TWI679713B - 半導體基板處理設備之真空室的調節方法 - Google Patents
半導體基板處理設備之真空室的調節方法 Download PDFInfo
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- TWI679713B TWI679713B TW104123969A TW104123969A TWI679713B TW I679713 B TWI679713 B TW I679713B TW 104123969 A TW104123969 A TW 104123969A TW 104123969 A TW104123969 A TW 104123969A TW I679713 B TWI679713 B TW I679713B
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- Prior art keywords
- vacuum chamber
- semiconductor substrate
- reactant
- gas
- plasma
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 59
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- 239000000376 reactant Substances 0.000 claims abstract description 105
- 229920000620 organic polymer Polymers 0.000 claims abstract description 57
- 238000011010 flushing procedure Methods 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 150000004985 diamines Chemical class 0.000 claims abstract description 8
- 150000002009 diols Chemical class 0.000 claims abstract description 7
- 150000003573 thiols Chemical class 0.000 claims abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 6
- 239000006227 byproduct Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
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- 230000008021 deposition Effects 0.000 claims description 40
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- 238000000231 atomic layer deposition Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000005137 deposition process Methods 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- 239000002052 molecular layer Substances 0.000 claims description 7
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- 239000001301 oxygen Substances 0.000 claims description 6
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- CTSLXHKWHWQRSH-UHFFFAOYSA-N oxalyl chloride Chemical compound ClC(=O)C(Cl)=O CTSLXHKWHWQRSH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 claims description 4
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 claims description 4
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 claims description 2
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 claims description 2
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- 125000003277 amino group Chemical group 0.000 claims description 2
- MRNZSTMRDWRNNR-UHFFFAOYSA-N bis(hexamethylene)triamine Chemical compound NCCCCCCNCCCCCCN MRNZSTMRDWRNNR-UHFFFAOYSA-N 0.000 claims description 2
