCU-UHFFFAOYSA-N 1-methylimidazole Chemical compound CN1C=CN=C1.CN1C=CN=C1 DTQZKOBDNLNBCU-UHFFFAOYSA-N 0.000 description 1
- JUPXISQAWLNMLW-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1.OC(=O)C1=CC=CC(O)=C1 JUPXISQAWLNMLW-UHFFFAOYSA-N 0.000 description 1
- ROQLQGQHEMKBKA-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1.NC1=CC=C(C(O)=O)C=C1 ROQLQGQHEMKBKA-UHFFFAOYSA-N 0.000 description 1
- QGNGOGOOPUYKMC-UHFFFAOYSA-N 4-hydroxy-6-methylaniline Chemical compound CC1=CC(O)=CC=C1N QGNGOGOOPUYKMC-UHFFFAOYSA-N 0.000 description 1
- BOXYODYSHAHWPN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1.OC(=O)C1=CC=C(O)C=C1 BOXYODYSHAHWPN-UHFFFAOYSA-N 0.000 description 1
- DRNSWCJVNHUPHS-UHFFFAOYSA-N 6-hydroxynaphthalene-2-carboxylic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21.C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 DRNSWCJVNHUPHS-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- ZLASZWVLNCRMAI-UHFFFAOYSA-N benzene-1,3-dicarboxylic acid;naphthalene-2,6-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1.C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 ZLASZWVLNCRMAI-UHFFFAOYSA-N 0.000 description 1
- WRPSKOREVDHZHP-UHFFFAOYSA-N benzene-1,4-diamine Chemical compound NC1=CC=C(N)C=C1.NC1=CC=C(N)C=C1 WRPSKOREVDHZHP-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- INDXRDWMTVLQID-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO.OCCCCO INDXRDWMTVLQID-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- HJJLDNAELNDBBL-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO.OCCCCCCO HJJLDNAELNDBBL-UHFFFAOYSA-N 0.000 description 1
- YVSCCMNRWFOKDU-UHFFFAOYSA-N hexanedioic acid Chemical compound OC(=O)CCCCC(O)=O.OC(=O)CCCCC(O)=O YVSCCMNRWFOKDU-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- ZWPWUVNMFVVHHE-UHFFFAOYSA-N terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1.OC(=O)C1=CC=C(C(O)=O)C=C1 ZWPWUVNMFVVHHE-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/56—Insulating bodies
