TWI652806B - 嵌設有指紋感測器的平板顯示器及其形成方法 - Google Patents
嵌設有指紋感測器的平板顯示器及其形成方法 Download PDFInfo
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- TWI652806B TWI652806B TW106142636A TW106142636A TWI652806B TW I652806 B TWI652806 B TW I652806B TW 106142636 A TW106142636 A TW 106142636A TW 106142636 A TW106142636 A TW 106142636A TW I652806 B TWI652806 B TW I652806B
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- 238000000034 method Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 29
- 125000006850 spacer group Chemical group 0.000 claims description 22
- 239000002019 doping agent Substances 0.000 claims description 12
- 239000010953 base metal Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 41
- 239000010409 thin film Substances 0.000 description 35
- 238000010586 diagram Methods 0.000 description 17
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 10
- 238000005253 cladding Methods 0.000 description 9
- 239000012780 transparent material Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000006059 cover glass Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003997 social interaction Effects 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133526—Lenses, e.g. microlenses or Fresnel lenses
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13398—Spacer materials; Spacer properties
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
一種嵌設有指紋感測器的平板顯示器,包含基板;第一介電層,形成於基板的表面;光感測器,形成於第一介電層內;及透鏡區,設於光感測器上且於垂直方向對準於光感測器。
Description
本發明係有關一種指紋感測器,特別是關於一種嵌設有指紋感測器的平板顯示器。
行動裝置(例如智慧型手機)為一種電腦裝置,其體積很小而能夠以手握持與操作。行動裝置通常具有觸控螢幕,其佔用行動裝置的前表面的相當大比例(例如70%)。
當代行動裝置可執行很多的功能,並適用於各種的用途,例如交際互動、金融交易、個人或商業通信。鑑於此,通常會使用生物測定(例如指紋)技術來識別使用者及其身分,用以保護儲存於行動裝置內的機密資料。指紋辨識不但是一種識別使用者的保全方法,且是存取行動裝置的一種快速方法。
許多行動裝置(例如智慧型手機)裝設有指紋辨識,其通常包含實體按鈕,設於前表面的觸控螢幕的外部。行動裝置的觸控螢幕有逐漸增大的趨勢,用以因應行動裝置更多更強的功能。然而,將指紋辨識按鈕設於行動裝置的前表面會阻礙使用大觸控螢幕的趨勢。