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- MGNCLNQXLYJVJD-UHFFFAOYSA-N cyanuric chloride Chemical compound ClC1=NC(Cl)=NC(Cl)=N1 MGNCLNQXLYJVJD-UHFFFAOYSA-N 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
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- YVOFTMXWTWHRBH-UHFFFAOYSA-N pentanedioyl dichloride Chemical compound ClC(=O)CCCC(Cl)=O YVOFTMXWTWHRBH-UHFFFAOYSA-N 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
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- 229920000166 polytrimethylene carbonate Polymers 0.000 claims description 2
- ZJLMKPKYJBQJNH-UHFFFAOYSA-N propane-1,3-dithiol Chemical compound SCCCS ZJLMKPKYJBQJNH-UHFFFAOYSA-N 0.000 claims description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
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- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 3
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims 2
- OFHQVNFSKOBBGG-UHFFFAOYSA-N 1,2-difluoropropane Chemical compound CC(F)CF OFHQVNFSKOBBGG-UHFFFAOYSA-N 0.000 claims 1
- BTYXTUDAHJLECB-UHFFFAOYSA-N 3-aminopropane-1,2-diol Chemical compound NCC(O)CO.NCC(O)CO BTYXTUDAHJLECB-UHFFFAOYSA-N 0.000 claims 1
- NWEZOFJLJZDCBU-UHFFFAOYSA-N C(C(CCO)O)O.C(C(CCO)O)O Chemical compound C(C(CCO)O)O.C(C(CCO)O)O NWEZOFJLJZDCBU-UHFFFAOYSA-N 0.000 claims 1
- DPRMFUAMSRXGDE-UHFFFAOYSA-N ac1o530g Chemical group NCCN.NCCN DPRMFUAMSRXGDE-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- IRXBNHGNHKNOJI-UHFFFAOYSA-N butanedioyl dichloride Chemical compound ClC(=O)CCC(Cl)=O IRXBNHGNHKNOJI-UHFFFAOYSA-N 0.000 claims 1
- 238000004891 communication Methods 0.000 claims 1
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- 238000010438 heat treatment Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000010408 film Substances 0.000 description 63
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000005234 chemical deposition Methods 0.000 description 8
- -1 bromine halides Chemical class 0.000 description 6
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
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- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ARXKVVRQIIOZGF-UHFFFAOYSA-N 1,2,4-butanetriol Chemical compound OCCC(O)CO ARXKVVRQIIOZGF-UHFFFAOYSA-N 0.000 description 1
- KQIGMPWTAHJUMN-UHFFFAOYSA-N 3-aminopropane-1,2-diol Chemical compound NCC(O)CO KQIGMPWTAHJUMN-UHFFFAOYSA-N 0.000 description 1