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/043—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/098—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/18—Layered products comprising a layer of metal comprising iron or steel
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/42—Layered products comprising a layer of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
- C08G63/06—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from hydroxycarboxylic acids
- C08G63/065—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from hydroxycarboxylic acids the hydroxy and carboxylic ester groups being bound to aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/03—3 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
本創作關於一種液晶高分子膜及包含其之積層板。液晶高分子膜具有相對的第一表面和第二表面,該第一表面的十點平均粗糙度 (Rz)相對於最大高度 (Ry)的比值為0.30至0.62。藉由控制液晶高分子膜至少一表面的Rz/Ry能提升液晶高分子膜與金屬箔疊合的剝離強度,並使包含其之積層板仍維持低訊號損失的優點。
Description
本創作係關於一種應用於積層板的高分子膜,尤指一種液晶高分子膜及包含其之積層板。
隨著行動通訊技術的快速發展,業界正積極開發第五代行動通訊技術 (5
thGeneration Mobile Networks,簡稱5G),以優化4G通訊技術的資料傳輸速度、回應時間、系統容量等效能。
由於5G通訊技術係利用高頻波段進行訊號傳輸,當訊號頻率越高時,傳遞的訊號損失 (insertion loss)也越大。為了符合在高頻波段達成訊號傳輸的目的,現有技術已知可選擇低介電性質的液晶高分子膜 (Liquid Crystal Polymer Film,簡稱LCP膜)搭配金屬箔製作積層板,以設法降低訊號傳輸的絕緣損失。
然而,液晶高分子膜與金屬箔之間多半存在附著性不足的問題,於後續使用上易導致線路脫落而嚴重劣化積層板的後續加工。因此,現有技術仍有待改善液晶高分子膜與金屬箔之間的剝離強度,以設法開發適用於5G產品的積層板。
有鑑於此,本創作之目的在於提升液晶高分子膜與金屬箔之間的剝離強度。
為達成前述目的,本創作提供一種液晶高分子膜,其具有相對的第一表面和第二表面,該第一表面的十點平均粗糙度 (ten-point mean roughness,Rz)相對於最大高度 (maximum height,Ry)的比值 (簡稱Rz/Ry)係0.30至0.62。
藉由控制液晶高分子膜其中一表面 (第一表面)的Rz/Ry之特性,能增加液晶高分子膜疊合在金屬箔上的附著性,提升液晶高分子膜與金屬箔之間的剝離強度,從而避免積層板於後續加工中發生如線路脫落之問題。
依據本創作,就液晶高分子膜的第二表面而言,其Rz/Ry也可為0.30至0.62;據此,本創作之液晶高分子膜不論是透過第一表面、第二表面或其二者分別與至少一金屬箔疊合皆能獲得良好的附著性,從而提升液晶高分子膜與至少一金屬箔之間的剝離強度。較佳的,本創作之液晶高分子膜的第一表面及/或第二表面的Rz/Ry也可為0.36至0.61。於其中一實施態樣中,本創作之液晶高分子膜之第一表面的Rz/Ry與第二表面的Rz/Ry可為相同或不同。於其中一實施態樣中,本創作之液晶高分子膜的第一表面的Rz/Ry及第二表面的Rz/Ry皆落在前述範圍。
依據本創作,液晶高分子膜的第一表面的Rz小於或等於2微米 (µm)。較佳的,本創作之液晶高分子膜的第一表面的Rz小於或等於1.5 µm;更佳的,本創作之液晶高分子膜的第一表面的Rz可大於或等於0.3 µm且小於或等於1.5 µm;再更佳的,本創作之液晶高分子膜的第一表面的Rz可大於或等於0.3 µm且小於或等於1.4 µm;又更佳的,本創作之液晶高分子膜的第一表面的Rz可大於或等於0.3 µm且小於或等於1.3 µm;再又更佳的,本創作之液晶高分子膜的第一表面的Rz可大於或等於0.35 µm且小於或等於1.2 µm;又再又更佳的,本創作之液晶高分子膜之第一表面的Rz可大於或等於0.39 µm且小於或等於1.2 µm。於其中一實施態樣中,本創作之液晶高分子膜之第一表面的Rz與第二表面的Rz可為相同或不同。於其中一實施態樣中,本創作之液晶高分子膜的第一表面的Rz及第二表面的Rz皆落在前述範圍。