由於傳統行動裝置的擴展性受到指紋辨識按鈕的阻礙,因此亟需提出一種新穎的機制,有效提供行動裝置的指紋辨識。
鑑於上述,本發明實施例的目的之一在於提出一種嵌設有指紋感測器的平板顯示器,例如液晶顯示器或有機發光二極體顯示器。
根據本發明實施例,平板顯示器包含基板、第一介電層、光感測器及透鏡區。第一介電層形成於基板的表面。光感測器形成於第一介電層內。透鏡區設於光感測器上且於垂直方向對準於光感測器。
100‧‧‧液晶顯示器
300‧‧‧液晶顯示器
400‧‧‧發光二極體顯示器
500‧‧‧發光二極體顯示器
600‧‧‧發光二極體顯示器
11‧‧‧薄膜電晶體基板
12‧‧‧第一介電層
12-1‧‧‧第一層
12-2‧‧‧第二層
12-3‧‧‧第三層
12-4‧‧‧第四層
12-5‧‧‧第五層
13‧‧‧切換薄膜電晶體
130‧‧‧基部金屬層
131‧‧‧多晶矽層
132‧‧‧第一金屬層
133‧‧‧第二金屬層
134‧‧‧第三金屬層
14‧‧‧光感測器
14B‧‧‧選擇薄膜電晶體
15‧‧‧平坦化層
15-1‧‧‧第一層
15-2‧‧‧第二層
16‧‧‧第二介電層
16-1‧‧‧第一層
16-2‧‧‧第二層
16-3‧‧‧第三層
160‧‧‧像素定義層
161‧‧‧第一氧化銦錫層
161B‧‧‧陽極層
162‧‧‧第二氧化銦錫層
162B‧‧‧陰極層
17‧‧‧液晶層
171‧‧‧光間隔物
18‧‧‧彩色濾光層
19‧‧‧彩色濾光基板
20‧‧‧透鏡區
21‧‧‧光源
22‧‧‧手指
23‧‧‧棒狀透鏡
24‧‧‧光偵測器
61‧‧‧包覆層
62‧‧‧覆蓋玻璃
M0‧‧‧基部金屬層
M1‧‧‧第一金屬層
M2‧‧‧第二金屬層
M3‧‧‧第三金屬層
TFT‧‧‧薄膜電晶體
PLN‧‧‧平坦化
ITO‧‧‧氧化銦錫
LC‧‧‧液晶
CF‧‧‧彩色濾光
PDL‧‧‧像素定義層
第一圖的剖視圖顯示本發明第一實施例的嵌設有指紋感測器的液晶顯示器。
第二圖顯示本實施例的指紋感測器的示意圖。
第三A圖至第三I圖顯示第一圖的液晶顯示器的形成方法的剖視圖。
第四圖的剖視圖顯示本發明第二實施例的嵌設有指紋感測器的液晶顯示器。
第五A圖至第五B圖顯示第四圖的液晶顯示器的形成方法的剖視圖。
第六圖的剖視圖顯示本發明第三實施例的嵌設有指紋感測器的發光二極體顯示器。
第七A圖至第七I圖顯示第六圖的發光二極體顯示器的形成方法的剖視圖。
第八圖的剖視圖顯示本發明第四實施例的嵌設有指紋感測器的發光二極體顯示器。
第九A圖至第九B圖顯示第八圖的發光二極體顯示器的形成方法的剖視圖。
第十圖的剖視圖顯示本發明第五實施例的嵌設有指紋感測器的發光二極體顯示器。
第十一A圖至第十一B圖顯示第十圖的發光二極體顯示器的形成方法的剖視圖。
第一圖的剖視圖顯示本發明第一實施例的嵌設有指紋感測器的液晶顯示器(LCD)100,其中指紋感測器整合於液晶顯示器100的主動區。液晶顯
示器100可為薄膜電晶體(TFT)液晶顯示器。在一實施例中,薄膜電晶體(TFT)液晶顯示器是以低溫多晶矽(LTPS)技術形成的,執行於相當低的溫度(大約攝氏650度或更低),相對於傳統方法執行於攝氏900度以上。低溫多晶矽(LTPS)可用以製造大尺寸液晶顯示器。為了便於了解本發明,僅顯示與實施例相關的元件。
在本實施例中,液晶顯示器100可包含薄膜電晶體(TFT)基板11,其表面形成有第一介電層12。第一介電層12可包含氧化矽或/且氮化矽。用以顯示的多個切換薄膜電晶體13形成於第一介電層12內。切換薄膜電晶體13可包含多晶矽層(作為通道)131、第一金屬層M1(作為閘極)132設於多晶矽層131上、第二金屬層M2(作為源極與汲極)133設於多晶矽層131的表面且圍繞第一金屬層132,其中第一介電層12隔離第一金屬層132與第二金屬層133。
根據本實施例的特徵之一,至少一光感測器(或光偵測器)14形成於第一介電層12內。本實施例的光感測器14可包含多晶矽層131與其表面的第二金屬層133。第二金屬層133圍繞一通道,用以通過代表指紋的光束,再由光感測器14偵測。多晶矽層131的一端摻雜P型摻雜物,另一端摻雜N型摻雜物,因而形成p-n介面作為光感測器。此外,基部金屬層(M0)130設於第一介電層12內且位於薄膜電晶體基板11的表面,作為第一光屏障,用以阻擋或屏障背光。