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- 238000004590 computer program Methods 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- XYXCXCJKZRDVPU-UHFFFAOYSA-N hexane-1,2,3-triol Chemical compound CCCC(O)C(O)CO XYXCXCJKZRDVPU-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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Abstract
一種半導體基板處理設備之真空室的調節方法包含在真空室之電漿或處理氣體暴露表面上形成一層有機聚合膜。該方法包含:(a)使第一反應物以二醯基氯化物(diacyl chloride)之氣相流動至真空室內;(b)第一反應物之流動停止後沖洗真空室;(c)使第二反應物以氣相流動至真空室內,使得在真空室之電漿或處理氣體暴露表面上形成一層有機聚合膜,該第二反應物係選自由二元胺(diamine)、二元醇(diol)、硫醇(thiol)、及三官能化合物(trifunctional compound)組成的群組;以及(d)沖洗真空室,以從真空室沖洗多餘的第二反應物和反應副產物。
Description
本發明相關於藉由原子層沉積和/或分子層沉積所形成的塗膜,且可在半導體基板處理設備之真空室的腔室元件之電漿或處理氣體暴露表面的塗佈中找到特定用途。
半導體基板處理設備係用來在其真空室內藉由包含以下者的技術處理半導體基板(此處也可指基板、半導體晶圓、或晶圓):蝕刻、物理氣相沉積(PVD,physical vapor deposition)、化學氣相沉積(CVD,chemical vapor deposition)、電漿加強化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)、原子層沉積(ALD,atomic layer deposition)、電漿加強原子層沉積(PEALD,plasma enhanced atomic layer deposition)、脈衝沉積層(PDL,pulsed deposition layer)、分子層沉積(MLD,molecular layer deposition)、電漿加強分子層沉積(PEMLD,plasma enhanced molecular layer deposition)、保形膜沉積(CFD,conformal film deposition)、電漿加強脈衝沉積層(PEPDL,plasma enhanced pulsed deposition layer)處理、以及光阻移除。半導體基板處理設備(例如,前面提到的處理設備)可包含真空室之複數暴露表面,該複數暴露表面係在半導體基板處理期間暴露於電漿和/或處理氣體。真空室之電漿或處理氣體暴露表面可能在半導體基板的處理期間釋放有害污染物,且可能污染受處理之半導體基板。舉例而
言,真空室之腔室元件的電漿或處理氣體暴露表面可能排出如鋁(Al)、鐵(Fe)、鈉(Na)、銅(Cu)、及類似者的不期望元素氣體。這些污染物因為與引入腔室之處理氣體或腔室內產生之電漿的化學反應,可能從真空室元件之電漿或處理氣體暴露表面釋放。舉例而言,使用鹵素氣體(例如,氯(Cl)、溴(Br)、碘(I)、及類似者)的原子層沉積(ALD,atomic layer deposition)處理可能從真空室元件之電漿或處理氣體暴露表面提取金屬(例如Cu、Na、和Fe),並且可能導致半導體基板處理設備之真空室內半導體基板上所沉積膜的金屬污染。
一種半導體基板處理設備之真空室的調節方法係於此處揭露,基板係在該半導體基板處理設備中受處理。真空室的調節方法包含在真空室之電漿或處理氣體暴露表面上形成一層有機聚合膜。該層有機聚合膜的形成方法包含:(a)使第一反應物以二醯基氯化物(diacyl chloride)之氣相流動至真空室內,並且允許第一反應物吸附至真空室之電漿或處理氣體暴露表面上;(b)第一反應物之流動停止後利用沖洗氣體沖洗真空室,以從真空室沖洗多餘的第一反應物;(c)使第二反應物以氣相流動至真空室內,第一和第二反應物在該真空室內發生反應,使得在真空室之電漿或處理氣體暴露表面上形成一層有機聚合膜,該第二反應物係選自由二元胺(diamine)、二元醇(diol)、硫醇(thiol)、及三官能化合物(trifunctional compound)組成的群組;以及(d)第二反應物之流動停止後利用沖洗氣體沖洗真空室,以從真空室沖洗多餘的第二反應物和反應副產物。
包含真空室之半導體基板處理設備也於此處揭露,該真空室包含於其內處理半導體基板的處理區域。半導體基板處理設備包含供應處理氣體至真
空室的質流控制器和操作該質流控制器的控制器。質流控制器係用以供應第一反應物氣體、第二反應物氣體、和沖洗氣體,使得在真空室之電漿或處理氣體暴露表面上形成有機聚合膜,並且供應於半導體基板上沉積膜的處理氣體。控制器係用以操作質流控制器,以進行真空室之電漿或處理氣體暴露表面上有機聚合膜的形成。控制器係進一步用以操作質流控制器,以進行真空室內半導體基板上膜的沉積。
13‧‧‧基板
201‧‧‧真空室
202‧‧‧LF RF產生器
203‧‧‧氣體管線
204‧‧‧HF RF產生器
206‧‧‧匹配網路
209‧‧‧真空源
211‧‧‧噴淋頭模組
220‧‧‧加熱器塊
223‧‧‧基座模組
228‧‧‧控制器
235‧‧‧真空管線
300‧‧‧電漿或處理氣體暴露表面
302‧‧‧質流控制器