依據本創作,液晶高分子膜的第一表面的Ry可小於或等於2.2 µm。於其中一實施態樣中,本創作之液晶高分子膜的第一表面的Ry可小於或等於2.0 µm;更佳的,本創作之液晶高分子膜的第一表面的Ry可大於或等於0.5 µm且小於或等於1.8 µm;再更佳的,本創作之液晶高分子膜的第一表面的Ry可大於或等於0.6 µm且小於或等於1.6 µm。於其中一實施態樣中,本創作之液晶高分子膜之第一表面的Ry與第二表面的Ry可為相同或不同。於其中一實施態樣中,本創作之液晶高分子膜的第一表面的Ry及第二表面的Ry皆落在前述範圍。
較佳的,本創作之液晶高分子膜的第一表面的算術平均粗糙度 (arithmetic average roughness,Ra)可小於或等於0.09 µm,據此,所述液晶高分子膜應用於積層板中能有利於降低其訊號損失,使其更加適用於高階的5G產品中。
更佳的,本創作之液晶高分子膜的第一表面的Ra可大於或等於0.02 µm且小於或等於0.08 µm;再更佳的,第一表面的Ra可大於或等於0.02 µm且小於或等於0.07 µm;又再更佳的,第一表面的Ra可大於或等於0.02 µm且小於或等於0.06 µm。藉由降低液晶高分子膜的第一表面的Ra之技術手段,能進一步降低包含液晶高分子膜之積層板的訊號損失,使其更加適用於高階的5G產品中。於其中一實施態樣中,本創作之液晶高分子膜之第一表面的Ra與第二表面的Ra可為相同或不同。於其中一實施態樣中,本創作之液晶高分子膜的第一表面的Ra及第二表面的Ra皆可落在前述範圍。
依據本創作,所述液晶高分子膜可使用市售的液晶高分子樹脂所製得,也可使用習知的原料進行製備,在本創作中並沒有特別限制。舉例言之,可使用芳香族或脂肪族羥基化合物 (例如,對苯二酚 (hydroquinone)、間苯二酚 (resorcin)、2,6-萘二酚 (2,6-naphthalenediol)、乙二醇 (ethanediol)、1,4-丁二醇 (1,4-butanediol)、1,6-己二醇 (1,6-hexanediol))、芳香族或脂肪族二羧酸 (例如,對苯二甲酸 (terephthalic acid)、間苯二甲酸 (isophthalic acid)、2,6-萘二甲酸 (2,6-naphthalenedicarboxylic acid)、2-氯對苯二甲酸 (2-chloroterephthalic acid)、己二酸 (adipic acid))、芳香族羥基羧酸 (例如,3-羥基苯甲酸 (3-hydroxybenzoic acid)、4-羥基苯甲酸 (4-hydroxybenzoic acid)、6-羥基-2-萘甲酸 (6-hydroxy-2-naphthalene carboxylic acid)、4'-羥基聯苯-4-羧酸 (4'-hydroxy-4-biphenylcarboxylic acid))、芳香族胺類化合物 (例如,對苯二胺 (
p-phenylenediamine)、4,4ˊ-二胺基聯苯 (4,4ˊ-diaminobiphenyl)、2,6-萘二胺 (naphthalene-2,6-diamine)、4-胺基苯酚 (4-aminophenol)、4-胺基-3-甲基苯酚 (4-amino-3-methyl phenol)、4-胺基苯甲酸 (4-aminobenzoic acid))為原料製備液晶高分子樹脂,再利用此液晶高分子樹脂製得本創作的液晶高分子膜。在本創作其中一實施態樣中,可選用6-羥基-2-萘甲酸、4-羥基苯甲酸以及乙酸酐 (acetyl anhydride)得到用於製備本創作之液晶高分子膜的液晶高分子樹脂。於其中一實施態樣中,液晶高分子樹脂的熔點約為250°C至360°C。
於其中一實施態樣中,所屬技術領域具有通常知識者可視不同需求於製備本創作的液晶高分子膜時加入添加劑,例如潤滑劑、抗氧化劑、電絕緣劑或填充劑,但並非僅限於此。舉例言之,可選用的添加劑為聚碳酸酯、聚醯胺、聚苯硫醚或聚醚醚酮等,但並非僅限於此。
依據本創作,所述液晶高分子膜的厚度並沒有特別限制,舉例言之,所述液晶高分子膜的厚度可為10 µm至500 µm;較佳的,本創作之液晶高分子膜的厚度可為10 µm至300 µm;更佳的,本創作之液晶高分子膜的厚度可為15 µm至250 µm;再更佳的,本創作之液晶高分子膜的厚度可為20 µm至200 µm。