在本實施例中,形成至少一選擇薄膜電晶體14B,以配合光感測器14。選擇薄膜電晶體14B可包含多晶矽層(作為通道)131、第一金屬層M1(作為閘極)132設於多晶矽層131上、第二金屬層M2(作為源極與汲極)133設於多晶矽層131的表面且圍繞第一金屬層132,其中第一介電層12隔離第一金屬層132與第二金屬層133。選擇薄膜電晶體14B藉由第二金屬層133而連接至相應光感測器14。
本實施例的液晶顯示器100可包含光源,例如背光模組(未顯示於圖式),設於薄膜電晶體(TFT)基板11下。液晶顯示器100的光源可發射可見光或非可見光束。
本實施例的液晶顯示器100可包含透明的平坦化(PLN)層15,其具有大致平坦的頂面,且形成於第一介電層12上。平坦化層15可包含透明材質,例
如樹脂,用以讓光線通過。形成第三金屬層(M3)134於平坦化層15的底部。第三金屬層134可作為第二光屏障,用以阻隔或屏障通道方向以外的(傾斜)光線,使其不會進入光感測器14。
本實施例的液晶顯示器100可包含第二介電層16,形成於平坦化層15的表面。第二介電層16可包含氧化矽或/且氮化矽。至少一導電層形成於第二介電層16內。如第一圖所例示,所述至少一導電層可包含第一氧化銦錫(ITO)層161,形成於第二介電層16的底部(例如形成於平坦化層15的表面);及第二氧化銦錫(ITO)層162,形成於第二介電層16的頂部(例如形成於第一氧化銦錫層161上)。第二介電層16隔離第一氧化銦錫層161與第二氧化銦錫層162。如第一圖所示,第一氧化銦錫層161可連接至切換薄膜電晶體13的第二金屬層133。
本實施例的液晶顯示器100可包含液晶(LC)層17,形成於第二介電層16上。至少一透明的光間隔物(photo spacer)171設於液晶層17內,用以隔離相鄰液晶區。液晶顯示器100的光間隔物171可包含透明材質,例如樹脂。液晶顯示器100還可包含彩色濾光(CF)層18,形成於液晶層17上,且設於彩色濾光(CF)基板19的底面。彩色濾光層18可包含多個彩色濾光片,例如紅色、綠色及藍色濾光片,用以分別讓紅光、綠光及藍光通過。彩色濾光層18還可包含至少一黑色濾光片,用以阻隔光線。未被黑色濾光片覆蓋的區域為顯示區。如第一圖所示,黑色濾光片大致對準於下方的光間隔物171。在本實施例中,光感測器14位於未被彩色濾光層18的黑色濾光片覆蓋的主動顯示區。
根據本實施例的又一特徵,液晶顯示器100可包含至少一透鏡區20,設於光感測器14上並於垂直方向大致對準於光感測器14。在本實施例中,透鏡區20連接至平坦化層15的頂面,並向上延伸。透鏡區20可包含透明材質,其可相同或異於平坦化層15。透鏡區20垂直伸長,並(由下而上依序)通過第二介電層16、液晶層17與彩色濾光層18。
根據上述實施例,嵌設有指紋感測器的液晶顯示器100包含光源、透鏡區20與光感測器14。第二圖顯示本實施例的指紋感測器的示意圖。光源21
發射光束至手指22。透鏡區20作為棒狀透鏡(rod lens)23,用以聚焦反射自指紋的光束。光感測器14作為光偵測器24,用以偵測代表指紋的光束,並將其轉換為電子信號。
第三A圖至第三I圖顯示第一圖的液晶顯示器100的形成方法的剖視圖。液晶顯示器100的形成順序可異於第三A圖至第三I圖所示。於第三A圖,形成第一介電層12的第一層12-1於薄膜電晶體基板11的頂面,接著形成基部金屬層(M0)130於薄膜電晶體基板11的表面。於第三B圖,形成第一介電層12的第二層12-2於第一層12-1的表面,接著形成多晶矽層131於第一介電層12的第二層12-1內。光感測器的多晶矽層131的一端摻雜P型摻雜物,另一端摻雜N型摻雜物,因而形成p-n介面作為光感測器。於第三C圖,形成第一介電層12的第三層12-3於第二層12-2的表面,接著形成第一金屬層(M1)132於第一介電層12的第三層12-3內。於第三D圖,形成第一介電層12的第四層12-4於第三層12-3的表面,接著形成第二金屬層(M2)133於第一介電層12的第四層12-4與第三層12-3內。藉此,因而形成切換薄膜電晶體13、光感測器14與選擇薄膜電晶體14B於第一介電層12內。於第三E圖,形成第一介電層12的第五層12-5於第四層12-4的表面。形成平坦化層15的第一層15-1於第一介電層12的表面,接著形成第三金屬層(M3)134於平坦化層15的第一層15-1內。