318‧‧‧處理區域
圖1說明根據此處所揭露實施例顯示化學沉積設備之相關基本特徵的示意圖。
圖2說明描述化學沉積設備之各種設備元件的方塊圖,該化學沉積設備用以實施此處所揭露實施例,其中可利用電漿以加強沉積。
圖3顯示在真空室之電漿或處理氣體暴露表面上形成一層有機聚合膜之步驟的處理示意圖。
圖4顯示沉積至試樣表面上之反應物的飽和百分比之圖表。
圖5顯示沉積至試樣表面上之反應物的飽和百分比之圖表。
圖6顯示根據此處所揭露實施例每約100個沉積循環之時間的質量變化之圖表,該沉積循環為在試樣上形成有機聚合膜之沉積循環。
圖7顯示圖6圖表之一部分的分解圖。
圖8顯示根據此處所揭露實施例所沉積的有機聚合膜的組成。
在以下詳述中,提出許多具體實施例,以提供對此處所揭露設備和方法的透徹理解。然而,正如熟悉本技術領域者所明白,本實施例可在沒有這
些具體細節的情況下或藉由使用替代的元件或製程而實施。在其它情況下,廣為周知的製程、程式步驟、和/或元件並未詳細描述,以免不必要地模糊此處所揭露實施例之態樣。此處所使用的用語「約」指±10%。
本實施例提供調節半導體基板處理設備之真空室的電漿或處理氣體暴露表面的方法和設備,其中調節包含在真空室之電漿或處理氣體暴露表面上形成有機聚合膜。此處所揭露之半導體基板處理設備和方法尤其適用於結合化學沉積設備或電漿加強化學沉積設備之化學沉積真空室(此處用作「真空室」)的使用,其中可執行使用自我限制沉積步驟的半導體製造沉積製程。據此,此處所揭露方法之實施例可在半導體基板處理設備(例如原子層沉積(ALD,atomic layer deposition)設備、電漿加強原子層沉積(PEALD,plasma enhanced atomic layer deposition)設備、脈衝沉積層(PDL,pulsed deposition layer)設備、電漿加強脈衝沉積層(PEPDL,plasma enhanced pulsed deposition layer)設備、保形膜沉積(CFD,conformal film deposition)設備、分子層沉積(MLD,molecular layer deposition)設備、電漿加強分子層沉積(PEMLD,plasma enhanced molecular layer deposition)設備))中執行,然而它們並非如此受限制。舉例而言,進一步的半導體基板處理設備可包含電漿蝕刻設備、物理氣相沉積(PVD,physical vapor deposition)設備、化學氣相沉積(CVD,chemical vapor deposition)設備、以及光阻移除設備,在其中可執行此處所揭露方法之實施例。
圖1為根據此處所揭露實施例顯示化學沉積真空室201(真空室)之概述的示意圖,其中真空室201之電漿或處理氣體暴露表面300根據此處所揭露實施例可包含有機聚合膜。半導體基板13坐落於可移除基座模組223之上,該基座模組223可相對於噴淋頭模組211而升高或降低,該噴淋頭模組211也可垂直移
動。反應物材料氣體係藉由氣體管線203而引入真空室201之處理區域318,其中質流控制器302可控制引入真空室201之處理區域318內之反應物材料氣體的流動。舉例而言,質流控制器302既可較佳地供應用以處理半導體基板的處理氣體至真空室201,也可供應用以在真空室201之電漿或處理氣體暴露表面300上形成有機聚合膜的反應物氣體。注意到可根據所使用之反應物氣體的數量而將設備變更成具有一或更多氣體管線。腔室係透過連接至真空源209的真空管線235而抽空。真空源209可為可操作成將反應物、處理氣體、和反應副產物自真空室201抽空的真空泵浦。
此處所揭露實施例係較佳地在電漿加強化學沉積設備(亦即,PECVD設備、PEALD設備、PEMLD設備、CFD設備、或PEPDL設備)中實施。圖2提供描述用以實施此處所揭露實施例之各種設備元件的簡單方塊圖,其中利用電漿來加強電漿加強化學沉積真空室201內的沉積。如所示,真空室201之處理區域318用以包含由電容耦合電漿系統產生的電漿,該系統包含與基座模組223結合工作的噴淋頭模組211,其中基座模組223受加熱。反應物材料氣體係藉由質流控制器302透過氣體管線203而引入真空室201之處理區域318。RF源/複數RF源(例如,至少一個連接至匹配網路206的高頻(HF,high-frequency)RF產生器204、以及可選的低頻(LF,low-frequency)RF產生器202)係連接至噴淋頭模組211。在一替代實施例中,HF RF產生器204可連接至基座模組223。由匹配網路206所供應之功率和頻率足以自處理氣體/蒸汽產生電漿。在一實施例中使用HF RF產生器204和LF RF產生器202兩者,以及在一替代實施例中,僅使用HF RF產生器204。在一典型製程中,HF RF產生器204一般在約2-100MHz的頻率運作,在一較佳實施例中,HF RF產生器204在13.56MHz或27MHz頻率下運作。LF RF產生
器202一般在約50kHz至2MHz運作,在一較佳實施例中,LF RF產生器202在約350至600kHz運作。製程參數可基於真空室201的容積、基板尺寸、和其他因素而按比例縮放。相似地,處理氣體之流動速率可取決於真空室201和/或處理區域318之自由容積。
在真空室201之內,基座模組223支撐可於其上沉積如薄膜之材料的半導體基板13。基座模組223可包含叉或抬升銷,以在沉積和/或電漿處理反應期間及之間固持與傳送半導體基板。在一實施例中,半導體基板13可配置為置於基座模組223之表面上,然而在替代實施例中,基座模組223可包含靜電卡盤、機械卡盤、或真空卡盤,以將半導體基板13固持在基座模組223的表面上。基座模組223可耦接至加熱器塊220以將半導體基板13加熱至期望溫度。一般來說,半導體基板13係維持在約25℃至500℃之溫度,或者依據所要沉積之材料而更高。