為達成前述目的,本創作另提供一種積層板,其包含第一金屬箔及前述液晶高分子膜,該第一金屬箔係設置於該液晶高分子膜的第一表面上。
於其中一實施態樣中,本創作之積層板可進一步包含第二金屬箔,該第二金屬箔係設置於該液晶高分子膜的第二表面上,即,本創作之液晶高分子膜係夾置於前述第一金屬箔和第二金屬箔之間。於此實施態樣中,當同時控制液晶高分子膜的第一表面和第二表面的Rz/Ry特性,能同時提升液晶高分子膜疊合在第一、第二金屬箔上的附著性,提升液晶高分子膜與第一、第二金屬箔之間的剝離強度。
依據本創作,「疊合」並不限於直接接觸,更包含間接接觸。舉例言之,於本創作其中一實施態樣中,所述積層板中第一金屬箔與液晶高分子膜係以直接接觸的方式相互疊合,即,第一金屬箔係設置於該液晶高分子膜的第一表面上並與該液晶高分子膜的第一表面直接接觸。於本創作另一實施態樣中,所述積層板中第一金屬箔與液晶高分子膜係以間接接觸的方式相互疊合,即,第一金屬箔與液晶高分子膜之間可以間接接觸的方式相互疊合,舉例言之,可視不同需求於第一金屬箔與液晶高分子膜之間設置一連結層,使第一金屬箔與液晶高分子膜之第一表面透過該連結層相互接觸。所述連結層之材料可根據不同需求而調整,以提供相應的功能;舉例言之,所述連結層之材料可包含鎳、鈷、鉻或其合金,以提供耐熱性、耐化性、或電阻性之作用。同樣地,所述積層板中第二金屬箔與液晶高分子膜亦可選擇以直接接觸或者間接接觸的方式相互疊合。於其中一實施態樣中,液晶高分子膜與第一金屬箔的疊合方式以及液晶高分子膜與第二金屬箔的疊合方式可為相同或不同。
依據本創作,所述第一金屬箔及/或第二金屬箔可為銅箔、金箔、銀箔、鎳箔、鋁箔或不鏽鋼箔等,但並非僅限於此。於其中一實施態樣中,所述第一金屬箔及第二金屬箔係選用不同材質。較佳的,第一金屬箔及/或第二金屬箔可為銅箔,使銅箔與液晶高分子膜疊合形成銅箔積層板 (copper clad laminate,簡稱CCL)。此外,所述第一金屬箔及/或第二金屬箔的製備方法並無特別限制,只要不違反本創作之發明目的即可,舉例言之,可選用輥軋法或電解法進行製備,但並非僅限於此。
依據本創作,所述第一金屬箔及/或第二金屬箔的厚度並沒有特別限制,所屬技術領域中具有通常知識者可視不同需求進行相應的調整。舉例言之,於其中一實施態樣中,第一金屬箔及/或第二金屬箔的厚度可各自獨立為1 µm至200 µm;較佳的,所述第一金屬箔及/或第二金屬箔的厚度可各自獨立為1 µm至40 µm;更佳的,所述第一金屬箔及/或第二金屬箔的厚度可各自獨立為1 µm至20 µm;再更佳的,所述第一金屬箔及/或第二金屬箔的厚度可各自獨立為3 µm至20 µm。
依據本創作,所屬技術領域中具有通常知識者可視不同需求,對本創作之第一金屬箔及/或第二金屬箔進行表面處理。舉例言之,可選用粗糙化處理、酸鹼處理、加熱處理、脫脂處理、紫外線照射處理、電暈放電處理、電漿處理、塗佈底漆處理等,但並非僅限於此。
依據本創作,所述第一金屬箔及/或第二金屬箔的粗糙度並無特別的限制,所屬技術領域中具有通常知識者可根據不同的需求進行相應的調整。於其中一實施態樣中,所述第一金屬箔及/或第二金屬箔的Rz可各自獨立為大於或等於0.1 µm且小於或等於2.0 µm。較佳的,所述第一金屬箔及/或第二金屬箔的Rz可各自獨立為大於或等於0.1 µm且小於或等於1.5 µm。於其中一實施態樣中,第一金屬箔及第二金屬箔的Rz可為相同或不同。於其中一實施態樣中,第一金屬箔的Rz及第二金屬箔的Rz皆落在前述範圍。
於其中一實施態樣中,所屬技術領域具有通常知識者可視不同需求額外設置第三金屬箔,所述第三金屬箔可與第一金屬箔及/或第二金屬箔相同或不同。於其中一實施態樣中,所述第三金屬箔的Rz可落在前述第一金屬箔及/或第二金屬箔的Rz之範圍。
於其中一實施態樣中,所述積層板可包含複數液晶高分子膜。在不違反本創作之精神的前提下,所屬技術領域具有通常知識者可視不同需求將複數本創作之液晶高分子膜與複數金屬箔 (例如,前述第一金屬箔、第二金屬箔及/或第三金屬箔)疊合,製得具有複數液晶高分子膜及複數金屬箔疊合的積層板。
於本說明書中,所述「十點平均粗糙度」、「最大高度」及「算術平均粗糙度」皆係根據JIS B 0601:1994之方法定義。
以下,列舉數種製備例說明用於製作本創作之液晶高分子膜的原料,另列舉數種實施例說明本創作之液晶高分子膜和積層板的實施方式,同時提供數種比較例作為對照,本領域技術人員可藉由下方實施例和比較例的內容輕易理解本創作能達到的優點及效果。應當理解的是,本說明書所列舉的實施例僅僅用於示範性說明本創作的實施方式,並非用於侷限本創作的範圍,本領域技術人員可以根據其通常知識在不悖離本創作的精神下進行各種修飾、變更,以實施或應用本創作之內容。