於第三F圖,形成平坦化層15的第二層15-2於第一層15-1的表面,接著形成第二介電層16的第一層16-1與第二層16-2。形成第一氧化銦錫層161於第二介電層16的第二層16-2內,並連接至切換薄膜電晶體13。於第三G圖,形成第二介電層16的第三層16-3於第二層16-2的表面,接著形成第二氧化銦錫層162於第二介電層16的第三層16-3的表面。接著,形成液晶層17於第二介電層16上,且形成至少一透明的光間隔物171於液晶層17內,用以隔離相鄰液晶區。於第三H圖,形成至少一透鏡區20於彩色濾光層18、液晶層17及第二介電層16內。透鏡區20連接至平坦化層15的頂面,並於垂直方向對準光感測器14。最後,於第三I圖,形成彩色濾光基板19以覆蓋彩色濾光層18。
第四圖的剖視圖顯示本發明第二實施例的嵌設有指紋感測器的液晶顯示器(LCD)300,其中指紋感測器整合於液晶顯示器300的主動區。本實施例類似於第一實施例(第一圖),兩者之間的差異將說明如下。
在本實施例中,透鏡區20設於液晶層17內,且大致平行於光間隔物171。透鏡區20可包含透明材質,其可相同或異於光間隔物171。透鏡區20垂直伸長,並(由下而上依序)通過液晶層17與彩色濾光層18。
第五A圖至第五B圖顯示第四圖的液晶顯示器300的形成方法的剖視圖。液晶顯示器300的形成順序可異於第五A圖至第五B圖所示。本實施例的方法可包含第三A圖至第三G圖所示步驟。接下來,於第五A圖,形成彩色濾光層18於液晶層17上。接著,形成至少一透鏡區20於彩色濾光層18與液晶層17內。透鏡區20連接至第二介電層16的頂面,並於垂直方向大致對準於光感測器14。最後,於第五B圖,形成彩色濾光基板19以覆蓋彩色濾光層18。
第六圖的剖視圖顯示本發明第三實施例的嵌設有指紋感測器的發光二極體(LED)顯示器400,其中指紋感測器整合於發光二極體顯示器400的主動區。發光二極體顯示器400可為主動式有機發光二極體(AMOLED)顯示器。在一實施例中,有機發光二極體(AMOLED)顯示器是以低溫多晶矽(LTPS)技術形成的,執行於相當低的溫度(大約攝氏650度或更低),相對於傳統方法執行於攝氏900度以上。低溫多晶矽(LTPS)可用以製造大尺寸發光二極體顯示器。為了便於了解本發明,僅顯示與實施例相關的元件。
在本實施例中,發光二極體顯示器400可包含薄膜電晶體(TFT)基板11,其頂面形成有第一介電層12。第一介電層12可包含氧化矽或/且氮化矽。用以顯示的多個切換薄膜電晶體13形成於第一介電層12內。切換薄膜電晶體13可包含多晶矽層(作為通道)131、第一金屬層M1(作為閘極)132設於多晶矽層131上、第二金屬層M2(作為源極與汲極)133設於多晶矽層131的表面且圍繞第一金屬層132,其中第一介電層12隔離第一金屬層132與第二金屬層133。
根據本實施例的特徵之一,至少一光感測器(或光偵測器)14形成於第一介電層12內且形成於薄膜電晶體基板11上。本實施例的光感測器14可包含多晶矽層131與其表面的第二金屬層133。第二金屬層133圍繞一通道,用以通過代表指紋的光束,再由光感測器14偵測。多晶矽層131的一端摻雜P型摻雜物,另一端摻雜N型摻雜物,因而形成p-n介面作為光感測器。
在本實施例中,形成至少一選擇薄膜電晶體14B於第一介電層12內且形成於薄膜電晶體基板11的表面,以配合光感測器14。選擇薄膜電晶體14B可包含基部金屬層(M0)130設於薄膜電晶體基板11的表面、多晶矽層(作為通道)131設於基部金屬層(M0)130上且與其隔離、第一金屬層M1(作為閘極)132設於多晶矽層131上、第二金屬層M2(作為源極與汲極)133設於多晶矽層131的表面且圍繞第一金屬層132,其中第一介電層12隔離第一金屬層132與第二金屬層133。選擇薄膜電晶體14B藉由第二金屬層133而連接至相應光感測器14。
本實施例的發光二極體顯示器400可包含透明的平坦化(PLN)層15,其具有大致平坦的頂面,且形成於第一介電層12上。平坦化層15可包含透明材質,例如樹脂,用以讓光線通過。形成第三金屬層(M3)134於平坦化層15的底部。第三金屬層134可作為第二光屏障,用以阻隔或屏障通道方向以外的(傾斜)光線,使其不會進入光感測器14。
