TWI697040B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

Info

Publication number: TWI697040B
Authority: TW; Taiwan
Prior art keywords: wafer; laser beam; pulsed laser; modified layer; wavelength
Prior art date: 2014-09-03

Application number

TW104124517A

Other languages

English (en)

Chinese (zh)

Other versions

TW201611109A (zh

Inventor

古田健次

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-09-03

Filing date

2015-07-29

Publication date

2020-06-21

2015-07-29 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2016-03-16 Publication of TW201611109A publication Critical patent/TW201611109A/zh

2020-06-21 Application granted granted Critical

2020-06-21 Publication of TWI697040B publication Critical patent/TWI697040B/zh

Links

238000003672 processing method Methods 0.000 title claims abstract description 18
230000007246 mechanism Effects 0.000 claims abstract description 52
229910052710 silicon Inorganic materials 0.000 claims abstract description 16
239000010703 silicon Substances 0.000 claims abstract description 16
238000000034 method Methods 0.000 claims abstract description 9
230000015572 biosynthetic process Effects 0.000 claims description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
238000002407 reforming Methods 0.000 abstract description 8
230000000149 penetrating effect Effects 0.000 abstract description 6
230000001678 irradiating effect Effects 0.000 abstract description 5
208000033999 Device damage Diseases 0.000 abstract 1
235000012431 wafers Nutrition 0.000 description 89
238000001514 detection method Methods 0.000 description 7
239000004065 semiconductor Substances 0.000 description 7
230000003287 optical effect Effects 0.000 description 6
238000010521 absorption reaction Methods 0.000 description 4
238000003384 imaging method Methods 0.000 description 4
238000003331 infrared imaging Methods 0.000 description 3
238000003754 machining Methods 0.000 description 3
230000004048 modification Effects 0.000 description 3
238000012986 modification Methods 0.000 description 3
230000015556 catabolic process Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
239000000155 melt Substances 0.000 description 2
230000000704 physical effect Effects 0.000 description 2
229910052779 Neodymium Inorganic materials 0.000 description 1
239000006061 abrasive grain Substances 0.000 description 1
239000010432 diamond Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
230000000644 propagated effect Effects 0.000 description 1
230000001902 propagating effect Effects 0.000 description 1
239000011347 resin Substances 0.000 description 1
229920005989 resin Polymers 0.000 description 1
230000003068 static effect Effects 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Power Engineering (AREA)
High Energy & Nuclear Physics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Dicing (AREA)
Laser Beam Processing (AREA)

TW104124517A 2014-09-03 2015-07-29 晶圓的加工方法 TWI697040B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2014-179218		2014-09-03
JP2014179218A JP2016054204A (ja)	2014-09-03	2014-09-03	ウエーハの加工方法

Publications (2)

Publication Number	Publication Date
TW201611109A TW201611109A (zh)	2016-03-16
TWI697040B true TWI697040B (zh)	2020-06-21

Family

ID=55422537

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW104124517A TWI697040B (zh)	2014-09-03	2015-07-29	晶圓的加工方法

Country Status (4)

Country	Link
JP (1)	JP2016054204A (ja)
KR (1)	KR20160028376A (ja)
CN (1)	CN105390380A (ja)
TW (1)	TWI697040B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7039238B2 (ja) *	2017-10-03	2022-03-22	株式会社ディスコ	レーザー照射機構

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW200613081A (en) *	2004-08-06	2006-05-01	Hamamatsu Photonics Kk	Laser processing method and semiconductor chip
CN1779914A (zh) *	2004-10-07	2006-05-31	株式会社迪斯科	硅晶片激光加工方法和激光束加工装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4684544B2 (ja)	2003-09-26	2011-05-18	株式会社ディスコ	シリコンから形成された半導体ウエーハの分割方法及び装置
JP4402708B2 (ja)	2007-08-03	2010-01-20	浜松ホトニクス株式会社	レーザ加工方法、レーザ加工装置及びその製造方法
JP5468847B2 (ja) *	2009-08-28	2014-04-09	株式会社ディスコ	ウエーハのレーザー加工方法
JP5968150B2 (ja) *	2012-08-03	2016-08-10	株式会社ディスコ	ウエーハの加工方法
JP6068882B2 (ja) *	2012-09-05	2017-01-25	株式会社ディスコ	レーザー加工装置

2014
- 2014-09-03 JP JP2014179218A patent/JP2016054204A/ja active Pending
2015
- 2015-07-29 TW TW104124517A patent/TWI697040B/zh active
- 2015-08-28 CN CN201510541003.0A patent/CN105390380A/zh active Pending
- 2015-08-28 KR KR1020150121608A patent/KR20160028376A/ko not_active Application Discontinuation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW200613081A (en) *	2004-08-06	2006-05-01	Hamamatsu Photonics Kk	Laser processing method and semiconductor chip
CN1779914A (zh) *	2004-10-07	2006-05-31	株式会社迪斯科	硅晶片激光加工方法和激光束加工装置

Also Published As

Publication number	Publication date
JP2016054204A (ja)	2016-04-14
TW201611109A (zh)	2016-03-16
KR20160028376A (ko)	2016-03-11
CN105390380A (zh)	2016-03-09

Publication	Publication Date	Title
TW201635357A (zh)	2016-10-01	晶圓的加工方法
TWI653114B (zh)	2019-03-11	晶圓的加工方法
TW201635358A (zh)	2016-10-01	晶圓的加工方法
JP6308919B2 (ja)	2018-04-11	ウエーハの加工方法
JP6320261B2 (ja)	2018-05-09	ウエーハの加工方法
JP2016054205A (ja)	2016-04-14	ウエーハの加工方法
TW201625374A (zh)	2016-07-16	晶圓的加工方法
JP2016042516A (ja)	2016-03-31	ウエーハの加工方法
JP2016076523A (ja)	2016-05-12	ウエーハの加工方法
TWI697040B (zh)	2020-06-21	晶圓的加工方法
JP2016076522A (ja)	2016-05-12	ウエーハの加工方法
TWI685886B (zh)	2020-02-21	晶圓的加工方法
JP6293017B2 (ja)	2018-03-14	ウエーハの加工方法
JP6308913B2 (ja)	2018-04-11	ウエーハの加工方法
JP2016058429A (ja)	2016-04-21	ウエーハの加工方法
JP2017092127A (ja)	2017-05-25	ウエーハの加工方法
TWI694507B (zh)	2020-05-21	晶圓的加工方法
JP2016072274A (ja)	2016-05-09	ウエーハの加工方法
JP2016058430A (ja)	2016-04-21	ウエーハの加工方法
JP2016054203A (ja)	2016-04-14	ウエーハの加工方法
JP2016054202A (ja)	2016-04-14	ウエーハの加工方法
JP2016072278A (ja)	2016-05-09	ウエーハの加工方法
JP2016058431A (ja)	2016-04-21	ウエーハの加工方法
JP2016072275A (ja)	2016-05-09	ウエーハの加工方法
JP2016072277A (ja)	2016-05-09	ウエーハの加工方法