《
液晶高分子樹脂
》
製備例
1
:液晶高分子樹脂
在3公升的高壓釜中,將700克的6-羥基-2-萘甲酸、954克的4-羥基苯甲酸、1085克的乙酸酐及1.3克的亞磷酸鈉 (sodium phosphite),使其於氮氣氣氛、160°C、常壓的環境下進行約2小時的乙醯化反應;接著,以每小時30°C的升溫速率升溫至320°C,再於此溫度條件下將壓力由760托 (torr)緩慢下降至3 torr以下、溫度由320°C升溫至340°C;之後,提高攪拌功率、升壓、洩料、拉條、切粒,得到熔點約265°C、黏度 (@300°C)約60帕斯卡·秒 (Pa·s)的液晶高分子樹脂。
製備例
2
:液晶高分子樹脂
在3公升的高壓釜中,將440克的6-羥基-2-萘甲酸、1145克的4-羥基苯甲酸、1085克的乙酸酐及1.3克的亞磷酸鈉,使其於氮氣氣氛、160°C、常壓的環境下進行約2小時的乙醯化反應;接著,以每小時30°C的升溫速率升溫至320°C,再於此溫度條件下將壓力由760 torr緩慢下降至3 torr以下、溫度由320°C升溫至340°C;之後,提高攪拌功率、升壓、洩料、拉條、切粒,得到熔點約305°C、黏度 (@300°C)約40 Pa·s的液晶高分子樹脂。
製備例
3
:液晶高分子樹脂
在3公升的高壓釜中,將540克的6-羥基-2-萘甲酸、1071克的4-羥基苯甲酸、1086克的乙酸酐、1.3克的亞磷酸鈉及0.3克的1-甲基咪唑 (1-methylimidazole),使其於氮氣氣氛、160°C、常壓的環境下進行約2小時的乙醯化反應;接著,以每小時30°C的升溫速率升溫至320°C,再於此溫度條件下將壓力由760 torr緩慢下降至3 torr以下、溫度由320°C升溫至340°C;之後,提高攪拌功率、升壓、洩料、拉條、切粒,得到熔點約278°C、黏度 (@300°C)約45 Pa·s的液晶高分子樹脂。
《
液晶高分子膜
》
實施例
1
至
13
、比較例
1
至
5
:液晶高分子膜
選用如前述製備例1至3得到的液晶高分子樹脂作為原料,並大致上經由如下所述之方法分別製備得到實施例1至13及比較例1至5之液晶高分子膜。
首先,將液晶高分子樹脂投入螺桿直徑27毫米的押出機 (儀器型號:ZSE27,購自Leistritz)中加熱至300°C至320°C,再以每小時3.5公斤 (kg/hr)至10 kg/hr的餵料速度將液晶高分子樹脂自寬度500毫米的T模頭擠出,接著,通入距離T模頭約1至50毫米、溫度約250°C至320°C且直徑約35公分至45公分的二鑄膜輪間,以約20至60千牛頓 (kN)的力道壓出;接著,送至冷卻輪進行常溫冷卻後,獲得厚度50微米 (μm)的液晶高分子膜。
製備實施例1至13及比較例1至5之液晶高分子膜的製程差異主要在於:液晶高分子樹脂的種類、T模頭至鑄模輪輪面的距離、餵料速度及押出機溫度,各實施例及比較例所設定的製程參數分別列於下表1中。
表1:製備實施例1至13及比較例1至5之液晶高分子膜之製程參數。
製程參數 | ||||
樣品編號 | LCP樹脂 | T模頭至鑄模輪輪面的距離(mm) | 餵料速度(kg/hr) | 押出機溫度(°C) |
實施例1 | 製備例1 | 20 | 7.5 | 310 |
實施例2 | 製備例1 | 20 | 7.5 | 315 |
實施例3 | 製備例1 | 20 | 7.5 | 320 |
實施例4 | 製備例1 | 20 | 6.5 | 290 |
實施例5 | 製備例1 | 20 | 8.5 | 310 |
實施例6 | 製備例1 | 20 | 8.5 | 315 |
實施例7 | 製備例1 | 20 | 8.5 | 320 |
實施例8 | 製備例1 | 20 | 5.5 | 310 |
實施例9 | 製備例2 | 20 | 5.5 | 315 |
實施例10 | 製備例3 | 20 | 5.5 | 320 |
實施例11 | 製備例1 | 20 | 6.5 | 310 |
實施例12 | 製備例2 | 20 | 6.5 | 315 |
實施例13 | 製備例3 | 20 | 6.5 | 320 |
比較例1 | 製備例1 | 20 | 7.5 | 300 |
比較例2 | 製備例1 | 20 | 8.5 | 290 |
比較例3 | 製備例1 | 5 | 6.5 | 310 |
比較例4 | 製備例1 | 5 | 5.5 | 320 |
比較例5 | 製備例1 | 5 | 7.5 | 315 |
上述製備液晶高分子膜的方法僅用於列舉說明本創作之實施方式,所屬技術領域中具有通常知識者亦可選用積層體延伸法、吹脹法等習知方法製備液晶高分子膜。