本實施例的發光二極體顯示器400可包含第二介電層16,形成於平坦化層15的表面。第二介電層16可包含氧化矽或/且氮化矽。第二介電層16可包含透明的像素定義層(PDL)160,其可形成於平坦化層15的表面。至少一導電層形成於第二介電層16內。如第六圖所例示,所述至少一導電層可包含陽極層161B,形成於第二介電層16內;及陰極層162B,形成於第二介電層16內且位於陽極層161B上。第二介電層16隔離陽極層161B與陰極層162B。如第六圖所示,陽極層161B可連接至切換薄膜電晶體13的第二金屬層133。發光二極體顯示器400還可包含彩色濾光(CF)層18,形成於第二介電層16內(例如形成於陽極層161B與陰極層162B之間)。彩色濾光層18可包含多個彩色濾光片,例如紅色、綠色及藍色濾光
片,用以分別讓紅光、綠光及藍光通過。在本實施例中,光感測器14位於未被彩色濾光層18的黑色濾光片覆蓋的主動顯示區。
本實施例的發光二極體顯示器400可包含包覆(encapsulation)層61,形成於第二介電層16上。至少一透明的光間隔物(photo spacer)171設於包覆層61內,用以隔離相鄰像素。發光二極體顯示器400的光間隔物171可包含透明材質,例如樹脂。
根據本實施例的又一特徵,發光二極體顯示器400可包含至少一透鏡區20,設於光感測器14上並於垂直方向大致對準於光感測器14。在本實施例中,透鏡區20連接至平坦化層15的頂面,並向上延伸。透鏡區20可包含透明材質,其可相同或異於平坦化層15。透鏡區20垂直伸長,並(由下而上依序)通過第二介電層16與包覆層61。發光二極體顯示器400還可包含覆蓋玻璃62,用以覆蓋包覆層61、光間隔物171與透鏡區20。
第七A圖至第七I圖顯示第六圖的發光二極體顯示器400的形成方法的剖視圖。發光二極體顯示器400的形成順序可異於第七A圖至第七I圖所示。於第七A圖,形成第一介電層12的第一層12-1於薄膜電晶體基板11的頂面,接著形成基部金屬層(M0)130於薄膜電晶體基板11的表面。於第七B圖,形成第一介電層12的第二層12-2於第一層12-1的表面,接著形成多晶矽層131於第一介電層12的第二層12-2內。光感測器的多晶矽層131的一端摻雜P型摻雜物,另一端摻雜N型摻雜物,因而形成p-n介面作為光感測器。於第七C圖,形成第一介電層12的第三層12-3於第二層12-2的表面,接著形成第一金屬層(M1)132於第一介電層12的第三層12-3內。於第七D圖,形成第一介電層12的第四層12-4於第三層12-3的表面,接著形成第二金屬層(M2)133於第一介電層12的第四層12-4與第三層12-3內。藉此,因而形成切換薄膜電晶體13、光感測器14與選擇薄膜電晶體14B於第一介電層12內。於第七E圖,形成第一介電層12的第五層12-5於第四層12-4的表面。形成平坦化層15的第一層15-1於第一介電層12的表面,接著形成第三金屬層(M3)134於平坦化層15的第一層15-1內。於第七F圖,形成平坦化層15的第二層15-2於第一
層15-1的表面,接著形成第二介電層16的第一層16-1與第二層16-2。形成陽極層161B於第二介電層16的第二層16-2內,並連接至切換薄膜電晶體13。於第七G圖,形成第二介電層16的第三層16-3於第二層16-2的表面,接著形成彩色濾光層18於第二介電層16的第三層16-3內。接著,形成陰極層162B於彩色濾光層18的表面。形成包覆層61於第二介電層16上,且形成至少一透明的光間隔物171於包覆層61內,用以隔離相鄰像素。於第七H圖,形成至少一透鏡區20於包覆層61與第二介電層16內。透鏡區20連接至平坦化層15的頂面,並於垂直方向對準光感測器14。最後,於第七I圖,形成覆蓋玻璃62以覆蓋包覆層61、光間隔物171與透鏡區20。
第八圖的剖視圖顯示本發明第四實施例的嵌設有指紋感測器的發光二極體顯示器500,其中指紋感測器整合於發光二極體顯示器500的主動區。本實施例類似於第三實施例(第六圖),兩者之間的差異將說明如下。
在本實施例中,透鏡區20設於第二介電層16上(例如形成於陰極層162B的表面),且大致平行於光間隔物171。透鏡區20可包含透明材質,其可相同或異於光間隔物171。