在一實施例中,控制器228係用於在以下者期間控制處理條件:在真空室之電漿或處理氣體暴露表面300上形成有機聚合膜的方法、沉積、後沉積處理、和/或其他處理運作。典型地,控制器228將包含一或更多記憶體裝置及一或更多處理器。處理器可包含CPU或電腦、類比和/或數位輸入/輸出連接端、步進式馬達控制板等。
在一實施例中,控制器228控制設備的所有活動。控制器228執行包含複數組指令的系統控制軟體,該複數組指令用以控制特定處理之處理操作之時序、LF RF產生器202及HF RF產生器204之運作的頻率和功率、前驅物及惰性氣體及它們的相對混合物之流動速率和溫度、加熱器塊220及噴淋頭模組211之溫度、腔室之壓力、和其他參數。儲存在與控制器相關聯之記憶體設備上的其他電腦程式可用於一些實施例中。
可有一使用者介面與控制器228相關聯。該使用者介面可包含顯示螢幕、設備和/或處理條件之圖形軟體顯示、以及如指向裝置、鍵盤、觸控螢幕、麥克風等之使用者輸入裝置。
非暫態電腦機器可讀媒體可包含用以控制設備的程式指令。用以控制處理操作的電腦程式碼可以任何習知的電腦可讀程式語言撰寫:例如組合語言、C、C++、Pascal、Fortran、或其他。所編寫之目標碼或腳本係藉由處理器執行,以執行程式中識別的任務。
控制器228的參數與處理條件(例如處理步驟之時序、前驅物及惰性氣體之流動速率和溫度、晶圓之溫度、腔室之壓力及特定處理之其他參數)有關。這些參數係以配方的形式提供給使用者,且可利用使用者介面輸入。
用以監控該處理的信號可藉由系統控制器之類比和/或數位輸入連接端提供。用以控制該處理的信號係在設備之類比和數位輸出連接端輸出。
系統軟體可以許多不同的方式進行設計或配置。例如,可撰寫各種腔室元件次常規或控制目標,以控制對於實施沉積製程所必需的腔室元件之操作。針對此目的之程式和程式區段的例子包含處理步驟之半導體基板時序碼、前驅物和惰性氣體之流動速率和溫度碼、以及真空室之壓力碼。
對於沉積膜而言,使用與半導體基板周圍環境(亦即,真空室之電漿暴露或處理氣體暴露表面,如腔室壁、噴淋頭、晶圓基座等)發生反應的化學品可能導致金屬污染物嵌入半導體基板上所沉積的膜內。這些污染是由於組成真空室環境的材料(亦即,陶瓷、金屬等)與用來沉積膜的沉積化學品之間的化學反應而發生。如此處所揭露之實施例中,真空室的頂端、基底、和側壁可由適於半導體處理運作的任何材料建構,例如金屬材料、陶瓷材料或石英材料。舉例
而言,真空室之電漿或處理氣體暴露表面可由鋁、矽、氧化鋁、藍寶石、氧化矽、石英、氮化矽、或碳化矽形成。進一步而言,此處所使用的「金屬」包含金屬的元素形式和合金形式。例如,金屬材料可為裸金屬或塗佈金屬,例如鋁、陽極鋁、鎳、鎳合金、不鏽鋼、或其他具有或不具一或更多材料塗佈的合適金屬材料(例如氧化釔(yttria)和氧化鋯)。陶瓷可包含氧化物材料、碳化物材料、和/或氮化物材料,例如氧化鋁(鋁土)、氮化鋁(AlN)、氧化鋯、氧化釔、或其他合適的陶瓷材料。石英可為火焰熔融天然石英或石英之其他形式(例如,電弧熔融天然石英、或合成石英)。
在於半導體基板上沉積膜的沉積製程期間,所沉積膜的特性依賴於形成膜所使用的反應物(亦即,前驅物)。反應物的選擇除了是膜特性及組成的主要判定因素外,也是判定半導體基板處理製程之最終成本的因素。最具成本效益的反應物可包含鹵化物類(例如,氟鹵化物、氯鹵化物、溴鹵化物、碘鹵化物、或砈鹵化物)。如胺化物(例如,-N(CH3)2,-NH2)之替代反應物係使用鹵化物作為起始材料而合成,且平均比鹵化物貴約10倍。然而伴隨使用鹵化物反應物的問題是在沉積製程期間可能形成氯化氫(HCl)。在沉積製程期間所形成的HCl強勢地腐蝕真空室之電漿或處理氣體暴露金屬表面,並且形成金屬氯化物。舉例而言,電漿或處理氣體暴露表面可能與HCl發生反應,從而形成特別易揮發的AlCl3和/或FeCl2,並且在半導體基板的處理期間可導致真空室內半導體基板上所沉積膜的金屬污染。
因此,為預防腔室腐蝕,可執行有機膜沉積製程,其以高達每沉積循環約1nm之速率沉積有機聚合物材料之保形膜。在一實施例中,一個沉積循環係執行一次表面沉積反應所需的最小組操作。一個沉積循環的結果係生成所沉
積膜的一層。因此,不再需要之前於真空室內所使用的過長的預塗佈製程(例如,用以調節真空室之ALD預塗佈製程每沉積循環以約0.5至1Å的速率塗佈腔室表面)和/或昂貴的腔室襯套。因此,如此處所揭露之形成有機聚合膜的實施例可減少調節真空室所需的時間,並且預防於真空室內半導體基板上所沉積膜的金屬污染。
在一實施例中,一種半導體基板處理設備(半導體基板係於該設備中處理)之真空室的調節方法包含在真空室之電漿或處理氣體暴露表面上形成有機聚合膜。所形成之有機聚合膜可包含碳、氧、氫、氮、硫或其組合。較佳地,有機聚合膜僅包含碳、氧、氫,以及可選的氮和/或硫。在一實施例中,有機聚合膜較佳地不含鹵素(例如,氟)。在一實施例中,有機聚合膜不含矽。
為形成有機聚合膜,該方法之一個沉積循環可包含(a)使第一反應物以氣相流動至真空室內,在該真空室內允許第一反應物吸附至真空室之電漿或處理氣體暴露表面上。第一反應物較佳地是二醯基氯化物(diacyl chloride)。其次(b)第一反應物之流動停止後利用沖洗氣體沖洗真空室,以從真空室沖洗多餘的第一反應物。然後(c)使第二反應物以氣相流動至真空室內,在該真空室內第一和第二反應物發生反應,使得在真空室之電漿或處理氣體暴露表面上形成一層有機聚合膜。第二反應物較佳地是二元胺(diamine)、二元醇(diol)、硫醇(thiol)、或三官能化合物(trifunctional compound)。然後(d)在第二反應物之流動停止後利用沖洗氣體沖洗真空室,以從真空室沖洗多餘的第二反應物和反應副產物。