於其中一實施態樣中,可於液晶高分子樹脂從T模頭擠出後,所屬技術領域中具有通常知識者可視需要將液晶高分子樹脂與二耐高溫膜一起通入二鑄模輪間,進一步形成三層的疊層結構,於室溫下再將耐高溫膜與液晶高分子樹脂剝離,得到本創作的液晶高分子膜。所述耐高溫膜可選用例如聚四氟乙烯膜 (poly(tetrafluoroethene) film,PTFE film)、聚醯亞胺膜 (polyimide film,PI film)、聚醚碸膜 (poly(ether sulfone) film,PES film),但並非僅限於此。
此外,所屬技術領域中具有通常知識者可視不同需求對所製得之液晶高分子膜進行如拋光、紫外線照射、電漿等後處理,但並非僅限於此。針對電漿後處理,亦可視不同需求於氮氣、氧氣或空氣氣氛、於減壓或常壓環境中施以1千瓦的電漿後處理,但並非僅限於此。
試驗例
1
:液晶高分子膜的粗糙度分析
本試驗例係將前述實施例1至13和比較例1至5所製得之液晶高分子膜作為待測樣品,利用雷射顯微鏡 (型號:LEXT OLS5000-SAF,購自Olympus,物鏡為MPLAPON-50xLEXT),以波長為405奈米的光源、50倍的物鏡倍率、1.0倍的光學變焦的條件下,於24±3°C之溫度、63±3%之相對溼度下觀察各待測樣品的表面型貌,並擷取其影像;待測樣品的Ra、Ry及Rz係根據JIS B 0601:1994之方法,並於分析的過程中,設定各待測樣品的評估長度 (evaluation length)為4毫米、設定截止值 (cutoff value,λc)為0.8毫米,計算得到各待測樣品之其中一表面的Ra、Ry及Rz,其結果如下表2所示。
實施例
1A
至
13A
:積層板
選用前述實施例1至13及比較例1至5之液晶高分子膜與市售銅箔疊合,分別製得如實施例1A至13A及比較例1A至5A的積層板。所述市售銅箔的商品型號及相關說明如下:
銅箔1:CF-T49A-HD2,購自福田金屬箔粉工業株式會社,其Rz約1.2 µm;
銅箔2:CF-H9A-HD2,購自福田金屬箔粉工業株式會社,其Rz約1.0 µm;
銅箔3:3EC-M2S-HTE-SP2,購自三井金屬礦業株式會社,其Rz約1.1 µm;及
銅箔4:TQ-M7-VSP,購自三井金屬礦業株式會社,其Rz約1.1 µm。
選用前述厚度約50 μm的液晶高分子膜及厚度約12 μm的二片市售銅箔,將前述液晶高分子膜和二片市售銅箔各自裁切為20 cm*20 cm的尺寸大小後,將液晶高分子膜疊置於二片市售銅箔之間;先以180°C之溫度、5 kg/cm
2之壓力持續壓合60秒,再以300°C之溫度、20 kg/cm
2之壓力持續壓合25分鐘,再降至常溫後得到一積層板。各積層板中液晶高分子膜和二片市售銅箔的樣品編號係如下表2所示。
於此,積層板之壓合方式並無特別的限制,所屬技術領域中具有通常知識者可選用例如線壓合或面壓合等習知技術完成壓合步驟;本創作可適用之壓合機台例如間歇式熱壓機、卷對卷型輥壓機、雙帶壓機等,但並非僅限於此。根據不同需求,所屬技術領域中具有通常知識者也可直接將液晶高分子膜和銅箔對齊後進行加溫、加壓步驟,完成面壓合之步驟。
於其他實施態樣中,所屬技術領域具有通常知識者亦可視不同需求選用例如濺射、電鍍、化學鍍、或蒸鍍等方式在液晶高分子膜上形成一金屬箔 (例如:銅箔)或液晶高分子膜與金屬箔之間的一連結層 (例如:膠、鎳層、鈷層、鉻層、或其合金層)。
試驗例
2
:積層板的剝離強度分析
本試驗例根據如IPC-TM-650 No.:2.4.9之測試方法,將前述實施例1A至13A和比較例1A至5A之積層板製成長度約228.6毫米、寬度約3.2毫米的蝕刻試片 (etched specimen),再將各蝕刻試片置於23±2°C之溫度、50±5%之相對溼度下放置24小時使其趨於穩定;接著,將各蝕刻試片用雙面膠黏貼至測試機台 (儀器型號:HT-9102,購自弘達儀器股份有限公司 (Hung Ta Instrument Co., Ltd.))的夾具上,再以50.8毫米/分鐘 (mm/min)的剝離速度剝離夾具上的蝕刻試片,並且持續記錄剝離過程中的剝離拉力。於此,剝離拉力應控制在測試機台可承受的15%至85%之範圍,剝離的長度至少應超過57.2毫米,並且忽略不計最初剝離6.4毫米的剝離拉力,其結果如下表2所示。
表2:實施例1至13及比較例1至5之液晶高分子膜的粗糙度分析結果以及實施例1A至13A及比較例1A至5A的積層板的銅箔樣品編號及其剝離強度。
液晶高分子膜 | 積層板 | |||||
樣品編號 | Rz/Ry | Ra (µm) | Rz (µm) | 樣品編號 | 銅箔編號 | 剝離強度 (kN/m) |