第九A圖至第九B圖顯示第八圖的發光二極體顯示器500的形成方法的剖視圖。發光二極體顯示器500的形成順序可異於第九A圖至第九B圖所示。本實施例的方法可包含第七A圖至第七G圖所示步驟。接下來,於第九A圖,形成至少一透鏡區20於包覆層61內。透鏡區20連接至第二介電層16的頂面,並於垂直方向大致對準於光感測器14。最後,於第九B圖,形成覆蓋玻璃62以覆蓋包覆層61、光間隔物171與透鏡區20。
第十圖的剖視圖顯示本發明第五實施例的嵌設有指紋感測器的發光二極體顯示器600,其中指紋感測器整合於發光二極體顯示器600的主動區。本實施例類似於第三實施例(第六圖),兩者之間的差異將說明如下。
在本實施例中,透鏡區20連接至像素定義層160的頂面,並向上延伸。透鏡區20可包含透明材質,其可相同或異於像素定義層160。透鏡區20垂直伸長,並(由下而上依序)通過第二介電層16與包覆層61。
第十一A圖至第十一B圖顯示第十圖的發光二極體顯示器600的形成方法的剖視圖。發光二極體顯示器600的形成順序可異於第十一A圖至第十一B圖所示。本實施例的方法可包含第七A圖至第七G圖所示步驟。接下來,於第十一A圖,形成至少一透鏡區20於包覆層61與第二介電層16內。透鏡區20連接至像素定義層160的頂面,並於垂直方向大致對準於光感測器14。最後,於第十一B圖,形成覆蓋玻璃62以覆蓋包覆層61、光間隔物171與透鏡區20。
以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。
Claims (16)
- 一種嵌設有指紋感測器的平板顯示器,包含:一基板;一第一介電層,形成於該基板的表面;一光感測器,形成於該第一介電層內;一透鏡區,設於該光感測器上且於垂直方向對準於該光感測器;及一透明的平坦化層,其具有平坦頂面且形成於該第一介電層上;其中該透鏡區連接至該平坦化層的頂面且向上延伸。
- 根據申請專利範圍第1項所述嵌設有指紋感測器的平板顯示器,其中該光感測器包含一多晶矽層,其一端摻雜P型摻雜物,另一端摻雜N型摻雜物,因而形成p-n介面。
- 根據申請專利範圍第2項所述嵌設有指紋感測器的平板顯示器,其中該光感測器更包含:一金屬層,設於該多晶矽層的表面且圍繞一通道;其中代表指紋的光束通過該透鏡區與該通道,再由該光感測器偵測。
- 根據申請專利範圍第1項所述嵌設有指紋感測器的平板顯示器,更包含一基部金屬層,形成於該第一介電層內且設於該光感測器下,用以作為光屏障以阻擋背光。
- 根據申請專利範圍第1項所述嵌設有指紋感測器的平板顯示器,更包含一金屬層,設於該光感測器上,用以作為光屏障以阻擋傾斜光。
- 一種嵌設有指紋感測器的平板顯示器,包含:一基板;一第一介電層,形成於該基板的表面;一光感測器,形成於該第一介電層內;一透鏡區,設於該光感測器上且於垂直方向對準於該光感測器;一透明的平坦化層,其具有平坦頂面且形成於該第一介電層上;一第二介電層,形成於該平坦化層的表面;及一光間隔物,設於該第二介電層上;其中該透鏡區設於第二介電層的表面,且平行於該光間隔物。
- 一種嵌設有指紋感測器的平板顯示器,包含:一基板;一第一介電層,形成於該基板的表面;一光感測器,形成於該第一介電層內;一透鏡區,設於該光感測器上且於垂直方向對準於該光感測器;一透明的平坦化層,其具有平坦頂面且形成於該第一介電層上;一第二介電層,形成於該平坦化層的表面;及一光間隔物,設於該第二介電層上;其中該第二介電層包含一透明的像素定義層;其中該透鏡區連接至該像素定義層的頂面且向上延伸。
- 根據申請專利範圍第7項所述嵌設有指紋感測器的平板顯示器,更包含一彩色濾光層,其中該光感測器位於未被該彩色濾光層的黑色濾光片覆蓋的主動顯示區。
- 一種嵌設有指紋感測器的平板顯示器的形成方法,包含以下步驟但不限定於所述順序:提供一基板;形成一第一介電層於該基板的表面;形成一光感測器於該第一介電層內;形成一透鏡區於該光感測器上且於垂直方向對準於該光感測器;及形成一透明的平坦化層,其具有平坦頂面且形成於該第一介電層上;其中該透鏡區連接至該平坦化層的頂面且向上延伸。
- 根據申請專利範圍第9項所述嵌設有指紋感測器的平板顯示器的形成方法,其中該光感測器包含一多晶矽層,其一端摻雜P型摻雜物,另一端摻雜N型摻雜物,因而形成p-n介面。
- 根據申請專利範圍第10項所述嵌設有指紋感測器的平板顯示器的形成方法,其中該光感測器更包含:一金屬層,設於該多晶矽層的表面且圍繞一通道;其中代表指紋的光束通過該透鏡區與該通道,再由該光感測器偵測。