較佳地,重複用以形成一層有機聚合膜之沉積循環(a)-(d),使得有機聚合膜之複數疊層以一層疊在另一層上的方式形成,直至有機聚合膜達
到預定(期望)厚度。所形成之有機聚合膜的每一層的厚度可為約0.1至1nm,其中所形成之有機聚合膜的每一層之厚度取決於第一反應物和第二反應物流動至真空室內的時間長度,以及因此第一和第二反應物之每一者於真空室之電漿或處理氣體暴露表面上的飽和位準。較佳地,流動第一反應物至真空室內約0.1至10秒、流動第二反應物至真空室內約0.1至10秒、以及執行第一或第二反應物之沖洗約1至10秒,其中可在少於約1小時的時間內將真空室調節至於真空室之電漿或處理氣體暴露表面上包含有機聚合膜。在一實施例中,電漿或處理氣體暴露表面於該調節方法期間的溫度為約20℃至350℃。在一實施例中,真空室內的壓力於該調節方法期間為約1至4托爾(Torr)。
在一實施例中,二醯基氯化物(diacyl chloride)之第一反應物可為乙二醯基二氯化物(ethanedioyl dichloride)、丙二醯基二氯化物(malonyl dichloride)、丁二醯基二氯化物(succinyl dichloride)、戊二醯基二氯化物(pentanedioyl dichloride)、或其組合。在一實施例中,二元胺(diamine)之第二反應物可為1,2-乙二胺(1,2-ethanediamine)、1,3-丙二胺(1,3-propanediamine)、1,4-丁二胺(1,4-butanediamine)、或其組合。在一實施例中,二元醇(diol)之第二反應物可為乙二醇(ethylene glycol)、1,3-丙二醇(1,3-propanediol)、1,4-丁二醇(1,4-butanediol)、或其組合。在一實施例中,硫醇(thiol)之第二反應物可為1,2-乙二硫醇(1,2-ethanedithiol)、1,3-丙硫醇(1,3-propanedithiol)、1,4-丁二硫醇(1,4-butanedithiol)、或其組合。在一實施例中,三官能化合物(trifunctional compound)之第二反應物可為(±)-3-氨基-1,2-丙二醇((±)-3-amino-1,2-propanediol)、丙三醇(glycerol)、二(六亞甲基)三胺(bis(hexamethylene)triamine)、三聚氫胺(melamine),二伸乙三胺
(diethylenetriamine)、(±)-1,2,4-丁三元醇((±)-1,2,4-butanetriol)、三聚氯化氰(cyanuric chloride)、或其組合。在一實施例中,沖洗氣體可為He、Ar、Ne、H2、N2、或其組合。較佳地,構成有機聚合膜之分子的終端由氫氧基(hydroxyl)、胺基(amine)、或氫硫基(thiol)形成。舉例而言,若使用二元胺(diamine)作為第二反應物,則NH2較佳地形成構成有機聚合膜之分子的終端;若使用二元醇(diol)作為第二反應物,則OH較佳地形成構成有機聚合膜之分子的終端;以及若使用硫醇(thiol)作為第二反應物,則SH較佳地形成構成有機聚合膜之分子的終端。
圖3顯示在真空室之電漿或處理氣體暴露表面300上形成一層有機聚合膜的步驟(a)至(d)之處理示意圖。在步驟(a)中,使丙二醯基二氯化物(malonyl dichloride)之第一反應物以氣相流動至真空室內,在該真空室內第一反應物吸附至電漿或處理氣體暴露表面300上。在步驟(b)中,在第一反應物之流動停止後使沖洗氣體流動至真空室內,由此從真空室沖洗多餘的第一反應物。在步驟(c)中,使1,2-乙二胺(1,2-ethanediamine)之第二反應物以氣相流動至真空室內,在該真空室內第一和第二反應物發生反應,使得在真空室之電漿或處理氣體暴露表面300上形成一層有機聚合膜。在步驟(d)中,在第二反應物之流動停止後使沖洗氣體流動至真空室內,由此從真空室沖洗多餘的第二反應物和反應副產物。可重複步驟(a)-(d)直至有機聚合膜生長至期望厚度。在形成有機聚合膜的一實施例中,基板可被支撐於真空室內基座模組上,如此以避免聚合有機膜形成於基座模組的上表面上。
在一實施例中,用以形成有機聚合膜之第一反應物和第二反應物係流動至真空室內,直至它們在真空室之電漿或處理氣體暴露表面上達到100%
飽和,使得沉積在真空室之電漿或處理氣體暴露表面上的一層有機聚合膜具有最大厚度。如此可降低沉積有機聚合膜所需的時間。
例如,圖4顯示丙二醯基二氯化物(malonyl dichloride)之第一反應物的飽和百分比之圖表,該丙二醯基二氯化物(malonyl dichloride)之第一反應物係沉積至具有約2托爾(Torr)之連續壓力的真空室內試樣的表面之上。第一反應物係以每劑量持續約1秒的方式流動,其中沖洗氣體在第一反應物之每劑量之間流動約5秒。如圖4中所示,丙二醯基二氯化物(malonyl dichloride)之第一反應物在約8劑量時達到100%飽和。圖5顯示1,2-乙二胺(1,2-ethanediamine)之第二反應物的飽和百分比之圖表,該1,2-乙二胺(1,2-ethanediamine)之第二反應物沉積至具有約2托爾(Torr)之連續壓力的真空室內試樣的表面之上。第二反應物係以每劑量持續約1秒的方式流動,其中沖洗氣體在第二反應物之每劑量之間流動約5秒。如圖5中所示,1,2-乙二胺(1,2-ethanediamine)之第二反應物在約3秒時達到100%飽和。