實施例1 | 0.483 | 0.029 | 0.506 | 實施例1A | 銅箔1 | 0.68 |
實施例2 | 0.548 | 0.034 | 0.534 | 實施例2A | 銅箔1 | 0.60 |
實施例3 | 0.606 | 0.041 | 0.826 | 實施例3A | 銅箔1 | 0.58 |
實施例4 | 0.422 | 0.092 | 0.793 | 實施例4A | 銅箔1 | 0.70 |
實施例5 | 0.361 | 0.057 | 1.186 | 實施例5A | 銅箔2 | 1.44 |
實施例6 | 0.476 | 0.026 | 0.390 | 實施例6A | 銅箔2 | 1.38 |
實施例7 | 0.553 | 0.036 | 0.735 | 實施例7A | 銅箔2 | 1.30 |
實施例8 | 0.492 | 0.031 | 0.856 | 實施例8A | 銅箔3 | 0.53 |
實施例9 | 0.532 | 0.032 | 0.547 | 實施例9A | 銅箔3 | 0.48 |
實施例10 | 0.566 | 0.033 | 0.602 | 實施例10A | 銅箔3 | 0.45 |
實施例11 | 0.495 | 0.037 | 0.864 | 實施例11A | 銅箔4 | 0.83 |
實施例12 | 0.530 | 0.035 | 0.609 | 實施例12A | 銅箔4 | 0.85 |
實施例13 | 0.567 | 0.037 | 0.591 | 實施例13A | 銅箔4 | 0.78 |
比較例1 | 0.829 | 0.088 | 1.562 | 比較例1A | 銅箔1 | 0.56 |
比較例2 | 0.896 | 0.122 | 1.839 | 比較例2A | 銅箔1 | 0.53 |
比較例3 | 0.685 | 0.043 | 0.717 | 比較例3A | 銅箔1 | 0.52 |
比較例4 | 0.632 | 0.057 | 1.049 | 比較例4A | 銅箔1 | 0.50 |
比較例5 | 0.814 | 0.034 | 0.442 | 比較例5A | 銅箔2 | 1.18 |
試驗例
3
:積層板的訊號損失分析
本試驗例係將前述實施例1A至13A和比較例1A至5A之積層板製成長度約100毫米、寬度約140毫米、阻抗約50歐姆 (Ω)的帶狀線試片 (strip line specimen),再使用微波網路分析儀 (儀器型號:8722ES,購自安捷倫科技 (Agilent Technology)公司)、探針 (型號:ACP40-250,購自Cascade Microtech公司)測定各試片在10 GHz下的訊號損失。
於下表3中,以實施例1至7及比較例1至5之液晶高分子膜與市售銅箔壓合所形成之積層板為例,評估實施例1A至7A及比較例1A至5A之積層板的訊號損失特性,其結果如下表3所示。
表3:實施例1A至7A及比較例1A至5A的積層板中液晶高分子膜與銅箔的相關說明及其訊號損失之分析結果。
液晶高分子膜 | 積層板 | |||||
樣品編號 | Rz/Ry | Ra (µm) | Rz (µm) | 樣品編號 | 銅箔編號 | 訊號損失 (dB) |
實施例1 | 0.483 | 0.029 | 0.506 | 實施例1A | 銅箔1 | -2.9 |
實施例2 | 0.548 | 0.034 | 0.534 | 實施例2A | 銅箔1 | -2.9 |
實施例3 | 0.606 | 0.041 | 0.826 | 實施例3A | 銅箔1 | -2.9 |
實施例4 | 0.422 | 0.092 | 0.793 | 實施例4A | 銅箔1 | -3.1 |
實施例5 | 0.361 | 0.057 | 1.186 | 實施例5A | 銅箔2 | -2.9 |
實施例6 | 0.476 | 0.026 | 0.390 | 實施例6A | 銅箔2 | -2.8 |
實施例7 | 0.553 | 0.036 | 0.735 | 實施例7A | 銅箔2 | -2.9 |
比較例1 | 0.829 | 0.088 | 1.562 | 比較例1A | 銅箔1 | -3.1 |
比較例2 | 0.896 | 0.122 | 1.839 | 比較例2A | 銅箔1 | -3.1 |
比較例3 | 0.685 | 0.043 | 0.717 | 比較例3A | 銅箔1 | -3.0 |
比較例4 | 0.632 | 0.057 | 1.049 | 比較例4A | 銅箔1 | -2.9 |
比較例5 | 0.814 | 0.034 | 0.442 | 比較例5A | 銅箔2 | -2.9 |
實驗結果討論