- 根據申請專利範圍第9項所述嵌設有指紋感測器的平板顯示器的形成方法,更包含一步驟以形成一基部金屬層於該第一介電層內且設於該光感測器下,用以作為光屏障以阻擋背光。
- 根據申請專利範圍第9項所述嵌設有指紋感測器的平板顯示器的形成方法,更包含一步驟以形成一金屬層於該光感測器上,用以作為光屏障以阻擋傾斜光。
- 一種嵌設有指紋感測器的平板顯示器的形成方法,包含以下步驟但不限定於所述順序:提供一基板;形成一第一介電層於該基板的表面;形成一光感測器於該第一介電層內;形成一透鏡區於該光感測器上且於垂直方向對準於該光感測器;形成一透明的平坦化層,其具有平坦頂面且形成於該第一介電層上;形成一第二介電層於該平坦化層的表面;及形成一光間隔物於該第二介電層上;其中該透鏡區設於第二介電層的表面,且平行於該光間隔物。
- 一種嵌設有指紋感測器的平板顯示器的形成方法,包含以下步驟但不限定於所述順序:提供一基板;形成一第一介電層於該基板的表面;形成一光感測器於該第一介電層內;形成一透鏡區於該光感測器上且於垂直方向對準於該光感測器;形成一透明的平坦化層,其具有平坦頂面且形成於該第一介電層上;形成一第二介電層於該平坦化層的表面;及形成一光間隔物於該第二介電層上;其中該第二介電層包含一透明的像素定義層;其中該透鏡區連接至該像素定義層的頂面且向上延伸。
- 根據申請專利範圍第15項所述嵌設有指紋感測器的平板顯示器的形成方法,更包含一步驟以形成一彩色濾光層,其中該光感測器位於未被該彩色濾光層的黑色濾光片覆蓋的主動顯示區。
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TWI714295B (zh) * | 2019-10-04 | 2020-12-21 | 奇景光電股份有限公司 | 嵌設於平板顯示器的指紋感測器及其操作方法 |
TWI758641B (zh) * | 2019-07-07 | 2022-03-21 | 開曼群島商奕力科技(開曼)股份有限公司 | 顯示裝置、其操作方法和整合控制晶片 |
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CN105956584A (zh) * | 2016-06-30 | 2016-09-21 | 京东方科技集团股份有限公司 | 指纹识别模组及其制作方法和驱动方法、显示装置 |
US11387305B2 (en) * | 2018-08-10 | 2022-07-12 | Boe Technology Group Co., Ltd. | Display substrate, display panel, display apparatus, and method of fabricating display substrate |
WO2020140279A1 (zh) * | 2019-01-04 | 2020-07-09 | 京东方科技集团股份有限公司 | 显示面板及其操作方法 |
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CN112686078B (zh) * | 2019-10-17 | 2024-06-14 | 奇景光电股份有限公司 | 嵌设于平板显示器的指纹感测器及其操作方法 |
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TWI758641B (zh) * | 2019-07-07 | 2022-03-21 | 開曼群島商奕力科技(開曼)股份有限公司 | 顯示裝置、其操作方法和整合控制晶片 |
TWI714295B (zh) * | 2019-10-04 | 2020-12-21 | 奇景光電股份有限公司 | 嵌設於平板顯示器的指紋感測器及其操作方法 |
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CN109472185A (zh) | 2019-03-15 |
CN109472185B (zh) | 2021-07-16 |
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