圖6為每約100個沉積循環之時間(複數秒)的質量變化(ng/cm2)的圖表,其中每一個循環包含丙二醯基二氯化物(malonyl dichloride)之第一反應物流動約1秒、約5秒之沖洗流、1,2-乙二胺(1,2-ethanediamine)之第二反應物流動約1秒、以及約5秒沖洗之最終沖洗流,其中複數沉積循環在具有約2托爾(Torr)之連續壓力的真空室內試樣的表面上形成有機聚合膜。圖7為圖6之圖表的分解圖,圖7顯示每約4個沉積循環之時間(複數秒)的質量變化(ng/cm2)的圖表,其中該4個沉積循環為圖6之100個沉積循環的4個沉積循環。圖8顯示根據圖6和圖7中所顯示之流動週期所沉積膜的有機聚合膜組成。如圖8中所示,有機聚合膜包含碳、氫、氮、和氧,並且與聚醯胺材料的組成一致。
在一實施例中,該方法包含在半導體基板處理設備之真空室內依序地處理(例如,電漿蝕刻或沉積製程)半導體基板,其中真空室之電漿或處理氣體暴露表面上包含有機聚合膜。該方法也包含於處理許多半導體基板(例如,一卡匣半導體基板)之後執行真空室清潔,其中聚合膜在腔室清潔期間自真空室之電漿或處理氣體暴露表面蝕刻。氧電漿可使用於腔室清潔期間,其中氧電漿可從半導體基板處理設備之真空室內的半導體基板之處理中移除有機聚合膜和任何殘留沉積物。有機聚合膜被移除之後,真空室之電漿或處理氣體暴露表面根據此處所揭露方法的實施例可藉由在電漿或處理氣體暴露表面上形成新的有機聚合膜而重新調節。
重新參考圖1和圖2,控制器228較佳地控制從質流控制器302傳遞的第一反應物、第二反應物和沖洗氣體的流動。一非暫態電腦機器可讀媒體較佳地包含用以控制第一反應物、第二反應物、和沖洗氣體之流動的程式指令。較佳地,控制器228也控制真空室201內之壓力,其中非暫態電腦機器可讀媒體包含用以控制真空室201內壓力的程式指令。
雖然已為了清楚理解的目的而詳細地描述上述實施例,但顯而易見的是某些變更及修正可在所附請求項的範圍中實行。因此,本實施例應視為舉例性而非限制性,且此處所揭露之實施例不限制於此處所給定的細節,但可在所附請求項的範圍及均等物中進行修改。
Claims (20)
- 一種半導體基板處理設備之真空室的調節方法,在該半導體基板處理設備中,藉由在該真空室之電漿或處理氣體暴露表面上形成一有機聚合膜而處理半導體基板,該方法包含: (a) 使一第一反應物以二醯基氯化物(diacyl chloride)之氣相流動至該真空室內,並且允許該第一反應物吸附至該真空室之電漿或處理氣體暴露表面上; (b) 該第一反應物之流動停止後,利用一沖洗氣體沖洗該真空室,以從該真空室沖洗多餘的第一反應物; (c) 使一第二反應物以氣相流動至該真空室內,該第一和第二反應物在該真空室內發生反應,使得在該真空室之該電漿或處理氣體暴露表面上形成一有機聚合膜的一層,該第二反應物係選自由二元胺(diamine)、二元醇(diol)、硫醇(thiol)、及三官能化合物(trifunctional compound)組成的群組;以及 (d) 該第二反應物之流動停止後,利用該沖洗氣體沖洗該真空室,以從該真空室沖洗多餘的第二反應物和反應副產物。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中該二醯基氯化物之第一反應物係選自由乙二醯基二氯化物(ethanedioyl dichloride)、丙二醯基二氯化物(malonyl dichloride)、丁二醯基二氯化物(succinyl dichloride)、戊二醯基二氯化物(pentanedioyl dichloride)、及其組合組成的群組。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中: (a) 二元胺(diamine)之該第二反應物係選自由1,2-乙二胺(1,2-ethanediamine)、1,3-丙二胺(1,3-propanediamine)、1,4-丁二胺( 1,4-butanediamine)、 及其組合組成的群組; (b) 二元醇(diol) 之該第二反應物係選自由乙二醇(ethylene glycol)、1,3-丙二醇(1,3-propanediol)、1,4-丁二醇(1,4-butanediol)、及其組合組成的群組;或者 (c) 硫醇(thiol)之該第二反應物係選自由1,2-乙二硫醇(1,2-ethanedithiol)、1,3-丙硫醇(1,3-propanedithiol)、1,4-丁二硫醇(1,4-butanedithiol)、及其組合組成的群組。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中該有機聚合膜不含鹵素且/或不含矽。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中: (a) 該有機聚合膜僅包含碳、氧、氫、和可選的氮和/或硫;以及/或者 (b) 構成該有機聚合膜之該分子的終端由一氫氧基(hydroxyl)、一胺基(amine)、或一氫硫基(thiol)形成。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中三官能化合物(trifunctional compound)之該第二反應物係選自由(±)-3-氨基-1,2-丙二醇((±)-3-amino-1,2-propanediol)、丙三醇(glycerol)、 二(六亞甲基)三胺(bis(hexamethylene)triamine)、三聚氫胺(melamine)、二伸乙三胺(diethylenetriamine)、(±)-1,2,4- 丁三元醇((±)-1,2,4-butanetriol)、三聚氯化氰(cyanuric chloride)、及其組合組成的群組。