如上表2所示,實施例1至13之液晶高分子膜其中一表面的Rz/Ry皆控制在0.30至0.62,故此種液晶高分子膜與各種市售之低粗糙度銅箔壓合所形成的積層板 (實施例1A至13A)皆能展現高的剝離強度。又如上表3之結果,以實施例1A至7A之積層板的測試結果為例,當液晶高分子膜其中一表面的Rz/Ry控制在0.30至0.62,實施例1A至7A之積層板的訊號損失也能控制在-3.1 dB以下。
進一步探討表2所示結果,比較含有銅箔1之積層板的實驗結果,相較於比較例1至4之液晶高分子膜,實施例1至4之液晶高分子膜皆展現較高的剝離強度;同樣的,比較含有銅箔2之積層板的實驗結果,相較於比較例5之液晶高分子膜,實施例5至7之液晶高分子膜皆展現較高的剝離強度。清楚地,選用本創作之液晶高分子膜製備積層板,確實具有提升剝離強度的功效,故能有利於加工、有效避免後續發生如線路脫落的問題。
再者,由實施例1A至7A之積層板的測試結果可見,當液晶高分子膜其中一表面的Rz/Ry控制在0.30至0.62之範圍且其Ra亦控制在0.09 µm以下時,選用此種液晶高分子膜與銅箔壓合能夠在提升積層板 (實施例1A至3A及5A至7A)之剝離強度的前提下,進一步控制積層板的訊號損失在-2.9 dB以下,提供同時展現高剝離強度與低訊號損失的積層板。
綜上所述,本創作藉由控制液晶高分子膜至少一表面的Rz/Ry係0.30至0.62,能具體提升液晶高分子膜與金屬箔疊合的剝離強度。此外,合併控制液晶高分子膜至少一表面的Rz/Ry以及Ra之特性,不僅能提升積層板的剝離強度,更能進一步降低積層板的訊號損失,致使本創作之積層板更加適用於高階的5G產品中。
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Claims (10)
- 一種液晶高分子膜,其具有相對的第一表面和第二表面,該第一表面的十點平均粗糙度相對於最大高度的比值為0.30至0.62。
- 如請求項1所述之液晶高分子膜,其中該第一表面的算術平均粗糙度小於或等於0.09微米。
- 如請求項2所述之液晶高分子膜,其中該第一表面的算術平均粗糙度為0.02微米至0.08微米。
- 如請求項1所述之液晶高分子膜,其中該第一表面的十點平均粗糙度小於或等於2微米。
- 如請求項4所述之液晶高分子膜,其中該第一表面的十點平均粗糙度小於或等於1.5微米。
- 如請求項1所述之液晶高分子膜,其中該第一表面的十點平均粗糙度相對於最大高度的比值為0.36至0.61。
- 如請求項1至6中任一項所述之液晶高分子膜,其中該第二表面的十點平均粗糙度相對於最大高度的比值為0.30至0.62。
- 如請求項7所述之液晶高分子膜,其中該第二表面的算術平均粗糙度小於或等於0.09微米。
- 一種積層板,其包含第一金屬箔及如請求項1至8中任一項所述之液晶高分子膜,該第一金屬箔係設置於該液晶高分子膜的該第一表面上。
- 如請求項9所述之積層板,其中該積層板具有第二金屬箔,該第二金屬箔係設置於該液晶高分子膜的該第二表面上。
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TW108147226A TWI697549B (zh) | 2019-12-23 | 2019-12-23 | 液晶高分子膜及包含其之積層板 |
CN202010073759.8A CN113096900A (zh) | 2019-12-23 | 2020-01-22 | 液晶高分子膜及包含其的积层板 |
US16/748,846 US20210189075A1 (en) | 2019-12-23 | 2020-01-22 | Liquid crystal polymer film and laminate comprising the same |
JP2020021487A JP6804673B1 (ja) | 2019-12-23 | 2020-02-12 | 液晶高分子膜およびこれを含む積層板 |
KR1020200044558A KR102197515B1 (ko) | 2019-12-23 | 2020-04-13 | 액정 폴리머 필름 및 이를 포함하는 라미네이트 |
JP2020199487A JP7372898B2 (ja) | 2019-12-23 | 2020-12-01 | 液晶高分子膜 |
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TW202124678A (zh) | 2021-07-01 |
US20220032575A1 (en) | 2022-02-03 |
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