CN105390380A - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

Info

Publication number: CN105390380A
Authority: CN; China
Prior art keywords: wafer; laser beam; pulse laser; upgrading layer; segmentation
Prior art date: 2014-09-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

CN201510541003.0A

Other languages

English (en)

Chinese (zh)

Inventor

古田健次

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Disco Corp

Original Assignee

Disco Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-09-03

Filing date

2015-08-28

Publication date

2016-03-09

2015-08-28 Application filed by Disco Corp filed Critical Disco Corp

2016-03-09 Publication of CN105390380A publication Critical patent/CN105390380A/zh

Status Pending legal-status Critical Current

Links

238000003672 processing method Methods 0.000 title claims abstract description 18
230000011218 segmentation Effects 0.000 claims description 29
230000007246 mechanism Effects 0.000 claims description 27
229910052710 silicon Inorganic materials 0.000 claims description 16
239000010703 silicon Substances 0.000 claims description 16
238000000034 method Methods 0.000 claims description 12
230000035699 permeability Effects 0.000 claims description 7
230000015572 biosynthetic process Effects 0.000 claims description 5
238000005286 illumination Methods 0.000 claims description 3
238000012986 modification Methods 0.000 abstract 4
230000004048 modification Effects 0.000 abstract 4
235000012431 wafers Nutrition 0.000 description 81
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
230000014759 maintenance of location Effects 0.000 description 10
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238000001514 detection method Methods 0.000 description 5
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229910052779 Neodymium Inorganic materials 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000003331 infrared imaging Methods 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
238000009413 insulation Methods 0.000 description 2
238000003754 machining Methods 0.000 description 2
238000002844 melting Methods 0.000 description 2
230000008018 melting Effects 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000005855 radiation Effects 0.000 description 2
230000003068 static effect Effects 0.000 description 2
150000001206 Neodymium Chemical class 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
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238000003384 imaging method Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
230000008520 organization Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
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239000011347 resin Substances 0.000 description 1
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150000003376 silicon Chemical class 0.000 description 1
230000002459 sustained effect Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Power Engineering (AREA)
High Energy & Nuclear Physics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Dicing (AREA)
Laser Beam Processing (AREA)

CN201510541003.0A 2014-09-03 2015-08-28 晶片的加工方法 Pending CN105390380A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2014-179218		2014-09-03
JP2014179218A JP2016054204A (ja)	2014-09-03	2014-09-03	ウエーハの加工方法

Publications (1)

Publication Number	Publication Date
CN105390380A true CN105390380A (zh)	2016-03-09

Family

ID=55422537

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201510541003.0A Pending CN105390380A (zh)	2014-09-03	2015-08-28	晶片的加工方法

Country Status (4)

Country	Link
JP (1)	JP2016054204A (ja)
KR (1)	KR20160028376A (ja)
CN (1)	CN105390380A (ja)
TW (1)	TWI697040B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7039238B2 (ja) *	2017-10-03	2022-03-22	株式会社ディスコ	レーザー照射機構

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN1779914A (zh) *	2004-10-07	2006-05-31	株式会社迪斯科	硅晶片激光加工方法和激光束加工装置
CN101434010A (zh) *	2004-08-06	2009-05-20	浜松光子学株式会社	激光加工方法及半导体装置
JP2011049454A (ja) *	2009-08-28	2011-03-10	Disco Abrasive Syst Ltd	ウエーハのレーザー加工方法
JP2014033116A (ja) *	2012-08-03	2014-02-20	Disco Abrasive Syst Ltd	ウエーハの加工方法
CN103659003A (zh) *	2012-09-05	2014-03-26	株式会社迪思科	激光加工装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4684544B2 (ja)	2003-09-26	2011-05-18	株式会社ディスコ	シリコンから形成された半導体ウエーハの分割方法及び装置
JP4402708B2 (ja)	2007-08-03	2010-01-20	浜松ホトニクス株式会社	レーザ加工方法、レーザ加工装置及びその製造方法

2014
- 2014-09-03 JP JP2014179218A patent/JP2016054204A/ja active Pending
2015
- 2015-07-29 TW TW104124517A patent/TWI697040B/zh active
- 2015-08-28 CN CN201510541003.0A patent/CN105390380A/zh active Pending
- 2015-08-28 KR KR1020150121608A patent/KR20160028376A/ko not_active Application Discontinuation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN101434010A (zh) *	2004-08-06	2009-05-20	浜松光子学株式会社	激光加工方法及半导体装置
CN1779914A (zh) *	2004-10-07	2006-05-31	株式会社迪斯科	硅晶片激光加工方法和激光束加工装置
JP2011049454A (ja) *	2009-08-28	2011-03-10	Disco Abrasive Syst Ltd	ウエーハのレーザー加工方法
JP2014033116A (ja) *	2012-08-03	2014-02-20	Disco Abrasive Syst Ltd	ウエーハの加工方法
CN103659003A (zh) *	2012-09-05	2014-03-26	株式会社迪思科	激光加工装置

Also Published As

Publication number	Publication date
TWI697040B (zh)	2020-06-21
JP2016054204A (ja)	2016-04-14
TW201611109A (zh)	2016-03-16
KR20160028376A (ko)	2016-03-11

Legal Events

Date	Code	Title	Description
2016-03-09	C06	Publication
2016-03-09	PB01	Publication
2017-09-01	SE01	Entry into force of request for substantive examination
2017-09-01	SE01	Entry into force of request for substantive examination
2020-06-02	WD01	Invention patent application deemed withdrawn after publication	Application publication date: 20160309
2020-06-02	WD01	Invention patent application deemed withdrawn after publication

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