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中該沖洗氣體係選自由He、Ar、Ne、H2、N2、及其組合組成的群組。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,進一步包含: (a) 重複(a)-(d)至少兩次,使得該有機聚合膜形成至一期望厚度;以及/或者 (b) 重複(a)-(d)少於約一小時,其中流動該第一反應物至該真空室內約0.1至10秒、流動該第二反應物至該真空室內約0.1至10秒、以及執行該第一或第二反應物之該沖洗約1至10秒。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中(c)中所形成之該層的厚度為約0.1至1nm。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中該真空室之該電漿或處理氣體暴露表面的溫度係約20℃至350℃,並且/或者該真空室內的壓力係約1至4托爾(Torr)。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,進一步包含: 在該半導體基板處理設備之該真空室內依序地處理半導體基板; 於處理一卡匣之半導體基板之後執行一真空室清潔,其中聚合膜係從該真空室之該電漿或處理氣體暴露表面蝕去;以及 根據申請專利範圍第1項之方法,藉由在該電漿或處理氣體暴露表面上形成一聚合膜,而重新調節該真空室之該電漿或處理氣體暴露表面。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,更包含在形成該有機聚合膜時,將一基板支撐在該真空室內的一基座模組上。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,更包含在步驟(d)之後,在該真空室內之一半導體基板上執行一電漿蝕刻或沉積製程。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,其中流動該第一反應物至該真空室內約0.1至10秒、流動該第二反應物至該真空室內約0.1至10秒、以及/或者執行該第一或第二反應物之該沖洗約1至10秒。
- 如申請專利範圍第1項之半導體基板處理設備之真空室的調節方法,更包含: 利用一控制器控制該第一反應物、該第二反應物、以及該沖洗氣體之流動,該控制器中之一非暫態電腦機器可讀媒體包含用以控制該第一反應物、該第二反應物、以及該沖洗氣體之流動的程式指令;以及/或者 利用一控制器控制該真空室內的壓力,該控制器中之一非暫態電腦機器可讀媒體包含用以控制該真空室內該壓力的程式指令。
- 一種半導體基板處理設備之真空室,包含藉由申請專利範圍第1項之方法而形成於該真空室之電漿或處理氣體暴露表面上的一有機聚合膜。
- 一種半導體基板處理設備,包含: 一真空室,該真空室包含於其內處理一半導體基板的一處理區域; 一質流控制器,該質流控制器供應處理氣體至該真空室;及 一控制器,該控制器操作該質流控制器, 該質流控制器用以供應於該真空室之電漿或處理氣體暴露表面上形成一有機聚合膜的第一反應物氣體、第二反應物氣體、和沖洗氣體、以及於該半導體基板上沉積一膜的處理氣體,該控制器用以根據申請專利範圍第1項之方法操作該質流控制器,以進行真空室之該電漿或處理氣體暴露表面上該有機聚合膜的形成,該控制器進一步用以操作該質流控制器,以進行該真空室內一半導體基板上一膜的沉積。
- 如申請專利範圍第17項之半導體基板處理設備,其中該半導體基板處理設備更包含: 一真空源,與該真空室流體連通,該真空源自該真空室抽空第一反應物氣體、第二反應物氣體、沖洗氣體、和處理氣體; 一噴淋頭模組,該噴淋頭模組將處理氣體自處理氣體源傳送至該真空室; 一基板基座模組,該基板基座模組用以在該真空室之該處理區域內加熱和支撐一半導體基板; 一非暫態電腦機器可讀媒體,該非暫態電腦機器可讀媒體包含用以控制該半導體基板處理設備的複數程式指令;以及/或者 一RF能量源,該RF能量源用以在該真空室之該處理區域內將該處理氣體激發為一電漿態。
- 如申請專利範圍第18項之半導體基板處理設備,其中該真空室之一電漿或處理氣體暴露表面係由鋁、矽、氧化鋁、藍寶石、氧化矽、石英、氮化矽、或碳化矽形成。
- 如申請專利範圍第18項之半導體基板處理設備,其中該半導體基板處理設備係一化學氣相沉積設備、電漿加強化學氣相沉積設備、原子層沉積設備、電漿加強原子層沉積設備、脈衝沉積層設備、電漿加強脈衝沉積層設備、一保形膜沉積設備、一分子層沉積設備、或一電漿加強分子層沉積設備。
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US20160035542A1 (en) | 2016-02-04 |
US9548188B2 (en) | 2017-01-17 |
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CN105321793B (zh) | 2018-12-21 |
TW201611162A (zh) | 2016-03-16 |
KR102613123B1 (ko) | 2023-12-12 |
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CN105321793A (zh) | 2016-02-10 |
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